CN112670356B - Semiconductor material doped with delta in monomolecular layer, preparation method thereof and detector - Google Patents
Semiconductor material doped with delta in monomolecular layer, preparation method thereof and detector Download PDFInfo
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Abstract
The application provides a delta-doped semiconductor material in a monomolecular layer, a preparation method thereof and a detector. A delta-doped semiconductor material within the monolayer comprising a base buffer layer and one or more single-molecule doped layers disposed on the base buffer layer; the base buffer layer includes a group III element and a group V element; the single-molecule doped layer comprises undoped parts and doped parts which are alternately arranged, the undoped parts are identical to the components of the basic buffer layer, the doped parts comprise the same elements and doped elements as the undoped parts, and the doped elements comprise one or more of group II elements, group VI elements and group IV elements. A method of making a semiconductor material comprising: and growing a basic buffer layer on the substrate, and then alternately growing undoped parts and doped parts on the basic buffer layer to obtain the single-molecule doped layer. The detector comprises a semiconductor material. The delta-doped semiconductor material in the monomolecular layer has higher carrier concentration.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a delta-doped semiconductor material in a monomolecular layer, a preparation method thereof and a detector.
Background
The doping concentration in the III-V semiconductor material directly affects the performance of the optoelectronic device. Delta doping is a material growth means that effectively increases the distribution of impurity concentration in a semiconductor material by confining the impurity atoms incorporated into the semiconductor to only one or a few layers of semiconductor atoms, and is known as delta doping technology because the width of the doped region is on the order of the lattice constant of the material, making the width of the impurity atom concentration distribution narrower than the wavelength of the de broglie wave of the free carriers, usually expressed as a digital delta function. The technology can effectively improve the distribution form of impurity concentration in the material, thereby obtaining semiconductor material and photoelectric device with better performance.
Taking III-V semiconductor GaAs and GaSb as examples, the doping sources mainly comprise n-type doping sources, such as VI group elements Te, se and S; p-type dopant sources such as group II Zn, group IV Ge, si, and the like. However, with the innovations in the types of optoelectronic devices, such as plasma-enhanced light emitting and detecting devices, higher demands are placed on carrier concentration, whereas the highest carrier concentration achievable with existing materials is only E20.
In view of this, the present application is specifically proposed.
Disclosure of Invention
The invention aims to provide a delta-doped semiconductor material in a monomolecular layer, a preparation method thereof and a detector, so as to solve the problems.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a delta-doped semiconductor material within a monolayer comprising a base buffer layer and one or more single-molecule doped layers disposed on the base buffer layer;
the base buffer layer includes a group III element and a group V element;
the single-molecule doped layer comprises undoped parts and doped parts which are alternately arranged, the undoped parts are identical to the components of the basic buffer layer, the doped parts comprise the same elements and doped elements as the undoped parts, and the doped elements comprise one or more of group II elements, group VI elements and group IV elements.
Preferably, one or more spacer buffer layers are arranged between the single molecule doped layers, and the components of the spacer buffer layers are the same as those of the base buffer layer.
Preferably, the base buffer layer includes any one of GaAs, gaSb, and InP.
Preferably, the doping element includes any one of Te, se, S, zn, ge, si;
preferably, the doped part accounts for 1% -20% of the total volume of the single-molecule doped layer.
Preferably, the composition of adjacent two single molecule doped layers is the same or different.
Preferably, the carrier concentration of the semiconductor material is E21-E22;
preferably, the thickness of the semiconductor material is 100-1000nm.
Alternatively, the thickness of the semiconductor material may be any value between 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, and 100-1000nm.
A method of making the semiconductor material, comprising:
and growing the basic buffer layer on the substrate, and then alternately growing the undoped part and the doped part on the basic buffer layer to obtain the single-molecule doped layer.
Preferably, the substrate and the base buffer layer are the same composition;
preferably, the temperature of the substrate is 500-600 ℃, and the III/V beam ratio is 1 (1-20).
Alternatively, the temperature of the substrate may be any value between 500, 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, and 500-600 ℃, and the III/V beam ratio may be 1: 1. 1:5. 1: 10. 1: 15. 1:20 and 1 (1-20).
Preferably, the preparation method further comprises:
one or more spacer buffer layers are grown between a plurality of the single-molecule doped layers;
the composition of the spacer buffer layer is the same as the base buffer layer.
A detector comprises the semiconductor material.
