CN112635281A - Part and hole sealing method thereof, plasma processing device and working method thereof - Google Patents
Part and hole sealing method thereof, plasma processing device and working method thereof Download PDFInfo
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- CN112635281A CN112635281A CN201910903369.6A CN201910903369A CN112635281A CN 112635281 A CN112635281 A CN 112635281A CN 201910903369 A CN201910903369 A CN 201910903369A CN 112635281 A CN112635281 A CN 112635281A
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000007789 sealing Methods 0.000 title claims abstract description 26
- 239000011148 porous material Substances 0.000 claims abstract description 95
- 238000000576 coating method Methods 0.000 claims abstract description 85
- 239000011248 coating agent Substances 0.000 claims abstract description 84
- 229920001169 thermoplastic Polymers 0.000 claims abstract description 84
- 230000003647 oxidation Effects 0.000 claims abstract description 63
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000010407 anodic oxide Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 118
- 230000008569 process Effects 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 230000008439 repair process Effects 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 18
- 239000007789 gas Substances 0.000 description 19
- 230000007797 corrosion Effects 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000012466 permeate Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 150000003384 small molecules Chemical class 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a part and a hole sealing method thereof, a plasma processing device and a working method thereof, wherein the hole sealing method is used for an anodic oxide layer of the part of the plasma processing device, the part of the plasma processing device also comprises a substrate, the anodic oxide layer is positioned on the surface of the substrate, and a thermoplastic polymer coating is formed on the surface of the anodic oxide layer; after the thermoplastic polymer coating is formed, heating the parts of the plasma processing device to convert the thermoplastic polymer coating into a high-elasticity state, wherein in the heating process, the anodic oxidation layer generates cracks and pores, and the high-elasticity thermoplastic polymer coating flows into the cracks and the pores. The invention has double anti-corrosion function due to the thermoplastic polymer coating positioned in the cracks and the pores and on the surface of the anodic oxidation layer, and the anti-corrosion performance of the parts of the plasma processing device is obviously improved.
Description
Technical Field
The invention relates to the field of plasma processing devices, in particular to a part and a hole sealing method thereof, a plasma processing device and a working method thereof.
Background
Aluminum materials are widely used as materials for manufacturing parts of plasma processing apparatuses in plasma processing apparatuses because of their characteristics of good conductive properties, easy manufacturing, and availability at a reasonable price. However, aluminum itself is liable to react with an etching gas such as chlorine gas, causing corrosion of the plasma processing apparatus parts themselves and becoming a source of particle contaminants in the reaction chamber.
In order to avoid corrosion of aluminum material by corrosive gas, a protection method of forming an anodic oxidation layer on the surface of aluminum material is generally adopted at present to try to solve the problem of corrosion of aluminum material by corrosive gas such as chlorine gas. Aluminum anodization is a typical electrolytic oxidation process, i.e., a process of using an aluminum material as an anode, placing the aluminum material in an electrolyte solution for electrification, and forming a porous anodized aluminum coating on the surface of the aluminum material by electrolysis.
However, in the practical application process, the problem that the protection method of making the anodic oxidation layer on the surface of the aluminum material still has corrosion is found. The reason is that: the anodic oxidation layer has cracks and pores under most conditions in the production process, and particularly when the anodic oxidation layer is used in a region with a certain temperature, the anodic oxidation layer has cracks and pores which are diffused and new cracks and pores are generated. Corrosive gases such as chlorine and the like can permeate into the anodic oxidation layer along the cracks and finally corrode the aluminum material substrate, so that the corrosion resistance and the multiple reliability of the parts of the plasma processing device are reduced, and the service range and the service life of the parts of the plasma processing device are simultaneously reduced.
Disclosure of Invention
The invention aims to provide a part and a hole sealing method thereof, a plasma processing device and a working method thereof, which are used for effectively sealing cracks and pores of an anodic oxide layer on the surface of the part of the plasma processing device, are not limited by the shape and the structure of the part of the plasma processing device and improve the corrosion resistance of the part exposed to corrosive gas in the plasma processing device.
