CN112444895A - Quantum dot reflection type brightness enhancement film - Google Patents

Quantum dot reflection type brightness enhancement film Download PDF

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Publication number
CN112444895A
CN112444895A CN201910797010.5A CN201910797010A CN112444895A CN 112444895 A CN112444895 A CN 112444895A CN 201910797010 A CN201910797010 A CN 201910797010A CN 112444895 A CN112444895 A CN 112444895A
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CN
China
Prior art keywords
quantum dot
brightness enhancement
enhancement film
reflection type
film
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Pending
Application number
CN201910797010.5A
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Chinese (zh)
Inventor
卢元璋
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Xinsheng Optoelectronics Co ltd
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Xinsheng Optoelectronics Co ltd
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Priority to CN201910797010.5A priority Critical patent/CN112444895A/en
Publication of CN112444895A publication Critical patent/CN112444895A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0273Diffusing elements; Afocal elements characterized by the use
    • G02B5/0284Diffusing elements; Afocal elements characterized by the use used in reflection
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14Protective coatings, e.g. hard coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Polarising Elements (AREA)

Abstract

The invention discloses a quantum dot reflection type brightness enhancement film, which comprises a reflection type brightness enhancement film (DBEF), a layer of Quantum Dot (QD) glue and a protective layer, wherein one side of the quantum dot is coated and combined with one side of the reflection type brightness enhancement film, one side of the protective layer is arranged on the other side of the quantum dot and is bonded by the quantum dot glue, and the reflection type brightness enhancement film, the quantum dot glue and the protective layer are combined into a whole. The reflection type brightness enhancement film can be applied to a liquid crystal display, can separate cross-shaped light resistance into unidirectional light, can recycle the light through reflection to achieve a brightness enhancement effect, can be coated with quantum dots for self-luminescence by utilizing the quantum dots, enables a light emitting source to be directly close to a liquid crystal panel, can increase the light utilization rate, can remove a prism sheet and a diffusion sheet, only needs one quantum dot reflection type brightness enhancement film in the whole structure, can reduce the action of placing a film by personnel in the process, and reduces the rework rate and the material cost.

