CN112531066B - Photoelectric detector and use method thereof - Google Patents
Photoelectric detector and use method thereof Download PDFInfo
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- CN112531066B CN112531066B CN202011595658.3A CN202011595658A CN112531066B CN 112531066 B CN112531066 B CN 112531066B CN 202011595658 A CN202011595658 A CN 202011595658A CN 112531066 B CN112531066 B CN 112531066B
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 69
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 61
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 230000001902 propagating effect Effects 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The application discloses photoelectric detector and application method thereof relates to the field of optical communication integrated devices, and the photoelectric detector comprises: the incident waveguide is used for propagating signal light; the silicon layer is provided with a germanium absorption region which is used for detecting signal light and converting the signal light into an electric signal; the focusing device is used for focusing the signal light entering the waveguide to the silicon layer right below the germanium absorption region, and the width of the light beam converged when the signal light reaches the incident end of the germanium absorption region through the focusing device is larger than that of the germanium absorption region. The using method comprises the following steps: the signal light enters the focusing device from the incident waveguide; the focusing device focuses the signal light to a silicon layer right below the germanium absorption region, and the width of the focused light beam is larger than that of the germanium absorption region when the signal light reaches the incident end of the germanium absorption region; germanium absorption region converts signal light into the signal of telecommunication, and this application not only can improve photoelectric detector's saturated absorption power, can not appear signal distortion when making photoelectric conversion, still can improve the responsivity of device.
Description
Technical Field
The application relates to the field of optical communication integrated devices, in particular to a photoelectric detector and a using method thereof.
Background
At present, silicon-based photonic chips have the advantages of compatibility with standard semiconductor processes, low cost and high integration level, and are gradually and widely used in the industry. In the field of optical communication, a device adopted by a receiving end in a silicon optical chip integrated system is a waveguide type germanium-silicon photoelectric detector.
In the related art, the waveguide type germanium-silicon photoelectric detector adopts a square structure, light enters from one end and exits from the other corresponding end to undergo single-pass absorption. However, since the incident light power is rapidly reduced from the incident end to the exit end, under the condition of high-power incidence, the incident end is easy to generate saturated absorption, so that signal distortion occurs in photoelectric conversion, and meanwhile, the responsivity of the photoelectric detector is also reduced.
Disclosure of Invention
Aiming at one of the defects in the prior art, the present application aims to provide a photodetector and a method for using the same to solve the problems that the incident end of a waveguide type germanium-silicon photodetector in the related art is easy to generate saturation absorption, so that signal distortion occurs in photoelectric conversion and the responsivity is reduced.
The present application provides in a first aspect a photodetector comprising:
an incident waveguide for propagating the signal light;
a silicon layer on which a germanium absorption region is disposed, the germanium absorption region being configured to detect signal light and convert the signal light into an electrical signal;
and a focusing device for focusing the signal light incident to the waveguide to the silicon layer directly below the germanium absorption region, wherein the width of the light beam converged when the signal light reaches the incident end of the germanium absorption region via the focusing device is larger than that of the germanium absorption region.
In some embodiments, the focusing device is a multi-segment cascade waveguide, a narrow end of the multi-segment cascade waveguide is connected to the exit end of the incident waveguide, and a wide end of the multi-segment cascade waveguide is connected to the incident end of the silicon layer.
In some embodiments, the multi-segment cascaded waveguide is formed by connecting a plurality of segments of trapezoidal waveguides with different width change rates, and the width change rate of the multi-segment trapezoidal waveguide gradually decreases from the incident waveguide to the silicon layer.
In some embodiments, the multi-section cascaded waveguide includes a plurality of sections of trapezoidal waveguides and a section of straight waveguide connected in sequence, the width change rate of the multi-section trapezoidal waveguide gradually decreases from the incident waveguide to the silicon layer, and one end of the straight waveguide far from the trapezoidal waveguide is connected to the silicon layer.
