CN112491252A - Driving method and circuit for improving reliability of SIC MOSFET - Google Patents
Driving method and circuit for improving reliability of SIC MOSFET Download PDFInfo
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- CN112491252A CN112491252A CN202011603609.XA CN202011603609A CN112491252A CN 112491252 A CN112491252 A CN 112491252A CN 202011603609 A CN202011603609 A CN 202011603609A CN 112491252 A CN112491252 A CN 112491252A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a driving method and a driving circuit for improving the reliability of a SIC MOSFET (semiconductor-on-insulator) which can adjust the driving voltage of a SIC MOSFET according to the load condition (current magnitude) and set a load current judgment critical value for preventing system misjudgment and improving the judgment accuracy. The invention is suitable for all power supply schemes of the SIC MOSFET, completely solves the problem that the SIC MOSFET has narrow driving voltage stress safety range and is easy to lose efficacy by combining software and hardware, and improves the reliability of products.
Description
Technical Field
The invention relates to the field of an ACDC (alternating current direct current converter) rectification power supply, in particular to a driving method and a driving circuit for improving the reliability of a SIC MOSFET (metal oxide semiconductor field effect transistor).
Background
In the field of charging of new energy automobiles, in order to improve charging speed, the power of a charging module is increased more and is limited by the current 32A of a single-phase power grid, a three-phase power grid is generally required to be adopted for higher power, and a high-power electric energy conversion device is required to have higher power factor so as to reduce the problems of reactive power consumption, harmonic waves and the like of the power grid.
At present, in order to realize higher power factor, three-phase vienna PFC (power factor correction) topology is usually adopted at the front stage, 380VAC line voltage is under the condition of uncontrolled rectification, the peak value of the rectified voltage is close to 540VDC, and the fluctuation of input grid voltage is considered, so the full bus voltage is usually designed to be as high as 800VDC, in order to realize the voltage and current control requirement required by charging, a DCDC voltage conversion device is usually required at the rear stage, because the input bus voltage is as high as 800VDC, the rear stage usually adopts three-level topology (using 600V voltage-resistant switching tubes) or two-level topology (using 1200V switching tubes), because at present, in order to pursue high power density, the system operating frequency is usually as high as hundreds of KHz switching frequency, metal-oxide semiconductor field effect transistors (MOSFETs) are currently used more in this frequency range, and at present, two materials are mainly used, one is a silicon SI MOSFET and the other is a silicon carbide SIC MOSFET, since the 1200V withstand SI MOSFET is very costly, much higher than the 1200V withstand SIC MOSFET, and therefore if a two-level topology is used, SCI MOSFET devices are typically used. At present, the driving voltage range of an SCI MOSFET is narrow, the highest positive allowable voltage is smaller than 25VDC, the negative allowable voltage is larger than-8 VDC, the voltage-resisting range of different manufacturers is different, but compared with the driving voltage range of an SI MOSFET, the driving voltage of a switching tube usually causes oscillation due to stray parameters on a circuit, the SIC MOSFET is failed and explodes when serious, and then the whole module cannot work normally.
Therefore, in order to control the voltage within a safe range meeting the requirements of the device, the working driving voltage cannot be designed too high, but the SIC MOSFET has a characteristic that the higher the gate driving voltage of the switching tube is, the smaller the on-resistance Rdson is, the more beneficial the reduction of the on-loss is, and the better balance is needed between the two, so that the driving voltage of the SIC MOSFET needs to be designed finely, thereby improving the application reliability of the device and playing the maximum value of the device.
Disclosure of Invention
The invention provides a driving method and a driving circuit for improving the reliability of a SICMOS (semiconductor-on-insulator-semiconductor field effect transistor). In the high-frequency switching power supply, under the condition of high-speed switching, because of stray parameters in a circuit, high-frequency oscillation exists in the driving voltage and the drain-source voltage of a switching tube, when a large voltage change du/dt and a large current change di/dt exist in the circuit, the voltage stress is further increased, because a 1200V withstand voltage SIC MOSFET is adopted, the drain-source voltage stress of the switching tube usually completely meets the requirement, and main risk points are concentrated on the gate driving voltage of the switching tube, so that the driving voltage of the switching tube can be reduced when the gate stress of the switching tube is large, the reliability of the switching tube can be effectively ensured, although the reduction of the gate driving voltage brings increase at the moment, the moment when the stress of the switching tube is large usually occurs is under the conditions of a gap working mode, light load and the like of the switching power supply, the load is gradually increased, and the whole switching driving stress becomes good, therefore, the driving stress of the switching tube is reduced under the condition of clearance and light load, the influence on the efficiency is small, and the working reliability of the SIC MOSFET can be greatly improved.
