CN112457009A - Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material - Google Patents

Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material Download PDF

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CN112457009A
CN112457009A CN202011266677.1A CN202011266677A CN112457009A CN 112457009 A CN112457009 A CN 112457009A CN 202011266677 A CN202011266677 A CN 202011266677A CN 112457009 A CN112457009 A CN 112457009A
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mass fraction
isostatic pressing
hot isostatic
tungsten oxide
doping source
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高明
张虎
张花蕊
杨本润
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Beijing Hangda Micro Technology Co ltd
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Abstract

The invention relates to a hot isostatic pressing sintering preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps: preparing raw materials: the mixed powder comprises high-purity tungsten oxide and doping source powder, wherein the doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is more than 99.95 percent, the average grain diameter is 500-1800 nm, and the grain diameter of D50 is 200-750 nm; m1、M2、M3、M4、M5The quantitative relationship of (a) corresponds to the formula:
Figure DDA0002776291880000011
powder filling and vacuum degassing; sintering by hot isostatic pressing; taking out the sintered blank after heat preservation; with or without machining as required. The hot isostatic pressing sintering preparation method can prepareThe tungsten oxide-based ceramic target material has good conductivity, higher purity, fine grain size and high density.

Description

Hot isostatic pressing sintering preparation method of tungsten oxide-based ceramic target material
Technical Field
The invention relates to a preparation method of a ceramic target material, in particular to a hot isostatic pressing sintering preparation method of an n-type tungsten oxide-based ceramic target material.
Background
Tungsten trioxide is oneThe important n-type tungsten oxide semiconductor has important application in the fields of gas sensitive materials, photocatalysis, new energy and the like. Tungsten trioxide is an anode electrochromic material with excellent performance, a tungsten trioxide ceramic target material is prepared into a micron and submicron photoelectric film through magnetron sputtering, and the micron and submicron photoelectric film is compounded into a film photoelectric device, so that the tungsten trioxide ceramic target material has wide application prospects in the fields of large-screen display, high-density information storage and the like. In contrast to organic photochromic films, WO3The film has good stability and low cost. Doping certain elements into WO3The lattice defect density can be effectively improved in the crystal lattice, and the recombination process of electrons after light excitation is inhibited, so that the number of photon-generated carriers participating in the color change process is increased, and the WO is greatly improved3Photochromic properties of (1).
The magnetron sputtering process cannot leave the high-performance magnetron sputtering target, and from the aspect of coating process performance, the purity of the tungsten oxide-based ceramic target in the prior art is not high and is generally below 99.9 percent, and simultaneously, the tungsten oxide-based ceramic target does not contain doping elements or the amount of the doping elements is not in an optimal range, so the conductivity is not good, and only high-cost radio frequency sputtering equipment can be adopted; meanwhile, the crystal grain size is too large and uneven, so that the film coating process is unstable, the phenomenon of sparking and reverse sputtering is serious, the thickness of the film is uneven, the electrical property of the film is poor, the dyeing property is unstable, and the film-making cost is too high; and the density of the target is also lower, and the coating process is unstable and the performance of the coating is poor due to the too low density of the target.
Therefore, a tungsten oxide-based ceramic target material with good conductivity, high purity, fine grain size and high density is required for the wide application of the tungsten oxide film. However, the tungsten oxide-based ceramic target material cannot be prepared in the prior art.
Disclosure of Invention
The invention aims to solve the technical problem of providing a hot isostatic pressing sintering preparation method for preparing a tungsten oxide-based ceramic target material with good conductivity, high purity, fine grain size and high density aiming at the current situation of the prior art.
The technical scheme adopted by the invention for solving the technical problems is as follows: the hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material is characterized by comprising the following steps of:
A. preparing raw materials: the mixed powder comprises high-purity tungsten oxide and doping source powder, wherein the doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is more than 99.95 percent, the average grain diameter is 500-1800 nm, and the grain diameter of D50 is 200-750 nm; definition M1The mass fraction of powder particles in a 50-100nm particle size range, M2Is 100-400nm granularity segment powder particle mass fraction, M3The mass fraction of powder particles in a 400-plus-700 nm particle size section, M4The mass fraction of powder particles in the 700nm-1 mu M particle size section, M5The mass fraction of powder particles in the particle size section of more than 1 mu M, M1、M2、M3、M4、M5The quantitative relationship of (a) corresponds to the formula:
Figure BDA0002776291860000021
b, filling the mixed powder prepared in the step A into a hot isostatic pressing sheath die through a vibrating filler, wherein the frequency of the vibrating filler is 10-50 Hz;
c, performing vacuum degassing on the sheath at the degassing temperature of 450-600 ℃, and preserving the heat for 1-5 h;
d, carrying out hot isostatic pressing treatment on the sheath: the pressure is 50-200MPa, the hot isostatic pressing temperature is 550-; preferably, the pressure is 70-150MPa, the sintering temperature is 750-950 ℃, the heat preservation time is 1.5-4.5h, and the temperature rise speed is 1.0-2.5 ℃/min; further preferably, the pressure is 100MPa, the sintering temperature is 900 ℃, the heat preservation time is 2.5h, and the temperature rise speed is 1.5 ℃/min.