Compared with the prior art, the invention has the beneficial effects that:
according to the delta-doped semiconductor material in the monomolecular layer, the single-molecule doping layer is arranged on the basic buffer layer, and then the undoped part and the doped part are alternately arranged on the single-molecule doping layer, so that delta-doped II-group elements, VI-group elements and IV-group elements in the transverse direction in one molecular layer are realized, and the carrier concentration of the semiconductor material is improved;
the preparation method of the delta-doped semiconductor material in the monolayer realizes the transverse delta doping in the monolayer and has high processing precision;
the delta-doped semiconductor material in the monolayer can be widely used in detectors.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope of the present invention.
Fig. 1 is a schematic structural diagram of a semiconductor material obtained in example 1;
fig. 2 is a schematic structural diagram of the semiconductor material obtained in example 4.
Reference numerals:
1-a substrate; a 2-GaSb buffer layer; 3-a single molecule doped layer; 30-undoped portion; 31-doped portions; 4-spacer buffer layer.
Detailed Description
The term as used herein:
"prepared from … …" is synonymous with "comprising". The terms "comprising," "including," "having," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
The conjunction "consisting of … …" excludes any unspecified element, step or component. If used in a claim, such phrase will cause the claim to be closed, such that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the claim body, rather than immediately following the subject, it is limited to only the elements described in that clause; other elements are not excluded from the stated claims as a whole.
When an equivalent, concentration, or other value or parameter is expressed as a range, preferred range, or a range bounded by a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when ranges of "1 to 5" are disclosed, the described ranges should be construed to include ranges of "1 to 4", "1 to 3", "1 to 2 and 4 to 5", "1 to 3 and 5", and the like. When a numerical range is described herein, unless otherwise indicated, the range is intended to include its endpoints and all integers and fractions within the range.
In these examples, the parts and percentages are by mass unless otherwise indicated.
"parts by mass" means a basic unit of measurement showing the mass ratio of a plurality of components, and 1 part may be any unit mass, for example, 1g may be expressed, 2.689g may be expressed, and the like. If we say that the mass part of the a component is a part and the mass part of the B component is B part, the ratio a of the mass of the a component to the mass of the B component is represented as: b. alternatively, the mass of the A component is aK, and the mass of the B component is bK (K is an arbitrary number and represents a multiple factor). It is not misunderstood that the sum of the parts by mass of all the components is not limited to 100 parts, unlike the parts by mass.
"and/or" is used to indicate that one or both of the illustrated cases may occur, e.g., a and/or B include (a and B) and (a or B).
Embodiments of the present invention will be described in detail below with reference to specific examples, but it will be understood by those skilled in the art that the following examples are only for illustrating the present invention and should not be construed as limiting the scope of the present invention. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Example 1
The embodiment provides a method for obtaining Te heavy doped n-type GaSb by delta doping in a monomolecular layer, which comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), heating the substrate to 500 ℃, and treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting an Sb source, and starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Delta doping growth of Te doped GaSb of monolayer:
a. on a 50nm thick GaSb buffer layer, the Sb source was turned on first, and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaSb on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown GaSb on the 50nm thick GaSb buffer layer is 50%, starting a Te source and starting the growth of the Te doped GaSb;
c. when the coverage of the Te doped GaSb on the 50nm thick GaSb buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of the Te doped GaSb;
d. continuing to grow GaSb, when the coverage of the GaSb buffer layer with the thickness of 50nm is 30%, starting a Te source, and starting the growth of Te doped with GaSb;
e. when the coverage of the Te doped GaSb covered 50nm thick GaSb buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of the Te doped GaSb;
f. at this time, the growth of one molecular layer Te doped with GaSb is completed.
(4) Repeating the step (3) until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 520℃and the III/V beam ratio was 1:4.
The structure of the Te heavily doped n-type GaSb obtained by delta doping in the monolayer obtained in this example is shown in fig. 1:
specifically, the semiconductor material includes:
the semiconductor device comprises a GaSb buffer layer 2 arranged on a substrate 1, and a single-molecule doped layer 3 arranged on the GaSb buffer layer 2, wherein the single-molecule doped layer 3 comprises an undoped part 30 and a doped part 31, the undoped part 30 is GaSb, and the doped part 31 is Te doped with GaSb. Wherein the arrangement order and the proportion of the undoped portion 30 and the doped portion 31 in each single molecule doped layer 3 are the same.
In an alternative embodiment, the number of the single-molecule doped layers 3 may be selected according to the thickness, and may be 1 layer, or may be multiple layers, such as 2 layers, 5 layers, 10 layers, etc.
