CN112500802A - Plasma polishing agent and preparation method and application thereof - Google Patents
Plasma polishing agent and preparation method and application thereof Download PDFInfo
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- CN112500802A CN112500802A CN202011551920.4A CN202011551920A CN112500802A CN 112500802 A CN112500802 A CN 112500802A CN 202011551920 A CN202011551920 A CN 202011551920A CN 112500802 A CN112500802 A CN 112500802A
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- polishing
- plasma
- polishing agent
- plasma polishing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
Abstract
The invention relates to the technical field of metal processing, and the plasma polishing agent comprises the following components: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate and 0.01-1% of glucose. The plasma polishing agent can be prepared into plasma polishing powder or plasma polishing liquid, can effectively remove burrs of a workpiece after casting or metal printing, can remove 30%, has durability enhanced by 30% compared with the existing formula, enhances the glossiness and smoothness of the workpiece by 20%, has a pH value of 7-7.5, is close to neutrality, is beneficial to treatment of subsequently discharged sewage, and effectively enhances the environmental protection problem. The invention also provides a preparation method and a using method of the plasma polishing powder. The polishing agent can be used for polishing a workpiece in one step without secondary processing.
Description
Technical Field
The invention relates to the technical field of metal processing, in particular to a plasma polishing agent and a preparation method and application thereof.
Background
In the plasma polishing, under the condition that a polishing agent exists, an atom nucleus losing electrons forms a positively charged ion, when the ion reaches a certain amount, the ion can be in a plasma state, the energy of the plasma state is large, and when the plasma rubs with an object to be polished, the object can achieve the effect of surface brightness at a moment. Plasma nano polishing is a brand new metal surface treatment process, only reacts with plasma on a molecular layer on the surface of a workpiece, and is widely applied to industries of medical instruments, jewelry, hardware finished products and the like.
The basic materials of the existing plasma polishing agent are mainly sulfate, organic acid and water. The existing plasma polishing agent has insufficient durability, organic acid can generate residual substances in the electrolytic process and can be collected in an electrolytic tank in different degrees, so that the current efficiency in the electrolytic process is influenced, the stability and the durability of the polishing agent are reduced, the polishing effect is influenced by continuous use, and the production cost is increased by increasing the frequency of replacing the polishing agent. The plasma polishing agent according to the related art has a non-ideal flash removal effect, and the sulfate and the organic acid are used in the cobalt nobelium metal polishing process, and the arc is generated in the cobalt nobelium metal, which cannot generate a uniform gloss, so that the two cannot be simultaneously applied to the cobalt nobelium metal.
In the existing polishing agent, the pH value needs to be maintained at 5-5.5 due to the existence of organic acid and the like in the plasma polishing process, so that the difficulty of subsequent sewage treatment is increased.
It can be seen that existing polishing techniques need to be improved.
Disclosure of Invention
Based on this, the object of the invention is to provide a plasma polishing agent.
Another object of the present invention is to provide a method for preparing and using the above plasma polishing agent.
The technical scheme of the invention is as follows:
a plasma polishing agent comprising the components: the plasma polishing agent comprises the following components in percentage by mass: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate and 0.01-1% of glucose.
Preferably, the ratio of potassium sulfate: ammonium sulfate: anhydrous sodium sulphate: the weight ratio of glucose is 2: 1: 1: 1.
preferably, the plasma polishing powder comprises the following components in percentage by mass: potassium sulfate 0.3%, ammonium sulfate 0.2%, anhydrous sodium sulfate 0.3%, and glucose 0.2%.
Further, the plasma polishing agent can also comprise water balance.
Further, the water is deionized water. Interference by other ions can be avoided.
Further, the plasma polishing agent can be prepared into plasma polishing powder or plasma polishing liquid.
A method of preparing a plasma polish comprising:
s1: preparing raw materials by weight, including: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate, 0.01-1% of glucose and the balance of water;
s2: and (4) uniformly mixing the powder in the S1 at normal temperature, heating water, and adding the mixed powder into the water for dissolving.
Preferably, in the S2, the water is heated to 85 ℃, and then the mixed powder is added into the water to be dissolved.
When the plasma polishing agent is prepared into a polishing powder product for use, the polishing powder is dissolved in water to prepare a polishing solution according to the preparation method of the polishing solution before use, and then polishing operation is carried out according to the use method of the polishing solution; however, because the reaction of the polishing powder and water does not reach a complete fusion reaction, a small amount of workpieces are put into the polishing machine for polishing, and then the input amount of the workpieces is gradually increased. When the polishing solution product is used, the polishing solution is directly poured into polishing equipment.
