CN112638573B - 处理***和处理方法 - Google Patents

处理***和处理方法 Download PDF

Info

Publication number: CN112638573B
Authority: CN; China
Prior art keywords: wafer; processing; processing object; peripheral edge; modification layer
Prior art date: 2018-09-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201980056207.1A

Other languages

English (en)

Chinese (zh)

Other versions

CN112638573A (zh

Inventor

田之上隼斗

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-09-13

Filing date

2019-09-03

Publication date

2023-08-22

2019-09-03 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2021-04-09 Publication of CN112638573A publication Critical patent/CN112638573A/zh

2023-08-22 Application granted granted Critical

2023-08-22 Publication of CN112638573B publication Critical patent/CN112638573B/zh

Status Active legal-status Critical Current

2039-09-03 Anticipated expiration legal-status Critical

Links

238000012545 processing Methods 0.000 title claims abstract description 222
238000003672 processing method Methods 0.000 title claims description 6
230000004048 modification Effects 0.000 claims abstract description 185
238000012986 modification Methods 0.000 claims abstract description 185
238000000034 method Methods 0.000 claims abstract description 50
230000008569 process Effects 0.000 claims abstract description 32
230000007246 mechanism Effects 0.000 claims abstract description 18
238000000926 separation method Methods 0.000 claims abstract description 12
230000002093 peripheral effect Effects 0.000 claims description 156
238000010438 heat treatment Methods 0.000 claims description 6
235000012431 wafers Nutrition 0.000 description 398
239000010410 layer Substances 0.000 description 221
238000000227 grinding Methods 0.000 description 59
238000012546 transfer Methods 0.000 description 24
238000005530 etching Methods 0.000 description 19
238000001039 wet etching Methods 0.000 description 18
239000007788 liquid Substances 0.000 description 17
238000002407 reforming Methods 0.000 description 13
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
230000015572 biosynthetic process Effects 0.000 description 12
238000005498 polishing Methods 0.000 description 8
239000004065 semiconductor Substances 0.000 description 8
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
230000000694 effects Effects 0.000 description 7
239000003507 refrigerant Substances 0.000 description 7
238000010586 diagram Methods 0.000 description 6
239000000126 substance Substances 0.000 description 6
238000009966 trimming Methods 0.000 description 6
238000004140 cleaning Methods 0.000 description 5
238000001816 cooling Methods 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 4
229960001231 choline Drugs 0.000 description 4
239000012530 fluid Substances 0.000 description 4
230000001678 irradiating effect Effects 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
239000010703 silicon Substances 0.000 description 4
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
238000012423 maintenance Methods 0.000 description 3
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000011084 recovery Methods 0.000 description 2
238000007788 roughening Methods 0.000 description 2
238000003860 storage Methods 0.000 description 2
239000000758 substrate Substances 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
239000002699 waste material Substances 0.000 description 2
238000005411 Van der Waals force Methods 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
239000006061 abrasive grain Substances 0.000 description 1
238000007664 blowing Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
239000000112 cooling gas Substances 0.000 description 1
239000000498 cooling water Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000001035 drying Methods 0.000 description 1
230000003028 elevating effect Effects 0.000 description 1
238000007667 floating Methods 0.000 description 1
-1 for example Substances 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
230000006872 improvement Effects 0.000 description 1
238000010030 laminating Methods 0.000 description 1
238000003825 pressing Methods 0.000 description 1
230000001012 protector Effects 0.000 description 1
230000003252 repetitive effect Effects 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1
238000004065 wastewater treatment Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/703—Cooling arrangements
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Mechanical Engineering (AREA)
Plasma & Fusion (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
General Chemical & Material Sciences (AREA)
Oil, Petroleum & Natural Gas (AREA)
Chemical Kinetics & Catalysis (AREA)
Chemical & Material Sciences (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Laser Beam Processing (AREA)
Hardware Redundancy (AREA)
Dicing (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

CN201980056207.1A 2018-09-13 2019-09-03 处理***和处理方法 Active CN112638573B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2018-171218		2018-09-13
JP2018171218		2018-09-13
PCT/JP2019/034563 WO2020054504A1 (ja)	2018-09-13	2019-09-03	処理システム及び処理方法

Publications (2)

Publication Number	Publication Date
CN112638573A CN112638573A (zh)	2021-04-09
CN112638573B true CN112638573B (zh)	2023-08-22

Family

ID=69777609

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201980056207.1A Active CN112638573B (zh)	2018-09-13	2019-09-03	处理***和处理方法

Country Status (5)

Country	Link
JP (1)	JP7133633B2 (ja)
KR (1)	KR102629529B1 (ja)
CN (1)	CN112638573B (ja)
TW (1)	TWI816877B (ja)
WO (1)	WO2020054504A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7120903B2 (ja)	2018-10-30	2022-08-17	浜松ホトニクス株式会社	レーザ加工装置及びレーザ加工方法
WO2020090902A1 (ja) *	2018-10-30	2020-05-07	浜松ホトニクス株式会社	レーザ加工装置及びレーザ加工方法
US11897056B2 (en)	2018-10-30	2024-02-13	Hamamatsu Photonics K.K.	Laser processing device and laser processing method
JP2022167037A (ja) *	2021-04-22	2022-11-04	キオクシア株式会社	半導体製造装置および半導体装置の製造方法
CN116765593A (zh) *	2021-11-24	2023-09-19	郭辉	一种导电型SiC晶锭的水射流激光滚圆***
CN114473188A (zh) *	2022-03-28	2022-05-13	杭州乾晶半导体有限公司	一种用于剥离晶片的激光加工方法、装置

