CN112582493B - Four-quadrant illumination sensor and preparation method thereof - Google Patents

Four-quadrant illumination sensor and preparation method thereof Download PDF

Info

Publication number
CN112582493B
CN112582493B CN202011464021.0A CN202011464021A CN112582493B CN 112582493 B CN112582493 B CN 112582493B CN 202011464021 A CN202011464021 A CN 202011464021A CN 112582493 B CN112582493 B CN 112582493B
Authority
CN
China
Prior art keywords
solar cell
substrate
bottom electrode
quadrant
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011464021.0A
Other languages
Chinese (zh)
Other versions
CN112582493A (en
Inventor
刘生忠
曹越先
王辉
王立坤
王开
杜敏永
姜箫
焦玉骁
段连杰
孙友名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dalian Institute of Chemical Physics of CAS
Original Assignee
Dalian Institute of Chemical Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalian Institute of Chemical Physics of CAS filed Critical Dalian Institute of Chemical Physics of CAS
Priority to CN202011464021.0A priority Critical patent/CN112582493B/en
Publication of CN112582493A publication Critical patent/CN112582493A/en
Application granted granted Critical
Publication of CN112582493B publication Critical patent/CN112582493B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142Energy conversion devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1446Devices controlled by radiation in a repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a four-quadrant illumination sensor and a preparation method thereof, wherein the four-quadrant illumination sensor comprises a substrate, a diaphragm arranged on one surface of the substrate, a top electrode arranged on the other surface of the substrate, a solar cell layer, a bottom electrode, an insulating layer, an electrode lead and a packaging material layer; when the diaphragm is prepared, covering an adhesive material on one side of the substrate, preparing a positioning line on the substrate by laser scribing, removing the adhesive material outside the positioning line, comprehensively preparing a diaphragm coating on the position of the residual adhesive material and the substrate, and removing the adhesive material inside the positioning line; and fixing an insulating layer on the bottom electrode, and respectively connecting the electrode lead with the bottom electrode and the top electrode to be used as external top and bottom electrodes. According to the invention, the sizes of all parts of the four quadrants of the solar cell are more accurate, the solar cell is effectively prevented from being polluted by the diaphragm and damaged by laser, the environmental tolerance of the four-quadrant illumination sensor is improved, and the service life of the four-quadrant illumination sensor is effectively prolonged by the electrode preparation mode.