The use method of the plasma polishing solution comprises the following steps: the plasma polishing solution is heated to 85-95 ℃, a water pump is started, a workpiece to be polished is placed in the polishing solution, the polishing voltage is 280-320V, and the polishing time can be adjusted to 300-500 seconds.
Preferably, the plasma polishing solution is used in a method of heating at 85 ℃, polishing voltage at 280V and polishing time at 400 seconds.
The plasma polish of the present invention is suitable for use with metals such as stainless steel 304/316, cobalt nobelium, vitalarm, and the like.
The invention has the beneficial effects that:
compared with the prior art, the plasma polishing agent can effectively remove burrs of a workpiece after casting or metal printing, and can remove at least 30%. The plasma polishing agent of the invention has the flash removing effect after beginning to react with the metal surface for 20 seconds, and can achieve the mirror effect by continuously reacting part of workpieces.
2) The pH value is 7-7.5, the pH value is close to neutral, and the environmental protection problem is effectively enhanced. The pH value is 7-7.5, and the environment-friendly effect is achieved for environmental and sewage treatment. Because in the polishing process, part of metal residues can be remained in the machine tank, and finally in the wastewater treatment link, if the pH value is alkaline, the precipitation speed removal rate can be improved through the aggregation and net capturing effects under the action of polymers with body structures, and the precipitation effect can be better coagulated in an alkaline environment.
3) In physical testing, the polish of the present invention was used for 14 consecutive days, increasing the wear time by about 30% over the prior art polishes. And after the polishing agent disclosed by the invention is used for a period of time, the durability time can be prolonged by adding a small amount of anhydrous sodium sulphate. The polishing cost for customers is also reduced, and the pollution discharge amount is relatively reduced, so that the polishing agent also contributes to environmental protection to a certain extent.
4) The polishing agent can polish the workpiece in one step without secondary processing.
Detailed Description
The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
The specific techniques or conditions not indicated in the examples of this application are performed according to the techniques or conditions described in the literature in the field or according to the product description. The reagents or instruments used in the examples of the present application are not indicated by manufacturers, and are all conventional products available from commercial sources and the like.
A plasma polishing agent comprises the following components in percentage by mass: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate and 0.01-1% of glucose.
In some embodiments, the plasma polishing agent component is a mixture of potassium sulfate: ammonium sulfate: anhydrous sodium sulphate: the weight ratio of glucose is 2: 1: 1: 1.
preferably, the composition of the plasma polishing agent comprises: potassium sulfate 0.3%, ammonium sulfate 0.2%, anhydrous sodium sulfate 0.3%, and glucose 0.2%.
In some embodiments, the plasma polishing agent of the present invention can be made into a plasma polishing powder or a plasma polishing solution.
In some embodiments, the plasma polishing agent and the balance of water are prepared into a plasma polishing solution, i.e., the plasma polishing solution comprises 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulfate, 0.01-1% of glucose and the balance of water.
In some embodiments, the water is deionized water, which can avoid interference from other ions.
In the plasma polishing agent, the anhydrous sodium sulphate and the sodium sulphate powder have the same chemical formula, but different refining processes are adopted. The anhydrous sodium sulphate is white, odorless and bitter crystal powder, the problem of instability and overlarge change amplitude of electric arc generated by sodium sulphate powder in the polishing process is solved, and the amplitude of the anhydrous sodium sulphate is relatively stable because the anhydrous sodium sulphate has the function of stabilizing the pH value of a plating solution and a buffering agent at the moment.
The anhydrous sodium sulphate can increase the conductivity of the solution. During polishing, if H in water+And OH-The concentration of the two ions is small, the speed of electrolysis is slow, and when H is increased in the solution+And OH-And then the reaction can be directly participated in, and the reaction speed is increased. When anhydrous sodium sulphate meets current, H will be generated+And OH-Increase the H content in the water+And OH-Take part in more reactions, which can help the stability of the conductivity on the workpiece and the appearance of gloss and gloss on the workpieceThe effect of averaging.