The driving method for improving the reliability of the SIC MOSFET can adjust the driving voltage of the SIC MOSFET according to the load condition (current magnitude), and set the load current judgment critical value, so as to prevent system misjudgment and improve the judgment accuracy. The invention is suitable for all power supply schemes of the SIC MOSFET, completely solves the problem that the SIC MOSFET has narrow driving voltage stress safety range and is easy to lose efficacy by combining software and hardware, and improves the reliability of products.
Drawings
FIG. 1 is a schematic diagram of improving reliability of gate drive of a SIC MOSFET;
FIG. 2 is a flow chart of a control process for improving reliability of gate drive of SIC MOSFETs.
Detailed Description
In order to implement the technical solution of the present invention, and to make more engineers easily understand and apply the present invention, a driving method and a circuit for improving the reliability of the SIC MOSFET will be further described with reference to the specific embodiments.
The control circuit for improving the gate drive reliability of the SIC MOSFET comprises:
a detection unit that detects an output load current;
a driving unit including a driving transformer;
the adjusting unit comprises a winding change-over switch connected with the secondary winding of the driving transformer and is used for adjusting the number of turns of the secondary winding of the driving transformer so as to adjust the driving voltage of the driving unit;
and the control unit senses the load condition according to the data of the detection unit and controls the adjusting unit according to the load condition.
Further, the controlling and adjusting unit according to the load condition includes: when the load current is smaller than the Ix value, the winding selector switch is switched to reduce the number of turns of the secondary winding of the driving transformer, so that the gate voltage of the SIC MOSFET is lower, and the reliability of the SIC MOSFET can be improved; if the load current is larger than the Ix value, the winding change-over switch is switched to increase the number of turns of the secondary winding of the driving transformer, so that the gate driving voltage of the SIC MOSFET is increased, and the on-resistance improvement efficiency is reduced.
Further, the selection of Ix includes: the voltage of a drive pin of the MOSFET is tested through a low-voltage probe, the load current is adjusted by adjusting the drive voltage of the SIC MOSFET, and the corresponding load current and the current margin are added to be used as the Ix value when the drive stress just enters a small value.
Further, the winding change-over switch comprises Qs1 and Qs2, when the load current is less than the Ix value, the winding change-over switch Qs1 is closed, and Qs2 is opened; if the load current is greater than the Ix value, the winding switch Qs1 is opened and Qs2 is closed.
Further, the current margin is selected in terms of a 5% reduction in driving stress.
According to the invention, by detecting the output load current, the driving stress is smaller when the load current is larger, and the driving stress is larger when the load current is smaller, especially under the condition of intermittent wave-generating working condition and extremely light load, the driving stress of the SIC MOSFET is very high, and the required value of the SIC MOSFET is easily exceeded. The invention realizes the adjustment of the driving voltage by adjusting the number of turns of the secondary winding of the driving transformer, reduces the driving platform voltage of the SIC MOS tube when the load current is smaller, and can ensure the reliability of the SIC MOS tube because the platform voltage is reduced and the platform voltage plus the peak voltage has a certain reduction from the maximum allowable value. Due to the fact that stray parameters of the circuit are inconsistent, in practical application, the voltage of a driving pin of an MOS (metal oxide semiconductor) tube needs to be tested by actually adopting a low-voltage probe, the driving stress of working conditions under the working conditions is higher by adjusting load current, the driving voltage of the SIC MOS needs to be adjusted, the working conditions are found, a certain current margin is reserved, and the current value is used as an Ix value, so that the driving voltage is lower when the load current is smaller than the Ix value, and is higher when the load current is larger than the Ix value, the on-resistance is smaller, higher efficiency is realized. The smaller the load current is, the higher the driving stress is, and Ix can understand that a margin is added to the corresponding load current when the driving stress just enters a smaller value, the load current is adjusted to find out when the driving stress just reaches the desired smaller value and is smaller by 5%, and the current is taken as Ix.
