CN112548845B - Substrate processing method - Google Patents
Substrate processing method Download PDFInfo
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- CN112548845B CN112548845B CN202110188361.3A CN202110188361A CN112548845B CN 112548845 B CN112548845 B CN 112548845B CN 202110188361 A CN202110188361 A CN 202110188361A CN 112548845 B CN112548845 B CN 112548845B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a substrate processing method, which comprises the following steps: a grinding target surface shape confirmation step, namely polishing the processing surface of the first substrate and acquiring the polishing appearance of the first substrate, and reversing the polishing appearance of the first substrate to be used as the grinding target surface shape of the second substrate, so that the processing surface of the second substrate becomes flat after the grinding and polishing steps; a grinding step of adjusting the posture of a suction cup for placing the substrate according to a grinding target surface shape to grind the second substrate; and a polishing step of polishing the ground second substrate.
Description
Technical Field
The invention belongs to the technical field of substrate manufacturing, and particularly relates to a substrate processing method.
Background
In a later process stage of manufacturing an Integrated Circuit/semiconductor (IC), in order to reduce a package mounting height, reduce a chip package volume, improve thermal diffusion efficiency, electrical performance and mechanical performance of a chip, and reduce a chip processing amount, a substrate needs to be thinned before subsequent packaging, and the thickness of the thinned chip can even reach less than 5% of an initial thickness.
The substrate thinning technology is mainly applied to thinning the back surface of a substrate, wherein the back surface refers to the surface of the substrate without devices, and is generally a substrate, and the substrate material can be silicon, silicon oxide, silicon nitride, silicon carbide, sapphire and the like.
However, in the prior art, after the substrate is thinned, the main shaft pose of the thinning equipment is determined mainly by depending on the processing experience of an equipment operator, a systematic identification and quantitative analysis method for the surface shape feature is lacked, and an automatic precise decision for adjusting the main shaft pose is lacked. The existing method relying on the operation experience of equipment operators has the problems of poor consistency of surface shape compensation, more iteration times, low speed, low precision and the like, and limits the precision and the automation and intelligent level promotion of thinning equipment.
Disclosure of Invention
The present invention aims to solve at least to some extent one of the technical problems existing in the prior art.
Therefore, the embodiment of the invention provides a substrate processing method, which comprises the following steps:
a grinding target surface shape confirmation step, namely polishing the processing surface of the first substrate and acquiring the polishing appearance of the first substrate, and reversing the polishing appearance of the first substrate to be used as the grinding target surface shape of the second substrate, so that the processing surface of the second substrate becomes flat after the grinding and polishing steps;
a grinding step of adjusting the posture of a suction cup for placing the substrate according to a grinding target surface shape to grind the second substrate;
and a polishing step of polishing the ground second substrate.
As a preferred embodiment, the step of acquiring the polished profile of the first substrate includes: the method comprises the steps of thickness detection, morphology reversal and feature extraction, wherein in the thickness detection step, a plurality of measuring points are selected on a polished surface of a substrate in a contact or non-contact mode to measure the thickness distribution of each position of the substrate.
In a preferred embodiment, the topography inversion step is to perform mirroring with reference to a horizontal plane on which the edge of the substrate is located, and an inverted topography formed by the topography inversion is a grinding target surface shape.
As a preferred embodiment, the feature extraction step is to extract the fullness and the crown of the ground target surface shape based on the reversed morphology, the fullness being a maximum value of a vertical distance between an intermediate measurement point and a convex-concave line, the convex-concave line being a straight line connecting a start measurement point and a final measurement point, the convex-concave being a height difference between the start measurement point and the final measurement point, the intermediate measurement point being a measurement point between the start measurement point and the final measurement point.
As a preferred embodiment, the posture of the suction cup is adjusted by adjusting the inclination of the suction cup based on the grinding target surface shape to adjust the relative spatial positional relationship between the suction cup and the grinding tool for performing the grinding operation.
As a preferred embodiment, the polishing step is chemical mechanical polishing, and the thickness deviation of the substrate after polishing is 0.02-5 um.
In a preferred embodiment, the carrier head used in the polishing step has at least one independent control chamber, the polishing removal rate of the edge position of the substrate is greater than that of the center position of the substrate, the polished substrate has a convex-concave shape, and the grinding target surface has a convex-concave shape.
As a preferred embodiment, the polishing step serves to remove or reduce substrate damage formed during the grinding step.
