CN112485090A - Method for testing copper content of silicon wafer - Google Patents

Method for testing copper content of silicon wafer Download PDF

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Publication number
CN112485090A
CN112485090A CN202011405857.3A CN202011405857A CN112485090A CN 112485090 A CN112485090 A CN 112485090A CN 202011405857 A CN202011405857 A CN 202011405857A CN 112485090 A CN112485090 A CN 112485090A
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silicon wafer
copper content
content value
target
standard
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谭继东
郭恺辰
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/44—Sample treatment involving radiation, e.g. heat
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention provides a method for testing the copper content of a silicon wafer. The method for testing the copper content of the silicon wafer comprises the following steps: removing an oxide layer on the surface of the target silicon wafer; heating the target silicon wafer at a preset temperature for a preset time, wherein the preset temperature is 100-500 ℃, and the preset time is 10-300 minutes; after the target silicon wafer is cooled, measuring the surface copper content value of the target silicon wafer; and determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer. According to the embodiment of the invention, the silicon wafer is heated, so that copper in the silicon wafer can be diffused to the surface of the silicon wafer, and the copper content value of the silicon wafer is further determined according to the surface copper content value of the silicon wafer, so that the copper content in the silicon wafer can be relatively accurately measured.

Description

Method for testing copper content of silicon wafer
Technical Field
The invention relates to the technical field of silicon wafer detection, in particular to a method for testing copper content of a silicon wafer.
Background
The silicon wafer is usually used as a substrate of an integrated circuit, metal pollutants may exist in the silicon wafer, alkali metals such as sodium, potassium, calcium, magnesium, barium and the like can reduce the breakdown voltage of the integrated circuit, transition metals or heavy metals such as iron, chromium, nickel, copper, manganese, lead and the like can shorten the service life of the integrated circuit, or dark current during operation is increased, so that the content of the metal in the silicon wafer needs to be detected. The related technology has lower accuracy for detecting the copper content in the silicon chip.
Disclosure of Invention
The embodiment of the invention provides a method for testing the copper content of a silicon wafer, which aims to solve the problem of low accuracy of detection of the copper content in the silicon wafer.
The embodiment of the invention provides a method for testing the copper content of a silicon wafer, which comprises the following steps:
removing an oxide layer on the surface of the target silicon wafer;
heating the target silicon wafer at a preset temperature for a preset time, wherein the preset temperature is 100-500 ℃, and the preset time is 10-300 minutes;
after the target silicon wafer is cooled, measuring the surface copper content value of the target silicon wafer;
and determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer.
In some embodiments, the target silicon wafer comprises a silicon wafer to be tested and a standard silicon wafer, wherein the standard silicon wafer is a pre-manufactured silicon wafer with a known copper content value;
the determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer comprises the following steps:
acquiring the corresponding relation between the surface copper content value and the copper content value of the standard silicon wafer;
and calculating the copper content value of the silicon wafer to be detected according to the surface copper content value of the silicon wafer to be detected and the corresponding relation.
In some embodiments, the obtaining the correspondence between the surface copper content value and the copper content value of the standard silicon wafer comprises:
calculating a target proportional relation between the copper content value and the surface copper content value of the standard silicon wafer;
and taking the target proportional relation as the corresponding relation between the surface copper content value and the copper content value of the target silicon wafer.
In some embodiments, the calculating the copper content value of the silicon wafer to be tested according to the surface copper content value of the silicon wafer to be tested and the corresponding relationship includes:
and taking the product of the surface copper content value of the silicon wafer to be detected and the ratio as the copper content value of the silicon wafer to be detected.
In some embodiments, the number of the standard silicon wafers is multiple, and the copper content values of the standard silicon wafers are not equal;
the calculating of the target proportional relation of the copper content value and the surface copper content value of the standard silicon wafer comprises the following steps:
selecting a standard silicon wafer with the surface copper content value closest to the silicon wafer to be detected as a reference silicon wafer;
and calculating the proportional relation between the copper content value and the surface copper content value of the reference silicon wafer as the target proportional relation.
