CN112599613A - Preparation method of gallium arsenide solar cell electrode combined with germanium and used in space - Google Patents
Preparation method of gallium arsenide solar cell electrode combined with germanium and used in space Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 37
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 37
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052709 silver Inorganic materials 0.000 claims abstract description 60
- 239000004332 silver Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 47
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052737 gold Inorganic materials 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims abstract description 32
- 238000009713 electroplating Methods 0.000 claims abstract description 31
- 230000008719 thickening Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 97
- 238000001704 evaporation Methods 0.000 claims description 23
- 230000008020 evaporation Effects 0.000 claims description 21
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- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
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- 238000005406 washing Methods 0.000 claims description 13
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- 239000011248 coating agent Substances 0.000 claims description 9
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- 238000004544 sputter deposition Methods 0.000 claims description 9
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a gallium arsenide solar cell electrode combined with germanium for a space, which comprises the steps of corroding an epitaxial wafer with germanium as a substrate, preparing a gold contact layer and a silver layer on the non-active surface of the epitaxial wafer by using a vacuum method, preparing a silver thickening layer on the silver layer by using an electroplating method, and finally carrying out heat treatment on the epitaxial wafer with the prepared silver thickening layer to obtain the gallium arsenide solar cell electrode combined with germanium for the space. The invention has the beneficial effects that: the electrode can be prepared by combining a vacuum method (such as a vacuum evaporation method or a magnetron sputtering method) with a non-vacuum method (such as a plating method and other methods for growing films in liquid phase), so that the material utilization rate can be improved, the production cost can be reduced, and the productivity can be improved on the premise of not purchasing large-scale equipment; ohmic contact between the electrode and the substrate material can be realized, and the firmness between contact surfaces meets the space use requirement; the product reliability is high.
Description
Technical Field
The invention belongs to the technical field of space solar cells, and particularly relates to a method for preparing a space gallium arsenide solar cell electrode combined with germanium.
Background
The three-junction gallium arsenide solar cell is a solar cell for the space which is most widely applied and has the largest demand in the current space field, and has the characteristics of high conversion efficiency, good radiation resistance, high-temperature working efficiency and the like. According to the battery, III-V group compounds grow on a substrate in a gas phase mode to form an active layer with three PN junction structures, and then current is led out through a metal electrode.
Unlike the solar cell adopted on the ground, the space cell can run along with the spacecraft on a specific orbit, strong temperature alternation can occur along with the entrance and exit of the space cell during the running process, and the change range and the temperature change speed of the space cell are far greater than those of the ground environment. Therefore, space products have more stringent electrode robustness requirements for cells in space environments. The temperature ranges of the spacecraft in different orbits are different in the operation process, the solar cell is used as a universal part according to the requirements of standard specifications, and the firmness of the electrode of the solar cell still meets the corresponding requirements under the temperature impact of-180 ℃ to +100 ℃. Therefore, for a space battery product, the electrode needs to consider not only the ohmic contact of the gold half contact surface, but also the reliability of the space application.
The three-junction gallium arsenide solar cell with lattice matching in the forward growth adopts germanium as a substrate material, and a PN junction of the three-junction gallium arsenide solar cell is in an n-on-p structure due to the characteristic of space use requirement, namely n-type of each sub-junction is positioned on a light receiving surface, p-type is positioned on a backlight surface, and therefore a lower electrode is prepared on the surface of the p-type germanium. The existing battery adopts gold, germanium and silver as an electrode system, because germanium materials can form surface oxides in air within 1 minute, the preparation of the germanium materials is required to be ensured under the vacuum condition in the electrode preparation process, silver with enough thickness is covered behind a germanium layer to ensure that oxygen cannot enter from the pores of the silver layer to cause material oxidation, the price of a single battery is high, the battery can be possibly corroded to cause battery failure, the reliability of a product is low, and therefore, the preparation method of the electrode of the system is severely limited.
