CN112420973A - Preparation method of silicon-based OLED micro-display capable of improving brightness and micro-display - Google Patents
Preparation method of silicon-based OLED micro-display capable of improving brightness and micro-display Download PDFInfo
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Abstract
The invention belongs to the technical field of silicon-based OLED micro-display, and particularly relates to a preparation method of a silicon-based OLED micro-display capable of improving brightness and the micro-display. The technical scheme of the invention overcomes the problems of low success rate and efficiency of dry-wet etching of the Ag electrode and the limitation on the preparation of the anode structure with extremely small scale, extremely high precision and extremely high density. Compared with the traditional Al electrode, the light reflectivity is greatly improved, and the brightness of the silicon-based OLED micro-display product can be greatly improved.
Description
Technical Field
The invention belongs to the technical field of silicon-based OLED micro-display, and particularly relates to a preparation method of a silicon-based OLED micro-display capable of improving brightness and the micro-display.
Background
It is generally considered that a micro OLED display refers to an organic Light Emitting device with a display size below 1 inch based on silicon-based CMOS driving, the pixel resolution is as high as 800 × 600, silicon-based OLED (organic Light Emitting display) is called a black horse of the next generation display technology, and is now widely used in military markets such as helmet-mounted, gun sight, night vision device, etc., and with the application of new technologies such as AR/VR and auto-driving, the silicon-based OLED micro display will grow explosively.
At present, the traditional silicon-based OLED micro-display product mainly has the problem of insufficient brightness, and particularly the problem is more serious when the traditional silicon-based OLED micro-display product is applied to the fields of AR and projection. Therefore, improving the brightness of silicon-based OLED products is a technical problem that the art in any field generally wants to solve. For silicon-based OLED devices, the OLED device structure is generally of a top-emitting structure, and the anode of the top-emitting OLED is crucial to the preparation of high-efficiency OLEDs. The main point is that the anode of the top-emitting device is required to have good energy level matching with the organic functional layer of the OLED, and also required to have high reflectivity, and commonly used materials as reflective metal of the top-emitting OLED include Ag and the like. Whereas in the field of silicon-based OLEDs Ag anodes are rarely used. The main reasons are the following: 1) the metal Ag is not a common metal material used by a wafer factory, and the use of the metal Ag requires customized process customization in the wafer factory, which is generally unwilling to cooperate or extremely high in cost; 2) due to the high pixel resolution of the silicon-based OLED, the precision of the pixel anode preparation needs to reach 0.5um or even higher, the current wet etching process of Ag commonly used in panel factories cannot meet the high precision requirement at all, and the dry etching also has the problems of large etching difficulty and low etching rate. This results in that almost all current silicon-based OLED factories can only use the Al anode made by the wafer factory or panel factory to solve the problem, and the use of the Ag electrode with better performance can hardly be realized.
Disclosure of Invention
In view of the technical problems set forth in the background, it is an aspect of the present invention to provide a method for fabricating a silicon-based OLED micro-display with improved brightness.
In order to achieve the purpose, the invention provides the following technical scheme:
a preparation method of a silicon-based OLED micro-display capable of improving brightness comprises the following steps:
s1, providing a silicon substrate;
s2, depositing a first pixel defining layer on the silicon substrate, wherein the first pixel defining layer includes but is not limited to silicon nitride, silicon oxide or silicon oxynitride;
s3, patterning and etching the first pixel definition layer to form a chamfer angle on the first pixel definition layer and expose the anode pixel area;
s4, coating a photoresist layer and patterning;
s5, depositing a pixel anode layer on the silicon substrate, wherein the pixel anode layer at least comprises an Ag layer and an ITO layer positioned on the Ag layer;
and S6, removing the photoresist layer to obtain the silicon substrate for preparing the pixel anode.
Further, the silicon substrate is provided with a CMOS driving circuit, the silicon substrate is provided with a first surface and a second surface, the CMOS driving circuit is close to the second surface of the silicon substrate and far away from the first surface, and the uppermost part of the second surface comprises a tungsten valve connected with an anode of the OLED.
