CN112658529B - Soldering paste and application thereof - Google Patents
Soldering paste and application thereof Download PDFInfo
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- CN112658529B CN112658529B CN202011563207.1A CN202011563207A CN112658529B CN 112658529 B CN112658529 B CN 112658529B CN 202011563207 A CN202011563207 A CN 202011563207A CN 112658529 B CN112658529 B CN 112658529B
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Abstract
The invention relates to the technical field of device welding, and particularly discloses a soldering paste which comprises flaky nano silver, a metal organic source and an organic solvent carrier. The invention also discloses application of the soldering paste in an electronic device packaging interconnection structure, wherein the electronic device packaging interconnection structure comprises a first mother sheet, a second mother sheet and a connecting layer for connecting the first mother sheet and the second mother sheet, the connecting layer is formed by sintering the soldering paste through a sintering process of heating and pressurizing, and in the sintering process, the heating temperature is 130-300 ℃, and the pressurizing pressure is 1-20 MPa. The invention can be well applied to the field of electronic packaging of low-temperature welding high-temperature service, the bonding degree of a connecting interface of a connecting layer formed by sintering the soldering paste is good, uniform and compact, the shear strength can reach over 51MPa at 150 ℃, the high-shear strength is realized, and the invention can be well applied to the packaging interconnection of electronic devices.
Description
Technical Field
The invention relates to the technical field of device welding, in particular to a soldering paste and application thereof in an electronic device packaging interconnection structure.
Background
With the development of automatic driving, aerospace, high-speed rail and oil gas exploration and the like, the working environment required by the development is increasingly severe. The corresponding demands on the chip are also increasing. Conventional silicon-based chips have not been able to meet their needs. Therefore, a new chip that can resist high temperature, has high breakdown voltage, and can adapt to high current density and high switching frequency is urgently needed. Most researchers now aim at wide bandgap semiconductors (e.g., siC and GaN) that can meet the demand for high performance chips. However, the high temperature, high current, high density, etc. operating conditions mentioned above generally mean that the operating temperature is greater than 250 ℃. Whereas conventional solders such as tin-lead solder often have melting points below 250 c. Chips intended to have conventional solder as an interconnect layer will eventually fail in this environment due to solder joint melting. There is therefore an urgent need for materials which meet these high requirements and achieve stable high-temperature service. At present, a solder filled with nano material gradually draws attention of researchers. Nanomaterials have very small dimensions, which can provide many advantages. Firstly, the small size can generate some quantum effect, then the small size means that the specific surface area is larger, and the driving force caused by the reduction of the surface area can be used for realizing the diffusion between atoms without reaching the melting point in the sintering process, thereby realizing the effect of sintering interconnection.
The metallic silver and the metallic copper have very high melting points, the solder taking the nano silver or the copper as the filling material can well realize the effect of sintering interconnection, and once the sintering is finished, the high melting point can endow the solder with very stable performance. Due to the small size effect of the nano silver or copper, sintering diffusion can be realized at a relatively low temperature, and high-stability interconnection between the chip and the substrate is realized. However, there are a lot of problems still to be solved when nano silver or copper is used as a filling material in the process of applying to the sintering of the solder paste, for example, when the size of nano silver or copper is less than a certain value, the surface energy of nano silver or copper becomes very high, but the high surface energy has a tendency to decrease and is realized in the form of agglomeration, and the agglomerated nano particles may form micron-sized agglomerates, thereby losing the function of nano particles in facilitating sintering. And because the high specific surface area of the nano silver or copper can enable the surface of the nano silver or copper to adsorb some organic matters more easily, the organic matter coating layers are not easy to remove in the sintering process, so that the diffusion of atoms is hindered, and the sintering interconnection among particles is inhibited. And a large number of scientific researchers' work shows that the sintering performance of the submicron-sized nano particles in all the particle sizes is the best, and because the submicron-sized nano particles have both small-size effect and quite high specific surface area, the specific surface area of the order of magnitude can not adsorb a large amount of surface organic matters, thereby really achieving the balance between the two.
A large number of scientific research results show that the sintering performance of the flaky nano silver is superior to that of the granular nano silver because the flaky silver realizes the contact between surfaces in the sintering process and the channel for atomic diffusion is larger. The corresponding granular silver particles realize the contact between points, and the diffusion channel is smaller. In addition to the effect of the metal nanofiller on the sintering properties of the solder paste, the additive of the solder paste is also a very important influencing factor, for example, a metal organic source can be added into the solder paste system, and metal atoms are generated by in-situ decomposition of the metal organic source, so that the interconnection between particles is realized, and the purpose of sintering is achieved.