In order to achieve the above object, the present invention provides a method for sealing an anodic oxide layer of a plasma processing device component, the plasma processing device component further comprises a substrate, the anodic oxide layer is located on the surface of the substrate, and a thermoplastic polymer coating is formed on the surface of the anodic oxide layer; after the thermoplastic polymer coating is formed, heating the parts of the plasma processing device to convert the thermoplastic polymer coating into a high-elasticity state, wherein in the heating process, the anodic oxidation layer generates cracks and pores, and the high-elasticity thermoplastic polymer coating flows into the cracks and the pores.
The method for sealing the anodic oxide layer of the plasma processing device component, wherein the thermoplastic polymer coating comprises the following materials: acrylic or epoxy.
The method for sealing the anodic oxide layer of the plasma processing device part comprises the steps that when the plasma processing device part is provided with air holes, the anodic oxide layer is positioned on the inner side wall of the air holes; the forming method of the thermoplastic polymer coating comprises the following steps: providing a thermoplastic polymer solution; and pouring the thermoplastic polymer solution into the pores to prepare a thermoplastic polymer coating on the surface of the anodic oxidation layer.
In the above method for sealing an anodic oxide layer of a plasma processing device component, the aspect ratio of the pores is greater than or equal to 18: 1.
The method for sealing the anodic oxide layer of the plasma processing device component is characterized in that the heating temperature is 50-180 ℃.
The invention also provides a component for a plasma processing apparatus as described above, comprising: a substrate; the anodic oxidation layer covers the surface of the substrate, and cracks and pores are formed in the anodic oxidation layer; and the thermoplastic polymer coating is filled in the cracks and the pores and covers the surface of the anodic oxidation layer.
The above component for a plasma processing apparatus, wherein the component for a plasma processing apparatus comprises: one or more of a mounting substrate, a gas distribution plate, and a liner.
The present invention also provides a plasma processing apparatus including components of the plasma processing apparatus, comprising: the plasma processing device comprises a reaction cavity, a substrate and a processing unit, wherein a plasma environment is arranged in the reaction cavity, and a base is arranged at the bottom in the reaction cavity and used for bearing the substrate to be processed; the parts of the plasma processing device are partially positioned in the plasma environment.
The plasma processing apparatus including the plasma processing apparatus component, wherein when the plasma processing apparatus is an inductively coupled plasma processing apparatus, the plasma processing apparatus component includes a liner; the inner liner comprises a side wall ring and a bearing ring which is positioned at the top of the side wall ring and extends outwards, the side wall ring is sleeved on the inner side wall of the reaction chamber, and the bearing ring is loaded on the side wall of the reaction chamber.
In the plasma processing apparatus including the plasma processing apparatus component, when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the plasma processing apparatus component includes a mounting substrate and a gas distribution plate; the mounting substrate is arranged at the top of the reaction chamber; the gas distribution plate is disposed above the mounting substrate.
When the plasma processing device component is a mounting substrate, the mounting substrate has a plurality of air holes, the inner side walls of the air holes have anodic oxidation layers, and the anodic oxidation layers have cracks and pores; and the thermoplastic polymer coating is positioned in the cracks and the pores and positioned on the surface of the anodic oxidation layer.
The invention also provides a working method of the plasma processing device, which comprises the following steps: providing the plasma processing apparatus; providing a substrate to be processed; and placing the substrate to be processed on a base, and carrying out a plasma processing process on the surface of the substrate to be processed.
The working method of the plasma processing apparatus described above, wherein the temperature of the plasma processing process is: 50-160 ℃.
In the working method of the plasma processing device, during the plasma processing process, the anodized layer generates new cracks and pores, and the thermoplastic polymer coating dynamically repairs the new cracks and pores.
Compared with the prior art, the invention has the following beneficial effects:
according to the hole sealing method for the anodic oxide layer of the plasma processing device part, the thermoplastic polymer coating is coated on the surface of the anodic oxide layer, the thermoplastic polymer coating is converted from a glass state to a high-elasticity state under the action of heating, the high-elasticity thermoplastic polymer coating has good fluidity, and the thermoplastic polymer coating can flow into cracks and pores in the anodic oxide layer, so that the cracks and the pores of the anodic oxide layer can be filled.