Disclosure of Invention
The invention provides a method for preparing a gallium arsenide solar cell electrode combined with germanium for space, wherein the electrode is prepared by combining a vacuum method (a vacuum evaporation method, a magnetron sputtering method and the like) with a non-vacuum method (a method for growing a film by liquid phase such as an electroplating method and the like), so that the material utilization rate can be improved, the production cost can be reduced, and the productivity can be improved on the premise of not purchasing large-scale equipment; ohmic contact between the electrode and the substrate material can be realized, and the firmness between contact surfaces meets the space use requirement; the product reliability is high.
In order to solve the technical problems, the invention adopts the technical scheme that: a preparation method of a gallium arsenide solar cell electrode combined with germanium for space comprises the following steps: coating photoresist on the surface of an active layer of an epitaxial wafer taking germanium as a substrate; placing the epitaxial wafer in a dilute hydrochloric acid solution for corrosion for a certain time, taking out the epitaxial wafer, and placing the epitaxial wafer in deionized water for washing; placing the rinsed epitaxial wafer in a mixed acid solution to be corroded for a certain time, taking out the corroded epitaxial wafer, soaking the epitaxial wafer in deionized water for a certain time, rinsing, and removing the photoresist after rinsing; preparing a gold contact layer and a silver layer on the surface of the non-active layer of the etched epitaxial wafer by using a vacuum method; protecting the non-preparation electrode surface of the epitaxial wafer with the prepared gold contact layer and the prepared silver layer, fixing the epitaxial wafer on a negative plate, immersing the negative plate into an electrolytic bath, electroplating a silver thickening layer on the surface of the silver layer, and drying after the electroplating is finished; and placing the epitaxial wafer electroplated with the silver thickening layer in a vacuum sintering furnace, heating to a certain temperature, keeping the temperature for a period of time, cooling to room temperature, and taking out to obtain the gallium arsenide solar cell electrode combined with germanium for the space.
Preferably, the vacuum method comprises an evaporation method, and the specific steps are that the corroded epitaxial wafer is placed on an evaporation fixture and placed in a vacuum coating machine, the vacuum coating machine is vacuumized and then baked, the gold contact layer is evaporated after baking is completed, and the silver layer is evaporated continuously after evaporation is completed.
Preferably, the temperature of the etched epitaxial wafer is 90-110 ℃ during baking, and the baking time is 8-12 min; the evaporation rate of the gold contact layer is 1.5-2.5 nm/s, and the evaporation thickness is 100-140 nm; the evaporation rate of the silver layer is 0.8-1.2 nm/s, and the evaporation thickness is 40-60 nm.
Preferably, the vacuum method further comprises a magnetron sputtering method, and the specific steps are that the etched epitaxial wafer is placed into a vacuum chamber for vacuumizing and then is baked, the gold contact layer is sputtered after baking is finished, and the silver layer is continuously sputtered after sputtering is finished.
Preferably, the temperature of the etched epitaxial wafer is 90-110 ℃ during baking, and the baking time is 8-12 min; the sputtering growth rate of the gold contact layer is 1.5-2.5 nm/s, and the thickness is set to be 100-140 nm; the sputtering growth rate of the silver layer is 0.8-1.2 nm/s, and the thickness is 40-60 nm.
Preferably, the dilute hydrochloric acid solution is a 5% dilute hydrochloric acid solution, and the epitaxial wafer is soaked in the dilute hydrochloric acid solution for 55-65 seconds and washed clean for multiple times; the mixed acid solution is HF HNO3:H2And soaking the rinsed epitaxial wafer in the mixed acid solution for 28-32 s, soaking the rinsed epitaxial wafer in the deionized water for 9-11 min, and rinsing for multiple times until the wafer is clean.
Preferably, the cell area of the epitaxial wafer prepared with the gold contact layer and the silver layer is immersed in the electrolyte in the electrolytic cell, the metal clip on the cathode plate being maintained above the level of the electrolyte.
Preferably, the temperature is 22-28 ℃ and the speed is 2-3 mu m/h when the silver thickening layer is electroplated, and the thickness of the silver thickening layer is 4.5-5.5 mu m; and after the electroplating is finished, washing the electroplating solution with deionized water for many times until the electroplating solution is clean, and dehydrating and drying the electroplating solution with absolute ethyl alcohol.
