CN112490207A - Power device heat radiation structure and dc-to-ac converter - Google Patents
Power device heat radiation structure and dc-to-ac converter Download PDFInfo
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- CN112490207A CN112490207A CN202011438691.5A CN202011438691A CN112490207A CN 112490207 A CN112490207 A CN 112490207A CN 202011438691 A CN202011438691 A CN 202011438691A CN 112490207 A CN112490207 A CN 112490207A
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- 230000005855 radiation Effects 0.000 title description 2
- 230000017525 heat dissipation Effects 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 238000005538 encapsulation Methods 0.000 claims abstract 2
- 239000004519 grease Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 8
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000002788 crimping Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/32—Electrical components comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention is suitable for the technical field of power device heat dissipation, and provides a power device heat dissipation structure and an inverter, wherein the heat dissipation structure comprises: the radiator, the power device of a plurality of single tube encapsulation is all equipped with the interval in the both sides at least of radiator, the radiator with be equipped with ceramic substrate between the power device, the bottom of radiator is equipped with air-cooled device for take away from a plurality of power device channels into the heat of radiator. According to the invention, the power device is subjected to single-tube packaging and is in pressure joint with at least two sides of the radiator, so that on one hand, the length of the radiator tooth is fully utilized, the temperature gradient of the radiating fin is reduced, and the power density is improved; on the other hand, the space on the back of the radiator is fully utilized, and the heat dissipation power of unit volume is improved; in addition, compared with a power tube packaged by a module, the invention has the advantages that the heating points are dispersed, and the problem that the heating concentration is not beneficial to heat dissipation is solved.
Description
Technical Field
The invention belongs to the technical field of heat dissipation of power devices, and particularly relates to a heat dissipation structure of a power device and an inverter.
Background
Photovoltaic inverters used in large-scale ground photovoltaic power stations mainly include concentrated inverters, string inverters and distributed inverters. The concentrated inverter is a single-stage converter, and the last two inverters are both composed of two stages of boost and inversion converters, so that the cost and the volume of the series inverter and the dispersed inverter are higher in the same power section. With the arrival of the era of 'on-line at low price' in the photovoltaic industry, the photovoltaic power station has higher and higher requirements on the cost of the photovoltaic inverter.
At present, each manufacturer in the industry realizes reduction of the single watt cost of the inverter by improving the single machine power, for example, the single machine power of the series inverter is generally below 20KW in 2014, and the single watt cost of the series inverter of each manufacturer is reduced from 0.2 yuan/W to 0.08 yuan/W in 2020. The improvement of unit power need insert more photovoltaic group cluster, take the BOOST circuit of 1 MPPT of two way group cluster component as an example, on the 20KW inverter, only need insert 4 group clusters, built-in two BOOST circuits, but at the 225KW inverter, need insert 24 group clusters, built-in 12 BOOST circuits, this just needs increase inverter cabinet volume in order to place more BOOST circuits, inverter weight also can increase simultaneously, this degree of difficulty and the work load that will increase the field installation, also not convenient later stage change and maintenance. This requires that the power density of the photovoltaic inverter be increased, and the size and weight of the cabinet be reduced as much as possible. At present, most of BOOST circuits in photovoltaic inverters of over 100KW of various manufacturers use IGBT modules, such as an IGBT module packaged by Easy3B of the british flying, an IGBT module packaged by Flow2 of Vincotec, and the IGBT modules are crimped on a single-sided radiator.
Disclosure of Invention
The embodiment of the invention provides a heat dissipation structure of a power device, and aims to solve the problems that the conventional power device is low in power density and high in cost, and heat of a power module is concentrated and is not beneficial to heat dissipation.
The embodiment of the invention is realized in such a way that the embodiment provides a power device heat dissipation structure, which comprises a heat radiator and a plurality of single-tube packaged power devices arranged on at least two sides of the heat radiator at intervals, wherein a ceramic substrate is arranged between the heat radiator and the power devices, and the bottom of the heat radiator is provided with an air cooling device used for taking away heat led into the heat radiator from the plurality of power devices.