Further, the anode oxide layer crack and pore filling scheme is not limited by the shape of the plasma processing device component, for example, the plasma processing device component is provided with a plurality of air holes, and the inner side walls of the air holes are covered with the anode oxide layer. And forming a thermoplastic polymer coating on the surface of the anodic oxidation layer in a pouring mode so as to seal cracks and pores in the anodic oxidation layer. Therefore, the thermoplastic polymer coating can not only completely cover the inner wall of the pore with small aperture and large depth, but also seal the cracks and pores of the anodic oxide layer, and improve the corrosion resistance of the plasma processing device parts with the pore.
In the working method of the plasma processing device provided by the invention, new cracks and pores can be generated on the anodic oxide layer due to the high-temperature process of the plasma processing process, the thermoplastic polymer coating becomes in a high-elasticity state under the high-temperature environment of the plasma processing process, and the high-elasticity thermoplastic polymer coating has good fluidity, so that the thermoplastic polymer coating can continuously permeate into the newly generated cracks and pores of the anodic oxide layer, and therefore, the thermoplastic polymer coating can realize the online dynamic repair of the anodic oxide layer. In addition, the self-repairing of the thermoplastic polymer coating can be realized, and the full coverage of the thermoplastic polymer coating on the surface of the part in the using process is ensured. The hole sealing method provided by the invention has the advantages of simple process, easy implementation and low cost, and can be widely applied to processing and manufacturing of parts of a plasma processing device.
Drawings
FIG. 1 is a flow chart of the method for sealing an anodic oxide layer of a plasma processing apparatus component according to the present invention;
FIGS. 2 to 3 are schematic structural diagrams illustrating steps of the method for sealing an anodic oxide layer of a component of a plasma processing apparatus according to the present invention;
FIG. 4 is a scanning electron microscope photograph of the surface morphology of the anodized layer of the plasma treatment device parts before sealing holes;
FIG. 5 is a scanning electron microscope photograph of the surface morphology of the anodized layer of the plasma treatment device parts after sealing the holes.
Detailed Description
The invention will be further described by the following specific examples in conjunction with the drawings, which are provided for illustration only and are not intended to limit the scope of the invention.
The plasma processing device part applied to the plasma processing device comprises a substrate 1 and an anodic oxidation layer 2 positioned on the surface of the substrate 1, wherein cracks and pores 2 'can occur on the anodic oxidation layer 2 under most conditions in the production process, particularly in the high-temperature process of the plasma processing process, the anodic oxidation layer 2 can also generate the diffusion of the cracks and pores 2' and generate new cracks and pores 2 ', the substrate 1 is usually made of aluminum materials or aluminum alloy materials, and corrosive gas such as chlorine can penetrate into the cracks and pores 2' in the anodic oxidation layer 2 to further cause the substrate 1 of the plasma processing device part to corrode, and finally the service life of the plasma processing device part is seriously shortened.
In view of this problem, as shown in fig. 1, the present invention provides a method for sealing an anodic oxide layer 2 of a component of a plasma processing apparatus, the structure of the component of the plasma processing apparatus before being subjected to the sealing method of the present invention is shown in fig. 2, the sealing method comprising the steps of: step S1: forming a thermoplastic polymer coating 3 on the surface of the anodic oxidation layer 2; step S2: after the thermoplastic polymer coating 3 is formed, the plasma processing device component is subjected to a heating treatment, so that the thermoplastic polymer coating 3 is converted from a glass state to a high-elasticity state, in the heating treatment process, the anodized layer 2 generates cracks and pores 2 ', and the high-elasticity thermoplastic polymer coating 3 has good fluidity, so that the thermoplastic polymer coating 3 can flow into the cracks and pores 2 ' in the anodized layer 2, and therefore, the cracks and pores 2 ' in the anodized layer 2 can be filled, and the structure of the plasma processing device component after sealing is shown in fig. 3. To verify the conclusion, fig. 4 and fig. 5 respectively show the scanning electron microscope photographs of the surface morphology of the anodized layer 2 of the plasma processing apparatus component before and after sealing, and it can be seen that the thermoplastic polymer coating 3 achieves effective filling of cracks and gaps in the anodized layer 2 of the plasma processing apparatus component after heat treatment.
