CN112599620A - Neutron radiation detector - Google Patents
Neutron radiation detector Download PDFInfo
- Publication number
- CN112599620A CN112599620A CN202011472265.3A CN202011472265A CN112599620A CN 112599620 A CN112599620 A CN 112599620A CN 202011472265 A CN202011472265 A CN 202011472265A CN 112599620 A CN112599620 A CN 112599620A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon carbide
- carbide substrate
- conductive silicon
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 61
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000463 material Substances 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003759 clinical diagnosis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The invention provides a neutron radiation detector, the device structure includes: the conductive silicon carbide substrate, the non-doped SiC intrinsic epitaxial layer prepared on the conductive silicon carbide substrate, the Schottky electrode prepared on the SiC intrinsic epitaxial layer, the BN layer prepared on the Schottky electrode and the ohmic electrode prepared on the lower surface of the conductive silicon carbide substrate; the BN layer is a neutron conversion layer, and the neutron and the isotope of B in the BN layer10B reacts to form Alpha particles; the non-doped SiC intrinsic epitaxial layer is an Alpha particle detection layer, and the Alpha particles generate electron-hole pairs in the non-doped SiC intrinsic epitaxial layer, so that signal current is formed under an external bias voltage, and finally neutron detection is realized. BN is used as a neutron conversion layer to realize the conversion of neutrons to Alpha particles.And finally, the effective detection of neutrons is realized by utilizing the high resolution capability of the silicon carbide to Alpha particles.
Description
Technical Field
The invention relates to the technical field of radiation detection, in particular to a neutron radiation detector.
Background
At present, neutron radiation detectors are widely applied to the aspects of nuclear power station safety monitoring, nuclear physics experiment monitoring, nuclear medicine clinical diagnosis and the like.
However, currently for neutron detection, the neutron conversion layer is a key component in the detector. Common elements that can react with neutrons to convert neutrons into Alpha particles are Li and B. Wherein LiF layer has been reported in literature as neutron conversion layer. But the defects of easy cracking and difficult formation of a complete film exist in the preparation process of the LiF material.
Disclosure of Invention
In order to overcome the technical problems in the prior art, the invention provides a BN-SiC neutron radiation detector, which realizes the conversion of neutrons to Alpha particles by using BN as a neutron conversion layer. And finally, the effective detection of neutrons is realized by utilizing the high resolution capability of the silicon carbide to Alpha particles.
A neutron radiation detector, the device structure comprising: the conductive silicon carbide substrate, the non-doped SiC intrinsic epitaxial layer prepared on the conductive silicon carbide substrate, the Schottky electrode prepared on the SiC intrinsic epitaxial layer, the BN layer prepared on the Schottky electrode and the ohmic electrode prepared on the lower surface of the conductive silicon carbide substrate; the BN layer is a neutron conversion layer, and the neutron and the isotope of B in the BN layer10B reacts to form Alpha particles; the non-doped SiC intrinsic epitaxial layer is an Alpha particle detection layer, and the Alpha particles generate electron-hole pairs in the non-doped SiC intrinsic epitaxial layer to form signal current under an external bias voltage so as to realize neutron detection.
Preferably, the doping concentration of the non-doped SiC intrinsic epitaxial layer is smallAt 9X 1015cm-3The thickness is 10-100 μm.
Preferably, the BN layer is 0.1 to 100 μm thick.
Preferably, the schottky electrode may be Ni or Ni — Au.
Preferably, the ohmic electrode may be Ti, Ti-Au or Ti-Al-Ti-Au.
The invention provides a preparation method of a neutron radiation detector, which comprises the following steps:
s1: providing a conductive silicon carbide substrate;
s2: preparing an undoped SiC intrinsic epitaxial layer on the conductive silicon carbide substrate by a CVD method;
s3: preparing an ohmic electrode on the lower surface of the conductive silicon carbide substrate by using an electron beam evaporation technology;
s4: preparing a Schottky electrode on the upper surface of the non-doped SiC intrinsic epitaxial layer by using an electron beam evaporation technology;
s5: and preparing a BN layer on the Schottky electrode.
Preferably, the preparation of the BN layer is achieved by wet/dry transfer or epitaxial growth.