The beneficial effects of the invention include: according to the processing characteristics of the polishing process, the processing parameters of the thinning process are set in a matching manner, the difficulty in regulating and controlling the appearance of the polishing process is reduced, and the flatness of the thinned substrate is ensured.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only, and which do not limit the scope of protection of the invention, wherein:
FIG. 1 is a top view of a substrate thinning apparatus of the present invention;
FIG. 2 is a perspective view of a substrate thinning apparatus of the present invention;
fig. 3 and 4 show a grinding module of the substrate thinning apparatus in a schematic perspective view and a top view, respectively;
FIG. 5 is a schematic illustration of the location of the grinding wheel and suction cup of the grinding module of the present invention;
FIG. 6 is a schematic view of a chemical mechanical polishing unit of the substrate thinning apparatus of the present invention;
FIG. 7 is a flow chart of the operation of the substrate thinning apparatus of the present invention;
FIG. 8 is a flow chart of a method of processing a substrate according to the present invention;
FIG. 9 is a flow chart of the grinding target profile acquisition of the present invention;
FIG. 10(a) is a distribution diagram of measurement points corresponding to the thickness of a film on the surface of a substrate measured on line;
FIG. 10(b) is a distribution diagram of measurement points corresponding to off-line measurement of the film thickness on the substrate surface;
FIG. 11 is a schematic view of a ground target surface profile obtained after the reversal of the polishing topography of the present invention;
FIGS. 12-14 are diagrams illustrating the method of defining and calculating the concavity and the fullness of a surface feature;
fig. 15(a), 15(b) are schematic views of the posture adjustment mechanism of the present invention;
fig. 16 to 17 show the spatial positional relationship of the suction cups with respect to the refining spindle described in terms of angle α, angle β;
fig. 18 is a schematic diagram of an embodiment of a control device provided by the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and a Wafer (Wafer) may be abbreviated as W, also referred to as a Substrate (Substrate), which means and actually functions equivalently.
Fig. 1 shows a schematic view of a substrate thinning apparatus. The substrate thinning equipment comprises an equipment front-end module 1, a grinding module 3 used for grinding a substrate and a polishing module 2 used for carrying out chemical mechanical polishing on the substrate after grinding is finished. In the embodiment shown in fig. 1, the polishing module 2 further comprises a transfer unit that transfers the substrate. The equipment front end module 1 is arranged on one side of the front end of the substrate thinning equipment, is a transition module for conveying a substrate from the outside to the inside of an equipment machine table, and is used for realizing the entrance and exit of the substrate so as to realize the dry entrance and dry exit of the substrate. The grinding module 3 is disposed at the end of the substrate thinning apparatus for grinding the substrate, such as performing rough grinding and finish grinding, or performing rough grinding, or performing finish grinding. The polishing module 2 is arranged between the equipment front-end module 1 and the grinding module 3, is used for carrying out chemical mechanical polishing on the substrate by utilizing the bearing head capable of adjusting pressure according to the thickness distribution and subarea of the substrate after the substrate is ground, and also has the function of transmitting the substrate among the three modules. The apparatus front end module 1 includes a substrate storage unit 11 and a first transfer unit 12. The polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23, and a post-processing unit 24.
Fig. 2 is a perspective view of a substrate thinning apparatus according to a preferred embodiment of the present disclosure, which includes an apparatus front end module 1, a grinding module 3 for performing rough grinding and finish grinding on a substrate, and a polishing module 2 for performing chemical mechanical polishing and substrate transfer on the substrate after completion of the rough grinding and finish grinding. The equipment front end module 1 is arranged on one side of the front end of the substrate thinning equipment, the grinding module 3 is arranged at the tail end of the substrate thinning equipment, and the polishing module 2 is arranged between the equipment front end module 1 and the grinding module 3.
Device front-end module 1:
the apparatus front end module 1 includes a substrate storage unit 11 and a first transfer unit 12. The substrate storage unit 11 is disposed at a front end side of the substrate thinning apparatus, and the first transfer unit 12 is disposed between the substrate storage unit 11 and the polishing module 2, for effecting transfer of the substrate between the substrate storage unit 11 and the polishing module 2.
The substrate storage unit 11 is composed of a plurality of Front Opening Unified Pod (FOUP) 111, and specifically may be two, three, or the like. The front-opening substrate transport box 111 is a container used for protecting, transporting and storing substrates in a semiconductor process, and its main components are a front-opening container capable of accommodating substrates and a front-opening door structure hermetically connected to an outer wall of a substrate thinning apparatus so as to communicate the front-opening container with the inside of the apparatus.
