CN112608143A - Preparation method of slurry for ITO target slip casting process - Google Patents
Preparation method of slurry for ITO target slip casting process Download PDFInfo
- Publication number
- CN112608143A CN112608143A CN202110070023.XA CN202110070023A CN112608143A CN 112608143 A CN112608143 A CN 112608143A CN 202110070023 A CN202110070023 A CN 202110070023A CN 112608143 A CN112608143 A CN 112608143A
- Authority
- CN
- China
- Prior art keywords
- ito
- powder
- slurry
- ball
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
Abstract
The invention relates to the field of preparation and forming of photoelectric materials, in particular to a preparation method of slurry for an ITO target material slip casting process. The method prepares the ITO slurry from the oxidized and tin oxide powder by four steps of mechanical mixing, airflow crushing, sanding and vacuum treatment, and the obtained ITO slurry can be directly used for preparing and processing the ITO target. The method has the advantages of short preparation time, small slurry pollution, small particle size range of prepared slurry powder and the like.
Description
Technical Field
The invention relates to the field of preparation and forming of photoelectric materials, in particular to a preparation method of slurry for an ITO target material slip casting process.
Background
In recent years, Indium Tin Oxide (ITO) films prepared from indium tin oxide have the advantages of transparency to visible light, conductivity, high hardness, corrosion resistance and wear resistance, and are widely used in industry. Especially with the high-speed development of FPD industry, ITO target material gets more and more applications in FPD industry, in addition to LCD industry, ITO target material also applies to fields such as electroluminescent sheet (EL), Touch screen (Touch Panel), etc., in addition ITO film glass still has unique performance, not only can play the thermal-insulated effect of cooling as the face heating element, and can defrost and ice after the circular telegram is heated, it is widely used in car, train, agricultural machinery, ship as windshield glass, in addition based on these properties of ITO film, if used as the curtain wall of the building, can also play the thermal-insulated effect of resisting cold, through utilizing to ITO film to the decay nature of microwave at the same time, can be used in the transparent window of the electromagnetic shield, etc., with the continuous development of the scientific and technological level, ITO film can also be used in the fields such as protective mirror, etc. in the future. The ITO thin film is generally formed by sputtering an ITO target onto a substrate by a magnetron sputtering method.
At present, the production process of the ITO target material comprises a normal pressure sintering method, a hot isostatic pressing method, a hot pressing method and a slip casting-aerobic sintering method. The traditional normal pressure sintering process can not obtain high-density ITO target material and can not meet the production requirement. The hot isostatic pressing process has the disadvantages of high sheath difficulty, high equipment investment and low production efficiency. When the ITO target material is prepared by a hot pressing method, the requirements on the thermal stress field and the temperature field of hot pressing equipment are high, and thermal stress cracking is easy to occur in the sintering process. The ITO target prepared by the slip casting-aerobic sintering method has uniform components and good film coating effect, and is suitable for batch production. The preparation of the ITO slurry is used as an important part in the slip casting-aerobic sintering process, and the performance of the ITO slurry directly influences the quality of the ITO target.
