CN112420938A - Packaging layer, photoelectric device and preparation method thereof - Google Patents
Packaging layer, photoelectric device and preparation method thereof Download PDFInfo
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- CN112420938A CN112420938A CN201910769189.3A CN201910769189A CN112420938A CN 112420938 A CN112420938 A CN 112420938A CN 201910769189 A CN201910769189 A CN 201910769189A CN 112420938 A CN112420938 A CN 112420938A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
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Abstract
The invention discloses an encapsulating layer, a photoelectric device and a preparation method thereof, wherein the photoelectric device comprises a bottom electrode, a top electrode and a light-emitting layer arranged between the bottom electrode and the top electrode, a first encapsulating layer is arranged on the top electrode, and the material of the first encapsulating layer comprises a composite material consisting of graphene foam and a polymer matrix. According to the invention, the first packaging layer can improve the water and oxygen barrier property of the photoelectric device, and meanwhile, due to the fact that the first packaging layer is provided with the graphene foam with high thermal conductivity, the graphene foam can remarkably reduce the interface thermal resistance of the first packaging layer, the thermal conductivity of the first packaging layer is greatly improved, and therefore the stability and the service life of the photoelectric device are improved.
Description
Technical Field
The invention relates to the field of quantum dots, in particular to a packaging layer, a photoelectric device and a preparation method thereof.
Background
The service life of the photoelectric device is shortened mainly due to the fact that oxygen and moisture in air are adsorbed, and moisture in the environment permeates into the device, so that the aging of the device is accelerated, and the service life of the device is shortened. The organic film and the metal electrode are protected by the packaging process, so that the organic film and the metal electrode are protected from the influence of outside air, and finally the purpose of prolonging the service life of the device can be achieved, so that the packaging process has great influence on the service life of the device.
The traditional photoelectric device packaging technology is completed in a glove box with water and oxygen contents lower than 1ppm, manufactured devices are transmitted into the glove box through a linear manipulator in the glove box, a rear cover plate is coated with UV glue through an automatic glue coating machine with a program adjusted, a manufactured photoelectric device substrate is aligned and attached to the rear cover plate coated with the UV glue, a barrier separated from the atmospheric environment is formed after UV exposure, the barrier can effectively prevent water and oxygen in the air from entering the photoelectric device, and the water and oxygen are prevented from reacting with an organic film and a metal electrode in the photoelectric device.
However, the conventional rear cover type packaging method has the following disadvantages: the metal rear cover is easy to generate warping deformation, microcrack and expansion and is easy to be brittle; in the traditional packaging mode, the periphery of the photoelectric device substrate needs to be bonded by using UV glue, and the UV glue is loose and porous after being cured, so that water vapor and oxygen can easily pass through the UV glue; the traditional packaging method needs to embed a moisture absorbent, and the device is easy to deform due to expansion after water absorption, so that the device is further damaged. Currently, the packaging technology of commercial photoelectric devices is being developed from the conventional cover plate type packaging to the novel thin film integrated packaging. The film package realizes the dream of flexible display, but the service life and stability of the package at the present stage need to be further improved, the cost advantage is not great, and the advantage is not very obvious compared with the traditional package.
Therefore, the prior art is still to be improved.
Disclosure of Invention
In view of the defects of the prior art, the present invention aims to provide an encapsulation layer, a photovoltaic device and a manufacturing method thereof, and aims to solve the problems of short service life and poor stability of the photovoltaic device due to poor encapsulation effect of the conventional photovoltaic device.
The technical scheme of the invention is as follows:
an encapsulation layer, wherein the encapsulation layer comprises a first encapsulation layer material comprising a composite material consisting of graphene foam and a polymer matrix.
A method for preparing an encapsulation layer, comprising the following steps:
mixing the graphene foam and a polymer matrix to form a composite;
and depositing the composite material into a film to obtain a first packaging layer.