The first transfer unit 12 includes a pick-and-place manipulator 121 and a first transfer rail, a base of the pick-and-place manipulator 121 is disposed on the first transfer rail, the base is slidable on the first transfer rail to realize movement between different positions, and in addition, a robot arm of the pick-and-place manipulator 121 is rotatable on the base, and the robot arm is extendable or collapsible. The chip taking and placing manipulator is a drying manipulator and is used for taking and placing dry and clean substrates. The pick-and-place robot may pick up a substrate to be processed from the substrate storage unit 11 through the door structure of the substrate transport box 111 and send the substrate to the polishing module 2, and may also receive the processed substrate from the polishing module 2 and place the substrate in the substrate transport box 111.
Grinding module 3:
the grinding module 3 includes a grinding unit 31, a fourth transfer unit 32, a measurement unit 33, and a cleaning unit 34.
Fig. 3 and 4 show the grinding unit 31 in a schematic perspective view and a plan view, respectively. The illustrated grinding unit 31 includes a table 311, a rough grinding section 313, a finish grinding section 315, and a grinding liquid supply section. The table 311 is provided with a suction cup 312 for sucking the substrate, the rough grinding portion 313 is provided with a rough grinding wheel 314 for rough grinding the substrate, and the finish grinding portion 315 is provided with a finish grinding wheel 316 for finish grinding the substrate. The grinding process is to press a grinding wheel against the surface of the substrate and rotate the grinding wheel to grind off a certain thickness.
The workbench 311 can rotate around a vertical central axis thereof, three suckers which can rotate independently are uniformly distributed on the workbench and are respectively a first sucker, a second sucker and a third sucker, the three suckers are porous ceramic suckers with completely identical structures so as to realize vacuum adsorption of a substrate, and the centers of the three suckers and a connecting line of the center of the workbench 311 mutually form an included angle of 120 degrees. The three suction cups 312 correspond to three stations, i.e., a rough grinding station, a finish grinding station, and a loading and unloading station, respectively, wherein two stations opposite to the grinding wheel are used for rough grinding and finish grinding, respectively, and the remaining one station is used for loading and unloading and cleaning of the substrate. The three suckers can be driven to switch among the three stations through the rotation of the workbench, so that the suckers can carry the substrate to circularly move according to the sequence of the loading and unloading station, the rough grinding station, the fine grinding station and the loading and unloading station. The present embodiment achieves full-automatic loading and unloading and continuous grinding and cleaning of the substrate by repeated cycles. The rotary worktable type substrate grinding has the advantages of high material removal rate, small substrate surface damage and easy realization of automation.
The rough grinding part 313 comprises a rough grinding wheel 314 in a cup-shaped structure, a rough grinding main shaft seat and a rough grinding feeding mechanism, the rough grinding wheel is connected to the bottom of the rough grinding main shaft to enable the rough grinding main shaft to drive the rough grinding wheel to rotate, so that the rough grinding wheel can rotatably grind the surface of a substrate, the rough grinding main shaft is connected with the rough grinding feeding mechanism through the rough grinding main shaft seat to move up and down, and the rough grinding wheel is controlled by the rough grinding feeding mechanism to carry out axial plunge feeding grinding relative to the substrate. In this embodiment, the rough grinding wheel may be a diamond grinding wheel, the surface of which is rough to realize rapid substrate grinding, reducing the substrate thinning time. During rough grinding, the feeding speed of the rough grinding wheel relative to the substrate is 2-10 μm/s so as to realize high-speed feeding, and the rotating speed of the rough grinding wheel is 2000-4000 rpm. The radius of the rough grinding wheel is matched with the radius of the substrate, and can be 1 to 1.2 times of the radius of the substrate. The thickness of the substrate is reduced by more than 600 μm in the rough grinding process, and after the rough grinding, the thickness of the substrate can be reduced to be within 150 μm.
The finish grinding portion 315 includes a finish grinding wheel 316 in a cup-shaped structure, a finish grinding spindle base and a finish grinding feed mechanism, the finish grinding wheel is connected to the bottom of the finish grinding spindle so that the finish grinding spindle drives the finish grinding wheel to rotate, thereby realizing the rotary grinding of the finish grinding wheel to the surface of the substrate, the finish grinding spindle is connected with the finish grinding feed mechanism through the finish grinding spindle base to move up and down, and the finish grinding wheel is controlled by the finish grinding feed mechanism to perform axial plunge feed grinding relative to the substrate. In this embodiment, the finish grinding wheel may be a diamond grinding wheel having a surface roughness lower than that of the rough grinding wheel, and since severe surface defects and losses may be generated by rapidly removing the surface material of the substrate by the rough grinding, the fine surface of the finish grinding wheel is used for low-speed grinding to reduce the thickness of the damaged layer on the surface of the substrate and improve the surface quality of the substrate. In the finish grinding, the feed speed of the finish grinding wheel relative to the substrate is 0.1-1 μm/s so as to realize low-speed feed to improve the grinding precision, and the rotating speed of the finish grinding wheel is 2000-4000 rpm. The radius of the finish grinding wheel matches the radius of the substrate and may be 1 to 1.2 times the radius of the substrate. The thickness of the substrate is reduced by the finish grinding process to be 50 to 100 μm, and after the finish grinding, the thickness of the substrate may be reduced to be 10 to 50 μm.