At present, the preparation method of the ITO slurry mainly comprises the step of mixing and refining indium oxide powder and tin oxide powder by a ball milling method to prepare the ITO slurry. Two major problems currently exist with this approach: firstly, the preparation time is long, the original indium oxide powder and tin oxide powder have larger diameter particles and need to be refined by ball milling, and the preparation of the slurry meeting the target material slip casting requirement needs to be carried out for 72 hours or even longer; in addition, the grinding material is seriously polluted, and because the ITO slurry needs to be ball-milled for a long time, the grinding balls are abraded due to the collision among the grinding balls in the ball-milling process, so that the slurry is seriously polluted.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of slurry for an ITO target material slip casting process. The method prepares indium oxide and tin oxide powder into ITO slurry through four steps of mechanical mixing, airflow crushing, sanding and vacuum treatment, and the obtained ITO slurry can be directly used for preparing and processing ITO target materials. Has the advantages of short preparation time, small slurry pollution, small particle size range of prepared slurry powder and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of slurry for an ITO target slip casting process comprises four processes of mechanical mixing, airflow crushing, sanding and vacuum treatment, and specifically comprises the following steps:
(1) mechanically mixing indium oxide powder and tin oxide powder: indium oxide powder and tin oxide powder are mixed according to the mass ratio of 8.5-9: 1.5-1, putting the prepared ITO powder into a mixing stirrer for mixing, and stirring for 20-30min to preliminarily mix the indium oxide powder and the tin oxide powder;
(2) and (3) airflow crushing treatment: placing the mixed ITO powder into an impact type jet mill for further crushing, wherein an impact plate used in the jet mill is an ITO plate, screening the crushed ITO powder through a screening machine, carrying out next treatment on the powder with the particle size smaller than 1 mu m, and placing the powder larger than 1 mu m into the jet mill again for secondary crushing;
(3) sanding treatment: placing the screened ITO powder into a sand mill, adding water, a dispersing agent and a grinding ball, wherein the grinding ball is ITO, the rotating speed of the ball mill is controlled at 800-1200rpm, and the grinding time is 8-10h, so that ITO slurry with the powder particle size of 200-250nm is obtained;
(4) and (3) vacuum treatment: and sequentially carrying out mechanical pump vacuum pumping treatment and molecular pump vacuum pumping treatment on the sanded ITO slurry, wherein the treated slurry can be directly used in the ITO target material slip casting process.
In the present invention, the water is preferably deionized water.
In the invention, the dispersing agent is preferably formed by mixing allyl amine polyoxyethylene ether, methacrylic acid and ammonium polyacrylate, wherein the mass percent of the allyl amine polyoxyethylene ether is preferably 55-60%, the mass percent of the methacrylic acid is preferably 15-20%, and the mass percent of the polyacrylamide is preferably 20-25%.
In the present invention, the mass ratio of the total mass of the mixed powder containing tin oxide and indium oxide to water is preferably (3 to 5): 1, more preferably 4: 1; the mass ratio of the total mass of the mixed powder containing tin oxide and indium oxide to the dispersing agent is preferably 1 (0.03-0.05), and more preferably 1: 0.045.
In the invention, the grinding ball is made of specially-made ITO (indium tin oxide) grinding balls, so that the pollution of the grinding ball in the ball milling process is avoided, the ball material ratio is controlled to be 3-5: 1, more preferably 5:1, the mass ratio of large, medium and small balls of the grinding ball is 1:1:2, wherein the diameter of the large ball is 5mm, the diameter of the medium ball is 3mm, and the diameter of the small ball is 1 mm.
In the invention, the time for pumping vacuum by the mechanical pump is preferably 20-40 min, and more preferably 40 min; the vacuum degree of the system after the mechanical pump is pumped to vacuum is preferably 0.5-1 kPa, and more preferably 0.5 kPa; the molecular pump pumps the vacuum degree to 5-8 x 10-3And after Pa, continuously vacuumizing for 60-90 min, and preferably for 90 min. In the invention, the mechanical pump is used for pumping vacuum firstly, so that the vacuum degree accords with the working range of the molecular pump, then the molecular pump is used for pumping vacuum, the gas in the mixed slurry can be thoroughly removed by adopting the vacuum treatment mode, and the phenomenon that the product quality is influenced by bubbles generated when the mixed slurry is subsequently injected into a mould by pressure is avoided.
Due to the technical scheme, the invention has the following positive effects:
1. according to the invention, through the treatment of the air flow crushing and sand milling processes, the time required for refining the powder is greatly shortened, the time required for refining the powder by the original ball milling needs 72 hours or even longer, and the process only needs 8-10 hours.
