CN112421374A - Semiconductor optical fiber coupling laser - Google Patents

Semiconductor optical fiber coupling laser Download PDF

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Publication number
CN112421374A
CN112421374A CN202011408542.4A CN202011408542A CN112421374A CN 112421374 A CN112421374 A CN 112421374A CN 202011408542 A CN202011408542 A CN 202011408542A CN 112421374 A CN112421374 A CN 112421374A
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CN
China
Prior art keywords
heat dissipation
chip
coupled laser
semiconductor
mounting
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Pending
Application number
CN202011408542.4A
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Chinese (zh)
Inventor
牛奔
陈欣
张强
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Zhejiang Thermal Stimulation Optical Technology Co ltd
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Zhejiang Thermal Stimulation Optical Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Zhejiang Thermal Stimulation Optical Technology Co ltd filed Critical Zhejiang Thermal Stimulation Optical Technology Co ltd
Priority to CN202011408542.4A priority Critical patent/CN112421374A/en
Publication of CN112421374A publication Critical patent/CN112421374A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02461Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention relates to the technical field of semiconductor laser, in particular to a semiconductor optical fiber coupling laser. The semiconductor optical fiber coupling laser comprises a main shell, wherein an accommodating groove is formed in the main shell, and an installation step is arranged at the bottom of the accommodating groove; the main casing body is provided with a plurality of heat dissipation channels, and the length direction of the heat dissipation channels is synchronous with the ascending direction of the installation steps. The embodiment of the invention has the beneficial effects that: the heat dissipation channel is arranged at the bottom of the containing groove, the setting direction of the heat dissipation channel is synchronous with the ascending direction of the installation step, so that when the cooling medium passes through the heat dissipation channel, the chip arranged on the installation step can be cooled, the heat dissipation efficiency of the semiconductor laser is improved, the quality of the chip output light beam is guaranteed, and the service life of the chip is prolonged.

Description

Semiconductor optical fiber coupling laser
Technical Field
The invention relates to the technical field of semiconductor laser, in particular to a semiconductor optical fiber coupling laser.
Background
At present, a plurality of chips are generally welded on a ceramic heat sink, the chips are welded on the heat sink with steps through a small heat sink, the chips are coupled into optical fibers to obtain high-power output after shaping through a fast-slow shaft, in the process, if the chips are not well cooled, heat is not timely led out, heat accumulation can be caused, the junction temperature of the chips is increased, the output wavelength and the spectral width are deviated, the service life of the chips is shortened, the quality of output light beams of the chips is reduced, the coupling efficiency of an optical fiber coupling module is reduced, and the modules are burnt out.
Disclosure of Invention
The invention aims to provide a semiconductor optical fiber coupling laser which can improve the heat dissipation efficiency of a semiconductor laser.
The embodiment of the invention is realized by the following steps:
the invention provides a semiconductor optical fiber coupling laser, which comprises a main shell, wherein an accommodating groove is formed in the main shell, and an installation step is arranged at the bottom of the accommodating groove; the main casing body is provided with a plurality of heat dissipation channels, and the length direction of the heat dissipation channels is synchronous with the ascending direction of the installation steps.
In an alternative embodiment, the edges of the mounting steps on which the same component is mounted are equidistant from the center of the heat dissipation channel.
In an alternative embodiment, the inlet and outlet of the heat dissipation channel are provided on the bottom side of the main housing.
In an alternative embodiment, a plurality of the heat dissipation channels are communicated with each other through a transverse channel.
In an optional embodiment, the mounting step includes a chip step, a slow axis collimator step, a reflector bonding step, and a light leakage shielding step;
the chip steps, the slow axis collimating mirror steps and the reflector bonding steps are all arranged in pairs and symmetrically arranged on two sides of the light leakage shielding step.
In an optional embodiment, an included angle formed between the length direction of the reflector bonding step and the length direction of the light leakage shielding step is an acute angle.
In an alternative embodiment, the heights of the chip step, the slow axis collimator step and the reflector bonding step are sequentially reduced.
In an optional embodiment, the heat dissipation channel is disposed corresponding to the chip step and the slow axis collimator step, respectively.
In an alternative embodiment, the bottom of the receiving groove is provided with a mounting bottom surface, and the mounting bottom surface is connected with the lowest step of the mounting step.
