CN112584624A - Multi-angle exposure equipment and manufacturing method of electroplated metal wire - Google Patents
Multi-angle exposure equipment and manufacturing method of electroplated metal wire Download PDFInfo
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- CN112584624A CN112584624A CN201910922832.1A CN201910922832A CN112584624A CN 112584624 A CN112584624 A CN 112584624A CN 201910922832 A CN201910922832 A CN 201910922832A CN 112584624 A CN112584624 A CN 112584624A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/062—Etching masks consisting of metals or alloys or metallic inorganic compounds
Abstract
The invention discloses a multi-angle exposure device and a manufacturing method of an electroplated metal wire, wherein the manufacturing method comprises the following steps: forming a seed metal wire layer on a transparent substrate, wherein the wire of the seed metal wire layer is manufactured; forming a photoresist layer on the seed metal wire layer; using the seed metal wire layer as a mask layer, and performing scattering type exposure on the photoresist layer through the seed metal wire layer by a multi-angle exposure device; removing the unexposed photoresist layer to expose the seed metal wire layer; electroplating the seed metal wire layer to a predetermined thickness to form a metal wire layer; and removing the residual photoresist layer. The invention has simple process, easy operation and low cost, and greatly improves the yield of the electroplating process with high depth-to-width ratio.
Description
Technical Field
The present invention relates to a metal plating technique, and more particularly to a multi-angle exposure apparatus and a method for manufacturing a metal plating line.
Background
With the rapid development of portable electronic devices, the miniaturization of components and the requirements of reducing the line width of circuit boards, improving the precision and reducing the power consumption make the high aspect ratio copper electroplating process become a remarkable technology.
Currently, in the copper electroplating process with high aspect ratio, the accuracy can reach the degree that the line width is between 1 micron and 15 microns, and the thickness is between 10 microns and 100 microns. However, in order to achieve such accuracy, it is necessary to perform exposure and development processes. In order to fabricate the copper wire with high aspect ratio, an ultra-thin seed copper metal layer is formed on the substrate, and then the process is performed by forming a photoresist layer, exposing and developing, electroplating, removing the photoresist layer, etching, and the like. However, these processes affect the resistance of the copper lines and thus the accuracy of the copper lines due to over-etching of the copper metal surface after electroplating in the final etching process.
Another method for fabricating a high aspect ratio conductive line is to use a lift-off photoresist layer/negative photoresist layer dual-layer photoresist technique, such as taiwan patent No. I658483, in which a lift-off photoresist process is used to form a seed circuit metal layer on a seed metal layer, and then a high aspect ratio metal circuit is electroplated from the seed circuit metal layer without an etching process. The process applies the double-layer photoresist technology, and the double-layer photoresist needs higher technical strength for exposure and development at the same time, and is difficult to manufacture.
Therefore, how to simplify the electroplating process, so that the electroplating process can be simpler and more precise, and the over-etching problem caused by etching after electroplating will not occur, becomes the development direction required by the current electroplating technology developers.
Disclosure of Invention
The present invention uses the manufactured metal wire seed layer as a mask and uses a scattering layer as an auxiliary layer for back exposure to solve the diffraction problem generated by exposure when the metal wire seed layer is used as a mask, so as to accurately manufacture the structure required by negative photoresist exposure.
The invention aims to provide a method for manufacturing an electroplated metal wire, which comprises the following steps: forming a seed metal wire layer on a transparent substrate, wherein the wire of the seed metal wire layer is manufactured; forming a photoresist layer on the seed metal wire layer; using the seed metal wire layer as a mask layer, and performing scattering type exposure on the photoresist layer through the seed metal wire layer by a multi-angle exposure device; removing the unexposed photoresist layer to expose the seed metal wire layer; electroplating the seed metal wire layer to a predetermined thickness to form a metal wire layer; and removing the residual photoresist layer.
In some embodiments, the multi-angle exposure apparatus is selected from: an exposure device which uses a plurality of exposure light sources to arrange in an emission angle of n degrees to-n degrees or an exposure device which uses a light guide lens to enable the exposure light sources to emit the emission angle of n degrees to-n degrees with the vertical line of the transparent substrate; wherein n is an arbitrary number between 1 and 45.