Further, the material of the thermoplastic polymer coating layer 3 preferably includes acrylic resin or epoxy resin having thermoplasticity. The acrylic resin or epoxy resin with thermoplasticity has small molecules and low viscosity, so that the thermoplastic polymer coating 3 can not only cover the surface of the anodic oxide layer 2, but also can permeate into cracks and pores 2 'of the anodic oxide layer 2 to fill the cracks and the pores 2', the implementation of a coating process is facilitated, and the coating is cheap and easy to obtain, so that the coating has high popularization and application values.
Further, after the thermoplastic polymer coating layer 3 is formed, the temperature for heat treatment of the plasma treatment apparatus component is controlled to 50 ℃ to 180 ℃. When the temperature of the heating treatment is lower than 50 ℃, the thermoplastic polymer coating 3 cannot be converted from a glass state to a high elastic state, and further cannot cover the surface of the anodic oxide layer 2 and cannot penetrate into cracks and pores 2' of the anodic oxide layer 2; when the temperature of the heat treatment is higher than 180 ℃, the thermoplastic polymer coating 3 will be decomposed due to the high temperature, and also cannot cover the surface of the anodized layer 2, and cannot penetrate into cracks and pores 2' of the anodized layer 2. Only when the temperature of the heating treatment is controlled between 50 ℃ and 180 ℃, the thermoplastic polymer coating 3 can not only cover the surface of the anodic oxidation layer 2, but also can penetrate into cracks and pores 2 'of the anodic oxidation layer 2 to fill the cracks and the pores 2'.
Further, the anodized layer 2 crack and void 2' filling scheme is not limited by the shape of the plasma treatment apparatus parts. For example, when the plasma processing apparatus component has a gas hole, the anodized layer 2 is located on the inner side wall of the gas hole; the method for forming the thermoplastic polymer coating 3 comprises the following steps: providing a thermoplastic polymer solution; and (3) pouring the thermoplastic polymer solution into the pores, and preparing a thermoplastic polymer coating 3 on the surface of the anodic oxidation layer 2 so as to seal cracks and pores 2' in the anodic oxidation layer 2. Therefore, the thermoplastic polymer coating 3 can not only completely cover the inner wall of the pore with small pore diameter and large depth, but also seal the cracks and pores 2' of the anodic oxidation layer 2, thereby improving the corrosion resistance of the plasma processing device parts with the pore.
Further, in order to make the thermoplastic polymer solution more easily poured into the pores, completely cover the surface of the anodized layer 2, and further permeate into the cracks and pores 2 ' of the anodized layer 2, the aspect ratio of the pores of the plasma processing device component is preferably greater than or equal to 18:1, for example, for the pores with a depth of 36mm and a diameter of 3mm on the plasma processing device component, yttrium oxide or teflon is difficult to cover the inner side walls of the pores, the filling scheme of the cracks and pores 2 ' of the anodized layer 2 of the present invention can form the thermoplastic polymer coating 3 on the surface of the anodized layer 2 on the inner side walls of the pores by directly pouring, and seal the cracks and pores 2 ' in the anodized layer 2.
Further, the present invention provides a component for a plasma processing apparatus as described above, comprising: a substrate 1; an anodic oxidation layer 2 covering the surface of the substrate 1, wherein the anodic oxidation layer 2 is provided with cracks and pores 2'; the thermoplastic polymer coating 3 is filled in the cracks and the pores 2' and covers the surface of the anodic oxidation layer 2. The thermoplastic polymer coating 3 has small molecules and low viscosity, so that the thermoplastic polymer coating 3 can not only cover the surface of the anodic oxidation layer 2, but also permeate into cracks and pores 2 'of the anodic oxidation layer 2 to fill the cracks and the pores 2'. Therefore, even if the thermoplastic polymer coating 3 on the surface of the anodized layer 2 is scratched to expose the anodized layer 2, the cracks and the pores 2 ' are filled with the thermoplastic polymer coating 3, so that the corrosive gas is difficult to contact the body of the component through the cracks and the pores 2 ', and the body of the component of the plasma processing apparatus can be prevented from being corroded, so that the thermoplastic polymer coating 3 in the cracks and the pores 2 ' and on the surface of the anodized layer 2 has a double anti-corrosion function.