In an alternative embodiment, a polarizing prism, a convex lens, a concave lens and a coupling lens are arranged on the mounting bottom surface;
the polarizing prism, the convex lens, the concave lens and the coupling lens are sequentially arranged to form a laser light path device.
The embodiment of the invention has the beneficial effects that:
the heat dissipation channel is arranged at the bottom of the containing groove, the setting direction of the heat dissipation channel is synchronous with the ascending direction of the installation step, so that when the cooling medium passes through the heat dissipation channel, the chip arranged on the installation step can be cooled, the heat dissipation efficiency of the semiconductor laser is improved, the quality of the chip output light beam is guaranteed, and the service life of the chip is prolonged.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a top view of a main housing of a semiconductor fiber coupled laser according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a cross-sectional view B-B of FIG. 1;
FIG. 4 is a cross-sectional view C-C of FIG. 3;
FIG. 5 is a schematic perspective view of FIG. 1;
fig. 6 is a top view of a semiconductor fiber coupled laser according to an embodiment of the present invention.
Icon: 1-a main housing; 2-fixing the ear; 3-fixing holes; 4-chip step; 5-slow axis collimating mirror step; 6-bonding a step on the reflector; 7-light leakage shielding steps; 8-mounting the bottom surface; 9-a transverse channel; 10-accommodating grooves; 11-a heat dissipation channel; 12-a liquid discharge port; 13-a liquid inlet; 14-a chip; 15-slow axis collimating mirror; 16-a small mirror; 17-large mirror; 18-a polarizing prism; 19-a plano-concave cylindrical mirror; 20-plano-convex cylindrical mirror; 21-a coupling lens; 22-a scaffold; 23-end cap optical fiber; 24-fiber pigtail sleeve; 25-peeling the upper cover; 26-ceramic insulated electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Some embodiments of the present invention are described in detail below with reference to fig. 1-6. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
The invention provides a semiconductor optical fiber coupling laser, which comprises a main shell 1, wherein an accommodating groove 10 is formed in the main shell 1, and an installation step is arranged at the bottom of the accommodating groove 10; the main casing body 1 is provided with a plurality of heat dissipation channels 11, and the length direction of the heat dissipation channels 11 is synchronous with the ascending direction of the installation steps.
In this embodiment, through the setting of many heat dissipation channels 11, make it can dispel the heat to the chip 14 that sets up on the installation step, and then improve the radiating efficiency of chip 14, can avoid because the poor problem that leads to of the electro-optic conversion rate is on the low side, service environment is harsh, life is short of chip 14 heat dissipation.
Specifically, in this embodiment, the main housing 1 is integrally formed, and the bottom of the accommodating groove 10 is a heat sink, so as to avoid the outer frame installation on the heat sink, simplify the manufacturing process of the semiconductor fiber coupled laser, facilitate the installation of the upper cover of the multi-chip 14 high-power semiconductor fiber coupled laser, and facilitate the heat dissipation of the upper cover and the outer frame.
In this embodiment, the main housing 1 is made of a metal with high thermal conductivity, and for convenient soldering, the metal surface is plated with nickel and then with gold, so as to facilitate the in soldering of COS and heat sink.
Wherein COS is the structure formed after the die 14 is soldered to the ceramic auxiliary heat sink.
In the present embodiment, a hermetic sealing hole is provided in the main housing 1, which facilitates the leak detection and hermetic sealing of the multi-chip 14 high-power semiconductor fiber-coupled laser.
In this embodiment, an electrode welding hole is further provided on the main case 1, and an electrode with a ceramic insulated lead wire can be welded to the heat sink, so that power can be conveniently applied.
In an alternative embodiment, the inlet and outlet of the heat dissipation channel 11 are provided on the bottom side of the main housing 1.
In this embodiment, the inlets and outlets of the two cooling liquids are distributed at the bottom of the main housing 1, so that the cooling liquids can be conveniently used as the pumping source of the fiber laser, and can be connected with the water cooling plate of the fiber laser, and the cooling liquids directly enter the multi-chip 14 high-power semiconductor fiber coupled laser after passing through the water cooling plate of the fiber laser without additional pipeline connection.