The grinding fluid supply part is used for spraying grinding fluid to the surface of the substrate to assist grinding during rough grinding and/or fine grinding, and the grinding fluid can be deionized water.
The fourth transfer unit 32 includes a simple robot 321, the simple robot 321 takes the substrate from the moving buffer 212 shown in fig. 2 and feeds the substrate into the grinding unit 31 for grinding, and after the grinding and cleaning are completed, the simple robot 321 takes the substrate from the grinding unit 31 and then places the substrate in the moving buffer 212 for subsequent transfer of the substrate. The simple robot 321 is provided therein with a vacuum line to vacuum-adsorb the substrate.
The measurement unit 33 includes a contact-type measuring instrument 331 and a non-contact-type optical measuring instrument 332, as shown in fig. 4, and can realize online monitoring of the substrate thickness. The probe of the contact type measuring instrument is pressed on the surface of the substrate to measure the thickness of the substrate by using the height difference of the upper surface and the lower surface of the substrate. The contact measuring apparatus is provided with two sets, which are respectively arranged in the rough grinding part 313 and the fine grinding part 315. The non-contact optical measuring instrument irradiates the substrate with infrared light and calculates the thickness of the substrate according to different reflected lights of the upper surface and the lower surface of the substrate.
The cleaning unit 34 includes a first cleaning part and a second cleaning part. The first cleaning part is used for cleaning and polishing the sucker and is provided with a rotatable first body, the bottom of the first body is provided with a sucker cleaning brush and a sucker polishing oilstone, and the bottom of the first body is also provided with a through hole for spraying cleaning fluid to the sucker through a pipeline inside the first body. The second cleaning part is used for cleaning the substrate and is provided with a rotatable second body, the bottom of the second body is provided with a brush for cleaning the substrate, and the bottom of the second body is also provided with a through hole for spraying cleaning liquid to the substrate through a pipeline inside the second body.
Fig. 5 shows a grinding wheel and suction cups for the grinding unit 31. During grinding, the substrate is adsorbed on the sucking disc and is driven to rotate, and the grinding wheel presses on the substrate, rotates and feeds along the axial direction F according to a certain feeding speed, so that the substrate is ground.
And (3) polishing module 2:
the polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23, and a post-processing unit 24. The chemical mechanical polishing unit 23 and the second transfer unit 21 are arranged in parallel along the length direction of the apparatus. The post-treatment unit 24 is located between the first transfer unit 12 and the chemical mechanical polishing unit 23. The third transfer unit 22 is adjacent to each of the first transfer unit 12, the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24, and serves to transfer the substrates to and from each other among the first transfer unit 12, the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24.
Chemical Mechanical Planarization (CMP) is a global surface Planarization technique that can precisely and uniformly planarize a substrate to a desired thickness and flatness. The chemical mechanical polishing unit 23 receives the substrate from the third transfer unit 22 and performs a chemical mechanical polishing process to improve the planarization effect of the substrate. As shown in fig. 1 and 2 and in fig. 6, the chemical mechanical polishing unit 23 includes a storage plate portion 231, a polishing disk 232, a polishing pad 233 adhered to the polishing disk 232, a carrier head 234 that adsorbs and rotates the substrate, a dresser 235 that dresses the polishing pad 233, and a liquid supply portion 236 that supplies polishing liquid to the surface of the polishing pad 233. Before polishing starts, the wet robot 222 of the third transfer unit 22 carries the substrate to the storage section 231, and the carrier head 234 moves from the storage section 231 to above the polishing platen 232 in the radial direction of the polishing platen 232 after loading the substrate thereon. During chemical mechanical polishing, the carrier head 234 presses the substrate against the polishing pad 233 covered by the surface of the polishing pad, and the size of the polishing pad 233 is larger than the size of the substrate to be polished, for example, 1.2 times or more the size of the substrate, thereby ensuring uniform polishing of the substrate. The carrier head 234 performs a rotating motion and reciprocates in a radial direction of the polishing platen 232 so that the surface of the substrate contacting the polishing pad 233 is gradually polished while the polishing platen 232 rotates, and the liquid supply part 236 sprays polishing liquid onto the surface of the polishing pad 233. The substrate is rubbed against