CN112649991A - Quantum dot color film and preparation method and application thereof - Google Patents
Quantum dot color film and preparation method and application thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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Abstract
The invention provides a quantum dot color film and a preparation method and application thereof, wherein the quantum dot color film comprises a transparent base material, a transparent conducting layer, a circuit and a quantum dot layer which are sequentially arranged from bottom to top; the quantum dot color film is prepared by electrodepositing the quantum dot luminescent material with charges on the substrate, the preparation method has simple process, convenient operation and low cost, and the prepared quantum dot color film has the advantages of high luminous efficiency, high display resolution and the like; the quantum dot color film is applied to a display device, so that the light passing rate and the display effect can be improved, the overall power consumption of the device is reduced, and the quantum dot color film is suitable for batch production and application.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot color film and a preparation method and application thereof.
Background
With the continuous progress of information technology and the continuous improvement of living standard, the requirements of people on the display are gradually increased, and the display is pushed to develop towards the trend of lighter, thinner, lower energy consumption, lower cost and better image quality. Because electrons and holes of a Quantum Dot (QD) material are limited by quanta, a continuous energy band structure is changed into a discrete energy level structure, so that the Quantum Dot has the advantages of very narrow light-emitting spectrum (20-30 nm), high chromaticity purity and wide display color gamut; and when the quantum dot material passes through the color filter, the light absorption loss is small, and low-power-consumption display can be realized. Therefore, it is an effective choice for manufacturers of large displays to use light-emitting quantum dot materials in displays to improve the display effect of display panels.
The quantum dot color film technology is a color conversion film prepared by dispersing a quantum dot material in a photoresist instead of a traditional pigment, and is different from the traditional color filter in the function of shielding other light colors, and a quantum dot color film is in an absorption excitation mode. By combining the light-emitting characteristics of wide excitation, narrow emission and high color purity of the quantum dots, the quantum dot color film is used for replacing the traditional color filter of the LCD panel, so that the brightness can be effectively improved, and the color gamut range can be effectively widened.
At present, the preparation method of the quantum dot color film is generally realized by a printing or photoetching process. CN105353555A discloses a method for manufacturing a quantum dot color film substrate, in which red and green quantum dot materials are respectively blended into red and green quantum dot inks, and the red and green quantum dot inks are formed by inkjet printing to obtain a color filter layer, which is applied to a display, can improve the brightness and color saturation of the display, and has a very wide application prospect. Although the printing process has low manufacturing cost, the precision is limited, and the preparation of the quantum dot color film for the high-resolution display screen is difficult to realize. CN109471332A discloses a patterned quantum dot color film and a method for manufacturing the same, where the quantum dot color film includes a transparent substrate, an organic color photoresist layer and a quantum dot photoresist layer, and the patterning of the quantum dot color film is realized by depositing the color quantum dot photoresist layer on the organic photoresist layer through a photolithography process or an inkjet printing process. CN105242442A discloses a method for preparing a quantum dot color film, which comprises the steps of forming a blue sub-pixel portion of a quantum dot color film by a photolithography process, performing hydrophobic treatment on a photoresist layer formed by a transparent organic photoresist material, coating a green quantum dot cured adhesive and a red quantum dot photoresist on corresponding regions in sequence by virtue of hydrophobic characteristics, obtaining a green quantum dot cured adhesive layer and a red quantum dot photoresist layer thereon in sequence, and etching a part of the red quantum dot photoresist layer by the photolithography process to obtain the green sub-pixel portion and the red sub-pixel portion of the quantum dot color film. Compared with the traditional manufacturing method of the quantum dot color film, the method at least reduces one-time photoetching process, greatly simplifies the manufacturing process, reduces the cost, improves the production efficiency, and only needs to develop one quantum dot photoresist, thereby reducing the development difficulty and cost. Although the two methods for preparing the quantum dot color film by the photoresist method can realize fine patterns, the process is complex, and the quantum dot material is dispersed in the photoresist with a plurality of additives, so that the surface chemical environment of the quantum dot material is complex, and the luminous efficiency of the quantum dot material is greatly influenced.
Therefore, the development of a quantum dot color film with high resolution, high light conversion efficiency, high light transmittance, simple preparation process and low cost is an urgent problem to be solved at present.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a quantum dot color film and a preparation method and application thereof, wherein the quantum dot color film comprises a transparent base material, a transparent conducting layer, a circuit and a quantum dot layer which are sequentially arranged from bottom to top, and has the advantages of high resolution, high luminous efficiency and high light transmittance, the preparation method is simple, the cost is low, and batch production can be realized.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a quantum dot color film, which includes a transparent substrate, a transparent conductive layer, a circuit, and a quantum dot layer, which are sequentially disposed from bottom to top.
Exemplarily, a schematic cross-sectional structure of a quantum dot color film provided by the present invention is shown in fig. 1, where 1 represents a transparent substrate, 2 represents a transparent conductive layer, 3 represents a quantum dot layer, and 4 represents a circuit located between the transparent conductive layer 2 and the quantum dot layer 3; compared with the prior art that the quantum dot material is dispersed in the photoresist and then is prepared on the substrate in the modes of photocuring or etching and the like, the quantum dot layer 3 is prepared by directly depositing the quantum dot material on the transparent conducting layer 2 by an electrodeposition method, and has high resolution and luminous efficiency; the shape of the transparent conducting layer 2 can be changed according to the arrangement requirement of the quantum dots to be deposited; the quantum dot color film can realize pixel-level quantum dot arrangement and has the advantages of high display resolution and high light conversion efficiency.
