CN112599644A - Light energy plate for electric curtain and preparation method thereof - Google Patents
Light energy plate for electric curtain and preparation method thereof Download PDFInfo
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- CN112599644A CN112599644A CN202011352941.3A CN202011352941A CN112599644A CN 112599644 A CN112599644 A CN 112599644A CN 202011352941 A CN202011352941 A CN 202011352941A CN 112599644 A CN112599644 A CN 112599644A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000002245 particle Substances 0.000 claims abstract description 64
- 229910052802 copper Inorganic materials 0.000 claims abstract description 62
- 239000010949 copper Substances 0.000 claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007822 coupling agent Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 121
- 239000000243 solution Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 15
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 14
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 13
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 10
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000006872 improvement Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- ZDZYGYFHTPFREM-UHFFFAOYSA-N 3-[3-aminopropyl(dimethoxy)silyl]oxypropan-1-amine Chemical compound NCCC[Si](OC)(OC)OCCCN ZDZYGYFHTPFREM-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a light energy plate for an electric curtain, which comprises the following steps: providing a substrate, carrying out texturing treatment on the substrate, cleaning the substrate by adopting an aminosilane coupling agent solution, and then sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, a p-type amorphous silicon layer and an antireflection layer on the front surface of the substrate to obtain a substrate; then putting the substrate into the copper particle sol solution to form a nano copper particle layer on the back of the substrate; and forming an aluminum electric field layer on the nano copper particle layer to obtain the finished product of the optical energy plate. Correspondingly, the invention also discloses the optical energy plate for the electric curtain, which is prepared by the preparation method. By implementing the invention, a good light trapping structure can be formed on the back surface of the optical energy plate, and the spectral response capability of the optical energy plate is effectively improved, so that the optical energy plate can provide enough energy for driving the electric curtain under the low-light conditions of cloudy days, indoor light and the like.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a light energy plate for an electric curtain and a preparation method thereof.
Background
Sunshade products in the existing market control the curtain through the motor rotation and open and shut the realization and shelter from sunshine, and the power supply mode of motor can be through external household power, perhaps generate electricity through solar thermal radiation. Adopt the former power supply mode, need lay wire, influence the wall body pleasing to the eye, also increase the installation degree of difficulty. If the latter power supply mode is adopted, sufficient solar radiation cannot be obtained in cloudy days, and sufficient and stable electric energy cannot be obtained. In order to solve the above problems, the inventor proposes a technical scheme of combining a lithium battery and a solar cell panel in the prior application (202010297520.9), and the driving problem under the low light conditions such as cloudy days is solved by storing redundant electric energy generated by the solar cell panel when the illumination is sufficient in the lithium battery and controlling a plurality of driving motors by a group control system. However, adding a lithium battery makes the controller bulky; meanwhile, the group control system also improves the production cost. In addition, in order to generate additional electric energy, the size of the solar cell needs to be increased, one is not beautiful enough, and the two also increase the cost.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for preparing a light energy plate for an electric curtain, wherein the prepared light energy plate can generate enough energy to drive the electric curtain under the conditions of common light, cloudy days and other weak light.
The invention also aims to provide a light energy plate for an electric curtain.
In order to solve the above technical problem, the present invention provides a method for preparing a light energy plate for an electric curtain, comprising:
(1) providing a substrate;
(2) texturing the front side of the substrate;
(3) cleaning the textured substrate by using a first solution containing an aminosilane coupling agent;
(4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
(5) forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
(6) putting the substrate into a copper particle sol solution to form a nano copper particle layer on the back of the substrate;
(7) forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
the preparation method of the copper particle sol solution comprises the following steps: uniformly mixing a copper chloride aqueous solution and a polyvinylpyrrolidone aqueous solution, adding a hydrazine hydrate solution, and reacting to obtain a copper particle sol solution;
under the illumination condition of 500Lux, the open-circuit voltage of the light energy plate for the electric curtain is more than or equal to 13.5V, the working current of the light energy plate is more than or equal to 22mA, and the working voltage of the light energy plate is 15-17V.