Preferably, the epitaxial wafer electroplated with the silver thickening layer is placed in the vacuum sintering furnace, heated to 335-345 ℃, and kept at the constant temperature for 18-22 min.
Because the gold contact layer and the silver layer are prepared by using a vacuum method and then the silver thickening layer is electroplated, the process cost is reduced, the production efficiency is improved, and the material utilization rate is also improved; because the preparation method of the gallium arsenide solar cell electrode combined with germanium for the space is used, the prepared electrode can form ohmic contact with the electrode substrate under the cell, and the firmness between contact surfaces meets the space use requirement; the potential difference of the electrodes between the electrode materials is very small, the storage is carried out under a special environment, the battery failure caused by electrochemical corrosion can not occur, and the reliability of the product is high.
Drawings
FIG. 1 is a schematic diagram of the position of an electrode of a gallium arsenide solar cell for space combined with germanium according to an embodiment of the present invention
FIG. 2 is a schematic diagram of an electrode system of a gallium arsenide solar cell for space combined with germanium according to an embodiment of the present invention
FIG. 3 is a schematic structural diagram of an electroplating apparatus according to an embodiment of the present invention
FIG. 4 is a schematic diagram of the position of the liquid level in the electroplating process according to the embodiment of the present invention
In the figure:
1. active layer 2, prepared gold contact layer and 3, metal electrode
Epitaxial wafer of silver layer
4. Substrate 5, gold contact layer 6, silver layer
7. Silver thickening layer 8, metal clip 9, battery region
10. Electrolyte level 11, cathode plate
Detailed Description
The invention is further illustrated by the following examples and figures:
in the description of the embodiments of the present invention, it should be understood that the terms "top," "bottom," "surface," and the like refer to orientations and positional relationships illustrated in the drawings, which are used for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present invention.
As shown in fig. 1, a schematic diagram of the position of an electrode of a gallium arsenide solar cell for a space combined with germanium and fig. 2, a schematic diagram of the electrode system of a gallium arsenide solar cell for a space combined with germanium, the electrode of the present invention is disposed on the surface of an inactive layer of an epitaxial wafer using germanium as a substrate, a gold contact layer 5 is disposed on the surface of the inactive layer, a silver layer 6 is disposed on the surface of the gold contact layer 5, and a silver thickening layer 7 is disposed on the surface of the silver layer 6.
The gold contact layer 5 and the silver layer 6 are prepared by a vacuum method, and then the silver thickening layer 7 is prepared by other preparation methods. The metal electrode material prepared by the vacuum method has high purity, ohmic contact is easily formed on the gold semi-contact surface of the battery, and the series resistance cannot be increased due to impurities. The metal electrode prepared by the magnetron sputtering method is easy to damage a semiconductor because the energy of particles reaching the surface is high, but the electrode related to the invention is positioned in a non-active area on the surface of the battery substrate, so the gold contact layer 5 and the silver layer 6 can be prepared by the magnetron sputtering method. Because the utilization rate of the vacuum evaporation method material is low, the magnetron sputtering method needs to regularly maintain the target material, and the two methods are not suitable for preparing thick-layer metal. Therefore, the silver layer is thickened by adopting an electroplating method after the vacuum method, the production efficiency is improved, the material utilization rate is improved, and the production cost is reduced.
Example 1
S1: etching the epitaxial wafer: protecting the surface of an active layer of an epitaxial wafer which takes germanium as a substrate and is used for preparing an electrode by coating photoresist or sticking a pyrolytic film and the like; placing the epitaxial wafer in a 5% dilute hydrochloric acid solution, and soaking for 55-65 s; after soakingTaking out the epitaxial wafer, placing the epitaxial wafer in deionized water for washing, and repeatedly washing for multiple times, preferably 10-15 times; placing the epitaxial wafer in HF HNO3:H2Soaking the mixture in a mixed acid solution with the volume ratio of O to O being 2:1:10 for 28-32 s; and taking out the epitaxial wafer after soaking, soaking the epitaxial wafer in deionized water for 9-11 min, then washing, and repeatedly washing for multiple times, preferably 10-15 times. And after taking out the epitaxial wafer, putting the epitaxial wafer into an acetone solution to remove the photoresist or tear off the pyrolytic film.
