CN112589108A - Method for preparing micron nano particles with binary metal shell structure in batch - Google Patents
Method for preparing micron nano particles with binary metal shell structure in batch Download PDFInfo
- Publication number
- CN112589108A CN112589108A CN202011355643.XA CN202011355643A CN112589108A CN 112589108 A CN112589108 A CN 112589108A CN 202011355643 A CN202011355643 A CN 202011355643A CN 112589108 A CN112589108 A CN 112589108A
- Authority
- CN
- China
- Prior art keywords
- metal
- melting
- shell structure
- vacuum chamber
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 title claims abstract description 71
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000010953 base metal Substances 0.000 claims abstract description 17
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 238000009833 condensation Methods 0.000 claims abstract description 4
- 230000005494 condensation Effects 0.000 claims abstract description 4
- 238000010891 electric arc Methods 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 19
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 description 14
- 239000002131 composite material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000012858 packaging process Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 150000003378 silver Chemical group 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0553—Complex form nanoparticles, e.g. prism, pyramid, octahedron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
Abstract
The invention discloses a method for preparing micron nano particles with a binary metal shell structure in batches, which comprises the steps of placing a high-melting-point base metal plate as a core structure on an anode plane plate in a special equipment vacuum chamber, and then placing a low-melting-point noble metal sheet as a shell structure on the high-melting-point metal plate; vacuumizing a vacuum chamber, filling argon and hydrogen, using a high-melting-point metal plate to contact and trigger electric arc, evaporating high-melting-point metal and low-melting-point metal to generate atomic steam and escape, condensing the high-melting-point metal into an inner core in the steam condensation process, then generating a shell structure on the surface of the low-melting-point metal, depositing generated binary metal shell structure micron nano particles on a cold trap, and collecting shell structure particles formed by a noble metal shell and a base metal inner core.
Description
Technical Field
The invention relates to a batch preparation method of micron nano particles with a binary metal shell structure, in particular to a batch preparation method of micron nano particles with a shell structure, which are composed of a noble metal shell and a base metal core.
Background
The conductive paste used in the prior high-technology chip packaging process is mostly micron-sized metal powder prepared by a chemical method, and the conductive paste is prepared by the chemical method, so that the process is complex, the environment is polluted, in the preparation process, more surfactants are inevitably adopted, the surface of product particles is remained, and the removal is difficult, so that the surface structure of micron-sized metal particles is influenced; when the metal particles are used in the conductive phase of a high-tech conductive paste, the residue of the surfactant on the surface of the particles prepared by the chemical method brings about a considerable adverse effect on the performance. There is a need to develop a method for preparing micron/nanometer metal powder with energy saving, environmental protection and no chemical substance residue, and to prepare micron/nanometer metal with clean surface for high-technology chip packaging.
The invention adopts a physical method to prepare micron nano metal particles under the conditions of sealing, cleaning and specific atmosphere, and prepares the shell structure composite metal particles with a noble metal shell and a base metal core, the particle surface is clean and pollution-free, the consumption of noble metal is reduced, the production cost is reduced, and the performance of the base metal particles is improved; the micron nano particles with the shell structure can meet the requirements of low-temperature sintering and cost reduction of a high-technology chip packaging process, and represent the development direction of the chip packaging process.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a method for preparing micron nano particles with a binary metal shell structure in batches, further develops a conductive phase material of a high-performance low-temperature-sinterable conductive metal material for a high-technology chip packaging process, and meets the requirements of a high-frequency, high-temperature and long-time working metal conductive phase for high-technology chip packaging.
The technical scheme is as follows: selecting metal components according to the crystal structure and the physical and chemical properties of metal to ensure that the micron-nanometer-sized binary metal shell structure metal particles with the required shell structure are prepared, and preparing the micron-nanometer metal particles with the binary metal shell structure in a closed, clean and specific atmosphere; the metal material is heated and vaporized at a strictly controlled temperature to form metal atom steam, an atom cluster is formed by collision, the high-melting-point metal is firstly condensed into an inner core, then the low-melting-point metal generates a shell structure on the surface of the low-melting-point metal, the generated micron nano particles with the binary metal shell structure are deposited on the cold hydrazine in a vacuum chamber, and the micron nano particles with the shell structure consisting of a noble metal shell and a base metal inner core are collected, so that the aims of reducing the consumption of the noble metal, reducing the production cost and improving the performance of the base metal are fulfilled.