Further, the plasma processing apparatus component includes: one or more of a mounting substrate, a gas distribution plate, and a liner. The dual corrosion protection effect of the mounting substrate, the gas distribution plate or the lining exposed to the corrosive gas environment is achieved by adopting the scheme of filling cracks and pores 2' in the anodic oxidation layer 2 on the surface of the mounting substrate, the gas distribution plate or the lining.
The corrosion resistance of the coating on the substrate 1 of the plasma processing apparatus component can be tested by a method called "hydrogen bubble test". In particular, the purpose of this test is to infer the integrity of the coating over the substrate 1 by measuring the time during which the coating over the substrate 1 is broken by the hydrochloric acid applied to its surface. In this bubble test, when the coating over the substrate 1 fails, hydrochloric acid reacts directly with the coating over the substrate 1 to generate hydrogen bubbles until the time to generate continuous hydrogen bubbles is determined.
In order to verify the corrosion resistance of the parts of the plasma processing device after being processed by the scheme for filling the cracks and the pores 2 ' of the anodic oxidation layer 2, one part of the anodic oxidation layer 2 on the surface of the substrate 1 of the parts of the plasma processing device is processed by the scheme for filling the cracks and the pores 2 ' of the anodic oxidation layer 2, and the other part is not processed by the scheme for filling the cracks and the pores 2 ' of the anodic oxidation layer 2; and then performing hydrogen bubble test on the parts of the plasma processing device. The experimental results show that the failure time of the coating on the substrate 1 after treatment with the anodized layer 2 crack and pore 2 ' fill scheme of the invention increased from 0.1 hours to 28 hours compared to the coating on the substrate 1 without the anodized layer 2 crack and pore 2 ' fill scheme of the invention, thereby demonstrating that the anodized layer 2 crack and pore 2 ' fill scheme of the invention significantly improves the corrosion resistance of plasma processing apparatus parts.
Further, the present invention provides a plasma processing apparatus including the plasma processing apparatus components, comprising: the plasma processing device comprises a reaction cavity, a substrate and a processing unit, wherein a plasma environment is arranged in the reaction cavity, and a base is arranged at the bottom in the reaction cavity and used for bearing the substrate to be processed; the parts of the plasma processing device are partially positioned in the plasma environment. When the plasma processing device is an inductively coupled plasma processing device, parts of the plasma processing device comprise a lining; the inner liner comprises a side wall ring and a bearing ring which is positioned at the top of the side wall ring and extends outwards, the side wall ring is sleeved on the inner side wall of the reaction chamber, and the bearing ring is loaded on the side wall of the reaction chamber. When the plasma processing device is a capacitive coupling plasma processing device, the parts of the plasma processing device comprise a mounting substrate and a gas distribution plate; the mounting substrate is arranged at the top of the reaction chamber; the gas distribution plate is disposed above the mounting substrate. The plasma processing device provided by the invention uses the parts of the plasma processing device processed by the scheme of filling the cracks and the holes 2' in the anodic oxidation layer 2, so the corrosion problem is effectively avoided.
Further, when the plasma processing device component is a mounting substrate, the mounting substrate is provided with a plurality of air holes, the inner side walls of the air holes are provided with anodic oxidation layers 2, and cracks and pores 2' are arranged in the anodic oxidation layers 2; a thermoplastic polymer coating 3 located in the cracks and pores 2' and on the surface of the anodized layer 2. When the anodic oxidation layer 2 cracks and pores 2 'are filled on the mounting substrate, the thermoplastic polymer coating 3 can be directly formed on the surface of the anodic oxidation layer 2 in a pouring mode so as to seal the cracks and pores 2' in the anodic oxidation layer 2. Therefore, the thermoplastic polymer coating 3 can not only completely cover the inner wall of the pore with small pore diameter and large depth, but also seal the cracks and pores 2' of the anodic oxidation layer 2, thereby improving the corrosion resistance of the mounting substrate.