In some embodiments, the number of the standard silicon wafers is multiple, and the copper content values of the standard silicon wafers are not equal;
the obtaining of the corresponding relationship between the surface copper content value of the standard silicon wafer and the copper content value in the standard silicon wafer comprises:
determining a first silicon wafer with the surface copper content closest to the silicon wafer to be detected in a standard silicon wafer with the surface copper content value larger than the silicon wafer to be detected;
determining a second silicon wafer with the surface copper content closest to the silicon wafer to be detected in the standard silicon wafer with the surface copper content value smaller than the silicon wafer to be detected;
and establishing a functional relation between the copper content value and the copper content value of the surface of the target silicon wafer as the corresponding relation through difference operation according to the copper content values and the surface copper content values of the first silicon wafer and the second silicon wafer.
In some embodiments, the removing the oxide layer on the surface of the target silicon wafer includes:
corroding the target silicon wafer by using corrosive liquid, wherein the corrosive liquid comprises hydrofluoric acid;
and washing the target silicon wafer by using deionized water and drying.
In some embodiments, the preset temperature is 100 to 200 degrees celsius, and/or the preset time period is 120 to 300 minutes.
The method for testing the copper content of the silicon wafer comprises the following steps: removing an oxide layer on the surface of the target silicon wafer; heating the target silicon wafer at a preset temperature for a preset time, wherein the preset temperature is 100-500 ℃, and the preset time is 10-300 minutes; after the target silicon wafer is cooled, measuring the surface copper content value of the target silicon wafer; and determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer. According to the embodiment of the invention, the silicon wafer is heated, so that copper in the silicon wafer can be diffused to the surface of the silicon wafer, and the copper content value of the silicon wafer is further determined according to the surface copper content value of the silicon wafer, so that the copper content in the silicon wafer can be relatively accurately measured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a flowchart of a method for testing copper content of a silicon wafer according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a method for testing the copper content of a silicon wafer, which comprises the following steps:
step 101: and removing the oxide layer on the surface of the target silicon wafer.
It should be understood that silicon reacts with oxygen to form an oxide layer on the surface of the silicon wafer, which affects the subsequent reaction process, and therefore, the oxide layer on the surface of the silicon wafer needs to be removed in advance.
In one embodiment, the step 101 specifically includes:
corroding the target silicon wafer by using corrosive liquid, wherein the corrosive liquid comprises hydrofluoric acid;
and washing the target silicon wafer by using deionized water and drying.
In this embodiment, hydrofluoric acid capable of reacting with silicon dioxide is used as an etchant to remove hydrofluoric acid on the surface of the target silicon wafer, then deionized water is used to clean the target silicon wafer to remove residual hydrofluoric acid on the surface of the target silicon wafer, and finally, the silicon wafer is naturally dried or dried in a drying chamber, so that pretreatment of the silicon wafer is completed.
Step 102: and heating the target silicon wafer at a preset temperature for a preset time.
And then, heating the silicon wafer, wherein the copper has higher solid solubility in the silicon wafer body, the migration rate of the copper in the silicon wafer can be increased by raising the temperature, and meanwhile, the surface of the silicon wafer has lower potential energy due to the change of the Fermi level of the copper and potential energy difference, so that the copper can be well diffused to the surface of the silicon wafer under low-temperature heating.
In order to diffuse copper in the target silicon wafer to the surface of the target silicon wafer, the heating temperature cannot be too high, in this embodiment, the preset heating temperature is 100 to 500 degrees celsius, and the preset time period is 10 to 300 minutes.
In a preferred embodiment, the preset temperature is 100 to 200 degrees celsius, and/or the preset time period is 120 to 300 minutes, which can improve the diffusion effect of copper in the target silicon wafer to the surface of the target silicon wafer.
Step 103: and after the target silicon wafer is cooled, measuring the surface copper content value of the target silicon wafer.