As an improvement of the above technical solution, the substrate is ITO transparent conductive glass, and the anti-reflection layer is an ITO layer, a ZAO layer, an FTO layer, or an IZO layer.
As an improvement of the technical scheme, the step (2) comprises the following steps:
(2.1) forming an ink protection layer on the back surface of the substrate;
(2.2) putting the substrate provided with the ink protective layer into a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and corroding at the temperature of 60-80 ℃ for 5-10 hours to carry out texturing treatment on the front side of the substrate;
and (2.3) removing the ink protective layer on the back surface of the substrate.
As an improvement of the technical scheme, the step (3) comprises the following steps:
(3.1) cleaning the textured substrate by sequentially adopting pure water and ethanol;
(3.2) drying the cleaned substrate, then putting the substrate into a first solution with the concentration of 1-3 vol% for soaking for 5-10 h, taking out and drying.
As an improvement of the technical scheme, the amino silane coupling agent is N-beta (aminoethyl) -gamma-aminopropyl trimethoxy silane or gamma-aminopropyl trimethoxy silane.
As an improvement of the technical scheme, the concentration of the copper chloride aqueous solution is 0.2-2 mol/L, the concentration of the polyvinylpyrrolidone aqueous solution is 0.1-1.5 mol/L, and the concentration of the hydrazine hydrate solution is 0.3-5 mol/L.
As an improvement of the technical scheme, in the step (5), a medium-frequency pulse magnetron sputtering system is adopted to form the anti-reflection layer, the forming temperature is 150-170 ℃, and the sputtering pressure is 1-2.2 Pa.
As an improvement of the technical scheme, the step (6) comprises the following steps:
(6.1) preparing a copper particle sol solution;
(6.2) placing the substrate into the copper particle sol solution, and preserving heat for 10-15 hours at the temperature of 30-50 ℃ to form a nano copper particle layer on the back of the substrate;
and (6.3) cleaning the substrate by pure water and ethanol in sequence, and drying by nitrogen or argon. As an improvement of the above technical solution, in step (7), an aluminum electric field layer is formed on the nano-copper particle layer by using a screen printing process.
Correspondingly, the invention also discloses a light energy plate for the electric curtain, which is prepared by adopting the preparation method of the light energy plate for the electric curtain.
The implementation of the invention has the following beneficial effects:
1. according to the invention, the nano-copper particle layer is prepared on the back surface of the substrate, so that a light trapping structure with a good effect can be formed, the spectral response capability of the light energy plate is effectively improved, and the light energy plate can provide enough energy for driving the electric curtain under the conditions of low light such as cloudy days and indoor light.
2. The invention adopts a chemical self-assembly method to prepare the nano-copper particle layer on the back of the substrate, and the method is simple and has low cost.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a light energy plate for an electric curtain according to the present invention;
fig. 2 is a schematic structural diagram of a light energy panel for a motorized shade according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It is only noted that the invention is intended to be limited to the specific forms set forth herein, including any reference to the drawings, as well as any other specific forms of embodiments of the invention.
Referring to fig. 1, the invention discloses a method for preparing a light energy plate for an electric curtain, which comprises the following steps:
s1: providing a substrate;
specifically, the substrate may be glass, ceramic plate, stainless steel, but is not limited thereto. Preferably, in the invention, the substrate is made of ITO transparent conductive glass which has excellent compatibility with a silicon structure and excellent conductivity.
S2: texturing the front side of the substrate;
specifically, S2 includes:
s21: forming an ink protective layer on the back of the substrate;
specifically, a layer of acid-resistant ink can be printed on the back surface of the substrate by adopting a screen printing process to obtain an ink protective layer;
s22: placing the substrate provided with the ink protection layer into a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and corroding for 5-10 hours at the temperature of 60-80 ℃ to carry out texturing treatment on the front side of the substrate;
s23: and removing the ink protection layer on the back surface of the substrate.
