CN112420860A - Planar APD epitaxial structure, APD and manufacturing method thereof - Google Patents
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Abstract
The application relates to an epitaxial structure of a planar APD, the APD and a manufacturing method thereof, wherein the epitaxial structure of the planar APD comprises a multiplication layer, the multiplication layer comprises at least one group of multiplication units, the multiplication units sequentially comprise a carrier acceleration area and an impact ionization area from top to bottom, the carrier acceleration area is an intrinsic InAlAs material, and the impact ionization area is an intrinsic InP material. The epitaxial structure of the planar APD provided by the application can reduce the excessive noise, and is convenient to control the diffusion depth in the manufacturing of the APD.
Description
Technical Field
The present disclosure relates to avalanche photodiode technologies, and in particular, to an epitaxial structure of a planar APD, an APD, and a method for fabricating the APD.
Background
Avalanche photodiodes APDs typically employ SAGCM structures, i.e., split absorption-transition-charge-multiplication structures in which the multiplication layer undergoes an avalanche effect at the operating voltage to provide device internal gain amplification.
According to different types of carriers which cause avalanche effect, the multiplication layer materials are divided into two types of hole multiplication and electron multiplication, the impact ionization coefficient of holes in the hole multiplication materials is larger than that of electrons, and the impact ionization coefficient of holes in the electron multiplication materials is smaller than that of electrons. The ratio of the ionization coefficients of the multiplication layer materials is recorded as k0Definition of k0α/β, where α is the electron impact ionization coefficient and β is the hole impact ionization coefficient.
For alpha<β, i.e. hole multiplication, defining a normalized ionization coefficient ratio k ═ k0(ii) a For alpha>Beta, i.e. electron multiplication, defining a normalized ionization coefficient ratio k of 1/k0Is made 0<k<1. The normalized ionization coefficient ratio k is closely related to the APD's excess noise coefficient F. The smaller k indicates that the avalanche effect is closer to a single carrier. The smaller F, the higher the APD sensitivity.
The existing avalanche photodiode APD generally adopts materials such as InAlGaAs and InAlAs, and the like, and limits impact ionization in a narrow band gap material through doping control to realize the avalanche photodiode APD with a low k value, and the technology is called as impact ionization engineering (I)2E, i.e., Impact-Ionization Engineered), requires precise control of I2The thickness and doping of each layer of the E-structure multiplication layer are high in manufacturing difficulty, and accurate control is difficult to achieve, so that the existing control precision is low and the manufacturing cost is high.
Disclosure of Invention
The embodiment of the application provides an epitaxial structure of a planar APD, an APD and a manufacturing method thereof, so as to solve the problem that I needs to be accurately controlled in the related art2The thickness and doping of each layer of the E structure multiplication layer are large in manufacturing difficulty, and accurate control is difficult to realize.
In a first aspect, an epitaxial structure of a planar APD is provided, which includes a multiplication layer, where the multiplication layer includes at least one set of multiplication units, the multiplication units include, from top to bottom, a carrier acceleration region and a collisional ionization region, and the carrier acceleration region is an intrinsic InAlAs material, and the collisional ionization region is an intrinsic InP material.
In some embodiments, the multiplication layer includes a plurality of sets of multiplication units, and all of the multiplication units are sequentially stacked.
In some embodiments, the number of sets of the multiplying units is 1-5.
In some embodiments, the epitaxial structure comprises a contact layer, a multiplication layer, a charge layer, a transition layer, an absorption layer, a buffer layer and a substrate from top to bottom in sequence.
In some embodiments, the contact layer is an intrinsic InP material, the charge layer is an N-type InP material, the transition layer is an intrinsic InGaAsP material, the absorption layer is an intrinsic InGaAs material, the buffer layer is an N-type InP material, and the substrate is an N-type InP material.
In some embodiments, the contact layer has a thickness of 2 to 3 μm, the charge layer has a thickness of 0.1 to 0.3 μm, the transition layer has a thickness of 60 to 120nm, the absorption layer has a thickness of 1 to 3 μm, and the buffer layer has a thickness of 0.5 to 1 μm.
In some embodiments, the multiplication layer comprises four sets of multiplication units, and the thicknesses of the four sets of carrier acceleration regions and impact ionization regions are 50 nm.
In a second aspect, an APD is provided, wherein the avalanche photodiode APD is fabricated by performing a zinc diffusion process on the epitaxial structure of the planar APD.
