CN112636629A - Schottky micro-generator based on structural ultra-smoothness and preparation method thereof - Google Patents
Schottky micro-generator based on structural ultra-smoothness and preparation method thereof Download PDFInfo
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Abstract
The invention provides a Schottky micro-generator based on structural ultra-smoothness and a preparation method thereof. By utilizing the ultra-smooth technology of the structure, the first metal electrode layer is arranged to lead out the unbalanced carriers in the semiconductor layer, when the conductive layer and the semiconductor layer slide relatively, the unbalanced carriers can move, the effect of outputting stable and high-density direct current signals is achieved, the conductive layer and the semiconductor layer have extremely low friction and no abrasion state when sliding relatively, the stable and high-density output can be realized, and the contradiction between the abrasion, the service life and the output density of the traditional Schottky micro-generator is effectively solved.
Description
Technical Field
The invention relates to the technical field of weak energy capture and micro device power supply, in particular to a Schottky micro generator based on structural super-smoothness and a preparation method thereof.
Background
The nano generator is a device capable of converting excitation energy into electric energy under extremely weak external excitation, has the characteristics of small structure size, wide application range and the like, has very wide application prospect in the fields of self-powered sensors, Internet of things, sensor networks, big data, personal medical systems, artificial intelligence and the like since the proposal, and particularly can provide stable electric power for micro-nano devices applied to the fields to realize self-energy supply, such as vascular robots, cardiac pacemakers and the like. Compared with the traditional electrostatic induction type nano generator, the Schottky micro generator has the advantages of simple structure, low direct current output and internal impedance and the like, and has extremely wide application prospect. However, the schottky micro-generator requires relative sliding between the conductive and semiconductor layers, and friction and wear during sliding will cause device failure, which will result in a reduction in output density, although reducing the effective contact area may reduce the effect of frictional wear to some extent.
The chinese patent application with publication number CN110752784A discloses a surface state enhanced high current density dynamic schottky generator and a preparation method thereof, the generator sequentially comprises a metal electrode, a semiconductor substrate, a surface rough layer and metal from top to bottom, the metal and the semiconductor substrate are in schottky contact, the surface rough layer is a surface layer with rough appearance formed by rough treatment on a polished surface on one side of the semiconductor substrate, the metal is directly pressed on the surface rough layer, and the metal and the surface rough layer are in contact and can relatively move to form the surface state enhanced high current density dynamic schottky generator. It increases its current by increasing the friction, but the increase in friction results in a shorter lifetime of the device.
The traditional Schottky micro-generator adopts a friction force increasing mode to achieve current increase, but the damage of devices can be accelerated due to the friction force increase, or the effective contact area is reduced to avoid more abrasion so as to influence the output density, and a large contradiction exists between the traditional Schottky micro-generator and the device, but the contradiction is difficult to adjust by the Schottky micro-generator in the prior art.
Disclosure of Invention
The invention aims to provide a Schottky micro-generator based on structural ultra-smoothness and a preparation method thereof, and aims to solve the technical problem that in the prior art, the friction and the abrasion of the Schottky micro-generator and the small contact surface cause the reduction of current density, and the contradiction exists.
In order to achieve the purpose, the invention adopts the technical scheme that: the utility model provides a little generator of schottky based on structure is super smooth, the little generator of schottky based on structure is super smooth, including conducting layer and semiconductor layer, still including locating the first metal electrode layer of semiconductor layer one side, the conducting layer with form super smooth contact and schottky contact between the semiconductor layer, first metal electrode layer with the semiconductor layer forms ohmic contact, the conducting layer with semiconductor layer relative motion and output signal of telecommunication.
Further, either one of the conductive layer or the semiconductor layer includes a single-crystal two-dimensional interface, and the other of the conductive layer or the semiconductor layer includes a single-crystal two-dimensional interface, or is a conductive layer or a semiconductor layer having an atomically flat surface, and preferably, the single-crystal two-dimensional interface is an atomically flat surface.
Further, the conductive layer includes a single-crystal two-dimensional interface, and the semiconductor layer is a semiconductor layer having an atomically flat surface.