Disclosure of Invention
In view of the defects in the prior art, the invention provides a solder paste, a preparation method and application thereof, and the sintering aid is realized by combining flaky nano particles as filling and metal-organic (MO) source addition, so as to solve the problems of high sintering temperature and low shear strength of the existing nano silver or copper solder paste.
To achieve the above object, a first aspect of the present invention provides a solder paste including nano-silver flakes, a metal-organic (MO) source, and an organic solvent carrier.
In the technical scheme of the invention, the flaky nano silver is triangular flaky nano silver and/or hexagonal flaky nano silver, preferably, the particle size of the flaky nano silver is 100 nm-700 nm, and the thickness of the flaky nano silver is 20 nm-40 nm.
In the technical scheme of the invention, the organic solvent carrier is selected from any one or a mixture of more than two of ethylene glycol, glycerol, diethylene glycol, triethylene glycol, alpha-terpineol, beta-terpineol, gamma-terpineol and delta-terpineol.
In the technical scheme of the invention, the mass ratio of the flaky nano silver, the metal organic source and the organic solvent carrier is (2-10): 1 to 5:1.
in the technical scheme of the invention, the metal organic source is a silver organic source, a copper organic source or a copper-silver mixed organic source.
In the technical scheme of the invention, the copper organic source is obtained by electromagnetically stirring at room temperature for 30min according to the molar ratio of a copper precursor to an amine ligand of 1:4;
the silver organic source is obtained by electromagnetically stirring at room temperature for 30min according to the molar ratio of the silver precursor to the amine ligand of 1:4;
the copper-silver mixed organic source is formed by mixing a silver organic source and a copper organic source according to the mass ratio of 10-1:1.
In the technical solution of the present invention, the copper precursor of the copper organic source is selected from any one of copper formate, copper acetate, copper lactate, copper hydroxide and copper nitrate, and more preferably selected from copper formate or copper hydroxide.
In the technical scheme of the invention, the silver precursor of the silver organic source is selected from one of silver nitrate, silver acetate, silver oxalate, silver lactate, silver citrate and silver carbonate, and more preferably selected from silver oxalate or silver acetate.
In the technical scheme of the invention, the amine ligand for complexing the metal organic source and the precursor of the corresponding metal organic source is selected from monoamine, diamine or alcohol amine, diisobutylamine, di-N-hexylamine cyclobutylamine, N-ethylpropylamine, (R) - (-) -1-amino-2-propanol, 2-amino-2-methyl-1-propanol, (S) - (+) -1-amino-2-propanol, ethylenediamine and propylenediamine, and more preferably is selected from one of ethylenediamine, diisobutylamine and 2-amino-2-methyl-1-propanol.
The invention also provides an application of the soldering paste in an electronic device package interconnection structure, wherein the electronic device package interconnection structure comprises a first mother sheet, a second mother sheet and a connecting layer for connecting the first mother sheet and the second mother sheet, and the connecting layer is a soldering paste coating formed by sintering the soldering paste through a sintering process of heating and pressing.
In the technical scheme of the invention, in the sintering process, the heating temperature is 130-300 ℃, and the pressing pressure is 1-20 MPa.
Compared with the prior art, the invention has the following beneficial effects:
the soldering paste provided by the invention comprises the flaky nano silver, the metal organic source and the organic solvent carrier, wherein the flaky nano silver, the metal organic source and the organic solvent carrier are mixed with each other to obtain the soldering paste, the sintering connection temperature of the soldering paste is 130-300 ℃, the melting point of the flaky nano silver is far lower than that of the blocky silver (961.8 ℃), the soldering paste can be well applied to the field of electronic packaging of low-temperature welding high-temperature service, the combination degree of a connection interface of a connection layer formed by sintering the soldering paste is good, uniform and compact, the shearing strength can reach over 51MPa at 150 ℃, the shearing strength is very high, and the soldering paste can be well applied to the packaging interconnection of electronic devices.
The preparation method of the soldering paste has the advantages of simple process flow and easy realization of process conditions, and is beneficial to large-scale industrial application.