Preferably, in the step S2, the first pixel defining layer is grown by PECVD, and the thickness of the first pixel defining layer is 100-2000 nm.
Further, the photoresist patterning in step S4 includes steps of photoresist coating, exposing, developing, photoresist stripping, and the like.
Preferably, the anode layer of the pixel in step S5 may further include one or more connection layers, where the connection layer may be a Ti layer or a TiN layer, and the thickness of the connection layer is 1-10 nm.
Further, the method for removing the photoresist in step S6 may be dry stripping or wet stripping.
Preferably, after the step S6 is completed, the method may further include the step S7: and depositing a second pixel defining layer on the silicon substrate, patterning and etching the second pixel defining layer to expose an anode pixel area, and finishing the preparation of the silicon-based OLED pixel anode.
Further, after the silicon substrate of the pixel anode is prepared, the preparation of the silicon-based OLED micro-display further comprises the following steps: the manufacturing method comprises the following steps of OLED evaporation, film packaging, color film preparation, cover plate attaching, substrate cutting and binding.
As another aspect of the present invention, there is provided a silicon-based OLED device prepared by any one of the above-described methods.
Compared with the prior art, the technical effects of the invention at least comprise the following aspects:
1. the invention provides a preparation method of a silicon-based OLED micro-display capable of improving brightness and a micro-display device. Particularly, the preparation method of the high-precision pixel anode top electrode is provided, the problem of dry-wet etching of the Ag electrode is solved, and the limitations of low success rate of traditional wet lift-off and preparation of an anode structure with extremely small scale, extremely high precision and extremely high density are broken through. Compared with the traditional dry etching method of the photoresist mask mode, the etching efficiency and the etching precision are also greatly improved. Compared with the traditional Al electrode, the Ag electrode and the ITO of the invention are used as the anode of the top-emitting OLED device, so that the light reflectivity is greatly improved, and the brightness of the silicon-based OLED device can be greatly improved.
2. According to the technical scheme, before an anode metal layer is deposited, a first pixel defining layer is deposited and etched, the first pixel defining layer with a chamfer is manufactured, a photoresist layer and a pixel anode layer are manufactured, the photoresist layer and the pixel anode layer are distinguished from an organic photoresist layer, and the first pixel defining layer limits and protects the anode pixel layer including an Ag layer, so that partial shedding and burr phenomena of Ag in the traditional lift-off process are avoided, the consistency of the conductivity of the pixel anode is ensured, and the uniformity of image display of a silicon-based OLED micro-display product is ensured. In addition, the first pixel definition layer is used, the phenomenon that photoresist and metal are remained on a graph area due to the photoresist collapse phenomenon is avoided, and the display picture quality of a silicon-based display product is improved.
3. According to the technical scheme, the ITO layer is also used on the Ag electrode layer in the anode metal layer, so that the technical effect of distinguishing the use of common ITO is achieved while the work function of the anode is improved. This is mainly reflected in that the ITO layer forms protection for the Ag layer, and the problem that Ag is easily oxidized in the traditional lift-off process is avoided. In silicon-based OLED microdisplay applications, oxidation of Ag will obviously cause a decrease in anode conductivity and a decrease in anode reflectivity.
4. The invention has the technical effects that the first pixel definition layer has the functions of defining the pixel size and avoiding optical crosstalk among pixels besides the technical effects, and the manufacturing procedures of products are reduced.