Example 2
The embodiment provides a method for obtaining Te heavy doped n-type GaSb by delta doping in a monomolecular layer, which comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), heating the substrate to 500 ℃, and treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting an Sb source, and starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Delta doping growth of Te doped GaSb of monolayer:
a. on a 50nm thick GaSb buffer layer, the Sb source was turned on first, and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaSb on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown GaSb on the 50nm thick GaSb buffer layer is 40%, starting a Te source and starting the growth of the Te doped GaSb;
c. when the coverage of the Te doped GaSb on the 50nm thick GaSb buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of the Te doped GaSb;
d. continuing to grow GaSb, when the coverage of the GaSb buffer layer with the thickness of 50nm is 40%, starting a Te source, and starting the growth of Te doped with GaSb;
e. when the coverage of the Te doped GaSb covered 50nm thick GaSb buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of the Te doped GaSb;
f. at this time, the growth of one molecular layer Te doped with GaSb is completed.
(4) Repeating the step (3) reversely until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 550℃and the III/V beam ratio was 1:4.
Delta doping in the monolayer obtained in this example gave a Te heavily doped n-type GaSb similar in structure to the material obtained in example 1, with the only difference being the ratio of undoped portion 30 to doped portion 31.
Example 3
The embodiment provides a method for obtaining Zn heavy doped p-type GaSb by delta doping in a monolayer, which comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), heating the substrate to 500 ℃, and treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting an Sb source, and starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Delta doped growth of Zn doped GaSb of monolayer:
a. on a 50nm thick GaSb buffer layer, the Sb source was turned on first, and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaSb on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown GaSb on the 50nm thick GaSb buffer layer is 40%, starting a Zn source and starting the growth of Zn doped GaSb;
c. when the coverage of the Zn-doped GaSb on the 50nm thick GaSb buffer layer is 10%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of the Zn-doped GaSb;
d. continuing to grow GaSb, and when the coverage of the GaSb buffer layer with the thickness of 50nm is 40%, starting a Zn source and starting the growth of Zn doped GaSb;
e. when the coverage of the Zn-doped GaSb covered 50nm thick GaSb buffer layer is 10%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of the Zn-doped GaSb;
f. at this time, the growth of a molecular layer Zn doped with GaSb is completed.
(4) Repeating the step (3) reversely until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 550℃and the III/V beam ratio was 1:5.
Delta doping in the monolayer obtained in this example gave a Zn heavily doped p-type GaSb similar in structure to the material obtained in example 1, with the only differences being the ratio of undoped portion 30 to doped portion 31 and the doping element.
Example 4
The embodiment provides a method for obtaining Zn heavy doped p-type GaSb by delta doping in a monolayer, which comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), heating the substrate to 500 ℃, and treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting an Sb source, and starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Delta doped growth of Zn doped GaSb of monolayer:
a. on a 50nm thick GaSb buffer layer, the Sb source was turned on first, and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaSb on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown GaSb on the 50nm thick GaSb buffer layer is 50%, starting a Zn source and starting the growth of Zn doped GaSb;
c. when the coverage of the Zn-doped GaSb on the 50nm thick GaSb buffer layer is 5%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of the Zn-doped GaSb;
d. continuing to grow GaSb, and when the coverage of the GaSb buffer layer with the thickness of 50nm is 40%, starting a Zn source and starting the growth of Zn doped GaSb;
e. when the coverage of the Zn-doped GaSb covered 50nm thick GaSb buffer layer is 5%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of the Zn-doped GaSb;
f. at this time, the growth of a molecular layer Zn doped with GaSb is completed.
(4) Undoped GaSb growth: firstly, a Sb source and a 10S Ga source are started, and undoped GaSb of 3 molecular layers is grown.
(5) Delta doped growth of Zn doped GaSb of monolayer:
a. on a 50nm thick GaSb buffer layer, the Sb source was turned on first, and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaSb on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown GaSb on the 50nm thick GaSb buffer layer is 40%, starting a Zn source and starting the growth of Zn doped GaSb;
c. when the coverage of the Zn doped GaSb on the 50nm thick GaSb buffer layer is 10%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of Zne doped GaSb;
d. continuing to grow GaSb, and when the coverage of the GaSb buffer layer with the thickness of 50nm is 40%, starting a Zn source and starting the growth of Zn doped GaSb;
e. when the coverage of the Zn-doped GaSb covered 50nm thick GaSb buffer layer is 10%, closing a Zn source, and simultaneously extracting the residual Zn atmosphere in the reaction cavity to stop the growth of the Zn-doped GaSb;
f. at this time, the growth of a molecular layer Zn doped with GaSb is completed.
(6) Undoped GaSb growth: firstly, a Sb source and a 10S Ga source are started, and undoped GaSb of 3 molecular layers is grown.