In the plasma polishing agent, the ammonium sulfate can cause the improvement of the metal molecular structure, thereby forming new molecules by oxidation and achieving the polishing purpose by the current removal effect. Ammonium sulfate may also increase the conductivity of the polishing solution. Through a plurality of tests, the following results are found: the problems of unstable current and overlarge voltage usually occur only by adding ammonium sulfate, and if the anhydrous sodium sulphate and the glucose are added, the current and the voltage can be stabilized, and the metal flash can be better removed.
In the plasma polishing agent, potassium sulfate is used as a conductive salt and an auxiliary agent in the polishing process.
In the plasma polishing agent, glucose is used as a stabilizer in the polishing process, and the plasma polishing agent has the function of stabilizing voltage and current. Repeated practical verification shows that when glucose is not added, the voltage and current are unstable after a certain polishing time, which may be caused by the reduction of the arc component in water or the change of the activity level. The polishing agent added with glucose still keeps stable voltage and current for a long time after the polishing agent without glucose has unstable voltage and current.
The preparation method of the plasma polishing agent comprises the following steps:
s1: preparing raw materials by weight, including: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate, 0.01-1% of glucose and the balance of water;
s2: and (3) uniformly mixing the powder in the S1 at normal temperature, heating water (preferably 85 ℃), and adding the mixed powder into the water to dissolve.
In some embodiments, when the plasma polishing agent of the present invention is used as a polishing powder product, the polishing powder is dissolved in water to form a polishing solution according to the above-mentioned method for preparing the polishing solution before use, and then the polishing operation is performed according to the method for using the polishing solution described later; however, because the reaction of the polishing powder and water does not reach a complete fusion reaction, a small amount of workpieces are put into the polishing machine for polishing, and then the input amount of the workpieces is gradually increased. When the polishing solution product is used, the polishing solution is directly poured into polishing equipment.
The use method of the plasma polishing solution comprises the following steps: the plasma polishing solution is heated to 85-95 ℃, a water pump is started, a workpiece to be polished is placed in the polishing solution, the polishing voltage is 280-320V, and the polishing time can be adjusted to 300-500 seconds.
Specifically, the plasma polishing agent is added into a machine groove of a plasma polishing machine, the temperature is heated to 85 ℃, then a workpiece is hung on a direct hanging rack and hung on a direct hanging arm of the machine groove, the polishing voltage is 280V, the polishing time is adjusted to 400 seconds, the workpiece is taken out after the polishing time is reached, and the whole polishing process is completed.
In some embodiments, the polishing temperature includes, but is not limited to, 86 ℃, 87 ℃, 88.5 ℃, 89 ℃, and the like; the polishing voltage includes, but is not limited to, 320V, 300V, 315V, 302V, 290V, etc.; the polishing time includes, but is not limited to, 300 seconds, 340 seconds, 450 seconds, 500 seconds, and the like.
In the use method of the plasma polishing solution, the arc stability in the polishing solution can be changed when the temperature is too high or too low. The voltage is set according to the composition of the polishing agent according to the invention, and if it is too high, the wear is too great, and if it is too low, the effect is not significant. The polishing time can be determined according to the rough polishing effect of each workpiece; and different adjustments can be made according to the size, thickness and shape of the workpiece. Specific examples thereof include: other conditions are unchanged, the amount of the powder is increased, and the polishing time can be reduced; the other conditions are unchanged, the larger the workpiece size or the larger the workpiece amount is, the longer the polishing time is; the temperature increase or decrease changes the amount and time of arcing, and the corresponding polishing time decreases or increases.
In the use method of the polishing solution, after the polishing operation is started, the water pump needs to be started in the whole process to maintain the stability of electric arcs and the average current amount in the polishing process, so that the workpiece can be uniformly polished to achieve the optimal polishing effect.
The plasma polish of the present invention is suitable for use with metals such as stainless steel 304/316, cobalt nobelium, vitalarm, and the like.
In the prior art, the sulfate is not used to make the gloss uniform on the cobalt nobelium metal, and the citric acid is used as the polishing additive, so that the arc is generated on the cobalt nobelium metal, and the workpiece is yellowed and the gloss is uneven.
Example A plasma polishing solution and a method for preparing the same according to the present invention
The plasma polishing solution of the embodiment comprises the following components by mass: potassium sulfate 0.3%, ammonium sulfate 0.2%, anhydrous sodium sulfate 0.3%, glucose 0.2%, and deionized water in balance;
the preparation method of the plasma polishing solution of the embodiment comprises the following steps:
s1: preparing raw materials according to the mixture ratio;
s2: and (3) uniformly mixing the powder in the S1 at normal temperature, heating water to 85 ℃, and adding the mixed powder into the water for dissolving.
