CN112448263A - Laser chip device and laser - Google Patents
Laser chip device and laser Download PDFInfo
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- CN112448263A CN112448263A CN201910802940.5A CN201910802940A CN112448263A CN 112448263 A CN112448263 A CN 112448263A CN 201910802940 A CN201910802940 A CN 201910802940A CN 112448263 A CN112448263 A CN 112448263A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The embodiment of the invention provides a laser chip device, which comprises a chip layer; the chip arrangement further comprises: the heat-conducting layer is in contact with the chip layer, and the first heat-radiating shell is used for placing the chip layer and the heat-conducting layer inside; the chip device further comprises a refrigerator, and the refrigerator is in contact connection with the outer wall of the first heat dissipation shell. In the above structure, the chip device is disposed in the first heat dissipation housing and is combined with the refrigerator, so that the temperature can be easily controlled, and the temperature can be controlled within a reasonable working temperature range, such as-20 ℃ to-10 ℃. In addition, in the structure, the heat conduction layer can adopt silicon carbide with low cost, and compared with the structure adopting diamond as a heat conduction material, the cost can be greatly reduced.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a laser chip device and a laser.
Background
In the technical field of Optical-pumped semiconductor (OPS) intracavity frequency doubling ultraviolet lasers, a refrigeration mode of a semiconductor chip generally adopts high-purity diamond for heat conduction, so that the cost is very high. This prior art is already disclosed by US 20110064099. In the patent, the structure comprises a QW chip, a heat conducting medium and a heat sink, the heat sink and the heat conducting medium have good thermal contact, so that heat conduction is realized, and the heat conducting structure adopts diamond material for heat conduction, so that the cost is very high. On the other hand, the thermal expansion coefficient of diamond is not very matched with that of the semiconductor material, the relatively complicated optical bonding process is involved, the temperature of the semiconductor chip is controlled within a certain temperature range, such as the range of minus 20 ℃ to 10 ℃, and the temperature control is not easy to realize by the structure.
In addition, in the existing ultraviolet laser produced by OPS and combining with the frequency conversion technology, the fundamental frequency emission wavelength of a semiconductor chip is 890 nm-1120 nm, fundamental frequency light (infrared) passes through a first nonlinear crystal, second harmonic (visible) is produced after frequency doubling, the fundamental frequency light and the second harmonic pass through a second nonlinear crystal, and third harmonic (ultraviolet) is produced after frequency summation, and after twice frequency conversion, the energy conversion efficiency is lower, and the coating cost of the resonant cavity mirror is higher. This prior art is disclosed in US10177524, in which a pump light pump radiation pumped QW chip generates infrared fundamental light with a wavelength of 920nm, a second harmonic with a wavelength of 460nm is generated through a nonlinear crystal, fundamental light 920nm and frequency doubled light 460nm are passed through a nonlinear crystal and a third harmonic with a wavelength of 307nm is generated, as shown in fig. 1A.
In addition, the existing all-solid-state ultraviolet laser mainly adopts a laser gain medium (such as Nd: YAG) which generates 1064nm fundamental frequency light to pass through a first nonlinear crystal, generates 532nm (visible) second harmonic after frequency multiplication, and generates 355nm (ultraviolet) third harmonic after frequency multiplication, wherein the 1064nm fundamental frequency light and the 532nm second harmonic pass through a second nonlinear crystal. Furthermore, the second harmonic of 532nm passes through the second nonlinear crystal, and the fourth harmonic of 266nm (ultraviolet) is generated after frequency multiplication. Through two frequency conversions, the energy conversion efficiency is low, and the coating cost of the resonant cavity mirror is high. In addition, the solid laser gain medium generates a fixed laser line, and thus, the application field thereof is limited. This prior art, us patent CN107946891A, has disclosed that in this technique, a pump laser crystal generates fundamental frequency light with a wavelength of 1064nm, a nonlinear crystal generates a second harmonic with a wavelength of 532nm, and the fundamental frequency light 1064nm and frequency doubling light 532nm generate a third harmonic with a wavelength of 355nm through a sum frequency of the nonlinear crystal.
Disclosure of Invention
In the invention, the heat-conducting medium of the semiconductor chip adopts diamond for heat conduction, so the cost is very high, and meanwhile, the thermal expansion coefficient of the diamond is not matched with that of the semiconductor material very much, and the optical bonding process is relatively complicated. In order to solve the above technical problems, embodiments of the present invention provide a laser chip device, so as to solve the problems that the laser chip device in the prior art has high heat conduction cost and is not easy to implement temperature control.