An optoelectronic device comprises a bottom electrode, a top electrode and a light emitting layer arranged between the bottom electrode and the top electrode, wherein a first packaging layer is arranged on the top electrode, and the first packaging layer is made of a composite material composed of graphene foam and a polymer matrix.
A method of fabricating an optoelectronic device, comprising the steps of:
providing a bottom electrode, and preparing a light-emitting layer on the bottom electrode;
preparing a top electrode on the light emitting layer;
and preparing a first packaging layer on the top electrode to obtain the photoelectric device, wherein the first packaging layer is made of a composite material consisting of graphene foam and a polymer matrix.
Has the advantages that: the photoelectric device provided by the invention comprises a first packaging layer arranged on a top electrode, wherein the first packaging layer is made of a composite material consisting of graphene foam and a polymer matrix, the first packaging layer can improve the water and oxygen barrier property of the photoelectric device, and meanwhile, as the graphene foam with high thermal conductivity is arranged in the first packaging layer, the graphene foam can obviously reduce the interface thermal resistance of the first packaging layer and greatly improve the thermal conductivity of the first packaging layer, so that the stability and the service life of the photoelectric device are improved.
Drawings
Fig. 1 is a schematic structural diagram of a preferred embodiment of an encapsulation layer according to the present invention.
Fig. 2 is a schematic structural diagram of a preferred embodiment of an optoelectronic device according to the present invention.
FIG. 3 is a flow chart of a preferred embodiment of a method for fabricating an optoelectronic device according to the present invention.
Fig. 4 is a schematic structural view of an optoelectronic device in embodiment 1 of the present invention.
Detailed Description
The invention provides a packaging layer, a photoelectric device and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and more clear and definite. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, an embodiment of the present invention provides an encapsulation layer 01, where the encapsulation layer 01 includes a first encapsulation layer 02, and a material of the first encapsulation layer 02 includes a composite material composed of graphene foam and a polymer matrix.
In the embodiment, the graphene foam is a porous graphene aggregate with an interconnected structure in three-dimensional space, and the formation of the porous structure can effectively avoid the excessive stacking of graphene sheets, and maintain the water and oxygen barrier performance of a graphene sheet single-layer structure or a few-layer structure. The graphene foam has excellent water and oxygen barrier property, and can induce the crystallization of the polymer matrix after being mixed with the polymer matrix, so that the water and oxygen permeation path of the polymer matrix is effectively improved, and the water and oxygen barrier property of the first packaging layer is improved. Atoms forming crystals in the graphene foam structure are not fixed at each balance position but vibrate around the balance position, the vibration mode of the graphene foam is beneficial to phonon and electron transmission, interface thermal resistance can be reduced, the thermal conductivity of a polymer matrix can be effectively improved under low content, and therefore the thermal conductivity of the first packaging layer is improved, part of energy converted from electric energy to thermal energy in the light-emitting process of the photoelectric device can be conducted out through the first packaging layer more easily, heat dissipation of the photoelectric device is facilitated, the film layer structure of each functional layer in the photoelectric device is protected, and the service life and stability of the photoelectric device are finally improved.
In some embodiments, the first encapsulation layer material may further include other materials having higher thermal conductivity and water-oxygen barrier property, and may further include one or more of graphite, carbon nanotube, carbon fiber, etc., by way of example and not limitation.
In some embodiments, as shown in fig. 1, the encapsulation layer 01 further includes a second encapsulation layer 03 disposed on the first encapsulation layer 02, and the material of the second encapsulation layer 03 is molybdenum disilicide. In the embodiment, the second packaging layer consisting of molybdenum disilicide is prepared on the first packaging layer, so that a good covering step can be formed on the photoelectric device, the corrosion of water and oxygen to the photoelectric device can be effectively prevented, and the service life of the photoelectric device is prolonged.