Preferably, the thickness of the quantum dot color film is 45-350 μm, such as 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm or 340 μm, and specific point values between the above point values are limited to space and for simplicity, and the invention does not exhaust the specific point values included in the range.
Preferably, the material of the transparent substrate comprises any one of polymethyl methacrylate, polystyrene, polycarbonate, styrene-acrylonitrile copolymer or styrene-methyl methacrylate copolymer or a combination of at least two of them.
Preferably, the transparent substrate has a light transmittance of 90% or more, such as 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99% or 100%, and specific values therebetween, limited to space and for the sake of brevity, are not exhaustive and do not include the specific values included in the ranges.
Preferably, the thickness of the transparent substrate is 12 to 65 μm, such as 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 28 μm, 32 μm, 36 μm, 40 μm, 44 μm, 48 μm, 52 μm, 56 μm, 60 μm or 64 μm, and specific points therebetween, limited to space and for the sake of brevity, the present invention is not exhaustive of the specific points included in the range.
Preferably, the material of the transparent conductive layer comprises a conductive metal oxide and/or a conductive polymer material;
preferably, the transparent conductive layer has a light transmittance of > 83%, such as 85%, 87%, 89%, 91%, 93%, 95%, 97%, 99%, or 100%, and specific values therebetween are not exhaustive for the invention and are included for brevity.
Preferably, the resistivity of the transparent conductive layer is less than 0.001 Ω · m, such as 0.0009 Ω · m, 0.0005 Ω · m or 0.00001 Ω · m, and specific values therebetween, limited to space and for the sake of brevity, are not exhaustive and the invention does not include the specific values included in the stated ranges.
Preferably, the transparent conductive layer has a thickness of 0.5 to 25 μm, such as 1 μm, 3 μm, 5 μm, 7 μm, 9 μm, 11 μm, 13 μm, 15 μm, 17 μm, 19 μm, 21 μm, or 23 μm, and specific values therebetween, which are not intended to be exhaustive for the invention and for the sake of brevity.
Preferably, the quantum dot layer has a thickness of 15 to 90 μm, such as 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, or 85 μm, and specific values therebetween, which are not intended to be limited by space and for the sake of brevity, the present invention is not exhaustive of the specific values included in the range.
Preferably, the quantum dot layer comprises a quantum dot material.
Preferably, the quantum dot material comprises a combination of red, green and blue quantum dot materials.
Preferably, the quantum dot material comprises a combination of red and green quantum dot materials.
The quantum dot material in the quantum dot layer has two kinds of conditions, and according to different requirements, the quantum dot material can comprise a combination of a red light quantum dot material, a green light quantum dot material and a blue light quantum dot material, or only comprises a combination of a red light quantum dot material and a green light quantum dot material.
Preferably, the red light quantum dot material comprises a quantum dot material which emits red light under excitation of blue light or ultraviolet light.
Preferably, the green light quantum dot material comprises a quantum dot material emitting green light under excitation of blue light or ultraviolet light.
Preferably, the blue light quantum dot material comprises a quantum dot material that emits blue light upon excitation by blue light.
Preferably, the red light quantum dot material, the green light quantum dot material and the blue light quantum dot material respectively and independently comprise AxMyEzAnd (3) system materials.
Wherein A is selected from any one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs.
M is selected from any one of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb.
E is selected from any one of S, As, Se, O, Cl, Br or I.
x is 0.3 to 2, such as 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, or 1.9, and the specific values therebetween are not exhaustive for the invention, limited to the space and for brevity.
y is 0.5 to 3, such as 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 1.9, 2.1, 2.3, 2.5, 2.7, or 2.9, and the specific values therebetween are not exhaustive and are included for brevity.
z is 0 to 4, such as 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 1.9, 2.1, 2.3, 2.5, 2.7, 2.9, 3.1, 3.3, 3.5, 3.7, or 3.9, and the specific values between the above values are not exhaustive of the invention for reasons of brevity and clarity.
Preferably, the quantum dot color film comprises a transparent substrate, a transparent conducting layer, a circuit and a quantum dot layer which are arranged from bottom to top in sequence;
the material of the transparent base material comprises any one or combination of at least two of polymethyl methacrylate, polystyrene, polycarbonate, styrene-acrylonitrile copolymer or styrene-methyl methacrylate copolymer, the light transmittance of the transparent base material is more than or equal to 90%, and the thickness of the transparent base material is 12-65 μm;
the material of the transparent conducting layer comprises a conducting metal oxide and/or a conducting polymer material, the light transmittance of the transparent conducting layer is more than 83%, the resistivity of the transparent conducting layer is less than 0.001 omega-m, and the thickness of the transparent conducting layer is 0.5-25 mu m;
the quantum dot layer is made of a combination of red light quantum dot materials, green light quantum dot materials and blue light quantum dot materials, and the thickness of the quantum dot layer is 15-90 mu m.
In a second aspect, the present invention provides a method for preparing a quantum dot color film according to the first aspect, where the method includes the following steps:
(1) preparing a transparent conducting layer on a transparent base material, coating an anti-etching material on the transparent conducting layer according to pixel point arrangement, etching the transparent conducting layer coated with the anti-etching material until the transparent base material is leaked out of a corresponding position, stripping and cleaning the residual anti-etching material, and mounting a circuit on the transparent conducting layer to obtain a substrate;
(2) and (2) preparing a quantum dot layer on the substrate obtained in the step (1) by an electrodeposition method to obtain the quantum dot color film.