According to a first aspect of embodiments of the present invention, there is provided a laser chip device, comprising a chip layer; the chip arrangement further comprises: the heat-conducting layer is in contact with the chip layer, and the first heat-radiating shell is used for placing the chip layer and the heat-conducting layer inside;
the chip device further comprises a refrigerator, and the refrigerator is in contact connection with the outer wall of the first heat dissipation shell.
Optionally, the chip device further includes a second heat dissipation housing, and the first heat dissipation housing and the refrigerator are disposed inside the second heat dissipation housing.
Optionally, the refrigerator is disposed with its lower surface contacting the bottom wall of the second heat dissipation case, and the first heat dissipation case is disposed with its upper surface contacting the refrigerator.
Optionally, the chip device further includes a sealed cavity formed between the first heat dissipation housing and the second heat dissipation housing, and the sealed cavity is filled with dry gas.
Optionally, the top wall of the second heat dissipation housing is provided with an opening and a window sheet matched and sealed with the opening.
Optionally, a light hole is formed in the top wall of the first heat dissipation housing.
Optionally, the lower surface of the heat conduction layer is optically attached to the upper surface of the chip layer, and the upper surface of the heat conduction layer is in contact with the top wall of the first heat dissipation housing.
Optionally, the heat conducting layer is silicon carbide.
Optionally, the first heat dissipation housing and the second heat dissipation housing are both copper heat dissipation housings.
Optionally, the chip layer includes a base layer, a quantum well layer, and a reflective layer disposed therebetween.
According to a second aspect of embodiments of the present invention, there is provided a laser, comprising a light source; the laser also comprises the chip device and a pumping device matched with the chip device.
Optionally, the pumping device includes a parabolic reflector with a light through hole at the center, and the chip device is disposed on the central axis of the concave side of the parabolic reflector and opposite to the light through hole; the pumping arrangement further comprises a first mirror and a second mirror arranged symmetrically with respect to the central axis of the paraboloid such that a first ray reflected back to the paraboloid mirror via the chip arrangement is reflected back to the paraboloid mirror via the first mirror and the second mirror again.
Optionally, the pumping device further includes a third mirror and a fourth mirror symmetrically disposed with respect to the central axis, so that the second light reflected back to the parabolic mirror via the chip device is reflected back to the parabolic mirror again via the third mirror and the fourth mirror.
Optionally, the pumping device further includes a fifth mirror and a sixth mirror symmetrically disposed with respect to the central axis, so that the third light reflected back to the parabolic mirror via the chip device is reflected back to the parabolic mirror again via the fifth mirror and the sixth mirror.
Optionally, the pumping device further includes a seventh mirror disposed perpendicular to the central axis, so that a fourth light ray reflected back to the parabolic mirror via the chip device impinges on the seventh mirror at an incident angle of 0 degrees.
Optionally, the pumping device further includes a collimator, and light emitted from the light source is incident on the parabolic mirror through the collimator.
In an embodiment of the present invention, a laser chip device includes a chip layer; the chip arrangement further comprises: the heat-conducting layer is in contact with the chip layer, and the first heat-radiating shell is used for placing the chip layer and the heat-conducting layer inside; the chip device further comprises a refrigerator, and the refrigerator is in contact connection with the outer wall of the first heat dissipation shell.
In the above structure, the chip device is disposed in the first heat dissipation housing and is combined with the refrigerator, so that the temperature can be easily controlled, and the temperature can be controlled within a reasonable working temperature range, such as-20 ℃ to-10 ℃. In addition, in the structure, the heat conduction layer can adopt silicon carbide with low cost, and compared with the structure adopting diamond as a heat conduction material, the cost can be greatly reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is an oblique side view of a laser chip apparatus shown in accordance with an exemplary embodiment of the present invention;
FIG. 2 is an oblique side view of a pumping device according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic front view of a pumping apparatus according to an exemplary embodiment of the present invention;
fig. 4 is a schematic front view of a laser according to an exemplary embodiment of the present invention.
