CN112635564A - SOI (silicon on insulator) -based LDMOS (laterally diffused Metal oxide semiconductor) device based on flexible substrate and manufacturing method thereof - Google Patents
SOI (silicon on insulator) -based LDMOS (laterally diffused Metal oxide semiconductor) device based on flexible substrate and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an SOI-based LDMOS device based on a flexible substrate and a manufacturing method thereof, aiming at further optimizing the contradictory relation between breakdown voltage and specific on-resistance so as to optimize the performance of the device, and being applicable to a flexible electronic system. The device combines a power device SOI LDMOS with excellent performance with a flexible substrate, adopts a P-type silicon substrate material with an SOI base, and forms a drift region and a base region on an epitaxial layer on the SOI base by doping; etching and depositing a surface electrode at the left end of the base region, wherein the surface electrode sequentially penetrates through the base region and the SOI base from the surface of the device along the longitudinal direction and extends into the upper part of the P-type silicon layer; and forming an oxidation groove filled with a dielectric material on the surface of the middle region of the drift region. The power device SOI LDMOS is combined with the flexible substrate, so that novel breakthrough and innovation in the field of traditional inorganic semiconductor power devices and flexible electronics are realized, and the defect of poor electronic performance of flexible organic materials can be overcome.
Description
Technical Field
The invention relates to the field of flexible electronic systems, in particular to an SOI (Silicon-On-Insulator) based lateral double-diffused metal oxide semiconductor field effect transistor based On a flexible substrate and a manufacturing method thereof.
Background
One of the devices that can be used as a switching power device in a conventional inorganic semiconductor and applied to an integrated circuit is an SOI (Silicon-On-Insulator) based Lateral Double-diffused metal oxide semiconductor field effect transistor (LDMOS for short), and the power device has the advantages of high speed, high integration level, low power consumption and the like, and can be applied to a high-frequency high-voltage integrated circuit.
With the rapid development of the traditional inorganic semiconductor industry, materials, devices and processes thereof are also rapidly developed. The development of the electronic performance of the inorganic material is gradually close to the limit, and the performance is difficult to continue to be improved, the size is reduced, the cost is reduced and the like; the number of devices based on inorganic semiconductor materials in unit area cannot be infinitely increased according to Moore's law, and the performance of the devices in small size can be confronted with various problems, such as current leakage caused by quantum tunneling effect; meanwhile, the inorganic semiconductor material has limited sources, complex process and higher cost.
In recent years, flexible organic semiconductor materials and devices thereof with simple process and low cost are beginning to be discovered and become new research hotspots. The organic material and the device thereof can realize the functions of information display, sensing, storage, photoelectric conversion and the like of inorganic semiconductors such as silicon and the like, can play a role in supplementing and expanding the inorganic semiconductor devices, and have infinite potential in the development of future flexible electronic systems. In view of the current industrial development, the main development direction of flexible electronic materials and devices thereof is not high integration, but the replacement of inorganic transistors in simple circuits, thereby realizing potential application value in flexible electronic systems. Therefore, research in the field of flexible electronic systems in the fields of switching power devices, integrated circuits, and the like is still relatively blank.
The quantity and the functions of the flexible organic semiconductor materials can be obtained by means of chemical synthesis, modification and the like, and different functional requirements can be easily met; and the organic material and the device thereof have relatively simple processes and low cost. At present, great breakthrough is made on the performance development of flexible materials, for example, the mobility of organic materials based on rigid substrates can be broken by hundreds; however, organic materials have a relatively low mobility when based on flexible substrates having a relatively high surface roughness.
Disclosure of Invention
The invention aims to provide a novel transverse double-diffusion metal oxide semiconductor field effect transistor, which further optimizes the contradictory relation between breakdown voltage and specific on-resistance so as to optimize the device performance and can be applied to a flexible electronic system.
