CN112520698A - Reduction tail gas recovery system and process suitable for polycrystalline silicon production - Google Patents
Reduction tail gas recovery system and process suitable for polycrystalline silicon production Download PDFInfo
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- CN112520698A CN112520698A CN202011422015.9A CN202011422015A CN112520698A CN 112520698 A CN112520698 A CN 112520698A CN 202011422015 A CN202011422015 A CN 202011422015A CN 112520698 A CN112520698 A CN 112520698A
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- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/50—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
- C01B3/52—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with liquids; Regeneration of used liquids
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- C—CHEMISTRY; METALLURGY
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- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
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Abstract
The invention discloses a reduction tail gas recovery system and a process suitable for polycrystalline silicon production, and belongs to the technical field of polycrystalline silicon production.
Description
Technical Field
The invention belongs to the technical field of polycrystalline silicon production, and particularly relates to a reduction tail gas recovery system and process suitable for polycrystalline silicon production.
Background
An improved Siemens method is adopted in the existing polycrystalline silicon production, the principle is that a gas-phase precipitation method H2+ SIHCL3 is SI +3HCL, the conversion rate in a reduction furnace is extremely low, a large number of byproducts are generated, reduction tail gas needs to be recycled, the existing tail gas recycling chlorosilane mixed liquid absorbs hydrogen chloride in hydrogen and then enters a hydrogen chloride analytical tower for separation, and the method is excessive in associated equipment, easy to cause leakage and pollute the environment, poor in absorption effect, large in energy consumption and large in investment cost.
The existing process flow is to send chlorosilane rich liquid which has absorbed hydrogen chloride to a hydrogen chloride analysis tower to analyze the hydrogen chloride and then return the chlorosilane rich liquid to the top of the absorption tower to absorb the hydrogen chloride, the process increases the steam and electricity consumption of a system, increases the equipment investment and maintenance cost of a tail gas recovery device, and aims at the defects, the process route of reducing tail gas separation in the production process of polycrystalline silicon needs to be optimized.
Disclosure of Invention
In view of the above, in order to solve the above problems in the prior art, the present invention aims to provide a system and a process for recovering reduced tail gas in polysilicon production, so as to achieve the purposes of reducing the investment in recovering steam from tail gas in the polysilicon production process, reducing the investment in recovering electricity consumption from tail gas in the polysilicon production process, and reducing the investment in heat exchange equipment and tower and tank equipment of a tail gas recovery device in the polysilicon production process.
The technical scheme adopted by the invention is as follows: a recovery system for a reduction tail gas suitable for use in the production of polycrystalline silicon, the recovery system comprising:
a hydrogen chloride absorption tower;
the tail gas pretreatment equipment set is respectively communicated with the gas inlet and the gas outlet of the hydrogen chloride absorption tower;
the heat exchange equipment set is communicated with the liquid inlet and the liquid outlet of the hydrogen chloride absorption tower respectively, the heat exchange equipment set is communicated with the cold hydrogenation reactor, and the heat exchange equipment set is communicated with the rectification process equipment for directly supplying high-purity absorption liquid to the heat exchange equipment set.
Furthermore, high-purity silicon tetrachloride is adopted as the high-purity absorption liquid, the high-purity silicon tetrachloride is supplied by the rectification process equipment, the high-purity silicon tetrachloride is adopted as the absorption liquid, the absorption liquid does not contain hydrogen chloride, and the effect of absorbing the hydrogen chloride by the tested silicon tetrachloride is superior to the mixed liquid of dichlorosilane, trichlorosilane and silicon tetrachloride, the effect of separating the hydrogen is better, and the quality of recovering the hydrogen is improved due to the better absorption effect.
Further, the tail gas pretreatment equipment set comprises:
the inlet I of the air inlet heat exchanger is communicated with a hydrogen compressor for supplying tail gas to the air inlet heat exchanger, and the inlet II of the air inlet heat exchanger is communicated with the air outlet of the hydrogen chloride absorption tower;
and the outlet of the air inlet Freon heat exchanger is communicated with an air inlet of the hydrogen chloride absorption tower.