Furthermore, the heat radiator comprises two oppositely arranged substrates, a plurality of heat radiating toothed sheets are arranged between the two substrates, and the power device is connected to the outer sides of the substrates in a pressing mode.
Further, the ceramic substrate and the power device are connected through an elastic rigid sheet.
Further, the power device is packaged by a T0247 package or a T0220 package.
Furthermore, the ceramic substrate is made of alumina or silicon nitride.
Furthermore, both sides of the ceramic substrate are coated with heat conductive silicone grease.
Furthermore, a temperature sensor for measuring the temperature of the power device is adhered on the power device.
Furthermore, the device also comprises an alarm device which is used for outputting an alarm protection signal when the frequency of the temperature rise of the power device in the preset time is greater than a preset threshold value.
Furthermore, the invention also provides an inverter which comprises the power device heat dissipation structure.
According to the invention, the single-tube packaged power device is pressed on at least two sides of the radiator at intervals, so that the length of the radiator tooth is fully utilized, the temperature gradient on the tooth is reduced, the power density of the power device is improved, and meanwhile, the space on the back of the radiator is fully utilized, and the radiating power of unit area is improved. In addition, compared with a module packaging cost of the single-tube packaged power device, the single-tube packaged power device is low in packaging cost, and heating points of the single-tube packaged power device are dispersed, so that the problem that the existing power device is not beneficial to heat dissipation due to concentrated heating is solved.
Drawings
Fig. 1 is a schematic structural diagram of a heat dissipation structure of a power device according to an embodiment of the present invention
Fig. 2 is another schematic structural diagram of a heat dissipation structure of a power device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a power device crimping according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a power device provided in an embodiment of the present invention.
The reference numbers illustrate:
10. a heat sink; 11. a substrate; 12. a heat dissipating blade; 20. a power device; 21. a temperature sensor; 30. a ceramic substrate; 40. an elastic rigid sheet; 41. and (4) screws.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The power device of the existing photovoltaic inverter mainly adopts a plurality of power groups to be packaged into an IGBT module, so that the power device is not beneficial to centralized heat dissipation, and has low power density and high power module cost; on the other hand, the space on the back of the radiator is fully utilized, and the heat dissipation power of unit volume is improved. Compared with a power device packaged by a module, the power device packaged by the module is low in packaging cost, heating points of the power device are dispersed, and the problem that the existing power device is not beneficial to heat dissipation due to concentrated heating is solved.
Example one
Referring to fig. 1 to 3, the present invention provides a heat dissipation structure of a power device, the heat dissipation structure including: at least two sides of the radiator 10 and the radiator 10 are respectively provided with a plurality of power devices 20 packaged by single tubes at intervals, a ceramic substrate 30 is arranged between the radiator 10 and the power devices 20, and the bottom of the radiator 10 is provided with an air cooling device for taking away heat led into the radiator 10 from the power devices 20.
In the embodiment of the present invention, the power device 20 includes, but is not limited to, a MOS transistor, an IGBT, a diode, a triode, and the like, and specifically, the power device 20 is composed of 2 IGBT power single tubes and 2 single tube diodes, where 2 IGBT power single tubes are connected in series, and 2 single tube diodes are connected in series. The IGBT power single tube and the single tube diode are connected in series. It is understood that in other embodiments, the power devices 20 may also be all IGBT power single-tubes, or single-tube diodes, and the specific situation is set according to actual needs.
Specifically, the power devices 20 are disposed on two opposite sides of the heat sink 10 at equal intervals, and it is understood that in other embodiments, the power devices 20 may be disposed on three other sides or four other sides of the heat sink 10, specifically according to the actual heat dissipation efficiency of the heat sink 10.
The air cooling device is arranged at the bottom of the heat dissipation structure, the air outlet is arranged at the top of the heat dissipation structure, in the embodiment, the heat dissipation structure is vertically arranged, the bottom is provided with a fan for blowing air, and the top is the air outlet so as to quickly dissipate heat from the top.