Further, the conductive layer comprises graphite or graphene; or the conducting layer is made of a metal material with an atomically flat surface.
Further, the semiconductor layer is made of a semiconductor material with a single-crystal two-dimensional interface, and molybdenum disulfide, tungsten diselenide, tungsten disulfide or black phosphorus is adopted; or the semiconductor layer is made of a semiconductor material with an atomic-level flat surface, and any one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride and indium phosphide is adopted.
Furthermore, a second metal electrode layer is further arranged on the conducting layer, and the second metal electrode layer is electrically connected with the conducting layer.
Further, the first metal electrode layer and the second metal electrode layer may be an alloy of one or more of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead, and nickel.
The invention also provides a preparation method of the Schottky micro-generator based on the structure super-slip technology, which comprises the following steps:
providing a semiconductor layer and/or a conductive layer having a structured, ultra-smooth surface;
forming a first metal electrode layer on a substrate, and transferring the semiconductor layer onto the first metal electrode layer, wherein the first metal electrode layer and the semiconductor layer form ohmic contact;
and transferring the conductive layer to the surface of the semiconductor layer, wherein the conductive layer and the semiconductor layer form a super-slip contact and a Schottky contact on the surface, and the conductive layer and the semiconductor layer slide relatively to generate an electric signal.
Further, the method for providing the semiconductor layer and/or the conductive layer with the structured super-smooth surface comprises the following steps:
directly selecting a semiconductor layer or a conductive layer with an atomic-level flat surface; or polishing the top surface of the semiconductor layer or the bottom surface of the conductive layer to enable the surface of the semiconductor layer to have an atomically flat surface;
a semiconductor layer or a conductive layer having a single crystal two-dimensional interface is selected.
Further, the surface of the conductive layer further comprises a second metal electrode layer, and the second metal electrode layer is electrically connected with the conductive layer.
The Schottky micro-generator based on the ultra-smooth structure and the preparation method thereof have the beneficial effects that:
1. by utilizing the structural ultra-smooth technology, the conductive layer and the semiconductor layer have extremely low friction and no abrasion when sliding relatively, when the conductive layer and the semiconductor layer slide relatively, the dynamic Schottky junction generates the movement of non-equilibrium carriers, and a stable and high-density direct current signal is output. Due to the ultra-smooth contact between the conductive layer and the semiconductor layer, the van der waals interaction surface between the interfaces has an effective contact area close to 100%, thereby being capable of realizing stable and high-density output; meanwhile, due to the characteristics of ultra-smooth structure, extremely low friction and no abrasion, the service life of the device can be almost unlimited; because the friction force is small, the energy loss is small, the external force required by the Schottky micro-generator is extremely low, the Schottky micro-generator can be applied to an extremely weak environment, the conversion efficiency approaches to 100 percent, the contradiction among the abrasion, the service life and the output density of the traditional Schottky micro-generator is effectively solved, and the technology of the traditional Schottky micro-generator is revolutionarily changed.
2. The first metal electrode layer is arranged at the bottom of the semiconductor layer, so that non-equilibrium carriers in the semiconductor layer are led out to the first metal electrode layer, and when relative sliding occurs between the conductive layer and the semiconductor layer, the non-equilibrium carriers can move, and the effect of outputting stable and high-density direct current signals is achieved. The second metal electrode layer is arranged on the top of the conducting layer, so that the conducting effect of the conducting layer can be enhanced, the thickness of the conducting layer can be increased, the transferability of the conducting layer is enhanced, and the conducting layer can be protected. The ultra-smooth conductive layer has a self-cleaning effect in an ultra-smooth state, namely impurity molecules or impurity atoms on the conductive layer or the semiconductor layer can be removed in the sliding process, so that the contact stability can be ensured, the surface oxidation effect can be avoided, the ultra-smooth contact between the conductive layer and the semiconductor layer can be ensured all the time, and the service life is longer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a schottky micro-generator based on the structural super-slip technology according to an embodiment of the present invention;
fig. 2 is a schematic top view of a schottky micro-generator based on the ultra-slip technology according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a conventional Schottky microgenerator of the present invention;
fig. 4 is a graph comparing current output of a schottky micro-generator based on the structural ultra-slip technique and a conventional schottky micro-generator according to an embodiment of the present invention;
FIG. 5 is a graph of a surface oxidation characterization of a conventional Schottky microgenerator during operation;
FIG. 6 is a graphical representation of the post-operational topography of a conventional Schottky micro-generator;
FIG. 7 is a schematic diagram of a Schottky micro-generator based on the structural ultra-slip technique according to an embodiment of the present invention;
fig. 8 is a diagram illustrating a self-cleaning effect of a schottky micro-generator based on the ultra-slip structure technology according to an embodiment of the present invention.