Description

Four-quadrant illumination sensor and preparation method thereof
Technical Field
The invention relates to the technical field of research and development of illumination sensors, in particular to a four-quadrant illumination sensor and a preparation method thereof.
Background
In recent years, with the deep development of aerospace and adjacent space vehicle technologies, the demand for a four-quadrant illumination sensor is gradually increased. Meanwhile, due to the characteristic that the incident angle of sunlight can be accurately judged, the method has great development potential in the fields of photovoltaic power generation, special environment positioning and the like.
The original four-quadrant illumination sensor technology has the disadvantages of more complex preparation method and more existing problems, namely:
1. the yield is low, the bottom electrode is directly prepared into an external connection structure in the prior art, and the device is easily damaged due to the vertical short circuit in the solar cell;
2. the prior art has complex preparation process and is difficult to realize, and the prepared four-quadrant device has lower impedance and lower accuracy.
Disclosure of Invention
In view of the above-mentioned technical problems, a four-quadrant photo sensor and a method for manufacturing the same are provided to meet the requirements.
In order to achieve the purpose, the technical means adopted by the invention are as follows:
a four-quadrant illumination sensor, comprising: the solar cell comprises a substrate, a diaphragm arranged on one surface of the substrate, and a top electrode, a solar cell layer, a bottom electrode, an insulating layer, an electrode lead and a packaging material layer which are sequentially arranged on the other surface of the substrate; when the solar cell works, light enters from the diaphragm surface, passes through the substrate and the top electrode, is absorbed by the solar cell layer to generate a photoelectric effect, and is finally led out by the electrode lead wire connected with the bottom electrode and the electrode lead wire connected with the top electrode.
Further, the diaphragm comprises a diaphragm shading area and a diaphragm light-transmitting window, and the material of the diaphragm shading area comprises carbon black, acrylic resin and black ink.
Further, the substrate comprises a combination of one or more of glass, quartz glass, plexiglass, polyethylene terephthalate, polyethylene naphthalate, and polyimide.
Further, the top electrode covers the surface of the substrate completely, and comprises one or more of ITO, FTO, AZO, BZO, ZnO and nano silver wire.
Further, the solar cell layer is divided into a solar cell working area and a solar cell isolation area through a four-quadrant dividing line, and the solar cell working area and the solar cell isolation area completely cover the surface of the top electrode, wherein the solar cell layer comprises one or more combinations of silicon-based thin film solar cells, CIGS solar cells, cadmium telluride solar cells, gallium arsenide solar cells and perovskite solar cells.
Further, the solar cell layer also comprises two top electrode connecting channels.
Further, the bottom electrode is divided into a bottom electrode working area and a bottom electrode isolation area through a four-quadrant dividing line, the bottom electrode working area and the bottom electrode isolation area are covered on the surface of the solar cell layer in an all-round mode, and the bottom electrode comprises one or more combinations of gold, platinum, silver, copper and aluminum.
Further, the insulating layer partially covers the surface of the bottom electrode, and is provided with an electrode lead for isolating the electrode lead from contacting with other parts except the bottom electrode, wherein the insulating layer comprises Al2O3、SiO2Or one or a combination of MgO.
Further, the electrode leads include a bottom electrode lead and a top electrode lead, and are disposed on the insulating layer, wherein,
one end of the bottom electrode lead is connected with the bottom electrode working area, and the other end of the bottom electrode lead extends out of the substrate;
one end of the top electrode lead is connected with the bottom electrode isolation region, and the other end of the top electrode lead extends out of the substrate;
the bottom electrode lead and the top electrode lead are made of one or a combination of copper foil, aluminum foil, silver-plated copper foil and silver-plated aluminum foil.
Further, the packaging material layer covers the surface of the four-quadrant photo sensor completely, and the material of the packaging material layer comprises one or more combinations of ethylene-vinyl acetate copolymer, ultraviolet curing glue, polyurethane glue, polyisobutylene glue and butyl glue, so that the device of the four-quadrant photo sensor is protected, and meanwhile, the connection of a circuit board is facilitated.
The invention also provides a preparation method of the four-quadrant illumination sensor, which comprises the following steps:
s1, preparing a top electrode on a substrate in a mode of one or more of magnetron sputtering, electron beam evaporation, atomic layer deposition, thermal evaporation, pulsed laser deposition and screen printing, wherein the prepared top electrode completely covers the substrate;