According to the embodiment of the invention, the power device 20 is packaged in a single tube and is uniformly crimped on at least two sides of the radiator 10, so that on one hand, the length of the radiator tooth sheets is fully utilized, the temperature gradient of the radiator tooth sheets is reduced, and the radiating efficiency is improved; on the other hand, the space on the back of the radiator is fully utilized, and the heat dissipation power of unit volume is improved. And for the power device of module package, with low costs and the point of generating heat is comparatively dispersed, has solved current power device and has generated heat and concentrate the problem that is unfavorable for the heat dissipation.
Example two
In the first embodiment, the heat sink 10 includes two substrates 11 disposed opposite to each other, the heat dissipation fins 12 are connected between the two substrates 11, and the power device 20 is pressed on the outer side of the substrates 11.
The radiating fins 12 of the heat sink 10 are located at the middle position of the two substrates 11, and the air duct formed in this way is located at the middle position of the two substrates 11, so that the radiating fins 12 can be effectively utilized for heat conduction. Compared with a single-side radiator, when the same air quantity flows through the air duct, more heat can be taken away, and higher power can be achieved under the same volume of the radiator.
Further, the power devices 20 are pressed against the ceramic substrate 30 by the elastic rigid pieces 40, two adjacent power devices 10 are pressed against the same ceramic substrate 30, and one end of the elastic rigid piece 40 is fixed to the substrate 11 by the screw 41. In the embodiment, the elastic rigid piece 40 is crimped on the surface of the power device, so that the crimping mode is flexible and convenient and is convenient to operate.
Further, both sides of the ceramic substrate 30 are coated with heat conductive silicone grease. Heat conductive silicone grease is coated between the power device 20 and the ceramic substrate 30, and between the ceramic substrate 30 and the substrate 11, and the material of the ceramic substrate 30 may be alumina, aluminum nitride or silicon nitride. The ceramic substrate 30 is coated with heat conductive silicone grease on both sides to facilitate rapid transfer of heat from the power device 10 to the heat sink 10.
EXAMPLE III
On the basis of the first embodiment, the power device 20 employs a T0247 package or a T0220 package. The embodiment of the invention independently packages each power device 20, has low cost, can disperse heat sources and is beneficial to heat dissipation.
Further, the flying capacitor three-level BOOST topology is selected as the circuit of the power device 20, and different power devices can be selected according to the circuit topology structure due to the adoption of single-tube crimping.
In this embodiment, the IGBT power tubes on both sides of the heat sink 10 use single tubes packaged by TO247, and the voltage and current specifications of the IGBT single tubes on the market are various, and this embodiment can flexibly form power modules of different voltage classes and power classes according TO the system design requirements. The IGBT power single tubes are uniformly pressed on the substrate 11, so that compared with an IGBT packaged by a module, the IGBT power single tubes can disperse heating points, and the problem of heating concentration is solved. In addition, the single-tube package of the IGBT with the same power is much lower than the module package price, and the cost is effectively reduced.
Example four
Referring to fig. 4, on the basis of any of the above embodiments, the power device 20 is further provided with a temperature sensor 21 for measuring the temperature of the power device, and the temperature sensor 21 is attached to the power device 20, so that the temperature of the power device can be accurately measured in real time.
Compared with the traditional method for measuring the temperature of the power tube, the NTC temperature measuring point is placed on a radiator near the power tube, and then the junction temperature of the wafer is estimated through test data, so that the measurement error is large, the temperature timeliness is poor, and if the power tube is not well pressed on the radiator, the temperature of the power tube is abnormally increased, and the power tube cannot be protected.
The elastic rigid piece 40 of the embodiment is pressed on the surface of the power device 20, the pressing area is small, and the surface of the power device 20 has enough space for installing the temperature sensor 21. In the embodiment, the temperature sensor 21 is adhered to the power single tube, so that the temperature of the power single tube can be accurately collected in real time.