Description of reference numerals:
1. a conductive layer; 2. a semiconductor layer; 3. a second metal electrode layer; 4. a first metal electrode layer; 5. A displacement platform.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, "micro-generator" refers to a power generation device having a size in the nanometer, micrometer, and millimeter scales.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 1 and fig. 2, a schottky micro-generator based on ultra-smooth structure according to the present invention will be described. The structure ultra-smooth-based Schottky microgenerator comprises a conductive layer 1, a semiconductor layer 2 and a first metal electrode layer 4, wherein the conductive layer 1 is arranged on the semiconductor layer 2, the first metal electrode layer 4 is arranged on one side of the semiconductor layer 2, and the first metal electrode layer 4 can form ohmic contact with the semiconductor layer 2, can lead out non-equilibrium carriers in the semiconductor layer 2 into the first metal electrode layer 4, so that ultra-smooth contact and schottky contact are formed between the conductive layer 1 and the semiconductor layer 2, and relative movement can occur between the conductive layer 1 and the semiconductor layer 2, the relative movement can be realized by driving one of the conductive layer or the semiconductor layer by the energy capturing element, and the energy capturing element is directly or indirectly connected with the conductive layer 1 and the semiconductor layer 2 through the lead, can output stable and high-density electric signals, thereby forming the Schottky generator with ultra-smooth structure.
For the conducting layer 1 and the semiconductor layer 2, ultra-smooth contact and schottky contact exist between the conducting layer 1 and the semiconductor layer 2 at the same time, wherein the ultra-smooth contact means that the friction force is almost zero when the conducting layer 1 and the semiconductor layer 2 move relatively, the friction coefficient is less than one thousandth, and the abrasion is zero. When the schottky contact is in contact with a metal and a semiconductor material, an energy band of a semiconductor at an interface is bent, so that a schottky barrier is formed, a large amount of interface charges exist in the barrier, electricity can be generated, ultra-smooth contact and schottky contact can exist between the conducting layer 1 and the semiconductor layer 2 at the same time, the contact area can be effectively increased, the friction force cannot be increased, and the contradiction between the abrasion, the service life and the output density of the traditional schottky micro-generator is effectively solved.
At least one of the conductive layer 1 and the semiconductor layer 2 is a single-crystal two-dimensional interface material, and the other is a single-crystal two-dimensional interface material or has an atomically flat surface. The monocrystalline two-dimensional interface material refers to a two-dimensional material having a monocrystalline phase, wherein the two-dimensional material refers to a material in which electrons can move freely only in a nanoscale of two dimensions, and preferably, when the materials of the conductive layer 1 and the semiconductor layer 2 are monocrystalline two-dimensional interface materials, the monocrystalline two-dimensional interface material preferably also has an atomically flat surface. The atomically flat surface refers to a surface with a surface roughness less than 1nm, wherein the conducting layer 1 and the semiconductor layer 2 need to form not only schottky contact but also ultra-smooth contact, so the following ways are adopted for the materials of the conducting layer 1 and the semiconductor layer 2:
1. the conductive layer 1 is made of a conductive material with a single-crystal two-dimensional material, for example, graphite or graphene, and the semiconductor layer 2 may be made of a semiconductor material with a single-crystal two-dimensional interface, for example, tungsten diselenide, tungsten disulfide, or black phosphorus; alternatively, the semiconductor layer 2 may be made of a semiconductor material having an atomically flat surface, for example, an alloy of one or more of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride, and indium phosphide, and any surface of the semiconductor material may be processed to be atomically flat.
