CN112447879A - Processing method of diffusion high sheet resistance silicon wafer - Google Patents
Processing method of diffusion high sheet resistance silicon wafer Download PDFInfo
- Publication number
- CN112447879A CN112447879A CN201910834290.2A CN201910834290A CN112447879A CN 112447879 A CN112447879 A CN 112447879A CN 201910834290 A CN201910834290 A CN 201910834290A CN 112447879 A CN112447879 A CN 112447879A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- sheet resistance
- resistance silicon
- high sheet
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000009792 diffusion process Methods 0.000 title claims abstract description 44
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000000243 solution Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 4
- 235000011149 sulphuric acid Nutrition 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 description 22
- 210000002268 wool Anatomy 0.000 description 5
- 241000208340 Araliaceae Species 0.000 description 4
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 4
- 235000003140 Panax quinquefolius Nutrition 0.000 description 4
- 235000008434 ginseng Nutrition 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention provides a processing method of a diffusion high sheet resistance silicon wafer, which comprises the following steps of S1: placing the diffusion high sheet resistance silicon wafer into a mixed solution of H2SO4/HNO3/HF for secondary etching, wherein the etching depth is (1.0-1.2) um; s2: cleaning the etched high-sheet-resistance silicon wafer by using DI pure water; s3: removing the porous silicon structure on the surface of the high sheet resistance silicon wafer by using a KOH solution; s4: cleaning with DI pure water; s5: removing the oxide layer on the surface of the high sheet resistance silicon wafer by using an HF solution; s6: cleaning with DI pure water; s7: drying in a drying groove; s8: transferring the dried high sheet resistance silicon wafer to a diffusion process again for secondary diffusion, wherein the secondary diffusion temperature is 10-30 ℃ lower than that of the conventional diffusion process; s9: and carrying out secondary etching on the high sheet resistance silicon wafer subjected to secondary diffusion to improve the back polishing effect, and then transferring to a normal production process.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell production, in particular to a method for processing a diffused high-sheet-resistance silicon wafer.
Background
Solar cells are receiving wide attention all over the world as a new green and environmentally friendly energy source. The development of the global photovoltaic industry is very rapid, and the domestic photovoltaic industry is continuously developed and strengthened.
With the continuous development of the industry, the requirements of customers on the performance and the appearance of the battery plate are higher and higher, and low-wattage components and flower plate components are eliminated by the market. Enterprises can only survive in the market with ever decreasing production costs. And improving conversion efficiency is one of the most effective methods for reducing production cost.
The texturing process is the most important step in the cell production link, and aims to remove a damaged layer on the surface of a silicon wafer by utilizing the reaction of silicon, hydrofluoric acid and nitric acid mixed liquor, form a large and small uniform pit, reduce the surface reflectivity of the silicon wafer, increase the sunlight absorption and improve the number of carriers, thereby improving the conversion efficiency.
The diffusion process is followed by the texturing process, in the diffusion production process, the condition of diffusion high sheet resistance unqualified surface is frequently caused due to equipment abnormity or peripheral equipment flash, and secondary diffusion cannot be directly carried out due to the oxide on the surface of the diffused silicon wafer. The traditional treatment method returns to the first procedure for texturing again, the silicon wafer is thinned and the production cost is increased as a direct result caused by the method, in the process of texturing again, the fragment rate of the high-sheet-resistance silicon wafer is much higher than that of the conventionally produced silicon wafer, and the surface piece of the silicon wafer with unqualified high sheet resistance is subjected to secondary texturing to generate bright battery pieces, so that the short-circuit current and the short-circuit voltage are reduced, the conversion efficiency is reduced, and the production cost is increased.
Therefore, it is necessary for those skilled in the art to develop a method for processing a silicon wafer with high sheet resistance, so as to solve the various drawbacks of the prior art.
