CN112540429A - Preparation of low-loss As20S80Chalcogenide glass tunnel optical waveguide method - Google Patents
Preparation of low-loss As20S80Chalcogenide glass tunnel optical waveguide method Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
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Abstract
The invention discloses a method for preparing low-loss As20S80Method for preparing As in vacuum high-temperature furnace by using chalcogenide glass tunnel optical waveguide20S80Powder and use as an evaporation source, 10‑3Controlling the deposition rate to be 9-10A/sec under the vacuum condition of Pa, and evaporating and plating on the glass substrate to form deposited As with the thickness of 1 mu m20S80Film of, As obtained20S80A strip-shaped structure mask plate with the line width of 5 mu m is placed on the film, and the light intensity is 50-60 mW/cm2Irradiating the film with ultraviolet light with the wavelength of 300-430 nm for 70-90 minutes to enable the film illumination area to reach an illumination saturation state, and forming the As20S80Tunnel optical waveguide structure, As20S80Placing the tunnel optical waveguide in an annealing furnace, filling nitrogen for annealing at the temperature of 130 ℃ and near the glass transition temperature for 1h, continuing filling nitrogen for naturally cooling to room temperature, and preparing As with the loss As low As 0.7 dB/cm20S80A tunnel optical waveguide. The method of the invention is to evaporate As on the glass substrate20S80The film is subjected to ultraviolet irradiation and annealing treatment to prepare the tunnel optical waveguide, the preparation process is simple, the cost is low, and the prepared As20S80The tunnel optical waveguide has low transmission loss and good optical transmission performance.
Description
Technical Field
The invention relates to the technical field of optics, in particular to a method for preparing low-loss As20S80A chalcogenide glass tunnel optical waveguide method.
Background
Chalcogenide glass is a material with low phonon energy, so that the middle and far infrared regions have good light transmission, and the nonlinear optical effect of the chalcogenide glass is two orders of magnitude higher than that of quartz glass. Many properties of amorphous chalcogenide compounds have been widely studied and used for fabricating diffraction gratings, optical storage, waveguides, optical fiber structures, and the like. And amorphous As2S3In contrast, amorphous As20S80The covalent bond binding coordination number is lower, and the chemical bond defect concentration and the molecular fragment density are higher due to the unique electronic configuration and the higher number of secondary energy levels in the band gap. Thus, amorphous As20S80Film structure ratio of amorphous As2S3The film is more complex with sulfur-rich molecules outside the covalent bonds, As due to very weak interactions between these sulfur molecules by van der waals forces20S80Glass is known as a soft glassy semiconductor. Amorphous As20S80Long range disorder creates many sub-levels in the forbidden band. As in deposit state20S80The photo-blocking effect of the photo-optic effect of the film indicates that the transition of the sub-level electrons is achieved by pumping the sub-level electrons under irradiation of the band gap region. This phenomenon is not observed in As20S80Observed in the film. As20S80The light blocking effect has wide application prospect in the light waveguide, such as an all-optical attenuator.
Development of As20S80The preparation of chalcogenide thin film and the technology of making the chalcogenide thin film into micron-sized low-loss tunnel optical waveguide are favorable for better realizing As20S80The use of chalcogenide glass in waveguide devices. However, due to As20S80The arsenic molecules in the film are not gasified in the reactive ion etching process, and As is used for wet etching20S80The materials decompose in alkaline solvents, so reactive ion etching or wet etching techniques commonly used to fabricate other glass waveguides are not suitable for making As20S80Chalcogenide glass tunnel optical waveguides. In the prior art, other chalcogenide glass system ridge type strip waveguides are prepared by utilizing a wet chemical etching technology, but the transmission loss of the ridge type strip waveguides is about 1 dB/cm at 1310 nm, and the loss is higher; by utilizing a reactive ion etching technology, the roughness of the side wall of the waveguide is high, and the transmission loss of the waveguide is as high as 3-5 dB/cm; in addition, the chalcogenide glass optical waveguide is prepared by a stripping method, but the transmission loss of the prepared strip optical waveguide is as high as 2-6 dB/cm.