In a third aspect, a method for fabricating an APD is provided, including the steps of:
manufacturing an epitaxial structure of a planar APD, wherein the epitaxial structure comprises a multiplication layer, the multiplication layer comprises at least one group of multiplication units, the multiplication units sequentially comprise a carrier acceleration region and an impact ionization region from top to bottom, the carrier acceleration region is made of intrinsic InAlAs materials, and the impact ionization region is made of intrinsic InP materials;
and performing zinc diffusion on the epitaxial structure of the planar APD, and manufacturing an electrode to form an APD structure.
In some embodiments, the specific steps for fabricating the epitaxial structure of the planar APD include:
the substrate, the buffer layer, the absorption layer, the transition layer, the charge layer, the multiplication layer and the contact layer are sequentially manufactured from bottom to top.
The beneficial effect that technical scheme that this application provided brought includes: the excess noise can be reduced while, at the same time, the diffusion depth can be easily controlled in APD fabrication.
The embodiment of the application provides a multiplication layer of an epitaxial structure of a planar APD, which is formed by alternately adopting an intrinsic InAlAs material and an intrinsic InP material, and the intrinsic InAlAs material has small processing difficulty and greatly reduces the manufacturing difficulty.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a multiplication layer provided in an embodiment of the present application;
fig. 2 is a schematic diagram of an epitaxial structure of a planar APD according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of an APD provided in an embodiment of the present application;
fig. 4 is a flowchart of a method for fabricating an APD according to an embodiment of the present application;
FIG. 5 is a diagram illustrating simulation results of an electric field distribution of an APD according to an embodiment of the present application;
FIG. 6 is a schematic diagram of simulation results of impact ionization coefficients of holes according to an embodiment of the present application
Fig. 7 is a diagram illustrating simulation results of impact ionization coefficients of electrons according to an embodiment of the present application.
1. A contact layer; 2. a multiplication layer; 3. a charge layer; 4. a transition layer; 5. an absorbing layer; 6. a buffer layer; 7. a substrate; 20. a multiplying unit; 21. a carrier acceleration region; 22. colliding with the ionization region.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 and 2, an epitaxial structure of a planar APD is provided in an embodiment of the present application, which includes a multiplication layer 2, where the multiplication layer 2 includes at least one set of multiplication units 20, the multiplication units 20 include, in order from top to bottom, a carrier acceleration region 21 and a collisional ionization region 22, and the carrier acceleration region 21 is an intrinsic InAlAs material and the collisional ionization region 22 is an intrinsic InP material.
The multiplication layer 2 of the epitaxial structure of the planar APD is formed by alternately adopting the intrinsic InAlAs material and the intrinsic InP material, the processing difficulty is small due to the intrinsic material, the manufacturing difficulty is greatly reduced, and the diffusion front edge is positioned in the intrinsic InAlAs material due to the fact that the diffusion speed of zinc in the intrinsic InAlAs material is far slower than that of the intrinsic InP material, and the diffusion depth is convenient to control in the manufacturing process of the APD, and meanwhile, the excessive noise can be reduced.
Further, in the embodiment of the present application, the multiplication layer 2 includes a plurality of sets of multiplication units 20, and all the multiplication units 20 are sequentially stacked.
Preferably, in the embodiment of the present application, the number of groups of the multiplication units 20 is 1 to 5, that is, the multiplication layer 2 includes 1 to 5 groups of multiplication units 20, and the number of groups of the multiplication units 20 is selected according to the bandwidth and amplification requirement of the APD, so that the application range of the epitaxial structure of the planar APD of the present application is wider.
In practical applications, the larger the number of sets of the multiplying units 20, the larger the amplification factor of the APD, but the lower the bandwidth, and the setting of the number of sets of the multiplying units 20 should be performed according to the requirements of different APDs on the amplification factor and the bandwidth.
Referring to fig. 2, in the embodiment of the present application, the epitaxial structure includes, in order from top to bottom, a contact layer 1, a multiplication layer 2, a charge layer 3, a transition layer 4, an absorption layer 5, a buffer layer 6, and a substrate 7. The contact layer 1 is made of an intrinsic InP material, the charge layer 3 is made of an N-type InP material, the transition layer 4 is made of an intrinsic InGaAsP material, the absorption layer 5 is made of an intrinsic InGaAs material, the buffer layer 6 is made of an N-type InP material, and the substrate 7 is made of an N-type InP material.