the polishing pad 233 by the relative movement of the carrier head 234 and the polishing platen 232 under the chemical action of the polishing liquid to perform polishing. Polishing liquid consisting of submicron or nanometer abrasive particles and chemical solution flows between a substrate and a polishing pad 233, the polishing liquid is uniformly distributed under the action of transmission and rotating centrifugal force of the polishing pad 233 to form a layer of liquid film between the substrate and the polishing pad 233, chemical components in the liquid and the substrate generate chemical reaction to convert insoluble substances into easily soluble substances, then the chemical reactants are removed from the surface of the substrate through micro-mechanical friction of the abrasive particles and dissolved into the flowing liquid to be taken away, namely surface materials are removed in an alternate process of chemical film forming and mechanical film removing to realize surface planarization treatment, thereby achieving the purpose of global planarization. During polishing, the dresser 235 serves to dress and activate the topography of the polishing pad 233. The dresser 235 can remove foreign particles remaining on the surface of the polishing pad, such as abrasive particles in the polishing liquid and waste materials falling off from the surface of the substrate, and can also flatten the surface deformation of the polishing pad 233 caused by the grinding, thereby ensuring the consistency of the surface topography of the polishing pad 233 during the polishing and further stabilizing the polishing removal rate. After the polishing is completed, the carrier head 234 adsorbs the substrate to place it on the deposit section 231, and the third transfer unit 22 takes the substrate from the deposit section 231 and conveys the substrate to the post-processing unit 24.
Fig. 7 shows, with arrows, an operational flow of the substrate thinning apparatus shown in fig. 1, including:
the pick-and-place robot 121 of the first transfer unit 12 picks up the substrate from the substrate transport cassette 111 of the substrate storage unit 11;
a fixed buffer 211 for transferring the substrate to the second transfer unit 21 by the pick-and-place robot 121;
the dry robot 221 (shown in fig. 2) of the third transfer unit 22 transfers the substrate placed in the fixed buffer 211 to the moving buffer 212, and at this time, the moving buffer 212 approaches the fixed buffer 211;
the moving buffer 212 moves to be close to the grinding module 3 (shown by a dotted line in fig. 7) with the substrate;
the simple robot of the fourth transfer unit 32 transports the substrate placed in the moving buffer 212 to the table 311 of the grinding unit 31, and fixes the substrate on the suction cup 312 corresponding to the current loading/unloading station;
the worktable 311 rotates forwards by 120 degrees, and the substrate moves to a rough grinding station for rough grinding;
after the rough grinding is finished, the working table 311 rotates forwards by 120 degrees, and the substrate moves to a finish grinding station for finish grinding;
after finish grinding, the table 311 rotates in the reverse direction by 240 °, and the substrate moves to a loading and unloading station;
the ground substrate is cleaned and dried by the cleaning unit 34 at the loading and unloading station, and then taken down by the simple manipulator and placed in the mobile buffer part 212;
the movement buffer part 212 moves to the other end to allow the wet robot 222 (shown in fig. 2) of the third transfer unit to take down and place the substrate in the storage part 231 of the chemical mechanical polishing unit 23;
the substrate is polished in the chemical mechanical polishing unit 23;
after the chemical mechanical polishing is completed, the substrate is taken out of the storage section 231 by the wet robot 222 of the third transfer unit 22 and then is carried into the post-treatment unit 24;
the substrate is cleaned and dried in the post-processing unit 24;
after the substrate is cleaned and dried, the pick-and-place robot 121 of the first transfer unit 12 takes out the cleaned substrate from the post-processing unit 24 and stores the cleaned substrate in the substrate transfer cassette 111.
The present invention provides a substrate processing method, a flowchart of which is shown in fig. 8, and the method includes:
s1 grinding target surface shape confirmation step
Polishing the processing surface of the first substrate, acquiring the polishing morphology of the first substrate, and reversing the polishing morphology of the first substrate to be used as the grinding target surface shape of the second substrate, so that the processing surface of the second substrate becomes flat after grinding and polishing steps;
s2 grinding step
Adjusting the posture of a sucker for carrying the substrate according to the grinding target surface shape so as to grind the second substrate;
s3 polishing step
And polishing the ground second substrate. The polishing step is chemical mechanical polishing, and the thickness deviation of the polished substrate is 0.02-5 um.