In some embodiments, as shown in fig. 1, the encapsulation layer 01 further includes a silica thin film 04 disposed on the second encapsulation layer 03, and the silica thin film 04 is grafted with hexadecyl trimethoxy silane on the surface. In this embodiment, the second encapsulating layer is made of molybdenum disilicide, which can undergo a severe oxidation reaction when encountering oxygen at normal temperature to differentiate into a dense silica film, and the silica film can effectively prevent water and oxygen from permeating, so that the service life of the photoelectric device is further prolonged. Further, through modification treatment of the silicon dioxide film, hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film 03, and the hexadecyl trimethoxy silane is used as a non-polar long-chain structure, so that a thin protective layer can be formed on the surface of the silicon dioxide film to prevent invasion of external pollutants, and further the water and oxygen barrier performance of the packaging layer is improved.
In some embodiments, there is provided a method for preparing an encapsulation layer, comprising the steps of:
mixing the graphene foam and a polymer matrix to form a composite;
depositing the composite material into a film to prepare a first packaging layer;
under the heating condition, taking inert gas as carrier gas, conveying silicon source steam and molybdenum source steam to the surface of the first packaging layer, and generating a molybdenum disilicide film on the first packaging layer to obtain a second packaging layer;
carrying out oxidation treatment on the molybdenum disilicide film on the photoelectric device to generate a silicon dioxide film on the surface of the molybdenum disilicide film;
and placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film.
In some embodiments, there is also provided an optoelectronic device, as shown in fig. 2, the optoelectronic device includes a bottom electrode 10, a light emitting layer 20, a top electrode 30, and a first encapsulation layer 02 stacked from bottom to top, and the first encapsulation layer 02 material includes a composite material composed of graphene foam and a polymer matrix.
The photoelectric device of the embodiment adopts the composite material consisting of the graphene foam and the polymer matrix as the first packaging layer material, so that the water and oxygen barrier property of the first packaging layer can be improved, the heat conductivity of the first packaging layer can be improved, and the stability and the service life of the photoelectric device are improved. The mechanism for achieving the above effects is specifically as follows:
the graphene foam is a porous graphene aggregate with an interconnected structure in a three-dimensional space, and the formation of the porous structure can effectively avoid the excessive stacking of graphene sheets and maintain the water and oxygen barrier performance of a graphene sheet single-layer structure or a few-layer structure. The graphene foam has excellent water and oxygen barrier property, and can induce the crystallization of the polymer matrix after being mixed with the polymer matrix, so that the water and oxygen permeation path of the polymer matrix is effectively improved, and the water and oxygen barrier property of the first packaging layer is improved.
Atoms forming crystals in the graphene foam structure are not fixed at each balance position but vibrate around the balance position, the vibration mode of the graphene foam is beneficial to phonon and electron transmission, interface thermal resistance can be reduced, the thermal conductivity of a polymer matrix can be effectively improved under low content, and therefore the thermal conductivity of the first packaging layer is improved, part of energy converted from electric energy to thermal energy in the light-emitting process of the photoelectric device can be conducted out through the first packaging layer more easily, heat dissipation of the photoelectric device is facilitated, the film layer structure of each functional layer in the photoelectric device is protected, and the service life and stability of the photoelectric device are finally improved.
In some embodiments, the graphene foam has a mass fraction of 0.2 to 1 wt% in the first encapsulation layer. The graphene foam is 0.2-1 wt%, and can effectively induce the polymer matrix to crystallize so as to improve the water and oxygen permeation path of the polymer matrix, thereby improving the water and oxygen barrier property of the first packaging layer; however, with the increase of the foam content of the graphene, if the foam content is greater than 1 wt%, the graphene is significantly agglomerated, the movement of molecular chains of the polymer matrix is hindered, the free volume between molecules of the polymer matrix is increased, and the water and oxygen barrier performance of the first encapsulation layer begins to be reduced.