Based on the consideration, the invention designs a method for preparing low-loss As based on ultraviolet irradiation-annealing treatment20S80The chalcogenide glass tunnel optical waveguide method obviously improves the optical transmission performance of the waveguide, and the transmission loss of the waveguide can be as low as about 0.7 dB/cm.
Disclosure of Invention
The invention aims to meet the practical requirements and provide a method for preparing low-loss As20S80The chalcogenide glass tunnel optical waveguide is used to improve the optical transmission performance of the optical waveguide.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
preparation of low-loss As20S80The preparation method of the chalcogenide glass tunnel optical waveguide comprises the following steps:
s1, preparing As20S80Bulk glass and ground into powder;
s2, cleaning the glass substrate and adding As20S80The powder is used as an evaporation source and is vacuum thermally evaporated on a glass substrate to form a deposition stateAs20S80A film;
s3. in As20S80Placing a mask on the film, and irradiating by using ultraviolet light to form a tunnel optical waveguide structure;
s4, the As after irradiation20S80Annealing the tunnel optical waveguide, cooling to room temperature to obtain As20S80A tunnel optical waveguide;
s5, for the obtained As20S80And carrying out optical transmission performance test on the tunnel optical waveguide to detect the transmission loss of the tunnel optical waveguide.
Preparation of As As described in step S120S80The process of the bulk glass is as follows:
balancing the simple substance As and S according to the molar ratio of 1:4, sealing in a high-temperature electric furnace, heating to 800 ℃ at the heating speed of 1 ℃/min in a vacuum environment, keeping for 9-10 h, and naturally cooling to room temperature to obtain As20S80Bulk glass.
In step S2, the vacuum thermal evaporation is carried out on the glass substrate to form As-As-deposited20S80The film is prepared by the following vacuum thermal evaporation process:
as is20S80Putting the powder into an evaporation boat to serve as an evaporation source, and adjusting the distance between the evaporation source and the glass substrate to be between 12 and 20 cm and 10 DEG-3Controlling the deposition rate to be 9-10A/sec under the vacuum condition of Pa, and evaporating and plating on the glass substrate to form deposited As with the thickness of 1 mu m20S80And controlling the temperature of the glass substrate to be lower than 80 ℃ all the time in the evaporation process of the film.
As in step S320S80Placing a mask plate on the film, and irradiating by using ultraviolet light to form a tunnel optical waveguide structure specifically comprises the following steps:
placing a strip-shaped structure mask plate with the line width of 5 mu m in a deposition state As20S80On the film, the light intensity is 50-60 mW/cm2Irradiating the film with ultraviolet light with the wavelength of 300-430 nm for 70-90 minutes to enable the film illumination area to reach an illumination saturation state to form As20S80A tunnel optical waveguide structure.
The pair of irradiated As in step S420S80Annealing of tunnel optical waveguidesThe treatment and annealing process comprises the following steps: as is20S80The tunnel optical waveguide is placed in an annealing furnace, nitrogen is filled in the range of 130 +/-10 ℃ of glass transition temperature for annealing for 1h, and then the tunnel optical waveguide is naturally cooled to room temperature.
Pair of obtained As in step S520S80The tunnel optical waveguide is used for testing the optical transmission performance, and the As obtained by the measurement of the optical fiber-waveguide automatic coupling system20S80Transmission loss of tunnel optical waveguide:
selecting a semiconductor Light Emitting Diode (LED) with a central wavelength of 1310 nm As a light source, controlling polarized light entering the system by using two optical fiber polarization controllers and a polarizer with an extinction ratio larger than 35dB, and coupling light in and out of As by using a high-numerical-aperture optical fiber end face with a mode field diameter of 4.2 mu m20S80The tunnel optical waveguide is connected with the high-numerical-aperture optical fiber through an optical power meter to measure the optical power of the input end and the optical power of the output end of the waveguide respectively, and the insertion loss is obtained through the difference between the two optical powers;
the insertion loss of the whole waveguide is tested, then the waveguide is cut into different lengths by a glass cutter, the insertion loss of the waveguide is measured, the curve relation between the waveguide length and the insertion loss is drawn according to the measurement data, and the transmission loss of the waveguide is measured and calculated by calculating the slope of a fitting curve.