2. The conductive layer 1 is made of a metal material having an atomically flat surface, for example, an alloy of any one or more of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead, or nickel, and any surface of the metal material is processed to be atomically flat; in this case, the semiconductor layer 2 is made of a semiconductor material having a single-crystal two-dimensional interface, such as tungsten diselenide, tungsten disulfide, or black phosphorus.
Further, as a specific embodiment of the schottky micro-generator based on the structural super-slip technology provided by the present invention, a second metal electrode layer 3 may be further disposed on the top of the conductive layer 1, a first metal electrode layer 4 is disposed on the bottom or one side of the semiconductor layer 2, and the first metal electrode layer 4 and the semiconductor layer 2 form an ohmic contact, and are respectively connected to the second metal electrode layer 3 and the first metal electrode layer 4 by leads, and an electrical signal formed between the conductive layer 1 and the semiconductor layer 2 is led out, so as to obtain the schottky micro-generator based on the structural super-slip technology, which can be placed in a very weak environment, collects external energy to drive the conductive layer 1 and the semiconductor layer 2 to generate relative motion, and generates a dc signal to power a small device. The purpose of the second metal electrode layer 3 is to facilitate current output, and the second metal electrode layer 3 may also be omitted to output current in other manners, which is not limited in this time.
The first metal electrode layer 4 can be in conduction with the semiconductor layer 2, so that non-equilibrium carriers in the semiconductor layer 2 can be led out to the first metal electrode layer 4, schottky contact between the conductive layer 1 and the semiconductor layer 2 can be achieved, and an electric signal can be generated when the conductive layer 1 and the semiconductor layer 2 move relatively. In the contact between the conventional super-slip sheet and the substrate in the prior art, because the non-equilibrium carriers in the substrate can not flow, the Schottky contact can not be formed.
Preferably, the second metal electrode layer 3 and the first metal electrode layer 4 may be made of one or more alloys of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead, and nickel, and have good electrical conductivity, and can be connected to a lead to output current.
For the output effect of the schottky micro-generator based on the structural ultra-slip technique, please refer to fig. 4, wherein fig. 4(a) is a current measurement experiment of 2000 cycles of the schottky micro-generator based on the structural ultra-slip technique; as can be seen in connection with fig. 4 (a): the current output in each slip cycle is very stable and as the number of slip cycles increases, its current also gradually increases. As can be seen in connection with fig. 4 (b): a sliding cycle test of approximately 5000 cycles was performed at a constant normal force, gradually increasing the corresponding velocity from 4 μm/s to 24 μm/s. As can be seen from the figure, the average current (upper curve) does not decay, increasing with the number of slip cycles at different slip speeds. The measured friction (lower curve) has a decline over the first approximately 64 cycles, and over the course of thousands of subsequent slips the friction is substantially stable at different slip speeds and increases slowly with increasing slip speed.
For clarity of comparison, a conventional schottky micro-generator was provided as a comparative example in which a platinum plated AFM probe was slid directly against N-type silicon having the same structure as shown in fig. 3. The test piece is subjected to a measuring current experiment of 2000 cycles and a sliding cycle test of 5000 times under constant normal force; as can be seen in connection with fig. 4 (b): the output current mainly takes a pulse form, the output of the current is unstable, the peak current can reach 60pA, but the average current is only 15 pA; during the first 30 slip cycles, the average current decays rapidly to 0 and the power generation process stops. And, the friction force of the traditional schottky micro generator is twice that of the schottky micro generator based on the structure ultra-smooth technology.
The above experimental results show that: the schottky microgenerator based on the structure ultra-smooth technology has almost unlimited life, and the current of the traditional schottky microgenerator is attenuated very fast, so that the power generation process stops, and the output current of the schottky microgenerator based on the structure ultra-smooth technology is more stable, and the current output of the traditional schottky microgenerator is improved by two orders of magnitude.