Specifically, in this embodiment, the liquid inlet 13 of the heat dissipation channel 11 is at the lower end, and the liquid outlet 12 is at the upper end, so as to guide away the heat of the chip 14 to the greatest extent.
In this embodiment, the liquid inlet 13 and the liquid outlet 12 are both disposed at the bottom of the main housing 1, which facilitates the installation and connection of the cooling liquid supply device.
In this embodiment, the heat dissipation channel 11 is processed by drilling.
After drilling, a heat dissipation channel 11 is formed, and then drilling is performed on the lower surface of the main shell 1 to form a liquid inlet 13 and a liquid outlet 12 which are communicated with the heat dissipation channel 11 and the water cooling plate through the liquid inlet 13 and the liquid outlet 12.
The drilled holes of the heat dissipation channels 11 are brazed to the main housing 1 with copper plugs using silver brazing.
In the present embodiment, the chip 14 is located at the same distance from the center of the heat dissipation channel 11 corresponding to the bonding surface of the chip step 4, so that the heat conduction efficiency of the heat dissipation channel 11 is the highest.
Specifically, the edges of the chip step 4 corresponding to the chip 14 are equidistant from the central axis of the heat dissipation channel 11, so that the heat dissipation efficiency of the chip on the chip step 4 is the same, and the heat conduction efficiency is the highest.
In this embodiment, the overall height of the mounting step is always raised, and the up-and-down fluctuation is avoided, so as to ensure the heat dissipation efficiency of the chip 14.
In an alternative embodiment, the plurality of heat dissipation channels 11 communicate with each other through the transverse channel 9.
In this embodiment, after the plurality of heat dissipation channels 11 are communicated with each other through the transverse channel 9, the heat dissipation channels 11 form a heat dissipation network, thereby further improving the heat dissipation efficiency.
In an optional embodiment, the mounting steps include a chip step 4, a slow axis collimator step 5, a reflector bonding step 6, and a light leakage shielding step 7; the chip step 4, the slow axis collimating mirror step 5 and the reflector bonding step 6 are all arranged in pairs and symmetrically arranged on two sides of the light leakage shielding step 7.
Specifically, due to the arrangement, the chips 14 are respectively arranged on the two opposite sides of the light leakage shielding step 7, the distance between the chips is increased, and the heat dissipation efficiency of the chips can be increased.
Specifically, in this embodiment, through the mode of indium welding, with the COS welding on chip step 4, the both sides of chip step 4 be provided with slow axis collimating mirror step 5 and fast axis collimating mirror step respectively, be used for bonding slow axis collimating mirror 15 and fast axis collimating mirror respectively, the light leak shelters from step 7 and sets up the one side far away from the COS at slow axis collimating mirror 15.
More specifically, in this embodiment, the two rows of COS are cooled by using the two separate side heat dissipation channels 11, where the heat dissipation channels 11 are inclined channels, the distances from the chip steps 4 corresponding to the chips 14 to the centers of the heat dissipation channels 11 are equal, and the heat dissipation channels 11 are located right below the chip steps 4. The distance between each COS and the center of the heat dissipation channel 11 is equal, the distance between the COS and the center of the heat dissipation channel 11 is shortened, and the problem that the chip 14 fails due to inconsistent heat dissipation of the chip 14 is solved. The two rows of chips 14 are distributed symmetrically at a long distance and are cooled by different heat dissipation channels 11 respectively. Each COS corresponds to a fast axis collimating mirror and a slow axis collimating mirror 15, and two lines of light spots are synthesized along the fast axis collimating mirror through a small reflecting mirror 16 which is separated from the reflecting mirror bonding step 6. Two rows of COS (chip operating systems) emit light in opposite directions, and the light leakage shielding step 7 surface in the middle of the bottom of the accommodating groove 10 can effectively inhibit the light leaked after the opposite COS is reflected by the small reflector 16 from being incident on the cavity surface of the COS, so that the chip 14 is prevented from being damaged. The main shell 1 is provided with an airtight packaging hole, so that the leakage detection and airtight packaging of the multi-chip 14 high-power semiconductor optical fiber coupling laser are facilitated. The main housing 1 is also provided with electrode welding holes for welding the electrodes 26 with ceramic insulation to the main housing 1, so that power can be conveniently applied.