(7) Repeating the steps (3), (4) or (5) and (6) reversely until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 550℃and the III/V beam ratio was 1:5.
The delta doping in the monolayer obtained in this embodiment obtains a Zn heavily doped p-type GaSb, the structure of which is shown in fig. 2, and specifically includes:
the method comprises the steps of providing a GaSb buffer layer 2 on a substrate 1, providing a single-molecule doped layer 3 on the GaSb buffer layer 2, providing a plurality of layers on the single-molecule doped layer 3, wherein each layer comprises an undoped part 30 and a doped part 31, the undoped part 30 is GaSb, and the doped part 31 is Zn doped GaSb. In each two adjacent single-molecule doped layers 3, the proportion of the undoped part 30 and the doped part 31 is different, and a spacing buffer layer 4 is arranged between the two adjacent single-molecule doped layers 3, and the component of the spacing buffer layer 4 is GaSb.
Example 5
The embodiment provides a method for obtaining Te heavy doping n-type GaAs by delta doping in a monomolecular layer, which comprises the following steps:
(1) GaAs is taken as a substrate (diameter is 2 inches), and the substrate is heated to 500 ℃ to treat the surface oxide layer;
(2) And (3) growth of a GaAs buffer layer: firstly, starting an As source, and starting a Ga source after 5 minutes; gaAs growth rate was confirmed by RHEED (high energy electron diffraction) to obtain a 50nm thick GaAs buffer layer.
(3) Delta doped growth of Te doped GaAs of a monolayer:
a. on a 50nm thick GaAs buffer layer, the As source was first turned on and after 5 minutes the Ga source was turned on. Controlling the migration time of the grown GaAs on the 50nm thick GaSb buffer layer to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of newly grown GaAs on a 50nm thick GaAs buffer layer is 40%, starting a Te source, and starting the growth of Te doped GaAs;
c. when the coverage of Te doped GaAs on the 50nm thick GaAs buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of Te doped GaAs;
d. continuing to grow GaAs, when the coverage of the GaAs buffer layer with the thickness of 50nm is 40%, starting a Te source, and starting the growth of Te doped GaAs;
e. when the coverage of the Te doped GaAs covered by the 50nm thick GaAs buffer layer is 10%, closing the Te source, and simultaneously extracting the residual Te atmosphere in the reaction cavity to stop the growth of the Te doped GaAs;
f. at this time, the growth of one molecular layer Te doped with GaAs is completed.
(4) Repeating the step (3) reversely until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 550℃and the III/V beam ratio was 1:4.
Delta doping in the monolayer obtained in this example gave Te heavily doped n-GaAs with a structure similar to that of the material obtained in example 2, except for the difference in composition.
Example 6
The embodiment provides a method for obtaining Si heavily doped n-type InP by delta doping in a monolayer, which comprises the following steps:
(1) InP is taken as a substrate (diameter is 2 inches), and the substrate is heated to 500 ℃ to treat the surface oxide layer;
(2) And (3) growing an InP buffer layer: firstly, starting a P source, and starting an In source after 5 minutes; inP growth rate was confirmed by RHEED (high energy electron diffraction) to obtain 50nm thick InP buffer layer.
(3) Delta doped growth of Si doped InP of monolayer:
a. on a 50nm thick InP buffer layer, the P source was turned on first, and after 5 minutes the In source was turned on. Controlling the migration time of the grown InP on the InP buffer layer with the thickness of 50nm to be 0-1s, and controlling the migration speed to be 0.5ML/s;
b. when the coverage of the newly grown InP on the InP buffer layer with the thickness of 50nm is 40%, starting an Si source and starting the growth of Si doped InP;
c. when the coverage of the Si-doped InP on the 50 nm-thick InP buffer layer is 10%, closing the Si source, and simultaneously extracting the residual Si atmosphere in the reaction cavity to stop the growth of the Si-doped InP;
d. continuing to grow InP, when the coverage of the InP covered 50nm thick InP buffer layer is 40%, starting an Si source, and starting the growth of Si doped InP;
e. when the coverage of the Si doped InP covered 50nm thick InP buffer layer is 10%, closing the Si source, and simultaneously extracting the residual Si atmosphere in the reaction cavity to stop the growth of the Si doped InP;
f. at this time, the growth of one molecular layer of Si-doped InP is completed.
(4) Repeating the step (3) reversely until the required thickness (500 nm) is reached.
Wherein the growth parameters include: the substrate temperature was 550℃and the III/V beam ratio was 1:4.
Delta doping in the monolayer obtained in this example gives Si heavily doped n-type InP with a structure similar to that obtained in example 2, except for the difference in composition.