In the polishing step, a carrier head having at least one independent control chamber is used, for example, the carrier head may be provided with an elastic membrane having 1, 2, 3 or 5 independent control chambers. In the polishing process, the linear velocity of the edge position of the substrate is greater than that of the center position, and the edge position of the substrate is easier to contact with the polishing solution, so that the polishing removal rate of the edge position of the substrate is greater than that of the center position of the substrate, and the polished substrate is in a convex-concave shape.
According to the characteristic of the polishing step, the grinding target surface shape of the concave-convex shape can be obtained through shape reversal. Namely, the process characteristics of the polishing step are utilized, the grinding step and the polishing step are matched with each other, and the flatness (TTV) control of the surface of the substrate is realized.
As an embodiment of the present invention, the requirement on the pressure regulation capability of the carrier head configured to the polishing module 2 is not high, and the carrier head configured to the substrate thinning apparatus of the present invention mainly removes or reduces the substrate damage formed in the grinding step.
Further, the step of acquiring the polished profile of the first substrate includes:
s11, thickness detection;
s12, reversing the shape;
and S13, feature extraction.
A flowchart of obtaining a polished profile of a first substrate is shown in fig. 9. The thickness detection step is to select a plurality of measuring points on the polishing surface of the substrate in a contact or non-contact mode so as to measure the thickness distribution of each position of the substrate.
In the invention, the surface film thickness of the polished substrate can be measured in an online manner. That is, a film thickness detection device is provided in the polishing platen 232 to measure the surface film thickness of the substrate in real time during the polishing process. Fig. 10(a) is a distribution of one embodiment of online measurement of the film thickness on the surface of the substrate corresponding to the measurement points, which are represented by p (rij), where i represents the number of the Zone (Zone) corresponding to the substrate, and j represents the number of the measurement points in the same Zone. It is understood that the substrate surface film thickness can also be measured off-line, corresponding to the distribution of one embodiment of the measuring points, as shown in fig. 10 (b). In some embodiments, the polished substrate may be placed on a four-probe tester for film thickness measurements. It is understood that the polished substrate may also be transferred to the chuck 312 of the table 311, and the film thickness measurement is performed using the contact type measuring instrument 331 and/or the non-contact type optical measuring instrument 332 of the measuring unit 33. The number of the measuring points can be selected to accurately depict the surface shape characteristics and reduce the number of the measuring points as much as possible so as to improve the efficiency, for example, the number of the measuring points can be 30-50.
In the shape reversing step, a horizontal plane where the edge of the substrate is located is used as a reference to implement mirror image, and a reversed shape formed by reversing the shape is a grinding target surface shape. Fig. 11 is a graph of several exemplary grinding target profiles obtained after inversion. It will be understood that in the case of a topography reversal, the mirror image is taken about the horizontal plane in which the edge of the substrate lies, where the edge of the substrate is the edge of the longitudinal section of the substrate.
As an embodiment of the present invention, the feature extraction step is to extract the roughness δ 1 and the plumpness δ 2 of the ground target surface shape based on the reversed morphology.
The definition and calculation of the surface-shaped features of the roughness δ 1 and the plumpness δ 2 will be described below with reference to fig. 12-14. As shown in fig. 12, the r-axis represents the distance between each measurement point and the starting measurement point, and the t-axis represents the measured thickness of the substrate. According to the present invention, the concavity and convexity δ 1 may be defined as the difference between the thickness at the final measurement point and the thickness at the initial measurement point. In the example of fig. 12, the initial measurement point is the center point C of the upper surface of the substrate, and the final measurement point is one edge point a of the substrate. At this time, the roughness δ 1 is a difference between the thickness of the center point C and the thickness of the edge point a of the substrate. That is, the degree of concavity δ 1 at this time is the distance from the center point C of the upper surface of the substrate to the reference thickness line. The position of the reference thickness line is determined by the thickness value of the edge point A of the substrate, and the reference thickness line is parallel to the r axis. The degree of unevenness δ 1 is positive (i.e., δ 1 > 0) when the center point C of the upper surface of the substrate is at a position above the reference thickness line, and negative (i.e., δ 1 < 0) otherwise. For example, two portions e and f in fig. 13 show the case of positive asperity features, and two portions g and h in fig. 13 show the case of negative asperity features.