In some embodiments, the polymer matrix is selected from one or more of epoxy, polyethylene terephthalate, polyvinyl alcohol, and polyurethane, but is not limited thereto. In some embodiments, the polymer matrix is polyethylene terephthalate, which has the advantages of light weight, low cost, and ease of processing. When the composite material consisting of the graphene foam and the polyethylene glycol terephthalate is used as the material of the first packaging layer, compared with the traditional packaging cover plate, the prepared first packaging layer has the characteristics of light weight, thinness, high efficiency and the like, and the defect that the traditional packaging cover plate is fragile is overcome.
In some embodiments, the thickness of the first encapsulation layer is 300-500 nm.
In some embodiments, as shown in fig. 2, the optoelectronic device further comprises a second encapsulation layer 03 disposed on the first encapsulation layer 02, the second encapsulation layer material being molybdenum disilicide. In the embodiment, the second packaging layer consisting of molybdenum disilicide is prepared on the first packaging layer, so that a good covering step can be formed on the photoelectric device, the corrosion of water and oxygen to the photoelectric device can be effectively prevented, and the service life of the photoelectric device is prolonged.
In some embodiments, the thickness of the second encapsulation layer is 100-300 nm.
In some embodiments, as shown in fig. 2, the photovoltaic device further includes a silica film 04 disposed on the second encapsulation layer 03, and the silica film 04 is surface-grafted with hexadecyl trimethoxysilane. In this embodiment, the second encapsulating layer is made of molybdenum disilicide, which can undergo a severe oxidation reaction when encountering oxygen at normal temperature to differentiate into a dense silica film, and the silica film can effectively prevent water and oxygen from permeating, so that the service life of the photoelectric device is further prolonged. Further, through modification treatment of the silicon dioxide film, hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film 04, and the hexadecyl trimethoxy silane is used as a non-polar long-chain structure, so that a thin protective layer can be formed on the surface of the silicon dioxide film to prevent invasion of external pollutants, and further the water and oxygen barrier performance of the packaging structure is improved.
In some embodiments, a hole function layer is further disposed between the bottom electrode and the light emitting layer, and the hole function layer is a hole transport layer; or the hole function layer is a hole injection layer; or the hole function layer is a hole transport layer and a hole injection layer.
In some embodiments, the hole injection layer material is selected from, but not limited to, PEDOT: PSS.
In some embodiments, the hole transport layer material is selected from TFB, PVK, Poly-TPD, NiO, MoO3And NPB, but not limited thereto.
In some embodiments, the bottom electrode is an ITO electrode or an Al electrode.
In some embodiments, the anode material is elemental Al, Ag, Mg, or an alloy thereof.
In some embodiments, an electron transport layer is further disposed between the light emitting layer and the top electrode, and the electron transport layer is made of a material selected from ZnO, Cs2CO3And Alq3, but is not limited thereto.
In some embodiments, the light emitting layer material is selected from one or more of core-shell quantum dots, phosphorescent materials, fluorescent light emitting materials, and graded-shell quantum dot materials, but is not limited thereto. The quantum dot light emitting layer material is selected from one or more of group II-VI compounds, group III-V compounds and group II-III-VI compounds, but is not limited thereto; wherein the II-VI compound is selected from one or more of CdSe, CdS, ZnSe, CdS, PbS and PbSe; the III-V compound is selected from one or two of InP and InAs; the II-III-VI compound is selected from CuInS2And AgInS2One or two of them.
In some embodiments, there is also provided a method for manufacturing an optoelectronic device, wherein, as shown in fig. 3, the method comprises the steps of:
s10, providing a bottom electrode, and preparing a light-emitting layer on the bottom electrode;
s20, preparing a top electrode on the light-emitting layer;
s30, preparing a first packaging layer on the top electrode to obtain the photoelectric device, wherein the first packaging layer is made of a composite material consisting of graphene foam and a polymer matrix.