E, cooling, removing pressure, taking out the sheath and obtaining a sintered blank;
and F, machining or not machining to the designed size according to the requirement to obtain the target finished product.
Preferably, the frequency of the vibrating filler in the step B is 20-40 Hz;
preferably, the frequency of the vibrating filler in the step B is 30 Hz.
Preferably, the pressure of the hot isostatic pressing sintering in the step D is 80-180MPa, the hot isostatic pressing temperature is 650-1100 ℃, the heat preservation time is 2.5-4.5 hours, and the temperature rise speed is 1.0-2.5 ℃/min.
Preferably, the pressure of the hot isostatic pressing sintering in the step D is 150MPa, the hot isostatic pressing temperature is 1050 ℃, the heat preservation time is 4 hours, and the temperature rise speed is 1.5 ℃/min.
Preferably, the average particle size of the mixed powder prepared from the raw material in the step A is 600-1500nm, and the particle size of D50 is 300-650 nm; further preferably, the average particle size is 800-1200nm, and the D50 particle size is 350-500 nm.
Preferably, the total mass fraction of the doping source elements in the mixed powder prepared from the raw materials in the step A is 10-40%. Further preferably, the total mass fraction of the doping source elements in the mixed powder is 10-30%.
Preferably, the mass fraction of the Ti element is in the range of 0 to 15%, the mass fraction of the Mo element is in the range of 0 to 15%, the mass fraction of the V element is in the range of 0 to 10%, the mass fraction of the Al element is in the range of 0 to 2%, the mass fraction of the Li element is in the range of 0 to 2%, and the mass fraction of the Zr element is in the range of 0 to 2%.
Further preferably, the mass fraction of the Ti element is in the range of 1 to 12%, the mass fraction of the Mo element is in the range of 1 to 12%, the mass fraction of the V element is in the range of 0.5 to 10%, the mass fraction of the Al element is in the range of 0.1 to 2%, the mass fraction of the Li element is in the range of 0.1 to 2%, and the mass fraction of the Zr element is in the range of 0.1 to 2%.
Further preferably, the mass fraction of the Ti element is in the range of 5 to 10%, the mass fraction of the Mo element is in the range of 5 to 10%, the mass fraction of the V element is in the range of 1 to 10%, the mass fraction of the Al element is in the range of 0.1 to 0.8%, the mass fraction of the Li element is in the range of 0.1 to 1.5%, and the mass fraction of the Zr element is in the range of 0.2 to 2%.
Preferably, the doping source component proportion is selected from one of the following groups:
a first group: the doping source elements are Mo, Li and Zr, and the mass fraction ranges of Mo are 5-10%, Li is 0.1-1.5% and Zr is 0.2-2%;
second group: the doping source elements are Ti, Mo and Zr, and the mass fraction ranges of Ti 5-10%, Mo 5-10% and Zr 0.3-2%;
third group: the doping source elements are Li, Al and Zr, and the mass fraction ranges of Li 1-2%, Al 0.1-1% and Zr 0.3-2%;
and a fourth group: the doping source elements are Mo, V and Al, and the mass fraction ranges of Mo 5-10%, V1-10% and Al 0.1-0.8%;
and a fifth group: the doping source elements are Ti, V, Zr and Al, and the mass fraction ranges of the doping source elements are 5-10% of Ti, 1-10% of V, 0.2-2% of Zr and 0.2-0.8% of Al;
a sixth group: the doping source elements are Mo, Ti, V and Zr, the mass fraction ranges of Mo 5-10%, Ti 5-10%, V3-6% and Zr 0.5-2%,
a seventh group: the doping source elements are Mo, Li, Ti, Al and Zr, and the mass fraction ranges of Mo are 5-10%, Li is 1-2%, Ti is 5-10%, Al is 0.2-0.8% and Zr is 0.5-2%.