The preparation method of the quantum dot color film provided by the invention comprises the following steps of firstly preparing a substrate, wherein the preparation steps of the substrate are as shown in fig. 2 (dot deposition) or fig. 3 (strip deposition), wherein 1 represents a transparent substrate, 2 represents a transparent conductive layer, and 5 represents an etching-resistant material coating layer; preparing a transparent conducting layer 2 on a transparent substrate 1, coating an anti-etching material on the transparent conducting layer 2 according to pixel point arrangement to form an anti-etching material coating layer 5, etching the transparent conducting layer 2 coated with the anti-etching material until a corresponding position leaks out of the transparent substrate 1, stripping and cleaning the residual anti-etching material coating layer 5, plating a layer of metal on the part of the transparent conducting layer 2 where the quantum dot material is to be deposited in a sputtering or evaporation mode, and etching the metal again to form a required circuit to obtain the substrate; finally, a quantum dot layer is prepared on the substrate prepared by the method according to the requirement by adopting an electrodeposition method, exemplarily, the schematic diagram of the electrodeposition process is shown in fig. 4, 6 represents the substrate, 7 represents the reaction electrode, and 8 represents the charged quantum dot material, so as to obtain the quantum dot color film.
Preferably, the method for preparing the transparent conductive layer in step (1) includes any one of magnetron sputtering, vacuum evaporation or sol-gel spin coating or a combination of at least two of the same.
Preferably, the etching of step (1) comprises physical etching and/or chemical etching.
Preferably, the etching-resistant material of step (1) is coated at a thickness of 200-15000 nm, such as 500nm, 1000nm, 1500nm, 2500nm, 3500nm, 5500nm, 6500nm, 7500nm, 8500nm, 9500nm, 10500nm, 11500nm, 12500nm, 13500nm or 14500nm, and specific values therebetween are not limited by space and for the sake of brevity, and the invention is not exhaustive of the specific values included in the range.
Preferably, the washing in step (1) includes any one of organic solution washing, water washing or plasma washing or a combination of at least two of them.
Preferably, the method for preparing the quantum dot deposition layer by the electrodeposition method in the step (2) comprises a method A and a method B;
the method A specifically comprises the following steps:
(A1) reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution;
(A2) and (2) respectively placing the substrate obtained in the step (1) in the red light quantum dot deposition solution and the green light quantum dot deposition solution with charges obtained in the step (A1) for electrodeposition to obtain the quantum dot layer.
The method B specifically comprises the following steps:
(B1) reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution, a charged green light quantum dot deposition solution and a charged blue light quantum electrodeposition solution;
(B2) and (3) respectively placing the substrate obtained in the step (1) in the charged red light quantum dot deposition solution, the charged green light quantum dot deposition solution and the charged blue light quantum dot deposition solution obtained in the step (B1) for electrodeposition to obtain the quantum dot layer.
The preparation method of the quantum dot color film provided by the invention comprises the steps of carrying out bonding reaction on a quantum dot material and a ligand material, preparing a charged red light quantum dot deposition solution according to requirements, preparing a charged green light quantum electrodeposition solution and a charged blue light quantum dot deposition solution, and preparing for subsequent electrodeposition.
Preferably, the molar ratio of the quantum dot material to the ligand material in the steps (a1) and (B1) is 1: (1-100), for example, 1:5, 1:10, 1:15, 1:20, 1:25, 1:30, 1:35, 1:40, 1:45, 1:50, 1:55, 1:60, 1:65, 1:70, 1:75, 1:80, 1:85, 1:90, 1:95, etc.
Preferably, the ligand material includes an organic salt type material.
Preferably, the ligand material comprises any one of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methylate or sodium ethoxide or a combination of at least two thereof.
Preferably, the reaction in step (A1) and step (B1) is carried out at a pH of 5-11 (e.g., 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, etc.).
Preferably, the reaction temperature in the steps (a1) and (B1) is 120 to 320 ℃, for example 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃, 180 ℃, 190 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, 260 ℃, 270 ℃, 280 ℃, 290 ℃, 300 ℃ or 310 ℃, and the specific values therebetween are not limited by space and for the sake of brevity, and the invention is not exhaustive.
Preferably, the reaction time of the step (a1) and the step (B1) is 0.5-90 min, such as 1min, 5min, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min, 60min, 65min, 70min, 75min, 80min or 85min, and the specific values therebetween are limited by space and for brevity, and the invention is not exhaustive of the specific values included in the range.
Preferably, the dc voltage for the electrodeposition in the steps (a1) and (B1) is 1-12V, such as 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V or 11V, and the specific values therebetween are limited to the space and for the sake of brevity, and the invention is not exhaustive.
Preferably, the current deposited in the steps (a1) and (B1) is 0.5 to 30mA, such as 1mA, 2mA, 4mA, 6mA, 8mA, 10mA, 12mA, 14mA, 16mA, 18mA, 20mA, 22mA, 24mA, 26mA or 28mA, and the specific values therebetween are not exhaustive, and for brevity and clarity, the invention is not intended to be limited to the specific values included in the range.
Preferably, the electrodeposition time in steps (a1) and (B1) is 1-30 min, such as 2min, 4min, 6min, 8min, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min or 26min, 28min, and the specific values therebetween are not exhaustive, and for brevity and conciseness, the invention is not limited to the specific values included in the range.
Preferably, the thickness of the electrodeposited layer in steps (a1) and (B1) is 15-90 μm, such as 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, or 85 μm, and the specific values therebetween are not exhaustive, and the invention is not limited to the specific values included in the range for brevity and conciseness.
Preferably, the electrodeposition of the steps (a1) and (B1) further comprises a step of surface spraying.