Further, the heat exchange equipment set comprises:
the first-stage chlorosilane heat exchanger is communicated with the liquid outlet of the hydrogen chloride absorption tower through an inlet I, and the second-stage chlorosilane heat exchanger is communicated with the rectification process equipment through an inlet II;
the first inlet of the second chlorosilane heat exchanger is communicated to the second outlet of the first chlorosilane heat exchanger, the second inlet of the second chlorosilane heat exchanger is communicated to the first outlet of the first chlorosilane heat exchanger, and the second outlet of the second chlorosilane heat exchanger is communicated to the cold hydrogenation reactor;
the inlet of the liquid inlet Freon heat exchanger is communicated with the outlet I of the secondary chlorosilane heat exchanger, and the outlet of the liquid inlet Freon heat exchanger is communicated with the liquid inlet of the hydrogen chloride absorption tower;
to optimize the hydrogen chloride absorption column and associated heat exchangers.
The invention also provides a reduction tail gas recovery process suitable for polycrystalline silicon production, which comprises the following steps:
s1: supplying the reduction tail gas to be recovered to a hydrogen chloride absorption tower;
s2: directly supplied high-purity absorption liquid is subjected to a heat exchange process and then enters a hydrogen chloride absorption tower to absorb hydrogen chloride;
s3: the chlorosilane rich liquid generated after the hydrogen chloride absorption tower absorbs the hydrogen chloride is extracted to a cold hydrogenation reaction process after a heat exchange process, so that the cold energy of the material extracted by the hydrogen chloride absorption tower is better utilized, the waste of the cold energy is avoided, and the electricity consumption is saved.
Furthermore, the high-purity absorption liquid is high-purity silicon tetrachloride which is directly supplied by a rectification process, the high-purity silicon tetrachloride is used as the absorption liquid, the absorption liquid does not contain hydrogen chloride, and the effect of the silicon tetrachloride for absorbing the hydrogen chloride is better than that of a mixed liquid of dichlorosilane, trichlorosilane and silicon tetrachloride through tests, the effect of separating the hydrogen is better, and the quality of the recovered hydrogen is improved due to the better absorption effect.
Further, the to-be-recovered reduction tail gas is supplied to an air inlet of the air inlet heat exchanger through the hydrogen compressor, outlet gas of the air inlet heat exchanger is sent into an air inlet of the hydrogen chloride absorption tower after being subjected to heat exchange through the air inlet Freon heat exchanger, and an air outlet of the hydrogen chloride absorption tower is communicated to the other air inlet of the air inlet heat exchanger.
Further, the heat exchange process comprises the following steps:
the high-purity absorption liquid is subjected to primary heat exchange with chlorosilane rich liquid extracted from a hydrogen chloride absorption tower through a primary chlorosilane heat exchanger;
the chlorosilane rich solution after the primary heat exchange passes through a secondary chlorosilane heat exchanger and performs secondary heat exchange on the high-purity absorption liquid, and the chlorosilane rich solution is pumped out to a cold hydrogenation reaction process through the secondary chlorosilane heat exchanger;
the high-purity absorption liquid after the secondary heat exchange carries out tertiary heat exchange through a liquid inlet Freon heat exchanger;
and the high-purity absorption liquid after the three-stage heat exchange enters a hydrogen chloride absorption tower to absorb hydrogen chloride gas in the hydrogen.