The method for preparing the micron nano particles with the binary metal shell structure in batches comprises the following steps:
(1) selecting a preparation device of ZL 94218594.3 (a nano NiPd catalyst preparation device) which is applied for patent, firstly placing a plate of base metal with high melting point on a plane plate of an anode in a vacuum chamber, and then placing a thin sheet of noble metal with low melting point on the plate with high melting point for compressing;
(2) closing the vacuum chamber housing of the preparation apparatus, forming a vacuum chamber therein, and then pumping the vacuum chamber to 1.0X 10-3Pa; then introducing high-purity argon to 1.0 multiplied by 103Pa, the vacuum chamber is pumped again to 1.0X 10-3Pa; then, according to the requirements of preparation conditions, introducing a certain proportion of high-purity hydrogen and high-purity argon, and controlling the pressure to be 4.0X 103Pa；
(3) Switching on a heating power supply of the device, adjusting the position of a cathode, contacting a plate of high-melting-point base metal and initiating an electric arc, controlling the current of the power supply to be 150-200A, controlling the voltage to be 35-50V, and melting the high-melting-point base metal and the low-melting-point noble metal to form metal vapor;
(4) in the condensation process of metal atom steam, high-melting-point metal is firstly condensed into an inner core, then low-melting-point metal generates a shell structure on the surface of the low-melting-point metal, and generated micron nano particles with a binary metal shell structure are deposited on cold hydrazine in a vacuum chamber;
(5) after the preparation is finished, when the interior of the preparation device is cooled to room temperature, an air extraction valve is opened to remove indoor air, then air is introduced into the preparation device, and when the internal pressure and the external pressure of the preparation device are consistent, a vacuum chamber shell of the preparation device is opened, so that the powder of the micron nano particles with the binary metal shell structure on the collector can be collected.
Has the advantages that: the method for preparing the micron nano particles with the binary metal shell structure in batches has universality on most metal materials, base metals comprise copper, aluminum, iron, cobalt, nickel and the like, and noble metals comprise gold, silver, palladium, platinum and the like; the applicable raw materials are wide in range, stable in size and good in application effect; the composite metal conductive particles with the binary metal shell structure in the micron and nanometer size range are prepared by a physical method under the conditions of sealing, cleaning and specific atmosphere, the process is relatively simple, and the surfaces of the product particles are clean and pollution-free; the shell structure micron nano particles formed by the noble metal shells and the base metal cores are obtained by optimally selecting metal components, so that the use amount of noble metals is reduced, the cost is reduced, and the performance of the base metal particles is improved; the metal conductive particles with the micron-nanometer shell structure can meet the requirements of low-temperature sintering and cost reduction of a high-technology chip packaging process, and represent the development direction of the chip packaging process.
Drawings
Fig. 1 is a transmission electron microscope image and a power spectrum image of a binary metal shell structure composite metal particle obtained in example 1 of the present invention, in which copper is an inner core of the binary metal shell structure composite metal particle, silver is an outer shell of the binary metal shell structure composite metal particle, fig. 1a is a high angle annular dark field phase (HAADF) STEM image of the copper/silver binary metal shell structure particle, fig. 1b is a power spectrum image of a copper element and a silver element of the copper/silver binary metal shell structure particle, fig. 1c is a power spectrum image of a silver element of the copper/silver binary metal shell structure particle, and fig. 1d is a power spectrum image of a copper element of the copper/silver binary metal shell structure particle;
fig. 2 is a high-resolution electron microscope image of the binary metal shell structure composite metal particle obtained in example 2 of the present invention, where nickel is the core of the binary metal shell structure composite metal particle and cerium is the shell of the binary metal shell structure composite metal particle.