The ultraviolet light is irradiated, the light source is the ultraviolet light with the wavelength of 300-430 nm, and the unevenness of the light intensity in the illumination area needs to be controlled within 3 percent.
The simple As and S are sealed in a high-temperature electric furnace according to the mol ratio, and the purity of the used As and S is more than 99.99 percent.
The invention has the beneficial effects that:
1. the method of the invention forms As on the glass substrate by using a vapor deposition mode20S80Film and subjecting it to ultraviolet irradiation, As20S80The film forms a refractive index difference in the illumination area and the non-illumination area due to light-induced refractive index increase, so that a tunnel optical waveguide structure is formed, the integral preparation process is simple, and the cost is low;
2. the annealing treatment makes the refractive index of the non-illumination area all increase but still lower than that of the illumination area under the condition of ensuring that the refractive index of the original illumination area is unchanged. This not only preserves the waveguide structure, but also significantly reduces the transmission loss of the waveguide, and can effectively increase the transmission distance of the guided wave light.
3. The preparation process of the invention does not need to adopt chemical substances in the reactive ion etching or wet chemical etching technology, thereby avoiding the chalcogenide glass from being corroded by alkaline chemical substances and plasma gas, keeping the surface of the waveguide with good flatness and reducing the surface scattering loss.
4. Low-loss As prepared by the invention20S80The chalcogenide glass tunnel optical waveguide is the most key ring in the basis and application of chalcogenide glass integrated photonic devices, and has good application prospect.
Drawings
FIG. 1 shows a process for preparing low-loss As according to the present invention20S80A process flow diagram of a chalcogenide glass tunnel optical waveguide method;
FIG. 2 shows As-deposited according to the present invention20S80A refractive index change line graph of the thin film waveguide along with the ultraviolet light irradiation time;
FIG. 3 shows the light saturated As of the present invention20S80Schematic light transmission effect diagrams of the thin film waveguide before and after annealing;
FIG. 4 shows As obtained by the method of the present invention20S80A microscopic view of the tunnel optical waveguide;
FIG. 5 shows As obtained by the method of the present invention20S80A near field distribution diagram of the tunnel optical waveguide measured in a 1310 nm guided mode;
FIG. 6 shows the As test by the cut-off method in the example of the present invention20S80The insertion loss of the tunnel optical waveguide at a 1310 nm guided mode is fitted to a graph.
Detailed Description
In order to better explain the present invention, the detailed description of the present invention is made below with reference to the accompanying drawings and examples.
Example (b): see fig. 1-6.
Preparation of low-loss As20S80The preparation method of chalcogenide glass tunnel optical waveguide comprises the following steps：
S1, preparing As20S80Bulk glass and ground into powder;
s2, cleaning the glass substrate and adding As20S80The powder is used As an evaporation source and is vacuum thermally evaporated on a glass substrate to form As-deposited20S80A film;
s3. in As20S80Placing a mask on the film, and irradiating by using ultraviolet light to form a tunnel optical waveguide structure;
s4, the As after irradiation20S80Annealing the tunnel optical waveguide, cooling to room temperature to obtain As20S80A tunnel optical waveguide;
s5, for the obtained As20S80And carrying out optical transmission performance test on the tunnel optical waveguide to detect the transmission loss of the tunnel optical waveguide.
Said preparation of As20S80The process of the bulk glass is as follows:
balancing the simple substance As and S according to the molar ratio of 1:4, sealing in a high-temperature electric furnace, heating to 800 ℃ at the heating speed of 1 ℃/min in a vacuum environment, keeping for 9-10 h, and naturally cooling to room temperature to obtain As20S80Bulk glass.
