CN112563197B - 一种主动开关及其制作方法和显示面板 - Google Patents
一种主动开关及其制作方法和显示面板 Download PDFInfo
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1259—Multistep manufacturing methods
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- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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Abstract
本申请公开了一种主动开关及其制作方法和显示面板,所述主动开关的制作方法包括步骤:在基板上形成缓冲薄膜;在所述缓冲薄膜上形成不连续的第一多晶硅岛状薄膜;在所述第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜;在所述第二多晶硅薄膜上依次形成栅极绝缘薄膜、栅极和层间绝缘薄膜;在所述层间绝缘薄膜上形成源极和漏极,所述源极和漏极分别贯穿所述层间绝缘薄膜和栅极绝缘薄膜,分别连接到所述第二多晶硅薄膜的两端。本申请通过在第二多晶硅薄膜下方增设第一多晶硅岛状薄膜,结合第一多晶硅岛状薄膜和激光脉冲两者对第二多晶硅薄膜进行结晶,提高了结晶效率。
Description
技术领域
本申请涉及显示技术领域,尤其涉及一种主动开关及其制作方法和显示面板。
背景技术
薄膜晶体管液晶显示器(Thin film transistor liquid crystal display,TFT-LCD)广泛应用于电视机、笔记本电脑、显示器、手机显示屏等各个方面。TFT-LCD具有电压低、功耗小、重量轻、厚度薄、适于大规模集成电路直接驱动、易于实现全彩色显示的特性,在平面显示技术中占据了主导地位。TFT-LCD发展源自于TFT器件和材料的研究开发,TFT的半导体材料可以是硒化镉(CdSe)、碲(Te)、非晶硅(a-Si)、多晶硅(p-Si)等,非晶硅TFT的应用最为普遍,但由于非晶硅的电子迁移率低于1cm2/V.s,制约着TFT-LCD往更高精细度、更轻薄、更省电的方向发展。而采用工艺温度低于600℃的低温多晶硅(Low Temperature p-Si,LTPS)技术,使TFT的电子迁移率可以达到300cm2/V.s,极大地提高了TFT的性能。LTPS技术采用的制备方法基本上是先用化学气相沉积(Chemical Vapour Deposition,CVD)生成a-Si薄膜,然后通过准分子激光晶化法(Excimer Laser Crystallization,ELC)、固体晶化法(Solid Phase Crystalli-zation,SPC)或者连续波激光横向结晶法(CW-Laser LateralCrystallization,CLC)处理a-Si薄膜,再结晶为p-Si薄膜。
目前,在LTPS技术中,ELA(准分子激光退火)是目前常用的p-Si薄膜制备方法。ELA工艺中,a-Si薄膜受激光照射后的温度,中间高两端低,冷却过程中,两端形成结晶核,向中间结晶,这样得到的多晶硅晶粒尺寸偏小;若通过提高对非晶硅的激光照射能量来增加晶粒大小的话,由于衬底不耐高温,因此较高的激光能量会破坏衬底的性能。
发明内容
本申请的目的是提供一种主动开关及其制作方法和显示面板,可以在不影响衬底的同时得到晶粒尺寸较大的多晶硅,有利于提高主动开关的电学特性。
本申请公开了一种主动开关的制作方法,包括步骤:
在基板上形成缓冲薄膜;
在所述缓冲薄膜上形成不连续的第一多晶硅岛状薄膜;
在所述第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜;
在所述第二多晶硅薄膜上依次形成栅极绝缘薄膜、栅极和层间绝缘薄膜;以及
在所述层间绝缘薄膜上形成源极和漏极,所述源极和漏极分别贯穿所述层间绝缘薄膜和栅极绝缘薄膜,分别连接到所述第二多晶硅薄膜的两端。
可选的,所述在缓冲薄膜上形成不连续的第一多晶硅岛状薄膜的步骤包括:
对所述第一非晶硅薄膜使用激光照射,使所述第一非晶硅薄膜转化成不连续的第一多晶硅岛状薄膜。
可选的,所述在第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜的步骤包括:
对所述第二非晶硅薄膜使用激光照射,使所述第二非晶硅薄膜转化成第二多晶硅薄膜。
可选的,将所述第二非晶硅薄膜转化成第二多晶硅薄膜后,对所述第二多晶硅薄膜的表面进行抛光处理。
在基板上形成遮光薄膜;
在所述遮光薄膜上形成由绝缘材料构成的阻挡薄膜;以及
本申请还公开了一种主动开关,包括依次堆叠设置的基板、缓冲薄膜、第一多晶硅岛状薄膜、第二多晶硅薄膜、栅极绝缘薄膜、栅极和层间绝缘薄膜,所述层间绝缘薄膜上设有源极和漏极,所述源极和漏极分别贯穿所述层间绝缘薄膜和栅极绝缘薄膜,分别连接到所述第二多晶硅薄膜的两端。
可选的,所述第一多晶硅岛状薄膜为不连续的岛状。
可选的,所述缓冲薄膜包括遮光薄膜和阻挡薄膜,所述遮光薄膜设置在所述基板和所述阻挡薄膜之间,且所述阻挡薄膜由绝缘材料构成。
本申请还公开了一种显示面板,包括如上所述的主动开关,以及被配置为显示画面的像素,所述主动开关控制所述像素打开或关闭。
相对于直接对非晶硅薄膜进行激光照射使其结晶的方案来说,本申请在第二多晶硅薄膜下方增设不连续的第一多晶硅岛状薄膜,首先两薄膜的多晶硅能够使得主动开关中的半导体厚度增加,减缓了半导体中导电粒子的传播,减轻了主动开关中漏电流的问题。另外,结合第一多晶硅岛状薄膜和激光脉冲这两者对第二多晶硅薄膜进行结晶,提高了结晶效果,使得在不需要将激光功率调大的同时就能使第二多晶硅薄膜中的晶粒尺寸增大,从而不影响基板中衬底的性能,而且主动开关在导通时,导电粒子容易从大尺寸的晶粒间隙中穿过,有利于提高主动开关的电学性能。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解,其构成了说明书的一部分,用于例示本申请的实施方式,并与文字描述一起来阐释本申请的原理。显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。在附图中:
图1是本申请的一实施例的一种显示面板的示意图;
图2是本申请的一实施例的一种主动开关的示意图;
图3是本申请的一实施例的一种主动开关制作方法的流程图;
图4是本申请的另一实施例的一种主动开关制作流程的示意图。
其中,100、显示面板;200、主动开关;210、基板;220、遮光薄膜;230、第一多晶硅岛状薄膜;240、第二多晶硅薄膜;250、栅极绝缘薄膜;260、栅极;270、源极;280、漏极;290、层间绝缘薄膜;300、阻挡薄膜;310、像素;320、第一非晶硅薄膜;330、第二非晶硅薄膜;340、缓冲薄膜。
具体实施方式
需要理解的是,这里所使用的术语、公开的具体结构和功能细节,仅仅是为了描述具体实施例,是代表性的,但是本申请可以通过许多替换形式来具体实现,不应被解释成仅受限于这里所阐述的实施例。
在本申请的描述中,术语“第一”、“第二”仅用于描述目的,而不能理解为指示相对重要性,或者隐含指明所指示的技术特征的数量。由此,除非另有说明,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征;“多个”的含义是两个或两个以上。术语“包括”及其任何变形,意为不排他的包含,可能存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
另外,“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系的术语,是基于附图所示的方位或相对位置关系描述的,仅是为了便于描述本申请的简化描述,而不是指示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。
此外,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,或是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