For example, fig. 1 is a schematic diagram for improving the reliability of gate driving of a SIC MOSFET, and the switching device is applied to the SIC MOSFET, and generally has a half-bridge or full-bridge structure. Through the real-time collection of load current, the controller can perceive the load condition of the module at the moment, and controls whether the auxiliary winding change-over switch Qs1 and Qs2 of the driving transformer act or not according to the load condition, when the load current is small, the winding change-over switch Qs1 is closed, and Qs2 is opened, so that the gate voltage of the SIC MOSFET is low, and the reliability of the SIC MOSFET can be improved. If the load current is increased, the secondary winding change-over switch Qs1 is controlled to be switched off, Qs2 is controlled to be switched on, the gate driving voltage of the SIC MOSFET is improved, the on-resistance improvement efficiency is reduced, and the driving voltage stress of the switching tube is lower under the heavy load steady state, so that the scheme is feasible.
Fig. 2 shows a control process for improving the reliability of the gate drive of the SIC MOSFET, and the specific strategy is described in detail as follows:
(1) powering on a power supply module;
(2) initializing variables, namely outputting a load current Io, outputting a load current judgment value Ix and clearing all initial values of all driving signals;
(3) the winding change-over switch Qs1 is closed, Qs2 is opened, and the number of turns of the secondary winding N = Ns1 means that the number of turns of the secondary voltage of the driving transformer is small, so that the output voltage is low, because the output load current is gradually increased from 0 in the whole starting process, and the gate voltage oscillation of the switch tube is large when the load current is small, the whole driving voltage can be reduced by a little in the state, so that the reliability is ensured;
(4) the MCU collects and detects the load current in real time;
(5) judging whether the load current is larger than a judgment threshold Ix, wherein Ix is selected according to actual test check of the circuit, when the load current is increased to a certain value, usually after the circuit enters a continuous mode, a gate drive waveform is good, stress is small, the Ix value can be set to the value, and the adjustment is specifically needed according to the condition of a current stray parameter, so that the actual test judgment is needed;
(6) when the detected load current is larger than the winding switching judgment current threshold Ix, the SIC MOSFET driving voltage is considered to be lifted, so that the controller sends an instruction, the winding switching switch Qs1 is switched off, Qs2 is switched on, the number of turns of the secondary winding is changed to Ns1+ Ns2, different driving voltages are designed according to different SIC MOSFETs, the driving voltage is lifted higher under the condition that the gate stress is controllable, the SIC MOSFET on-resistance can be reduced, and the efficiency is improved;
(7) when the detected load current is smaller than the winding switching judgment current threshold Ix, the winding switching switch Qs2 is switched off, Qs1 is closed, the number of turns of the secondary winding N = Ns1, the driving voltage is maintained at a lower level, the voltage stress of the driving gate electrode is guaranteed to meet the requirements of devices, the reliability of the gate electrode of the SIC MOSFET is improved, the damage to an explosive machine is prevented, the driving threshold voltage becomes lower, the conducting resistance of the SIC MOSFET becomes higher, but the voltage amplitude of the driving gate electrode is reduced, the voltage stress of the whole gate electrode becomes lower, and the SIC MOSFET works in a safer and more reliable interval.
The above embodiments are merely exemplary illustrations of the present invention, and are not intended to limit the present invention. Further steps not described in detail belong to technical content well known to the person skilled in the art. Corresponding changes and modifications within the spirit of the invention are also within the scope of the invention.
Claims (10)
1. A control circuit for improving reliability of gate drive of a SIC MOSFET, comprising:
a detection unit that detects an output load current;
a driving unit including a driving transformer;
the adjusting unit comprises a winding change-over switch connected with the secondary winding of the driving transformer and is used for adjusting the number of turns of the secondary winding of the driving transformer so as to adjust the driving voltage of the driving unit;
and the control unit senses the load condition according to the data of the detection unit and controls the adjusting unit according to the load condition.