Description

Quantum dot reflection type brightness enhancement film
Technical Field
The present invention relates to a brightness enhancement film, and more particularly to a quantum dot reflective brightness enhancement film.
Background
Generally, the optical module has poor optical utilization efficiency, wherein a Quantum Dot Film (QD Film) must be combined with a reflective Brightness Enhancement Film (DBEF), and must be stacked with a prism sheet and a diffusion sheet to achieve a workable Brightness, so that a worker must avoid breaking during placement, and the sequence cannot be wrongly placed, if the wrong placement or the optical abnormality occurs, the worker must be disassembled to rework the whole optical module, the time and the labor are required to be increased, the production time is delayed, and the production time is also delayed.
Further, the existing optical structure needs to be reinforced by using the diaphragms of other optical structures due to poor optical utilization rate, so that the assembly is complicated, the assembly process is an assembly line on the backlight plate, each diaphragm is respectively positioned at one station, one worker manually puts the diaphragm on the backlight plate at each station, and the diaphragm is supplemented by another worker when the diaphragm is about to run out, so that the process is tedious and complicated.
Please refer to taiwan patent publication No. I660222, "a liquid crystal display including a quantum dot film and a color purity enhancement film", wherein fig. 1 and the description disclose a backlight unit sequentially including a dual-layer brightness enhancement film (i.e., a reflective brightness enhancement film, DBEF) or a diffusion sheet, a horizontal prism sheet, a vertical prism sheet, a quantum dot film, a light guide plate, and a reflection plate, and it is obvious that the quantum dot film in the patent case also needs to be stacked with the horizontal prism sheet and the vertical prism sheet in addition to the dual-layer brightness enhancement film or the diffusion sheet to achieve a usable brightness.
From the above, the overall optical utilization and manufacturing process of the optical module comprising the quantum dot film and the reflective brightness enhancement film are still not perfect.
Accordingly, the present invention is not limited to the above embodiments, but is to be construed as broadly as possible and to include all technical and scientific equivalents falling within the scope of the appended claims.
Disclosure of Invention
The invention aims to provide a quantum dot reflection type brightness enhancement film which can improve the efficiency of a quantum dot membrane and reduce the overall production cost.
Based on the above, the present invention mainly adopts the following technical means to achieve the above object.
A quantum dot reflective brightness enhancement film, comprising: a reflective brightness enhancement film; a layer of quantum glue, one side of which is coated and combined with one side of the reflection type brightness enhancement film; one side of the protective layer is arranged at the other side of the quantum dot and is bonded by the quantum dot; the reflection type brightness enhancement film, the quantum dots and the protective layer are combined into a whole.
Furthermore, the quantum dots can be made of fluorescent powder, quantum dots containing Cd, perovskite, or InP (indium phosphide).
Further, the protective layer is any one of a membrane or a glue material.
By adopting the technical means, the reflection type brightness enhancement film can separate cross-shaped light resistance into unidirectional light, the light can be recycled by reflection to achieve the brightness enhancement effect, quantum dots are coated on the reflection type brightness enhancement film to realize self luminescence by utilizing the quantum dots, a light emitting source is directly close to a liquid crystal panel, the light utilization rate can be increased, a prism sheet and a diffusion sheet can be removed, the whole structure only needs one quantum dot reflection type brightness enhancement film, the action of placing the film by personnel can be reduced in the process, and the rework rate and the material cost are reduced.
Drawings
FIG. 1 is an exploded view of the present invention.
Fig. 2 is a schematic diagram of a use embodiment of the present invention.
FIG. 3 is a table of spectral data according to the present invention.
Fig. 4 is a table of spectral data of a conventional quantum dot Film (QD Film).
[ notation ] to show
Quantum dot reflection type brightness enhancement film 1 reflection type brightness enhancement film 10
Quantum dot 20 protective layer 30
Polarizing film 41 of liquid crystal panel 40
Color filter 42 liquid crystal 43
TFT 44 polarizing film 45
Backlight unit 50 light source 51
The reflective film 52 guides the light 53.
Detailed Description
The following detailed description is provided only by way of specific embodiments and is provided in conjunction with the accompanying drawings, so that the functions and features of the present invention can be further understood and appreciated.
Referring to fig. 1, the quantum dot reflective brightness enhancement film 1 of the present invention includes a reflective brightness enhancement film (DBEF)10, a layer of Quantum Dot (QD) glue 20, and a protective layer 30, wherein the quantum dot reflective brightness enhancement film 1 may be abbreviated as QD-DBEF. As will be described in detail below:
the reflective brightness enhancement film 10 is used to separate the cross-shaped photoresist into unidirectional light and reflect the separated light for reuse.
One side of the quantum dot 20 is coated and combined with one side of the reflection type brightness enhancement film 10. The quantum dots 20 are used for light self-luminescence, and the combination of the quantum dots 20 and the reflection type brightness enhancement film 10 can minimize the scattered light and maximize the optical utilization rate.
One side of the passivation layer 30 is disposed on the other side of the quantum dot 20 and is bonded by the quantum dot 20. The protective layer 30 is used to facilitate the operation of the worker and prevent the scratch.
The reflective brightness enhancement film 10, the quantum dot 20, and the passivation layer 30 are integrated.
In one embodiment, the quantum dots 20 may be made of any one of fluorescent powder, Cd-containing quantum dots, perovskite, and InP (indium phosphide).
In one embodiment, the protection layer 30 is any one of a film and a plastic material.
The above description is provided for each component and its composition of the present invention, and the following description is provided for the use embodiments, features and benefits of the present invention:
referring to fig. 2, the present invention can be applied to a liquid crystal display including a liquid crystal panel 40 and a backlight unit 50.
The liquid crystal panel 40 includes a polarizing film 41, a color filter 42, a liquid crystal 43, a TFT (thin film transistor) 44, and a polarizing film 45, which are laminated in sequence.
The backlight unit 50 includes a light source 51, a reflective film 52, a light guide plate 53, and the quantum dot reflective brightness enhancement film 1.
Referring to fig. 1 and 2, the reflective brightness enhancement film 10 can separate cross-shaped photoresist into unidirectional light, and recycle the light by reflection to achieve brightness enhancement effect, the reflective brightness enhancement film 10 is coated with quantum dots 20 to make the light self-emit by utilizing quantum dots, the light-emitting source is directly close to the liquid crystal panel 40, the light utilization rate can be increased, and the prism sheet and the diffusion sheet can be removed.
The whole backlight unit 50 only needs to be matched with one quantum dot reflection type brightness enhancement film 1, the assembling process can be simplified to 1 station, and the whole backlight unit can be thinner due to the fact that only 1 optical film is reduced.
The beneficial benefits of the invention:
the invention increases the optical utilization rate by changing the optical structure, further reduces the process flow and reduces the rework probability, a plurality of original process stations are simplified into one process station, a plurality of original optical diaphragms are simplified into one sheet, and the process time, the personnel cost and the rework probability are reduced by increasing the optical utilization rate.
Referring to fig. 3 and 4, in the spectrum data table of fig. 3, the spectrum data table of the present invention and the spectrum data table of the conventional quantum dot Film (QD Film) of fig. 4, the luminance of the practical test example is increased by 67% compared with the conventional quantum dot Film under the same blue light source, concentration and thickness, and if the luminance of the conventional quantum dot Film is the same as that of the present invention, the quantum dot concentration must be increased, and the quantum dot cost must be increased.
In summary, the present invention utilizes the reflective brightness enhancement film in combination with quantum dot to maximize the optical utilization, thereby simplifying the production process, reducing the number of operators, reducing the rework rate, reducing the cost, and achieving a thinner profile.
The above-mentioned embodiments are provided for illustrative purposes only, and should not be construed as limiting the present invention, i.e., all the various modifications and variations of the embodiments described in the claims are intended to be included therein.