s2, preparing a solar cell layer on the prepared top electrode, wherein the prepared solar cell layer completely covers the top electrode;
s3, after the solar cell layer is prepared, carrying out laser scribing 1, and preparing two top electrode connecting channels on two sides of the substrate;
s4, preparing a bottom electrode on the solar cell layer subjected to laser scribing 1 in a mode of combining one or more of magnetron sputtering, electron beam evaporation, thermal evaporation and screen printing;
s5, after the bottom electrode is prepared, carrying out laser scribing 2, carrying out four-quadrant segmentation in a shape like a Chinese character tian in the center of the substrate by using laser scribing, segmenting the solar cell layer into a solar cell working area and a solar cell isolation area, and segmenting the bottom electrode into a bottom electrode working area and a bottom electrode isolation area;
s6, preparing an insulating layer on the bottom electrode subjected to laser scribing 2 in a mode of one or combination of magnetron sputtering, chemical vapor deposition, electron beam evaporation, spin coating, blade coating, spraying or thermal evaporation;
s7, preparing a bottom electrode lead and a top electrode lead on the prepared insulating layer, wherein one end of the bottom electrode lead is connected with the bottom electrode working area, and the other end of the bottom electrode lead extends out of the substrate; one end of the top electrode lead is connected with the bottom electrode isolation region, and the other end of the top electrode lead extends out of the substrate;
s8, preparing a packaging material layer in a full-size substrate by adopting one or more combination modes of hot lamination, blade coating, spraying and spin coating after preparing a bottom electrode lead and a top electrode lead;
s9, using laser scribing 3, a diaphragm was prepared.
Further, in step S3, the laser scribing 1 removes only the solar cell layer.
Further, in the step S5, the laser scribing 2 removes only the solar cell layer and the bottom electrode.
Further, in step S9, the preparing the diaphragm specifically includes:
s91, dividing the solar cell into four-quadrant structures by using a laser scribing 2, and covering one side of a diaphragm prepared for preparing the substrate with a layer of 0.1-5mm of adhesive material without moving the substrate;
s92, preparing a positioning line on the adhesive material by using laser scribing 3, wherein the position and the size of the positioning line are the same as those of a diaphragm light-transmitting window, and the width of the positioning line is 0.01-0.05 mm;
s93, removing the adhesive material outside the positioning line;
s94, preparing a diaphragm coating with the thickness of 0.1-2mm according to the whole area of the substrate in one or more combined modes of spin coating, blade coating and spray coating at the position of the residual adhesive material and on the substrate;
and S95, removing the adhesive material inside the positioning line after the diaphragm coating is fixed.
Further, the sticking material comprises one or more of BOPP adhesive tape, cloth-based adhesive tape, kraft paper adhesive tape, masking tape, fiber adhesive tape, PVC adhesive tape, PE foam adhesive tape and PI adhesive tape.
Compared with the prior art, the invention has the following advantages:
1. the four-quadrant illumination sensor provided by the invention processes and prepares the device by more reasonably utilizing laser scribing, so that the sizes of all parts of the four quadrants of the solar cell are more accurate, and the accuracy of the device is improved.
2. According to the preparation method of the four-quadrant illumination sensor, the diaphragm is prepared in the last step, so that performance attenuation caused by pollution of a diaphragm preparation process to a solar cell is effectively avoided.
3. According to the preparation method of the four-quadrant illumination sensor, provided by the invention, the diaphragm preparation process is improved, and the damage of laser cutting to the solar cell is completely avoided while the accuracy of the device is not influenced.
4. The preparation method of the four-quadrant illumination sensor provided by the invention is more stable, the environmental tolerance of the device is effectively improved, and the service life of the device can be effectively prolonged when repeated measurement is carried out.
Based on the reasons, the invention can be widely popularized in the fields of research and development of the illumination sensor and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a cross-section 1 of the structure of the present invention;
FIG. 2 is a schematic cross-sectional view of the structure of the present invention 2;
FIG. 3 is a schematic cross-sectional view of the structure of the present invention after laser scribing 1;
FIG. 4 is a schematic top view of the structure of the present invention after laser scribing 1;
FIG. 5 is a schematic cross-sectional view of the structure of the present invention after laser scribing 2;
FIG. 6 is a schematic top view of the structure after laser scribing 2 according to the present invention;