After the target silicon wafer is cooled, the surface copper content value of the surface of the silicon wafer is detected, and the surface copper content value of the surface of the target silicon wafer can be measured by an existing or improved method such as ICP-MS (Inductively coupled plasma mass spectrometry).
Step 104: and determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer.
In this embodiment, the copper content of the target silicon wafer refers to the total copper content in the target silicon wafer. It should be understood that the copper diffused to the surface of the target wafer is not all of the copper in the target wafer, and therefore, the target wafer is detected to have a surface copper content value less than the copper content value of the target wafer.
In some embodiments, the copper content of the target wafer is only approximately estimated, and the surface copper content of the target wafer can be preliminarily considered as the copper content of the target wafer, that is, the measured surface copper content of the target wafer can be used as the copper content of the target wafer.
In other embodiments, the surface copper content value of the target wafer may be compensated, for example, the surface copper content value of the target wafer may be multiplied by a scaling factor to serve as an estimated value for the copper content value of the target wafer.
The expansion coefficient may be a coefficient greater than 1, for example, a coefficient greater than 1, such as 1.05, 1.1, 1.2, etc., and the expansion coefficient may be set empirically or may be set by counting the test results and analyzing the test results.
According to the embodiment of the invention, the silicon wafer is heated, so that copper in the silicon wafer can be diffused to the surface of the silicon wafer, and the copper content value of the silicon wafer is further determined according to the surface copper content value of the silicon wafer, so that the copper content in the silicon wafer can be relatively accurately measured.
In some embodiments, the determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer comprises:
acquiring the corresponding relation between the surface copper content value and the copper content value of the standard silicon wafer;
and calculating the copper content value of the silicon wafer to be detected according to the surface copper content value of the silicon wafer to be detected and the corresponding relation.
In this embodiment, the target silicon wafer includes a to-be-measured silicon wafer and a standard silicon wafer, where the standard silicon wafer is a pre-manufactured silicon wafer with a known copper content value, and the to-be-measured silicon wafer refers to a silicon wafer in which the copper content needs to be measured.
In this embodiment, a standard silicon wafer may be manufactured in advance, so that the copper content of the standard silicon wafer is known, and in implementation, the standard silicon wafer and the silicon wafer to be tested are tested simultaneously by the same means, and the surface copper content value of the standard silicon wafer and the surface copper content value of the silicon wafer to be tested are obtained respectively.
Because the copper content value of the standard silicon wafer is known, the amount of copper in the standard silicon wafer diffused to the surface can be determined by comparing and analyzing the corresponding relation between the copper content value and the surface copper content value of the standard silicon wafer, and correspondingly, the copper content value of the silicon wafer to be detected estimated through the surface copper content value of the silicon wafer to be detected can be compensated and corrected according to the corresponding relation, so that the accurate copper content value of the silicon wafer to be detected is obtained.
In one embodiment, a standard silicon wafer can be prepared by the following method.
Firstly, a silicon wafer substrate is selected, and a silicon wafer with no copper or extremely low copper content is selected as the silicon wafer substrate, it should be understood that, unlike the industrial mass production process, in the test process, a silicon wafer with no copper or extremely low copper content can be prepared as the silicon wafer substrate by a relatively high-cost process or method, and the preparation method can refer to the related art, and is not further limited and described herein.
Next, a copper solution was dropped on the silicon wafer base material, and the silicon wafer base material on which the metal solution was dropped was dried.
In one embodiment, 0.5001g of pure copper is weighed first, then a certain amount of nitric acid and sulfuric acid are added, nitrogen oxides are boiled to remove, and after cooling, the volume is increased to 500 ml, so that 1000 micrograms per ml of copper standard mother liquor can be obtained. The copper standard mother solution can be further diluted to obtain copper standard solutions with different concentrations.