2. In the jet milling process, the impact plate is an ITO plate; in the sand grinding process, the grinding ball is made of ITO (indium tin oxide) grinding balls, so that the pollution of equipment in the preparation process to slurry is greatly reduced.
3. The invention carries out vacuum treatment after the sanding process, thoroughly removes the gas in the mixed slurry, and avoids the occurrence of bubbles in the subsequent grouting forming process so as to influence the quality of the target material.
4. The particle size of the slurry powder obtained by the jet milling and sand milling processes is 150-250 nm, the particle size of the powder is small, the particle size range of the powder is small, and therefore the prepared ITO target material is high in density.
Drawings
FIG. 1 is a graph showing a distribution of particle sizes of ITO slurries prepared in example 1.
FIG. 2 is a graph showing a distribution of particle sizes of ITO slurries prepared in example 2.
Detailed Description
For further disclosure, but not limitation, the present invention is described in further detail below with reference to examples.
Example 1
1. Mechanically mixing indium oxide powder and tin oxide powder: indium oxide powder and tin oxide powder are mixed according to the mass ratio of 9: 1, preparing, namely putting prepared ITO powder into a mixing stirrer for mixing, and stirring for 30min to preliminarily mix indium oxide powder and tin oxide powder;
2. and (3) airflow crushing treatment: placing the mixed ITO powder into an impact type jet mill for further crushing, wherein an impact plate used in the jet mill is an ITO plate, placing the crushed ITO powder into a screening machine for screening, carrying out next treatment when the particle size of the powder is smaller than 1 mu m, and placing the powder larger than 1 mu m into the jet mill again for secondary crushing; wherein the flow range of the high-pressure air supplied by the jet mill is 6-8 Nm3/min, and the feeding rate is 0.3-0.5 kg/min; wherein the thickness of the ITO plate is 20-25 mm, and the density is 7.14g/cm3The purity is 99.95%;
3. sanding treatment: putting the screened ITO powder into a sand mill, adding deionized water, a dispersing agent and grinding balls, wherein the mass ratio of the deionized water to the mixed powder is 1:4, the content of the dispersing agent is 4.5wt%, and dispersingThe agent is prepared by mixing allyl amine polyoxyethylene ether, methacrylic acid and ammonium polyacrylate, wherein the mass percent of the allyl amine polyoxyethylene ether is 60%, the mass percent of the methacrylic acid is 20%, and the mass percent of the ammonium polyacrylate is preferably 20%. The sand grinding adopts an ITO grinding ball (the density is 7.14 g/cm)3The purity is 99.95 percent), the grinding ball pollution in the ball milling process is avoided, the ball-material ratio is controlled to be 3:1, the large-medium-small ball ratio of the grinding ball is 1:1:2, wherein the diameter of the large ball is 5mm, the diameter of the medium ball is 3mm, the diameter of the small ball is 1mm, the rotating speed of the ball mill is controlled to be 1000rpm, and the grinding is carried out for 8 hours to obtain ITO slurry with the powder particle size of 223.7 nm;
4. and (3) vacuum treatment: sequentially carrying out mechanical pumping vacuum treatment and molecular pumping vacuum treatment on the sanded ITO slurry, wherein the mechanical pumping vacuum treatment time is 40min, and the vacuum degree of a system after the mechanical pumping vacuum treatment is preferably 0.5 kPa; the time for pumping vacuum of the molecular pump is 90 min.
FIG. 1 is a graph showing a distribution of particle sizes of ITO slurries prepared in this example. The ITO slurry prepared by the process can be directly used in a slip casting process of the ITO target, and the process has the advantages of short preparation time, small slurry pollution, small particle size range of prepared slurry powder and the like.