As a preferred technical scheme of the invention, the method also comprises a surface spraying step after the electro-deposition is finished, and a quantum dot color film with high luminous efficiency and high display resolution can be obtained after the surface spraying treatment; specifically, after a certain color light quantum dot material with charges is electrodeposited on a substrate, the substrate deposited with the certain color light quantum dot material with charges is taken out of a deposition solution to be sprayed, so that the quantum dot material deposited on the substrate is protected and prevented from being unstably attached, and the first color light quantum dot material with charges deposited on the substrate is prevented from falling off when a second color light quantum dot material with charges is electrodeposited.
Preferably, the sprayed material is an acrylate material.
As a preferred technical scheme, the preparation method specifically comprises the following steps:
(1) preparing a transparent conducting layer on a transparent base material, arranging and coating an anti-etching material with the thickness of 200-15000 nm on the transparent conducting layer according to pixel points, etching the transparent conducting layer coated with the anti-etching material until the transparent base material leaks from a corresponding position, stripping and cleaning the residual anti-etching material, and mounting a circuit on the transparent conducting layer to obtain a substrate;
(2) depositing a quantum dot layer on the substrate obtained in the step (2) by an electrodeposition method of the method A or the method B to obtain the quantum dot color film;
the method A specifically comprises the following steps: reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution; respectively placing the substrate obtained in the step (1) in a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution for electrodeposition for 1-30 min to obtain a quantum dot layer with the electrodeposition thickness of 15-90 mu m; the direct current voltage of the electrodeposition is 1-12V, and the current is 0.5-30 mA;
the method B specifically comprises the following steps: reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution, a charged green light quantum dot deposition solution and a charged blue light quantum electrodeposition solution; respectively placing the substrate obtained in the step (1) in the charged red light quantum dot deposition solution, the charged green light quantum dot deposition solution and the charged blue light quantum electrodeposition solution for electrodeposition for 1-30 min to obtain a quantum dot layer with the electrodeposition thickness of 15-90 mu m; the direct current voltage of the electrodeposition is 1-12V, and the current is 0.5-30 mA.
In a third aspect, the invention provides an application of the quantum dot color film as described in the first aspect in a display device or a lighting device.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a quantum dot color film which comprises a transparent base material, a transparent conducting layer, a circuit and a quantum dot light emitting layer which are sequentially arranged from bottom to top. The quantum dot color film is prepared by preparing a quantum dot material with charges and depositing the quantum dot material with the charges on a substrate in an electrodeposition mode, the whole preparation process is simple in process, convenient to operate and low in cost, the prepared quantum dot color film can realize pixel-level quantum dot arrangement, the light conversion efficiency of the quantum dot color film is 83-90%, the pixel density is 500-750 PPI, and the color gamut is 113-122%, compared with a quantum dot conversion layer provided in the prior art, the light conversion efficiency is improved by 28-210%, the pixel density is improved by 11-108%, and the color gamut is improved by 3-16%; the quantum dot color film has the advantages of high light conversion efficiency, high display resolution and the like, and when the quantum dot color film is applied to a display device, the light passing rate and the display effect can be improved, the overall power consumption of the device is reduced, and the application of batch industrial production is realized.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a quantum dot color film including red, green, and blue quantum dot layers according to the present invention;
FIG. 2 is a schematic diagram of a process for preparing a substrate to be deposited with a quantum dot layer;
FIG. 3 is a schematic diagram of a process for preparing a substrate to be deposited with a quantum dot layer in the form of a stripe;
FIG. 4 is a schematic view of an electrodeposition process;
fig. 5 is a schematic plane structure diagram of a quantum dot color film in embodiment 1;
fig. 6 is a schematic view of a plane structure of a quantum dot color film in embodiment 2.
Wherein, 1-transparent substrate, 2-transparent conducting layer, 3-quantum dot layer, 4-circuit located between transparent conducting layer 2 and quantum dot layer 3, 5 represents the coating layer of anti-etching material, 6-base plate, 7-reaction electrode, 8-charged quantum dot material, 9-red light quantum dot material; 10-green light quantum dot material, 11-blue light quantum dot material and 12-blue light pixel point area.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
A quantum dot color film, the schematic cross-sectional structure of which is shown in fig. 1, comprises a transparent substrate 1, a transparent conducting layer 2, a quantum dot layer 3 and a circuit 4 arranged between the transparent conducting layer 2 and the quantum dot layer 3, which are arranged in sequence from bottom to top; the schematic plan structure diagram is shown in fig. 5, and the quantum dot color film comprises a transparent substrate 1, a red light quantum dot material 9, a green light quantum dot material 10 and a blue light quantum dot material 11, wherein the three quantum dot materials are distributed on the quantum dot color film in a strip shape;
the specific preparation method of the quantum dot color film is as follows:
(1) preparation of charged quantum dot deposition solution: mixing an octadecylene solution of InP quantum dots with sodium acetate at 220 ℃, adjusting the pH value to 7, and reacting for 45min, wherein the molar concentration of the InP quantum dots in the octadecylene solution is 2.5mol/L, and the molar concentration of the sodium acetate in the octadecylene solution is 120 mol/L; reacting for 45min to obtain InP quantum dot deposition solution with charges; under the same condition, InP quantum dots are changed into CsPbBr3Quantum dots, repeating the above steps to obtain CsPbBr with charges3A quantum dot deposition solution; the InP quantum dots are changed into CdSe quantum dots, and the steps are repeated to obtain CdSe quantum dot deposition solution with charges;
(2) preparing a substrate: firstly, Sn doped In with the thickness of 12.5 mu m is prepared on silicate glass with the thickness of 40 mu m by a magnetron sputtering method2O3Transparent conductive layer of Sn doped In which has been cured2O3Is transparentCoating 750nm negative photoresist on the conductive layer according to the pixel point arrangement, so that the etching-resistant material covers the InP quantum dots to be deposited and CsPbBr3Regions of quantum dots and CdSe quantum dots; chemically etching the transparent conductive layer coated with the etching-resistant material until the inorganic glass leaks out of the corresponding position, and stripping and washing the residual etching-resistant material with water; finally, a circuit is arranged on the transparent conducting layer, so that the transparent conducting layer areas of all the quasi-deposited InP quantum dots are mutually connected, and all the quasi-deposited CsPbBr3The transparent conducting layer regions of the quantum dots are mutually connected, and all the transparent conducting layer regions to be deposited with the CdSe quantum dots are mutually connected to obtain the substrate;
(3) and (3) an electrodeposition process: placing the substrate obtained in the step (2) in the InP quantum dot deposition solution obtained in the step (1), adding a reaction electrode into the solution, and performing electrodeposition for 15min under the conditions that the direct-current voltage is 6V and the current is 15mA to obtain an InP quantum dot deposition substrate with charges, wherein the thickness of the deposition layer is 42 microns, and thus completing the electrodeposition; taking the substrate deposited with the InP quantum dots out of the solution, spraying the substrate deposited with the InP quantum dots with 2-methyl methacrylate), and respectively placing the substrate in the CsPbBr with charges obtained in the step (1)3And repeating the electrodeposition steps in the quantum dot deposition solution and the CdSe quantum dot deposition solution with charges to obtain the quantum dot color film.