In some embodiments, the focusing device is a non-uniform grating, the non-uniform grating is provided with a plurality of etching grooves, the etching grooves located in the middle of the non-uniform grating are used as centers, and the plurality of etching grooves are symmetrically distributed from the center to two sides.
In some embodiments, the width of the etching groove in a direction perpendicular to the incident direction of the signal light gradually increases from the center to both sides.
In some embodiments, the focusing device is a first lens structure, and the first lens structure is etched to form an annular etching groove.
In some embodiments, the focusing device is a second lens structure, the second lens structure includes a bottom layer and an upper layer disposed on an upper surface of the bottom layer, and a projection of the upper layer on the bottom layer is elliptical.
In some embodiments, the upper layer is formed on the upper surface of the bottom layer by etching or growing.
The second aspect of the present application provides a method for using the above-mentioned photodetector, which includes the steps of:
the signal light enters the focusing device from the incident waveguide;
the focusing device focuses the signal light to a silicon layer right below a germanium absorption region, and the width of the focused light beam is larger than that of the germanium absorption region when the signal light reaches the incident end of the germanium absorption region;
the germanium absorption region converts the signal light into an electrical signal.
The beneficial effect that technical scheme that this application provided brought includes:
according to the photoelectric detector and the using method thereof, the focusing device can focus the signal light of the incident waveguide to the silicon layer right below the germanium absorption region, the width of the converged light beam is larger than that of the germanium absorption region when the signal light reaches the incident end of the germanium absorption region through the focusing device, the power density of the light is lower than that of the light directly incident through the incident waveguide, so that the incident end of the germanium absorption region is difficult to reach a saturated absorption state, meanwhile, the focusing device forms the focused light beam, the light which is not incident into the germanium absorption region at the incident end of the germanium absorption region continues to propagate, enters the germanium absorption region at the side edge of the germanium absorption region, and equivalently, the receiving width of the incident end of the germanium absorption region is increased. Therefore, the saturation absorption power of the photoelectric detector can be improved, signal distortion can not occur during photoelectric conversion, and the responsivity of the device can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a photodetector according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a multi-segment cascaded waveguide according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a non-uniform grating in an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a first lens structure according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of a second lens structure in an embodiment of the present application;
FIG. 6 is a schematic cross-sectional view taken along line A-A of FIG. 5;
fig. 7 is a flow chart of a method of using a photodetector in an embodiment of the present application.
Reference numerals:
1. an incident waveguide; 2. a focusing device; 21. a multi-segment cascaded waveguide; 22. non-uniform grating; 23. a first lens structure; 24. a second lens structure; 241. a bottom layer; 242. an upper layer; 3. a silicon layer; 4. a germanium absorption region.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the application provides a photoelectric detector and a using method thereof, which can solve the problems that the incident end of a waveguide type germanium-silicon photoelectric detector in the related technology is easy to generate saturated absorption, so that the photoelectric conversion generates signal distortion and the responsivity is reduced.
As shown in fig. 1, the photodetector according to the embodiment of the present application includes an incident waveguide 1, a focusing device 2, a silicon layer 3, and a germanium absorption region 4. Wherein, the incident waveguide 1 is an incident silicon waveguide.
The above-described incident waveguide 1 is used to propagate signal light. The silicon layer 3 is provided with a germanium absorption region 4, and the germanium absorption region 4 is used for detecting signal light and converting the signal light into an electric signal. In this embodiment, the direction in which the signal light incident on the waveguide 1 is coupled into the silicon layer 3 is the longitudinal direction of the germanium absorption region 4.
The focusing device 2 is arranged between the incident waveguide 1 and the silicon layer 3, the focusing device 2 is used for focusing signal light incident on the waveguide 1 to the silicon layer 3 right below the germanium absorption region 4, and the width of the light beam converged when the signal light reaches the incident end of the germanium absorption region 4 through the focusing device 2 is larger than that of the germanium absorption region 4.
Wherein, along the direction of the signal light coupling into the silicon layer 3, the axes of the incident waveguide 1, the focusing device 2, the silicon layer 3 and the germanium absorption region 4 are in the same plane.
