CN112670379A - Micro LED structure and color display device - Google Patents
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Abstract
The embodiment of the invention provides a micro LED structure and a color display device, and relates to the technical field of display. The color display device comprises a plurality of the micro LED structures. The micro LED structure comprises a light emitting layer, a reflecting layer and a color selection layer, wherein the light emitting layer at least comprises an electric excitation material and/or an optical excitation material so as to realize multi-wavelength excitation, the reflecting layer is positioned on one side of the light emitting layer, the color selection layer is positioned on the other side of the light emitting layer, and the color selection layer is used for selecting light of one color to penetrate through. The micro LED structure is applied to a color display device, can be prepared by a compatible semiconductor process, does not need expensive quantum dot printing equipment and a complex mass transfer technology, and has high production efficiency and yield.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro LED structure and a color display device.
Background
A micro LED is a light emitting diode that passes through the micrometer scale. An array of pixel units formed of micro LEDs has been receiving attention in recent years as a self-luminous display device having excellent characteristics such as high brightness, long lifetime, high resolution, and fast response speed, compared to an OLED display device.
Colorization is one of the key technologies in display technology. From the analysis of the current state of development of the prior disclosed technology, the colorization technology of the micro LED display device mainly has two schemes, one scheme is that micro LEDs with RGB three primary colors are assembled into a colorized display array, and micro LEDs with different color wave bands emit light with different color wave bands to realize colorized display; the second scheme is to use short wavelength micro LED to excite color converting material, such as quantum dot or nanometer fluorescent powder, to convert the short wavelength micro LED into long wavelength green or red light for color display.
The two technical schemes have the advantages and the disadvantages, and the three-primary-color micro LED assembly scheme needs a huge transfer technology, and has high technical requirements, low efficiency and low yield. In the scheme of light-excited color conversion, on one hand, quantum dots exciting different colors need to be printed or patterned, a special quantum dot printing device is needed, and the problem of low conversion efficiency exists, and on the other hand, the quantum dot material for color conversion is located on one side of the light emitting surface, so that light with short wavelength for excitation is easily leaked when the conversion efficiency is low, and related technologies are not mature.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is as follows: the existing micro LED structure for realizing a colorized display device needs expensive quantum dot printing equipment or a complex mass transfer technology, so that the efficiency is low and the yield is low.
To solve the above technical problems, embodiments of the present invention provide a micro LED structure and a color display device.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a micro LED structure comprising:
a light-emitting layer containing at least an electrically excited material and/or an optically excited material to realize multi-wavelength excitation;
the reflecting layer is positioned on one side of the luminescent layer;
and the color selection layer is positioned on the other side of the light-emitting layer and is used for selecting one color of light to transmit.
In an alternative embodiment, the light emitting layer comprises:
a quantum well layer for electroluminescence;
the P-type semiconductor layer is positioned on one side of the quantum well layer;
and the N-type semiconductor layer is positioned on the other side of the quantum well layer, and is far away from the reflecting layer relative to the P-type semiconductor layer.
In an optional embodiment, a side of the P-type semiconductor layer away from the N-type semiconductor layer is opened with a hole, and the light emitting layer further includes:
a wavelength converting material disposed within the aperture.
In an alternative embodiment, the depth of the hole is less than the thickness of the P-type semiconductor layer, the hole extending into a portion of the material of the P-type semiconductor layer.
In an alternative embodiment, the depth of the hole is greater than the sum of the thicknesses of the P-type semiconductor layer and the quantum well layer and less than the sum of the thicknesses of the P-type semiconductor layer, the quantum well layer and the N-type semiconductor layer, and the hole penetrates through the P-type semiconductor layer and the quantum well layer in sequence and extends into a part of the material of the N-type semiconductor layer.
In an alternative embodiment, the color selection layer is an optical wave filter including a micro-nano structure, and the wavelength conversion material includes quantum dots or nano-scale phosphor.
In a second aspect, the present invention provides a color display device comprising a plurality of micro LED structures of the foregoing embodiments.