In other alternative embodiments, the doping element may be an element such as Se, S, ge, te, and the preparation method may be any of the above examples 1 to 6, and only the source material needs to be replaced.
Comparative example 1
The method for performing Te doping n-type GaSb by conventional delta doping comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), and heating the substrate at 500 ℃ to achieve the aim of pre-treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Te doped GaSb growth:
a. firstly, starting a Ga source after 5 minutes on a 50nm thick GaSb buffer layer, growing GaSb with a 3-molecular-layer thickness, and closing the Ga source;
b. starting Te source, growing Te with 1 molecular layer thickness, and closing Te source;
c. opening a Ga source, growing GaSb with a molecular layer thickness of 3, and closing the Ga source;
(4) Repeating the step (3) reversely until the required thickness (500 nm) is reached.
Comparative example 2
The conventional method for carrying out Te doped n-type GaSb comprises the following steps:
(1) Taking GaSb as a substrate (diameter is 2 inches), and heating the substrate at 500 ℃ to achieve the aim of pre-treating the surface oxide layer;
(2) GaSb buffer layer growth: firstly, starting a Ga source after 5 minutes; the growth rate of GaSb was confirmed by RHEED (high energy electron diffraction) to obtain a GaSb buffer layer 50nm thick.
(3) Te doped GaSb growth: on a 50nm thick GaSb buffer layer, firstly starting a Ga source after 5 minutes, simultaneously starting a Te source, regulating and controlling the beam current ratio of the Ga source and the Te source, and realizing the Te doped GaSb with different doping concentrations. Until the desired thickness (500 nm).
(4) And closing Te sources and Ga sources in sequence, and closing Sb sources after 10 min.
The semiconductor materials obtained in examples 1 to 6 and comparative examples 1 to 2 were tested for carrier concentration, and the results are shown in table 1 below:
table 1 test results
As can be seen from table 1 above, the semiconductor material delta-doped in the monolayer provided in the present application has a higher carrier concentration than the semiconductor material of the existing structure.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the claims below, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Claims (2)
1. A delta-doped semiconductor material within a monolayer, comprising a base buffer layer and one or more single-molecule doped layers disposed on the base buffer layer;
the base buffer layer includes a group III element and a group V element;
the single-molecule doped layer comprises undoped parts and doped parts which are transversely and alternately arranged in the molecular layer, the undoped parts are identical to the components of the basic buffer layer, the doped parts comprise the same elements and doped elements as the undoped parts, and the doped elements comprise one or more of group II elements, group VI elements and group IV elements;
one or more interval buffer layers are arranged among the single-molecule doped layers, and the components of the interval buffer layers are the same as those of the basic buffer layer;
the basic buffer layer comprises any one of GaAs, gaSb and InP;
the doping element includes any one of Te, se, S, zn, ge, si;
the doping part accounts for 1% -20% of the total volume of the single-molecule doping layer;
the components of two adjacent single-molecule doped layers are the same or different;
the carrier concentration of the semiconductor material is E21-E22;
the thickness of the semiconductor material is 100-1000nm;
the preparation method of the semiconductor material comprises the following steps:
growing the basic buffer layer on a substrate, and then alternately growing the undoped part and the doped part on the basic buffer layer to obtain the single-molecule doped layer;
the substrate and the basic buffer layer have the same composition;
the temperature of the substrate is 500-600 ℃, and the III/V beam current ratio is 1 (1-20);
the preparation method further comprises the following steps:
one or more spacer buffer layers are grown between a plurality of the single molecule doped layers.
2. A probe comprising the semiconductor material of claim 1.
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| US4882609A (en) * | 1984-11-19 | 1989-11-21 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. | Semiconductor devices with at least one monoatomic layer of doping atoms |
| US5060234A (en) * | 1984-11-19 | 1991-10-22 | Max-Planck Gesellschaft Zur Forderung Der Wissenschaften | Injection laser with at least one pair of monoatomic layers of doping atoms |
| JPS61216316A (en) * | 1985-02-22 | 1986-09-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5013685A (en) * | 1989-11-02 | 1991-05-07 | At&T Bell Laboratories | Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon |
| US5314547A (en) * | 1992-09-28 | 1994-05-24 | General Motors Corporation | Rare earth slab doping of group III-V compounds |
| JPH08148673A (en) * | 1994-11-15 | 1996-06-07 | Sanyo Electric Co Ltd | Semiconductor device |
| TW550839B (en) * | 2001-07-25 | 2003-09-01 | Shinetsu Handotai Kk | Light emitting element and method for manufacturing thereof |
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2020
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