Example 2
1. Mechanically mixing indium oxide powder and tin oxide powder: indium oxide powder and tin oxide powder are mixed according to the mass ratio of 9: 1, preparing, namely putting prepared ITO powder into a mixing stirrer for mixing, and stirring for 20min to preliminarily mix indium oxide powder and tin oxide powder;
2. and (3) airflow crushing treatment: placing the mixed ITO powder into an impact type jet mill for further crushing, wherein an impact plate used in the jet mill is a specially-made ITO plate, placing the crushed ITO powder into a screening machine for screening, carrying out next treatment when the particle size of the powder is smaller than 1 mu m, and placing the powder larger than 1 mu m into the jet mill again for secondary crushing; wherein the flow range of the high-pressure air supplied by the jet mill is 6-8 Nm3/min, and the feeding rate is 0.3-0.5 kg/min; wherein the thickness of the ITO plate is 20-25 mm, and the density is 7.14g/cm3The purity is 99.95%;
3. sanding treatment: putting the screened ITO powderAnd putting the mixture into a sand mill, and adding deionized water, a dispersing agent and grinding balls, wherein the mass ratio of the deionized water to the mixed powder is 22:78, the content of the dispersing agent is 3wt%, the dispersing agent is formed by mixing allyl amine polyoxyethylene ether, methacrylic acid and ammonium polyacrylate, the mass percentage of the allyl amine polyoxyethylene ether is 55%, the mass percentage of the methacrylic acid is 25%, and the mass percentage of the ammonium polyacrylate is preferably 20%. The sand grinding adopts a special ITO grinding ball (the density is 7.14 g/cm)3The purity is 99.95 percent), the grinding ball pollution in the ball milling process is avoided, the ball-material ratio is controlled to be 3:1, the large-medium-small ball ratio of the grinding ball is 1:1:2, wherein the diameter of the large ball is 5mm, the diameter of the medium ball is 3mm, the diameter of the small ball is 1mm, the rotating speed of the ball mill is controlled to be 800rpm, and the grinding is carried out for 10 hours to obtain ITO slurry with the powder particle size of 243.6 nm;
4. and (3) vacuum treatment: sequentially carrying out mechanical pumping vacuum treatment and molecular pumping vacuum treatment on the sanded ITO slurry, wherein the mechanical pumping vacuum treatment time is 30min, and the vacuum degree of a system after the mechanical pumping vacuum treatment is preferably 0.8 kPa; the time for pumping vacuum of the molecular pump is 80 min.
FIG. 2 is a graph showing a distribution of particle sizes of the ITO slurry prepared in this example. The ITO slurry prepared by the process can be directly used in a slip casting process of the ITO target, and the process has the advantages of short preparation time, small slurry pollution, small particle size range of prepared slurry powder and the like.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (10)
1. The preparation method of the slurry for the ITO target slip casting process comprises four processes of mechanical mixing, airflow crushing, sanding and vacuum treatment, and is characterized in that:
(1) mechanically mixing indium oxide powder and tin oxide powder: mixing indium oxide powder and tin oxide powder to prepare ITO powder, putting the prepared ITO powder into a mixing stirrer to be mixed, and stirring for 20-30min to preliminarily mix the indium oxide powder and the tin oxide powder;
(2) and (3) airflow crushing treatment: placing the mixed ITO powder into an impact type jet mill for further crushing, wherein an impact plate used in the jet mill is an ITO plate, placing the crushed ITO powder into a screening machine for screening, carrying out next treatment when the particle size of the powder is smaller than 1 mu m, and placing the powder larger than 1 mu m into the jet mill again for secondary crushing;
(3) sanding treatment: putting the screened ITO powder into a sand mill, adding water, a dispersing agent and grinding balls, and performing ball milling to obtain ITO slurry;
(4) and (3) vacuum treatment: and sequentially carrying out mechanical pump vacuum pumping treatment and molecular pump vacuum pumping treatment on the sanded ITO slurry, wherein the treated slurry can be directly used in the ITO target material slip casting process.
2. The method of claim 1, wherein: the step (1) is as described above
Indium oxide powder and tin oxide powder are mixed according to the mass ratio of 8.5-9: 1.5 to 1.