Example 2
The structure of a quantum dot color film is different from that of the quantum dot color film in embodiment 1 in that a quantum dot layer only comprises a red light quantum dot material and a green light quantum dot material, and a blue light quantum dot region is replaced by a blue light pixel region, wherein the two quantum dot materials and the blue light pixel region are distributed on the quantum dot color film in a strip shape;
the preparation method comprises the following steps:
(1) preparation of charged quantum dot deposition solution: mixing an octadecylene solution of InP quantum dots with sodium acetate at 220 ℃, adjusting the pH value to 7, and reacting for 45min, wherein the molar concentration of the InP quantum dots in the octadecylene solution is 2.5mol/L, and the molar concentration of the sodium acetate in the octadecylene solution is 120 mol/L; reacting for 45min to obtain InP with chargesSub-dot deposition solution; under the same condition, InP quantum dots are changed into CsPbBr3Quantum dots, repeating the above steps to obtain CsPbBr with charges3A quantum dot deposition solution;
(2) preparing a substrate: firstly, Sn doped In with the thickness of 12.5 mu m is prepared on silicate glass with the thickness of 40 mu m by a magnetron sputtering method2O3Transparent conductive layer of Sn doped In which has been cured2O3Coating 750nm negative photoresist on the transparent conductive layer according to the pixel point arrangement, so that the etching-resistant material covers the InP quantum dots to be deposited and the CsPbBr3A region of quantum dots; chemically etching the transparent conductive layer coated with the etching-resistant material until the inorganic glass leaks out of the corresponding position, and stripping and washing the residual etching-resistant material with water; finally, a circuit is arranged on the transparent conducting layer, so that the transparent conducting layer areas of all the quasi-deposited InP quantum dots are mutually connected, and all the quasi-deposited CsPbBr3Mutually connecting transparent conducting layer regions of the quantum dots to obtain the substrate;
(3) and (3) an electrodeposition process: placing the substrate obtained in the step (2) in the InP quantum dot deposition solution obtained in the step (1), adding a reaction electrode into the solution, and performing electrodeposition for 15min under the conditions that the direct-current voltage is 6V and the current is 15mA to obtain an InP quantum dot deposition substrate with charges, wherein the thickness of the deposition layer is 42 microns, and thus completing the electrodeposition; taking the substrate deposited with the InP quantum dots out of the solution, spraying the substrate deposited with the InP quantum dots with 2-methyl methacrylate), and placing the substrate in the CsPbBr with charges obtained in the step (1)3And repeating the electrodeposition step in the quantum dot deposition solution to obtain the quantum dot color film.
Example 3
A schematic diagram of a plane structure of a quantum dot color film is shown in FIG. 6, and the quantum dot color film comprises a transparent substrate 1, a red light quantum dot material 9, a green light quantum dot material 10 and a blue light pixel area 12; the two quantum dot materials and the blue light pixel region are distributed in a dot shape on the quantum dot color film as shown in fig. 6; the specific preparation method is the same as that of example 2.
Example 4
A quantum dot color film, which has a structure different from that of embodiment 3 in that a quantum dot layer includes a red light quantum dot material, a green light quantum dot material, and a blue light quantum dot material; the three quantum dot materials are distributed on the quantum dot color film in a dot shape; the specific preparation method is the same as that of example 1.
Example 5
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from the example 1 only in InP quantum dots and CsPbBr in the step (1)3The molar concentrations of the quantum dots and the CdSe quantum dots are both 0.25mol/L, and the molar concentration of sodium acetate in the octadecene solution is 12 mol/L; the amounts of other components and experimental conditions were the same as in example 1, and the quantum color film was obtained.
Example 6
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from the example 1 only in InP quantum dots and CsPbBr in the step (1)3The molar concentrations of the quantum dots and the CdSe quantum dots are both 5mol/L, and the molar concentration of sodium acetate in the octadecene solution is 240 mol/L; the amounts of other components and experimental conditions were the same as in example 1, and the quantum color film was obtained.
Example 7
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from the example 1 only in that the molar concentration of the sodium acetate in the octadecene solution in the step (1) is 2.5 mol/L; the amounts of other components and experimental conditions were the same as in example 1, and the quantum dot color film was obtained.