The technical scheme of the invention is as follows:
an SOI-based lateral double diffused metal oxide semiconductor field effect transistor based on a flexible substrate, comprising:
a substrate of flexible material;
the P-type silicon layer is positioned on the surface of the substrate;
an SOI base located on the surface of the P-type silicon layer;
a base region and a drift region formed on an epitaxial layer on the SOI base are respectively and oppositely arranged on the left side and the right side;
a source region formed on the upper part of the base region and composed of P+Region and N+Region composition of said P+Region and N+The areas are respectively and oppositely positioned at the left side and the right side;
a source electrode positioned at a middle position of the surface of the source region;
at P+The surface electrode on the left side of the region sequentially penetrates through the base region and the SOI base from the surface of the device along the longitudinal direction and extends into the upper part of the P-type silicon layer; the surface electrode and the source electrode are connected together;
at N+A gate oxide layer and a gate electrode on the surface of the base region on the right side of the region;
an oxidation groove which is positioned on the surface of the middle region of the drift region and is filled with insulating medium materials;
the drain region is positioned on the right end surface of the drift region;
and the drain electrode is positioned on the surface of the drain region.
The flexible substrate material can be selected from flexible materials with different characteristics such as transparency, non-transparency, high temperature resistance and the like according to different occasions such as photoelectricity, non-photoelectricity and the like; the thickness of the flexible substrate material can be set reasonably according to the application and performance requirements. The SOI base is used as the buried oxide layer in the device body; the P-type silicon layer and the SOI base can be selected with different doping concentrations and thicknesses according to different occasions and different performance requirements, wherein the thickness of the P-type silicon layer is required to be as thin as possible when the device is applied to a flexible electronic system, and the thickness of the SOI base can be compromised according to the requirements of device performance, bending diameter, bending times and the like. The trench type oxidation region in the middle region of the upper part of the drift region can reasonably select different length and width combinations according to different requirements (mainly based on performance requirements such as breakdown voltage).
On the basis of the scheme, the invention further optimizes the following steps:
the flexible substrate can be flexible materials such as PDMS, PET, PI, PEN, etc. The thickness of the flexible substrate material can be reasonably set according to application occasions and performance requirements, and the typical value is 200-500 mu m.
The surface electrode is a P + polysilicon material.
Typical values for the doping concentration of the P-type silicon layer are 1 x 1013cm-3～1×1015cm-3。
Typical values for the doping concentration of the drift region are 1 x 1015cm-3～1×1017cm-3。
Typical values for base doping concentration are 1 x 1015cm-3～5×1017cm-3。
The thickness of the P-type silicon layer is as thin as possible when the device is applied to a flexible electronic system, and the typical value is 2-10 mu m; the thickness of the SOI base can be compromised according to requirements of device performance, bending diameter, bending times and the like, and the typical value is 1-3 mu m; typical values of the thicknesses of the drift region and the base region are 1-2 μm.
The thickness of the surface electrode is larger than the sum of the thicknesses of the base region and the SOI base, and the surface electrode extends into the upper part of the P-type silicon layer by 0-1 mu m.
A typical value for the width of the surface electrode is 1 μm.
The length and the width of the oxidation groove in the drift region are reasonably set along with the performance requirements of breakdown voltage and the like, the length of the oxidation groove should not exceed the length of the drift region, and the depth of the oxidation groove should not exceed the thickness of the drift region. The left end of the oxidation groove is recommended to be 1-3 mu m away from the base region, the right end of the oxidation groove is recommended to be 0-3 mu m away from the drain region, and the depth of the oxidation groove is 20-60% of the thickness of the drift region.
A method for manufacturing the SOI-based lateral double-diffused metal oxide semiconductor field effect transistor based on the flexible substrate comprises the following steps:
1) selecting a proper P-type silicon substrate material with an SOI base;
2) forming a drift region and a base region on an epitaxial layer on the SOI base by doping;
3) forming a groove in the drift region through etching;
4) growing silicon dioxide in the groove to serve as an oxidation groove in the drift region;
5) growing a layer of silicon dioxide as a gate dielectric material at the right end of the base region;
6) etching the left end of the base region, and forming a groove which can extend to the surface of the P-type substrate through the base region and the SOI base;
7) length P in the trench+Polysilicon is used as a surface electrode;
8) forming a source region and a drain region in the drift region and the base region by doping;
9) growing a layer of metal material on the middle part of the surface of the source region to serve as a source electrode, and growing a layer of metal material on the surface of the drain region to serve as a drain electrode;
10) growing a layer of polycrystalline silicon or metal material on the gate dielectric material to be used as a gate electrode;
11) and combining the processed SOI LDMOS with a flexible substrate through processes such as diamond grinding of the substrate, transfer printing and the like.