In an alternative embodiment, the color display device further comprises:
the driving circuit substrate is connected with the plurality of micro LED structure arrays.
In an alternative embodiment, the light emitting layer comprises:
a quantum well layer for electroluminescence;
the P-type semiconductor layer is positioned on one side of the quantum well layer;
the N-type semiconductor layer is positioned on the other side of the quantum well layer;
the N-type semiconductor layers in the two adjacent micro LED structures are arranged at intervals.
In an alternative embodiment, the light emitting layer comprises:
a quantum well layer for electroluminescence;
the P-type semiconductor layer is positioned on one side of the quantum well layer;
the N-type semiconductor layer is positioned on the other side of the quantum well layer;
and the N-type semiconductor layers in the two adjacent micro LED structures are connected with each other.
The micro LED structure and the color display device provided by the embodiment of the invention have the beneficial effects that:
1. the light emitting layer of the micro LED structure can excite light with one or more wavelengths, the light emitted from the light emitting surface is transmitted by the light with one color selected by the color selection layer, the light transmission of other colors is inhibited, and the single micro LED structure realizes the light emitting with a single color;
2. the reflecting layer is arranged on one side of the luminescent layer, which is far away from the color selection layer, so that the photon utilization rate can be improved, and the conversion efficiency can be improved;
3. the plurality of micro LED structures are applied to the color display device, a single micro LED structure is equivalent to a sub-pixel, and three micro LED structures can form a display pixel, so that color display is realized;
4. the micro LED structure is applied to a color display device, can be prepared by a compatible semiconductor process, does not need expensive quantum dot printing equipment and a complex mass transfer technology, and has high production efficiency and yield.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of a micro LED structure according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a micro LED structure according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram of a micro LED structure according to a third embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a color display device according to a fourth embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a color display device according to a fifth embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a color display device according to a sixth embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a color display device according to a seventh embodiment of the present invention;
fig. 8 is a schematic structural diagram of a color display device according to an eighth embodiment of the present invention.
Icon: 100-micro LED structure; 110-a reflective layer; 120-a color selection layer; 130-a light emitting layer; 131-a quantum well layer; a 132-P type semiconductor layer; 133-N type semiconductor layer; 134-wavelength converting material; 200-a color display device; 210-drive circuit substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
First embodiment
Referring to fig. 1, arrows indicate light directions, and the present embodiment provides a micro LED structure 100, where the micro LED structure 100 includes a light emitting layer 130, a reflective layer 110 and a color selection layer 120, where the light emitting layer 130 is used for electroluminescence, the reflective layer 110 is located on one side of the light emitting layer 130, and the color selection layer 120 is located on the other side of the light emitting layer 130.
Specifically, the light emitting layer 130 at least includes an electrically excited material, and may also include an electrically excited material and a plurality of optically excited materials to realize multi-wavelength excitation, where the electrically excited material may be a quantum well, and the optically excited material may be a quantum dot.
The color selection layer 120 is used to select one color of light to transmit. The color selection layer 120 is a light wave filter comprising micro-nano structures. The color selection layer 120 is located on the light emitting surface of the light emitting layer 130, and one of the lights emitted by the light emitting layer 130 can transmit through the color selection layer 120, while the other lights are inhibited or unable to emit.
The reflective layer 110 is disposed on a side of the light emitting layer 130 away from the color selection layer 120, that is, the reflective layer 110 is disposed on the other side of the light emitting surface of the light emitting layer 130, and has a high reflectivity for visible light bands, and the reflectivity for visible light bands is greater than 80%, so that the photon utilization rate can be improved, and the conversion efficiency can be improved.
The light emitting layer 130 of the micro LED structure 100 can excite light with one or more wavelengths, light emitted from the light emitting surface is transmitted by the light with one color selected by the color selection layer 120, light transmission of other colors is suppressed, and a single micro LED structure 100 realizes single color display.