The invention can obtain the following technical effects:
the conversion of neutrons to Alpha particles is realized by using BN as a neutron conversion layer. And finally, the effective detection of neutrons is realized by utilizing the high resolution capability of the silicon carbide to Alpha particles.
Drawings
Fig. 1 is a schematic structural diagram of a neutron radiation detector according to the present invention.
Fig. 2 is a detection schematic diagram of a neutron radiation detector of the present invention.
Wherein the reference numerals are:
the semiconductor device comprises a conductive silicon carbide substrate 1, an undoped SiC intrinsic epitaxial layer 2, a Schottky electrode 3, a BN layer 4, an ohmic electrode 5, neutrons 6, Alpha particles 7 and electron-hole pairs 8.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
BN material is widely concerned as a novel two-dimensional material at present, and the preparation process thereof is also greatly developed. The preparation of large-size BN materials is currently possible by CVD methods. BN is a neutron detection material which can directly detect neutrons and has great potential10The B atoms have a high thermal neutron capture interface.
A neutron radiation detector provided by the present invention will be described in detail below.
Fig. 1 shows a schematic structural view of a neutron radiation detector according to the present invention.
As shown in fig. 1, the device structure of the neutron radiation detector provided by the present invention includes: the device structure includes: the conductive silicon carbide substrate comprises a conductive silicon carbide substrate 1, an undoped SiC intrinsic epitaxial layer 2 prepared on the conductive silicon carbide substrate 1, a Schottky electrode 3 prepared on the SiC intrinsic epitaxial layer 2, a BN layer 4 prepared on the Schottky electrode 3 and an ohmic electrode 5 prepared on the lower surface of the conductive silicon carbide substrate 1;
the preparation method of the neutron radiation detector provided by the invention comprises the following steps:
s1: providing a conductive silicon carbide substrate 1;
s2: preparing an undoped SiC intrinsic epitaxial layer 2 on the conductive silicon carbide substrate 1;
s3: preparing an ohmic electrode 5 on the lower surface of the conductive silicon carbide substrate 1;
s4: preparing a Schottky electrode 3 on the upper surface of the non-doped SiC intrinsic epitaxial layer 2;
s5: a BN layer 4 is prepared on the schottky electrode 3.
Wherein the preparation of the BN layer 4 is achieved by wet/dry transfer or epitaxial growth. The BN layer 4 is a neutron conversion layer.
Fig. 2 shows a detection diagram of a neutron radiation detector according to the invention.
Its detection schematic diagram and10b elementThe nucleation reaction is shown in FIG. 2. The neutron detection principle is as follows: the BN layer 4 is irradiated by neutrons 6,10the B element generates nucleation to generate Alpha particles 7, the Alpha particles 7 penetrate through the Schottky electrode 3 to enter the non-carbon-doped intrinsic epitaxial layer 2, electron-hole pairs 8 are generated in the layer, and the electrons and the holes are collected by the Schottky electrode 3 and electrodes at two ends of the metal lower electrode 5 under the action of external bias voltage to generate electric signals.
Example 1:
first, an epitaxial layer is grown by CVD: selecting methane as a carbon source, trichlorosilane as a silicon source and hydrogen as a carrier gas, preparing a non-doped SiC intrinsic epitaxial layer on a conductive silicon carbide substrate at 1500 ℃, and regulating and controlling the doping concentration to be 5 multiplied by 1015cm-3The thickness was 20 μm.
Then, the lower surface of the conductive silicon carbide substrate is subjected to electron beam evaporation to prepare Ti \ Al \ Ti \ Au with the respective wavelength of 30nm \30nm \30nm \30nm, and the annealing is carried out for 3 minutes at 900 ℃.
Then preparing Ni/Au on the non-doped SiC intrinsic epitaxial layer by electron beam evaporation, wherein the Ni/Au is respectively 30 nm/30 nm, and performing 400 plating and annealing for 3 minutes. Firstly, PMMA is coated on BN material in a spinning mode, the BN material is transferred to a Ni \ Au electrode after being mechanically stripped, then, the PMMA is removed by utilizing acetone to complete one-time transfer, and 50 micrometers can be achieved through multiple times of transfer.
And finally, completing the preparation of the BN/SiC neutron radiation detector by a semiconductor lead packaging process.