Example 8
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from the example 1 only in that the molar concentration of sodium acetate in the octadecene solution in the step (1) is 250 mol/L; the amounts of other components and experimental conditions were the same as in example 1, and the quantum dot color film was obtained.
Example 9
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from that of the example 1 only in that the direct current voltage of the electrodeposition in the step (3) is 1V, the current is 0.5mA, the electrodeposition time is 30min, the thickness of the deposition layer is 90 μm, and the using amounts and experimental conditions of other components are the same as those of the example 1, so that the quantum dot color film is obtained.
Example 10
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from that of the example 1 only in that the direct current voltage of electrodeposition in the step (3) is 12V, the current is 30mA, the electrodeposition time is 1min, the thickness of the deposition layer is 15 μm, and the use amounts and experimental conditions of other components are the same as those of the example 1, so that the quantum dot color film is obtained.
Example 11
A quantum dot color film having the same structure as in embodiment 1; the preparation method is different from the example 1 only in InP quantum dots and CsPbBr in the step (1)3Quantum dots and CdSe quantum dots are respectively replaced by PbSe quantum dots, CdS quantum dots and ZnS quantum dots; the amounts of other components and experimental conditions were the same as in example 1, and the quantum dot color film was obtained.
Comparative example 1
The specific preparation method of the quantum dot color conversion layer is as follows:
(1) InP red light quantum dot glue with the concentration of 0.15mol/L and CsPbBr with the concentration of 0.50mol/L3Mixing the green light quantum glue and the CdSe blue light quantum glue with the concentration of 0.73mol/L to obtain mixed glue;
(3) coating the mixed glue obtained in the step (1) between two PET films through a coating machine to obtain a quantum dot layer;
(4) and (3) under ultraviolet illumination, carrying out packaging glue, curing and cutting on the quantum dot layer obtained in the step (2) to obtain the quantum dot color conversion layer.
Comparative example 2
A quantum dot optical film is prepared by the following steps:
(1) mixing ZnS red light quantum dots with acrylic packaging glue in a mass ratio of 1:446.2, mixing InP green light quantum dots with acrylic packaging glue in a mass ratio of 3.2:446.2, and mixing CsPbCl in a mass ratio of 5:446.23Mixing the blue light quantum dot material with acrylic acid packaging glue to respectively obtain red lightQuantum dot glue, green light quantum dot glue and blue light quantum dot glue;
(2) mixing the red light quantum dot glue, the green light quantum dot glue and the blue light quantum dot glue obtained in the step (1) to obtain mixed quantum dot glue, and adding silicon oxide into the mixed quantum dot glue to obtain mixed glue, wherein the mass percentage of the mixed quantum dot glue in the mixed glue is 1.5%;
(3) coating the mixed glue obtained in the step (2) on a substrate membrane, covering a layer of substrate membrane, controlling the thickness of a quantum dot layer by using a coating machine, packaging under the irradiation of ultraviolet light, and cutting to obtain the quantum dot optical membrane.
Comparative example 3
A quantum dot optical film is prepared by the following steps:
(1) mixing ZnS red light quantum dots with acrylic packaging glue in a mass ratio of 1:446.2, and mixing InP green light quantum dots with acrylic packaging glue in a mass ratio of 3.2:446.2 to respectively obtain red light quantum dot glue and green light quantum dot glue;
(2) mixing the red light quantum dot glue and the green light quantum dot glue obtained in the step (1) to obtain mixed quantum dot glue, and adding silicon oxide into the mixed quantum dot glue to obtain mixed glue, wherein the mass percentage of the mixed quantum dot glue in the mixed glue is 1.5%;
(3) coating the mixed glue obtained in the step (2) on a substrate membrane, covering a layer of substrate membrane, controlling the thickness of a quantum dot layer by using a coating machine, packaging under the irradiation of ultraviolet light, and cutting to obtain the quantum dot optical membrane.
Application examples 1 to 9
A display device is provided, and the quantum dot color film obtained in the embodiments 1, 4-11 is applied to the display device, and the specific preparation method is as follows:
the quantum dot color film prepared in the embodiments 1, 4 to 11 is installed on the ultraviolet light Micro-LED backlight source, then assembly and circuit conduction are performed, and under the excitation of the ultraviolet light Micro-LED backlight source, the quantum dot color film can emit red light, green light and blue light.
Application examples 10 and 11
A display device is specifically prepared by the following steps:
the quantum dot color film prepared in the embodiments 2 and 3 is installed on a blue light OLED backlight source, then assembly and circuit conduction are performed, and under the excitation of the blue light OLED backlight source, the quantum dot color film can emit red light, green light and blue light.
Comparative application examples 1 and 2
A display device, which uses the quantum dot color conversion layer obtained in the comparative example 1 and the quantum dot optical film obtained in the comparative example 2 as a light emitting device, has the same specific preparation method as the application example 1.
Comparative application example 3
A display device, the quantum dot optical film obtained in comparative example 3 is used as a light emitting device, and the specific preparation method is the same as in application example 10.
And (3) performance testing:
(1) light conversion efficiency: the light power of the sample emitted light after being excited by the backlight source/the light power of the sample emitted light by the backlight source is multiplied by 100 percent;
(2) pixel density (PPI): on a diagonal line of the display screen, the number of pixel points existing in each inch of length is the pixel density, and the numerical value corresponds to the resolution of the display screen;
(3) displaying the color gamut value: the area of a triangle formed by connecting the color coordinate points of the red, the green and the blue of the display screen is compared with the area of a standard NTSC triangle.