The specific implementation mode is as follows:
the invention is further described with reference to the following examples, but the scope of the invention is not limited thereto.
Example 1:
a preparation device in ZL 94218594.3 is adopted, a plate of high-melting-point copper (oxygen-free copper, melting point 1083 ℃ and purity 99.99%) is placed on a flat plate of an anode in a vacuum chamber, and then a thin piece of low-melting-point silver (melting point 961.8 ℃ and purity 99.99%) is placed on the plate of high-melting-point to be compressed, so that the silver thin piece is formedThe area of the sheet should be smaller than that of the copper plate; closing the vacuum chamber shell of the preparation equipment, and pumping the vacuum chamber to 1.0 × 10-3Pa; then introducing high-purity argon to 1.0 multiplied by 103Pa, the vacuum chamber is pumped again to 1.0X 10-3Pa; after that, according to 2: 1, introducing high-purity hydrogen and high-purity argon, and controlling the pressure in the device at 4.0 x 103Pa; switching on a heating power supply of the device, adjusting the position of a cathode, contacting with a copper plate block with a high melting point and initiating an electric arc, wherein the current of the power supply is 150A, the voltage is 35V, and a copper metal plate block with a high melting point and a silver metal sheet with a low melting point both start to melt and form metal vapor; in the condensation process of the copper atom vapor and the silver atom vapor, the vapor of the copper metal with high melting point is firstly condensed into an inner core, then the vapor of the silver metal with low melting point generates a shell structure on copper particles, and finally, the binary metal shell structure nano particles which take the copper metal as the inner core and the silver metal as the shell are generated; after the preparation is finished, the interior of the vacuum chamber of the preparation device is cooled to room temperature, the air extraction valve is opened to remove the air in the chamber, then air is introduced into the preparation device, when the internal pressure and the external pressure of the device are consistent, the vacuum chamber shell of the preparation device is opened, and the powder of the micron nano particles with the binary metal shell structure in the device is collected.
The average grain diameter of the obtained micron nano particles with the binary metal shell structure is 85.48nm through the test of a Malvern laser particle sizer; the surface scanning test of the energy spectrum shows that a strong signal of copper element is presented at each position of a product particle, but the signal of the silver element is only obvious in partial area of the spherical particle, and the rest area is weaker, which shows that the copper element forms the inner core of the metal particle with the binary metal shell structure, the silver element is distributed on the surface of the particle, and the content of the silver element in partial area is lower; the existence of silver on the surface of the composite metal particle with the binary metal shell structure obviously improves the conductivity of the copper particle.
Example 2:
the high-melting-point metal is a nickel (melting point of 1453 ℃ and purity of 99.99%) plate, and the low-melting-point metal is a cerium (melting point of 798 ℃ and purity of 99.99%) sheet; the rest is the same as in example 1.
The average grain diameter of the obtained micron nano-particles with the binary metal shell structure is 60.50 nm.
Example 3:
the high-melting-point metal is an iron (melting point of 1538 ℃ and purity of 99.99%) plate, and the low-melting-point metal is a tin (melting point of 231 ℃ and purity of 99.99%) sheet; the rest is the same as in example 1.
The average particle diameter of the obtained micron nano particle with the binary metal shell structure is 145.20 nm.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Not all embodiments are exhaustive. All obvious changes and modifications which are obvious to the technical scheme of the invention are covered by the protection scope of the invention.