下面参考附图和可选的实施例对本申请作详细说明。
如图1所示,是一种显示面板100的示意图,所述显示面板100包括两块对向设置的阵列基板和彩膜基板,所述阵列基板上设有主动开关200,所述主动开关200用于控制所述显示面板100中像素310的打开和关闭。如图2所示,是一种主动开关200的示意图,所述主动开关200为低温多晶硅薄膜晶体管,其包括基板210、缓冲薄膜240、第一多晶硅岛状薄膜230、第二多晶硅薄膜240、栅极绝缘薄膜250、栅极260、源极270、漏极280和层间绝缘薄膜290,所述层间绝缘薄膜290、栅极260、栅极绝缘薄膜250、第二多晶硅薄膜240、第一多晶硅岛状薄膜230、缓冲薄膜340和基板210从上到下依次堆叠设置,所述源极270和漏极280贯穿所述层间绝缘薄膜290和栅极绝缘薄膜250,分别连接到所述第二多晶硅薄膜240的两端;所述第二多晶硅薄膜240包括两个高掺杂区、两个低掺杂区和一个本征区,所述本征区不掺杂,两个低掺杂区的一端与所述本征区的两端相贴,两个高掺杂区分别与两个所述低掺杂区的另一端相贴,通过对第二多晶硅薄膜240的掺杂,从而降低主动开关的漏电流。另外,所述缓冲薄膜340包括遮光薄膜220和阻挡薄膜300,所述阻挡薄膜300设置在所述遮光薄膜220和第一多晶硅岛状薄膜230之间,且所述阻挡薄膜300由绝缘材料构成;阻挡薄膜300的设置能够减缓激光照射时对基板210和遮光薄膜220的影响。所述遮光薄膜220的材料为有机化合物,如黑色树脂等,遮光薄膜220的设置用以防止背光源照射到多晶硅上,产生漏电流。
本申请通过在第二多晶硅薄膜240下方增设第一多晶硅岛状薄膜230,首先两薄膜的多晶硅能够使得主动开关200中的半导体厚度增加,减缓了半导体中导电粒子的传播,减轻了主动开关200中漏电流的问题。另外,在第二多晶硅薄膜240结晶的过程中,第一多晶硅岛状薄膜230会诱导第二多晶硅薄膜240下方局部结晶,激光脉冲使得第二多晶硅薄膜240的上方结晶,结合第一多晶硅岛状薄膜230和激光脉冲两者对第二多晶硅薄膜240进行结晶,极大地提高了第二多晶硅薄膜240的结晶速率,进一步提高了结晶效果,使得在不改变激光器功率的同时使第二多晶硅薄膜240中的晶粒尺寸增大,这样不会对基板210中的玻璃基底构成影响,且主动开关200在导通时,导电粒子容易从大尺寸的晶粒间隙中穿过,有利于提高主动开关200的电学性能。
具体的,所述第一多晶硅岛状薄膜230是不连续的,由于一般的多晶硅薄膜中经常会存在部分未结晶,导致诱导性变差,本申请采用不连续的第一多晶硅岛状薄膜230,使得第一多晶硅岛状薄膜230的表面积增大,在结晶的过程中结晶度高,对第二多晶硅薄膜240的诱导效果好。所述第一多晶硅岛状薄膜230的厚度在之间,所述第二多晶硅薄膜240的厚度在之间。由于第一多晶硅岛状薄膜230只与第二多晶硅薄膜240的下表面相贴,且只能诱导第二多晶硅薄膜240的局部结晶,因此将第一多晶硅岛状薄膜230的厚度在之间这个较薄的薄薄膜区间使得第一多晶硅岛状薄膜230既能够对第二多晶硅薄膜240起到诱导作用,又不会浪费第一多晶硅岛状薄膜230材料,还能够避免主动开关200中半导体的厚度增加过多导致半导体的性能变差。
如图3所示,作为本申请的另一实施例,公开了一种主动开关的制作方法,包括步骤:
S1:在基板上形成缓冲薄膜;
S2:在所述缓冲薄膜上形成不连续的第一多晶硅岛状薄膜;
S3:在所述第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜;
S4:在所述第二多晶硅薄膜上依次形成栅极绝缘薄膜、栅极和层间绝缘薄膜;
S5:在所述层间绝缘薄膜上形成源极和漏极,所述源极和漏极分别贯穿所述层间绝缘薄膜和栅极绝缘薄膜,分别连接到所述第二多晶硅薄膜的两端。
具体的,S1步骤还包括以下步骤:
S12:对所述第一非晶硅薄膜使用激光照射,使所述第一非晶硅薄膜转化成不连续的第一多晶硅岛状薄膜。