A plurality of micro LED structures 100 are applied to a color display device 200 (shown in fig. 4), a single micro LED structure 100 corresponds to a sub-pixel, and three micro LED structures 100 can constitute one display pixel, thereby realizing color display.
The micro LED structure 100 is applied to the color display device 200, and can be manufactured by a compatible semiconductor process without using expensive quantum dot printing equipment and a complicated mass transfer technology, and thus, the production efficiency and the yield are high.
Second embodiment
Referring to fig. 2, the present embodiment provides a micro LED structure 100, the micro LED structure 100 includes a light emitting layer 130, a reflective layer 110 and a color selection layer 120, wherein the light emitting layer 130 is used for electroluminescence, the reflective layer 110 is located on one side of the light emitting layer 130, and the color selection layer 120 is located on the other side of the light emitting layer 130.
Specifically, the light emitting layer 130 includes a quantum well layer 131, a P-type semiconductor layer 132, an N-type semiconductor layer 133, and a wavelength converting material 134.
The P-type semiconductor layer 132 is positioned on one side of the quantum well layer 131, the N-type semiconductor layer 133 is positioned on the other side of the quantum well layer 131, and the N-type semiconductor layer 133 is spaced apart from the reflective layer 110 with respect to the P-type semiconductor layer 132. The quantum well layer 131 is used for electroluminescence, and the quantum well layer 131 can excite at least one short wavelength band of light by electrical injection, wherein the optical band of electroluminescence is preferably a blue band or an ultraviolet band.
A hole is formed in the P-type semiconductor layer 132 on the side away from the N-type semiconductor layer 133, the depth of the hole is smaller than the thickness of the P-type semiconductor layer 132, and the hole extends into a part of the material of the P-type semiconductor layer 132.
The color selection layer 120 is used to select one color of light to transmit. The color selection layer 120 is a light wave filter comprising micro-nano structures. The reflective layer 110 is located on the other side of the emitting surface of the light emitting layer 130, has a high reflectivity to the visible light band, and has a reflectivity to the visible light band greater than 80%, so that the photon utilization rate can be improved, and the conversion efficiency can be improved.
Third embodiment
Referring to fig. 3, the present embodiment provides a micro LED structure 100, the micro LED structure 100 includes a light emitting layer 130, a reflective layer 110 and a color selection layer 120, wherein the light emitting layer 130 is used for electroluminescence, the reflective layer 110 is located on one side of the light emitting layer 130, and the color selection layer 120 is located on the other side of the light emitting layer 130.
Specifically, the light emitting layer 130 includes a quantum well layer 131, a P-type semiconductor layer 132, an N-type semiconductor layer 133, and a wavelength converting material 134.
The P-type semiconductor layer 132 is positioned at one side of the quantum well layer 131, and the N-type semiconductor layer 133 is positioned at the other side of the quantum well layer 131. The quantum well layer 131 is used for electroluminescence, and the quantum well layer 131 can excite at least one short wavelength band of light by electrical injection, wherein the optical band of electroluminescence is preferably a blue band or an ultraviolet band.
The P-type semiconductor layer 132 is provided with nano-sized holes on the side far away from the N-type semiconductor layer 133, the depth of the holes is greater than the sum of the thicknesses of the P-type semiconductor layer 132 and the quantum well layer 131 and less than the sum of the thicknesses of the P-type semiconductor layer 132, the quantum well layer 131 and the N-type semiconductor layer 133, and the holes sequentially penetrate through the P-type semiconductor layer 132 and the quantum well layer 131 and extend into a part of the material of the N-type semiconductor layer 133.
The color selection layer 120 is used to select one color of light to transmit. The color selection layer 120 is a light wave filter comprising micro-nano structures. The reflective layer 110 is located on the other side of the emitting surface of the light emitting layer 130, has a high reflectivity to the visible light band, and has a reflectivity to the visible light band greater than 80%, so that the photon utilization rate can be improved, and the conversion efficiency can be improved.