Further preferably, the doping source component is selected from one of the following groups according to a molar ratio:
a first group: mo: li: zr (0-10): (0-15): (0-2);
second group: ti: mo: zr (0-15): (0-10): (0-2);
third group: li: al: zr (0-15): (0-2): (0-2);
and a fourth group: mo: v: al (0-10): 0-2;
and a fifth group: ti: v: zr: al (0-15): 0-10): 0-2;
a sixth group: mo: ti: v: zr (0-10): 0-15): 0-10): 0-2);
a seventh group: mo: li: ti: al: zr (0-10), (0-15), (0-2).
Further preferably, the doping source component is selected from one of the following groups according to a molar ratio:
a first group: mo: li: zr (1-8): (2-12): (0.2-1.5)
Second group: ti: mo: zr (1-12) to (1-8) to (0.2-1.5);
third group: li: al: zr (2-12) (0.1-1.8) (0.2-1.5);
and a fourth group: mo: v: al is (1-8): (1-8): 0.1-1.8;
and a fifth group: ti: v: zr: al (1-12), (1-8), (0.2-1.5), (0.1-1.8);
a sixth group: mo: ti: v: zr (1-8): (1-12): (1-8): (0.2-1.5)
A seventh group: mo: li: ti: al: zr (1-8): (2-12): (1-12): (0.1-1.8): (0.2-1.5).
Further preferably, the doping source component is selected from one of the following groups according to a molar ratio:
a first group: mo: li: zr 5:10:1
Second group: ti: mo: zr is 10:5: 1;
third group: li: al: zr is 10:1: 1;
and a fourth group: mo: v: al is 5:5: 1;
and a fifth group: ti: v: zr: al is 10:5:1: 1;
a sixth group: mo: ti: v: zr-5: 10:5:1
A seventh group: mo: li: ti: al: zr is 5:10:10:1: 1.
Compared with the prior art, the invention has the advantages that:
1. the mixed powder used in the invention contains nano and submicron powder granularity, and has wider granularity distribution, and M1、M2、M3、M4、M5The quantitative relationship of (a) corresponds to the formula:
Figure BDA0002776291860000041
can obtain more than 1.4 g.cm-3The high bulk density of the sintered ceramic blank improves the sintering performance and is beneficial to obtaining the high-density ceramic sintered blank through the hot isostatic pressing process.
2. By doping n-type doping elements such as Li, Ti, Mo, V, Al, Zr and the like into the tungsten trioxide perovskite structure, the concentration and the mobility of current carriers in tungsten trioxide can be improved, lattice collapse is promoted, the atom mismatching degree is improved, the n-type conductivity of the material is improved, meanwhile, a low-melting-point compound is easily formed, the sintering activity is improved, and the material density is improved.
3. And step D, selecting the following parameters: the pressure is 50-200MPa, the sintering temperature is 550-.
The pressure is 50-200MPa, certain pressure is favorable for full contact of powder particles, a compact structure is formed after sintering, too low pressure can cause too low density of a sintered blank, and too high pressure can cause excessive growth of crystal grains and influence the stability of equipment.
The sintering temperature is 550-1150 ℃, the optimal combination of grain size and density can be obtained at a proper sintering temperature, the ceramic is under-sintered due to too low temperature, the grain is not sufficiently grown, the density is too low, the grain size is too large due to too high temperature, the situation of ceramic decomposition is likely to occur, oxygen vacancies are generated, and the density is reduced.
The heating speed is 0.5-3 ℃/min, the ceramic sintering blank is uniformly heated in the whole process at a proper heating speed, the process time is prolonged by the excessively slow heating speed, and the cost is increased. The overall temperature distribution of the sintered blank is uneven due to the overhigh temperature rise speed, the temperature of the core part is too low, the inner part is not burnt, and the overall density is uneven.
4. In order to obtain a more compact ceramic structure, the powder is added into the hot isostatic pressing sheath in a vibration filling mode, so that the powder can be compactly filled in the sheath, no cavity is generated, the integral components of the ceramic sintered blank after hot isostatic pressing are uniform, and no internal defect exists.