Drawings
Fig. 1 is a schematic cross-sectional view of an intermediate product formed in step S1;
fig. 2 is a schematic cross-sectional view of the intermediate product formed in step S2;
FIG. 3 is a schematic cross-sectional view of the intermediate product formed in step S3;
FIG. 4 is a schematic cross-sectional view of the intermediate product formed in step S4;
FIG. 5 is a schematic cross-sectional view of the intermediate product formed in step S5;
FIG. 6 is a schematic cross-sectional view of the intermediate product formed in step S6;
FIG. 7 is a schematic cross-sectional view of the intermediate product formed in step S7;
in the figure: 100-silicon substrate, 200-first pixel definition layer, 300-photoresist layer, 400-pixel anode layer, 500-second pixel definition layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Example one
A preparation method of a silicon-based OLED micro-display capable of improving brightness comprises the following steps:
s1, providing a silicon substrate 100; the silicon substrate is provided with a CMOS driving circuit, the silicon substrate is provided with a first surface and a second surface, the CMOS driving circuit is close to the second surface of the silicon substrate and far away from the first surface, and the uppermost part of the second surface comprises a tungsten valve connected with an OLED anode;
s2, depositing a first pixel defining layer 200 on the silicon substrate 100, wherein the first pixel defining layer 200 is silicon oxide; the first pixel defining layer grows by adopting a PECVD method, and the thickness of the first pixel defining layer is 100 nm;
s3, patterning and etching the first pixel definition layer, so that the first pixel definition layer 200 forms a chamfer and exposes the anode pixel region;
s4, coating the photoresist layer 300 and patterning; the patterning of the photoresist layer 300 includes the steps of photoresist coating, exposure, development, photoresist stripping, etc.;
s5, depositing a pixel anode layer on the silicon substrate, wherein the pixel anode layer 400 at least comprises an Ag layer and an ITO layer positioned on the Ag layer;
and S6, removing the photoresist layer to obtain the silicon substrate for preparing the pixel anode, wherein the method for removing the photoresist can be dry stripping or wet stripping.
And S7, continuously performing OLED evaporation, film packaging, color film preparation, cover plate attaching, substrate cutting and binding on the silicon substrate of the prepared pixel anode to obtain the silicon-based OLED product.
Example two
S1, providing a silicon substrate 100; the silicon substrate is provided with a CMOS driving circuit, the silicon substrate is provided with a first surface and a second surface, the CMOS driving circuit is close to the second surface of the silicon substrate and far away from the first surface, and the uppermost part of the second surface comprises a tungsten valve connected with an OLED anode;
s2, depositing a first pixel defining layer 200 on the silicon substrate 100, wherein the first pixel defining layer 200 is silicon oxynitride; the first pixel defining layer grows by adopting a PECVD method, and the thickness of the first pixel defining layer is 2000 nm;
s3, patterning and etching the first pixel defining layer 200, so that the first pixel defining layer 200 forms a chamfer and exposes the anode pixel region;
s4, coating the photoresist layer 300 and patterning; patterning the photoresist pattern layer 300 includes steps of photoresist coating, exposure, development, photoresist stripping, and the like;
s5, depositing a pixel anode layer 400 on the silicon substrate, wherein the pixel anode layer 400 comprises an Ag layer and an ITO layer positioned on the Ag layer; a Ti layer is arranged below the Ag layer, the thickness of the Ti layer is 1 nm, a TiN layer is arranged on the Ag layer, and the thickness of the TiN layer is 10 nm
And S6, removing the photoresist layer 300 to obtain the silicon substrate for preparing the pixel anode, wherein the method for removing the photoresist can be dry stripping or wet stripping.
S7, depositing a second pixel definition layer 500 on the silicon substrate, and patterning and etching the second pixel definition layer 500 to expose the anode pixel area, thereby completing the preparation of the silicon-based OLED pixel anode.
And S8, continuously performing OLED evaporation, film packaging, color film preparation, cover plate attaching, substrate cutting and binding on the silicon substrate of the prepared pixel anode to obtain the silicon-based OLED product.