3. The method of claim 1, wherein: the water in the step (3) is deionized water.
4. The method of claim 1, wherein: the dispersing agent in the step (3) is formed by mixing allyl amine polyoxyethylene ether, methacrylic acid and polyacrylamide, wherein the mass percent of the allyl amine polyoxyethylene ether is 55-60%, the mass percent of the methacrylic acid is 15-20%, and the mass percent of the polyacrylamide is 20-25%.
5. The method of claim 1, wherein: the mass ratio of the total mass of the mixed powder containing tin oxide and indium oxide to water in the step (3) is (7.5-8.5): (2.5-1.5), wherein the mass ratio of the total mass of the mixed powder containing tin oxide and indium oxide to the dispersing agent is 1 (0.03-0.05).
6. The method of claim 1, wherein: and (3) adopting an ITO grinding ball as the grinding ball, controlling the mass ratio of ball materials to be 3-5: 1, and controlling the mass ratio of large, medium and small balls of the grinding ball to be 1:1:2, wherein the diameter of the large ball is 5mm, the diameter of the medium ball is 3mm, and the diameter of the small ball is 1 mm.
7. The method of claim 1, wherein: the ball milling conditions in the step (3) are as follows: the ball milling adopts ITO milling balls, the rotating speed of the ball mill is controlled at 800-1200rpm, and the ball milling lasts for 8-10 h.
8. The method of claim 1, wherein: the particle size of the ITO slurry powder subjected to ball milling in the step (3) is 200-250 nm.
9. The method of claim 1, wherein: the time for pumping vacuum by the mechanical pump in the step (4) is 20-40 min; the vacuum degree of the system after the mechanical pump is vacuumized is 0.5-1 kPa.
10. The method of claim 1, wherein: pumping the vacuum degree to 5-8 x 10 by the molecular pump in the step (4)-3And after Pa, continuously vacuumizing for 60-90 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110070023.XA CN112608143A (en) | 2021-01-19 | 2021-01-19 | Preparation method of slurry for ITO target slip casting process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110070023.XA CN112608143A (en) | 2021-01-19 | 2021-01-19 | Preparation method of slurry for ITO target slip casting process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112608143A true CN112608143A (en) | 2021-04-06 |
Family
ID=75254450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110070023.XA Pending CN112608143A (en) | 2021-01-19 | 2021-01-19 | Preparation method of slurry for ITO target slip casting process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112608143A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114163216A (en) * | 2021-12-15 | 2022-03-11 | 先导薄膜材料（广东）有限公司 | Indium titanium ytterbium oxide powder and preparation method and application thereof |
| CN114275808A (en) * | 2021-07-01 | 2022-04-05 | 芜湖映日科技股份有限公司 | Preparation process of nanoscale ITO powder for TFT-LCD target |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110074229A (en) * | 2009-12-24 | 2011-06-30 | 엘지디스플레이 주식회사 | Method of fabricating sputtering target for oxide thin film transistor |
| CN103044021A (en) * | 2012-12-28 | 2013-04-17 | 中国船舶重工集团公司第七二五研究所 | Preparation method of slip-casting high-density and high-strength ITO target green body |
| CN106082993A (en) * | 2016-06-08 | 2016-11-09 | 中国船舶重工集团公司第七二五研究所 | A kind of method preparing high-performance ITO pelletizing |
| CN108151531A (en) * | 2017-09-11 | 2018-06-12 | 福建阿石创新材料股份有限公司 | The high temperature centrifugal sintering system and its sintering method of a kind of tubulose ITO target |
| CN111394706A (en) * | 2020-03-06 | 2020-07-10 | 郑州大学 | Preparation method of ITO ceramic target material with controllable grain size |
| CN111620367A (en) * | 2020-06-08 | 2020-09-04 | 福建阿石创新材料股份有限公司 | Method for recovering ITO powder from ITO residual target/waste target |