In the present invention, the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ionic layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; the physical method includes, but is not limited to, one or more of solution method (such as spin coating, printing, knife coating, dip-coating, dipping, spraying, roll coating, casting, slit coating, or bar coating), evaporation method (such as thermal evaporation, electron beam evaporation, magnetron sputtering, or multi-arc ion plating), deposition method (such as physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.).
In some embodiments, in step S30, after the polymer matrix and the graphene foam are dried in the oven respectively, the weight ratio of the graphene foam to the polymer matrix is 0.2-1: 99-99.8, stirring and mixing the graphene foam and the polymer matrix to form a composite material, preparing the composite material into ink with certain viscosity, and printing the ink on a top electrode of the photoelectric device to form a film, so as to obtain a first packaging layer, wherein the thickness of the first packaging layer can be determined by the drop number of the printed ink. In some embodiments, the thickness of the first encapsulation layer is 300-500 nm.
In some embodiments, the step S30 is followed by the step of: the photoelectric device is placed in a CVD vacuum chamber in advance, under the heating condition of 500 ℃, inert gas is used as carrier gas, silicon source steam and molybdenum source steam are conveyed to the surface of a first packaging layer of the photoelectric device, a molybdenum disilicide film is generated on the first packaging layer through reaction, the molybdenum disilicide film is a second packaging layer, and the thickness of the silicon dioxide film can be controlled through the concentration of the silicon source steam and the molybdenum source steam and the reaction time. In some embodiments, the thickness of the second encapsulation layer is 100-300 nm. In some embodiments, the silicon source is silane and the molybdenum source is molybdenum oxide.
In some embodiments, the molybdenum disilicide film is subjected to surface treatment in an oxygen atmosphere for 4 to 10 hours, so that a dense silicon dioxide film is formed on the surface of the molybdenum disilicide film, and the silicon dioxide film can effectively prevent oxygen from permeating. The silicon dioxide film is placed in an ammonia water atmosphere for pretreatment, so that silicon dioxide particles are subjected to dehydration condensation through hydroxyl on the surface to form Si-O-Si strong chemical bond crosslinking, and the silicon dioxide film is more compact due to the crosslinking of the chemical bond; further, the silicon dioxide film is placed in an ammonia water atmosphere and a hexadecyl trimethoxy silane atmosphere for modification treatment, the hexadecyl trimethoxy silane is hydrolyzed to form silane hydroxyl, the silane hydroxyl and polar hydroxyl groups on the surface of the silicon dioxide film can perform a condensation polymerization reaction, so that long-chain functional groups of the hexadecyl trimethoxy silane are grafted to the surface of the silicon dioxide film, and the nonpolar long-chain functional groups can form a thin protective layer on the surface of the silicon dioxide film to prevent external pollutants from entering, so that the barrier property of the packaging structure is improved.
The photoelectric device and the method for manufacturing the same according to the present invention are further illustrated by the following specific examples:
example 1
A photoelectric device comprises an ITO substrate 11, a hole injection layer 12, a hole transport layer 13, a quantum dot light emitting layer 14, an electron transport layer 15, a top electrode 16, a first packaging layer 17, a second packaging layer 18 and a silicon dioxide film 19 which are sequentially stacked from bottom to top, wherein hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film; the hole injection layer is made of PEDOT: PSS, a hole transport layer is made of poly-TPD, an electron transport layer is made of ZnO, a top electrode is made of Ag/Mg, a first packaging layer is made of a composite material consisting of polyethylene terephthalate and graphene foam, and a second packaging layer is made of molybdenum disilicide.