S2: placing the corroded epitaxial wafer on an evaporation fixture, placing the evaporation fixture into a vacuum coating machine, and vacuumizing; baking the mixture after the vacuum degree reaches a set value of a machine, wherein the baking temperature is set to be 90-110 ℃, and the baking time is 8-12 min; after baking, putting a gold layer substance into the crucible, carrying out evaporation coating on the gold contact layer 5, wherein the evaporation coating rate is 1.5-2.5 nm/s, the thickness is set to be 100-140 nm, and cooling the crucible for 15min after evaporation coating; putting a silver layer substance into the other crucible, and continuing to perform evaporation plating on the silver layer 6, wherein the evaporation plating rate is 0.8-1.2 nm/s, and the thickness is 40-60 nm; and cooling to room temperature after the evaporation is finished, and taking out the epitaxial wafer after the evaporation is finished.
S3: after the outer gold contact layer 5 and the silver layer 6 are evaporated, the silver layer 6 is thickened by electroplating to ensure the weldability of the product.
And preparing a protective layer on the surface of the non-electroplating electrode by using the epitaxial wafer 2 with the prepared gold contact layer 5 and the prepared silver layer 6, wherein the protective layer can be formed by coating materials such as photoresist or paraffin and can also be formed by sticking films such as a pyrolytic film. Then, fixing the epitaxial wafer on a cathode plate 11 as shown in the structural schematic diagram of the electroplating device in FIG. 3, conducting electricity by using a metal clamp 8 and fixing; the epitaxial wafer 2 is immersed in the electrolyte in an electrolytic bath, wherein the metal clamps 8 are kept above the electrolyte level 10 and the cell area 9 is completely immersed as shown in the schematic liquid level position of the electroplating process in fig. 4. Electroplating the electrode at 22-28 deg.C at a speed of 2-3 μm/h to form a silver-electroplated thickening layer 7 with a thickness of 4.5-5.5 μm; after the electroplating is finished, the epitaxial wafer is washed for a plurality of times, preferably 10 to 15 times, dehydrated and dried by absolute ethyl alcohol.
S4: in order to ensure the binding force of the plating layer and the substrate, the metal layer is subjected to heat treatment, and the interface binding force is improved through silver interdiffusion. And (3) placing the epitaxial wafer electroplated with the silver thickening layer 7 in a vacuum sintering furnace, vacuumizing, heating to 335-345 ℃ after the vacuum degree reaches an equipment set value, keeping the temperature for 18-22 min, cooling to room temperature along with the furnace, introducing nitrogen or compressed air, and taking out the epitaxial wafer after heat treatment.
According to the method, the gallium arsenide solar cell electrode combined with germanium for the space can be prepared, the space use requirement can be met, the material cost can be reduced, meanwhile, the occupied time of vacuum equipment can be saved, and the productivity is improved.
Example 2
S1: etching the epitaxial wafer: protecting the surface of an active layer of an epitaxial wafer which takes germanium as a substrate and is used for preparing an electrode by coating photoresist or sticking a pyrolytic film and the like; placing the epitaxial wafer in a 5% dilute hydrochloric acid solution, and soaking for 55-65 s; after soaking, taking out the epitaxial wafer, placing the epitaxial wafer in deionized water for washing, and repeatedly washing for multiple times, preferably 10-15 times; placing the epitaxial wafer in HF HNO3:H2Soaking the mixture in a mixed acid solution with the volume ratio of O to O being 2:1:10 for 28-32 s; after soaking, taking out the epitaxial wafer, soaking in deionized water for 9-11 min, then washing, and repeatedly washing for multiple times, preferably 10-15 times; and then the epitaxial wafer is placed in deionized water for washing. And taking out the epitaxial wafer, and putting the epitaxial wafer into an acetone solution to remove the photoresist or tear off the pyrolytic film.