Therefore, the tungsten oxide-based ceramic target material finally prepared by the invention comprises the following components in parts by weight: the purity is more than 99.95 percent, the average grain size is 1-10 mu m, no obvious doped phase exists, the density is more than 98 percent, and the conductivity is more than 15S/cm. The ceramic target material has good conductivity, so that the film prepared by using the target material also has good conductivity, and industrial application of an n-type transparent conductive film, an electrochromic film and the like which need to use the conductivity of a tungsten oxide film becomes possible; in addition, in terms of coating process performance, the target material has high conductivity, low-cost direct current sputtering equipment can be directly adopted, and the film-making cost is reduced; the grain size is reduced, the distribution of the doped phase is uniform, the density of the target material is improved, the coating process is stable, the phenomenon of sparking and back sputtering is prevented, the thickness of the film is more uniform, the strength of the ceramic structure is improved, the target material can bear higher power density during sputtering, and faster deposition rate is obtained.
Drawings
FIG. 1 is a photomicrograph of a powder of example 1 of the present invention;
FIG. 2 is a powder XRD pattern of example 1 of the present invention;
FIG. 3 is a PSD diagram of the powder of example 1 of the present invention;
FIG. 4 is an electron micrograph of a ceramic of example 1 of the present invention;
FIG. 5 is an electron micrograph of a ceramic of example 2 of the present invention;
FIG. 6 is an electron micrograph of a ceramic of example 3 of the present invention;
FIG. 7 is an electron micrograph of a ceramic of example 4 of the present invention;
FIG. 8 is an electron micrograph of a ceramic of example 5 of the present invention;
FIG. 9 is an electron micrograph of a ceramic of example 6 of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The doped tungsten oxide powders of the following examples were prepared by the following method:
(a) preparing a premixed solution: fully dissolving pure water, organic monomer and cross-linking agent according to the weight ratio of 100 (7-12) to 0.7-1.2 to form a premixed solution;
(b) preparing slurry: adding tungstate with the purity of more than or equal to 99.99% and doping source powder into the premixed solution to prepare slurry with the solid phase content of 30-70%, adding 1-3 wt% of dispersing agent, adjusting the pH value to 8-10, and performing wet ball milling dispersion;
(c) and (3) gel forming: pouring the slurry into a mold, adding an initiator for crosslinking and curing, controlling the curing temperature to be 40-70 ℃ and the humidity to be 50-70%, and drying to obtain a wet blank;
(d) and (3) calcining: calcining the wet blank at the temperature of 750-850 ℃, wherein the temperature rise speed is not higher than 2 ℃/min, and obtaining a biscuit;
(e) crushing and granulating: pulverizing the biscuit with air flow, pre-crushing to obtain micron-sized powder, and dry-grinding for 2-20hr at 1000R/min at 100-;
(f) sieving: and sieving the primary tungsten oxide-based powder by a sieve of 40-80 meshes to obtain secondary tungsten oxide-based powder, namely the finished product powder.
Preferably, the organic monomer for preparing the premix in step (a) is any one or a combination of acrylamide, polyvinyl alcohol and polyacrylic acid, and the cross-linking agent is any one or a combination of N-N' methylene bisacrylamide, polyethylene glycol and polyethylene glycol dimethacrylate; analytically pure ammonium metatungstate or ammonium paratungstate is selected as the tungstate of the slurry prepared in the step (b), and the dispersing agent is any one of JA281, ammonium citrate and polyvinyl alcohol; the initiator for gel forming in the step (c) is any one of ammonium persulfate, azodiimidazoline propane, azodiimidazole propane hydrochloride and hydrogen peroxide.
Preferably, the particle size of the ball milling dispersed grinding balls in the step (b) is 0.3-10mm, the ball-material ratio is 1.5-4, the ball milling time is 2-20hr, and the rotating speed is 150-.
Example 1
Firstly, preparing doped submicron tungsten oxide-based powder:
1) preparing raw materials: ammonium metatungstate with the purity of more than or equal to 99.99% and the doping source element components of the embodiment are Mo: li: zr is 5:10: 1; preparing MoO with corresponding element proportion2、Li2O、ZrO2Doping source powder with the purity more than or equal to 99.99 percent; the mass ratio of the added ammonium metatungstate to the doping source powder is 87: 13.
the doping source powder can purchase other simple substance metals, alloy inorganic salts and organic salts of corresponding elements, and the effect is similar.