Further, the heat dissipation structure further includes an alarm device, configured to output an alarm protection signal when a temperature coefficient of the temperature of the power device 20 rising within a preset time is greater than a preset threshold.
Specifically, a temperature value T1 at a first time T1 and a temperature value T2 at a second time T2 are recorded, a temperature coefficient of temperature rise in a preset time is equal to a ratio of a temperature difference between the first time and the second time to a time difference, and when the ratio is larger than a preset threshold value, an alarm signal is output to indicate that the temperature rise of the power single tube is too fast or heat is not dissipated in time, so that a warning signal is output to avoid damage to the power device due to overhigh temperature.
EXAMPLE five
The invention further provides an inverter, which comprises the power device heat dissipation structure of any one of the embodiments, and details are not repeated herein.
According to the inverter, the IGBT power single tubes are connected to at least two sides of the radiator in a crimping mode, on one hand, the length of the radiating tooth pieces is utilized, the temperature gradient of radiating fins is reduced, and the power density of the IGBT power single tubes is improved; on the other hand, the space on the back of the radiator is fully utilized, the heat dissipation power of unit volume is improved, and compared with a power module packaged by a module, the inverter provided by the invention is in single-tube compression joint, the cost is low, the heating points are dispersed, and the problem that the inverter packaged by the module generates heat and is concentrated and not beneficial to heat dissipation is solved.
According to the power device heat dissipation structure, the power devices are arranged on at least two sides of the heat radiator, and the air cooling device is arranged at the bottom of the heat radiator, so that on one hand, the length of the fins of the heat radiator is fully utilized, the temperature gradient of the heat radiating fins is reduced, and the heat dissipation efficiency is improved; on the other hand, the space on the back of the radiator is fully utilized, and the heat dissipation power of unit volume is improved. Compared with a power tube packaged by a module, the power tube packaging structure has the advantages that heating points are dispersed, and the problem that heating concentration is not beneficial to heat dissipation is solved. The tooth sheet of the radiator is positioned in the middle of the two substrates, and the air duct formed in the way is positioned in the middle of the two substrates, so that the tooth sheet can be effectively utilized for heat conduction. Compared with a single-side radiator, when the same air quantity flows through the air duct, more heat can be taken away, and higher power can be achieved under the same volume of the radiator. The IGBT power tubes on the two sides of the radiator are uniformly pressed on the radiator substrate by using single tubes packaged by TO247, so that compared with the IGBT packaged by using a module, the IGBT power tubes can disperse the heating points, and the problem of heating concentration is solved. In addition, the single-tube package of the IGBT with the same power is much lower than the module package price, and the cost is effectively reduced. In addition, a temperature sensor is pasted on the power single tube, and an alarm device is added, so that when the temperature rise coefficient in the preset time is larger than a preset threshold value, an alarm protection signal is output to avoid damaging the power single tube.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A heat dissipation structure for a power device, comprising:
the radiator, the power device of a plurality of single tube encapsulation is all equipped with the interval in the both sides at least of radiator, the radiator with be equipped with ceramic substrate between the power device, the bottom of radiator is equipped with air-cooled device for take away from a plurality of power device channels into the heat of radiator.
2. The power device heat dissipation structure of claim 1,
the radiator comprises two oppositely arranged substrates, a plurality of radiating tooth sheets are arranged between the two substrates, and the power device is connected to the outer sides of the substrates in a pressing mode.
3. The power device heat dissipation structure of claim 1,
the ceramic substrate and the power device are connected through the elastic rigid sheet.
4. The power device heat dissipation structure of claim 1,
the power device is packaged by T0247 or T0220.
5. The power device heat dissipation structure of claim 1,
the ceramic substrate is made of alumina or silicon nitride.
6. The power device heat dissipation structure of claim 1,
and both sides of the ceramic substrate are coated with heat-conducting silicone grease.