The first to third embodiments provide advantageous effects of the micro LED structure 100 including:
1. the light emitting layer 130 of the micro LED structure 100 can excite light with one or more wavelengths, light emitted from the light emitting surface is transmitted by the light with one color selected by the color selection layer 120, light transmission of other colors is inhibited, and single color display is realized by a single micro LED structure 100;
2. the reflective layer 110 disposed on the side of the light emitting layer 130 away from the color selection layer 120 can improve the photon utilization rate and the conversion efficiency;
3. a plurality of micro LED structures 100 are applied to the color display device 200, a single micro LED structure 100 is equivalent to a sub-pixel, and three micro LED structures 100 can form one display pixel, thereby realizing color display;
4. the micro LED structure 100 is applied to the color display device 200, and can be manufactured by a compatible semiconductor process without using expensive quantum dot printing equipment and a complicated mass transfer technology, and thus, the production efficiency and the yield are high.
Fourth embodiment
Referring to fig. 4, the present embodiment provides a color display device 200, and the color display device 200 includes a driving circuit substrate 210 and the micro LED structure 100 provided in the first embodiment.
Specifically, a plurality of micro LED structures 100 are arrayed on the driving circuit substrate 210.
In the color display device 200 provided in this embodiment, one micro LED structure 100 is equivalent to one sub-pixel, and three micro LED structures 100 distributed to display red, green, and blue can form one display pixel, thereby implementing color display.
Fifth embodiment
Referring to fig. 5, the present embodiment provides a color display device 200, and the color display device 200 includes a driving circuit substrate 210 and the micro LED structure 100 provided in the second embodiment.
Specifically, a plurality of micro LED structures 100 are arrayed on the driving circuit substrate 210. Wherein the N-type semiconductor layers 133 in two adjacent micro LED structures 100 are spaced apart from each other.
In the color display device 200 provided in this embodiment, one micro LED structure 100 is equivalent to one sub-pixel, and three micro LED structures 100 distributed to display red, green, and blue can form one display pixel, thereby implementing color display.
Sixth embodiment
Referring to fig. 6, the present embodiment provides a color display device 200, where the color display device 200 includes a driving circuit substrate 210 and the micro LED structure 100 provided in the third embodiment.
Specifically, a plurality of micro LED structures 100 are arrayed on the driving circuit substrate 210. Wherein the N-type semiconductor layers 133 in two adjacent micro LED structures 100 are spaced apart from each other.
In the color display device 200 provided in this embodiment, one micro LED structure 100 is equivalent to one sub-pixel, and three micro LED structures 100 distributed to display red, green, and blue can form one display pixel, thereby implementing color display.
Seventh embodiment
Referring to fig. 7, the present embodiment provides a color display device 200, and the color display device 200 includes a driving circuit substrate 210 and the micro LED structure 100 provided in the second embodiment.
Specifically, a plurality of micro LED structures 100 are arrayed on the driving circuit substrate 210. The N-type semiconductor layers 133 in two adjacent micro LED structures 100 are connected to each other, so that the N-type semiconductor layers 133 of all the micro LED structures 100 are connected into a whole, and can synchronously receive electrical signals, thereby simplifying the driving strategy.
In the color display device 200 provided in this embodiment, one micro LED structure 100 is equivalent to one sub-pixel, and three micro LED structures 100 distributed to display red, green, and blue can form one display pixel, thereby implementing color display.
Eighth embodiment
Referring to fig. 8, the present embodiment provides a color display device 200, where the color display device 200 includes a driving circuit substrate 210 and the micro LED structure 100 provided in the third embodiment.
Specifically, a plurality of micro LED structures 100 are arrayed on the driving circuit substrate 210. The N-type semiconductor layers 133 in two adjacent micro LED structures 100 are connected to each other, so that the N-type semiconductor layers 133 of all the micro LED structures 100 are connected into a whole, and can synchronously receive electrical signals, thereby simplifying the driving strategy.