In some embodiments, the material of the seed metal layer is selected from copper metal or alloys thereof.
In some embodiments, the metal line layer has an aspect ratio of 1:1 to 1:10 and a line width of 3 to 15 microns.
In some embodiments, the thickness is between 10 microns and 100 microns.
In some embodiments, the thickness is between 3 microns to 15 microns.
In some embodiments, the thickness is between 3 microns to 30 microns.
In some embodiments, the thickness is between 5 microns to 15 microns.
In some embodiments, the thickness is between 5 microns to 30 microns.
The invention further provides multi-angle exposure equipment, which uses a plurality of exposure light sources to be arranged into emission angles of n degrees to-n degrees, or uses a light guide lens to enable the exposure light sources to emit the emission angles of n degrees to-n degrees with the vertical line of the transparent substrate; wherein n is an arbitrary number between 1 and 45.
In order to make the aforementioned and other objects, features, and advantages of the present invention comprehensible, several preferred embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a flow chart of a method for fabricating a plated metal wire according to the present invention;
FIGS. 2A-2K illustrate an embodiment of a process flow for forming a plated metal line of the present invention;
FIGS. 3A-3J illustrate another embodiment of a process flow for electroplating metal lines according to the present invention.
Symbolic illustration in the drawings:
10 a transparent substrate;
20 seed metal layers;
21 a seed metal wire layer;
29 a metal wiring layer;
30. 31 a photoresist layer;
40. 41, 42 photoresist layer;
70 mask;
80 ultraviolet light;
90 multi-angle exposure equipment;
91. 92 ultraviolet light;
theta launch angle;
s101 to S106.
Detailed Description
According to the embodiment of the invention, the manufactured metal wire seed layer is used as a photomask, and a scattering layer is used as an auxiliary layer for back exposure, so that the diffraction problem generated by exposure when the metal wire seed layer is used as the photomask is solved, the structure required by negative photoresist exposure can be accurately manufactured, the manufacturing process is simple and easy to implement, the cost is low, and the yield of the high-aspect-ratio electroplating process is greatly improved.
Referring to fig. 1, a flow chart of a method for fabricating a plated metal wire according to the present invention is disclosed, and an embodiment of the fabrication flow shown in fig. 2A-2K and fig. 3A-3J includes:
step S101: a seed metal wire layer is formed on a transparent substrate, and the wires of the seed metal wire layer are manufactured. There are two methods for fabricating the seed metal conductor layer in this step, one of which is to use exposure, development and etching (fig. 2A-2F); the second is to use Lift-off photoresist (Lift-off) (FIG. 3A-3E); both techniques are applicable.
FIGS. 2A-2F are schematic cross-sectional views illustrating a process for forming a conductive line of a seed metal layer by using an exposure, development and etching technique. Fig. 2A is a schematic cross-sectional view of a seed metal layer 20 formed on a transparent substrate 10. The method for forming the seed metal layer 20 can adopt a sputtering method or a spraying method to gradually form the seed metal layer 20 with the thickness of 1.5 μm to 20 μm on the transparent substrate 10; the transparent substrate 10 may be a glass substrate or a plastic substrate. Fig. 2B illustrates forming a photoresist layer 30 on the seed metal layer 20, wherein the photoresist layer 30 may be a positive photoresist or a negative photoresist, and the thickness may be 15 μm to 20 μm, and the photoresist layer may be formed by spin coating or spraying. FIG. 2C illustrates a photo mask 70 used to expose the photoresist layer 30 with UV light 80; the mask 70 is a mask with a patterned conductive line. In FIG. 2D, the photoresist layer 30 is developed, and the photoresist layer 31 is left to prevent the seed metal layer 20 from being etched. Fig. 2E is a schematic cross-sectional view after etching, and it can be seen that the seed metal layer not covered by the photoresist layer 31 has been etched away, and the seed metal layer 20 only leaves the seed metal wire layer 21. FIG. 2F shows the seed metal wire layer 21 on the transparent substrate 10 after removing the remaining photoresist layer 31.
The seed metal layer can be made of copper metal or its alloy.