2. The control circuit of claim 1, wherein the controlling the regulating unit according to the load condition comprises: when the load current is smaller than the Ix value, the winding selector switch is switched to reduce the number of turns of the secondary winding of the driving transformer, so that the gate voltage of the SIC MOSFET is lower, and the reliability of the SIC MOSFET can be improved; if the load current is larger than the Ix value, the winding change-over switch is switched to increase the number of turns of the secondary winding of the driving transformer, so that the gate driving voltage of the SIC MOSFET is increased, and the on-resistance improvement efficiency is reduced.
3. The control circuit of claim 2, wherein the selection of Ix comprises: the voltage of a drive pin of the MOSFET is tested through a low-voltage probe, the load current is adjusted by adjusting the drive voltage of the SIC MOSFET, and the corresponding load current and the current margin are added to be used as the Ix value when the drive stress just enters a small value.
4. The control circuit of claim 2, wherein the winding switcher includes Qs1 and Qs2, when the load current is less than the Ix value, then the winding switcher Qs1 is closed and Qs2 is open; if the load current is greater than the Ix value, the winding switch Qs1 is opened and Qs2 is closed.
5. A control circuit according to claim 3, wherein the current margin is selected in accordance with a 5% reduction in drive stress.
6. A control method for improving reliability of gate drive of a SIC MOSFET comprises the following steps:
(1) powering on a power supply module;
(2) initializing variables, namely outputting a load current Io, outputting a load current judgment value Ix and clearing all initial values of all driving signals;
(3) the number of turns of a secondary winding of the driver is reduced by switching the winding change-over switch, the output load current is gradually increased from 0, and the whole driving voltage is reduced to ensure the reliability;
(4) the MCU collects and detects the load current in real time;
(5) judging whether the load current is larger than a winding switching judgment threshold Ix;
(6) when the detected load current is larger than the winding switching judgment current threshold Ix, the SIC MOSFET driving voltage is considered to be lifted, and the winding switching switch is switched to increase the number of turns of the secondary winding;
(7) when the detected load current is smaller than the winding switching judgment current threshold Ix, the winding switching switch is switched to reduce the number of turns of the secondary winding, and the driving voltage is maintained at a lower level, so that the voltage stress of the driving gate electrode is ensured to meet the requirements of the device.
7. The control method according to claim 6, wherein Ix is selected according to actual circuit testing, and the gate driving waveform is better after the circuit enters the continuous mode, and the corresponding load current value is Ix when the driving stress is smaller.
8. The control method of claim 6, wherein raising the SIC MOSFET drive voltage comprises: different driving voltages are designed according to different SIC MOSFETs, and under the condition of ensuring controllable gate stress, the driving voltages are raised to be higher so as to reduce the on-resistance of the SIC MOSFETs and improve the efficiency; and/or
The winding change-over switch comprises a Qs1 and a Qs2, when the load current is smaller than the Ix value, the winding change-over switch Qs1 is closed, and Qs2 is opened; if the load current is greater than the Ix value, the winding switch Qs1 is opened and Qs2 is closed.
9. A control method as in claim 6 wherein Ix is the load current plus current margin value corresponding to the driving stress just entering a lower value.
10. A control method as claimed in claim 9, wherein the current margin is selected in accordance with a 5% reduction in drive stress.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011603609.XA CN112491252A (en) | 2020-12-30 | 2020-12-30 | Driving method and circuit for improving reliability of SIC MOSFET |
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| CN202011603609.XA CN112491252A (en) | 2020-12-30 | 2020-12-30 | Driving method and circuit for improving reliability of SIC MOSFET |
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Cited By (2)
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| CN115173694A (en) * | 2022-09-08 | 2022-10-11 | 广东高斯宝电气技术有限公司 | Control method of three-phase Vienna PFC circuit |
| CN115881574A (en) * | 2023-03-08 | 2023-03-31 | 广东仁懋电子有限公司 | Method, system, equipment and medium for improving preparation effect of silicon carbide MOS (Metal oxide semiconductor) tube |
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Application publication date: 20210312 |