Claims (1)
1. A method for preparing micron nano particles with a binary metal shell structure in batches is characterized by comprising the following steps:
(1) in a vacuum chamber, firstly, a plate of base metal with a high melting point is placed on a plane plate of an anode, and then, a thin slice of noble metal with a low melting point is placed on the plate with a high melting point and is compressed; base metals include copper, aluminum, iron, cobalt, nickel, etc., and noble metals include gold, silver, palladium, platinum, etc.;
(2) closing the vacuum chamber shell, pumping the vacuum chamber to 1.0 × 10-3Pa; then introducing high-purity argon to 1.0 multiplied by 103Pa, the vacuum chamber is pumped again to 1.0X 10-3Pa; then, according to the requirements of preparation conditions, introducing a certain proportion of high-purity hydrogen and high-purity argon, and controlling the pressure to be 4.0X 103Pa；
(3) Switching on a heating power supply of the device, adjusting the position of a cathode, contacting a plate of high-melting-point base metal and initiating an electric arc, controlling the current of the power supply to be 150-200A, controlling the voltage to be 35-50V, and melting the high-melting-point base metal and the low-melting-point noble metal to form metal vapor;
(4) in the condensation process of metal atom steam, metal with a high melting point is firstly condensed into an inner core, then metal with a low melting point generates a shell structure on the surface of the metal, and generated micron nano particles with a binary metal shell structure are deposited on cold hydrazine in a vacuum chamber;
(5) after the preparation is finished, when the temperature in the vacuum chamber is reduced to room temperature, the air extraction valve is opened, the working gas in the vacuum chamber is extracted, then air is introduced into the device, when the internal pressure and the external pressure are consistent, the device is opened to collect powder, and the powder of the micron nano particles with the binary metal shell structure is collected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011355643.XA CN112589108A (en) | 2020-11-27 | 2020-11-27 | Method for preparing micron nano particles with binary metal shell structure in batch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011355643.XA CN112589108A (en) | 2020-11-27 | 2020-11-27 | Method for preparing micron nano particles with binary metal shell structure in batch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112589108A true CN112589108A (en) | 2021-04-02 |
Family
ID=75184425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011355643.XA Pending CN112589108A (en) | 2020-11-27 | 2020-11-27 | Method for preparing micron nano particles with binary metal shell structure in batch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112589108A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1102361A (en) * | 1994-08-29 | 1995-05-10 | 青岛化工学院 | Preparation method of high melting point nm metal catalyzer |
| CN1105289A (en) * | 1994-08-29 | 1995-07-19 | 青岛化工学院 | Process for preparing nm-particle Ni-Pd alloy catalyst |
| US20030129786A1 (en) * | 2001-11-01 | 2003-07-10 | Hyun-Kwang Seok | Method for fabricating Si-Al alloy packaging material |
| US20040079194A1 (en) * | 2000-10-02 | 2004-04-29 | Shuichi Nakata | Functional alloy particles |
| CN1564726A (en) * | 2002-09-18 | 2005-01-12 | 株式会社荏原制作所 | Joining material and joining method |
| CN102642095A (en) * | 2011-02-17 | 2012-08-22 | 富士通株式会社 | Electroconductive bonding material comprising three types of metal particles with different melting points and its use for bonding an electronic component to a substrate |
| CN102781576A (en) * | 2010-03-01 | 2012-11-14 | 株式会社则武 | Catalyst having metal microparticles supported thereon, and use thereof |
| CN102822389A (en) * | 2010-04-07 | 2012-12-12 | 丰田自动车株式会社 | Core-shell type metal nanoparticles and method for manufacturing the same |
| CN105127414A (en) * | 2015-09-29 | 2015-12-09 | 安徽工业大学 | Preparation method for silver-cladding nickel nano powder material adopting core-shell structure |
| CN111112597A (en) * | 2020-01-16 | 2020-05-08 | 深圳第三代半导体研究院 | Ternary metal core-shell structure micro-nano particle and preparation method thereof |
-
2020
- 2020-11-27 CN CN202011355643.XA patent/CN112589108A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1102361A (en) * | 1994-08-29 | 1995-05-10 | 青岛化工学院 | Preparation method of high melting point nm metal catalyzer |