A method of fabricating an opto-electrical device as shown in fig. 3, comprising the steps of:
deposition of PEDOT on an ITO substrate: PSS, and preparing a hole injection layer with the thickness of 50 nm;
depositing poly-TPD on the hole injection layer to prepare a hole transport layer with the thickness of 30 nm;
preparing a quantum dot light-emitting layer with the thickness of 20nm on the hole transport layer;
after annealing treatment is carried out on the quantum dot light-emitting layer, ZnO is deposited on the quantum dot light-emitting layer, and an electron transmission layer is prepared, wherein the thickness of the electron transmission layer is about 30 nm;
evaporating Ag/Mg alloy on the electron transport layer to prepare a top electrode, wherein the thickness of the top electrode is 50nm, and the evaporation speed is 0.1-0.3 nm/s;
under the conditions that the temperature is 260 ℃ and the stirring speed is 50r/min, 0.3 wt% of graphene foam is added into polyethylene terephthalate and blended for 10min to prepare the composite material; preparing the composite material into ink, printing the ink on the top electrode to form a film, wherein the number of drops of the printed ink is 15 drops, and then forming the film under the conditions of vacuum drying and baking drying to obtain a first packaging layer, wherein the thickness of the first packaging layer is 300 nm;
heating 40mg of silane powder and 2mg of molybdenum oxide powder in a vacuum chamber by adopting a CVD (chemical vapor deposition) method for reacting for 20min, wherein the argon flow is 10sccm, and generating a 100nm molybdenum disilicide film on the first packaging layer to obtain a second packaging layer;
placing the molybdenum disilicide film in an oxygen atmosphere for surface treatment, so that a layer of compact silicon dioxide film is formed on the surface of the molybdenum disilicide film; and (2) placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film, and the final photoelectric device is prepared.
Example 2
A photoelectric device comprises an Ag + ITO substrate, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, a top electrode, a first packaging layer, a second packaging layer and a silicon dioxide film which are sequentially stacked from bottom to top, wherein hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film; the hole injection layer is made of PEDOT: PSS, a hole transport layer is made of poly-TPD, an electron transport layer is made of ZnO, a top electrode is made of Ag/Mg, a first packaging layer is made of a composite material composed of polyethylene and graphene foam, and a second packaging layer is made of molybdenum disilicide.
A method of fabricating an optoelectronic device as in example 2, comprising the steps of:
deposition of PEDOT on Ag + ITO substrates: PSS, and preparing a hole injection layer with the thickness of 50 nm;
depositing poly-TPD on the hole injection layer to prepare a hole transport layer with the thickness of 30 nm;
preparing a quantum dot light-emitting layer with the thickness of 30nm on the hole transport layer;
after annealing treatment is carried out on the quantum dot light-emitting layer, ZnO is deposited on the quantum dot light-emitting layer, and an electron transmission layer is prepared, wherein the thickness of the electron transmission layer is about 30 nm;
evaporating Ag/Mg alloy on the electron transport layer to prepare a top electrode, wherein the thickness of the top electrode is 50nm, and the evaporation speed is 0.1-0.3 nm/s;
under the conditions that the temperature is 250 ℃ and the stirring speed is 50r/min, 0.8 wt% of graphene foam is added into polyethylene and blended for 10min to prepare the composite material; preparing the composite material into ink, printing the ink on the top electrode to form a film, wherein the number of drops of the printed ink is 15 drops, and then forming the film under the conditions of vacuum drying and baking drying to obtain a first packaging layer, wherein the thickness of the first packaging layer is 300 nm;
heating 40mg of silane powder and 2mg of molybdenum oxide powder in a vacuum chamber by adopting a CVD (chemical vapor deposition) method for reacting for 20min, wherein the argon flow is 10sccm, and generating a 100nm molybdenum disilicide film on the first packaging layer to obtain a second packaging layer;
placing the molybdenum disilicide film in an oxygen atmosphere for surface treatment, so that a layer of compact silicon dioxide film is formed on the surface of the molybdenum disilicide film; and (2) placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film, and the final photoelectric device is prepared.