Claims (3)

1. A quantum dot reflective brightness enhancement film, comprising:
a reflective brightness enhancement film;
a layer of quantum glue, one side of which is coated and combined with one side of the reflection type brightness enhancement film;
one side of the protective layer is arranged at the other side of the quantum dot and is bonded by the quantum dot;
the reflection type brightness enhancement film, the quantum dots and the protective layer are combined into a whole.
2. The quantum dot reflective brightness enhancing film of claim 1, wherein: the quantum dots can be made of fluorescent powder, quantum dots containing Cd, perovskite, or InP (indium phosphide).
3. The quantum dot reflective brightness enhancing film of claim 1, wherein: the protective layer is any one of a membrane or a glue material.
CN201910797010.5A 2019-08-27 2019-08-27 Quantum dot reflection type brightness enhancement film Pending CN112444895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910797010.5A CN112444895A (en) 2019-08-27 2019-08-27 Quantum dot reflection type brightness enhancement film

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Application Number Priority Date Filing Date Title
CN201910797010.5A CN112444895A (en) 2019-08-27 2019-08-27 Quantum dot reflection type brightness enhancement film

Publications (1)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207067603U (en) * 2017-08-02 2018-03-02 天津纳美纳米科技有限公司 LCD backlight component with Double Brightness Enhancement Film
CN107966854A (en) * 2017-11-23 2018-04-27 南通创亿达新材料股份有限公司 The preparation method of quantum dot light emitting feature board in back light module unit structure
CN108089370A (en) * 2017-11-24 2018-05-29 宁波东旭成新材料科技有限公司 A kind of preparation method of the quantum dot film of no barrier
JP2018098088A (en) * 2016-12-15 2018-06-21 大日本印刷株式会社 Backlight with quantum dot sheet and liquid crystal display device with said backlight
CN108614376A (en) * 2018-03-28 2018-10-02 宁波江北激智新材料有限公司 A kind of high efficiency quantum dot film and its preparation method and application reflecting blue light
CN209150152U (en) * 2018-11-16 2019-07-23 常州华威新材料有限公司 A kind of composite fluorescent film improving blue light utilization rate
CN110137380A (en) * 2019-06-10 2019-08-16 衡山县佳诚新材料有限公司 A kind of quantum dot blast eyeshield film

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018098088A (en) * 2016-12-15 2018-06-21 大日本印刷株式会社 Backlight with quantum dot sheet and liquid crystal display device with said backlight
CN207067603U (en) * 2017-08-02 2018-03-02 天津纳美纳米科技有限公司 LCD backlight component with Double Brightness Enhancement Film
CN107966854A (en) * 2017-11-23 2018-04-27 南通创亿达新材料股份有限公司 The preparation method of quantum dot light emitting feature board in back light module unit structure
CN108089370A (en) * 2017-11-24 2018-05-29 宁波东旭成新材料科技有限公司 A kind of preparation method of the quantum dot film of no barrier
CN108614376A (en) * 2018-03-28 2018-10-02 宁波江北激智新材料有限公司 A kind of high efficiency quantum dot film and its preparation method and application reflecting blue light
CN209150152U (en) * 2018-11-16 2019-07-23 常州华威新材料有限公司 A kind of composite fluorescent film improving blue light utilization rate
CN110137380A (en) * 2019-06-10 2019-08-16 衡山县佳诚新材料有限公司 A kind of quantum dot blast eyeshield film

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Application publication date: 20210305