EXAMPLE III
S1, providing a silicon substrate 100; the silicon substrate is provided with a CMOS driving circuit, the silicon substrate is provided with a first surface and a second surface, the CMOS driving circuit is close to the second surface of the silicon substrate and far away from the first surface, and the uppermost part of the second surface comprises a tungsten valve connected with an OLED anode;
s2, depositing a first pixel definition layer 200 on the silicon substrate 100, wherein the first pixel definition layer 200 is silicon nitride; the first pixel defining layer grows by adopting a PECVD method, and the thickness of the first pixel defining layer 200 is 1000 nm;
s3, patterning and etching the first pixel defining layer 200, so that the first pixel defining layer 200 forms a chamfer and exposes the anode pixel region;
s4, coating the photoresist layer 300 and patterning; the patterning of the photoresist layer 300 includes the steps of photoresist coating, exposure, development, photoresist stripping, etc.;
s5, depositing a pixel anode layer 400 on the silicon substrate, wherein the pixel anode layer 400 comprises an Ag layer and an ITO layer positioned on the Ag layer; a Ti layer is arranged below the Ag layer, the thickness of the Ti layer is 10 nm, a TiN layer is arranged on the Ag layer, and the thickness of the TiN layer is 1 nm
And S6, removing the photoresist layer 300 to obtain the silicon substrate for preparing the pixel anode, wherein the method for removing the photoresist layer 300 can be dry stripping or wet stripping.
S7, depositing a second pixel definition layer 500 on the silicon substrate, and patterning and etching the second pixel definition layer 500 to expose the anode pixel area, thereby completing the preparation of the silicon-based OLED pixel anode.
And S8, continuously performing OLED evaporation, film packaging, color film preparation, cover plate attaching, substrate cutting and binding on the silicon substrate of the prepared pixel anode to obtain the silicon-based OLED product.
Example four
In another embodiment, based on the first embodiment, after the step of S6 is completed, the first pixel definition layer 200 can be completely removed, and the second pixel definition layer 500 can be prepared as the only pixel definition layer used by the device.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A preparation method of a silicon-based OLED micro-display capable of improving brightness is characterized by comprising the following steps:
s1, providing a silicon substrate (100);
s2, depositing a first pixel defining layer (200) on a silicon substrate (100), wherein the first pixel defining layer (200) includes but is not limited to silicon nitride, silicon oxide or silicon oxynitride;
s3, patterning and etching the first pixel defining layer (200) to enable the first pixel defining layer (200) to form a chamfer and expose the anode pixel area;
s4, coating a photoresist layer (300) and patterning;
s5, depositing a pixel anode layer (400) on a silicon substrate (100), the pixel anode layer (400) at least comprising an Ag layer and an ITO layer on top of the Ag layer;
and S6, removing the photoresist layer (300) to obtain the silicon substrate for preparing the pixel anode.
2. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: the silicon substrate (100) is provided with a CMOS driving circuit, the silicon substrate (100) is provided with a first surface and a second surface, the CMOS driving circuit is close to the second surface of the silicon substrate (100) and far away from the first surface, and the uppermost part of the second surface comprises a tungsten valve connected with an OLED anode.
3. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: in the step S2, the first pixel defining layer (200) is grown by PECVD, and the thickness of the first pixel defining layer (200) is 100-2000 nm.
4. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: the step S4 of patterning the photoresist includes steps of coating, exposing, developing, stripping the photoresist, and the like.
5. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: the pixel anode layer (400) in step S5 may further include one or more connection layers, where the connection layer may be a Ti layer or a TiN layer, and the thickness of the connection layer is 1-10 nm.
6. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: the method for removing the photoresist in step S6 may be dry stripping or wet stripping.
7. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: after the step S6 is completed, the method may further include the step S7: and depositing a second pixel definition layer (500) on the silicon substrate (100), and patterning and etching the second pixel definition layer to expose the anode pixel area, thereby completing the preparation of the silicon-based OLED pixel anode.
8. A method of fabricating a silicon based OLED micro-display according to claim 1, characterised in that: after the silicon substrate of the pixel anode is prepared, the preparation of the silicon-based OLED micro-display further comprises the following steps: the manufacturing method comprises the following steps of OLED evaporation, film packaging, color film preparation, cover plate attaching, substrate cutting and binding.
9. A silicon-based OLED micro-display characterised in that it is manufactured using the method of any of claims 1-9.
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| CN113284931A (en) * | 2021-04-02 | 2021-08-20 | 安徽熙泰智能科技有限公司 | Preparation method of improved pixel definition layer of silicon-based OLED micro-display |
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Application publication date: 20210226 |