The technical scheme of the invention has the following beneficial effects:
if an SOI (Silicon-On-Insulator) based lateral double-diffused metal oxide semiconductor Field effect transistor (SOI LDMOS for short) is simply combined with an insulating flexible substrate, the original P-type Silicon substrate will float, and further the substrate electrode and the original Reduced Surface Field (RESURF) technology are lost, so that the longitudinal electric Field will disappear, and the electric Field distribution and the breakdown voltage performance will be Reduced. Therefore, the invention also adds the surface electrode and the drift region oxidation groove structure, relieves the adverse effects of the missing longitudinal electric field, the breakdown voltage reduction and the like caused by the missing substrate electrode, and transfers the breakdown point of the device from the surface to the body while optimizing the transverse and longitudinal electric fields, thereby effectively improving the overall performance of the structure.
According to the structure, the power device SOI LDMOS is combined with the flexible substrate, so that new breakthrough and innovation in the field of traditional inorganic semiconductor power devices and flexible electronics are realized, and the defect of poor electronic performance of flexible organic materials can be overcome. Meanwhile, the novel research fields of flexible electronic systems such as processes, circuits and the like can be expanded.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
FIG. 2 is a substrate thickness t sub15 μm, drift region length LDThe SOI LDMOS electric field profile of 4 μm, in which (a) is a surface electric field profile and (b) is a vertical electric field profile.
FIG. 3 is a substrate thickness t sub15 μm, drift region length LDThe breakdown characteristics of the SOI LDMOS are shown in 4 μm, where (a) is a simulation result diagram and (b) is an experiment result diagram.
FIG. 4 is a graph comparing the electric field distribution of several SOI LDMOS devices, wherein (a) is a surface electric field distribution graph and (b) is a vertical electric field distribution graph.
Fig. 5 is a graph comparing breakdown characteristics of several SOI LDMOS devices.
The reference numbers illustrate:
1-a substrate of flexible material; a 2-P type silicon layer; a 3-SOI group; 4-a drift region; 5-a drain region; 6-a drain electrode; 7-an oxidation tank; 8-a gate dielectric layer; 9-a gate electrode; 10-a source electrode; 11-N+Region, 12-P+A region entirely constituting a source region; 13-base region; 14-surface electrode.
Detailed Description
The present invention will be further described in detail by way of examples with reference to the accompanying drawings.
As shown in fig. 1, an SOI (Silicon-On-Insulator) based lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) applied to a flexible electronic system has a structure:
a substrate 1 of flexible material; flexible materials such as PDMS, PET, PI, PEN and the like can be adopted, and the substrate thickness of the flexible materials is 200-500 mu m;
the P-type silicon layer 2 is located on the surface of the substrate and has the thickness of 2-10 microns;
the SOI base 3 is located on the surface of the P-type silicon layer, and the thickness is 1-3 mu m;
a base region 13 and a drift region 4 which are formed on an epitaxial layer on an SOI base are respectively and oppositely arranged on the left side and the right side, and the thickness is 1-2 mu m;
a source region formed on the upper part of the base region and composed of P+Region 12 and N+Region 11, said P+Region 12 and N+The areas 11 are respectively and oppositely arranged at the left side and the right side;
a source electrode 10 located at a middle position of the surface of the source region;
at P+The surface electrode 14 on the left side of the region 12 is made of P + polysilicon materials, and the surface electrode 14 sequentially penetrates through the base region 13 and the SOI substrate 3 from the surface of the device along the longitudinal direction and penetrates into the upper part of the P-type silicon layer 2 by 0-1 mu m; the width of the surface electrode 14 is 1 μm;
at N+A gate oxide layer 8 and a gate electrode 9 on the surface of a base region 13 on the right side of the region 11;
an oxidation groove 7 (groove type oxidation region) filled with silicon dioxide and positioned on the surface of the middle region of the drift region 4; the left end of the oxidation groove 7 is 1-3 mu m away from the base region, the right end of the oxidation groove is 0-3 mu m away from the drain region, and the depth of the oxidation groove is 20-60% of the thickness of the drift region;
a drain region 5 (made of N + material) located on the right end surface of the drift region 4;
and a drain electrode 6 located on the surface of the drain region.