The vacuum thermal evaporation is carried out on the glass substrate to form As-deposited20S80The film and the vacuum thermal evaporation process are as follows:
as is20S80Putting the powder into an evaporation boat to serve as an evaporation source, and adjusting the distance between the evaporation source and the glass substrate to be between 12 and 20 cm and 10 DEG-3Controlling the deposition rate to be 9-10A/sec under the vacuum condition of Pa, and evaporating and plating on the glass substrate to form deposited As with the thickness of 1 mu m20S80And controlling the temperature of the glass substrate to be lower than 80 ℃ all the time in the evaporation process of the film.
Said at As20S80Placing a mask plate on the film, and irradiating by using ultraviolet light to form a tunnel optical waveguide structure specifically comprises the following steps:
placing a strip-shaped structure mask plate with the line width of 5 mu m in a deposition state As20S80On the film, the light intensity is 50-60 mW/cm2Ultraviolet radiation 70 with wavelength of 300-430 nmThe film illumination area reaches an illumination saturation state within 90 minutes to form As20S80A tunnel optical waveguide structure.
The pair of As after irradiation20S80Annealing treatment is carried out on the tunnel optical waveguide, and the annealing process comprises the following steps: as is20S80The tunnel optical waveguide is placed in an annealing furnace, nitrogen is filled in the range of 130 +/-10 ℃ of glass transition temperature for annealing for 1h, and then the tunnel optical waveguide is naturally cooled to room temperature.
Said pair of obtained As20S80The tunnel optical waveguide is used for testing the optical transmission performance, and the As obtained by the measurement of the optical fiber-waveguide automatic coupling system20S80Transmission loss of tunnel optical waveguide:
selecting a semiconductor Light Emitting Diode (LED) with a central wavelength of 1310 nm As a light source, controlling polarized light entering the system by using two optical fiber polarization controllers and a polarizer with an extinction ratio larger than 35dB, and coupling light in and out of As by using a high-numerical-aperture optical fiber end face with a mode field diameter of 4.2 mu m20S80The tunnel optical waveguide is connected with the high-numerical-aperture optical fiber through an optical power meter to measure the optical power of the input end and the optical power of the output end of the waveguide respectively, and the insertion loss is obtained through the difference between the two optical powers;
the insertion loss of the whole waveguide is tested, then the waveguide is cut into different lengths by a glass cutter, the insertion loss of the waveguide is measured, the curve relation between the waveguide length and the insertion loss is drawn according to the measurement data, and the transmission loss of the waveguide is measured and calculated by calculating the slope of a fitting curve.
The ultraviolet light is irradiated, the light source is the ultraviolet light with the wavelength of 300-430 nm, and the unevenness of the light intensity in the illumination area needs to be controlled within 3 percent.
The simple As and S are sealed in a high-temperature electric furnace in a balanced way according to the molar ratio of 1:4, and the purity of the used As and S is more than 99.99 percent.
Example 1:
as shown in figure 1, simple substance As with purity of more than 99.99% and S are balanced according to molar ratio of 1:4, sealed in a high temperature electric furnace, heated to 800 deg.C at heating rate of 1 deg.C/min under vacuum environment, kept for 10 h, and naturally cooled to room temperature to obtain As20S80Lump glass is ground intoPowder, As obtained20S80The powder was put into an evaporation boat as an evaporation source, and the distance between the evaporation source and the glass substrate was adjusted to 12 cm at 10 in consideration of dissociation occurring during evaporation and different evaporation rates of the two substances-3The deposition rate is controlled at 10A/sec under the vacuum condition of Pa, and the glass substrate is evaporated to form deposited As with the thickness of 1 mu m20S80Controlling the temperature of the glass substrate to be lower than 80 ℃ all the time in the evaporation process of the film; placing a strip-shaped structure mask plate with the line width of 5 mu m in a deposition state As20S80On the film, the light intensity is 58mW/cm2And irradiating the film with ultraviolet light with the wavelength of 300-430 nm for 80 minutes to enable the film illumination area to reach an illumination saturation state to form the As20S80A tunnel optical waveguide structure; obtained As20S80Placing the tunnel optical waveguide in an annealing furnace, filling nitrogen for annealing at 130 ℃ for 1h, continuing filling nitrogen for naturally cooling to room temperature, and preparing low-loss As20S80A tunnel optical waveguide; after the annealing treatment, the original refractive index of the illuminated area is still basically maintained, the refractive index of the non-illuminated area is increased, but is lower than that of the illuminated area, and the tunnel optical waveguide structure is still maintained.