Specifically, the acid-resistant ink layer can be removed by soaking with an alkali solution (such as, but not limited to, NaOH).
S3: cleaning the textured substrate by adopting a first solution containing an aminosilane coupling agent;
specifically, S3 includes:
s31: cleaning the textured substrate by using pure water and ethanol in sequence;
specifically, the substrate is put into pure water and is subjected to ultrasonic cleaning for 50-70 min; and then, putting the substrate into ethanol, and soaking for 1-2 hours.
S32: and drying the cleaned substrate, then putting the substrate into a first solution with the concentration of 1-3 vol% for soaking for 5-10 h, and taking out and drying.
Specifically, the first solution is an aqueous solution containing an aminosilane coupling agent, and the concentration of the aminosilane coupling agent is 1to 3 vol%, and exemplarily may be 1 vol%, 1.3 vol%, 1.8 vol%, 2.1 vol%, 2.7 vol%, but is not limited thereto.
Specifically, the aminosilane coupling agent may be N-beta (aminoethyl) -gamma-aminopropyltrimethoxysilane or gamma-aminopropyltrimethoxysilane, but is not limited thereto.
S4: sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
specifically, the cleaned substrate is placed in a vacuum chamber, and an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer are deposited on the front surface of the substrate by using a Plasma Chemical Vapor Deposition (PCVD) method, but not limited thereto.
Wherein, the deposition of the n-type amorphous silicon layer and the p-type amorphous silicon layer can be realized by adopting the common process in the field. SiH is adopted in the deposition process of the i-type amorphous silicon layer4And H2The mixed gas is used as a reaction gas, the deposition temperature is 150-180 ℃, the pressure is 0.8-1.2 torr, and SiH is controlled4：H2Less than or equal to 0.18 (vol); under this condition H2Can effectively dilute SiH4And the defects of a-Si and H are reduced.
S5: forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
specifically, the antireflection layer may be formed by a sputtering method or a Chemical Vapor Deposition (CVD) method; preferably, the antireflection layer is formed by adopting a medium-frequency pulse magnetron sputtering system, so that the cost is low and the deposition rate is high. Specifically, the sputtering temperature is 150-170 ℃, and the sputtering pressure is 1-2.2 Pa. The resistivity of the antireflection layer formed under the condition is lower, and the film defects of the antireflection layer are relatively less.
Specifically, the antireflection layer can be an ITO layer, a ZAO layer, an FTO layer or an IZO layer; preferably, an ITO layer or an IZO layer is used.
S6: putting a substrate into a copper particle sol solution, and forming a nano copper particle layer on the back of the substrate;
specifically, S6 includes:
s61: preparing a copper particle sol solution;
specifically, a copper chloride aqueous solution and a polyvinylpyrrolidone aqueous solution are uniformly mixed, a hydrazine hydrate solution is added, and a copper particle sol solution is obtained after reaction.
Wherein the concentration of the copper chloride aqueous solution is 0.2-2 mol/L, the concentration of the polyvinylpyrrolidone aqueous solution is 0.1-1.5 mol/L, and the concentration of the hydrazine hydrate solution is 0.3-5 mol/L.
Wherein the volume ratio of the copper chloride aqueous solution to the polyvinylpyrrolidone is 1: (5-10); the molar ratio of the copper chloride to the hydrazine hydrate is 1: 1.2-1.5.
S62: placing a substrate into a copper particle sol solution, and preserving heat for 10-15 hours at the temperature of 30-50 ℃ to form a nano copper particle layer on the back of the substrate;
specifically, by soaking the substrate, a nano-copper particle layer is formed on the back of the substrate through a chemical self-assembly process, and the nano-copper particle layer is composed of a plurality of mutually separated nano-copper particles, wherein the particle size of a single nano-copper particle is 400-500 nm, and the distance between different nano-copper particles is 0.8-3 μm. The nano copper particle layer with the structure can cooperate with the textured structure and the antireflection layer arranged on the front surface of the substrate to form a light trapping structure with good performance, so that the spectral response capability of the light energy plate is effectively improved, and the light energy plate can provide enough energy for driving the electric curtain under the low-light conditions of cloudy days, indoor light and the like.