Furthermore, the transition layer 4 is In with gradually changed composition1-xGaxAsyP1-yWherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and the component y is continuously gradually or in a step-changing way from 1 to 0.
In the embodiment of the application, the thickness of the contact layer 1 is 2-3 μm, the thickness of the charge layer 3 is 0.1-0.3 μm, the thickness of the transition layer 4 is 60-120 nm, the thickness of the absorption layer 5 is 1-3 μm, and the thickness of the buffer layer 6 is 0.5-1 μm.
Preferably, in the embodiment of the present application, taking four sets of the multiplication units 20 as an example, the multiplication layer 2 includes four sets of the multiplication units 20, the thicknesses of the four sets of the carrier acceleration regions 21 and the impact ionization regions 22 are all 50nm, and the thickness of the multiplication layer 2 is 4 × a (50nm +50 nm).
In the embodiment of the present application, when different numbers of sets of the multiplying units 20 are adopted according to design requirements, the thicknesses of the carrier acceleration region 21 and the impact ionization region 22 are determined according to the average impact ionization distance of carriers and the electric field intensity of the multiplication layer.
Referring to fig. 3, an embodiment of the present application further provides an avalanche photodiode APD, which is fabricated by performing a zinc diffusion process on an epitaxial structure of the planar APD.
In the embodiment of the present application, the multiplication layer 2 includes four sets of multiplication units 20, each multiplication unit 20 includes, from top to bottom, a carrier acceleration region 21 and a collisional ionization region 22, and the carrier acceleration region 21 is an intrinsic InAlAs material, and the collisional ionization region 22 is an intrinsic InP material.
The avalanche photodiode APD forms a zinc diffusion region after a zinc diffusion process, and the zinc diffusion region is subjected to light incidence I2The E APD structure is shown in fig. 3.
Referring to fig. 4, an embodiment of the present application provides a method for manufacturing an avalanche photodiode APD, including the steps of:
s1: manufacturing an epitaxial structure of a planar APD, wherein the epitaxial structure comprises a multiplication layer 2, the multiplication layer 2 comprises at least one group of multiplication units 20, the multiplication units 20 sequentially comprise a carrier acceleration region 21 and an impact ionization region 22 from top to bottom, the carrier acceleration region 21 is made of intrinsic InAlAs materials, and the impact ionization region 22 is made of intrinsic InP materials;
s2: and performing zinc diffusion on the epitaxial structure of the planar APD, and manufacturing an electrode to form an APD structure.
Further, in the embodiment of the present application, the specific steps of fabricating the epitaxial structure of the planar APD include:
a substrate 7, a buffer layer 6, an absorption layer 5, a transition layer 4, a charge layer 3, a multiplication layer 2 and a contact layer 1 are sequentially manufactured from bottom to top.
In the embodiment of the present application, taking four sets of the multiplication units 20 as an example, the avalanche photodiode APD manufactured by the method for manufacturing the avalanche photodiode APD is subjected to a performance simulation test, which includes a hole impact ionization coefficient, an electron impact ionization coefficient, an electric field distribution, and the like.
Referring to the simulation result diagram of the electric field distribution of the APD shown in fig. 5, the abscissa corresponds to the contact layer 1, the multiplication layer 2, the charge layer 3, the transition layer 4, the absorption layer 5, the buffer layer 6 and the substrate 7 from left to right in sequence, the multiplication layer 2 has four sets of multiplication units 20, and each multiplication unit comprises a carrier acceleration region 21 and a collision ionization region 22 from left to right in sequence. As can be seen from fig. 5, the entire multiplication layer 2 is in a high electric field region.
Referring to the simulation result diagram of the impact ionization coefficient of holes in fig. 6 and the simulation result diagram of the impact ionization coefficient of electrons in fig. 7, the abscissa of fig. 6 and 7 corresponds to the contact layer 1, the multiplication layer 2, the charge layer 3, the transition layer 4 and the absorption layer 5 from left to right, the multiplication layer 2 has four sets of multiplication units 20, and each multiplication unit comprises a carrier acceleration region 21 and an impact ionization region 22 from left to right.