FIGS. 3A-3E illustrate cross-sectional views of a process for forming a conductive line of a seed metal layer by exposure, development and photoresist stripping. Fig. 3A illustrates a photoresist layer 30 formed on a transparent substrate 10, wherein the photoresist layer 30 may be a positive photoresist or a negative photoresist, and the thickness may be 15 μm to 20 μm, and the photoresist layer may be formed by spin coating or spraying. FIG. 3B illustrates a photo-mask 70 used to expose the photoresist layer 30 with UV light 80; the mask 70 is a mask with a patterned conductive line. In FIG. 3C, the photoresist layer 30 is developed, and the remaining photoresist layer 31 is lifted off the seed metal layer 20, i.e., the remaining photoresist layer 31 is a lift-off photoresist layer. FIG. 3D shows a seed metal layer 20 formed on the transparent substrate 10 with the photoresist layer 31; it can be seen that a portion of the seed metal layer 20 of this step is formed on the photoresist layer 31; the seed metal layer 20 may be formed by evaporation or spraying. Fig. 3E shows that after the residual photoresist layer 31 is removed, the portion of the seed metal layer 20 on the photoresist layer 31 is also removed, leaving the seed metal wiring layer 21 on the transparent substrate 10.
Step S102: a photoresist layer is formed on the seed metal line layer. As shown in fig. 2G and fig. 3F, the photoresist layer 40 is fully spread and covers the seed metal line layer 21. The thickness of the photoresist layer 40 can be determined according to the thickness of the metal wiring layer to be formed. For example, in order to form a metal wiring layer of 50-100 μm, the thickness of the photoresist layer 40 is not less than 50-100 μm.
Step S103: the seed metal wire layer is used as a mask layer, and a multi-angle exposure device is used to perform a scattering exposure on the photoresist layer through the seed metal wire layer. As shown in fig. 2H and fig. 3G, due to the multi-angle exposure apparatus 90, the ultraviolet light 91 in the original scattering state enters the transparent substrate 10 and becomes the scattered ultraviolet light 92, and passes through the edge of the seed metal wire layer 21, so that the problem of diffraction caused by the slit of the original collimated ultraviolet light 80 can be solved, and the desired exposure result of the present invention can be produced. Therefore, the resolution of the metal wires applied in the present invention is relatively high, the gaps between the wires are very small, the line width is between 1 μm and 300 μm, and the pitch may be as small as 10 μm or even smaller. Such a small gap between the conductive lines will cause diffraction of light.
Wherein the multi-angle exposure apparatus is selected from: an exposure device which uses a plurality of exposure light sources to arrange the emission angles of n degrees to-n degrees, or a light guide lens to guide the exposure light sources into the exposure device which emits the emission angles of n degrees to-n degrees perpendicular to the transparent substrate; wherein n is an arbitrary number between 1 and 45. Wherein, the emission angle is centered on the original emission direction, and the arrangement of the exposure light sources is such that besides the original direction, there are exposure light sources with left and right sequentially inclined angles smaller than or equal to the emission angle, as shown in fig. 2H and 3G; the same applies to the light guide lens.
Step S104: removing the unexposed photoresist layer to expose the seed metal line layer. As shown in fig. 2I and fig. 3G, after the seed metal wire layer 21 is developed, the photoresist layer 41 (negative photoresist) thereon is not exposed, and can be removed by a developer to leave an exposed photoresist layer 42; the shape of the space above the seed metal wire layer 21 is the shape of the metal wire layer to be electroplated according to the present invention.
Step S105: electroplating the seed metal conductor layer to a predetermined thickness. As shown in fig. 2J and 3H, since the space above the seed metal wire layer 21 is limited by the exposed photoresist layer 42, electroplating the seed metal wire layer 21 can produce the metal wire layer 29 desired in the present invention. Wherein, the electroplated metal can be the same as or different from the seed metal wire layer. Preferably, the metal is the same as that of the seed metal wiring layer.
Step S106: removing the residual photoresist layer. As shown in fig. 2K and fig. 3I, the remaining exposed photoresist layer 42 is removed, thereby completing the metal wiring layer 29 of the present invention. Therefore, the electroplating process does not need to carry out an etching process, so that the problem of uneven impedance caused by damage to the surface of the electroplated metal due to over etching is solved.