The performance test is carried out on the display devices obtained according to the test method and the application examples 1-11 and the comparative application examples 1-3, and the test results are shown in table 1:
TABLE 1
As can be seen from the data in table 1: the quantum dot color film provided by the invention has the advantages that the quantum dot material is deposited on the transparent conductive material by an electrodeposition method, so that the prepared quantum dot color film has high luminous efficiency and resolution and wide color gamut;
specifically, the light conversion efficiency of the display device obtained by applying examples 1 and 4-11 is 83-90%, the pixel density is 500-750 PPI, and the display color gamut is 113-122% NTSC, compared with the display device provided by comparing application examples 1 and 2, the light conversion efficiency is improved by 28-210%, the pixel density is improved by 11-108%, and the display color gamut is improved by 3-16%, so that the quantum dot color film with red, green and blue quantum dots provided by the invention is proved to have higher light conversion efficiency and display resolution when applied to the display device with ultraviolet light as a backlight source; the light conversion efficiency of the display devices obtained in application examples 2 and 3 is respectively 88% and 87%, the pixel density is 580PPI and 720PPI, and the display color gamut is 113% NTSC and 125% NTSC, compared with the display device provided in application example 3, the light conversion efficiency is improved by 148%, the pixel density is improved by 45-80%, and the display color gamut is improved by 4-16%.
The applicant states that the present invention describes a quantum dot color film and a manufacturing method and an applied process method thereof through the above embodiments, but the present invention is not limited to the above process steps, i.e. it does not mean that the present invention must rely on the above process steps to be implemented. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.
Claims (10)
1. The quantum dot color film is characterized by comprising a transparent base material, a transparent conducting layer, a circuit and a quantum dot layer which are sequentially arranged from bottom to top.
2. The quantum dot color film according to claim 1, wherein the thickness of the quantum dot color film is 45-350 μm;
preferably, the material of the transparent substrate comprises any one of polymethyl methacrylate, polystyrene, polycarbonate, styrene-acrylonitrile copolymer or styrene-methyl methacrylate copolymer or a combination of at least two of the above;
preferably, the light transmittance of the transparent substrate is more than or equal to 90 percent;
preferably, the thickness of the transparent substrate is 12-65 μm.
3. The quantum dot color film according to claim 1 or 2, wherein the material of the transparent conductive layer comprises a conductive metal oxide and/or a conductive polymer material;
preferably, the light transmittance of the transparent conductive layer is > 83%;
preferably, the resistivity of the transparent conductive layer is less than 0.001 Ω · m;
preferably, the thickness of the transparent conductive layer is 0.5-25 μm.
4. The quantum dot color film according to any one of claims 1 to 3, wherein the thickness of the quantum dot layer is 15 to 90 μm;
preferably, the quantum dot layer comprises a quantum dot material;
preferably, the quantum dot material comprises a combination of red, green and blue quantum dot materials;
preferably, the quantum dot material comprises a combination of red and green quantum dot materials;
preferably, the red light quantum dot material comprises a quantum dot material which emits red light under the excitation of blue light or ultraviolet light;
preferably, the green light quantum dot material comprises a quantum dot material which emits green light under the excitation of blue light or ultraviolet light;
preferably, the blue light quantum dot material comprises a quantum dot material emitting blue light under excitation of blue light;
preferably, the red light quantum dot material, the green light quantum dot material and the blue light quantum dot material respectively and independently comprise AxMyEzA system material;
wherein A is selected from any one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs;
m is selected from any one of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb;
e is selected from any one of S, As, Se, O, Cl, Br or I;
x is 0.3-2;
y is 0.5 to 3;
z is 0 to 4.
5. The quantum dot color film according to any one of claims 1 to 4, wherein the quantum dot color film comprises a transparent substrate, a transparent conductive layer, a circuit and a quantum dot layer which are arranged from bottom to top in sequence;
the material of the transparent base material comprises any one or combination of at least two of polymethyl methacrylate, polystyrene, polycarbonate, styrene-acrylonitrile copolymer or styrene-methyl methacrylate copolymer, the light transmittance of the transparent base material is more than or equal to 90%, and the thickness of the transparent base material is 12-65 μm;
the material of the transparent conducting layer comprises a conducting metal oxide and/or a conducting polymer material, the light transmittance of the transparent conducting layer is more than 83%, the resistivity of the transparent conducting layer is less than 0.001 omega-m, and the thickness of the transparent conducting layer is 0.5-25 mu m;
the quantum dot layer is made of a combination of red light quantum dot materials, green light quantum dot materials and blue light quantum dot materials, and the thickness of the quantum dot light emitting layer is 15-90 mu m.
6. A preparation method of a quantum dot color film according to any one of claims 1 to 5, wherein the preparation method comprises the following steps:
(1) preparing a transparent conducting layer on a transparent base material, coating an anti-etching material on the transparent conducting layer according to pixel point arrangement, etching the transparent conducting layer coated with the anti-etching material until the transparent base material is leaked out of a corresponding position, stripping and cleaning the residual anti-etching material, and mounting a circuit on the transparent conducting layer to obtain a substrate;
(2) and (2) preparing a quantum dot layer on the substrate obtained in the step (1) by an electrodeposition method to obtain the quantum dot color film.