2) Preparing a premixed solution, and fully dissolving pure water, organic monomer acrylamide and a cross-linking agent N 'N' -methylene bisacrylamide in a weight ratio of 100:10:1 to form the premixed solution;
3) preparing slurry: adding the pure ammonium metatungstate and the doping source powder prepared in the step 1) into the premixed liquid to prepare 50% solid content slurry, adding 2 wt% of ammonium citrate dispersant, adjusting the pH value to 9.5 by adopting tetramethylammonium hydroxide, and dispersing by adopting ball milling, wherein the average particle size of a milling ball is 1mm, and the ball-to-material ratio is 2: 1;
4) and (3) gel forming: pouring the slurry into a mold, adding an initiator ammonium persulfate to perform crosslinking curing at the curing temperature of 60 ℃ and controlling the humidity at 50%, and drying to obtain a wet blank;
5) and (3) calcining: calcining the dried wet blank at 800 ℃, wherein the heating rate is 1.5 ℃/min, and obtaining a biscuit;
6) crushing and granulating: pulverizing the biscuit with air flow to obtain micron-sized particles, and dry-grinding at 200R/min for 10hr to obtain primary tungsten oxide-based powder;
7) sieving: and (3) sieving the primary tungsten oxide-based powder by a 60-mesh standard sieve to obtain secondary tungsten oxide-based powder, namely submicron-grade doped tungsten oxide-based finished powder.
The purity of the prepared submicron-grade doped tungsten oxide-based powder is 99.99%, the mass fraction of tungsten trioxide in the powder is 85%, and the balance is a doping source oxide, wherein the doping source element components are Mo: li: zr is 5:10: 1.
The powder micrograph is shown in figure 1, the powder XRD spectrum is shown in figure 2, the powder PSD spectrum is shown in figure 3, and the average particle size of the submicron doped tungsten oxide powder prepared in the example is 1.0 mu M, the particle size of D50 is 500nm, and the particle size of M in the example is obtained from the figure1At 4%, M 220% of M 330% of, M 440% of M5Is 6%, according to the formula
Figure BDA0002776291860000061
The bulk density of the powder of this example was > 1.4g·cm-3。
Secondly, preparing doped tungsten oxide based ceramics
1) Filling the mixed powder weighed in the step one into a sheath die in a vibration filling mode, wherein the vibration frequency is 30 Hz;
2) vacuum degassing is carried out on the sheath, the degassing temperature is 500 ℃, and the temperature is kept for 3 h;
3) and (3) carrying out hot isostatic pressing treatment on the clad: the pressure is 100MPa, the sintering temperature is 900 ℃, the heat preservation time is 2.5h, the heating speed is 1.5 ℃/min, and the pressure source is nitrogen;
4) cooling, removing pressure, removing the sheath and obtaining a sintered blank;
5) and (4) machining or not machining to the designed size according to the requirement to obtain the target finished product.
The relative density is measured by a drainage method to be 99.5 percent, the average grain size is 3 mu m, the doping elements enter the ceramic crystal lattice, no obvious second phase exists, the conductivity of the ceramic body is measured by cutting samples to be 25S/cm, the microstructure is uniform, and the micro-anoxic state is achieved.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 4.
Example 2
The difference between the present example and example 1 is that the mass fraction of the tungsten component in the powder calculated by tungsten oxide is 85%, the mass fraction of the doping source is 15%, and the doping source component is, in terms of mole ratio, Ti: mo: zr is 10:5: 1;
the rest steps are the same as the example 1, the obtained tungsten oxide-based ceramic has the relative density of 98.5 percent measured by a drainage method, the average grain size is 4.5 mu m, the doping elements enter the ceramic crystal lattice, no obvious second phase exists, and the conductivity of the ceramic body is 15S/cm measured by cutting samples.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 5.
Example 3
Firstly, preparing doped submicron tungsten oxide-based powder:
1) preparing raw materials: preparing ammonium metatungstate with the purity of more than or equal to 99.99 percent, wherein the doping source element components of the embodiment are Ti: mo: zr is 10:1: 1; preparing titanium oxide, molybdenum oxide and zirconium oxide doping source powder with corresponding element proportion, wherein the purity is more than or equal to 99.999 percent; the mass ratio of the added ammonium metatungstate to the doping source powder is 92.2: 7.8.
the doping source powder can purchase other simple substance metals, alloy inorganic salts and organic salts of corresponding elements, and the effect is similar.