Wherein, the aspect ratio of the metal wire layer is between 1:1 and 1:10, the line width is between 3 microns and 15 microns, and the thickness is between 10 microns and 100 microns, or between 3 microns and 15 microns, or between 3 microns and 30 microns, or between 5 microns and 15 microns, or between 5 microns and 30 microns.
The transparent substrate 11 may be a PET substrate (Polyethylene terephthalate, PET for short), a COP substrate, a PC substrate, a CPI substrate, a glass substrate, a Polyvinyl Butyral Resin (PVB) substrate, or the like. The light transmittance of the transparent substrate 10 in the visible light band is greater than 80%.
The negative resist used in the resist of the present invention can be a high resolution negative resist. The material of the photoresist layer mainly comprises a high molecular Resin (Resin), a Photo initiator (Photo initiator), a Monomer (Monomer), a Solvent (Solvent) and Additives (Additives).
Wherein in the material of the photoresist layer, the function of the polymer Resin (Resin) is adhesiveness, developability, pigment dispersibility, fluidity, heat resistance, chemical resistance, resolving power; the function of a Photo initiator (Photo initiator) is photosensitive property and resolving power; the Monomer functions in adhesion, developability, and resolution; the function of the Solvent (Solvent) is viscosity and coating properties; the Additives (Additives) function in terms of coatability, leveling and foamability.
The polymer Resin (Resin) may be a polymer or copolymer containing a carboxylic acid group (-COOH), such as Acrylic Resin, acryl-Epoxy Resin, acryl-Melamine Resin, acryl-Styrene Resin, phenol-novolac Resin, or any mixture thereof, but not limited thereto. The weight percentage of the resin in the photoresist may range from 0.1% to 99%.
The Monomer can be divided into water-insoluble and water-soluble monomers, wherein the water-insoluble Monomer can be penterythritol triacrylate, trimethyletherpropane trimethacrylate, tri, di-ethanol isocyanate triacrylate, di, trimethylolpropane tetraacrylate, diisopentaerythritol pentaacrylate, and tetraacetate tetraol; hexa-acetic acid dihexyl tetrol, hexa-acetic acid diisoamyl tetrol, or polyfunctional monomers, dendritic/clustered acrylate oligomers, clustered polyether acrylate, and urethane. The water-soluble monomer can be polyoxyethylene (EO) base and Polyoxypropylene (PO) monomer; for example, the following are: di- (di-oxyethylene-oxy-ethylene) vinyl acrylate, pentadecyloxyethylene trimethylolpropane triacrylate, triacontoxyethylene di, di-p-phenomenol diacrylate, thirty oxyethylene di, di-p-phenomenol dimethacrylates, eicosoxyethylene trimethylolpropane triacrylate, pentadecoxyethylene trimethylolpropane triacrylate, pentadecyloxyethylene monomethylene methacrylate monomethacrylate, bis-hundred-oxyethylene diacrylate, tetra-hundred-oxyethylene-diacrylate-unitary acrylate, tetra-hundred-oxyethylene dimethacrylate, hexa-hundred-oxyethylene diacrylate, hexa-hundred-oxyethylene dimethacrylate, polyoxypropylene monomethacrylate. It is of course also possible to add two or more monomers (monomers) to mix them to form the comonomer (co-monomer). The weight percentage of monomer or co-monomer in the photoresist may range from 0.1% to 99%.
The photoinitiator (Photo initiator) may be selected from any mixture of the above photoinitiators, such as an acetophenone-based compound (acetophenone), a Benzophenone-based compound (Benzophenone), a bisimidazole-based compound (bis _ imidazole), a Benzoin-based compound (Benzoin), a Benzil-based compound (Benzil), an α -aminoketone-based compound (α -aminoketone), an acylphosphine oxide-based compound (acylphosphine oxide), or a benzoylformate-based compound, but is not limited thereto. The weight percentage of the photoinitiator in the photoresist may range from 0.1 to 10%.