FIG. 7 is a schematic structural cross-sectional view of a diaphragm preparation step S91 according to the present invention;
FIG. 8 is a schematic sectional view and a schematic plan view of a structure of a diaphragm preparation step S92 according to the present invention;
FIG. 9 is a schematic sectional view and a schematic plan view of a structure of a diaphragm preparation step S93 according to the present invention;
FIG. 10 is a schematic sectional view and a schematic plan view of a structure of a diaphragm preparation step S94 according to the present invention;
FIG. 11 is a schematic sectional view and a schematic plan view of a structure of a diaphragm preparation step S95 according to the present invention;
fig. 12 is a graph of voltage versus current density for a final device of the present invention.
In the figure: 1. a substrate; 2. a top electrode; 3. a solar cell layer; 3a, a solar cell working area; 3b, a solar cell isolation region; 4. a bottom electrode; 4a, a bottom electrode working area; 4b, a bottom electrode isolation region; 5. an insulating layer; 6. an electrode lead; 6a, a bottom electrode lead; 6b, a top electrode lead; 7. a layer of encapsulation material; 8. a diaphragm; 8a, a diaphragm shading area; 8b is a diaphragm light-transmitting window; 9. pasting a material; 10. a top electrode connecting channel; 11. a four-quadrant parting line; 12. and (6) positioning the wire.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present invention, it is to be understood that the directions or positional relationships indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the directions or positional relationships shown in the drawings for the convenience of description and simplicity of description, and that these directional terms, unless otherwise specified, do not indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … … surface," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
Example 1
As shown in fig. 1 and 2, the present invention provides a four-quadrant illumination sensor, including: the solar cell comprises a substrate 1, a diaphragm 8 arranged on one surface of the substrate 1, and a top electrode 2, a solar cell layer 3, a bottom electrode 4, an insulating layer 5, an electrode lead 6 and a packaging material layer 7 which are arranged on the other surface of the substrate 1 in sequence; when the solar cell works, light enters from the diaphragm surface, passes through the substrate 1 and the top electrode 2, is absorbed by the solar cell layer 3 to generate a photoelectric effect, and is finally led out by the electrode lead wire connected with the bottom electrode 4 and the electrode lead wire connected with the top electrode 2.
In specific implementation, as a preferred embodiment of the present invention, the diaphragm 8 includes a diaphragm light-shielding region 8a and a diaphragm light-transmitting window 8b, and the material of the diaphragm light-shielding region 8a includes carbon black, acrylic resin, and black ink.
In particular, as a preferred embodiment of the present invention, the substrate 1 comprises a combination of one or more of glass, quartz glass, plexiglass, polyethylene terephthalate, polyethylene naphthalate, and polyimide.
In specific implementation, as a preferred embodiment of the present invention, the top electrode 2 covers the surface of the substrate 1 entirely, and includes one or more combinations of ITO, FTO, AZO, BZO, ZnO, and silver nanowires.
In specific implementation, as a preferred embodiment of the present invention, the solar cell layer 3 is divided into a solar cell working region 3a and a solar cell isolation region 3b by a four-quadrant dividing line 11, which covers the surface of the top electrode 2 entirely, and includes one or more combinations of silicon-based thin film solar cells, CIGS solar cells, cadmium telluride solar cells, gallium arsenide solar cells, and perovskite solar cells. The solar cell layer 3 further comprises two top electrode connection channels 10.
In specific implementation, as a preferred embodiment of the present invention, the bottom electrode 4 is divided into a bottom electrode working region 4a and a bottom electrode isolation region 4b by a four-quadrant division line 11, and the whole surface of the bottom electrode working region and the whole surface of the bottom electrode isolation region covers the surface of the solar cell layer 3, and the bottom electrode isolation region includes one or more combinations of gold, platinum, silver, copper and aluminum.
In specific implementation, as a preferred embodiment of the present invention, the insulating layer 5 partially covers the surface of the bottom electrode 4, and is provided with the electrode lead 6 for isolating the electrode lead 6 from contacting with other parts except the bottom electrode 4, including Al2O3、SiO2Or one or a combination of MgO.
In specific implementation, as a preferred embodiment of the present invention, the electrode lead 6 includes a bottom electrode lead 6a and a top electrode lead 6b, both of which are disposed on the insulating layer 5, wherein one end of the bottom electrode lead 6a is connected to the bottom electrode working region 4a, and the other end extends out of the substrate 1; one end of the top electrode lead 6b is connected with the bottom electrode isolation region 4b, and the other end extends out of the substrate 1; the bottom electrode lead 6a and the top electrode lead 6b are made of one or a combination of copper foil, aluminum foil, silver-plated copper foil and silver-plated aluminum foil.