The device can be prepared by the following steps:
1) selecting suitable P-type silicon substrate material with SOI base, the typical doping concentration of the layer is 1 × 1013cm-3～1×1015cm-3The thickness can be reasonably set according to specific requirements; the thickness of the SOI base used as the buried oxide layer can be reasonable according to the requirements of breakdown voltage, bending diameter, bending times and the likeSetting;
2) the drift region and the base region are formed by doping an epitaxial layer on an SOI substrate, wherein the drift region has a typical doping concentration of 1 × 1015cm-3～1×1017cm-3The typical doping concentration of the base region is 1 × 1015cm-3～5×1017cm-3The thickness of the material can be reasonably set according to requirements;
3) a groove is formed in the drift region through etching, the width and the depth of the groove can influence the performances such as breakdown voltage, specific on-resistance and the like, and the groove can be reasonably arranged according to requirements;
4) growing silicon dioxide in the groove to serve as an oxidation groove in the drift region;
5) growing a layer of silicon dioxide as a gate dielectric material at the right end of the base region;
6) etching the left end of the base region, and forming a groove which can extend to the surface of the P-type substrate through the base region and the SOI base;
7) growing P + polysilicon in the trench as a surface electrode;
8) forming a source region and a drain region in the drift region and the base region by doping;
9) growing a layer of metal material on the middle part of the surface of the source region to serve as a source electrode, and growing a layer of metal material on the surface of the drain region to serve as a drain electrode;
10) growing a layer of polycrystalline silicon or metal material on the gate dielectric material to be used as a gate electrode;
11) and combining the processed SOI LDMOS with a flexible substrate through appropriate processes such as diamond grinding of the substrate, transfer printing and the like.
In the SOI (Silicon-On-Insulator) based lateral double-diffused metal oxide semiconductor Field effect transistor based On the flexible substrate of the embodiment, a power device SOI LDMOS having a technology of reducing a Surface electric Field in a conventional inorganic semiconductor is combined with the flexible substrate so as to be applied to a flexible electronic system, and the influence of missing a substrate electrode and reducing the Surface electric Field (Reduced Surface Field, abbreviated as RESURF) technology caused by substrate floating is relieved by adding an oxidation groove of a Surface electrode and a drift region, and the performance such as breakdown voltage of the device is improved by achieving the purpose of optimizing a lateral electric Field and a longitudinal electric Field.
The beneficial effects of the present embodiment are further illustrated by simulation and experimental data below.
FIG. 2 is a substrate thickness t sub15 μm, drift region length LDThe SOI LDMOS electric field profile of 4 μm, in which (a) is a surface electric field profile and (b) is a vertical electric field profile.
FIG. 3 is a substrate thickness t sub15 μm, drift region length LDBreakdown characteristics of the SOI LDMOS of 4 μm, wherein (a) is a simulation result graph (conventional structure BV 87.28V, substrate floating BV 72.18V); (b) the experimental results are shown (conventional structure BV is 80V, substrate floating BV is 68V).
As can be seen from the simulation result of fig. 2, after the conventional SOI LDMOS is combined with the flexible substrate, the substrate floats, and the substrate electrode and the longitudinal electric field are further lost, so that the RESURF technology originally provided disappears, and the surface electric field and the longitudinal electric field of the device are both deteriorated; meanwhile, as can be seen from the simulation and experiment results of fig. 3, the breakdown voltage of the conventional SOI LDMOS substrate after floating in the simulation is reduced by 17.36%, while the breakdown voltage is reduced by 15% according to experimental observation, and the simulation result and the experiment result are basically consistent.
Fig. 4 and 5 are simulation graphs of surface electric field, longitudinal electric field and breakdown voltage of four devices of a conventional SOI LDMOS, a substrate floating and surface electrode added SOI LDMOS, and a substrate floating and surface electrode and drift region oxidation trench added SOI LDMOS.
In FIG. 4, (a) is a surface electric field distribution diagram, and (b) is a longitudinal electric field distribution diagram. In fig. 5, the conventional structure BV is 87.28V, the substrate floating BV is 72.13V, the surface electrode BV is 87.28V, and the drift region oxide trench BV is 137.5V.
As can be seen from fig. 4, the surface electrode and the source electrode are connected together, so that the voltage is applied to the P-type silicon layer again, and the P-type silicon layer and the drift region generate a voltage drop to achieve the effect of electric field modulation, the RESURF technology can be recovered by the SOI LDMOS with the floating substrate, and the electric field distribution of the device is improved. As can be seen in FIG. 5, the breakdown voltage of the bottom floating SOI LDMOS increases to the conventional SOI LDMOS breakdown voltage after the bottom floating SOI LDMOS is provided with a surface electrode. After the drift region oxidation groove is added, the breakdown voltage is 57.54% higher than that of the conventional SOI LDMOS. Therefore, the adverse effects of electric field distribution and breakdown voltage deterioration after the conventional SOI LDMOS is applied to the field of flexible electronics are relieved.