Example 3
A photoelectric device comprises an ITO substrate, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, a top electrode, a first packaging layer, a second packaging layer and a silicon dioxide film which are sequentially stacked from bottom to top, wherein hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film; the hole injection layer is made of PEDOT: PSS, a hole transport layer is made of poly-TPD, an electron transport layer is made of ZnO, a top electrode is made of Ag/Mg, a first packaging layer is made of a composite material composed of polyurethane and graphene foam, and a second packaging layer is made of molybdenum disilicide.
A method of fabricating an optoelectronic device as in example 3, comprising the steps of:
deposition of PEDOT on Ag + ITO substrates: PSS, and preparing a hole injection layer with the thickness of 50 nm;
depositing poly-TPD on the hole injection layer to prepare a hole transport layer with the thickness of 30 nm;
preparing a quantum dot light-emitting layer with the thickness of 30nm on the hole transport layer;
after annealing treatment is carried out on the quantum dot light-emitting layer, ZnO is deposited on the quantum dot light-emitting layer, and an electron transmission layer is prepared, wherein the thickness of the electron transmission layer is about 30 nm;
evaporating Ag/Mg alloy on the electron transport layer to prepare a top electrode, wherein the thickness of the top electrode is 50nm, and the evaporation speed is 0.1-0.3 nm/s;
under the conditions that the temperature is 250 ℃ and the stirring speed is 50r/min, 0.3 wt% of graphene foam is added into polyurethane and blended for 10min to prepare a composite material; preparing the composite material into ink, printing the ink on the top electrode to form a film, wherein the number of drops of the printed ink is 19, and then forming the film under the conditions of vacuum drying and baking drying to obtain a first packaging layer, wherein the thickness of the first packaging layer is 500 nm;
heating 40mg of silane powder and 2mg of molybdenum oxide powder in a vacuum chamber by adopting a CVD (chemical vapor deposition) method for reacting for 50min, wherein the argon flow is 10sccm, and generating a 300nm molybdenum disilicide film on the first packaging layer to obtain a second packaging layer;
placing the molybdenum disilicide film in an oxygen atmosphere for surface treatment, so that a layer of compact silicon dioxide film is formed on the surface of the molybdenum disilicide film; and (2) placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film, and the final photoelectric device is prepared.
In summary, the photovoltaic device provided by the invention includes the first encapsulation layer disposed on the top electrode, the first encapsulation layer material includes a composite material composed of graphene foam and a polymer matrix, the first encapsulation layer can improve the water and oxygen barrier performance of the photovoltaic device, and meanwhile, because the graphene foam with high thermal conductivity is disposed in the first encapsulation layer, the graphene foam can significantly reduce the interface thermal resistance of the first encapsulation layer, and greatly improve the thermal conductivity of the first encapsulation layer, thereby improving the stability and the service life of the photovoltaic device; the first packaging layer is also provided with a second packaging layer consisting of molybdenum disilicide, so that a good covering step can be formed on the photoelectric device, and the corrosion of water and oxygen to the photoelectric device can be more effectively prevented; furthermore, the second packaging layer is further provided with a silicon dioxide film, the surface of the silicon dioxide film is grafted with hexadecyl trimethoxy silane, and the hexadecyl trimethoxy silane is used as a non-polar long-chain structure and can form a thin protective layer on the surface of the silicon dioxide film to prevent the invasion of external pollutants, so that the water and oxygen barrier performance of the packaging structure is improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (14)
1. An encapsulation layer, comprising a first encapsulation layer, wherein the first encapsulation layer material comprises a composite material comprising a graphene foam and a polymer matrix.
2. The encapsulation layer of claim 1, further comprising a second encapsulation layer disposed on the first encapsulation layer, the second encapsulation layer being molybdenum disilicide.
3. The encapsulation layer according to claim 2, further comprising a silicon dioxide film disposed on the second encapsulation layer, wherein hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film.
4. A preparation method of an encapsulation layer is characterized by comprising the following steps:
mixing the graphene foam and a polymer matrix to form a composite;
and depositing the composite material into a film to obtain a first packaging layer.