In specific implementation, as a preferred embodiment of the present invention, the packaging material layer 7 covers the surface of the four-quadrant photo sensor entirely, and the material thereof includes one or more combinations of ethylene-vinyl acetate copolymer, uv curable adhesive, polyurethane adhesive, polyisobutylene adhesive and butyl adhesive, so as to protect the devices of the four-quadrant photo sensor and facilitate connection of the circuit board.
Example 2
On the basis of embodiment 1, the invention also provides a preparation method of the four-quadrant illumination sensor, which comprises the following steps:
s1, preparing an ITO film with the thickness of 200nm on the substrate 1 in a magnetron sputtering mode to serve as a top electrode 2, wherein the prepared top electrode 2 completely covers the substrate 1;
s2, preparing a silicon-based thin film solar cell with the thickness of 800nm as a solar cell layer 3 on the prepared top electrode 2 in a very high frequency plasma vapor deposition mode, wherein the prepared solar cell layer 3 completely covers the top electrode 2;
s3, as shown in fig. 3 and 4, after the solar cell layer 3 is prepared, performing laser scribing 1, and preparing two top electrode connecting channels 10 on two sides of the substrate 1; its laser scribing 1 removes only the solar cell layer 3.
S4, preparing a silver film with the thickness of 1000nm on the solar cell layer 3 subjected to laser scribing 1 in a magnetron sputtering mode to serve as a bottom electrode 4;
s5, as shown in fig. 5 and 6, after the bottom electrode 4 is prepared, performing laser scribing 2, performing four-quadrant division in a shape of a Chinese character 'tian' in the center of the substrate 1 by using laser scribing, dividing the solar cell layer 3 into a solar cell working region 3a and a solar cell isolation region 3b, and dividing the bottom electrode 4 into a bottom electrode working region 4a and a bottom electrode isolation region 4 b; the laser scribing 2 thereof removes only the solar cell layer 3 and the bottom electrode 4.
S6, preparing a layer of SiO with the thickness of 50nm on the bottom electrode 4 after the laser scribing 2 by adopting a chemical vapor deposition mode2A thin film as the insulating layer 5;
s7, preparing a bottom electrode lead 6a and a top electrode lead 6b on the prepared insulating layer 5, wherein one end of the bottom electrode lead 6a is connected with the bottom electrode working area 4a, and the other end extends out of the substrate; one end of the top electrode lead 6b is connected with the bottom electrode isolation region 4b, and the other end extends out of the substrate 1; in this embodiment, the bottom electrode lead 6a and the top electrode lead 6b are made of silver-plated aluminum foil;
s8, preparing a layer of ethylene-vinyl acetate copolymer film with the thickness of 1nm in the full size of the substrate 1 in a hot lamination mode after preparing the bottom electrode lead 6a and the top electrode lead 6b, and taking the film as a packaging material layer 7;
s9, using laser scribing 3, diaphragm 8 is prepared.
In specific implementation, as a preferred embodiment of the present invention, in step S9, the preparing the diaphragm 8 specifically includes:
s91, as shown in fig. 7, after the solar cell is divided into four-quadrant structure by using the laser scribing 2, the substrate 1 is not moved, and a layer of PI tape with 2mm is covered on one side of the diaphragm (8) prepared for preparing the substrate 1;
s92, as shown in FIG. 8, preparing a positioning line 12 with the thickness of 0.02mm on the PI adhesive tape by using the laser scribing 3, wherein the position and the size of the positioning line 12 are the same as those of the diaphragm light-transmitting window 8 b;
s93, as shown in FIG. 9, removing the PI adhesive tape outside the positioning wire 12;
s94, as shown in FIG. 10, preparing a layer of diaphragm coating with the thickness of 1mm on the position of the residual PI adhesive tape and the substrate 1 in a spin coating mode according to the whole area of the substrate 1; in this embodiment, the material of the diaphragm coating is black humor;
s95, as shown in fig. 11, after the stop coating is fixed, the PI tape inside the positioning wire 12 is removed.
In specific implementation, as a preferred embodiment of the present invention, the adhesive material (9) includes one or more combinations of BOPP tape, cloth-based tape, kraft paper tape, masking paper tape, fiber tape, PVC tape, PE foam tape, and PI tape. In this embodiment, a PI tape is selected.
As shown in fig. 12, which is a voltage-current density curve diagram of the final device of the present invention, it can be seen that the impedance of the device of the present invention is high (in the range of 0-0.2 v), the four-quadrant curves are almost consistent, the error is small, and the accuracy is high.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (14)