The fullness δ 2 can be defined as the maximum in the vertical distance between the intervening measurement point and the convex-concave line, which is the straight line connecting the starting measurement point and the final measurement point. In the example of 12, the starting measurement point is the center point C of the upper surface of the substrate and the final measurement point is one edge point A of the substrate with multiple intervening measurement points therebetween. Of course, in an extreme example, it is also possible to select only one intermediate measurement point, for example at one-half of the substrate radius. At this time, the maximum value of the vertical distances between the intermediate measurement point and the convex-concave curve is the vertical distance between the intermediate measurement point and the convex-concave curve itself. In this example, the ruggedness line is a straight line connecting the center point C and the edge point of the substrate, and the fullness δ 2 is the maximum distance from the contour point on the upper surface of the substrate to the ruggedness line. The degree of fullness δ 2 is positive (i.e., δ 2 > 0) when the point corresponding to the maximum distance is above the line of convexity, and negative (i.e., δ 2 < 0) when the other is negative. For example, the f and h parts in fig. 13 show the case of the positive double-fullness feature, and the e and g parts in fig. 13 show the negative double-fullness feature.
In the case where the initial measurement point is the center point C of the substrate and the final measurement point is the edge point a of the substrate, the roughness δ 1 may be expressed as a difference between the thickness of the center point C and the thickness of the edge point a. At this time, δ 1= TR-T0, where TR is the measured thickness at the edge point a, T0 is the measured thickness at the center point C, and R is the radius of the edge point, as shown in fig. 14.
Since the convex-concave curve is a straight line connecting the center point C and the edge point a of the substrate, the convex-concave curve can be described by the convex-concave curve equation: t (r) = kr + b, where k and b can be calculated from the radius and thickness corresponding to the center point C and the edge point a. For example, k may be expressed as k = (TR-T0)/R, while b is the measured thickness at the center point, i.e., b = T0. From this convexity and concavity line equation, the thickness t (r) at the corresponding point where the intervening measurement point vertically corresponds to the convexity and concavity line can be calculated.
Since the saturation δ 2 is defined as the maximum distance from the contour point on the upper surface of the substrate (i.e., each of the intermediate measurement points) to the roughness line, the saturation δ 2 can be obtained by calculating the distance from each of the intermediate measurement points to the roughness line, respectively, and then taking the maximum value thereof. For example, by detecting the thickness of several points by the thickness detection means, each intervening measurement point may be described by (ri, ti), where ri is the distance from the ith intervening measurement point to the starting measurement point, and ti is the measured thickness at the ith intervening measurement point. At this time, the saturation δ 2 can be obtained by calculating the distance d (point-to-straight line distance) from each point (ri, ti) to the convex-concave degree line and finding the maximum value.
In the grinding step, the posture of the suction cup is adjusted by adjusting the inclination of the suction cup based on the grinding target surface shape so as to adjust the relative spatial position relationship between the suction cup and a grinding tool for performing the grinding operation.
Fig. 15(a) and 15(b) show an attitude adjusting mechanism 170 of an embodiment of the present application, which may be disposed below the suction cups 312 and configured to adjust the spatial positional relationship of the suction cups 312 with respect to the grindstone 316 according to a condition so that the grindstone 316 performs a grinding operation on a substrate as required. In an embodiment, the attitude adjustment mechanism 170 may include a three-point support type structure including three support points 170A, 170B, 170C evenly arranged around the suction cup 312, one of the support points 170C may be fixed, and the remaining two support points 170A, 170B may be provided with a drive system so as to be movable to adjust the spatial positional relationship of the suction cup 312 with respect to the finishing wheel 316 in both directions. In an embodiment, the two supporting points 170A and 170B may be driven by a screw nut, a piezoelectric device, or the like to realize sub-micron precision motion, so as to realize precise control of the substrate table pose.
The inclination adjustment process of the suction cup 312 will be described by adjusting the spatial positional relationship of the suction cup 312 with respect to the grindstone 316. As shown in fig. 16-17, the spatial positional relationship of the axis of the suction cup 312 with respect to the axis of the refining spindle 315a is described by the angle α, β with reference to the axis of the refining spindle 315 a. As shown in fig. 16, the x, y, and z axes are perpendicular two by two, and the α and β angles describe the angular change (i.e., rotation angle) of the axis of the chuck 312 about the x and y axes, respectively. Fig. 17 shows a top view of the positional relationship of the suction cups 312 to the refining spindle 315a, where the x-axis is a horizontal axis in a horizontal plane and the y-axis is a vertical axis in a horizontal plane, where the angle alpha and angle beta indicate the rotation angle of the suction cups 312 around the x-axis and the y-axis, respectively. In addition, the angle α and the angle β have positive and negative directions, which can be determined according to the right-hand law. For example, if the thumb of the right hand points to the positive direction of the x-axis, the direction of the rest of the four-finger fist is positive for the angle α, and vice versa. Similarly, if the thumb of the right hand points to the positive direction of the y-axis, the direction of the rest of the four fingers to make a fist is the positive direction of the angle β, otherwise, the direction is the negative direction. In the process of equipment debugging and surface shape compensation grinding, the angle adjustment of the sucker 312 around the x axis and the y axis can be realized through a precise adjusting mechanism.