Disclosure of Invention
In view of the above, the present invention provides a processing method for diffusing a silicon wafer with high sheet resistance, which solves the problems existing in the prior art, and the specific scheme is as follows:
a processing method for a diffusion high sheet resistance silicon wafer comprises the following steps:
s1: putting the diffused high sheet resistance silicon wafer into H2SO4Performing secondary etching on the mixed solution of/HNO 3/HF, wherein the etching depth is (1.0-1.2) um;
s2: cleaning the etched high-sheet-resistance silicon wafer by using DI pure water;
s3: removing the porous silicon structure on the surface of the high sheet resistance silicon wafer by using a KOH solution;
s4: cleaning with DI pure water;
s5: removing the oxide layer on the surface of the high sheet resistance silicon wafer by using an HF solution;
s6: cleaning with DI pure water;
s7: drying in a drying groove;
s8: transferring the dried high sheet resistance silicon wafer to a diffusion process again for secondary diffusion, wherein the secondary diffusion temperature is 10-30 ℃ lower than that of the conventional diffusion process;
s9: and carrying out secondary etching on the high sheet resistance silicon wafer subjected to secondary diffusion to improve the back polishing effect, and then transferring to a normal production process.
Specifically, in the third step, an HF solution is used to replace a KOH solution to remove the porous silicon structure on the surface of the high sheet resistance silicon wafer.
In particular, the method comprises the following steps of,
in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO3The mass concentration is 300-350g/l, the mass concentration of H2SO4 is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percentage concentration of KOH in the KOH solution is 3-9%, the circulation flow is 20-30l/min, and the reaction temperature is 20-25 ℃;
in the step S8, the diffusion process temperature is set to 810-.
In particular, the method comprises the following steps of,
in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO3The mass concentration is 300-350g/l, the mass concentration of H2SO4 is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percent concentration of HF in the HF solution is 6% -12%, and the circulating flow rate is 90-150 l/min;
in the step S8, the diffusion process temperature is set to 810-.
Specifically, in the steps S2, S4, and S6, the circulation flow rate of DI pure water is 50-60L/min.
Specifically, in step S7, the temperature of the drying tub is 55 to 70 ℃.
The processing method of the diffusion high-sheet-resistance silicon wafer provided by the invention does not need secondary texturing, ensures the texturing surface of the silicon wafer, solves the problem of the appearance of the battery piece, and greatly improves the A-grade product rate of the battery. In the production process, because the wet etching is carried out twice, the back polishing effect (the reflectivity of the back of the silicon wafer is improved by increasing the wet etching amount) is improved, and the conversion efficiency is improved. Compared with the traditional secondary texturing processing method, the accumulative battery conversion efficiency of the method is improved by over 0.1 percent, and the A-grade product rate is improved by over 25 percent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a prior art high sheet resistance battery diffuser treatment.
Fig. 2 is a flow chart of a high sheet resistance battery diffuser treatment in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 2 is a processing flow chart of a high sheet resistance battery diffusion sheet in the scheme of the invention, and referring to fig. 2, the invention claims a processing method of a diffusion high sheet resistance silicon wafer, which comprises the following steps:
s1: putting the diffused high sheet resistance silicon wafer into H2SO4/HNO3Performing secondary etching on the mixed solution of/HF, wherein the etching depth is (1.0-1.2) um;
s2: cleaning the etched high-sheet-resistance silicon wafer by using DI pure water;
s3: removing the porous silicon structure on the surface of the high sheet resistance silicon wafer by using a KOH solution;
s4: cleaning with DI pure water;
s5: removing the oxide layer on the surface of the high sheet resistance silicon wafer by using an HF solution;
s6: cleaning with DI pure water;
s7: drying in a drying groove;
s8: transferring the dried high sheet resistance silicon wafer to a diffusion process again for secondary diffusion, wherein the secondary diffusion temperature is 10-30 ℃ lower than that of the conventional diffusion process;
s9: and carrying out secondary etching on the high sheet resistance silicon wafer subjected to secondary diffusion to improve the back polishing effect, and then transferring to a normal production process.
Specifically, in the third step, an HF solution is used to replace a KOH solution to remove the porous silicon structure on the surface of the high sheet resistance silicon wafer.