The invention has the beneficial effects that:
1. by adopting the system and the process for recovering the reduction tail gas suitable for polysilicon production, provided by the invention, high-purity silicon tetrachloride is directly supplied to a primary chlorosilane heat exchanger to exchange heat with rich liquid chlorosilane absorbed hydrogen chloride and extracted from a hydrogen chloride absorption tower, and after the heat exchange of the rich liquid chlorosilane subjected to the heat exchange of the primary chlorosilane heat exchanger is carried out through a secondary chlorosilane heat exchanger and an absorption tower kettle, the rich liquid chlorosilane enters a liquid-feeding Freon heat exchanger to exchange heat, and then a hydrogen chloride absorption tower absorbs hydrogen chloride gas in the hydrogen, so that equipment investment of a desorption tower, a desorption tower feeding heat exchanger, a desorption tower kettle cooler, a desorption tower reboiler, a cooler in the desorption tower, a desorption tower top cooler, a desorption tower reflux tank and the like of a traditional polysilicon tail gas recovery device can be saved, and meanwhile, equipment maintenance cost is saved; meanwhile, the desorption tower is optimized, so that the cold energy of the material recovered by the secondary chlorosilane cooler is saved, the load of a refrigerating unit is reduced, and the electricity consumption is saved; in addition, the optimization of the desorption tower reduces the steam consumption required by the prior process for separating the hydrogen chloride in the chlorosilane.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a recovery system of the reduction tail gas suitable for polysilicon production according to the present invention;
the drawings are labeled as follows:
the system comprises a gas inlet heat exchanger 1, a gas inlet Freon heat exchanger 2, a hydrogen chloride absorption tower 3, a liquid inlet Freon heat exchanger 4, a secondary chlorosilane heat exchanger 5, a primary chlorosilane heat exchanger 6, a tail gas supply end 7, a cold hydrogenation reaction end 8 and a high-purity silicon tetrachloride supply end 9.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the indication of the orientation or the positional relationship is based on the orientation or the positional relationship shown in the drawings, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, or the orientation or the positional relationship which is usually understood by those skilled in the art, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, and is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, cannot be understood as limiting the present invention. Furthermore, the terms "first" and "second" are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be further noted that the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases by those skilled in the art; the drawings in the embodiments are used for clearly and completely describing the technical scheme in the embodiments of the invention, and obviously, the described embodiments are a part of the embodiments of the invention, but not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Example 1
As shown in fig. 1, the present embodiment specifically provides a recovery system of reduction tail gas suitable for polysilicon production, and aims to optimize a process route of separation of reduction tail gas in the polysilicon production process by using the recovery system of reduction tail gas. The specific design is as follows: the recovery system comprises a hydrogen chloride absorption tower, a tail gas pretreatment equipment set and a heat exchange equipment set, and is specifically designed as follows:
absorbing tower of hydrogen chloride
The hydrogen chloride absorption tower is used for absorbing hydrogen chloride and is provided with an air inlet, an air outlet, a liquid inlet and a liquid outlet.
② tail gas pretreatment equipment set
The tail gas pretreatment equipment set is respectively communicated with the gas inlet and the gas outlet of the hydrogen chloride absorption tower so as to carry the reduction tail gas to the interior of the hydrogen chloride absorption tower after pretreatment. Preferably, the tail gas pretreatment equipment set comprises: the device comprises an air inlet heat exchanger and an air inlet Freon heat exchanger, wherein an inlet I of the air inlet heat exchanger is communicated with a hydrogen compressor for supplying reduction tail gas to the air inlet heat exchanger, and an inlet II of the air inlet heat exchanger is communicated with an air outlet of a hydrogen chloride absorption tower;
and the inlet of the air inlet Freon heat exchanger is communicated with the outlet of the air inlet heat exchanger, and the outlet of the air inlet Freon heat exchanger is communicated with the air inlet of the hydrogen chloride absorption tower, so that the recycled reduction tail gas is continuously conveyed to the hydrogen chloride absorption tower.
Thirdly heat exchange equipment group
Communicate between inlet and the liquid outlet with the hydrogen chloride absorption tower respectively with the heat transfer equipment group, heat transfer equipment group intercommunication has cold hydrogenation reactor and heat transfer equipment group intercommunication to have the rectification process equipment of directly supplying high-purity absorption liquid to it, wherein, high-purity absorption liquid adopts high-purity silicon tetrachloride, high-purity silicon tetrachloride by the supply of rectification process equipment adopts high-purity silicon tetrachloride as the absorption liquid, does not contain the hydrogen chloride in this absorption liquid and through experimental silicon tetrachloride absorb the mixed liquid that the effect of hydrogen chloride is superior to dichlorosilane, trichlorosilane, silicon tetrachloride, and the effect of separating out hydrogen is better, because the absorption effect is better, has promoted the quality of retrieving hydrogen.