1. A preparation method of a four-quadrant illumination sensor is characterized by comprising the following steps:
s1, preparing a top electrode (2) on the substrate (1) in a mode of one or more of magnetron sputtering, electron beam evaporation, atomic layer deposition, thermal evaporation, pulsed laser deposition and screen printing, wherein the prepared top electrode (2) completely covers the substrate (1);
s2, preparing a solar cell layer (3) on the prepared top electrode (2), wherein the prepared solar cell layer (3) completely covers the top electrode (2);
s3, after the solar cell layer (3) is prepared, carrying out laser scribing 1, and preparing two top electrode connecting channels (10) on two sides of the substrate (1);
s4, preparing a bottom electrode (4) on the solar cell layer (3) subjected to laser scribing 1 in a mode of one or more of magnetron sputtering, electron beam evaporation, thermal evaporation and screen printing;
s5, after the bottom electrode (4) is prepared, carrying out laser scribing 2, carrying out four-quadrant segmentation on the center of the substrate (1) in a shape like a Chinese character 'tian' by using laser scribing, segmenting the solar cell layer (3) into a solar cell working area (3a) and a solar cell isolation area (3b), and segmenting the bottom electrode (4) into a bottom electrode working area (4a) and a bottom electrode isolation area (4 b);
s6, preparing an insulating layer (5) on the bottom electrode (4) subjected to laser scribing 2 by adopting one or a combination of magnetron sputtering, chemical vapor deposition, electron beam evaporation, spin coating, blade coating, spraying or thermal evaporation;
s7, preparing a bottom electrode lead (6a) and a top electrode lead (6b) on the prepared insulating layer (5), wherein one end of the bottom electrode lead (6a) is connected with the bottom electrode working area (4a), and the other end of the bottom electrode lead extends out of the substrate (1); one end of the top electrode lead (6b) is connected with the bottom electrode isolation region (4b), and the other end extends out of the substrate (1);
s8, preparing a packaging material layer (7) in the full size of the substrate (1) by adopting one or more combination modes of hot lamination, blade coating, spray coating and spin coating after preparing the bottom electrode lead (6a) and the top electrode lead (6 b);
s9, preparing a diaphragm (8) by using laser scribing 3;
a four-quadrant illumination sensor, comprising: the solar cell comprises a substrate (1), a diaphragm (8) arranged on one surface of the substrate (1), and a top electrode (2), a solar cell layer (3), a bottom electrode (4), an insulating layer (5), an electrode lead (6) and a packaging material layer (7) which are sequentially arranged on the other surface of the substrate (1); when the solar cell module works, light enters from the diaphragm surface, passes through the substrate (1) and the top electrode (2), is absorbed by the solar cell layer (3) to generate a photoelectric effect, and is finally led out by the electrode lead wire connected with the bottom electrode (4) and the electrode lead wire connected with the top electrode (2).
2. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein in step S3, the laser scribing 1 thereof removes only the solar cell layer (3).
3. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein in step S5, the laser scribing 2 thereof only removes the solar cell layer (3) and the bottom electrode (4).
4. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein in step S9, the manufacturing of the aperture (8) specifically comprises:
s91, dividing the solar cell into four-quadrant structures by using the laser scribing 2, and covering one side of a diaphragm (8) to be prepared on the substrate (1) with a layer of 0.1-5mm of adhesive material (9) without moving the substrate (1);
s92, preparing a positioning line (12) on the adhesive material (9) by using laser scribing 3, wherein the position and the size of the positioning line (12) are the same as those of the diaphragm light-transmitting window (8b), and the width of the positioning line is 0.01-0.05 mm;
s93, removing the adhesive material (9) outside the positioning line (12);
s94, preparing a diaphragm coating with the thickness of 0.1-2mm according to the whole area of the substrate (1) in one or more combination modes of spin coating, blade coating and spray coating at the position of the residual adhesive material (9) and the substrate (1);