The copper solution may be added dropwise to the surface of the silicon wafer substrate by a pipette or other liquid transfer device. Since the concentration of the copper solution is known, the volume of the copper solution added dropwise can also be accurately measured, and therefore, the copper content of the copper solution added dropwise to the surface of the silicon wafer substrate can be accurately determined.
After the copper solution was dropped on the surface of the silicon wafer substrate, the silicon wafer substrate was dried.
After the copper solution on the silicon wafer is dried, the silicon wafer substrate is heated at a preset temperature for a preset time, and copper can be diffused into the silicon wafer substrate by heating the silicon wafer substrate.
Further, the content of the residual copper on the surface of the silicon wafer substrate is detected, and the residual copper on the surface of the silicon wafer substrate is removed, so that the standard silicon wafer can be obtained.
In this example, the heating temperature of the silicon wafer substrate was higher than the above-described diffusion temperature of copper out of the target silicon wafer.
It should be understood that during the low temperature heating process, copper tends to diffuse towards the surface of the silicon wafer, while in the present embodiment, the heating temperature is higher, and the copper content on the surface of the silicon wafer substrate is much greater than the copper content in the silicon wafer substrate, so that during the heating process, copper diffuses into the silicon wafer substrate.
In the process, the heating temperature of the silicon wafer substrate is 500-1000 ℃, the heating time is 10-300 minutes, and the copper can be ensured to have a good diffusion effect in the silicon wafer substrate.
In this embodiment, since the concentration of the copper solution is known, the volume of the copper solution added dropwise can be accurately measured, so that the copper content in the copper solution can be calculated and obtained, and is referred to as the first copper content.
In the process of manufacturing the silicon wafer sample, a part of metal can be diffused into the silicon wafer substrate, but a part of metal still remains on the surface of the silicon wafer substrate, and the copper content remaining on the surface of the silicon wafer substrate can be obtained by detecting the copper content remaining on the surface of the silicon wafer substrate and is recorded as the second copper content. In practice, the second copper content of the surface of the silicon wafer substrate can be measured by ICP-MS and the like.
And finally, subtracting the residual copper content on the surface of the silicon wafer substrate from the first copper content to obtain an accurate value expanded to the copper content of the silicon wafer substrate, and recording the accurate value as a third copper content.
In the testing process, the silicon wafer to be tested and the standard silicon wafer are tested through the steps 101 to 103 under the same experimental conditions, and the surface copper content value of the silicon wafer to be tested and the surface copper content value of the standard silicon wafer are respectively obtained.
The copper content value of the standard silicon wafer is equal to the third copper content, and the amount of copper in the target silicon wafer diffused to the surface of the silicon wafer can be determined according to the copper content value of the standard silicon wafer and the surface copper content value of the standard silicon wafer, so that the copper content value of the silicon wafer to be detected is compensated according to the corresponding relation, and the copper content value of the silicon wafer to be detected can be accurately estimated.
In some embodiments, the obtaining the correspondence between the surface copper content value and the copper content value of the standard silicon wafer comprises:
calculating a target proportional relation between the copper content value and the surface copper content value of the standard silicon wafer;
and taking the target proportional relation as the corresponding relation between the surface copper content value and the copper content value of the target silicon wafer.
In some embodiments, the calculating the copper content value of the silicon wafer to be tested according to the surface copper content value of the silicon wafer to be tested and the corresponding relationship includes:
and taking the product of the surface copper content value of the silicon wafer to be detected and the ratio as the copper content value of the silicon wafer to be detected.
In this embodiment, a target proportional relation between the copper content value and the surface copper content value of the standard silicon wafer is calculated, and the target proportional relation is a ratio of the copper content value and the surface copper content value of the standard silicon wafer.
In this embodiment, it is considered that under the same experimental conditions, the proportions of copper in each target silicon wafer diffusing to the target surface are the same, so that the copper content value of the silicon wafer to be measured can be estimated further according to the surface copper content value of the silicon wafer to be measured and the proportions.