Drawings
FIG. 1 is a schematic structural diagram of a package interconnect structure in an embodiment of the invention;
FIG. 2 is an SEM image of the flaky nano silver prepared by the invention;
FIG. 3 is a pictorial representation of an organic source of copper produced in accordance with an embodiment of the present invention;
FIG. 4 is a pictorial representation of an organic source of silver produced in accordance with an embodiment of the present invention;
FIG. 5 is an SEM photograph of a shear fracture plane of a connection layer in example 2 of the present invention;
FIG. 6 is an SEM photograph of a shear fracture surface of a connection layer in example 3 of the present invention;
reference numerals: 10-a first master; 20-a second master; 30-coating of solder paste.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
The soldering paste provided by the embodiment of the invention comprises the flaky nano silver, the metal organic source and the organic solvent carrier, wherein the flaky nano silver, the metal organic source and the organic solvent carrier are mixed with each other to obtain the soldering paste, the sintering connection temperature of the soldering paste is 130-300 ℃, the melting point of the flaky nano silver is far lower than that of the massive silver (961.8 ℃), the soldering paste can be well applied to the field of electronic packaging of low-temperature welding high-temperature service, the combination degree of a connection interface of a connection layer formed by sintering the soldering paste is good, uniform and compact, the shearing strength can reach over 51MPa at 150 ℃, the shearing strength is very high, and the soldering paste can be well applied to the packaging interconnection of electronic devices.
The preparation method of the nano-silver soldering paste provided by the embodiment of the invention has the advantages of simple process flow and easy realization of process conditions, and is beneficial to large-scale industrial application.
The flake nano silver involved in the following examples is prepared by the following steps of preparing silver nitrate and polyvinylpyrrolidone in a molar ratio of 5:4 in N, N-dimethylformamide solution at 180 ℃ for 4 hours.
Fig. 2 is an SEM image of the prepared flaky nano silver, and as shown in fig. 2, the prepared flaky nano silver includes triangular flaky nano silver and hexagonal flaky nano silver. The particle size range of the flaky nano silver is 100 nm-700 nm, and the thickness is 20 nm-40 nm.
Fig. 3 is a physical representation of the resulting copper organic source, wherein the copper organic source in fig. 3 is, in order from (a) to (d), copper hydroxide and ethylenediamine, copper hydroxide and diisobutylamine, copper formate and ethylenediamine, copper formate and 2-amino-2-methyl-1-propanol at a copper precursor to amine ligand molar ratio of 1: and 4, electromagnetically stirring for 30min at room temperature to obtain the product.
Fig. 4 is a physical diagram of the prepared silver organic source, wherein the silver organic source in fig. 4 is silver oxalate and ethylenediamine, silver oxalate and 2-amino-2-methyl-1-propanol, silver acetate and ethylenediamine, and silver acetate and 2-amino-2-methyl-1-propanol in a molar ratio of silver precursor to amine ligand of 1: and 4, electromagnetically stirring for 30min at room temperature to obtain the product.
Example 1
Mixing the flaky nano silver and copper organic source with ethylene glycol according to a mass ratio of 6.
Wherein the copper organic source is prepared by mixing copper hydroxide and ethylenediamine according to a molar ratio of 1: and electromagnetically stirring the mixture for 30min at room temperature of 4 ℃ to obtain the compound.
The prepared soldering paste is applied to a packaging interconnection structure of an electronic device. Specifically, as shown in fig. 1, the first master 10 and the second master 20 in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master slice and the second master slice) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the solder paste prepared in this embodiment is uniformly coated on the connecting surface of the DBC substrate and then stacked to obtain a "sandwich" structure of DBC substrate/solder paste coating/DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is subjected to low-temperature sintering and soldering to form the solder paste coating 30 at a pressure of 15MPa and a connection temperature of 130 ℃, the pressure holding time is 20min, the solder paste coating 30 is sintered to form a connection layer, and after cooling, the package interconnection structure shown in fig. 1 is obtained.
After testing, the shear force of the connection layer formed by sintering the solder paste of this example was measured to be 13.72MPa after cooling (wherein, 5 test samples were prepared according to this example, and the test data was taken as the average value of 5 test samples).
It should be noted that the specific examples of the shear fracture test performed on the connection layer are as follows: and (3) fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and reading from the shear force tester to obtain a corresponding shear force when the sample is fractured.