In the color display device 200 provided in this embodiment, one micro LED structure 100 is equivalent to one sub-pixel, and three micro LED structures 100 distributed to display red, green, and blue can form one display pixel, thereby implementing color display.
The fourth to eighth embodiments provide the color display device 200 with advantageous effects including:
1. the light emitting layer 130 of each micro LED structure 100 can excite light with one or more wavelengths, light emitted from the light emitting surface is transmitted by light with one color selected by the color selection layer 120, light transmission of other colors is inhibited, and single micro LED structure 100 realizes single color display;
2. the reflective layer 110 disposed on the side of the light emitting layer 130 away from the color selection layer 120 can improve the photon utilization rate and the conversion efficiency;
3. in the color display device 200, a single micro LED structure 100 corresponds to a sub-pixel, and three micro LED structures 100 can constitute one display pixel, thereby realizing color display;
4. in the process of manufacturing the color display device 200, the manufacturing process can be compatible with a semiconductor process, expensive quantum dot printing equipment and a complex mass transfer technology are not required, and the production efficiency and the yield are high.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A micro LED structure, comprising:
a light-emitting layer (130) containing at least an electrically and/or optically excitable material to enable multi-wavelength excitation;
a reflective layer (110) on one side of the light-emitting layer (130);
and the color selection layer (120) is positioned on the other side of the light-emitting layer (130), and the color selection layer (120) is used for selecting one color of light to transmit.
2. The micro LED structure of claim 1, wherein the light emitting layer (130) comprises:
a quantum well layer (131) for electroluminescence;
a P-type semiconductor layer (132) on one side of the quantum well layer (131);
an N-type semiconductor layer (133) on the other side of the quantum well layer (131), the N-type semiconductor layer (133) being remote from the reflective layer (110) relative to the P-type semiconductor layer (132).
3. The micro LED structure of claim 2, wherein the P-type semiconductor layer (132) has a hole opened on a side thereof away from the N-type semiconductor layer (133), and the light emitting layer (130) further comprises:
a wavelength converting material (134) disposed within the aperture.
4. The micro LED structure of claim 3, wherein the depth of the hole is less than the thickness of the P-type semiconductor layer (132), the hole extending into a portion of the material of the P-type semiconductor layer (132).
5. A micro LED structure according to claim 3, wherein the depth of the hole is larger than the sum of the thicknesses of the P-type semiconductor layer (132) and the quantum well layer (131) and smaller than the sum of the thicknesses of the P-type semiconductor layer (132), the quantum well layer (131) and the N-type semiconductor layer (133), and the hole penetrates through the P-type semiconductor layer (132) and the quantum well layer (131) in sequence and extends into a part of the material of the N-type semiconductor layer (133).
6. The micro LED structure according to claim 3, wherein the color selective layer (120) is a light wave filter comprising micro nano structures and the wavelength converting material (134) comprises quantum dots or phosphor.
7. A color display device, characterized in that it comprises a plurality of micro LED structures according to claim 1.
8. The color display device according to claim 7, further comprising:
the driving circuit substrate (210) is connected with the micro LED structure arrays on the driving circuit substrate (210).
9. A color display device according to claim 7, characterized in that the luminescent layer (130) comprises:
a quantum well layer (131) for electroluminescence;
a P-type semiconductor layer (132) on one side of the quantum well layer (131);
an N-type semiconductor layer (133) on the other side of the quantum well layer (131);
wherein the N-type semiconductor layers (133) in two adjacent micro LED structures are arranged at intervals.
10. A color display device according to claim 7, characterized in that the luminescent layer (130) comprises:
a quantum well layer (131) for electroluminescence;
a P-type semiconductor layer (132) on one side of the quantum well layer (131);
an N-type semiconductor layer (133) on the other side of the quantum well layer (131);
wherein the N-type semiconductor layers (133) in two adjacent micro LED structures are mutually connected and arranged.
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| CN211858672U (en) * | 2020-04-21 | 2020-11-03 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode |
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Application publication date: 20210416 |