In the photodetector of this embodiment, the focusing device can focus the signal light incident on the waveguide to the silicon layer right below the germanium absorption region, and since the width of the light beam converged when the signal light reaches the incident end of the germanium absorption region through the focusing device is greater than the width of the germanium absorption region, and the power density of the light is lower than the power density of the light directly incident on the incident waveguide, the incident end of the germanium absorption region is not easily saturated and absorbed, and meanwhile, since the focusing device forms the focused light beam, the light that is not incident on the germanium absorption region at the incident end of the germanium absorption region will continue to propagate and enter the germanium absorption region at the side edge of the germanium absorption region, which is equivalent to increase the receiving width of the incident end of the germanium absorption region. Therefore, the photoelectric detector not only has higher saturation absorption power, so that signal distortion does not occur during photoelectric conversion, but also has higher responsivity.
In this embodiment, the projection plane of the germanium absorption region 4 on the silicon layer 3 is rectangular.
Preferably, the focusing device 2 is a multi-stage cascade waveguide 21, a narrow end of the multi-stage cascade waveguide 21 is connected to the exit end of the incident waveguide 1, and a wide end of the multi-stage cascade waveguide 21 is connected to the incident end of the silicon layer 3.
As shown in fig. 2, in the present embodiment, the multi-stage cascade waveguide 21 is formed by connecting a plurality of trapezoidal waveguides having different width change rates.
Preferably, the width change rate of the multi-segment trapezoidal waveguide gradually decreases from the incident waveguide 1 to the silicon layer 3. Wherein, the width of the multi-section cascade trapezoidal waveguide formed by the multi-section trapezoidal waveguide is gradually widened from being not less than the width of the incident waveguide 1.
In other embodiments, the multi-segment cascaded waveguide 21 includes a plurality of trapezoidal waveguides and a straight waveguide connected in sequence, the width change rate of the multi-segment trapezoidal waveguide gradually decreases from the incident waveguide 1 to the silicon layer 3, and one end of the straight waveguide far from the trapezoidal waveguide is connected to the silicon layer 3.
In other embodiments, the multi-segment cascaded waveguide 21 may further include a plurality of segments of first waveguides and at least one segment of second waveguides, which are sequentially connected, where the plurality of segments of first waveguides are trapezoidal waveguides whose width change rates gradually decrease from the incident waveguide 1 to the silicon layer 3, and the second waveguides are trapezoidal waveguides whose widths gradually decrease from the incident waveguide 1 to the silicon layer 3.
Therefore, the multi-segment cascaded waveguide 21 of the present embodiment is gradually widened or constant or gradually narrowed in width near the exit end.
As shown in fig. 3, preferably, the focusing device 2 is a non-uniform grating 22, and a plurality of etching grooves are formed in the non-uniform grating 22, and are distributed symmetrically from the center to two sides, with the etching groove located in the middle of the non-uniform grating as a center. In this embodiment, the width of the etching groove in the direction perpendicular to the incident direction of the signal light gradually increases from the center to both sides.
In other embodiments, the focusing device 2 may also adopt a lens structure. The lens structure may be formed by etching or growth.
As shown in fig. 4, the focusing device 2 is optionally a first lens structure 23, and the first lens structure 23 is formed with an annular etching groove by etching.
As shown in fig. 5 and 6, the focusing device 2 is optionally a second lens structure 24, and the second lens structure 24 includes a bottom layer 241 and an upper layer 242 on the upper surface of the bottom layer 241. The projection of the upper layer 242 on the bottom layer 241 is elliptical.
In this embodiment, the upper layer 242 is formed on the upper surface of the bottom layer 241 by etching or growing.
Alternatively, the upper layer 242 is formed on the lower layer 241 by growth, the lower layer 241 is a growth base layer, and the upper layer 242 is a silicon layer epitaxially grown on the upper surface of the growth base layer.