Further, the present invention also provides a method for operating a plasma processing apparatus, comprising: providing the plasma processing apparatus; providing a substrate to be processed; and placing the substrate to be processed on a base, and carrying out a plasma processing process on the surface of the substrate to be processed. In general. The temperature of the plasma treatment process is as follows: 50-160 ℃. The anodic oxidation layer 2 can generate new cracks and pores 2 'due to the high-temperature process of the plasma treatment process, the thermoplastic polymer coating 3 is changed into a high-elasticity state under the high-temperature environment of the plasma treatment process, the high-elasticity thermoplastic polymer coating 3 has good fluidity, and the thermoplastic polymer coating 3 can continuously permeate into the newly generated cracks and pores 2' of the anodic oxidation layer 2, so that the thermoplastic polymer coating 3 can realize the online dynamic repair of the anodic oxidation layer 2. In addition, the self-repairing of the thermoplastic polymer coating 3 can be realized, and the full coverage of the thermoplastic polymer coating 3 on the surface of the part in the using process is ensured.
In summary, the thermoplastic polymer coating has small molecules and low viscosity, so that the thermoplastic polymer coating can not only cover the surface of the anodic oxide layer, but also permeate into cracks and pores of the anodic oxide layer to fill the cracks and pores. Therefore, even if the thermoplastic polymer coating on the surface of the anodic oxidation layer is scratched to expose the anodic oxidation layer, the cracks and the pores are filled with the thermoplastic polymer coating, so that corrosive gas is difficult to contact the body of the part through the cracks and the pores, and the body of the part of the plasma processing device can be prevented from being corroded, so that the thermoplastic polymer coating in the cracks and the pores and on the surface of the anodic oxidation layer has a double anti-corrosion effect. In the process of the high-temperature process of the plasma processing device, even if new cracks and pores are generated on the anodic oxidation layer, the new cracks and pores can be continuously and automatically penetrated into the new cracks and pores after the new cracks and pores are converted into the high-elasticity thermoplastic polymer coating, so that the online dynamic repair of the anodic oxidation layer can be realized by the thermoplastic polymer coating. In addition, the self-repairing of the thermoplastic polymer coating can be realized, and the full coverage of the thermoplastic polymer coating on the surface of the part in the using process is ensured.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims. Furthermore, any reference signs in the claims shall not be construed as limiting the claim concerned; the word "comprising" does not exclude the presence of other elements or steps than those listed in a claim or the specification.
Claims (14)
1. A hole sealing method for an anodic oxidation layer of a plasma processing device part, wherein the plasma processing device part also comprises a substrate, the anodic oxidation layer is positioned on the surface of the substrate, and is characterized in that a thermoplastic polymer coating is formed on the surface of the anodic oxidation layer; after the thermoplastic polymer coating is formed, heating the parts of the plasma processing device to convert the thermoplastic polymer coating into a high-elasticity state, wherein in the heating process, the anodic oxidation layer generates cracks and pores, and the high-elasticity thermoplastic polymer coating flows into the cracks and the pores.
2. The method for sealing an anodized layer formed on a part of a plasma processing apparatus according to claim 1, wherein the thermoplastic polymer coating layer comprises: acrylic or epoxy.
3. The method of claim 1, wherein when the plasma processing apparatus component has a gas hole, the anodic oxide layer is located on an inner side wall of the gas hole; the forming method of the thermoplastic polymer coating comprises the following steps: providing a thermoplastic polymer solution; and pouring the thermoplastic polymer solution into the pores to prepare a thermoplastic polymer coating on the surface of the anodic oxidation layer.
4. The method of claim 3, wherein the aspect ratio of the pores is 18:1 or greater.
5. The method for sealing an anodized layer used for parts of a plasma processing apparatus according to claim 1, wherein the temperature of the heat treatment is 50 ℃ to 180 ℃.
6. A component for a plasma processing apparatus according to any one of claims 1 to 5, comprising:
a substrate;
the anodic oxidation layer covers the surface of the substrate, and cracks and pores are formed in the anodic oxidation layer;
and the thermoplastic polymer coating is filled in the cracks and the pores and covers the surface of the anodic oxidation layer.
7. The component for a plasma processing apparatus as recited in claim 6, wherein said component for a plasma processing apparatus comprises: one or more of a mounting substrate, a gas distribution plate, and a liner.