The corresponding relations between the parts in fig. 1-4 and the reference numerals are as follows:
a chip device 1; a chip layer 101; a base layer 1011; a quantum well layer 1012; a reflective layer 1013; a thermally conductive layer 102; a refrigerator 103; a first heat dissipation case 104; a light-transmitting hole 1041; a second heat dissipation case 105; a window piece 106;
a pumping device 2; a parabolic mirror 201; a light-passing hole 2011; a first mirror 2021; a second mirror 2022; a third mirror 2023; a fourth mirror 2024; a fifth mirror 2025; a sixth mirror 2026; a seventh mirror 2027;
a light source 3;
a collimating mirror 4;
a second cavity mirror 5;
a third mirror 6;
a nonlinear crystal 7;
a birefringent filter 8.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is an oblique side view of a laser chip device 1 shown according to an exemplary embodiment of the present invention. As shown in fig. 1, the laser chip device 1 includes a chip layer 101; the chip arrangement 1 further comprises: a heat conductive layer 102 in contact with the chip layer 101, and a first heat dissipation case 104 in which the chip layer 101 and the heat conductive layer 102 are disposed; the chip arrangement 1 further comprises a refrigerator, which is contact-connected to the outer wall of the first heat dissipation housing 104.
In this configuration, the chip device 1 is placed in the first heat dissipation case 104 while being combined with a refrigerator, and thus can be easily controlled to a temperature within a reasonable operating temperature range, such as-20 ℃ to-10 ℃. In addition, in this structure, the heat conducting layer 102 can be made of silicon carbide with low cost, so that the cost can be greatly reduced compared with the case of using diamond as the heat conducting material.
In an embodiment of the present invention, as shown in fig. 1, the chip apparatus 1 further includes a second heat dissipation housing 105, and the first heat dissipation housing 104 and the refrigerator are disposed inside the second heat dissipation housing 105. Specifically, the refrigerator is disposed with its lower surface in contact with the bottom wall of the second heat dissipation case 105, and the first heat dissipation case 104 is disposed in contact with the upper surface of the refrigerator. The chip device 1 further includes a sealed cavity formed between the first heat dissipation case 104 and the second heat dissipation case 105, and the sealed cavity is filled with dry gas.
In the above structure, the second heat dissipation casing 105 is further disposed outside the first heat dissipation casing 104, and both are in contact with the refrigerator, so that the temperature can be controlled more easily, and heat is conducted from the optically bonded silicon carbide in the forward direction, thereby achieving a better heat dissipation effect. The gas in the closed cavity can be nitrogen, so that water vapor in the air can be removed, and therefore, water drops are prevented from being generated on the surface of the silicon carbide and the outer wall of the first shell, and the chip is prevented from being influenced to generate the fundamental frequency light.
In an embodiment of the present invention, the top wall of the second heat dissipation casing 105 is provided with an opening and a window plate 106 matching and sealing with the opening, and the top wall of the first heat dissipation casing 104 is provided with a light hole 1041.
In this structure, since the first heat dissipating housing 104 is provided with the light hole 1041 and the second heat dissipating housing 105 is provided with the window piece 106, the light reflected and focused by the parabolic mirror 201 can be focused on the chip layer 101 through the light hole 1041 and the window piece 106, so that the pump light can be incident and reflected through the light hole and the window piece, thereby laying a technical foundation for improving the utilization efficiency by using the pump light for many times.
Further, in an embodiment of the present invention, the lower surface of the heat conducting layer 102 is optically attached to the upper surface of the chip layer 101, and the upper surface of the heat conducting layer 102 is in contact with the top wall of the first heat dissipation case 104. In addition, the first heat dissipation shell 104 and the second heat dissipation shell 105 are both copper heat dissipation shells, and the heat conduction effect is better due to the structural design.
In an embodiment of the present invention, the chip layer 101 may be further described. Specifically, the chip layer 101 includes a base layer 1011, a quantum well layer 1012, and a reflective layer 1013 disposed therebetween.
In the present invention, to generate uv light by single frequency multiplication, the reflective layer 1013 may be a Distributed Bragg Reflector (DBR) layer 1013, and the quantum well layer 1012 may be a multi-layer quantum well region (QW). The semiconductor chip is prepared by epitaxial growth of a substrate material in sequence, and fundamental frequency light in a 650-710nm waveband can be generated under high quantum efficiency by adopting laser pumping in a wavelength range of 638-660 nm. The fundamental frequency light can realize intracavity frequency conversion to generate ultraviolet light through the frequency doubling effect of a nonlinear crystal 7.