The current of the traditional Schottky microgenerator disappears mainly because the high heat of local friction causes the surface of a semiconductor to be oxidized to form an insulating layer; it can be seen from the characterization results in conjunction with fig. 5(a) and (b) that a current of about 25pA is clearly present in the non-slip region, but in the middle 10 × 10 μm slip region, after 66 slip cycles have elapsed, the generated dc current decays to zero.
The elemental composition and relative content of the no-slip region and the 66-slip period region on the silicon surface were characterized by an energy spectrometer. In connection with the experimental results obtained in fig. 5(c), the contents of oxygen and carbon elements increased after 66 sliding cycles, wherein the content of oxygen element increased from 0.45% to 0.7%; the content of carbon element is increased from 1.6 percent to 2.8 percent; while the content of silicon element is reduced from 97.8% to 96.5%. The in-situ topography shown in fig. 6 shows a small raised area in the sliding region, with a height of about 1 nm. From the test results, it is surmised that interface friction and large local pressure during sliding of the AFM probe and the silicon surface cause local high temperature, resulting in surface accumulation of carbon and oxygen elements, resulting in rapid oxidation on the silicon surface and formation of a thin insulating layer.
As shown in fig. 5(d) - (g), by selecting the I-V curve characterization function of the C-AFM at the points 1# and 2# identified in fig. 5(a), and measuring the points 1# and 2# respectively, after 66 sliding cycles, the I-V curves at the points 1# and 2# exhibit capacitance characteristics at an amplitude voltage of 4V, but the I-V curves of the schottky diode can be obtained at the same position before sliding at an amplitude voltage of 4V, which indicates that the surface is insulated after 66 sliding cycles.
For a schottky micro-generator based on the structured super-slip technique, SEM characterization and AFM scan morphology of the interface of the graphite islands as shown in fig. 7(a) and (b), which have very flat two-dimensional van der waals surfaces, can form a structured super-slip contact with an atomically smooth N-type silicon surface whose AFM scan morphology is shown in fig. 7 (d). Therefore, the conductive layer 1 and the semiconductor layer 2 will have a larger effective contact area in the structural ultra-slip contact state, have a larger current density, and the low energy dissipation inhibits the deposition and oxidation of carbon on the silicon surface under the structural ultra-slip contact condition, thereby prolonging the service life.
With the structure ultra-sliding contact shown in fig. 8(a), the semiconductor layer 2 has a self-cleaning effect during the repeated sliding process of the semiconductor layer 2, so that the semiconductor layer 2 can repeatedly clean impurity molecules in the sliding region and maintain a stable structure ultra-sliding contact state, thereby achieving ultra-long service life and stable and efficient dc output current. And this phenomenon is reflected by a reduction in friction during the initial slip cycle shown in fig. 8 (b).
In combination with the above experiments it is evident that: for the Schottky micro-generator based on the structure ultra-smooth technology, the conducting layer 1 and the semiconductor layer 2 are kept in structure ultra-smooth contact, power generation is completely realized based on a carrier migration mechanism caused by an unbalanced electric field, the Schottky micro-generator has a very large effective contact area, an ultra-low friction coefficient and no abrasion characteristic, high current density can be realized, ultra-long service life and extremely-stable output and high conversion efficiency can be realized, the output current density is 1000 times higher than that of the conventional Schottky micro-generator, the Schottky micro-generator is extremely stable in at least 5000 sliding cycles, and the problems of short service life and insufficient current density of the conventional Schottky micro-generator are solved.