The Solvent (Solvent) may be ethylene glycol propyl ether (ethylene glycol monopropylether), diethylene glycol dimethyl ether (di-ethylene glycol dimethyl ether), tetrahydrofuran, ethylene glycol methyl ether (ethylene glycol monomethylether), ethylene glycol ethyl ether (ethylene glycol monoethylether), diethylene glycol monomethyl ether (di-ethylene glycol mono-methyl ether), diethylene glycol monoethyl ether (di-ethylene glycol mono-ethyl ether), diethylene glycol monobutyl ether (di-ethylene glycol mono-butyl ether), propylene glycol methyl ether acetate (propylene glycol mono-methyl ether acetate), propylene glycol ethyl ether acetate (propylene glycol mono-ethyl ether acetate), propylene glycol propyl ether (propylene glycol propyl ether acetate (propylene glycol ether acetate), propylene glycol propyl ether (propionic acid acetate), or mixtures thereof, but not limited to these solvents. The solvent may be present in the photoresist in an amount ranging from 0.1% to 99% by weight.
The additive is typically a pigment dispersant, which is an essential ingredient for a pigment-containing resist, typically a nonionic surfactant, such as: solsperse39000, Solsperse21000, the weight percent of this dispersant in the photoresist can range from 0.1 to 5%.
Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes and modifications can be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing a plated metal wire, comprising:
forming a seed metal wire layer on a transparent substrate, wherein the wire of the seed metal wire layer is manufactured;
forming a photoresist layer on the seed metal wire layer;
using the seed metal wire layer as a mask layer, and performing scattering type exposure on the photoresist layer through the seed metal wire layer by a multi-angle exposure device;
removing the unexposed photoresist layer to expose the seed metal wire layer;
electroplating the seed metal wire layer to a predetermined thickness to form a metal wire layer; and
removing the residual photoresist layer.
2. The method of claim 1, wherein the multi-angle exposure apparatus is selected from the group consisting of: an exposure device which uses a plurality of exposure light sources to arrange in an emission angle of n degrees to-n degrees, or an exposure device which uses a light guide lens to enable the exposure light sources to emit the emission angle of n degrees to-n degrees with the vertical line of the transparent substrate; wherein n is an arbitrary number between 1 and 45.
3. The method of claim 1, wherein the seed metal layer is made of a material selected from copper and alloys thereof.
4. The method of claim 1, wherein the metal line layer has an aspect ratio of 1:1 to 1:10 and a line width of 3 μm to 15 μm.
5. The method of claim 1, wherein the thickness is between about 10 microns and about 100 microns.
6. The method of claim 1, wherein the thickness is between 3 microns and 15 microns.
7. The method of claim 1, wherein the thickness is between 3 microns and 30 microns.
8. The method of claim 1, wherein the thickness is between 5 microns and 15 microns.
9. The method of claim 1, wherein the thickness is between 5 microns and 30 microns.
10. A multi-angle exposure apparatus characterized in that:
arranging a plurality of exposure light sources into an emission angle of n degrees to-n degrees, or using a light guide lens to enable the exposure light sources to emit the emission angle of n degrees to-n degrees with the vertical line of the transparent substrate; wherein n is an arbitrary number between 1 and 45.
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| CN201910922832.1A CN112584624A (en) | 2019-09-27 | 2019-09-27 | Multi-angle exposure equipment and manufacturing method of electroplated metal wire |
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| TW200917333A (en) * | 2007-10-11 | 2009-04-16 | Univ Nat Cheng Kung | Manufacturing method of micro-structured stamping mold |
| TW201737272A (en) * | 2016-04-08 | 2017-10-16 | 許銘案 | Charging coil and the manufacturing method for making the same |
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| TW200739172A (en) * | 2006-04-07 | 2007-10-16 | Quanta Display Inc | Manufacturing method for a bottom substrate of a liquid crystal display device |
| KR100773588B1 (en) * | 2006-06-29 | 2007-11-05 | 한국과학기술원 | Method of forming polymer pattern and metal film pattern, metal pattern, microshutter, microlens array stamper, plastic mold using thereof |
| CN101281365A (en) * | 2007-04-04 | 2008-10-08 | 韩国科学技术院 | Material pattern, and mold, metal thin-film pattern, metal pattern using thereof, and methods of forming the same |
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Effective date of registration: 20220803 Address after: Unit 706, happy news building, 1 champley street, Hong Kong, China Applicant after: Hengxu Electronic Materials International Co.,Ltd. Address before: No. 442-1 Zhonghua Road, head town, Miaoli County, Taiwan, China Applicant before: Hengyu Electronic Materials Co.,Ltd. |
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Application publication date: 20210330 |