S63: and cleaning the substrate by pure water and ethanol in sequence, and drying by nitrogen or argon.
Specifically, the substrate is firstly put into pure water and is subjected to ultrasonic cleaning, and the cleaning time is 30-60 min; and then, putting the substrate into ethanol, and soaking for 1-2 hours.
S7: forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
specifically, the aluminum electric field layer can be formed by a sputtering process, a chemical vapor deposition method or screen printing; preferably, the aluminum electric field layer is formed by a screen printing process, which is low in cost.
Correspondingly, the invention also discloses a light energy plate for the electric curtain, which is prepared by adopting the preparation method of the light energy plate for the electric curtain. Specifically, referring to fig. 2, it includes a substrate 1, an n-type amorphous silicon layer 2, an i-type amorphous silicon layer 3, a p-type amorphous silicon layer 4, and an antireflective layer 5 sequentially disposed on the front surface of the substrate 1, and a nano-copper particle layer 6 and an aluminum electric field layer 7 sequentially disposed on the back surface of the substrate 1. The nano-copper particle layer 7 is composed of a plurality of mutually separated nano-copper particles, the particle size of a single nano-copper particle is 400-500 nm, and the distance between different nano-copper particles is 0.8-3 mu m. Based on the light energy board of above-mentioned structure, can effectively promote the spectral response ability of light energy board for it can provide the energy of enough drive electronic curtain under dim light conditions such as cloudy day, indoor light. Specifically, the indoor light may be a metal halide lamp.
In addition, the light energy plate prepared based on the method has the open-circuit voltage of more than or equal to 13.5V, the working current of more than or equal to 22mA, and the working voltage of 15-17V under the illumination condition of 500Lux
The invention is further illustrated by the following specific examples:
example 1
The embodiment provides a method for preparing a light energy plate for an electric curtain, which comprises the following steps:
(1) providing a substrate;
wherein the substrate is ITO transparent conductive glass;
(2) texturing the front side of the substrate;
specifically, an ink protective layer is formed on the back of a substrate, and then the ink protective layer is put into a mixed solution of hydrogen peroxide and concentrated sulfuric acid with the volume ratio of 1:3 and corroded for 6 hours; taking out and washing off the ink protective layer by NaOH.
(3) Cleaning the textured substrate by using a first solution containing an aminosilane coupling agent;
specifically, ultrasonic cleaning is carried out for 1h by adopting pure water, and then the mixture is soaked in ethanol for 1 h; the substrate was then immersed in 1 vol% aqueous gamma-aminopropyltrimethoxysilane solution for 6 hours.
(4) Sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
wherein, SiH is used for forming i-type amorphous silicon layer4：H21.5: 10; the temperature was 160 ℃ and the pressure was 1 torr.
(5) Forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
wherein, a ZAO layer is formed by adopting a medium-frequency pulse magnetron sputtering system, the sputtering temperature is 150 ℃, and the sputtering pressure is 1.1 Pa.
(6) Putting the substrate into a copper particle sol solution to form a nano copper particle layer on the back of the substrate;
specifically, 0.3mol/L aqueous solution of copper chloride and 1.5mol/L aqueous solution of polyvinylpyrrolidone are uniformly mixed according to the proportion of 1:5, and 0.3mol/L hydrazine hydrate solution is added for reaction to obtain copper particle sol solution. Wherein the molar ratio of the copper chloride to the hydrazine hydrate is 1: 1.5.
And (3) putting the substrate into the copper particle sol solution, and preserving the heat for 10 hours at 50 ℃ to obtain the nano copper particle layer.
(7) Forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
and forming an aluminum electric field layer on the nano-copper particle layer by adopting a screen printing process.