Example 2
Firstly, growing on a conductive silicon carbide substrate by a CVD method to prepare an undoped SiC intrinsic epitaxial layer, and regulating and controlling the doping concentration to be 1 multiplied by 1015cm-3The thickness was 20 μm.
Then, the Ti \ Al \ Au prepared by electron beam evaporation is respectively 30nm \30nm \80nm on the lower surface of the conductive silicon carbide substrate.
Then preparing Ni \ Au on the non-doped SiC intrinsic epitaxial layer, wherein the Ni \ Au is respectively 30nm \80 nm. The 100 mu mBN epitaxial growth is realized on the Ni \ Au electrode by a CVD epitaxial growth method by using a borazane complex compound as a source at 1100 ℃.
And finally, completing the preparation of the BN/SiC neutron radiation detector by a semiconductor lead packaging process.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. A neutron radiation detector, characterized in that the device structure comprises: the conductive silicon carbide substrate comprises a conductive silicon carbide substrate (1), a non-doped SiC intrinsic epitaxial layer (2) prepared on the conductive silicon carbide substrate (1), a Schottky electrode (3) prepared on the non-doped SiC intrinsic epitaxial layer (2), a BN layer (4) prepared on the Schottky electrode (3) and an ohmic electrode (5) prepared on the lower surface of the conductive silicon carbide substrate (1); the BN layer (4) is a neutron conversion layer, and neutrons (6) and isotopes of B in the BN layer (4)10B reacts to form Alpha particles (7); the non-doped SiC intrinsic epitaxial layer (2) is an Alpha particle (7) detection layer, and the Alpha particles (7) generate electron-hole pairs (8) in the non-doped SiC intrinsic epitaxial layer (2) and are outsideThe signal current is formed under bias.
2. The neutron radiation detector of claim 1, wherein the doping concentration of the undoped SiC intrinsic epitaxial layer (2) is less than 9 x 1015cm-3The thickness is 10-100 μm.
3. The neutron radiation detector of claim 1, characterized in that the BN layer (4) is of a thickness of 0.1-100 μm.
4. The neutron radiation detector of claim 1, wherein the schottky electrode (3) is Ni or Ni-Au.
5. The neutron radiation detector of claim 1, wherein the ohmic electrode (5) is Ti, Ti-Au or Ti-Al-Ti-Au.
6. A method of making a neutron radiation detector, comprising the steps of:
s1: providing a conductive silicon carbide substrate (1);
s2: preparing an undoped SiC intrinsic epitaxial layer (2) on the conductive silicon carbide substrate (1) by a CVD method;
s3: preparing an ohmic electrode (5) on the lower surface of the conductive silicon carbide substrate (1) by using an electron beam evaporation technology;
s4: preparing a Schottky electrode (3) on the upper surface of the non-doped SiC intrinsic epitaxial layer (2) by using an electron beam evaporation technology;
s5: preparing a BN layer (4) on the Schottky electrode (3).
7. The method for producing a neutron radiation detector according to claim 6, characterized in that the production of the BN layer (4) is effected by wet/dry transfer or epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011472265.3A CN112599620A (en) | 2020-12-14 | 2020-12-14 | Neutron radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011472265.3A CN112599620A (en) | 2020-12-14 | 2020-12-14 | Neutron radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112599620A true CN112599620A (en) | 2021-04-02 |
Family
ID=75195334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011472265.3A Pending CN112599620A (en) | 2020-12-14 | 2020-12-14 | Neutron radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112599620A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135384A (en) * | 1984-07-28 | 1986-02-19 | Fuji Electric Corp Res & Dev Ltd | Neutron detector |
| US20130292685A1 (en) * | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
| CN103605150A (en) * | 2013-10-26 | 2014-02-26 | 河北工业大学 | Schottky neutron detector and manufacturing method thereof |
| RU2529054C1 (en) * | 2013-06-19 | 2014-09-27 | Общество с ограниченной ответственностью "АПСТЕК Рашен Девелопмент" | Semiconductor detector for detecting neutron-accompanying charged particles in neutron generator with static vacuum |