7. The method for preparing the transparent conductive layer according to claim 6, wherein the method for preparing the transparent conductive layer according to step (1) comprises any one or a combination of at least two of magnetron sputtering, vacuum evaporation or sol-gel spin coating;
preferably, the etching of step (1) comprises physical etching and/or chemical etching;
preferably, the coating thickness of the etching-resistant material in the step (1) is 200-15000 nm;
preferably, the washing of step (1) comprises any one of organic solution washing, water washing or plasma washing or a combination of at least two of the organic solution washing, the water washing and the plasma washing;
preferably, the method for preparing the quantum dot deposition layer by the electrodeposition method in the step (2) comprises a method A and a method B;
the method A specifically comprises the following steps:
(A1) reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution;
(A2) respectively placing the substrate obtained in the step (1) in the charged red light quantum dot deposition solution and the charged green light quantum dot deposition solution obtained in the step (A1) for electrodeposition to obtain the quantum dot layers;
the method B specifically comprises the following steps:
(B1) reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution, a charged green light quantum dot deposition solution and a charged blue light quantum electrodeposition solution;
(B2) and (3) respectively placing the substrate obtained in the step (1) in the charged red light quantum dot deposition solution, the charged green light quantum dot deposition solution and the charged blue light quantum dot deposition solution obtained in the step (B1) for electrodeposition to obtain the quantum dot layer.
8. The preparation method of claim 6 or 7, wherein the molar ratio of the quantum dot material to the ligand material in the steps (A1) and (B1) is 1 (1-100);
preferably, the ligand material comprises an organic salt material;
preferably, the ligand material comprises any one of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methylate or sodium ethoxide or a combination of at least two thereof;
preferably, the reactions in the steps (A1) and (B1) are independently carried out at a pH value of 5-11;
preferably, the reaction temperature of the step (A1) and the step (B1) is 120-320 ℃ independently;
preferably, the reaction time of the step (A1) and the step (B1) is 0.5-90 min independently;
preferably, the direct current voltage of the electrodeposition in the steps (A2) and (B2) is 1-12V independently;
preferably, the electrodeposition current in the steps (A2 and (B2) is 0.5-30 mA respectively and independently;
preferably, the electrodeposition time in the steps (A2 and (B2) is 1-30 min independently;
preferably, the thickness of the electrodeposition layer in the step (A2) and the step (B2) is 15-90 μm independently;
preferably, the electrodeposition of the steps (A2) and (B2) further comprises the step of surface spraying;
preferably, the sprayed material is an acrylate material.
9. The preparation method according to any one of claims 6 to 8, characterized by specifically comprising the steps of:
(1) preparing a transparent conducting layer on a transparent base material, arranging and coating an anti-etching material with the thickness of 200-15000 nm on the transparent conducting layer according to pixel points, etching the transparent conducting layer coated with the anti-etching material until the transparent base material leaks from a corresponding position, stripping and cleaning the residual anti-etching material, and mounting a circuit on the transparent conducting layer to obtain a substrate;
(2) preparing a quantum dot layer on the substrate obtained in the step (1) by an electrodeposition method of the method A or the method B to obtain the quantum dot color film;
the method A specifically comprises the following steps: reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution; respectively placing the substrate obtained in the step (1) in a charged red light quantum dot deposition solution and a charged green light quantum dot deposition solution for electrodeposition for 1-30 min to obtain a quantum dot layer with the electrodeposition thickness of 15-90 mu m; the direct current voltage of the electrodeposition is 1-12V, and the current is 0.5-30 mA;
the method B specifically comprises the following steps: reacting the quantum dot material with a ligand material to respectively obtain a charged red light quantum dot deposition solution, a charged green light quantum dot deposition solution and a charged blue light quantum electrodeposition solution; respectively placing the substrate obtained in the step (1) in the charged red light quantum dot deposition solution, the charged green light quantum dot deposition solution and the charged blue light quantum electrodeposition solution for electrodeposition for 1-30 min to obtain a quantum dot layer with the electrodeposition thickness of 15-90 mu m; the direct current voltage of the electrodeposition is 1-12V, and the current is 0.5-30 mA.
10. The application of the quantum dot color film as claimed in any one of claims 1 to 5 in a display device or a lighting device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363361A (en) * | 2021-06-23 | 2021-09-07 | 上海先研光电科技有限公司 | Quantum dot composite, three-dimensional display element and processing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388660A (en) * | 2015-12-17 | 2016-03-09 | 深圳市华星光电技术有限公司 | Preparation method of COA type array substrate |
| CN106479503A (en) * | 2016-09-29 | 2017-03-08 | Tcl集团股份有限公司 | A kind of quantum dot solid film and preparation method thereof |
| CN108615742A (en) * | 2018-07-10 | 2018-10-02 | 南方科技大学 | A kind of display panel production method, display panel and display device |
| CN110120451A (en) * | 2019-04-12 | 2019-08-13 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| CN111607234A (en) * | 2020-06-15 | 2020-09-01 | Tcl华星光电技术有限公司 | Quantum dot composition and preparation method thereof, quantum dot patterning method and patterned quantum dot solid film |
-
2020
- 2020-12-21 CN CN202011520975.9A patent/CN112649991A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388660A (en) * | 2015-12-17 | 2016-03-09 | 深圳市华星光电技术有限公司 | Preparation method of COA type array substrate |
| CN106479503A (en) * | 2016-09-29 | 2017-03-08 | Tcl集团股份有限公司 | A kind of quantum dot solid film and preparation method thereof |
| CN108615742A (en) * | 2018-07-10 | 2018-10-02 | 南方科技大学 | A kind of display panel production method, display panel and display device |
| CN110120451A (en) * | 2019-04-12 | 2019-08-13 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| CN111607234A (en) * | 2020-06-15 | 2020-09-01 | Tcl华星光电技术有限公司 | Quantum dot composition and preparation method thereof, quantum dot patterning method and patterned quantum dot solid film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363361A (en) * | 2021-06-23 | 2021-09-07 | 上海先研光电科技有限公司 | Quantum dot composite, three-dimensional display element and processing method thereof |
| CN113363361B (en) * | 2021-06-23 | 2023-05-16 | 安徽省东超科技有限公司 | Quantum dot complex, three-dimensional display element and processing method thereof |
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