Further, the SiC heat conducting medium in contact with the surface of the quantum well layer 1012 is an undoped pure wafer, after both surfaces are polished, a first surface of the SiC heat conducting medium is optically bonded (Optical Bonding) with the surface of the quantum well layer 1012, a second surface of the SiC heat conducting medium is plated with a pump light and fundamental frequency light wavelength antireflection film, and an edge region of the second surface is in contact with the first heat dissipation case 104. The base layer 1011 of the chip device 1 is in contact with the first heat dissipation housing 104, and the first heat dissipation housing 104 conducts heat to the upper surface of a refrigerator, which may be a semiconductor cooler (TEC). The lower surface of the refrigerator is in contact with the second heat dissipation case 105, and conducts heat to the second heat dissipation case 105. The first surface and the second surface of the window 106(window film) are coated with antireflection films for pump light and fundamental frequency light wavelength, and form a sealed cavity with the second heat dissipation case 105, and the sealed cavity is filled with dry nitrogen.
FIG. 2 is an oblique side view of a pumping device 2 according to an exemplary embodiment of the present invention; fig. 3 is a schematic front view of a pumping device 2 according to an exemplary embodiment of the present invention.
As shown in fig. 2 and 3, in one embodiment, a laser is provided, comprising a light source; the laser further comprises a chip arrangement 1 according to any of the embodiments described above, and a pumping arrangement 2 cooperating with the chip arrangement 1.
Specifically, as shown in fig. 2, the pumping device 2 includes a parabolic mirror 201 having a light through hole 2011 at the center, and the chip device 1 is disposed on the central axis of the concave side of the parabolic mirror 201 and opposite to the light through hole 2011; the pumping arrangement 2 further comprises a first 2021 and a second 2022 mirror symmetrically arranged with respect to the central axis of the paraboloid such that the first light rays reflected back to the parabolic mirror 201 via the chip arrangement 1 are reflected back to the parabolic mirror 201 again via the first 2021 and the second 202mirror 2022.
In this structure, since the first reflector 2021 and the second reflector 2022 are provided, the first light reflected back to the parabolic reflector 201 via the chip device 1 can be reflected back to the parabolic reflector 201 again and further reflected to the chip layer 101 again, so that the pump light is incident and reflected once more on the chip layer 101, thereby improving the utilization efficiency of the pump light.
In this structure, the pumping device 2 further includes a third reflector 2023 and a fourth reflector 2024 symmetrically disposed with respect to the central axis, so that the second light reflected back to the parabolic reflector 201 via the chip device 1 is reflected back to the parabolic reflector 201 again via the third reflector 2023 and the fourth reflector 2024.
In this structure, since the third reflector 2023 and the fourth reflector 2024 are disposed, the second light reflected back to the parabolic reflector 201 via the chip device 1 can be reflected back to the parabolic reflector 201 again, and then reflected again to the chip layer 101, so that the pump light is incident and reflected once more on the chip layer 101, thereby further improving the utilization efficiency of the pump light.
The pumping device 2 further comprises a fifth mirror 2025 and a sixth mirror 2026, which are symmetrically arranged with respect to the central axis, so that the third light ray reflected back to the parabolic mirror 201 via the chip arrangement 1 is reflected back to the parabolic mirror 201 again via the fifth mirror 2025 and the sixth mirror 2026.
In this kind of structural design, because the fifth reflector 2025 and the sixth reflector 2026 are provided, the third light reflected back to the parabolic reflector 201 via the chip device 1 can be reflected back to the parabolic reflector 201 again, and then reflected again to the chip layer 101, so that the pump light is incident and reflected again on the chip layer 101, and the utilization efficiency of the pump light is further improved again. To this end, the pump light has completed four times of incidence and reflection on the chip layer 101, i.e., the chip layer 101 has completed 8 times of absorption of the pump light.
The pumping arrangement 2 further comprises a seventh mirror 2027 arranged perpendicular to the central axis, such that the fourth light rays reflected back to the parabolic mirror 201 via the chip arrangement 1 impinge on the seventh mirror 2027 with an angle of incidence of 0 degrees.
In the above structural design, the incident angle of the pump light with respect to the seventh reflector 2027 is 0 °, the pump light returns from the seventh reflector 2027 as it is, and the pump light is incident and reflected on the chip layer 101 four times by the first reflector 2021 to the sixth reflector 2026, so that the pump light is absorbed 8 times again, thereby greatly improving the utilization efficiency of the pump light.