Of course, the SOI LDMOS in the present invention may also be a P-channel, and the structure thereof is equivalent to that of an N-channel SOI LDMOS, which is not described herein again.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications may be made without departing from the technical principle of the present invention, and it is obvious that these modified embodiments also fall into the protection scope of the present invention.
Claims (10)
1. An SOI-based LDMOS device based on a flexible substrate, comprising:
a substrate (1) of flexible material;
a P-type silicon layer (2) located on the surface of the substrate;
an SOI base (3) located on the surface of the P-type silicon layer;
a base region (13) and a drift region (4) which are formed on an epitaxial layer on the SOI base are respectively and oppositely arranged on the left side and the right side;
a source region formed on the upper part of the base region and composed of P+Region (12) and N+Region (11) of said P+Region (12) and N+The areas (11) are respectively and oppositely arranged at the left side and the right side;
a source electrode (10) located at a position intermediate to the surface of the source region;
at P+A surface electrode (14) on the left side of the region (12), which sequentially penetrates through the base region (13) and the SOI base (3) from the surface of the device along the longitudinal direction and is deep into the upper part of the P-type silicon layer (2); the surface electrode (14) is connected with the source electrode (10) in common;
at N+A gate oxide layer (8) and a gate electrode (9) on the surface of the base region (13) on the right side of the region (11);
an oxidation groove (7) which is positioned on the surface of the middle area of the drift region (4) and is filled with insulating medium materials;
a drain region (5) located on the right end surface of the drift region (4);
and a drain electrode (6) located on the surface of the drain region.
2. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the substrate (1) made of the flexible material is made of PDMS, PET, PI or PEN.
3. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the surface electrode (14) adopts P+A polysilicon material.
4. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the doping concentration of the P-type silicon layer (2) is 1 multiplied by 1013cm-3～1×1015cm-3。
5. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the doping concentration of the drift region (4) is 1 x 1015cm-3～1×1017cm-3(ii) a The doping concentration of the base region (13) is 1 multiplied by 1015cm-3～5×1017cm-3。
6. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the thickness of the base region (13) and the thickness of the drift region (4) are both 1-2 mu m, the thickness of the SOI base (3) is 1-3 mu m, and the thickness of the P-type silicon layer (2) is 2-10 mu m.
7. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the surface electrode (14) is deep into the upper part of the P-type silicon layer (2) by 0-1 mu m.
8. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 or 7, wherein: the width of the surface electrode (14) is 1 μm.
9. The flexible substrate-based SOI-based LDMOS device set forth in claim 1 wherein: the length of the oxidation groove (7) is not more than that of the drift region (4), the left end of the oxidation groove is 1-3 mu m away from the base region, and the right end of the oxidation groove is 0-3 mu m away from the drain region; the depth of the oxidation groove (7) does not exceed the thickness of the drift region (4) and is 20-60% of the thickness of the drift region (4).
10. A method of fabricating the flexible substrate-based SOI-based LDMOS device of claim 1, comprising the steps of:
1) selecting a P-type silicon substrate material with an SOI base, wherein the P-type silicon substrate material is positioned on the back surface of the SOI base;
2) forming a drift region (4) and a base region (13) on an epitaxial layer on an SOI base by doping;
3) forming a trench in the drift region (4) by etching;
4) filling silicon dioxide in the groove to form an oxidation groove (7);
5) growing a layer of silicon dioxide on the right end of the base region to form a gate oxide layer (8);
6) etching the left end of the base region, and forming a groove which can extend to the upper part of the P-type silicon layer through the base region and the SOI base;
7) growing P in the trench+Polysilicon as a surface electrode (14);
8) forming source regions (11, 12) and drain regions (5) in the drift region and the base region by doping;
9) growing a layer of metal material on the middle position of the surface of the source region to serve as a source electrode (10), and growing a layer of metal material on the surface of the drain region to serve as a drain electrode (6);
10) growing a layer of polycrystalline silicon or a gate electrode (9) made of metal material on the gate oxide layer (8) to obtain the SOI-based LDMOS;
11) the processed SOI-based LDMOS is combined with a substrate (1) made of a flexible material through a diamond grinding P-type silicon layer (2) and a transfer printing process.
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