8. A plasma processing apparatus including components of the plasma processing apparatus, comprising: the plasma processing device comprises a reaction cavity, a substrate and a processing unit, wherein a plasma environment is arranged in the reaction cavity, and a base is arranged at the bottom in the reaction cavity and used for bearing the substrate to be processed; the plasma processing apparatus component of claim 6, partially located within the plasma environment.
9. The plasma processing apparatus comprising a plasma processing apparatus component of claim 8, wherein the plasma processing apparatus component comprises a liner when the plasma processing apparatus is an inductively coupled plasma processing apparatus; the inner liner comprises a side wall ring and a bearing ring which is positioned at the top of the side wall ring and extends outwards, the side wall ring is sleeved on the inner side wall of the reaction chamber, and the bearing ring is loaded on the side wall of the reaction chamber.
10. The plasma processing apparatus comprising the plasma processing apparatus component of claim 8, wherein the plasma processing apparatus component comprises a mounting substrate and a gas distribution plate when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus; the mounting substrate is arranged at the top of the reaction chamber; the gas distribution plate is disposed above the mounting substrate.
11. The plasma processing apparatus comprising a plasma processing apparatus component according to claim 10, wherein when the plasma processing apparatus component is a mounting substrate, the mounting substrate has a plurality of air holes, inner side walls of the air holes have an anodized layer, and cracks and pores are formed in the anodized layer; and the thermoplastic polymer coating is positioned in the cracks and the pores and positioned on the surface of the anodic oxidation layer.
12. A method of operating a plasma processing apparatus, comprising: providing a plasma processing apparatus as recited in claim 8; providing a substrate to be processed; and placing the substrate to be processed on a base, and carrying out a plasma processing process on the surface of the substrate to be processed.
13. The method of claim 12, wherein the plasma processing process temperature is: 50-160 ℃.
14. The method of claim 13, wherein the anodized layer creates new cracks and pores during the plasma treatment process, and the thermoplastic polymer coating dynamically repairs the new cracks and pores.
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| CN201910903369.6A CN112635281B (en) | 2019-09-24 | 2019-09-24 | Component, hole sealing method thereof, plasma processing device and working method thereof |
| TW109127266A TWI761907B (en) | 2019-09-24 | 2020-08-12 | Parts for plasma processing apparatus and method for sealing holes thereof, plasma processing apparatus and working method thereof |
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| CN201910903369.6A CN112635281B (en) | 2019-09-24 | 2019-09-24 | Component, hole sealing method thereof, plasma processing device and working method thereof |
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| JPH06184793A (en) * | 1992-12-21 | 1994-07-05 | Mitsubishi Heavy Ind Ltd | Surface treatment of aluminum alloy product |
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| CN104517797A (en) * | 2013-10-03 | 2015-04-15 | 东京毅力科创株式会社 | Plasma treatment device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201100578A (en) * | 2009-06-19 | 2011-01-01 | Saint Gobain Ceramics & Plastics Inc | Sealed plasma coatings |
| US9604249B2 (en) * | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
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| JPH06184793A (en) * | 1992-12-21 | 1994-07-05 | Mitsubishi Heavy Ind Ltd | Surface treatment of aluminum alloy product |
| JPH09316693A (en) * | 1996-05-29 | 1997-12-09 | Sky Alum Co Ltd | Fluororesin-coated aluminum alloy member and its production |
| JPH11104560A (en) * | 1997-10-03 | 1999-04-20 | Sky Alum Co Ltd | Resin coated aluminum alloy member and its production |
| JP2002155397A (en) * | 2000-07-31 | 2002-05-31 | Mitsubishi Plastics Ind Ltd | Thermoplastic resin-coated aluminum sheet, and molding thereof |
| JP2003301296A (en) * | 2002-04-12 | 2003-10-24 | Mitsubishi Plastics Ind Ltd | Aluminum plate to be covered with thermoplastic resin film, aluminum plate covered with thermoplastic resin film, and molded item thereof |
| CN1516535A (en) * | 2002-11-28 | 2004-07-28 | ���������ƴ���ʽ���� | Plasma processing container internal parts |
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| Publication number | Publication date |
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| TWI761907B (en) | 2022-04-21 |
| TW202113164A (en) | 2021-04-01 |
| CN112635281B (en) | 2024-04-05 |
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