The pumping device 2 further comprises a collimator 4, and light emitted from the light source is incident on the parabolic reflector 201 via the collimator 4.
In the above structure design, as shown in fig. 2 and fig. 3, the pumping light source 3 can be a semiconductor laser with a wavelength range 638-. After the pump light output from the optical fiber passes through the collimator 4 with the focal length of 35mm, the collimated light is normally incident to the parabolic mirror 201 with the focal length of-30 mm. The parabolic mirror 201 reflects the collimated light onto the chip layer 101 to form a focused spot. The focused light spot is reflected back to the parabolic mirror through the reflective layer 1013 of the chip layer 101 (for convenience of distinction, the light reflected back to the parabolic mirror 201 by the chip layer 101 is defined as a first light), collimated light is formed again by the parabolic mirror 201 and is reflected onto the first mirror 2021, the incident angle of the light with respect to the first mirror 2021 is 45 °, and the light is reflected to the second mirror 2022 by the first mirror 2021 and is reflected to the parabolic mirror 201 by the second mirror 2022. Similar to the above process, the trajectory of the pump light is then reflected by the parabolic mirror 201 onto the chip layer 101 for the second time, reflected by the reflective layer 1013 of the chip layer 101 back to the parabolic mirror 201 for the second time (for the sake of convenience of distinction, the light reflected by the chip layer 101 back to the parabolic mirror 201 is defined as the second light), and reflected by the parabolic mirror to the third mirror 2023. Reflected by the third mirror 2023 to the fourth mirror 2024, reflected by the fourth mirror 2024 back to the parabolic mirror 201, reflected by the parabolic mirror 201 to the chip layer 101 for the third time, reflected by the reflective layer 1013 of the chip layer 101 back to the parabolic mirror 201 for the third time (for the sake of convenience of distinction, the light reflected by the chip layer 101 back to the parabolic mirror 201 is defined as the third light), and reflected by the parabolic mirror 201 to the fifth mirror 2025. The light beam reflected by the chip layer 101 to the parabolic mirror 201 is reflected by the fifth mirror 2025 to the sixth mirror 2026, reflected by the sixth mirror 2026 to the parabolic mirror 201, reflected by the parabolic mirror 201 to the chip layer 101 for the fourth time, reflected by the reflective layer 1013 of the chip layer 101 to the parabolic mirror 201 for the fourth time (for convenience of distinction, the light beam reflected by the chip layer 101 to the parabolic mirror 201 is defined as the fourth light beam), and reflected by the parabolic mirror 201 to the seventh mirror 2027. To this end, the pump light has been incident and reflected on the chip layer 101 for 4 times, that is, the chip layer 101 has completed 8 times of absorption of the pump light, the incident angle of the pump light with respect to the seventh mirror 2027 is 0 °, the pump light is returned by the seventh mirror 2027 as it is, and the chip layer 101 completes 8 times of absorption of the pump light again.
In the structural design of the invention, the OPS laser uses a low-cost red light semiconductor light source to realize the cost control of the pumping light source. The absorption rate of the quantum well chip to the pumping wavelength is low, and the multi-pass absorption pumping structure is designed, so that the high-efficiency utilization efficiency of the pumping light is realized on the premise of greatly reducing the cost.
Fig. 4 is a schematic front view of a laser according to an exemplary embodiment of the present invention.