The heat exchange equipment group includes: first order chlorosilane heat exchanger, second grade chlorosilane heat exchanger and feed liquor freon heat exchanger specifically as follows:
an inlet I of the primary chlorosilane heat exchanger is communicated with a liquid outlet of the hydrogen chloride absorption tower, and a chlorosilane rich liquid generated after hydrogen chloride is absorbed enters the primary chlorosilane heat exchanger for heat exchange, so that the cold energy of materials recovered by the hydrogen chloride absorption tower is better utilized, the waste of the cold energy is avoided, and the electricity consumption is saved; meanwhile, an inlet II of the first-stage chlorosilane heat exchanger is communicated to rectification process equipment, and high-purity silicon tetrachloride is directly supplied to the first-stage chlorosilane heat exchanger through the rectification process equipment.
An inlet I of the second-stage chlorosilane heat exchanger is communicated to an outlet II of the first-stage chlorosilane heat exchanger, an inlet II of the second-stage chlorosilane heat exchanger is communicated to an outlet I of the first-stage chlorosilane heat exchanger, an outlet II of the second-stage chlorosilane heat exchanger is communicated to the cold hydrogenation reactor, and high-purity silicon tetrachloride after hydrogen chloride is absorbed through the cold hydrogenation reactor to participate in the reaction.
The inlet of the liquid inlet Freon heat exchanger is communicated with the I outlet of the second-stage chlorosilane heat exchanger, and the outlet of the liquid inlet Freon heat exchanger is communicated with the liquid inlet of the hydrogen chloride absorption tower.
The reduction tail gas recovery system that provides in this embodiment, it advances one-level chlorosilane heat exchanger from the barren liquor chlorosilane of analytic tower cauldron heat exchanger ejection of compact in original system and changes into directly supplying high-purity silicon tetrachloride to one-level chlorosilane heat exchanger by the rectification process, and the hydrogen chloride absorption tower absorbs the hydrogen chloride through the hydrogen chloride absorption tower after entering into feed liquor freon heat exchanger through second grade chlorosilane heat exchanger, hydrogen chloride absorption tower, and the absorption is accomplished and is advanced one-level chlorosilane heat exchanger, second grade chlorosilane heat exchanger in proper order, and finally the taking out to the cold hydrogenation reactor and participates in the reaction.
The hydrogen chloride absorption tower and the associated heat exchanger are optimized, the steam consumption of a reboiler of the desorption tower kettle is saved, the equipment investment cost and the later maintenance cost are saved, the risk of environmental pollution caused by equipment leakage is reduced, meanwhile, the equipment required to be operated is reduced, the operation control is simpler and more convenient, and the possibility of misoperation is reduced.
Example 2
On the basis of the reduction tail gas recovery system who is applicable to polycrystalline silicon production that embodiment 1 provided, still provide a reduction tail gas recovery technology suitable for polycrystalline silicon production in this embodiment, the reduction tail gas recovery technology who is applicable to polycrystalline silicon production that this embodiment provided, by the rectification process directly supply high-purity silicon tetrachloride to the chlorosilane rich liquid exchange heat of having absorbed the hydrogen chloride of taking with the hydrogen chloride absorption tower cauldron behind the first-order chlorosilane heat exchanger, through second-order chlorosilane heat exchanger and the rich liquid chlorosilane heat transfer that accomplishes through the heat transfer of first-order chlorosilane heat exchanger, after getting into liquid freon heat exchanger heat transfer, the hydrogen chloride gas in the hydrogen absorption tower absorption hydrogen of entering. The recovery process specifically comprises the following steps:
s1: supplying the reduction tail gas to be recovered to a hydrogen chloride absorption tower, specifically, supplying the reduction tail gas to be recovered to an air inlet of an air inlet heat exchanger through a hydrogen compressor, sending outlet gas of the air inlet heat exchanger into the air inlet of the hydrogen chloride absorption tower after heat exchange of the air inlet freon heat exchanger, and communicating an air outlet of the hydrogen chloride absorption tower to the other air inlet of the air inlet heat exchanger so as to continuously supply the reduction tail gas to the hydrogen chloride absorption tower.
S2: directly supplied high-purity absorption liquid is subjected to a heat exchange process and then enters a hydrogen chloride absorption tower to absorb hydrogen chloride; the high-purity absorption liquid is high-purity silicon tetrachloride which is directly supplied by a rectification process and is used as the absorption liquid, the absorption liquid does not contain hydrogen chloride, and experiments show that the effect of the silicon tetrachloride for absorbing the hydrogen chloride is better than that of the mixed liquid of dichlorosilane, trichlorosilane and silicon tetrachloride, the effect of separating the hydrogen is better, and the quality of the recovered hydrogen is improved due to the better absorption effect.