Specifically, in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO is added3The mass concentration is 300-350g/l, H2SO4The mass concentration of the catalyst is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percentage concentration of KOH in the KOH solution is 3-9%, the circulation flow is 20-30l/min, and the reaction temperature is 20-25 ℃;
in the step S8, the diffusion process temperature is set to 810-.
Specifically, in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO is added3The mass concentration is 300-350g/l, H2SO4The mass concentration of the catalyst is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percent concentration of HF in the HF solution is 6% -12%, and the circulating flow rate is 90-150 l/min;
in the step S8, the diffusion process temperature is set to 810-.
Specifically, in the steps S2, S4, and S6, the circulation flow rate of DI pure water is 50-60L/min.
Specifically, in step S7, the temperature of the drying tub is 55 to 70 ℃.
Experiment one: equally dividing 2000 pieces of unqualified diffusion sheet resistance surfaces, wherein the sheet resistance value is more than 110, directly inputting the first group of experiments from the wool making process by adopting the prior technical scheme, carrying out the experiments according to the technical scheme of the invention in the second group of experiments, and carrying out the following statistics on electric parameters
| Electric ginseng | Voltage of | Electric current | Series resistance | In parallel | Filling in | Average efficiency | Number of | Fraction of rejects |
| First group | 0.630 | 8.852 | 0.0024 | 254.44 | 80.12 | 18.31％ | 945 | 6.23％ |
| Second group | 0.631 | 8.917 | 0.0021 | 275.31 | 80.78 | 18.55％ | 970 | 1.89％ |
Experiment two: equally dividing 2000 pieces of unqualified diffusion sheet resistance surfaces, wherein the sheet resistance value is more than 110, directly inputting the first group of experiments from the wool making process by adopting the prior technical scheme, carrying out the experiments according to the technical scheme of the invention in the second group of experiments, and carrying out the following statistics on electric parameters
| Electric ginseng | Voltage of | Electric current | Series resistance | In parallel | Filling in | Average efficiency | Number of | Fraction of rejects |
| First group | 0.631 | 8.849 | 0.0024 | 254.44 | 80.02 | 18.36％ | 991 | 5.52％ |
| Second group | 0.633 | 8.898 | 0.0024 | 254.44 | 80.25 | 18.57％ | 985 | 2.38％ |
Experiment three: equally dividing 2000 pieces of unqualified diffusion sheet resistance surfaces, wherein the sheet resistance value is more than 110, directly inputting the first group of experiments from the wool making process by adopting the prior technical scheme, carrying out the experiments according to the technical scheme of the invention in the second group of experiments, and carrying out the following statistics on electric parameters
| Electric ginseng | Voltage of | Electric current | Series resistance | In parallel | Filling in | Average efficiency | Number of | Fraction of rejects |
| First group | 0.629 | 8.835 | 0.0024 | 254.44 | 80.09 | 18.29％ | 982 | 5.69％ |
| Second group | 0.632 | 8.891 | 0.0031 | 269.26 | 80.18 | 18.51％ | 989 | 2.01％ |
Experiment four: the mass input is carried out, 10000 diffusion sheet resistance unqualified surfaces are equally divided, the sheet resistance value is more than 110, the first group of experiments are directly input from the wool making process, namely the prior technical scheme is adopted, the second group of experiments are carried out according to the technical scheme of the invention, and the electrical parameter statistics is as follows
Experiment five: mass input is carried out, 20000 diffusion sheet resistance unqualified surfaces are equally divided, the sheet resistance value is more than 110, the first group of experiments are directly input from the wool making process, namely the prior technical scheme is adopted, the second group of experiments are carried out according to the technical scheme of the invention, and the electrical parameter statistics is as follows
| Electric ginseng | Voltage of | Electric current | Series resistance | In parallel | Filling in | Average efficiency | Number of | Fraction of rejects | Percent of pass of finished product | Grade a product rate |
| First group | 0.629 | 8.866 | 0.0018 | 221.29 | 80.26 | 18.39％ | 19770 | 4.96％ | 92.35％ | 72.09％ |
| Second group | 0.635 | 8.875 | 0.0021 | 305.02 | 80.39 | 18.62％ | 19650 | 1.68％ | 97.75％ | 97.86％ |
The above experimental data are based on the results of multiple experimental verifications performed by two process schemes.