Example 2
The invention also provides a preparation method of the Schottky micro-generator based on the structure super-slip technology, which comprises the following steps:
s1, forming a first metal electrode layer 4 on the flat substrate or the displacement platform 5, for example, electroplating or laying the first metal electrode layer 4 on the polished silicon substrate, and transferring the semiconductor layer 2 onto the first metal electrode layer 4, wherein the first metal electrode layer 4 and the semiconductor layer 2 form ohmic contact;
s2, polishing the top surface of the semiconductor layer 2 to make the surface roughness less than 1nm, so that the surface of the semiconductor layer 2 has an atomically flat surface; or, the semiconductor layer 2 with the atomic-level flat surface is directly selected; as for the material of the semiconductor layer 2, a semiconductor layer with a single crystal two-dimensional interface, such as molybdenum disulfide, tungsten diselenide, tungsten disulfide, or black phosphorus, can be directly selected;
s3, polishing the bottom surface of the conductive layer 1 to make the surface roughness less than 1nm and make the surface of the conductive layer 1 have an atomically flat surface; or, directly selecting the conducting layer 1 with the atomically flat surface on the surface; for the material of the conductive layer 1, a conductive layer with a single crystal two-dimensional interface, such as HOPG graphite island, graphene, etc., can be directly selected;
the material of the conducting layer 1 and the semiconductor layer 2 is selected, metal capable of forming ultra-smooth contact and Schottky contact at the same time is needed, then the conducting layer 1 is transferred to the top surface of the semiconductor layer 2, and the conducting layer 1 and the semiconductor layer 2 form structural ultra-smooth and Schottky contact;
and S4, forming a second metal electrode layer 3 on the surface of the conductive layer 1, coating the top metal layer on the upper surface of the conductive layer 1, and arranging the second metal electrode layer 3 and the first metal electrode layer 4 on the conductive layer 1 by electroplating or paving and the like, and connecting the second metal electrode layer 3 and the first metal electrode layer 4 through a lead.
The conductive layer 1 and the semiconductor layer 2 which are manufactured by the steps slide relatively, and the electric signals of the semiconductor layer 2 and the conductive layer 1 are led out by adopting a lead. The Schottky generator manufactured by the method has 100 percent of effective contact area, thereby realizing stable and high-density output; meanwhile, due to the characteristics of ultra-smooth structure, low friction and no abrasion, the almost unlimited service life can be realized, and the contradiction between the abrasion, the service life and the output density of the traditional Schottky microgenerator is effectively solved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. Schottky microgenerator based on structure is super smooth, including conducting layer and semiconductor layer, its characterized in that: the semiconductor device is characterized by further comprising a first metal electrode layer arranged on one side of the semiconductor layer, ultra-smooth contact and Schottky contact are formed between the conductive layer and the semiconductor layer, ohmic contact is formed between the first metal electrode layer and the semiconductor layer, and the conductive layer and the semiconductor layer move relatively and output electric signals.
2. The structure-based super-slip schottky microgenerator of claim 1, wherein: either one of the conductive layer or the semiconductor layer includes a single-crystal two-dimensional interface, and the other of the conductive layer or the semiconductor layer includes a single-crystal two-dimensional interface, or is a conductive layer or a semiconductor layer having an atomically flat surface, and preferably, the single-crystal two-dimensional interface is an atomically flat surface.
3. The structure-based super-slip schottky microgenerator of claim 2, wherein: the conductive layer comprises a single-crystal two-dimensional interface, and the semiconductor layer is a semiconductor layer with an atomically flat surface.
4. The structure-based super-slip schottky microgenerator of claim 2, wherein: the conductive layer comprises graphite or graphene; or the conducting layer is made of a metal material with an atomically flat surface.
5. The structure-based super-slip schottky microgenerator of claim 2, wherein: the semiconductor layer is made of a semiconductor material with a single-crystal two-dimensional interface, and molybdenum disulfide, tungsten diselenide, tungsten disulfide or black phosphorus are adopted; or the semiconductor layer is made of a semiconductor material with an atomic-level flat surface, and any one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride and indium phosphide is adopted.
6. The structure-based super-slip schottky microgenerator of claim 1, wherein: and a second metal electrode layer is also arranged on the conducting layer and is electrically connected with the conducting layer.
7. The structure-based super-slip schottky microgenerator of claim 6, wherein: the first metal electrode layer and the second metal electrode layer can be made of one or more of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead and nickel.