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JP2004111946A (ja) *	2002-08-30	2004-04-08	Tokyo Seimitsu Co Ltd	レーザーダイシング装置及びダイシング方法
JP2010247189A (ja) *	2009-04-16	2010-11-04	Shin Etsu Polymer Co Ltd	半導体ウェーハの製造方法及びその装置
JP2011224658A (ja) *	2010-04-14	2011-11-10	Samsung Electronics Co Ltd	レーザビームを利用した基板の加工方法
JP2013049161A (ja) *	2011-08-30	2013-03-14	Hamamatsu Photonics Kk	加工対象物切断方法
CN105637618A (zh) *	2013-10-15	2016-06-01	三菱电机株式会社	半导体元件的制造方法、晶圆安装装置
CN105821361A (zh) *	2016-03-18	2016-08-03	中国科学院力学研究所	一种调整铜铬合金触头表面激光改性时运动轨迹的方法
JP2016139726A (ja) *	2015-01-28	2016-08-04	株式会社東京精密	レーザーダイシング装置
JP2017204626A (ja) *	2016-05-06	2017-11-16	国立大学法人埼玉大学	基板加工方法および基板加工装置
JP2018060872A (ja) *	2016-10-03	2018-04-12	株式会社ディスコ	ウエーハの加工方法及び研磨装置

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Publication number	Priority date	Publication date	Assignee	Title
JP2006108532A (ja) *	2004-10-08	2006-04-20	Disco Abrasive Syst Ltd	ウエーハの研削方法
JP2012069736A (ja)	2010-09-24	2012-04-05	Elpida Memory Inc	半導体装置の製造方法
KR20130026810A (ko) *	2011-09-06	2013-03-14	주식회사 이오테크닉스	레이저 가공 방법
JP6078376B2 (ja) *	2013-02-22	2017-02-08	株式会社ディスコ	ウエーハの加工方法

2019
- 2019-09-03 CN CN201980056207.1A patent/CN112638573B/zh active Active
- 2019-09-03 WO PCT/JP2019/034563 patent/WO2020054504A1/ja active Application Filing
- 2019-09-03 JP JP2020545938A patent/JP7133633B2/ja active Active
- 2019-09-03 KR KR1020217010222A patent/KR102629529B1/ko active IP Right Grant
- 2019-09-09 TW TW108132375A patent/TWI816877B/zh active

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004111946A (ja) *	2002-08-30	2004-04-08	Tokyo Seimitsu Co Ltd	レーザーダイシング装置及びダイシング方法
JP2010247189A (ja) *	2009-04-16	2010-11-04	Shin Etsu Polymer Co Ltd	半導体ウェーハの製造方法及びその装置
JP2011224658A (ja) *	2010-04-14	2011-11-10	Samsung Electronics Co Ltd	レーザビームを利用した基板の加工方法
JP2013049161A (ja) *	2011-08-30	2013-03-14	Hamamatsu Photonics Kk	加工対象物切断方法
CN105637618A (zh) *	2013-10-15	2016-06-01	三菱电机株式会社	半导体元件的制造方法、晶圆安装装置
JP2016139726A (ja) *	2015-01-28	2016-08-04	株式会社東京精密	レーザーダイシング装置
CN105821361A (zh) *	2016-03-18	2016-08-03	中国科学院力学研究所	一种调整铜铬合金触头表面激光改性时运动轨迹的方法
JP2017204626A (ja) *	2016-05-06	2017-11-16	国立大学法人埼玉大学	基板加工方法および基板加工装置
JP2018060872A (ja) *	2016-10-03	2018-04-12	株式会社ディスコ	ウエーハの加工方法及び研磨装置

Also Published As

Publication number	Publication date
JPWO2020054504A1 (ja)	2021-09-24
KR20210044893A (ko)	2021-04-23
KR102629529B1 (ko)	2024-01-25
TWI816877B (zh)	2023-10-01
TW202025369A (zh)	2020-07-01
WO2020054504A1 (ja)	2020-03-19
CN112638573A (zh)	2021-04-09
JP7133633B2 (ja)	2022-09-08

Legal Events

Date	Code	Title
2021-04-09	PB01	Publication
2021-04-09	PB01	Publication
2021-06-29	SE01	Entry into force of request for substantive examination
2021-06-29	SE01	Entry into force of request for substantive examination
2023-08-22	GR01	Patent grant
2023-08-22	GR01	Patent grant

Publication	Publication Date	Title
CN112638573B (zh)	2023-08-22	处理***和处理方法
TWI836786B (zh)	2024-03-21	基板處理系統、基板處理方法及電腦記錄媒體
JP7149393B2 (ja)	2022-10-06	基板処理システム及び基板処理方法
TWI837149B (zh)	2024-04-01	基板處理系統及基板處理方法
JP7386075B2 (ja)	2023-11-24	基板処理方法及び基板処理システム
JP7412131B2 (ja)	2024-01-12	基板処理方法及び基板処理システム
JP7086201B2 (ja)	2022-06-17	基板処理システム及び基板処理方法
JP7412161B2 (ja)	2024-01-12	基板処理装置及び基板処理方法
KR20210143175A (ko)	2021-11-26	처리 장치 및 처리 방법
CN114599479B (zh)	2024-01-09	基板处理方法和基板处理***
TW202422684A (zh)	2024-06-01	基板處理系統及基板處理方法
TW202421321A (zh)	2024-06-01	改質層形成裝置及基板處理方法
TW202422683A (zh)	2024-06-01	基板處理方法及基板處理系統