Example 2
The embodiment provides a method for preparing a light energy plate for an electric curtain, which comprises the following steps:
(1) providing a substrate;
wherein the substrate is ITO transparent conductive glass;
(2) texturing the front side of the substrate;
specifically, an ink protective layer is formed on the back of a substrate, and then the ink protective layer is put into a mixed solution of hydrogen peroxide and concentrated sulfuric acid with the volume ratio of 1:2 and corroded for 8 hours; taking out and washing off the ink protective layer by NaOH.
(3) Cleaning the textured substrate by using a first solution containing an aminosilane coupling agent;
specifically, ultrasonic cleaning is carried out for 50min by adopting pure water, and then the mixture is soaked in ethanol for 1 h; then the substrate was immersed in 1.5 vol% aqueous N-. beta. (aminoethyl) - γ -aminopropyltrimethoxysilane solution for 5 hours.
(4) Sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
wherein, SiH is used for forming i-type amorphous silicon layer4：H21: 9; the temperature was 160 ℃ and the pressure was 0.8 torr.
(5) Forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
wherein, an IZO layer is formed by adopting a medium-frequency pulse magnetron sputtering system, the sputtering temperature is 150 ℃, and the sputtering pressure is 1.1 Pa.
(6) Putting the substrate into a copper particle sol solution to form a nano copper particle layer on the back of the substrate;
specifically, 1mol/L copper chloride aqueous solution and 0.6mol/L polyvinylpyrrolidone aqueous solution are uniformly mixed according to the proportion of 1:10, 0.4mol/L hydrazine hydrate solution is added, and copper particle sol solution is obtained after reaction. Wherein the molar ratio of the copper chloride to the hydrazine hydrate is 1:1.
And (3) putting the substrate into the copper particle sol solution, and preserving the heat for 12 hours at the temperature of 35 ℃ to obtain a nano copper particle layer.
(7) Forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
and forming an aluminum electric field layer on the nano-copper particle layer by adopting a screen printing process.
Example 3
The embodiment provides a method for preparing a light energy plate for an electric curtain, which comprises the following steps:
(1) providing a substrate;
wherein the substrate is ITO transparent conductive glass;
(2) texturing the front side of the substrate;
specifically, an ink protective layer is formed on the back of a substrate, and then the ink protective layer is put into a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 3:7 and corroded for 8 hours; taking out and washing off the ink protective layer by NaOH.
(3) Cleaning the textured substrate by using a first solution containing an aminosilane coupling agent;
specifically, ultrasonic cleaning is carried out for 50min by adopting pure water, and then the mixture is soaked in ethanol for 1 h; the substrate was then immersed in 2.1 vol% aqueous N- β (aminoethyl) - γ -aminopropyltrimethoxysilane solution for 7 h.
(4) Sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
wherein, SiH is used for forming i-type amorphous silicon layer4：H21: 9; the temperature was 170 ℃ and the pressure was 1.1 torr.
(5) Forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
wherein, an intermediate frequency pulse magnetron sputtering system is adopted to form an ITO layer, the sputtering temperature is 160 ℃, and the sputtering pressure is 1.7 Pa.
(6) Putting the substrate into a copper particle sol solution to form a nano copper particle layer on the back of the substrate;
specifically, 1.4mol/L aqueous solution of copper chloride and 0.7mol/L aqueous solution of polyvinylpyrrolidone are uniformly mixed according to the proportion of 1:6, and 0.3mol/L hydrazine hydrate solution is added for reaction to obtain copper particle sol solution. Wherein the molar ratio of the copper chloride to the hydrazine hydrate is 1: 1.4.
And (3) putting the substrate into the copper particle sol solution, and keeping the temperature at 40 ℃ for 14h to obtain the nano copper particle layer.
(7) Forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
and forming an aluminum electric field layer on the nano-copper particle layer by adopting a screen printing process.