Example 2
Mixing the flaky nano silver, the silver organic source and the beta-terpineol according to a mass ratio of 10.
Wherein the silver organic source is silver acetate and 2-amino-2-methyl-1-propanol according to a molar ratio of 1: and 4, electromagnetically stirring for 30min at room temperature.
The solder paste prepared above is applied to package interconnection of electronic devices. Specifically, as shown in fig. 1, the first master and the second master in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master plate and the second master plate) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the solder paste prepared in this embodiment is uniformly coated on the connecting surface of the DBC substrate and then stacked to obtain a "sandwich" structure of DBC substrate/solder paste coating/DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is subjected to low-temperature sintering and soldering at a pressure of 5MPa and a connection temperature of 200 ℃ to form a solder paste coating 30, the pressure holding time is 20min, the solder paste coating 30 is sintered to form a connection layer, and after cooling, the package interconnection structure shown in fig. 1 is obtained.
After testing, the shear force of the connection layer formed by sintering the solder paste of this example after cooling was 47.82MPa (wherein 5 test samples were prepared according to this example and the test data was the average of the 5 test samples).
It should be noted that the specific examples of the shear fracture test performed on the connection layer are as follows: fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 microns per second to perform a shear fracture test, and reading from the shear force tester to obtain corresponding shear force when the sample is fractured.
Example 3
Mixing the flaky nano-silver and copper-silver mixed organic source with an organic solvent (ethylene glycol + alpha-terpineol) according to a mass ratio of 5.
Wherein the silver organic source is silver acetate and 2-amino-2-methyl-1-propanol according to a molar ratio of 1: the product was stirred magnetically at room temperature for 30 min. The copper organic source is copper formate and 2-amino-2-methyl-1-propanol with a molar ratio of 1: the product was stirred magnetically at room temperature for 30 min. The copper-silver mixed organic source is formed by mixing a silver organic source and a copper organic source according to the mass ratio of 1:1.
The solder paste prepared above is applied to package interconnection of electronic devices. Specifically, as shown in fig. 1, the first master and the second master in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master slice and the second master slice) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the solder paste prepared in this embodiment is uniformly coated on the connecting surface of the DBC substrate and then stacked to obtain a "sandwich" structure of DBC substrate/solder paste coating/DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is sintered to form the solder paste coating 30 by low-temperature sintering and soldering at a pressure of 10MPa and a bonding temperature of 150 ℃, the pressure holding time is 20min, and the solder paste coating 30 is sintered to form the bonding layer. After cooling, the package interconnect structure as shown in fig. 1 is obtained.
After testing, the shear force of the connection layer formed by sintering the solder paste of this example was measured to be 51.26MPa after cooling (wherein, 5 test samples were prepared according to this example, and the test data was taken as the average value of 5 test samples).
It should be noted that the specific examples of the shear fracture test performed on the connection layer are as follows: fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 microns per second to perform a shear fracture test, and reading from the shear force tester to obtain corresponding shear force when the sample is fractured.
Example 4
Mixing the flaky nano silver and copper silver mixed organic source with an organic solvent (glycerol + beta-terpineol) according to a mass ratio of 8.
Complexing the copper-silver mixed organic source with the precursor of the copper-silver mixed organic source
Wherein the silver organic source is silver oxalate and 2-amino-2-methyl-1-propanol according to a molar ratio of 1: the product was stirred magnetically at room temperature for 30 min. The copper organic source is copper hydroxide and diisobutylamine with the molar ratio of 1: the product was stirred magnetically at room temperature for 30 min. The copper-silver mixed organic source is formed by mixing a silver organic source and a copper organic source according to the mass ratio of 3:2.
The solder paste prepared above is applied to package interconnection of electronic devices. Specifically, as shown in fig. 1, the first master and the second master in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master plate and the second master plate) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the soldering paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked to obtain a sandwich structure of the DBC substrate/the soldering paste coating/the DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is sintered and soldered at a low temperature under a pressure of 1MPa and a connection temperature of 250 ℃ to form a solder paste coating 30, the pressure holding time is 20min, the solder paste coating is sintered to form a connection layer, and after cooling, the package interconnection structure shown in fig. 1 is obtained.
After testing, the shear force of the bonding layer formed by sintering the solder paste of this example was measured to be 32.18MPa after cooling (wherein, 5 test samples were prepared according to this example, and the test data was taken as the average value of the 5 test samples).