Example two plasma polishing solution of the invention and method for preparing the same
The plasma polishing solution of the embodiment comprises the following components by mass: potassium sulfate 0.1%, ammonium sulfate 0.05%, anhydrous sodium sulfate 0.05%, glucose 0.05%, and deionized water in balance;
the preparation method of the plasma polishing solution of this embodiment is the same as that of the first embodiment.
EXAMPLE III plasma polishing solution of the present invention and method for preparing the same
The plasma polishing solution of the embodiment comprises the following components by mass: 2.5% of potassium sulfate, 1% of ammonium sulfate, 1% of anhydrous sodium sulphate, 1% of glucose and the balance of deionized water;
the preparation method of the plasma polishing solution of this embodiment is the same as that of the first embodiment.
Example four plasma polishing solution of the invention and method of preparing the same
The plasma polishing solution of the embodiment comprises the following components by mass: 3% of potassium sulfate, 0.8% of ammonium sulfate, 0.2% of anhydrous sodium sulphate, 0.7% of glucose and the balance of deionized water;
the preparation method of the plasma polishing solution of this embodiment is the same as that of the first embodiment.
Example five plasma polishing solutions of the invention and methods of making the same
The plasma polishing solution of the embodiment comprises the following components by mass: potassium sulfate 0.2%, ammonium sulfate 0.01%, anhydrous sodium sulfate 0.8%, glucose 0.2%, and deionized water in balance;
the preparation method of the plasma polishing solution of this embodiment is the same as that of the first embodiment.
Example six plasma polishing solution of the present invention and method for preparing the same
The plasma polishing solution of the embodiment comprises the following components by mass: 1% of potassium sulfate, 0.2% of ammonium sulfate, 0.01% of anhydrous sodium sulphate, 0.2% of glucose and the balance of deionized water;
the preparation method of the plasma polishing solution of this embodiment is the same as that of the first embodiment.
Comparative example a conventional plasma polishing solution and a method for preparing the same
The plasma polishing solution of the comparative example is prepared from 7 parts by weight of sulfate, 1 part by weight of citric acid monohydrate, and 210 parts by weight of water.
The sulfate is potassium sulfate and ammonium sulfate, and the weight ratio of the potassium sulfate to the ammonium sulfate is 1: 2.5.
According to the preparation method of the polishing solution of the comparative example, sulfate and organic acid are mechanically and uniformly blended at room temperature, and then are placed in water to be stirred and dissolved, so that the polishing solution is obtained.
Physical testing (1)：
The same lot of the cobalt nobelium workpieces were polished with the polishing liquids of the first to sixth examples and the first comparative example, respectively, the polishing operations being: adding each plasma polishing solution into a machine groove of a plasma polishing machine, heating to 85 ℃, starting a water pump, hanging a workpiece on a direct hanging rack and hanging the workpiece on a direct hanging arm of the machine groove, wherein the polishing voltage is 280V, the polishing time can be adjusted to 400 seconds, taking out the workpiece after the polishing time is reached, and finishing the whole polishing process.
The cobalt nobelium workpieces polished with the polishing agents of the above examples one to six, comparative example one were compared in a manner of visual observation and touch, and the results of the comparison were as follows:
table 1: comparative information table of cobalt nobelium workpiece in polishing process
Physical test (2):
the polishing liquids of examples one to six and comparative example one were used to polish the workpieces continuously, and the polishing treatment was carried out for 20 days continuously with the same amount of workpieces and the same batch per day. It was found that the polishing solutions of examples one to six were stable after 14 days of continuous use, and still improved the gloss and smoothness of the polished workpiece by more than 20%, which was at least 30% longer than the polishing composition of comparative example one. After 20 days, the anhydrous sodium sulphate is added, the polishing effect is improved, and the polishing agent can still be used continuously.
The existing polishing agent is the same as the polishing agent of the comparative example I, citric acid is mostly used as a brightening agent, the maintenance and the persistence of the citric acid are low, the workpiece cannot generate the brightening effect after a certain time, and the frequency of replacing the polishing agent is increased, so that the production cost is increased. The polishing agent disclosed by the invention has good durability, can be used for a longer practice, can be continuously used after anhydrous sodium sulphate is added when the polishing effect is reduced, can reduce the polishing cost for customers, and is helpful for the environment due to the relatively reduced pollution discharge amount.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (10)
1. The plasma polishing agent is characterized by comprising the following components in parts by mass: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate and 0.01-1% of glucose.