5. The method for preparing the encapsulation layer according to claim 4, further comprising the steps of:
under the heating condition, taking inert gas as carrier gas, conveying silicon source steam and molybdenum source steam to the surface of the first packaging layer, and generating a molybdenum disilicide film on the first packaging layer to obtain a second packaging layer.
6. The method for preparing the encapsulation layer according to claim 5, further comprising the steps of:
carrying out oxidation treatment on the molybdenum disilicide film, and generating a silicon dioxide film on the surface of the molybdenum disilicide film;
and placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film.
7. An optoelectronic device comprises a bottom electrode, a top electrode and a light emitting layer arranged between the bottom electrode and the top electrode, wherein a first packaging layer is arranged on the top electrode, and the first packaging layer is characterized in that the material of the first packaging layer comprises a composite material composed of graphene foam and a polymer matrix.
8. The optoelectronic device according to claim 7, wherein a second encapsulation layer is disposed on the first encapsulation layer, the second encapsulation layer being molybdenum disilicide.
9. The photoelectric device according to claim 8, wherein a silicon dioxide film is arranged on the second encapsulation layer, and hexadecyl trimethoxy silane is grafted on the surface of the silicon dioxide film.
10. The optoelectronic device according to any of claims 7 to 9, wherein the polymer matrix is selected from one or more of epoxy, polyethylene terephthalate, polyvinyl alcohol and polyurethane.
11. The optoelectronic device according to any one of claims 7 to 9, wherein the graphene foam has a mass fraction of 0.2 to 1 wt% in the first encapsulation layer.
12. A method of fabricating an optoelectronic device, comprising the steps of:
providing a bottom electrode, and preparing a light-emitting layer on the bottom electrode;
preparing a top electrode on the light emitting layer;
and preparing a first packaging layer on the top electrode to obtain the photoelectric device, wherein the first packaging layer is made of a composite material consisting of graphene foam and a polymer matrix.
13. The method of fabricating an optoelectronic device according to claim 12, further comprising the steps of:
under the heating condition, inert gas is used as carrier gas, silicon source steam and molybdenum source steam are conveyed to the surface of a first packaging layer of the photoelectric device, a molybdenum disilicide film is generated on the first packaging layer, and the molybdenum disilicide film is a second packaging layer.
14. The method of fabricating an optoelectronic device according to claim 13, further comprising the steps of:
carrying out oxidation treatment on the molybdenum disilicide film on the photoelectric device to generate a silicon dioxide film on the surface of the molybdenum disilicide film;
and placing the silicon dioxide film in an ammonia water atmosphere for pretreatment, and then placing the silicon dioxide film in an ammonia water and hexadecyl trimethoxy silane atmosphere for modification treatment, so that the hexadecyl trimethoxy silane is grafted to the surface of the silicon dioxide film.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796346A (en) * | 2014-02-27 | 2014-05-14 | 上海理工大学 | High-temperature nano-electrothermal film of double-film structure and preparation method thereof |
| CN105602297A (en) * | 2015-11-17 | 2016-05-25 | 天津理工大学 | Method for preparing superhydrophobic coating layer through composite of inorganic nano-particles with different average particle sizes |
-
2019
- 2019-08-20 CN CN201910769189.3A patent/CN112420938A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796346A (en) * | 2014-02-27 | 2014-05-14 | 上海理工大学 | High-temperature nano-electrothermal film of double-film structure and preparation method thereof |
| CN105602297A (en) * | 2015-11-17 | 2016-05-25 | 天津理工大学 | Method for preparing superhydrophobic coating layer through composite of inorganic nano-particles with different average particle sizes |
Non-Patent Citations (1)
| Title |
|---|
| ZHIDUO LIU: "Exceptionally high thermal and electrical conductivity of three dimensional graphene foam based polymer composites", 《RSC ADVANCES》 * |
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