s95, after the diaphragm coating is fixed, removing the adhesive material (9) in the positioning line (12).
5. Method for manufacturing a four-quadrant photo sensor according to claim 4, wherein the adhesive material (9) comprises one or more combinations of BOPP tape, cloth-based tape, kraft paper tape, crepe paper tape, fiber tape, PVC tape, PE foam tape, and PI tape.
6. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein the diaphragm (8) includes a diaphragm light-shielding region (8a) and a diaphragm light-transmitting window (8b), and a material of the diaphragm light-shielding region (8a) includes carbon black, acrylic resin, and black ink.
7. The method of manufacturing a four-quadrant photo sensor according to claim 1, characterized in that the substrate (1) comprises one or a combination of quartz glass, plexiglass, polyethylene terephthalate, polyethylene naphthalate and polyimide.
8. Method for manufacturing a four-quadrant photo sensor according to claim 1, characterized in that the top electrode (2) covers the surface of the substrate (1) in its entirety, which comprises a combination of one or more of ITO, FTO, AZO, BZO, ZnO and nano silver wires.
9. The method for manufacturing a four-quadrant photo-sensor according to claim 1, wherein the solar cell layer (3) is divided into a solar cell working region (3a) and a solar cell isolation region (3b) by a four-quadrant dividing line (11), which covers the surface of the top electrode (2) completely, and comprises one or more of silicon-based thin film solar cell, CIGS solar cell, cadmium telluride solar cell, gallium arsenide solar cell and perovskite solar cell.
10. Method for manufacturing a four-quadrant photo sensor according to claim 9, characterized in that the solar cell layer (3) further comprises two top electrode connecting channels (10).
11. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein the bottom electrode (4) is divided into a bottom electrode working region (4a) and a bottom electrode isolation region (4b) by a four-quadrant dividing line (11), which covers the surface of the solar cell layer (3) completely, and comprises one or more combinations of gold, platinum, silver, copper and aluminum.
12. Method for manufacturing a four-quadrant photo sensor according to claim 1, wherein the insulating layer (5) partially covers the surface of the bottom electrode (4), and electrode leads (6) are disposed thereon for isolating the electrode leads (6) from contacting other parts except the bottom electrode (4), including Al2O3、SiO2Or one or a combination of MgO.
13. Method for manufacturing a four-quadrant photo sensor according to claim 1, wherein the electrode leads (6) comprise a bottom electrode lead (6a) and a top electrode lead (6b) and are both provided on the insulating layer (5), wherein,
one end of the bottom electrode lead (6a) is connected with the bottom electrode working area (4a), and the other end extends out of the substrate (1);
one end of the top electrode lead (6b) is connected with the bottom electrode isolation region (4b), and the other end of the top electrode lead extends out of the substrate (1);
the bottom electrode lead (6a) and the top electrode lead (6b) are made of one or a combination of copper foil, aluminum foil, silver-plated copper foil and silver-plated aluminum foil.
14. The method for manufacturing a four-quadrant photo sensor according to claim 1, wherein the encapsulating material layer (7) covers the surface of the four-quadrant photo sensor entirely, and the material thereof comprises one or more combinations of ethylene-vinyl acetate copolymer, uv curable glue, polyurethane glue, polyisobutylene glue and butyl glue, which are used for protecting the devices of the four-quadrant photo sensor and facilitating the connection of a circuit board.
CN202011464021.0A 2020-12-11 2020-12-11 Four-quadrant illumination sensor and preparation method thereof Active CN112582493B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011464021.0A CN112582493B (en) 2020-12-11 2020-12-11 Four-quadrant illumination sensor and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011464021.0A CN112582493B (en) 2020-12-11 2020-12-11 Four-quadrant illumination sensor and preparation method thereof