S2: placing the corroded epitaxial wafer on a special loader, taking out the corroded epitaxial wafer by a mechanical arm, placing the corroded epitaxial wafer into a first vacuum chamber, vacuumizing, and baking for 8-12 min when the vacuum degree reaches a set value of a machine, wherein the baking temperature is set to 90-110 ℃; sputtering a gold contact layer 5 after baking, wherein the growth rate is 1.5-2.5 nm/s, and the thickness is set to be 100-140 nm; taking the silver layer into a second vacuum chamber by a mechanical arm to continuously sputter a silver layer 6, wherein the growth rate is 0.8-1.2 nm/s, and the thickness is 40-60 nm; and (4) after the sputtering is finished, filling nitrogen and compressed air, opening a door of the vacuum chamber, and taking out the sputtered epitaxial wafer.
S3: after sputtering the outer gold contact layer 5 and the silver layer 6, the silver layer 6 is thickened by electroplating to ensure the solderability of the product.
And preparing a protective layer on the surface of the non-electroplating electrode by using the epitaxial wafer 2 with the prepared gold contact layer 5 and the prepared silver layer 6, wherein the protective layer can be formed by coating materials such as photoresist or paraffin and can also be formed by sticking films such as a pyrolytic film. Then, fixing the epitaxial wafer on a cathode plate 11 as shown in the structural schematic diagram of the electroplating device in FIG. 3, conducting electricity by using a metal clamp 8 and fixing; the epitaxial wafer 2 is immersed in the electrolyte in an electrolytic bath, wherein the metal clamps 8 are kept above the electrolyte level 10 and the cell area 9 is completely immersed as shown in the schematic liquid level position of the electroplating process in fig. 4. Electroplating the electrode at 25 ℃ at a speed of 2-3 μm/h, wherein the thickness of the silver electroplating thickening layer 7 is 4.5-5.5 μm; after the electroplating is finished, the epitaxial wafer is washed for a plurality of times, preferably 10 to 15 times, dehydrated and dried by absolute ethyl alcohol.
S4: in order to ensure the binding force of the plating layer and the substrate, the metal layer is subjected to heat treatment, and the interface binding force is improved through silver interdiffusion. And (3) placing the epitaxial wafer electroplated with the silver thickening layer 7 in a vacuum sintering furnace, vacuumizing, heating to 335-345 ℃ after the vacuum degree reaches an equipment set value, keeping the temperature for 18-22 min, cooling to room temperature along with the furnace, introducing nitrogen or compressed air, and taking out the epitaxial wafer after heat treatment.
According to the method, the gallium arsenide solar cell electrode combined with germanium for the space can be prepared, the space use requirement can be met, the material cost can be reduced, meanwhile, the occupied time of vacuum equipment can be saved, and the productivity is improved.
Although the embodiments of the present invention have been described in detail, the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (9)
1. A preparation method of a gallium arsenide solar cell electrode combined with germanium for space comprises the following steps:
coating photoresist on the surface of an active layer of an epitaxial wafer taking germanium as a substrate;
placing the epitaxial wafer in a dilute hydrochloric acid solution for corrosion for a certain time, taking out the epitaxial wafer, and placing the epitaxial wafer in deionized water for washing;
placing the rinsed epitaxial wafer in a mixed acid solution to be corroded for a certain time, taking out the corroded epitaxial wafer, soaking the epitaxial wafer in deionized water for a certain time, rinsing, and removing the photoresist after rinsing;
preparing a gold contact layer and a silver layer on the surface of the non-active layer of the etched epitaxial wafer by using a vacuum method;
protecting the non-prepared electrode surface of the epitaxial wafer with the prepared gold contact layer and the prepared silver layer, fixing the epitaxial wafer on a negative plate, immersing the negative plate into an electrolytic bath, electroplating a silver thickening layer on the surface of the silver layer, and drying after the electroplating is finished;
and placing the epitaxial wafer electroplated with the silver thickening layer in a vacuum sintering furnace, heating to a certain temperature, keeping the temperature for a period of time, cooling to room temperature, and taking out to obtain the gallium arsenide solar cell electrode combined with germanium for the space.
2. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: the vacuum method comprises an evaporation method, and the specific steps are that the corroded epitaxial wafer is placed on an evaporation fixture and placed in a vacuum coating machine, the vacuum coating machine is vacuumized and then baked, the gold contact layer is evaporated after baking is finished, and the silver layer is evaporated continuously after evaporation is finished.
3. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 2, wherein: baking the etched epitaxial wafer at the temperature of 90-110 ℃ for 8-12 min; the evaporation rate of the gold contact layer is 1.5-2.5 nm/s, and the evaporation thickness is 100-140 nm; the evaporation rate of the silver layer is 0.8-1.2 nm/s, and the evaporation thickness is 40-60 nm.
4. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: the vacuum method also comprises a magnetron sputtering method, and the specific steps are that the corroded epitaxial wafer is placed into a vacuum chamber for vacuum pumping and then is baked, the gold contact layer is sputtered after baking is finished, and the silver layer is continuously sputtered after sputtering is finished.
5. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 4, wherein: baking the etched epitaxial wafer at the temperature of 90-110 ℃ for 8-12 min; the sputtering growth rate of the gold contact layer is 1.5-2.5 nm/s, and the thickness is set to be 100-140 nm; the sputtering growth rate of the silver layer is 0.8-1.2 nm/s, and the thickness is 40-60 nm.
6. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: the dilute hydrochloric acid solution is 5% dilute hydrochloric acid solution, the epitaxial wafer is soaked in the dilute hydrochloric acid solution for 55-65 s, and the epitaxial wafer is washed clean for multiple times; the mixed acid solution is HF HNO3:H2And soaking the rinsed epitaxial wafer in the mixed acid solution for 28-32 s, soaking the rinsed epitaxial wafer in the deionized water for 9-11 min, and rinsing for multiple times until the wafer is clean.
7. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: and immersing the battery area of the epitaxial wafer, which is prepared with the gold contact layer and the silver layer and the other side of which is provided with a protective layer, into the electrolyte in the electrolytic bath, wherein the metal clamp on the cathode plate is kept above the liquid level of the electrolyte.
8. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: electroplating the silver thickening layer at the temperature of 22-28 ℃ and the speed of 2-3 mu m/h, wherein the thickness of the silver thickening layer is 4.5-5.5 mu m; and after the electroplating is finished, washing the electroplating solution with deionized water for many times until the electroplating solution is clean, and dehydrating and drying the electroplating solution with absolute ethyl alcohol.
9. The method for preparing an electrode of a gallium arsenide solar cell combined with germanium as claimed in claim 1, wherein: and placing the epitaxial wafer electroplated with the silver thickening layer in the vacuum sintering furnace, heating to 335-345 ℃, and keeping the temperature for 18-22 min.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
| CN101764174A (en) * | 2008-12-25 | 2010-06-30 | 上海太阳能工程技术研究中心有限公司 | Method for manufacturing light-focusing multi-junction gallium arsenide solar cell |
| TW201041088A (en) * | 2009-05-07 | 2010-11-16 | Atomic Energy Council | Ohmic contact having silver material |
| CN105047762A (en) * | 2015-08-27 | 2015-11-11 | 河北英沃泰电子科技有限公司 | Process for manufacturing gallium arsenide solar cell |
| CN105489664A (en) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | Preparation method of solar cell |
| CN106684163A (en) * | 2016-12-28 | 2017-05-17 | 中国电子科技集团公司第十八研究所 | Method for preparing solar battery grid line electrode through electroplating method |
-
2020
- 2020-12-16 CN CN202011485427.7A patent/CN112599613A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
| CN101764174A (en) * | 2008-12-25 | 2010-06-30 | 上海太阳能工程技术研究中心有限公司 | Method for manufacturing light-focusing multi-junction gallium arsenide solar cell |
| TW201041088A (en) * | 2009-05-07 | 2010-11-16 | Atomic Energy Council | Ohmic contact having silver material |
| CN105047762A (en) * | 2015-08-27 | 2015-11-11 | 河北英沃泰电子科技有限公司 | Process for manufacturing gallium arsenide solar cell |
| CN105489664A (en) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | Preparation method of solar cell |
| CN106684163A (en) * | 2016-12-28 | 2017-05-17 | 中国电子科技集团公司第十八研究所 | Method for preparing solar battery grid line electrode through electroplating method |
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