S3: and (3) after the hydrogen chloride absorption tower absorbs the hydrogen chloride, generating chlorosilane rich liquid, and extracting the chlorosilane rich liquid to a cold hydrogenation reaction process after a heat exchange process.
In the above, the heat exchange step is:
(a) the high-purity silicon tetrachloride exchanges heat with chlorosilane rich liquid extracted from a hydrogen chloride absorption tower through a first-stage chlorosilane heat exchanger in a first-stage mode, and the heat exchange is carried out through the first-stage heat exchange;
(b) the chlorosilane rich solution after the primary heat exchange passes through a secondary chlorosilane heat exchanger and performs secondary heat exchange on high-purity silicon tetrachloride flowing into the secondary chlorosilane heat exchanger, the heat exchange is performed again through the secondary heat exchange, and the chlorosilane rich solution is extracted to a cold hydrogenation reaction process through the secondary chlorosilane heat exchanger;
(c) the high-purity silicon tetrachloride after the secondary heat exchange carries out tertiary heat exchange through a liquid inlet Freon heat exchanger, and the tertiary heat exchange continues to carry out heat exchange;
(d) the high-purity silicon tetrachloride after the tertiary heat exchange enters a hydrogen chloride absorption tower to absorb hydrogen chloride gas in hydrogen, and a chlorosilane rich solution generated after the hydrogen chloride is absorbed enters a primary chlorosilane heat exchanger to carry out heat exchange, so that the cold energy of materials extracted by the hydrogen chloride absorption tower is better utilized, the waste of the cold energy is avoided, and the electricity consumption is saved.
On the basis of the recovery process of the reduction tail gas suitable for polysilicon production, compared with the traditional recovery process of the reduction tail gas, the investment on equipment such as a desorption tower, a desorption tower feeding heat exchanger, a desorption tower kettle cooler, a desorption tower reboiler, a cooler in the desorption tower, a desorption tower top cooler, a desorption tower reflux tank and the like of a polysilicon tail gas recovery device is saved, and the maintenance cost of the equipment is saved; meanwhile, the desorption tower is optimized, so that the cold energy of the material recovered by the secondary chlorosilane cooler is saved, the load of a refrigerating unit is reduced, and the electricity consumption is saved; in addition, the optimization of the desorption tower reduces the steam consumption required by the prior process for separating the hydrogen chloride in the chlorosilane.
The invention is not limited to the above alternative embodiments, and any other various forms of products can be obtained by anyone in the light of the present invention, but any changes in shape or structure thereof, which fall within the scope of the present invention as defined in the claims, fall within the scope of the present invention.
Claims (8)
1. A recovery system of reduction tail gas suitable for polysilicon production is characterized by comprising:
a hydrogen chloride absorption tower;
the tail gas pretreatment equipment set is respectively communicated with the gas inlet and the gas outlet of the hydrogen chloride absorption tower;
the heat exchange equipment set is communicated with the liquid inlet and the liquid outlet of the hydrogen chloride absorption tower respectively, the heat exchange equipment set is communicated with the cold hydrogenation reactor, and the heat exchange equipment set is communicated with the rectification process equipment for directly supplying high-purity absorption liquid to the heat exchange equipment set.
2. The system for recovering the reduction tail gas suitable for the production of the polycrystalline silicon, as recited in claim 1, wherein the high-purity absorption liquid is high-purity silicon tetrachloride supplied by the rectification process equipment.
3. The recovery system of the reducing tail gas suitable for the production of polysilicon according to claim 1, wherein the tail gas pretreatment equipment set comprises:
the inlet I of the air inlet heat exchanger is communicated with a hydrogen compressor for supplying tail gas to the air inlet heat exchanger, and the inlet II of the air inlet heat exchanger is communicated with the air outlet of the hydrogen chloride absorption tower;
and the outlet of the air inlet Freon heat exchanger is communicated with an air inlet of the hydrogen chloride absorption tower.