7. The power device heat dissipation structure of claim 1,
and a temperature sensor for measuring the temperature of the power device is also adhered to the power device.
8. The power device heat dissipation structure of claim 1,
the power device further comprises an alarm device, and the alarm device is used for outputting an alarm protection signal when the rising frequency of the temperature of the power device in the preset time is larger than a preset threshold value.
9. An inverter is characterized in that a DC-DC converter is provided,
the power device heat dissipation structure comprising any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011438691.5A CN112490207A (en) | 2020-12-10 | 2020-12-10 | Power device heat radiation structure and dc-to-ac converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011438691.5A CN112490207A (en) | 2020-12-10 | 2020-12-10 | Power device heat radiation structure and dc-to-ac converter |
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| Publication Number | Publication Date |
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| CN112490207A true CN112490207A (en) | 2021-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011438691.5A Pending CN112490207A (en) | 2020-12-10 | 2020-12-10 | Power device heat radiation structure and dc-to-ac converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782504A (en) * | 2021-09-08 | 2021-12-10 | 中国矿业大学 | Simplified packaging structure of power module of integrated radiator and manufacturing method |
| CN116741766A (en) * | 2023-08-16 | 2023-09-12 | 广东汇芯半导体有限公司 | Intelligent power module device and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6317321B1 (en) * | 1994-11-04 | 2001-11-13 | Compaq Computer Corporation | Lap-top enclosure having surface coated with heat-absorbing phase-change material |
| JP2002095267A (en) * | 2000-09-08 | 2002-03-29 | Toshiba Corp | Inverter device |
| KR20080000928A (en) * | 2006-06-28 | 2008-01-03 | 서울반도체 주식회사 | Bi-directional light emitting device |
| US20160165749A1 (en) * | 2014-12-09 | 2016-06-09 | Delta Electronics,Inc. | Power module and method for manufacturing the same |
| CN207664042U (en) * | 2018-01-03 | 2018-07-27 | 台达电子企业管理（上海）有限公司 | Radiator and power module for high voltage power device |
| CN210668342U (en) * | 2019-12-30 | 2020-06-02 | 重庆键合科技有限责任公司 | Radiator and radiating structure of semiconductor power module |
| CN213988873U (en) * | 2020-12-10 | 2021-08-17 | 上能电气股份有限公司 | Power device heat radiation structure and dc-to-ac converter |
-
2020
- 2020-12-10 CN CN202011438691.5A patent/CN112490207A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6317321B1 (en) * | 1994-11-04 | 2001-11-13 | Compaq Computer Corporation | Lap-top enclosure having surface coated with heat-absorbing phase-change material |
| JP2002095267A (en) * | 2000-09-08 | 2002-03-29 | Toshiba Corp | Inverter device |
| KR20080000928A (en) * | 2006-06-28 | 2008-01-03 | 서울반도체 주식회사 | Bi-directional light emitting device |
| US20160165749A1 (en) * | 2014-12-09 | 2016-06-09 | Delta Electronics,Inc. | Power module and method for manufacturing the same |
| CN207664042U (en) * | 2018-01-03 | 2018-07-27 | 台达电子企业管理（上海）有限公司 | Radiator and power module for high voltage power device |
| CN210668342U (en) * | 2019-12-30 | 2020-06-02 | 重庆键合科技有限责任公司 | Radiator and radiating structure of semiconductor power module |
| CN213988873U (en) * | 2020-12-10 | 2021-08-17 | 上能电气股份有限公司 | Power device heat radiation structure and dc-to-ac converter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782504A (en) * | 2021-09-08 | 2021-12-10 | 中国矿业大学 | Simplified packaging structure of power module of integrated radiator and manufacturing method |
| CN116741766A (en) * | 2023-08-16 | 2023-09-12 | 广东汇芯半导体有限公司 | Intelligent power module device and manufacturing method thereof |
| CN116741766B (en) * | 2023-08-16 | 2023-11-21 | 广东汇芯半导体有限公司 | Manufacturing method of intelligent power module device |
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