As shown in fig. 4, the resonator structure of the OPS laser includes a first cavity mirror formed by the reflection layer 1013 of the chip layer 101, a second cavity mirror 5 (output cavity mirror), and a third cavity mirror 6 constituting a V-shaped resonator. The first cavity mirror is highly reflective to the pumping light and the fundamental frequency light. The curvature radius R of the second cavity mirror 5 may be 50mm, which is highly reflective to the fundamental light and highly transparent to the second harmonic (frequency doubling light). The curvature radius R of the third cavity mirror 6 is 25mm, and the third cavity mirror is highly reflective to fundamental frequency light and frequency doubling light. The resonant cavity comprises a nonlinear crystal 7 which is positioned between the second cavity mirror 5 and the third cavity mirror 6, the nonlinear crystal 7 can be 3x3x3mm3 BBO, the matching angle is 34.3 degrees, one phase is matched for frequency multiplication, and two light-passing surfaces are anti-reflection for fundamental frequency light and frequency multiplication light. The fundamental frequency light is subjected to frequency conversion in the nonlinear crystal 7 to generate second harmonic, and the second harmonic is output through the second cavity mirror 5. The resonant cavity also comprises a birefringent optical filter 8BF which is positioned between the first cavity mirror and the second cavity mirror 5, the birefringent optical filter 8 can be made of quartz crystal, the thickness of the birefringent optical filter is 3mm, the polarization direction PF of the light fundamental frequency light is parallel to the paper surface, the polarization direction is the polarization direction of BBO phase matching fundamental frequency light, the generated frequency doubling light and the polarization direction P2H of the fundamental frequency light are orthogonal, and the polarization direction of the frequency doubling light is vertical to the paper surface. Moreover, BF selects a desired fundamental wavelength of light, for example, 690nm by a rotation angle, and can control a line width of fundamental light within a certain range, and correspondingly can control a line width of frequency doubling light-345 nm within 5 nm.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (12)
1. A laser chip device includes a chip layer; characterized in that, the chip device further comprises: the heat-conducting layer is in contact with the chip layer, and the first heat-radiating shell is used for placing the chip layer and the heat-conducting layer inside;
the chip device also comprises a refrigerator which is in contact connection with the outer wall of the first heat dissipation shell;
the chip device also comprises a second heat dissipation shell, and the first heat dissipation shell and the refrigerator are arranged inside the second heat dissipation shell;
the refrigerator is disposed with its lower surface in contact with the bottom wall of the second heat dissipation case, and the first heat dissipation case is disposed in contact with the upper surface of the refrigerator.
2. The laser chip apparatus of claim 1, further comprising a sealed cavity formed between the first heat-dissipating housing and the second heat-dissipating housing, the sealed cavity filled with a dry gas.
3. A laser chip device as claimed in claim 1 or 2, wherein said thermally conductive layer is optically attached to said chip layer upper surface at a lower surface thereof, and an upper surface of said thermally conductive layer is in contact with said first heat dissipation housing top wall.
4. A laser chip device as claimed in claim 1 or 2, characterized in that said thermally conducting layer is silicon carbide.
5. The laser chip apparatus according to claim 1 or 2, wherein the first heat-dissipating housing and the second heat-dissipating housing are both copper heat-dissipating housings.
6. A laser chip device as claimed in claim 1 or 2, characterized in that the chip layer comprises a base layer, a quantum well layer and a reflective layer arranged therebetween.
7. A laser comprising a light source; characterized in that the laser further comprises a chip arrangement according to any one of claims 1 to 6, and a pumping arrangement cooperating with the chip arrangement.
8. The laser of claim 7, wherein the pumping means comprises a parabolic mirror having a light passing hole at the center, and the chip means is disposed on the central axis of the concave side of the parabolic mirror and opposite to the light passing hole; the pumping arrangement further comprises a first mirror and a second mirror arranged symmetrically with respect to the central axis of the paraboloid such that a first ray reflected back to the paraboloid mirror via the chip arrangement is reflected back to the paraboloid mirror via the first mirror and the second mirror again.
9. The laser of claim 8, wherein the pumping arrangement further comprises a third mirror and a fourth mirror symmetrically disposed with respect to the central axis such that the second ray reflected back to the parabolic mirror via the chip arrangement is reflected back to the parabolic mirror via the third mirror and the fourth mirror.
10. The laser of claim 9, wherein the pumping arrangement further comprises a fifth mirror and a sixth mirror symmetrically disposed with respect to the central axis such that third rays reflected back to the parabolic mirror via the chip arrangement are reflected back to the parabolic mirror via the fifth mirror and the sixth mirror again.
11. The laser of claim 10, wherein the pumping arrangement further comprises a seventh mirror disposed perpendicular to the central axis such that a fourth light ray reflected back to the parabolic mirror via the chip arrangement impinges on the seventh mirror at an incident angle of 0 degrees.
12. The laser of any of claims 7-11, wherein the pumping device further comprises a collimator lens, and wherein the light from the light source is incident on the parabolic mirror via the collimator lens.
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| CN201910802940.5A CN112448263A (en) | 2019-08-28 | 2019-08-28 | Laser chip device and laser |
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| CN201910802940.5A CN112448263A (en) | 2019-08-28 | 2019-08-28 | Laser chip device and laser |
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