2) Preparing a premixed solution, namely mixing pure water and an organic monomer which is the combination of polyvinyl alcohol and polyacrylic acid, wherein the ratio of the polyvinyl alcohol to the polyacrylic acid is 1:1, and a cross-linking agent which is the combination of polyethylene glycol and polyethylene glycol dimethacrylate, wherein the ratio of the polyethylene glycol to the polyethylene glycol dimethacrylate is 1: 1; fully dissolving pure water, organic monomer and cross-linking agent in a weight ratio of 100:11:1.1 to form a premixed solution;
3) preparing slurry: adding the pure ammonium metatungstate and the doping source powder prepared in the step 1) into the premixed liquid to prepare slurry with the solid content of 45%, adding 0.05 wt% of ammonium citrate dispersant, adjusting the pH value to 10 by adopting ammonia water, and performing ball milling dispersion, wherein the average particle size of a milling ball is 1.5mm, and the ball-to-material ratio is 2: 1;
4) and (3) gel forming: pouring the slurry into a mold, adding an initiator azodiimidazoline propane for crosslinking and curing, controlling the curing temperature at 60 ℃ and the humidity at 60%, and drying to obtain a wet blank;
5) and (3) calcining: calcining the dried wet blank at 750 ℃ at the heating rate of 1.0 ℃/min to obtain a biscuit;
6) crushing and granulating: jet milling the biscuit, pre-milling the biscuit into micron-sized particles, and dry-milling the micron-sized particles at 1000R/min for 2hr to obtain primary tungsten oxide-based powder;
7) sieving: and (3) sieving the primary tungsten oxide-based powder by a 60-mesh standard sieve to obtain secondary tungsten oxide-based powder, namely submicron-grade doped tungsten oxide-based finished powder.
The purity of the prepared submicron-grade doped tungsten oxide-based powder is 99.99%, the mass fraction of tungsten trioxide in the powder is 90%, and the balance is doping source oxide, wherein the doping source element components are Ti: mo: zr is 10:1: 1.
The submicron doped tungsten oxide powder prepared by the embodimentAverage particle size 0.8 μ M, D50 particle size 400nm, M in this example1At 5%, M235% of M315% of M435% of M5Is 10%, and meets the formula
Figure BDA0002776291860000081
The bulk density of the powder of this example was > 1.4 g.cm-3。
Secondly, preparing doped tungsten oxide based ceramics
1) Filling the mixed powder weighed in the step one into a sheath die in a vibration filling mode, wherein the vibration frequency is 10 Hz;
2) vacuum degassing is carried out on the sheath, wherein the degassing temperature is 500 ℃ in a vacuum furnace, and the temperature is kept for 3 h;
3) and (3) carrying out hot isostatic pressing treatment on the clad: the pressure is 150MPa, the sintering temperature is 1100 ℃, the heat preservation time is 3h, and the heating speed is 1 ℃/min; the pressure source in this embodiment is nitrogen.
4) Cooling and removing pressure after the heat preservation time is reached; taking the sheath out of the furnace chamber, removing the sheath and taking out the sintered blank;
5) and cleaning the sintered blank, and machining to a designed size to obtain a ceramic target finished product.
The obtained tungsten oxide-based ceramic has the relative density of 98.2 percent and the average grain size of 5 mu m measured by a drainage method, doping elements enter a ceramic crystal lattice, no obvious second phase exists, and the conductivity of the ceramic body is 22S/cm measured by cutting samples.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 6.
Example 4
This example differs from example 3 in that the doping sources used were molybdenum oxide, vanadium oxide and aluminum oxide, and the doping source components of the preparation step were, in terms of mole ratios, Mo: v: al is 5:5: 1;
the obtained ceramic target finished product has the relative density of 98.0 percent, the average grain size of 3.5 mu m, doping elements enter ceramic crystal lattices, no obvious second phase exists, and the bulk conductivity is 18S/cm, which is measured by a drainage method.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 7.
Example 5
Firstly, preparing doped submicron tungsten oxide-based powder:
1) preparing raw materials: preparing ammonium metatungstate with the purity of more than or equal to 99.99 percent, wherein the doping source element components of the embodiment are Ti: v: zr: al is 10:5:1: 1; preparing titanium oxide, molybdenum oxide and zirconium oxide doping source powder with corresponding element proportion, wherein the purity is more than or equal to 99.999 percent; the mass ratio of the added ammonium metatungstate to the doping source powder is 87: 13
The doping source powder can purchase other simple substance metals, alloy inorganic salts and organic salts of corresponding elements, and the effect is similar.