The inventor of the present application further finds that, in the technical scheme for implementing the present application, when the copper concentrations in the silicon wafers are different, the proportions of copper diffused to the surfaces of the silicon wafers are different, while the copper contents in the silicon wafer to be measured and the standard silicon wafer may have a certain difference, and when the sizes of the silicon wafer to be measured and the standard silicon wafer are the same, the copper concentrations of the silicon wafer to be measured and the standard silicon wafer are different, which may cause the proportions of copper diffused to the surfaces of the silicon wafer to be measured and the standard silicon wafer to be still have a certain difference.
In some embodiments, the number of the standard silicon wafers is multiple, and the copper content values of the standard silicon wafers are not equal;
the calculating of the target proportional relation of the copper content value and the surface copper content value of the standard silicon wafer comprises the following steps:
selecting a standard silicon wafer with the surface copper content value closest to the silicon wafer to be detected as a reference silicon wafer;
and calculating the proportional relation between the copper content value and the surface copper content value of the reference silicon wafer as the target proportional relation.
In the embodiment, a plurality of standard silicon wafers are selected, the copper content in the standard silicon wafers is different from each other, the surface copper content value of each standard silicon wafer is obtained during testing, and then the standard silicon wafer closest to the surface copper content value of the silicon wafer to be tested is selected as the reference silicon wafer, so that the copper content difference between the reference silicon wafer and the silicon wafer to be tested is minimum, the copper diffusion proportion between the reference silicon wafer and the silicon wafer to be tested to the surface is also closest, and the copper content in the silicon wafer to be tested is estimated according to the diffusion proportion of the reference silicon wafer, so that the accuracy of calculation of the copper content value of the silicon wafer to be tested can be improved.
In some embodiments, the number of the standard silicon wafers is multiple, and the copper content values of the standard silicon wafers are not equal;
the obtaining of the corresponding relationship between the surface copper content value of the standard silicon wafer and the copper content value in the standard silicon wafer comprises:
determining a first silicon wafer with the surface copper content closest to the silicon wafer to be detected in a standard silicon wafer with the surface copper content value larger than the silicon wafer to be detected;
determining a second silicon wafer with the surface copper content closest to the silicon wafer to be detected in the standard silicon wafer with the surface copper content value smaller than the silicon wafer to be detected;
and establishing a functional relation between the copper content value and the copper content value of the surface of the target silicon wafer as the corresponding relation through difference operation according to the copper content values and the surface copper content values of the first silicon wafer and the second silicon wafer.
In another embodiment, two standard silicon chips are selected from the plurality of standard silicon chips. It can be understood that the surface copper content value of the selected first silicon wafer is greater than that of the silicon wafer to be detected, and there is no standard silicon wafer with the surface copper content between the first silicon wafer and the silicon wafer to be detected, the surface copper content value of the selected second silicon wafer is less than that of the silicon wafer to be detected, and there is no standard silicon wafer with the surface copper content between the second silicon wafer and the silicon wafer to be detected.
And further, a function which takes the surface copper content value as an independent variable and the copper content value as an operation result is established according to the first silicon chip and the second silicon chip through difference calculation, so that a functional relation between the surface copper content value and the copper content value is obtained, and finally, the surface copper content value of the silicon chip to be tested is substituted into the obtained function, so that a more accurate estimation value of the silicon chip to be tested can be obtained.
Because the relationship between the surface copper content values of the two standard silicon wafers and the copper content value is introduced, the accuracy of calculating the copper content of the silicon wafer to be measured can be improved.
It should be understood that the copper content in the silicon wafer to be measured can be preliminarily estimated, and in practice, a plurality of standard silicon wafers with gradient copper content can be set for the estimated value, that is, when the standard silicon wafers are arranged in sequence according to the copper content, the difference between the copper content of two adjacent standard silicon wafers is equal, and the more standard silicon wafers are set, the more the copper content of the silicon wafer to be measured is estimated, the more accurate the copper content of the silicon wafer to be measured is.