其中,由于第一非晶硅薄膜的厚度在之间,当第一非晶硅薄膜受到激光照射时,硅原子会发生聚集,从而使得形成的第一多晶硅岛状薄膜为不连续的岛状;若第一非晶硅薄膜的厚度较大,则第一非晶硅受到受到激光照射不会形成不连续的形状。受到激光照射后,较薄且不连续的第一多晶硅岛状薄膜中的硅原子结晶度很高,对第二多晶硅薄膜的诱导效果好;若第一多晶硅岛状薄膜是连续的,则要求第一非晶硅薄膜的厚度增加,使得硅聚集后形成的第一多晶硅岛状薄膜是连续,但是这样的多晶硅薄膜中的结晶度不完全,对第二多晶硅薄膜诱导的效果较差。
其中,S11步骤还包括以下步骤:
S111:在基板上形成遮光薄膜;
S112:在所述遮光薄膜上形成由绝缘材料构成的阻挡薄膜;
由于第一非晶硅的厚度较薄,通过在第一非晶硅下方增设遮光薄膜和阻挡薄膜,防止对第一非晶硅照射时激光能量对基板造成影响;且遮光薄膜能起到防止背光照射到多晶硅上造成漏电流的问题,阻挡薄膜还能防止非晶硅中的粒子纵向扩散。
另外,S3步骤包括以下步骤:
S32:对所述第二非晶硅薄膜使用激光照射,使所述第二非晶硅薄膜转化成第二多晶硅薄膜。
如图4所示,由于第一多晶硅岛状薄膜320是不连续的,会导致形成后的第二非晶硅薄膜330表面不平整,将第二非晶硅薄膜330的厚度设置在之间,使得形成后的第二多晶硅薄膜240的厚度较大,便于后续对第二多晶硅薄膜240的表面进行抛光处理,防止由于第二多晶硅膜薄膜240变薄导致性能变差,可采用化学机械抛光技术处理表面使其平坦化。在S1和S2步骤中,将基板210置于500摄氏度条件下,用准分子激光器对第一非晶硅薄膜320和第二非晶硅薄膜330进行激光照射。
需要说明的是,本方案中涉及到的各步骤的限定,在不影响具体方案实施的前提下,并不认定为对步骤先后顺序做出限定,写在前面的步骤可以是在先执行的,也可以是在后执行的,甚至也可以是同时执行的,只要能实施本方案,都应当视为属于本申请的保护范围。
本申请的技术方案可以广泛用于各种显示面板,如TN(Twisted Nematic,扭曲向列型)显示面板、IPS(In-Plane Switching,平面转换型)显示面板、VA(VerticalAlignment,垂直配向型)显示面板、MVA(Multi-Domain Vertical Alignment,多象限垂直配向型)显示面板,当然,也可以是其他类型的显示面板,如OLED(Organic Light-EmittingDiode,有机发光二极管)显示面板,均可适用上述方案。
以上内容是结合具体的可选实施方式对本申请所作的进一步详细说明,不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本申请的保护范围。
Claims (6)
1.一种主动开关的制作方法,其特征在于,包括步骤:
在基板上形成缓冲薄膜;
在所述缓冲薄膜上形成不连续的第一多晶硅岛状薄膜;
在所述第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜;
在所述第二多晶硅薄膜上依次形成栅极绝缘薄膜、栅极和层间绝缘薄膜;以及
在所述层间绝缘薄膜上形成源极和漏极,所述源极和漏极分别贯穿所述层间绝缘薄膜和栅极绝缘薄膜,分别连接到所述第二多晶硅薄膜的两端;
所述在所述缓冲薄膜上形成不连续的第一多晶硅岛状薄膜的步骤包括:
对所述第一非晶硅薄膜使用激光照射,使所述第一非晶硅薄膜转化成不连续的第一多晶硅岛状薄膜;
其中,将基板置于500摄氏度条件下,用准分子激光器对第一非晶硅薄膜进行激光照射,形成第一多晶硅岛状薄膜;
所述在所述第一多晶硅岛状薄膜上采用激光诱导形成第二多晶硅薄膜的步骤包括:
对所述第二非晶硅薄膜使用激光照射,使所述第二非晶硅薄膜转化成第二多晶硅薄膜。
2.如权利要求1所述的一种主动开关的制作方法,其特征在于,将所述第二非晶硅薄膜转化成第二多晶硅薄膜后,对所述第二多晶硅薄膜的表面进行抛光处理。
5.如权利要求4所述的一种主动开关,其特征在于,所述缓冲薄膜包括遮光薄膜和阻挡薄膜,所述遮光薄膜设置在所述基板和所述阻挡薄膜之间,且所述阻挡薄膜由绝缘材料构成。
6.一种显示面板,其特征在于,包括如权利要求4至5任意一项所述的主动开关,以及被配置为显示画面的像素,所述主动开关控制所述像素打开或关闭。
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