Publications (2)

Publication Number Publication Date
CN112582493A CN112582493A (en) 2021-03-30
CN112582493B true CN112582493B (en) 2022-05-10

Family

ID=75132299

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011464021.0A Active CN112582493B (en) 2020-12-11 2020-12-11 Four-quadrant illumination sensor and preparation method thereof

Country Status (1)

Country Link
CN (1) CN112582493B (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8450141B2 (en) * 2009-06-17 2013-05-28 University Of Delaware Processes for fabricating all-back-contact heterojunction photovoltaic cells
CN104538468B (en) * 2015-01-21 2017-07-04 李毅 Silicon-based film solar cells and its manufacture method
CN109427923B (en) * 2017-08-25 2020-06-16 中国科学院大连化学物理研究所 Semiconductor thin film four-quadrant illumination sensor and preparation method thereof
CN108183144B (en) * 2017-12-27 2020-10-16 四川大学 Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell

Also Published As

Publication number Publication date
CN112582493A (en) 2021-03-30

Similar Documents

Publication Publication Date Title
US20180175234A1 (en) Array Of Monolithically Integrated Thin Film Photovoltaic Cells And Associated Methods
EP3049905B1 (en) Silver nanostructure-based optical stacks and touch sensors with uv protection
US20120260964A1 (en) Solar Cell Module and Photovoltaic Power Generator Using the Same
CN104134870B (en) A kind of Graphene microstrip antenna and preparation method thereof
CN109314152B (en) Solar cell, method for manufacturing same, and solar cell module
CN105720197A (en) Self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and preparation method therefor
CN108565303A (en) Thinfilm solar cell assembly
US11696457B2 (en) Solar cell lamination
US10756225B2 (en) Method for manufacturing a photovoltaic module and photovoltaic module thus obtained
CN112582493B (en) Four-quadrant illumination sensor and preparation method thereof
WO2016031293A1 (en) Organic thin-film solar cell and method for manufacturing same, and electronic device
JP2005191125A (en) Connection tab for connecting solar battery element and solar battery module, and method of manufacturing solar battery module
CN111247643B (en) Photoelectric conversion module and method for manufacturing photoelectric conversion module
US11581502B2 (en) Method of making a current collecting grid for solar cells
US20220285641A1 (en) Method for electrically conductively contacting an optoelectronic component having at least one protective layer and optoelectronic component having a contacting of this type
CN112582551A (en) Electrode structure for accurately measuring stability of flexible solar cell and preparation method thereof
WO2010029939A1 (en) Method for manufacturing solar cell module
JP2013527622A (en) Solar cell module and manufacturing method therefor
CN108172649B (en) Photovoltaic standard battery structure and manufacturing method thereof
KR101120100B1 (en) Thin film silicon solar cell module and Method for manufacturing thereof, Method for connecting the module
CN114175278A (en) Wafer solar cell, solar module and method for producing a wafer solar cell
TWI532205B (en) A Method for Fabricating Crystalline Silicon Solar Cell Having Local Rear Contacts and Passivation Layer and the Device
CN108183144A (en) A kind of Laser scribing techniques for improving cadmium telluride film solar cells test accuracy
CN112789728B (en) Solar cell lamination
AU2022246391A1 (en) A solar module and a method of fabricating a solar module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20210330

Assignee: CHINA NATIONAL NUCLEAR POWER Co.,Ltd.

Assignor: DALIAN INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES

Contract record no.: X2023210000071

Denomination of invention: A four quadrant light sensor and its preparation method

Granted publication date: 20220510

License type: Exclusive License

Record date: 20230808

EE01 Entry into force of recordation of patent licensing contract