The process parameters in the five tests are shown in the following table:
first set of experimental Process parameters
Second set of Experimental Process parameters
By integrating the five experiments, the production is put into operation from multiple small batches to large batches, and the technical scheme of the invention is obviously optimized in electrical parameters compared with the conventional process, the average efficiency is improved by more than 0.2%, the unqualified surface proportion is greatly reduced by more than 3.5%, the actual production condition can be reflected in large-batch experiments, see experiment four and experiment five, the yield is also improved by more than 5.2%, and the production cost of high-volume battery slices in the recovery process is greatly reduced.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A processing method for a diffusion high sheet resistance silicon wafer is characterized by comprising the following steps:
s1: putting the diffused high sheet resistance silicon wafer into H2SO4/HNO3Performing secondary etching on the mixed solution of/HF, wherein the etching depth is (1.0-1.2) um;
s2: cleaning the etched high-sheet-resistance silicon wafer by using DI pure water;
s3: removing the porous silicon structure on the surface of the high sheet resistance silicon wafer by using a KOH solution;
s4: cleaning with DI pure water;
s5: removing the oxide layer on the surface of the high sheet resistance silicon wafer by using an HF solution;
s6: cleaning with DI pure water;
s7: drying in a drying groove;
s8: transferring the dried high sheet resistance silicon wafer to a diffusion process again for secondary diffusion, wherein the secondary diffusion temperature is 10-30 ℃ lower than that of the conventional diffusion process;
s9: and carrying out secondary etching on the high sheet resistance silicon wafer subjected to secondary diffusion to improve the back polishing effect, and then transferring to a normal production process.
2. The method for processing a diffused high sheet resistance silicon wafer according to claim 1, wherein: and in the third step, HF solution is adopted to replace KOH solution to remove the porous silicon structure on the surface of the high sheet resistance silicon chip.
3. The method for processing a diffused high sheet resistance silicon wafer according to claim 1, wherein:
in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO3The mass concentration is 300-350g/l, H2SO4The mass concentration of the catalyst is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percentage concentration of KOH in the KOH solution is 3-9%, the circulation flow is 20-30l/min, and the reaction temperature is 20-25 ℃;
in the step S8, the diffusion process temperature is set to 810-.
4. The method for processing a diffused high sheet resistance silicon wafer according to claim 2, wherein:
in step S1, the mass concentration of HF in the mixed solution is 30-35g/l, and HNO3The mass concentration is 300-350g/l, H2SO4The mass concentration of the catalyst is 300-380g/l, the reaction temperature is 6-12 ℃, and the circulation flow is 35-45 l/min;
in the step S3, the mass percent concentration of HF in the HF solution is 6% -12%, and the circulating flow rate is 90-150 l/min;
in the step S8, the diffusion process temperature is set to 810-.
5. The method for processing a diffused high sheet resistance silicon wafer according to any one of claims 1 to 4, wherein: in the steps S2, S4, and S6, the circulation flow rate of DI pure water is 50-60L/min.