It should be noted that the specific examples of the shear fracture test performed on the connection layer are as follows: fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 microns per second to perform a shear fracture test, and reading from the shear force tester to obtain corresponding shear force when the sample is fractured.
Example 5
Mixing the flaky nano silver, the silver organic source and an organic solvent (diethylene glycol + gamma-terpineol) according to a mass ratio of 7.
Wherein the silver organic source is silver acetate and ethylenediamine according to a molar ratio of 1:4 product stirred magnetically at room temperature for 30 min. The copper organic source is copper formate and ethylenediamine with the molar ratio of 1: the product was stirred magnetically at room temperature for 30 min. The copper-silver mixed organic source is formed by mixing a silver organic source and a copper organic source according to the mass ratio of 3:1.
The solder paste prepared above is applied to package interconnection of electronic devices. Specifically, as shown in fig. 1, the first master and the second master in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master plate and the second master plate) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the solder paste prepared in this embodiment is uniformly coated on the connecting surface of the DBC substrate and then stacked to obtain a "sandwich" structure of DBC substrate/solder paste coating/DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is sintered and soldered at a low temperature under a pressure of 20MPa and a connection temperature of 130 ℃ to form a solder paste coating 30, the pressure holding time is 20min, the solder paste coating 30 is sintered to form a connection layer, and after cooling, the package interconnection structure shown in fig. 1 is obtained.
After testing, the shear force of the connection layer formed by sintering the solder paste of this example after cooling was 23.49MPa (wherein 5 test samples were prepared according to this example and the test data was the average of the 5 test samples).
It should be noted that the specific examples of the shear fracture test performed on the connection layer are as follows: fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 microns per second to perform a shear fracture test, and reading from the shear force tester to obtain corresponding shear force when the sample is fractured.
Example 6
Mixing the flaky nano-silver and copper-silver mixed organic source with an organic solvent (triethylene glycol + delta-terpineol) according to a mass ratio of 2.
Wherein the silver organic source is silver oxalate and 2-amino-2-methyl-1-propanol according to a molar ratio of 1:4 product stirred magnetically at room temperature for 30 min. The copper organic source is copper hydroxide and ethylenediamine with the molar ratio of 1:4 product stirred magnetically at room temperature for 30 min. The copper-silver mixed organic source is formed by mixing a silver organic source and a copper organic source according to the mass ratio of 9:1.
The solder paste prepared above is applied to package interconnection of electronic devices. Specifically, as shown in fig. 1, the first master and the second master in the package interconnect structure are both selected to be DBC substrates.
First, the master is processed: and ultrasonically washing the DBC substrate (the first master plate and the second master plate) in ethanol for 3min to remove impurities on the surface of the DBC substrate, and airing.
Then, the solder paste prepared in this embodiment is uniformly coated on the connecting surface of the DBC substrate and then stacked to obtain a "sandwich" structure of DBC substrate/solder paste coating/DBC substrate.
Then, the above stacked structure of DBC substrate/solder paste coating/DBC substrate is subjected to low-temperature sintering and soldering at a pressure of 10MPa and a connection temperature of 250 ℃ to form a solder paste coating 30, the pressure holding time is 20min, and the solder paste coating 30 is sintered to form a connection layer. After cooling, the package interconnect structure as shown in fig. 1 is obtained.
After testing, the shear force of the bonding layer formed by sintering the solder paste of this example was measured to be 73.64MPa after cooling (wherein, 5 test samples were prepared according to this example, and the test data was an average value of 5 test samples).
It should be noted that the performing the shear fracture test on the connection layer specifically includes: and (3) fixing the sample on a fixing clamp of a shear force tester, controlling the tester to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and reading from the shear force tester to obtain a corresponding shear force when the sample is fractured.
FIG. 5 is an SEM of the shear fracture plane of the tie layer of example 2. FIG. 6 is an SEM of the shear fracture plane of the tie layer of example 3. It can be seen from fig. 5 that the whole solder paste is sintered into a whole and the fracture point has a significant stretching phenomenon, which proves that the joint strength of the sintered solder paste and the substrate is very large. As can be seen from fig. 6, although the connection temperature of the low temperature sintering welding is reduced to 150 ℃, the sintering pressure is increased to 10MPa, therefore, the micro-morphology of the fracture surface shows that the voids are obviously less than the fracture surface of fig. 5 under the condition of 5MPa of sintering pressure, so that the compactness after sintering is higher in example 3, the tensile fracture phenomenon is more obvious, and the shear strength can reach more than 50 MPa.