2. The plasma polishing agent according to claim 1 wherein the composition of the plasma polishing agent comprises, potassium sulfate: ammonium sulfate: anhydrous sodium sulphate: the weight ratio of glucose is 2: 1: 1: 1.
3. the plasma polish of claim 2, wherein the composition of the plasma polishing powder comprises: potassium sulfate 0.3%, ammonium sulfate 0.2%, anhydrous sodium sulfate 0.3%, and glucose 0.2%.
4. The plasma polishing agent according to any of claims 1 to 3, characterized in that the components of the plasma polishing agent further comprise a balance of water.
5. The plasma polish of claim 4 wherein said water is deionized water.
6. A method of producing a plasma polishing agent, comprising:
s1: preparing raw materials by weight, including: 0.1-3% of potassium sulfate, 0.01-1% of ammonium sulfate, 0.01-1% of anhydrous sodium sulphate, 0.01-1% of glucose and the balance of deionized water;
s2: and (3) uniformly mixing the powder in the S1 at normal temperature, heating deionized water, and adding the mixed powder into water for dissolving to obtain the polishing solution.
7. The method of claim 6 wherein the deionized water in S2 is heated at a temperature of 85 ℃.
8. Use of the plasma polishing agent according to any one of claims 1 to 5 or the method for producing a plasma polishing agent according to claim 6 or 7, characterized in that the method for using the plasma polishing agent comprises the steps of:
s1: heating the balance of deionized water to 85 ℃, uniformly mixing the plasma polishing agent powder material of any one of claims 1 to 5, and dissolving the mixture in the hot water to obtain a polishing solution;
s2: heating the polishing solution obtained in S1 or the plasma polishing solution prepared by the method for preparing the plasma polishing agent according to claim 6 or 7 to 85-90 ℃, putting a to-be-polished piece into the polishing solution, setting the polishing voltage to be 280-320V, and polishing for 300-500 seconds.
9. The method of using a plasma polish of claim 8 wherein said method of using is characterized by the operating parameters of: the temperature was heated to 85 ℃, the polishing voltage was 280V, and the polishing time was 400 seconds.
10. The method of using the plasma polish of any one of claims 8 to 9, wherein the piece to be polished in S2 comprises a stainless steel 304 workpiece, a stainless steel 316 workpiece, a cobalt nobelium metal workpiece, or a vitally metal workpiece.
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| CN202011551920.4A CN112500802A (en) | 2020-12-24 | 2020-12-24 | Plasma polishing agent and preparation method and application thereof |
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| CN202011551920.4A CN112500802A (en) | 2020-12-24 | 2020-12-24 | Plasma polishing agent and preparation method and application thereof |
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| US20090236232A1 (en) * | 2008-03-24 | 2009-09-24 | Fujitsu Limited | Electrolytic plating solution, electrolytic plating method, and method for manufacturing semiconductor device |
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| CN105624770A (en) * | 2014-11-26 | 2016-06-01 | 乐普（北京）医疗器械股份有限公司 | Electrochemical polishing solution for cobalt-based alloy |
| CN109735895A (en) * | 2018-12-07 | 2019-05-10 | 南京工程学院 | A kind of the electrolyte plasma polishing fluid and polishing process of aluminium alloy |
| CN110129872A (en) * | 2019-05-23 | 2019-08-16 | 广州市雷傲科技有限公司 | Polishing fluid is used in a kind of polishing of cobalt chrome metal electrolyte plasma |
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2020
- 2020-12-24 CN CN202011551920.4A patent/CN112500802A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090236232A1 (en) * | 2008-03-24 | 2009-09-24 | Fujitsu Limited | Electrolytic plating solution, electrolytic plating method, and method for manufacturing semiconductor device |
| CN105624770A (en) * | 2014-11-26 | 2016-06-01 | 乐普（北京）医疗器械股份有限公司 | Electrochemical polishing solution for cobalt-based alloy |
| CN104947115A (en) * | 2015-07-27 | 2015-09-30 | 浙江湖磨抛光磨具制造有限公司 | Application method of environment-friendly metal polishing solution |
| CN109735895A (en) * | 2018-12-07 | 2019-05-10 | 南京工程学院 | A kind of the electrolyte plasma polishing fluid and polishing process of aluminium alloy |
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Application publication date: 20210316 |