6. The method for processing a diffused high sheet resistance silicon wafer according to claim 5, wherein: in the step S7, the temperature of the drying tub is 55 to 70 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910834290.2A CN112447879A (en) | 2019-09-05 | 2019-09-05 | Processing method of diffusion high sheet resistance silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910834290.2A CN112447879A (en) | 2019-09-05 | 2019-09-05 | Processing method of diffusion high sheet resistance silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112447879A true CN112447879A (en) | 2021-03-05 |
Family
ID=74732988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910834290.2A Pending CN112447879A (en) | 2019-09-05 | 2019-09-05 | Processing method of diffusion high sheet resistance silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112447879A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110128619A (en) * | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | Solar cell and method of fabricating the same |
| US20120056304A1 (en) * | 2010-09-03 | 2012-03-08 | Samsung Electronics Co., Ltd. | Wafer, Fabricating Method Of The Same, And Semiconductor Substrate |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105780127A (en) * | 2016-04-05 | 2016-07-20 | 盐城阿特斯协鑫阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN107195728A (en) * | 2017-06-23 | 2017-09-22 | 江阴鑫辉太阳能有限公司 | A kind of solar cell is done over again the processing method of piece |
| CN107452599A (en) * | 2017-07-25 | 2017-12-08 | 山西潞安太阳能科技有限责任公司 | A kind of classification for diffusion is done over again technique |
| CN109755352A (en) * | 2019-01-24 | 2019-05-14 | 浙江正泰太阳能科技有限公司 | A kind of silk-screen printing bad surface treatment method and reworking method |
-
2019
- 2019-09-05 CN CN201910834290.2A patent/CN112447879A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110128619A (en) * | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | Solar cell and method of fabricating the same |
| US20120056304A1 (en) * | 2010-09-03 | 2012-03-08 | Samsung Electronics Co., Ltd. | Wafer, Fabricating Method Of The Same, And Semiconductor Substrate |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105780127A (en) * | 2016-04-05 | 2016-07-20 | 盐城阿特斯协鑫阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN107195728A (en) * | 2017-06-23 | 2017-09-22 | 江阴鑫辉太阳能有限公司 | A kind of solar cell is done over again the processing method of piece |
| CN107452599A (en) * | 2017-07-25 | 2017-12-08 | 山西潞安太阳能科技有限责任公司 | A kind of classification for diffusion is done over again technique |
| CN109755352A (en) * | 2019-01-24 | 2019-05-14 | 浙江正泰太阳能科技有限公司 | A kind of silk-screen printing bad surface treatment method and reworking method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112542531B (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN102343352B (en) | Recovery method for solar silicon slice | |
| JP6553731B2 (en) | N-type double-sided battery wet etching method | |
| KR20180001513A (en) | A method for producing a textured structure of a crystalline silicon solar cell | |
| CN101976702B (en) | Manufacturing process and structure of selective emitter solar cell | |
| CN102212885A (en) | Texturing method for polycrystalline silicon solar cells | |
| CN109786511B (en) | Diffusion method suitable for selective emitter | |
| CN106653942A (en) | N-type monocrystalline silicon double-sided cell manufacturing method | |
| CN103981575B (en) | Annealing and wool-making method for monocrystalline silicon wafer | |
| CN101339966A (en) | Post produced velvet production process of solar cell | |
| CN102969392A (en) | Single-side polishing process of solar monocrystalline silicon battery | |
| CN111403561A (en) | Silicon wafer texturing method | |
| CN109037112B (en) | Method for etching crystalline silicon solar SE battery by using inorganic alkali | |
| CN110943144A (en) | Texturing and cleaning method for heterojunction battery | |
| CN112201575A (en) | Selective boron source doping method and preparation method of double-sided battery | |
| CN104088018A (en) | Mono-crystalline silicon wafer texturing cleaning method and mono-crystalline texturing device | |
| CN116799106A (en) | Pre-cleaning method for efficient gettering of crystalline silicon heterojunction solar cell | |
| CN103094417A (en) | Solar cell manufacture method for emitting electrode structure with low-high-low doping density | |
| CN104112795B (en) | A kind of production method of silicon heterogenous solar cell | |
| CN112447879A (en) | Processing method of diffusion high sheet resistance silicon wafer | |
| CN104701422A (en) | Method of improving conversion efficiency of novel battery back etching | |
| CN111799339A (en) | Surface treatment method of silicon wafer suitable for solar cell | |
| CN108133978A (en) | A kind of solar energy diamond wire battery carries on the back etching process | |
| CN104051570A (en) | Manufacturing method of solar cell | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210305 |
|
| RJ01 | Rejection of invention patent application after publication |