| CN106662662A (en) * | 2014-06-23 | 2017-05-10 | 伦斯勒理工学院 | Fabricating radiation-detecting structures |
| CN106684177A (en) * | 2017-02-22 | 2017-05-17 | 东华理工大学 | P-GaN/i-GaN/n-BN neutron detector |
| CN108459345A (en) * | 2018-05-25 | 2018-08-28 | 东华理工大学 | A kind of 4H-SiC semiconductor neutron detectors applied to the well logging of instantaneous fission neutrons uranium ore |
-
2020
- 2020-12-14 CN CN202011472265.3A patent/CN112599620A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135384A (en) * | 1984-07-28 | 1986-02-19 | Fuji Electric Corp Res & Dev Ltd | Neutron detector |
| US20130292685A1 (en) * | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
| RU2529054C1 (en) * | 2013-06-19 | 2014-09-27 | Общество с ограниченной ответственностью "АПСТЕК Рашен Девелопмент" | Semiconductor detector for detecting neutron-accompanying charged particles in neutron generator with static vacuum |
| CN103605150A (en) * | 2013-10-26 | 2014-02-26 | 河北工业大学 | Schottky neutron detector and manufacturing method thereof |
| CN106662662A (en) * | 2014-06-23 | 2017-05-10 | 伦斯勒理工学院 | Fabricating radiation-detecting structures |
| CN106684177A (en) * | 2017-02-22 | 2017-05-17 | 东华理工大学 | P-GaN/i-GaN/n-BN neutron detector |
| CN108459345A (en) * | 2018-05-25 | 2018-08-28 | 东华理工大学 | A kind of 4H-SiC semiconductor neutron detectors applied to the well logging of instantaneous fission neutrons uranium ore |
Non-Patent Citations (2)
| Title |
|---|
| 胡青青: "碳化硅中子探测器的研究", 《中国优秀博硕士学位论文全文数据库(硕士)工程科技Ⅱ辑》 * |
| 覃裕良: "4H-SiC SBD型中子探测器研究", 《中国优秀博硕士学位论文全文数据库(硕士)工程科技Ⅱ辑》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10640884B2 (en) | Black phosphorus crystal having high photoelectric response rate, two-dimensional black phosphorus PN junction, and preparation method and use thereof | |
| US20110049379A1 (en) | Neutron detectors made of inorganic materials and their method of fabrication | |
| Cheng et al. | A high open-circuit voltage gallium nitride betavoltaic microbattery | |
| Zhang et al. | Enhanced optoelectronic performance of 3C–SiC/ZnO heterostructure photodetector based on Piezo-phototronic effect | |
| Zhang et al. | Enhanced performances of PVK/ZnO nanorods/graphene heterostructure UV photodetector via piezo‐phototronic interface engineering | |
| Maity et al. | Effects of surface recombination on the charge collection in h-BN neutron detectors | |
| CN112489848A (en) | Semiconductor radiation battery | |
| Wang et al. | Temperature dependent device characteristics of graphene/h-BN/Si heterojunction | |
| Liu et al. | Enhanced performance of diamond Schottky nuclear batteries by using ZnO as electron transport layer | |
| Li et al. | High-performance field emitters based on SiC nanowires with designed electron emission sites | |
| Mballo et al. | Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors | |
| Zeng et al. | Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate | |
| Wu et al. | Ultrafast response solar-blind UV sensor based on ZnGa2O4 nanowire bridge arrays | |
| RU2565829C1 (en) | Slow neutron diamond detector | |
| Grushko et al. | Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer | |
| Lin et al. | Betavoltaic battery prepared by using polycrystalline CdTe as absorption layer | |
| CN112599620A (en) | Neutron radiation detector | |
| La Via et al. | Silicon Carbide devices for radiation detection and measurements | |
| Jayanand et al. | Photodetectors with buckminsterfullerene decorated WSE2 | |
| Amirmazlaghani et al. | Betavoltaic battery based on reduced-Graphene-Oxide/Si heterojunction | |
| US11579317B2 (en) | Hydrogenated amorphous silicon detector | |
| Majety et al. | Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers | |
| CN103523742B (en) | Radiation dose detector of a kind of MOS structure and preparation method thereof | |
| JPS6135384A (en) | Neutron detector | |
| CN109192350A (en) | A kind of Schottky minisize nuclear battery and preparation method thereof based on carbofrax material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210402 |