4. The recovery system for the reduction tail gas suitable for the production of polysilicon according to claim 1, wherein the heat exchange device group comprises:
the first-stage chlorosilane heat exchanger is communicated with the liquid outlet of the hydrogen chloride absorption tower through an inlet I, and the second-stage chlorosilane heat exchanger is communicated with the rectification process equipment through an inlet II;
the first inlet of the second chlorosilane heat exchanger is communicated to the second outlet of the first chlorosilane heat exchanger, the second inlet of the second chlorosilane heat exchanger is communicated to the first outlet of the first chlorosilane heat exchanger, and the second outlet of the second chlorosilane heat exchanger is communicated to the cold hydrogenation reactor;
and the inlet of the liquid inlet Freon heat exchanger is communicated with the I outlet of the secondary chlorosilane heat exchanger, and the outlet of the liquid inlet Freon heat exchanger is communicated with the liquid inlet of the hydrogen chloride absorption tower.
5. A recovery process of reduction tail gas suitable for polysilicon production is characterized by comprising the following steps:
s1: supplying the reduction tail gas to be recovered to a hydrogen chloride absorption tower;
s2: directly supplied high-purity absorption liquid is subjected to a heat exchange process and then enters a hydrogen chloride absorption tower to absorb hydrogen chloride;
s3: and (3) after the hydrogen chloride absorption tower absorbs the hydrogen chloride, generating chlorosilane rich liquid, and extracting the chlorosilane rich liquid to a cold hydrogenation reaction process after a heat exchange process.
6. The recovery process of the reduction tail gas suitable for the production of polysilicon according to claim 5, wherein the high-purity absorption liquid is high-purity silicon tetrachloride which is directly supplied by a rectification process.
7. The recovery process of the reducing tail gas suitable for polysilicon production according to claim 5, wherein the reducing tail gas to be recovered is supplied to an air inlet of an air inlet heat exchanger through a hydrogen compressor, the outlet gas of the air inlet heat exchanger is sent to an air inlet of a hydrogen chloride absorption tower after being subjected to heat exchange through an air inlet Freon heat exchanger, and an air outlet of the hydrogen chloride absorption tower is communicated to the other air inlet of the air inlet heat exchanger.
8. The recovery process of the reduction tail gas suitable for the production of polycrystalline silicon according to claim 5, wherein the heat exchange process comprises the following steps:
the high-purity absorption liquid is subjected to primary heat exchange with chlorosilane rich liquid extracted from a hydrogen chloride absorption tower through a primary chlorosilane heat exchanger;
the chlorosilane rich solution after the primary heat exchange passes through a secondary chlorosilane heat exchanger and performs secondary heat exchange on the high-purity absorption liquid, and the chlorosilane rich solution is pumped out to a cold hydrogenation reaction process through the secondary chlorosilane heat exchanger;
the high-purity absorption liquid after the secondary heat exchange carries out tertiary heat exchange through a liquid inlet Freon heat exchanger;
and the high-purity absorption liquid after the three-stage heat exchange enters a hydrogen chloride absorption tower to absorb hydrogen chloride gas in the hydrogen.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107352510A (en) * | 2016-05-09 | 2017-11-17 | 新特能源股份有限公司 | Polycrystalline silicon reduction exhaust recovery method and recovery system |
| CN110240165A (en) * | 2018-03-07 | 2019-09-17 | 新特能源股份有限公司 | The recovery method and recyclable device of dichlorosilane in polycrystalline silicon reduction exhaust |
-
2020
- 2020-12-08 CN CN202011422015.9A patent/CN112520698A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107352510A (en) * | 2016-05-09 | 2017-11-17 | 新特能源股份有限公司 | Polycrystalline silicon reduction exhaust recovery method and recovery system |
| CN110240165A (en) * | 2018-03-07 | 2019-09-17 | 新特能源股份有限公司 | The recovery method and recyclable device of dichlorosilane in polycrystalline silicon reduction exhaust |
Non-Patent Citations (1)
| Title |
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| 沈文忠 主编: "《太阳能光伏技术与应用》", 31 October 2013, 上海：上海交通大学出版社 * |
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Application publication date: 20210319 |