As As deposited As shown in FIG. 220S80The change rule of the refractive index of the film waveguide along with the ultraviolet irradiation time shows that20S80The refractive index of the film is increased after being irradiated by ultraviolet light, and is increased to a saturated state along with the prolonging of the illumination time, which means that the refractive index of an illumination area is higher than that of a non-illumination area after being irradiated by a mask plate, and a tunnel optical waveguide structure can be formed.
As shown in FIG. 3, light is saturated with As20S80In the test result of the optical transmission line of the film waveguide in the prism coupling system (the test wavelength is 632.8 nm), (a) is an optical transmission picture before annealing treatment, and the optical transmission line is about 3 cm; (b) the light transmission line of the light transmission picture after annealing at 130 ℃ is increased to 6.5 cm, and the As in the illumination saturated state is shown20S80After the thin film waveguide is annealed, the optical transmission performance of the thin film waveguide is remarkably improved.
As shown in fig. 4Is As20S80Microscopic photograph of a sample of tunnel optical waveguide, 10-2The difference in refractive index of an order of magnitude makes the tunneling light wave structure appear clearly under a microscope.
As shown in fig. 520S80The near-field optical field distribution of the tunnel optical waveguide in the transmission of the guided mode with the wavelength of 1310 nm, the central light spot light intensity of the near-field cross section of the waveguide presents single-mode Gaussian distribution, which shows that the light is strictly limited to be transmitted in the tunnel optical waveguide, and the tunnel optical waveguide has good transmission performance.
As shown in FIG. 6, the insertion loss of the tunnel optical waveguide having a line width of 5 μm measured by the truncation method was 1 cm, 4 cm and 5 cm, respectively, and the As was calculated by calculating the slope of the fitting line20S80The transmission loss of the tunnel optical waveguide at the 1310 nm guided mode is about 0.7 dB/cm.
In summary, compared with the prior art, the method has simple preparation process and low preparation cost, and the chalcogenide glass As prepared by the method of the invention20S80The light transmission performance of the tunnel light waveguide is remarkably improved, and the transmission loss is remarkably reduced compared with that of the light waveguide prepared by the traditional process.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and all equivalent structures or equivalent transformations made by the present specification and the attached drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. Preparation of low-loss As20S80The chalcogenide glass tunnel optical waveguide preparation method is characterized by comprising the following steps of:
s1, preparing As20S80Bulk glass and ground into powder;
s2, cleaning the glass substrate and adding As20S80The powder is used As an evaporation source and is vacuum thermally evaporated on a glass substrate to form As-deposited20S80A film;
s3. in As20S80On the filmPlacing a mask plate, and irradiating by using ultraviolet light to form a tunnel optical waveguide structure;
s4, the As after irradiation20S80Annealing the tunnel optical waveguide, cooling to room temperature to obtain As20S80A tunnel optical waveguide;
s5, for the obtained As20S80And carrying out optical transmission performance test on the tunnel optical waveguide to detect the transmission loss of the tunnel optical waveguide.
2. The method for preparing low-loss As in claim 120S80The chalcogenide glass tunnel optical waveguide manufacturing method is characterized in that the As is prepared in the step S120S80The process of the bulk glass is as follows:
balancing the simple substance As and S according to the molar ratio of 1:4, sealing in a high-temperature electric furnace, heating to 800 ℃ at the heating speed of 1 ℃/min in a vacuum environment, keeping for 9-10 h, and naturally cooling to room temperature to obtain As20S80Bulk glass.