8. The preparation method of the Schottky microgenerator based on the ultra-smooth structure is characterized by comprising the following steps of: the method comprises the following steps:
providing a semiconductor layer and/or a conductive layer having a structured, ultra-smooth surface;
forming a first metal electrode layer on a substrate, and transferring the semiconductor layer onto the first metal electrode layer, wherein the first metal electrode layer and the semiconductor layer form ohmic contact;
and transferring the conductive layer to the surface of the semiconductor layer, wherein the conductive layer and the semiconductor layer form a super-slip contact and a Schottky contact on the surface, and the conductive layer and the semiconductor layer slide relatively to generate an electric signal.
9. The method for preparing a schottky microgenerator based on structural ultra-smooth of claim 8, wherein the method for providing the semiconductor layer and/or the conductive layer with the structural ultra-smooth surface is:
directly selecting a semiconductor layer or a conductive layer with an atomic-level flat surface; or polishing the top surface of the semiconductor layer or the bottom surface of the conductive layer to enable the surface of the semiconductor layer to have an atomically flat surface;
a semiconductor layer or a conductive layer having a single crystal two-dimensional interface is selected.
10. The method of claim 8 for making a schottky microgenerator based on structural ultra-slip, wherein: the surface of the conducting layer further comprises a second metal electrode layer, and the second metal electrode layer is electrically connected with the conducting layer.
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| PCT/CN2021/141216 WO2022143463A1 (en) | 2020-12-30 | 2021-12-24 | Schottky micro-generator based on structural superlubricity, and preparation method therefor |
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| CN112985472A (en) * | 2021-05-21 | 2021-06-18 | 深圳清华大学研究院 | Contact type ultra-smooth encoder |
| CN113746365A (en) * | 2021-09-01 | 2021-12-03 | 深圳清华大学研究院 | Integrated micro-generator with ultra-smooth structure, capacitive circuit and micro distributed device |
| WO2022143463A1 (en) * | 2020-12-30 | 2022-07-07 | 深圳清华大学研究院 | Schottky micro-generator based on structural superlubricity, and preparation method therefor |
| WO2023236532A1 (en) * | 2022-06-08 | 2023-12-14 | 深圳清华大学研究院 | Micro power generation apparatus based on blood vessel pulsation, and implantable micro device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5434305B2 (en) * | 2009-06-30 | 2014-03-05 | トヨタ紡織株式会社 | Power generation mat |
| CN103368453B (en) * | 2013-03-12 | 2016-04-13 | 北京纳米能源与***研究所 | A kind of sliding friction nano generator and electricity-generating method |
| CN110350819B (en) * | 2019-06-22 | 2020-10-23 | 深圳清华大学研究院 | Electrostatic generator based on ultra-smooth material |
| CN215072193U (en) * | 2020-12-30 | 2021-12-07 | 深圳清华大学研究院 | Schottky microgenerator based on structure super-smoothness |
| CN112636629A (en) * | 2020-12-30 | 2021-04-09 | 深圳清华大学研究院 | Schottky micro-generator based on structural ultra-smoothness and preparation method thereof |
-
2020
- 2020-12-30 CN CN202011611712.9A patent/CN112636629A/en active Pending
-
2021
- 2021-12-24 WO PCT/CN2021/141216 patent/WO2022143463A1/en active Application Filing
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| WO2022143463A1 (en) * | 2020-12-30 | 2022-07-07 | 深圳清华大学研究院 | Schottky micro-generator based on structural superlubricity, and preparation method therefor |
| CN112985472A (en) * | 2021-05-21 | 2021-06-18 | 深圳清华大学研究院 | Contact type ultra-smooth encoder |
| CN112985472B (en) * | 2021-05-21 | 2021-09-21 | 深圳清华大学研究院 | Contact type ultra-smooth encoder |
| CN113746365A (en) * | 2021-09-01 | 2021-12-03 | 深圳清华大学研究院 | Integrated micro-generator with ultra-smooth structure, capacitive circuit and micro distributed device |
| CN113746365B (en) * | 2021-09-01 | 2023-08-29 | 深圳清华大学研究院 | Integrated micro-generator with ultra-smooth structure, capacitive circuit and miniature distributed device |
| WO2023236532A1 (en) * | 2022-06-08 | 2023-12-14 | 深圳清华大学研究院 | Micro power generation apparatus based on blood vessel pulsation, and implantable micro device |
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