CN112562766A - 一种重读管理方法、固态硬盘控制器及固态硬盘 - Google Patents
一种重读管理方法、固态硬盘控制器及固态硬盘 Download PDFInfo
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- CN112562766A CN112562766A CN202011539962.6A CN202011539962A CN112562766A CN 112562766 A CN112562766 A CN 112562766A CN 202011539962 A CN202011539962 A CN 202011539962A CN 112562766 A CN112562766 A CN 112562766A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
- G06F11/073—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a memory management context, e.g. virtual memory or cache management
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0793—Remedial or corrective actions
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113595562A (zh) * | 2021-07-23 | 2021-11-02 | 深圳宏芯宇电子股份有限公司 | 软数据处理方法、装置、存储介质及解码器 |
CN114049910A (zh) * | 2022-01-13 | 2022-02-15 | 深圳华电通讯有限公司 | 一种nand重读档位的换挡方法、***及相关组件 |
CN114138190A (zh) * | 2021-11-19 | 2022-03-04 | 北京得瑞领新科技有限公司 | 闪存设备的数据读取方法、装置、存储介质及闪存设备 |
CN114296645A (zh) * | 2021-12-17 | 2022-04-08 | 合肥大唐存储科技有限公司 | 一种Nand闪存中重读方法和固态硬盘 |
WO2022134712A1 (zh) * | 2020-12-23 | 2022-06-30 | 深圳大普微电子科技有限公司 | 一种阈值电压的管理方法、读取闪存数据的方法 |
CN115620760A (zh) * | 2022-09-16 | 2023-01-17 | 上海江波龙数字技术有限公司 | 一种最优读出阈值电压的搜索方法、终端及存储介质 |
CN116954524A (zh) * | 2023-09-20 | 2023-10-27 | 深圳市爱普特微电子有限公司 | 一种抗干扰的flash数据读取方法及装置 |
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US20150161004A1 (en) * | 2013-12-11 | 2015-06-11 | International Business Machines Corporation | Read buffer architecture supporting integrated xor-reconstructed and read-retry for non-volatile random access memory (nvram) systems |
CN108647109A (zh) * | 2018-03-27 | 2018-10-12 | 深圳忆联信息***有限公司 | 一种固态硬盘提升ldpc纠错能力的方法 |
CN108986865A (zh) * | 2018-06-29 | 2018-12-11 | 长江存储科技有限责任公司 | 非易失性存储***及其读取方法 |
CN110515760A (zh) * | 2019-08-29 | 2019-11-29 | 北京计算机技术及应用研究所 | 一种基于机器学习的ldpc闪存纠错方法 |
CN110706735A (zh) * | 2019-09-30 | 2020-01-17 | 中国科学院微电子研究所 | 一种NAND Flash存储器读阈值电压修复方法 |
US20200066354A1 (en) * | 2018-08-24 | 2020-02-27 | International Business Machines Corporation | Error recovery of data in non-volatile memory during read |
CN111863098A (zh) * | 2020-07-30 | 2020-10-30 | 深圳大普微电子科技有限公司 | 一种读操作处理方法、装置及可读存储介质 |
-
2020
- 2020-12-23 CN CN202011539962.6A patent/CN112562766B/zh active Active
Patent Citations (7)
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US20150161004A1 (en) * | 2013-12-11 | 2015-06-11 | International Business Machines Corporation | Read buffer architecture supporting integrated xor-reconstructed and read-retry for non-volatile random access memory (nvram) systems |
CN108647109A (zh) * | 2018-03-27 | 2018-10-12 | 深圳忆联信息***有限公司 | 一种固态硬盘提升ldpc纠错能力的方法 |
CN108986865A (zh) * | 2018-06-29 | 2018-12-11 | 长江存储科技有限责任公司 | 非易失性存储***及其读取方法 |
US20200066354A1 (en) * | 2018-08-24 | 2020-02-27 | International Business Machines Corporation | Error recovery of data in non-volatile memory during read |
CN110515760A (zh) * | 2019-08-29 | 2019-11-29 | 北京计算机技术及应用研究所 | 一种基于机器学习的ldpc闪存纠错方法 |
CN110706735A (zh) * | 2019-09-30 | 2020-01-17 | 中国科学院微电子研究所 | 一种NAND Flash存储器读阈值电压修复方法 |
CN111863098A (zh) * | 2020-07-30 | 2020-10-30 | 深圳大普微电子科技有限公司 | 一种读操作处理方法、装置及可读存储介质 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022134712A1 (zh) * | 2020-12-23 | 2022-06-30 | 深圳大普微电子科技有限公司 | 一种阈值电压的管理方法、读取闪存数据的方法 |
CN113595562A (zh) * | 2021-07-23 | 2021-11-02 | 深圳宏芯宇电子股份有限公司 | 软数据处理方法、装置、存储介质及解码器 |
CN114138190A (zh) * | 2021-11-19 | 2022-03-04 | 北京得瑞领新科技有限公司 | 闪存设备的数据读取方法、装置、存储介质及闪存设备 |
CN114296645A (zh) * | 2021-12-17 | 2022-04-08 | 合肥大唐存储科技有限公司 | 一种Nand闪存中重读方法和固态硬盘 |
CN114296645B (zh) * | 2021-12-17 | 2024-01-02 | 合肥大唐存储科技有限公司 | 一种Nand闪存中重读方法和固态硬盘 |
CN114049910A (zh) * | 2022-01-13 | 2022-02-15 | 深圳华电通讯有限公司 | 一种nand重读档位的换挡方法、***及相关组件 |
CN114049910B (zh) * | 2022-01-13 | 2022-04-22 | 深圳华电通讯有限公司 | 一种nand重读档位的换档方法、***及相关组件 |
CN115620760A (zh) * | 2022-09-16 | 2023-01-17 | 上海江波龙数字技术有限公司 | 一种最优读出阈值电压的搜索方法、终端及存储介质 |
CN115620760B (zh) * | 2022-09-16 | 2023-10-20 | 上海江波龙数字技术有限公司 | 一种最优读出阈值电压的搜索方法、终端及存储介质 |
CN116954524A (zh) * | 2023-09-20 | 2023-10-27 | 深圳市爱普特微电子有限公司 | 一种抗干扰的flash数据读取方法及装置 |
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