Comparative example 1
This comparative example provides a light energy panel for a motorized shade, which is different from example 3 in that an aluminum electric field layer is formed directly on the back surface of the substrate without including step (6), i.e., after step (5).
Comparative example 2
This comparative example provides a light energy panel for a motorized shade that differs from example 3 in that the substrate is not textured.
while the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A method for preparing a light energy plate for an electric curtain is characterized by comprising the following steps:
(1) providing a substrate;
(2) texturing the front side of the substrate;
(3) cleaning the textured substrate by using a first solution containing an aminosilane coupling agent;
(4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer on the front surface of the cleaned substrate;
(5) forming an antireflection layer on the p-type amorphous silicon layer to obtain a substrate;
(6) putting the substrate into a copper particle sol solution to form a nano copper particle layer on the back of the substrate;
(7) forming an aluminum electric field layer on the nano copper particle layer to obtain a light energy plate finished product;
the preparation method of the copper particle sol solution comprises the following steps: uniformly mixing a copper chloride aqueous solution and a polyvinylpyrrolidone aqueous solution, adding a hydrazine hydrate solution, and reacting to obtain a copper particle sol solution;
under the illumination condition of 500Lux, the open-circuit voltage of the light energy plate for the electric curtain is more than or equal to 13.5V, the working current of the light energy plate is more than or equal to 22mA, and the working voltage of the light energy plate is 15-17V.
2. The method of manufacturing a light energy panel for a motorized shade as defined in claim 1, wherein the substrate is an ITO transparent conductive glass and the anti-reflection layer is an ITO layer, a ZAO layer, an FTO layer or an IZO layer.
3. The method of manufacturing a light energy panel for a motorized shade as defined in claim 1, wherein step (2) comprises:
(2.1) forming an ink protection layer on the back surface of the substrate;
(2.2) putting the substrate provided with the ink protective layer into a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and corroding at the temperature of 60-80 ℃ for 5-10 hours to carry out texturing treatment on the front side of the substrate;
and (2.3) removing the ink protective layer on the back surface of the substrate.
4. The method of manufacturing a light energy panel for a motorized shade as defined in claim 1, wherein step (3) comprises:
(3.1) cleaning the textured substrate by sequentially adopting pure water and ethanol;
(3.2) drying the cleaned substrate, then putting the substrate into a first solution with the concentration of 1-3 vol% for soaking for 5-10 h, taking out and drying.
5. The method of claim 1, wherein the aminosilane coupling agent is selected from the group consisting of N- β (aminoethyl) - γ -aminopropyltrimethoxysilane and γ -aminopropyltrimethoxysilane.
6. The method for manufacturing the light energy plate for the electric curtain as claimed in claim 1, wherein the concentration of the copper chloride aqueous solution is 0.2-2 mol/L, the concentration of the polyvinylpyrrolidone aqueous solution is 0.1-1.5 mol/L, and the concentration of the hydrazine hydrate solution is 0.3-5 mol/L.
7. The method for preparing the light energy plate for the electric curtain as claimed in claim 1 or 2, wherein in the step (5), the anti-reflection layer is formed by using a medium frequency pulse magnetron sputtering system, the forming temperature is 150-170 ℃, and the sputtering pressure is 1-2.2 Pa.
8. The method of manufacturing a light energy panel for a motorized shade as defined in claim 1, wherein step (6) comprises:
(6.1) preparing a copper particle sol solution;
(6.2) placing the substrate into the copper particle sol solution, and preserving heat for 10-15 hours at the temperature of 30-50 ℃ to form a nano copper particle layer on the back of the substrate;
and (6.3) cleaning the substrate by pure water and ethanol in sequence, and drying by nitrogen or argon.
9. The method of manufacturing a light energy panel for an electric curtain as claimed in claim 1, wherein in the step (7), an aluminum electric field layer is formed on the nano-copper particle layer by a screen printing process.
10. A light energy plate for an electric curtain, which is prepared by the method for preparing the light energy plate for the electric curtain as claimed in any one of claims 1to 9.
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