In an alternative embodiment, an included angle formed between the length direction of the reflector bonding step 6 and the length direction of the light leakage blocking step 7 is an acute angle.
In the present embodiment, the small reflector 16 is disposed on the reflector bonding step 6 by bonding, and a certain included angle is formed between the length of the single reflector bonding step 6 and the climbing direction of the light leakage blocking step 7, and the included angle is an acute angle.
Specifically, in the present embodiment, the included angle is 45 °.
It should be noted that the included angle may be 45 °, but is not limited to 45 °, and may be other angles, such as 30 °, 60 °, etc., as long as the length direction of the mirror bonding step and the length direction of the light leakage blocking step form an acute included angle.
Specifically, in the present embodiment, the reflecting mirror bonding steps 6 are symmetrically disposed on two opposite sides of the light leakage blocking step 7.
In an alternative embodiment, the heights of the chip step 4, the slow axis collimator step 5 and the reflector bonding step 6 are sequentially reduced.
In an optional embodiment, the heat dissipation channel 11 is disposed corresponding to the chip step 4 and the slow axis collimator step 5, respectively.
Specifically, in this embodiment, the heat dissipation channels 11 are correspondingly arranged below the chip step 4 and below the slow axis collimating mirror 15, the chip 14 welded on the chip step 4 is directly dissipated through the heat dissipation channels 11, the slow axis collimating mirror 15 on the slow axis collimating mirror step 5 is dissipated, and the heat dissipation performance of the main body of the laser is ensured.
In an alternative embodiment, the bottom of the receiving groove 10 is provided with a mounting bottom surface 8, and the mounting bottom surface 8 connects the lowest step of the mounting step.
In particular, other components of the laser are arranged on the mounting bottom surface 8 to ensure normal use and function of the laser.
In an alternative embodiment, a polarizing prism 18, a convex lens, a concave lens and a coupling lens 21 are arranged on the mounting bottom surface 8; the polarizing prism 18, the convex lens, the concave lens and the coupling lens 21 are arranged in sequence to form a laser light path device.
Specifically, in the present embodiment, one row of light spots directly passes through the polarizing prism 18, the other row of light spots is reflected by the large reflecting mirror 17, and then reflected by the polarizing prism 18 and then overlapped with the other row of light spots to form a row of light spots, and then the row of light spots passes through the planoconvex lens 19, the planoconvex lens 20, and the coupling lens 21 to be focused into the end cap optical fiber 23, and the other end of the end cap optical fiber 23 passes through the lower part of the peeling upper cover 25 and is connected with the optical fiber tail sleeve 24.
In the present embodiment, peeling off the upper cover 25 can prevent light that does not enter the optical fiber from being scattered onto other lenses.
Specifically, in the present embodiment, the coupling lens 21 is bonded using the holder 22.
Specifically, in this embodiment, because the heating rate of the components arranged on the mounting bottom surface 8 is low, the heat dissipation channel 11 may not be arranged below the mounting bottom surface, and only the bottom part provided with the mounting step is provided with the multiple heat dissipation channels 11 for heat dissipation.
Water enters and exits from the bottom, and the internal multichannel macro-channel water-cooling multi-chip 14 high-power semiconductor optical fiber coupling laser structure is very suitable for high-power semiconductor optical fiber coupling lasers.
In an alternative embodiment, the main housing 1 is provided with fixing ears 2 on opposite sides thereof.
Specifically, in this embodiment, the number of the fixing lugs 2 is five, the fixing lugs are arranged on the side portion of the main housing 1, the fixing holes 3 are arranged on the fixing lugs 2, and after the fixing pieces such as bolts penetrate through the fixing holes 3, the fixing lugs 2 are fixed, so that the semiconductor optical fiber coupling laser is fixed.
It should be noted that in the present embodiment, the main housing 1 may be fixed by the fixing ears 2, or other fixing methods may be used as long as the main housing 1 can be fixed.