-
2021
- 2021-01-19 CN CN202110070023.XA patent/CN112608143A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110074229A (en) * | 2009-12-24 | 2011-06-30 | 엘지디스플레이 주식회사 | Method of fabricating sputtering target for oxide thin film transistor |
| CN103044021A (en) * | 2012-12-28 | 2013-04-17 | 中国船舶重工集团公司第七二五研究所 | Preparation method of slip-casting high-density and high-strength ITO target green body |
| CN106082993A (en) * | 2016-06-08 | 2016-11-09 | 中国船舶重工集团公司第七二五研究所 | A kind of method preparing high-performance ITO pelletizing |
| CN108151531A (en) * | 2017-09-11 | 2018-06-12 | 福建阿石创新材料股份有限公司 | The high temperature centrifugal sintering system and its sintering method of a kind of tubulose ITO target |
| CN111394706A (en) * | 2020-03-06 | 2020-07-10 | 郑州大学 | Preparation method of ITO ceramic target material with controllable grain size |
| CN111620367A (en) * | 2020-06-08 | 2020-09-04 | 福建阿石创新材料股份有限公司 | Method for recovering ITO powder from ITO residual target/waste target |
Non-Patent Citations (1)
| Title |
|---|
| （美）康 普KOM R.J.: "《实用光伏技术》", 30 September 1988, 航空工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114275808A (en) * | 2021-07-01 | 2022-04-05 | 芜湖映日科技股份有限公司 | Preparation process of nanoscale ITO powder for TFT-LCD target |
| CN114163216A (en) * | 2021-12-15 | 2022-03-11 | 先导薄膜材料（广东）有限公司 | Indium titanium ytterbium oxide powder and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106977179B (en) | Method for preparing high-density ITO target by two-step staged sintering method | |
| CN112608143A (en) | Preparation method of slurry for ITO target slip casting process | |
| US8778234B2 (en) | Process for the manufacture of a high density ITO sputtering target | |
| CN108947520B (en) | Preparation method of ITO (indium tin oxide) sintered target material | |
| KR20200019654A (en) | Indium zinc oxide (izo) based sputtering target, and method for producing same | |
| JP2012126937A (en) | Ito sputtering target and manufacturing method thereof | |
| WO2021169418A1 (en) | Itio rotary target and preparation method therefor | |
| CN115028442B (en) | Preparation method for improving compressive strength of permanent magnetic ferrite magnetic shoe | |
| CN114293158B (en) | Preparation method of tungsten-silicon alloy target | |
| CN101198565A (en) | Method for producing IZO sputtering target | |
| CN106892560A (en) | A kind of high finished product rate glass and its production technology | |
| CN112723871B (en) | High-magnetic permanent magnetic ferrite magnetic shoe and preparation method thereof | |
| CN104710163A (en) | method for producing IZO sputtering target | |
| CN113233873A (en) | ITO waste material recycling and processing method | |
| CN111807845A (en) | Preparation method of solid spherical ITO granulation powder | |
| CN115504768A (en) | Preparation method of indium gallium zinc oxide target material | |
| CN113800900A (en) | Method for processing high-density ITO target material powder | |
| JP3444713B2 (en) | Method for manufacturing ITO sputtering target | |
| CN105540647A (en) | ITO (indium tin oxide) powder for rotating target prepared by thermal spraying method as well as production method and application of ITO powder | |
| CN111574196A (en) | Ball milling medium and preparation method and application thereof | |
| KR100973251B1 (en) | Composition for marble chip and manufacturing method of marble chip | |
| CN115010471B (en) | Mixed buried powder degreasing method based on photo-cured 3D printing textured alumina | |
| JP2001072470A (en) | Production of ito sintered compact | |
| JP2612807B2 (en) | Method for manufacturing ITO sputtering target | |
| CN117285344B (en) | IGZO target material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210406 |
|
| RJ01 | Rejection of invention patent application after publication |