2) Preparing a premixed solution, and fully dissolving pure water, organic monomer polyacrylic acid and cross-linking agent polyethylene glycol in a weight ratio of 100:12:1.2 to form the premixed solution;
3) preparing slurry: adding the pure ammonium metatungstate prepared in the step 1) and the doping source powder into the premixed solution to prepare slurry with the solid content of 50%, adding 0.1 wt% of JA281 dispersant, adjusting the pH value to 9.5 by using ammonia water, and performing ball milling dispersion, wherein the average particle size of grinding balls is 2mm, and the ball-to-material ratio is 2: 1;
4) and (3) gel forming: pouring the slurry into a mold, adding an initiator azodimidepropane hydrochloride for crosslinking and curing, wherein the curing temperature is 65 ℃, the humidity is controlled at 70%, and drying to obtain a wet blank;
5) and (3) calcining: calcining the dried wet blank at 700 ℃, and heating at a speed of 1.0 ℃/min to obtain a biscuit;
6) crushing and granulating: pulverizing the biscuit with air flow to obtain primary pulverized micrometer powder, and dry-grinding at 500R/min for 10hr to obtain primary tungsten oxide-based powder;
7) sieving: and (3) sieving the primary tungsten oxide-based powder by a 60-mesh standard sieve to obtain secondary tungsten oxide-based powder, namely submicron-grade doped tungsten oxide-based finished powder.
The purity of the prepared submicron-grade doped tungsten oxide-based powder is 99.99%, the mass fraction of tungsten trioxide in the powder is 85%, and the balance is doping source oxide, wherein the doping source element components are Ti: v: zr: al is 10:5:1: 1.
The submicron doped tungsten oxide powder prepared in this example has an average particle size of 1.0 μ M, the particle size of D50 is 550nm, and M in this example1At 5%, M235% of M 320% of M425% of M5Is 15%, and meets the formula
Figure BDA0002776291860000091
The bulk density of the powder of this example was > 1.4 g.cm-3。
Secondly, preparing doped tungsten oxide-based ceramic:
1) filling the mixed powder weighed in the step one into a sheath die in a vibration filling mode, wherein the vibration frequency is 50 Hz;
2) vacuum degassing is carried out on the sheath, wherein the degassing temperature is 450 ℃ in a vacuum furnace, and the temperature is kept for 5 hours;
3) and (3) carrying out hot isostatic pressing treatment on the clad: the pressure is 50MPa, the sintering temperature is 800 ℃, the heat preservation time is 1h, and the heating rate is 1.5 ℃/min
4) Cooling after the heat preservation time is reached, removing the pressure, taking the sheath out of the furnace chamber, removing the sheath, and taking out the sintered blank;
5) and cleaning the sintered blank, and machining to a designed size to obtain a ceramic target finished product.
The obtained tungsten oxide-based ceramic has the relative density of 98.5 percent and the average grain size of 4 mu m measured by a drainage method, doping elements enter a ceramic crystal lattice, no obvious second phase exists, and the conductivity of the ceramic body is 20S/cm measured by cutting samples.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 8.
Example 6
The difference between this example and example 5 is that molybdenum oxide, titanium oxide, vanadium oxide and zirconium oxide are used as the doping source, the mass fraction of tungsten calculated as tungsten oxide is 80%, the mass fraction of the doping source is 20%, and the doping source component in the preparation step is Mo: ti: v: zr is 5:10:5: 1;
the obtained ceramic target finished product has the relative density of 98.3 percent and the average grain size of 3.5 mu m measured by a drainage method, the doping elements enter a ceramic crystal lattice, no obvious second phase exists, and the bulk conductivity is 21S/cm.
An electron micrograph of the ceramic prepared in this example is shown in FIG. 9.
The technical means disclosed in the invention scheme are not limited to the technical means disclosed in the above embodiments, but also include the technical scheme formed by any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and such improvements and modifications are also considered to be within the scope of the present invention.

Claims (10)

1. A hot isostatic pressing sintering preparation method of a tungsten oxide-based ceramic target material is characterized by comprising the following steps:
preparing raw materials: the mixed powder comprises high-purity tungsten oxide and doping source powder, wherein the doping source is selected from at least three of Ti, Mo, V, Al, Li and Zr, the purity of the mixed powder is more than 99.95 percent, the average grain diameter is 500-1800 nm, and the grain diameter of D50 is 200-750 nm; definition M1The mass fraction of powder particles in a 50-100nm particle size range, M2Is 100-400nm granularity segment powder particle mass fraction, M3The mass fraction of powder particles in a 400-plus-700 nm particle size section, M4The mass fraction of powder particles in the 700nm-1 mu M particle size section, M5The mass fraction of powder particles in the particle size section of more than 1 mu M, M1、M2、M3、M4、M5The quantitative relationship of (a) corresponds to the formula:
Figure FDA0002776291850000011
b, filling the mixed powder prepared in the step A into a hot isostatic pressing sheath die through a vibrating filler, wherein the frequency of the vibrating filler is 10-50 Hz;
c, performing vacuum degassing on the sheath;
d, hot isostatic pressing sintering: the pressure is 50-200MPa, the hot isostatic pressing temperature is 550-;
e, cooling, removing pressure, taking out the sheath and obtaining a sintered blank;
and F, machining or not machining to the designed size according to the requirement to obtain the target finished product.