In fig. 6 and 7, line 1 represents the Doping concentration profile (Absolute Net Doping), line 2 represents the impact ionization coefficient of holes, and line 3 represents the impact ionization coefficient of electrons, and since two different materials are used as multiplication layers, the hole ionization coefficient is higher in InP and lower in InAlAs, and thus a periodic variation occurs in the case where two materials alternate within the multiplication layers. When a photon-generated carrier of the absorption layer 5 enters the multiplication layer 2 after being accelerated by an electric field, firstly, the collision ionization occurs in the InP material of the rightmost collision ionization region 22 to generate an electron hole pair, and a hole enters the carrier acceleration region 21 leftwards, namely, the intrinsic InAlAs material.
As can be seen from fig. 5 to 7, the planar APD fabricated by using the epitaxial structure of the planar APD provided in the present application can limit the impact ionization of the holes in the impact ionization region 22, and improve the certainty of the impact ionization occurring in the multiplication layer, so that the excess noise coefficient F can be reduced, thereby making the APD have higher sensitivity and better performance.
In the description of the present application, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It is noted that, in the present application, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An epitaxial structure for a planar APD, comprising a multiplication layer (2), characterized in that: the multiplication layer (2) comprises at least one group of multiplication units (20), the multiplication units (20) sequentially comprise a carrier acceleration region (21) and a collision ionization region (22) from top to bottom, the carrier acceleration region (21) is made of intrinsic InAlAs materials, and the collision ionization region (22) is made of intrinsic InP materials.
2. The epitaxial structure for a planar APD of claim 1 wherein: the multiplication layer (2) comprises a plurality of groups of multiplication units (20), and all the multiplication units (20) are sequentially stacked.
3. The epitaxial structure for a planar APD of claim 2 wherein: the number of the multiplication units (20) is 1-5.
4. The epitaxial structure for a planar APD according to claim 1, comprising, in order from top to bottom, a contact layer (1), a multiplication layer (2), a charge layer (3), a transition layer (4), an absorption layer (5), a buffer layer (6), a substrate (7).
5. The epitaxial structure for planar APDs according to claim 4, wherein the contact layer (1) is intrinsic InP material, the charge layer (3) is N-type InP material, the transition layer (4) is intrinsic InGaAsP material, the absorption layer (5) is intrinsic InGaAs material, the buffer layer (6) is N-type InP material and the substrate (7) is N-type InP material.
6. The epitaxial structure of a planar APD according to claim 4, wherein the contact layer (1) has a thickness of 2-3 μm, the charge layer (3) has a thickness of 0.1-0.3 μm, the transition layer (4) has a thickness of 60-120 nm, the absorption layer (5) has a thickness of 1-3 μm, and the buffer layer (6) has a thickness of 0.5-1 μm.
7. The epitaxial structure for a planar APD according to claim 2 wherein the multiplication layer (2) comprises four sets of multiplication cells (20), the four sets of carrier acceleration regions (21) and impact ionization regions (22) each having a thickness of 50 nm.
8. An APD, wherein the avalanche photodiode APD is fabricated from an epitaxial structure of the planar APD as claimed in any one of claims 1 to 7 by a zinc diffusion process.
9. A method of fabricating an APD as claimed in claim 8 comprising the steps of:
manufacturing an epitaxial structure of a planar APD, wherein the epitaxial structure comprises a multiplication layer (2), the multiplication layer (2) comprises at least one group of multiplication units (20), the multiplication units (20) sequentially comprise a carrier acceleration region (21) and an impact ionization region (22) from top to bottom, the carrier acceleration region (21) is made of intrinsic InAlAs materials, and the impact ionization region (22) is made of intrinsic InP materials;
and performing zinc diffusion on the epitaxial structure of the planar APD, and manufacturing an electrode to form an APD structure.
10. The method of fabricating the APD of claim 9, wherein the step of fabricating the epitaxial structure of the planar APD comprises:
a substrate (7), a buffer layer (6), an absorption layer (5), a transition layer (4), a charge layer (3), a multiplication layer (2) and a contact layer (1) are sequentially manufactured from bottom to top.
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| US20020003240A1 (en) * | 2000-03-16 | 2002-01-10 | Asamira Suzuki | Avalanche photodiode |
| CN103022218A (en) * | 2012-12-26 | 2013-04-03 | 华中科技大学 | InAs avalanche photodiode and method for manufacturing same |
| CN107768462A (en) * | 2017-11-02 | 2018-03-06 | 天津大学 | Two-stage table top indium gallium arsenic/indium phosphorus avalanche photodide and preparation method thereof |
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