| CN1105289A (en) * | 1994-08-29 | 1995-07-19 | 青岛化工学院 | Process for preparing nm-particle Ni-Pd alloy catalyst |
| US20040079194A1 (en) * | 2000-10-02 | 2004-04-29 | Shuichi Nakata | Functional alloy particles |
| US20030129786A1 (en) * | 2001-11-01 | 2003-07-10 | Hyun-Kwang Seok | Method for fabricating Si-Al alloy packaging material |
| CN1564726A (en) * | 2002-09-18 | 2005-01-12 | 株式会社荏原制作所 | Joining material and joining method |
| CN102781576A (en) * | 2010-03-01 | 2012-11-14 | 株式会社则武 | Catalyst having metal microparticles supported thereon, and use thereof |
| CN102822389A (en) * | 2010-04-07 | 2012-12-12 | 丰田自动车株式会社 | Core-shell type metal nanoparticles and method for manufacturing the same |
| CN102642095A (en) * | 2011-02-17 | 2012-08-22 | 富士通株式会社 | Electroconductive bonding material comprising three types of metal particles with different melting points and its use for bonding an electronic component to a substrate |
| CN105127414A (en) * | 2015-09-29 | 2015-12-09 | 安徽工业大学 | Preparation method for silver-cladding nickel nano powder material adopting core-shell structure |
| CN111112597A (en) * | 2020-01-16 | 2020-05-08 | 深圳第三代半导体研究院 | Ternary metal core-shell structure micro-nano particle and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101142534B1 (en) | Process for producing si-based nanocomposite anode material for lithium secondary battery and lithium secondary battery including the same | |
| CN101698909B (en) | Method for preparing molybdenum-copper alloy | |
| CN109897982B (en) | High-airtightness low-free-oxygen-content nano dispersion copper alloy and short-process preparation process | |
| JP2007254841A (en) | Method for producing metal hyperfine particle in which organic matter film is formed on the surface and production device used for the production method | |
| JP2013536316A (en) | Potassium / molybdenum composite metal powder, powder blend, product thereof, and method for producing photovoltaic cell | |
| TW201542832A (en) | Nickel powder | |
| Luo et al. | Fabrication of W–Cu/La2O3 composite powder with a novel pretreatment prepared by electroless plating and its sintering characterization | |
| Li et al. | Nd-Mg-Ni alloy electrodes modified by reduced graphene oxide with improved electrochemical kinetics | |
| CN109365799A (en) | Preparation method and Metal Substrate-graphene electric contact of graphene coated metal-powder | |
| CN112589108A (en) | Method for preparing micron nano particles with binary metal shell structure in batch | |
| CN108545784B (en) | Small-size metal oxide nanosheet and preparation method thereof | |
| CN103050279A (en) | Base metal inner electrode material for multilayer ceramic capacitor and preparation method thereof | |
| CN105798319B (en) | Preparation method of silver-tungsten electrical contact material, electrical contact material and electrical contact | |
| CN106847528B (en) | A kind of preparation method of novel nano oxide super capacitor electrode material | |
| CN102969082B (en) | The preparation method of Ag coated Ni composite nano powder electrocondution slurry | |
| CN1297486C (en) | Method for preparing tungsten trioxide blue tungsten and tungsten powder in Nano grade | |
| CN105127414B (en) | A kind of preparation method of core shell structure silver nickel coat nano-powder material | |
| CN107326250A (en) | The supper-fast method for preparing high-performance ZrNiSn block thermoelectric materials of one step | |
| CN108080631B (en) | Collector electrode material, preparation method thereof, surface treatment method and collector comprising collector electrode material | |
| CN107983963A (en) | A kind of low temperature preparation method of pure W-Cu nanocomposite powder | |
| CN113488399B (en) | Superfine pitch semiconductor interconnection structure and forming method thereof | |
| WO2011129565A2 (en) | Method for producing tantalum (ta) powder using eutectic alloys | |
| CN113594541A (en) | Method for preparing LAGP-based solid electrolyte by plasma magnetic filtration technology | |
| JP2012153551A (en) | Metal-supporting boron nitride nanostructure, and method for producing the same | |
| CN107597158B (en) | Preparation method of mesoporous carbon-tungsten carbide composite material platinum-supported catalyst |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210402 |
|
| RJ01 | Rejection of invention patent application after publication |