The embodiment of the invention has the beneficial effects that:
through setting up heat dissipation channel 11 in the bottom of holding tank 10, and with heat dissipation channel 11 set up the direction synchronous with the ascending direction of installation step for when cooling medium passed through heat dissipation channel 11, can dispel the heat to the chip 14 that sets up on the installation step, improved semiconductor laser's radiating efficiency, and then guarantee the quality of chip 14 output light beam, and the life of chip 14.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A semiconductor optical fiber coupling laser comprises a main shell, wherein an accommodating groove is formed in the main shell, and an installation step is formed at the bottom of the accommodating groove; the heat dissipation structure is characterized in that a plurality of heat dissipation channels are arranged on the main shell, and the length direction of the heat dissipation channels is synchronous with the ascending direction of the mounting steps.
2. The semiconductor fiber-coupled laser of claim 1, wherein the edges of the mounting steps on which the same component is mounted are equidistant from the center of the heat dissipation channel.
3. The semiconductor fiber-coupled laser according to claim 1, wherein the inlet and outlet of the heat dissipation channel are provided on the bottom side surface of the main housing.
4. The semiconductor fiber-coupled laser according to claim 1, wherein the plurality of heat dissipation channels are communicated with each other through a transverse channel.
5. The semiconductor fiber-coupled laser of claim 1, wherein the mounting steps comprise a chip step, a slow axis collimator step, a mirror bonding step, and a light leakage blocking step;
the chip steps, the slow axis collimating mirror steps and the reflector bonding steps are all arranged in pairs and symmetrically arranged on two sides of the light leakage shielding step.
6. The semiconductor fiber-coupled laser according to claim 5, wherein an included angle formed by a length direction of the mirror bonding step and a length direction of the light leakage blocking step is an acute angle.
7. The semiconductor fiber-coupled laser of claim 5, wherein the heights of the chip step, the slow-axis collimator step and the reflector bonding step decrease in sequence.
8. The semiconductor fiber-coupled laser according to claim 5, wherein the heat dissipation channel is disposed corresponding to the chip step and the slow axis collimator step, respectively.
9. The semiconductor fiber-coupled laser according to claim 1, wherein a groove bottom of the receiving groove is provided with a mounting bottom surface, the mounting bottom surface connecting a lowest step of the mounting step.
10. The semiconductor fiber-coupled laser according to claim 9, wherein a polarizing prism, a convex lens, a concave lens and a coupling lens are disposed on the mounting bottom surface;
the polarizing prism, the convex lens, the concave lens and the coupling lens are sequentially arranged to form a laser light path device.
CN202011408542.4A 2020-12-04 2020-12-04 Semiconductor optical fiber coupling laser Pending CN112421374A (en)

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CN202011408542.4A CN112421374A (en) 2020-12-04 2020-12-04 Semiconductor optical fiber coupling laser

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Application Number Priority Date Filing Date Title
CN202011408542.4A CN112421374A (en) 2020-12-04 2020-12-04 Semiconductor optical fiber coupling laser

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113054527A (en) * 2021-03-16 2021-06-29 北京工业大学 Heat radiator for high power semiconductor laser
CN113708205A (en) * 2021-08-28 2021-11-26 光惠(上海)激光科技有限公司 Fiber laser system
CN113927176A (en) * 2021-11-26 2022-01-14 深圳市宏钢机械设备有限公司 Dissimilar material brazing local plating water-cooling base
CN114512892A (en) * 2022-04-02 2022-05-17 北京热刺激光技术有限责任公司 Multi-single-tube semiconductor laser
CN117937231A (en) * 2024-03-25 2024-04-26 度亘核芯光电技术(苏州)有限公司 Semiconductor laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113054527A (en) * 2021-03-16 2021-06-29 北京工业大学 Heat radiator for high power semiconductor laser
CN113708205A (en) * 2021-08-28 2021-11-26 光惠(上海)激光科技有限公司 Fiber laser system
CN113708205B (en) * 2021-08-28 2024-05-28 光惠(上海)激光科技有限公司 Optical fiber laser system
CN113927176A (en) * 2021-11-26 2022-01-14 深圳市宏钢机械设备有限公司 Dissimilar material brazing local plating water-cooling base
CN114512892A (en) * 2022-04-02 2022-05-17 北京热刺激光技术有限责任公司 Multi-single-tube semiconductor laser
CN117937231A (en) * 2024-03-25 2024-04-26 度亘核芯光电技术(苏州)有限公司 Semiconductor laser
CN117937231B (en) * 2024-03-25 2024-07-09 度亘核芯光电技术(苏州)有限公司 Semiconductor laser

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