3. The method for preparing low-loss As in claim 120S80The chalcogenide glass tunnel optical waveguide method is characterized in that the vacuum thermal evaporation is carried out on the glass substrate to form As-deposited in step S220S80The film and the vacuum thermal evaporation process are as follows:
as is20S80Putting the powder into an evaporation boat to serve as an evaporation source, and adjusting the distance between the evaporation source and the glass substrate to be between 12 and 20 cm and 10 DEG-3Controlling the deposition rate to be 9-10A/sec under the vacuum condition of Pa, and evaporating and plating on the glass substrate to form deposited As with the thickness of 1 mu m20S80And controlling the temperature of the glass substrate to be lower than 80 ℃ all the time in the evaporation process of the film.
4. The method for preparing low-loss As in claim 120S80The method for chalcogenide glass tunnel optical waveguide, characterized in that in step S3, As20S80Placing a mask on the film, and irradiating with ultraviolet light to form tunnel optical waveguide junctionThe structure specifically is as follows:
placing a strip-shaped structure mask plate with the line width of 5 mu m in a deposition state As20S80On the film, the light intensity is 50-60 mW/cm2Irradiating the film with ultraviolet light with the wavelength of 300-430 nm for 70-90 minutes to enable the film illumination area to reach an illumination saturation state to form As20S80A tunnel optical waveguide structure.
5. The method for preparing low-loss As in claim 120S80The method for chalcogenide glass tunnel optical waveguide is characterized in that the irradiated As is treated in step S420S80Annealing treatment is carried out on the tunnel optical waveguide, and the annealing process comprises the following steps: as is20S80The tunnel optical waveguide is placed in an annealing furnace, nitrogen is filled in the range of 130 +/-10 ℃ of glass transition temperature for annealing for 1h, and then the tunnel optical waveguide is naturally cooled to room temperature.
6. The method for preparing low-loss As in claim 120S80The method for chalcogenide glass tunnel optical waveguide is characterized in that the As obtained in step S520S80The tunnel optical waveguide is used for testing the optical transmission performance, and the As obtained by the measurement of the optical fiber-waveguide automatic coupling system20S80Transmission loss of tunnel optical waveguide:
selecting a semiconductor Light Emitting Diode (LED) with a central wavelength of 1310 nm As a light source, controlling polarized light entering the system by using two optical fiber polarization controllers and a polarizer with an extinction ratio larger than 35dB, and coupling light in and out of As by using a high-numerical-aperture optical fiber end face with a mode field diameter of 4.2 mu m20S80The tunnel optical waveguide is connected with the high-numerical-aperture optical fiber through an optical power meter to measure the optical power of the input end and the optical power of the output end of the waveguide respectively, and the insertion loss is obtained through the difference between the two optical powers;
the insertion loss of the whole waveguide is tested, then the waveguide is cut into different lengths by a glass cutter, the insertion loss of the waveguide is measured, the curve relation between the waveguide length and the insertion loss is drawn according to the measurement data, and the transmission loss of the waveguide is measured and calculated by calculating the slope of a fitting curve.
7. The method for preparing low-loss As according to claim 420S80The chalcogenide glass tunnel optical waveguide method is characterized in that ultraviolet light is irradiated, a light source is the ultraviolet light with the wavelength of 300-430 nm, and the light intensity unevenness in an illumination area needs to be controlled within 3 percent.
8. The method for preparing low-loss As according to claim 220S80The method for preparing chalcogenide glass tunnel optical waveguide is characterized by that the simple substance As and S are matched and sealed in high-temperature electric furnace according to mole ratio, and the purity of said As and S is above 99.99%.
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| CN1831573A (en) * | 2006-04-18 | 2006-09-13 | 上海理工大学 | Method for preparing As2S8 strip waveguide by optical excitation method |
| CN101206155A (en) * | 2006-12-21 | 2008-06-25 | 中国科学院半导体研究所 | Method and apparatus for measuring transmission loss of optical waveguide |
| CN105572795A (en) * | 2015-12-23 | 2016-05-11 | 吉林大学 | Polymer rectangular optical waveguide and micro-fluidic three-dimensional integrated chip and preparation method thereof |
| CN110727052A (en) * | 2019-08-29 | 2020-01-24 | 中山大学 | Preparation method of low-loss infrared high-nonlinearity optical waveguide |
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