During grinding of the substrate, the suction cup 312 for adsorbing the substrate is machined into a conical surface with a certain height, wherein the height of the conical surface is generally 10-15 um; next, the substrate is attracted to the chuck 312, and the substrate surface is rotated by α around the x-axis to adjust the concavity and convexity of the substrate surface, and rotated by β around the y-axis to adjust the surface fullness of the substrate surface, thereby processing the target surface shape of the substrate.
Fig. 18 is a schematic diagram of an embodiment of a control device provided by the present invention. In this embodiment, the control apparatus includes: a processor, a memory, and a computer program stored in the memory and executable on the processor. The steps in the various embodiments of the method described above are implemented when the computer program is executed by a processor. Alternatively, the processor, when executing the computer program, implements the functions of the respective modules/units in the respective embodiments in the system embodiments described above.
The control device refers to a terminal with data processing capability, and includes but is not limited to a computer, a workstation, a server, and even some Smart phones, palmtop computers, tablet computers, Personal Digital Assistants (PDAs), Smart televisions (Smart TVs), and the like with excellent performance.
The control device may include, but is not limited to, a processor, a memory. Those skilled in the art will appreciate that fig. 18 is merely an example of a control device and is not intended to be limiting and may include more or fewer components than shown, or some components may be combined, or different components, e.g., the control device may also include input output devices, network access devices, buses, etc.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc.
The memory may be an internal storage unit of the control device, such as a hard disk or a memory of the control device. The memory may also be an external storage device of the control device, such as a plug-in hard disk provided on the control device, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like. Further, the memory may also include both an internal storage unit of the control device and an external storage device. The memory is used for storing computer programs and other programs and data needed for controlling the device. The memory may also be used to temporarily store data that has been output or is to be output.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A substrate processing method, comprising:
a grinding target surface shape confirmation step, namely polishing the processing surface of the first substrate and acquiring the polishing appearance of the first substrate, and reversing the polishing appearance of the first substrate to be used as the grinding target surface shape of the second substrate, so that the processing surface of the second substrate becomes flat after the grinding and polishing steps; the step of acquiring the polishing profile of the first substrate includes: thickness detection, morphology reversal and feature extraction; the thickness detection comprises the following steps: measuring the surface film thickness of the substrate in real time in the polishing process, and selecting a plurality of measuring points on the polishing surface of the substrate to measure the thickness distribution of each position of the substrate; in the shape reversing step, a horizontal plane where the edge of the substrate is located is used as a reference to implement mirror image, the reversed shape formed by reversing the shape is a grinding target surface shape, and the edge of the substrate is the edge of a longitudinal section of the substrate;
a grinding step of adjusting the posture of a suction cup for placing the substrate according to a grinding target surface shape to grind the second substrate;
and a polishing step of polishing the ground second substrate, wherein the polishing step is chemical mechanical polishing.
2. The substrate processing method according to claim 1, wherein the feature extraction step is to extract a degree of fullness and a degree of concavity and convexity of the ground target surface shape based on the reversed topography, the degree of fullness being a maximum value of a perpendicular distance between an intermediate measurement point and a convexoconcave line, the convexoconcave line being a straight line connecting an initial measurement point and a final measurement point, the degree of convexity being a difference in height between the initial measurement point and the final measurement point, the intermediate measurement point being a measurement point between the initial measurement point and the final measurement point.
3. The substrate processing method according to claim 2, wherein the adjusting of the posture of the chuck is adjusting an inclination of the chuck based on the grinding target surface shape to adjust a relative spatial positional relationship between the chuck and a grinding tool for performing the grinding operation.
4. The substrate processing method according to claim 1, wherein a thickness deviation of the substrate after polishing is 0.02 to 5 um.
5. The substrate processing method of claim 1, wherein the carrier head used in the polishing step has at least one independently controlled chamber, a polishing removal rate at an edge position of the substrate is greater than a polishing removal rate at a center position of the substrate, the polished substrate has a convex-concave shape, and the grinding target surface has a convex-concave shape.
6. The substrate processing method according to claim 1, wherein the polishing step is for removing or reducing damage of the substrate formed in the grinding step.
7. A control apparatus comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the substrate processing method according to any one of claims 1 to 6 when executing the computer program.
8. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer program which, when executed by a processor, implements the steps of the substrate processing method according to any one of claims 1 to 6.
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