In other embodiments, the upper layer 242 is formed on the upper surface of the bottom layer 241 by etching, and the material of the upper layer 242 may be the same as or different from that of the bottom layer 241.
As shown in fig. 7, the method for using the photodetector according to this embodiment includes the steps of:
s1, signal light enters a focusing device 2 from an incident waveguide 1.
S2, focusing the signal light to a silicon layer 3 right below the germanium absorption region 4 by the focusing device 2, and enabling the width of the converged light beam to be larger than that of the germanium absorption region 4 when the signal light reaches the incident end of the germanium absorption region 4.
And S3, converting the signal light into an electric signal by the germanium absorption region 4.
The use method of the embodiment is suitable for each photoelectric detector, the focusing device is arranged between the incident waveguide and the silicon layer below the germanium absorption region, and the light beams are converged towards the germanium absorption region through the focusing device, so that the contact surface between the germanium absorption region and the incident light of the incident waveguide is increased, the saturated light power is improved, and the signal distortion caused by overlarge incident light power is avoided.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Those not described in detail in this specification are within the skill of the art.
Claims (2)
1. A photodetector, characterized in that it comprises:
an incident waveguide (1) for propagating signal light;
the silicon layer (3) is provided with a germanium absorption region (4), and the germanium absorption region (4) is used for detecting signal light and converting the signal light into an electric signal;
a focusing device (2) for focusing the signal light of the incident waveguide (1) to the silicon layer (3) right below the germanium absorption region (4), wherein the width of the light beam converged when the signal light passes through the focusing device (2) to reach the incident end of the germanium absorption region (4) is larger than that of the germanium absorption region (4);
when the focusing device (2) is an uneven grating (22), a plurality of etching grooves are formed in the uneven grating (22), the etching grooves in the middle of the uneven grating are used as centers, and the plurality of etching grooves are symmetrically distributed from the center to two sides; the width of the etching groove in the direction vertical to the incidence direction of the signal light is gradually increased from the center to two sides;
when the focusing device (2) is a first lens structure (23), an annular etching groove is formed on the first lens structure (23) through etching.
2. A method for using the photodetector according to claim 1, comprising the steps of:
the signal light enters a focusing device (2) from an incident waveguide (1);
the focusing device (2) focuses the signal light to a silicon layer (3) right below a germanium absorption region (4), and the width of the focused light beam is larger than that of the germanium absorption region (4) when the signal light reaches the incident end of the germanium absorption region (4);
the germanium absorption region (4) converts the signal light into an electrical signal.
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| CN117836589A (en) * | 2021-11-03 | 2024-04-05 | 华为技术有限公司 | Chip, photoelectric conversion device, optical module, and optical communication system |
| CN115528128B (en) * | 2022-11-24 | 2024-04-12 | 季华实验室 | Single photon avalanche diode and preparation method thereof |
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| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
| CN104157945A (en) * | 2014-08-14 | 2014-11-19 | 东南大学 | Metamaterial-based graded-refractive-index slab focusing lens |
| CN210006746U (en) * | 2019-07-25 | 2020-01-31 | 上海新微技术研发中心有限公司 | Waveguide type germanium-based photoelectric detector |
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| US10305248B2 (en) * | 2013-10-29 | 2019-05-28 | Hewlett Packard Enterprise Development Lp | High contrast grating optoelectronics |
| CN106415954A (en) * | 2014-04-07 | 2017-02-15 | 丹麦技术大学 | Vcsel structure |
| US10718906B2 (en) * | 2018-12-28 | 2020-07-21 | Intel Corporation | Optical device using waveguide segments tapered according to a non-linear function |
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|---|---|---|---|---|
| CN102694055A (en) * | 2011-03-20 | 2012-09-26 | 富士通株式会社 | Light receiving element, light receiving device, and light receiving module |
| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
| CN104157945A (en) * | 2014-08-14 | 2014-11-19 | 东南大学 | Metamaterial-based graded-refractive-index slab focusing lens |
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