The above-mentioned embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above-mentioned embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and they are intended to be included in the scope of the present invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (11)
1. A soldering paste is characterized by comprising flaky nano silver, a metal organic source and an organic solvent carrier;
the organic solvent carrier is selected from one or a mixture of more than two of ethylene glycol, glycerol, diethylene glycol, triethylene glycol, alpha-terpineol, beta-terpineol, gamma-terpineol and delta-terpineol;
the metal organic source is a silver organic source or a copper-silver mixed organic source;
the particle size of the flaky nano silver ranges from 100nm to 700nm, and the thickness of the flaky nano silver ranges from 20nm to 40nm;
the mass ratio of the flaky nano silver, the metal organic source and the organic solvent carrier is 2 to 10: 1-5: 1.
2. the solder paste according to claim 1, wherein the flaky nano silver is triangular flaky nano silver and/or hexagonal flaky nano silver.
3. The solder paste according to claim 1, wherein the copper-silver mixed organic source is a mixture of a silver organic source and a copper organic source in a mass ratio of 10;
the copper organic source is obtained by electromagnetically stirring at room temperature for 30min according to the molar ratio of the copper precursor to the amine ligand of 1:4;
the silver organic source is obtained by electromagnetically stirring the silver precursor and the amine ligand for 30min at room temperature according to the molar ratio of 1:4.
4. A solder paste according to claim 3, wherein the copper precursor of the copper organic source is selected from any one of copper formate, copper acetate, copper lactate, copper hydroxide and copper nitrate.
5. A solder paste according to claim 4, wherein the copper precursor of the copper organic source is copper formate or copper hydroxide.
6. A solder paste according to claim 3, wherein the silver precursor of the silver organic source is selected from one of silver nitrate, silver acetate, silver oxalate, silver lactate, silver citrate and silver carbonate.
7. A solder paste according to claim 6, wherein the silver precursor of the silver organic source is silver oxalate or silver acetate.
8. A solder paste according to claim 3, wherein the amine ligand complexing the metal-organic source with the corresponding precursor of the metal-organic source is selected from one of monoamine, diamine, alcohol amine, diisobutylamine, di-N-hexylamine cyclobutylamine, N-ethylpropylamine, (R) - (-) -1-amino-2-propanol, 2-amino-2-methyl-1-propanol, (S) - (+) -1-amino-2-propanol, ethylenediamine and propylenediamine.
9. A solder paste according to claim 8, wherein the amine ligand complexing the metal-organic source with the precursor of the corresponding metal-organic source is one of ethylenediamine, diisobutylamine, 2-amino-2-methyl-1-propanol.
10. Use of the solder paste according to any one of claims 1 to 9 in an electronic device package interconnect structure comprising a first master (10), a second master (20) and a connection layer for connecting the first master (10) and the second master (20), characterized in that the connection layer is a solder paste coating (30) formed by sintering the solder paste according to any one of claims 1 to 9 by a sintering process of heating and applying pressure.
11. The application of the ceramic material as claimed in claim 10, wherein in the sintering process, the heating temperature is 130 ℃ to 300 ℃, and the pressing pressure is 1MPa to 20MPa.
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| JP5239191B2 (en) * | 2006-10-31 | 2013-07-17 | 戸田工業株式会社 | Silver fine particles and method for producing the same |
| JP6628351B2 (en) * | 2015-07-24 | 2020-01-08 | 国立大学法人大阪大学 | Silver particle production method |
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| CN108098191B (en) * | 2017-12-17 | 2020-02-14 | 华中科技大学 | Preparation method of copper nanoparticle soldering paste and product thereof |
| CN108102579B (en) * | 2017-12-26 | 2020-04-21 | 昆明贵金属研究所 | Preparation method and application of high-thermal-conductivity and electric-conductivity adhesive |
| CN109317859B (en) * | 2018-11-05 | 2021-05-07 | 复旦大学 | Nano copper soldering paste, preparation method thereof and copper-copper bonding method |
| CN111843287A (en) * | 2020-07-27 | 2020-10-30 | 中国科学院深圳先进技术研究院 | Nano-silver soldering paste and preparation method and application thereof |
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