In another embodiment, the functional relationship between the surface copper content value and the copper content value can also be obtained by fitting the relationship between the surface copper content value and the copper content value of a plurality of standard silicon wafers.
By introducing more surface copper content values and copper content values of the standard silicon wafer, a certain calculated amount can be increased, but a more accurate functional relation between the surface copper content values and the copper content values can be obtained, and the accuracy of calculation of the copper content of the silicon wafer to be measured is further improved.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (8)

1. A method for testing the copper content of a silicon wafer is characterized by comprising the following steps:
removing an oxide layer on the surface of the target silicon wafer;
heating the target silicon wafer at a preset temperature for a preset time, wherein the preset temperature is 100-500 ℃, and the preset time is 10-300 minutes;
after the target silicon wafer is cooled, measuring the surface copper content value of the target silicon wafer;
and determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer.
2. The method according to claim 1, wherein the target silicon wafer comprises a silicon wafer to be tested and a standard silicon wafer, wherein the standard silicon wafer is a pre-manufactured silicon wafer with a known copper content value;
the determining the copper content value of the target silicon wafer according to the surface copper content value of the target silicon wafer comprises the following steps:
acquiring the corresponding relation between the surface copper content value and the copper content value of the standard silicon wafer;
and calculating the copper content value of the silicon wafer to be detected according to the surface copper content value of the silicon wafer to be detected and the corresponding relation.
3. The method according to claim 2, wherein the obtaining the correspondence between the surface copper content value and the copper content value of the standard silicon wafer comprises:
calculating a target proportional relation between the copper content value and the surface copper content value of the standard silicon wafer;
and taking the target proportional relation as the corresponding relation between the surface copper content value and the copper content value of the target silicon wafer.
4. The method as claimed in claim 3, wherein the target proportional relationship comprises a ratio of a copper content value of the standard silicon wafer to a surface copper content value, and the calculating the copper content value of the silicon wafer to be tested according to the surface copper content value of the silicon wafer to be tested and the corresponding relationship comprises:
and taking the product of the surface copper content value of the silicon wafer to be detected and the ratio as the copper content value of the silicon wafer to be detected.
5. The method according to claim 3 or 4, wherein the number of the standard silicon wafers is plural, and the copper content values of the standard silicon wafers are not equal;
the calculating of the target proportional relation of the copper content value and the surface copper content value of the standard silicon wafer comprises the following steps:
selecting a standard silicon wafer with the surface copper content value closest to the silicon wafer to be detected as a reference silicon wafer;
and calculating the proportional relation between the copper content value and the surface copper content value of the reference silicon wafer as the target proportional relation.
6. The method according to claim 2, wherein the number of the standard silicon wafers is plural, and the copper content values of the standard silicon wafers are not equal;
the obtaining of the corresponding relationship between the surface copper content value of the standard silicon wafer and the copper content value in the standard silicon wafer comprises:
determining a first silicon wafer with the surface copper content closest to the silicon wafer to be detected in a standard silicon wafer with the surface copper content value larger than the silicon wafer to be detected;
determining a second silicon wafer with the surface copper content closest to the silicon wafer to be detected in the standard silicon wafer with the surface copper content value smaller than the silicon wafer to be detected;
and establishing a functional relation between the copper content value and the copper content value of the surface of the target silicon wafer as the corresponding relation through difference operation according to the copper content values and the surface copper content values of the first silicon wafer and the second silicon wafer.
7. The method according to any one of claims 1 to 4, wherein the removing the oxide layer on the surface of the target silicon wafer comprises:
corroding the target silicon wafer by using corrosive liquid, wherein the corrosive liquid comprises hydrofluoric acid;
and washing the target silicon wafer by using deionized water and drying.
8. The method according to any one of claims 1 to 4, wherein the preset temperature is 100 to 200 degrees Celsius and/or the preset time period is 120 to 300 minutes.
CN202011405857.3A 2020-12-03 2020-12-03 Method for testing copper content of silicon wafer Pending CN112485090A (en)

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