2. The hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material according to claim 1, characterized in that: vacuum degassing of the step C: the degassing temperature is 450 ℃ and 600 ℃, and the temperature is kept for 1-5 h.
3. The hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material according to claim 1, characterized in that: d, the pressure of hot isostatic pressing sintering in the step D is 70-150MPa, the sintering temperature is 750-; .
4. The hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material according to claim 1, characterized in that: and D, the pressure of hot isostatic pressing sintering in the step D is 100MPa, the sintering temperature is 900 ℃, the heat preservation time is 2.5h, and the temperature rise speed is 1.5 ℃/min.
5. The hot isostatic pressing sintering production method of a tungsten oxide-based ceramic target material according to any one of claims 1 to 4, characterized in that: the average particle size of the mixed powder prepared by the raw material in the step A is 800-1200nm, and the particle size of D50 is 350-500 nm.
6. The hot isostatic pressing sintering production method of a tungsten oxide-based ceramic target material according to any one of claims 1 to 4, characterized in that: and the total mass fraction of doping source elements in the mixed powder prepared by the raw materials in the step A is 10-30%.
7. The hot isostatic pressing sintering production method of a tungsten oxide-based ceramic target material according to any one of claims 1 to 4, characterized in that: the mass fraction range of the Ti element, the mass fraction range of the Mo element, the mass fraction range of the V element, the mass fraction range of the Al element, the mass fraction range of the Li element and the mass fraction range of the Zr element prepared from the raw materials of the step A are respectively 0-15%, 0-10%, 0-2% and 0-2%.
8. The hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material according to claim 7, characterized in that: the mass fraction of the Ti element is in the range of 1-12%, the mass fraction of the Mo element is in the range of 1-12%, the mass fraction of the V element is in the range of 0.5-10%, the mass fraction of the Al element is in the range of 0.1-2%, the mass fraction of the Li element is in the range of 0.1-2%, and the mass fraction of the Zr element is in the range of 0.1-2%.
9. The hot isostatic pressing sintering production method of a tungsten oxide-based ceramic target material according to any one of claims 1 to 4, characterized in that: the component proportion of the doping source is selected from one of the following groups:
a first group: the doping source elements are Mo, Li and Zr, and the mass fraction ranges of Mo are 5-10%, Li is 0.1-1.5% and Zr is 0.2-2%;
second group: the doping source elements are Ti, Mo and Zr, and the mass fraction ranges of Ti 5-10%, Mo 5-10% and Zr 0.3-2%;
third group: the doping source elements are Li, Al and Zr, and the mass fraction ranges of Li 1-2%, Al 0.1-1% and Zr 0.3-2%;
and a fourth group: the doping source elements are Mo, V and Al, and the mass fraction ranges of Mo 5-10%, V1-10% and Al 0.1-0.8%;
and a fifth group: the doping source elements are Ti, V, Zr and Al, and the mass fraction ranges of the doping source elements are 5-10% of Ti, 1-10% of V, 0.2-2% of Zr and 0.2-0.8% of Al;
a sixth group: the doping source elements are Mo, Ti, V and Zr, the mass fraction ranges of Mo 5-10%, Ti 5-10%, V3-6% and Zr 0.5-2%,
a seventh group: the doping source elements are Mo, Li, Ti, Al and Zr, and the mass fraction ranges of Mo are 5-10%, Li is 1-2%, Ti is 5-10%, Al is 0.2-0.8% and Zr is 0.5-2%.
10. The hot isostatic pressing sintering preparation method of the tungsten oxide-based ceramic target material according to claim 9, characterized in that: the doping source component is selected from one of the following groups according to a molar ratio:
a first group: mo: li: zr (0-10): (0-15): (0-2);
second group: ti: mo: zr (0-15): (0-10): (0-2);
third group: li: al: zr (0-15): (0-2): (0-2);
and a fourth group: mo: v: al (0-10): 0-2;
and a fifth group: ti: v: zr: al (0-15): 0-10): 0-2;
a sixth group: mo: ti: v: zr (0-10): 0-15): 0-10): 0-2);
a seventh group: mo: li: ti: al: zr (0-10), (0-15), (0-2).
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