CN112397437A - Chuck and method for bearing wafer - Google Patents
Chuck and method for bearing wafer Download PDFInfo
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- CN112397437A CN112397437A CN201910757532.2A CN201910757532A CN112397437A CN 112397437 A CN112397437 A CN 112397437A CN 201910757532 A CN201910757532 A CN 201910757532A CN 112397437 A CN112397437 A CN 112397437A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a chuck and a method for bearing a wafer, wherein the chuck comprises: the wafer carrying platform is used for horizontally placing a wafer and comprises at least two sub-carrying platforms, and all the sub-carrying platforms bear the same wafer; and the number of the drivers is consistent with that of the sub-carrier tables, and each driver is correspondingly connected to one sub-carrier table and used for respectively driving the sub-carrier tables to move in the vertical direction so as to enable the wafer to be kept in a horizontal state. In the chuck and the method for bearing the wafer, each sub-carrier can be driven respectively, so that the joint degree of the wafer placed on the wafer carrier and each area of the wafer carrier is controllable. In the using process, a user can attach the wafer placed on the wafer carrying table to a specific area of the wafer carrying table according to needs so as to adapt to different using requirements. Under the condition that the surface level of the wafer needs to be ensured, the surface level of the wafer can be ensured by controlling the lifting of the sub-carrier.
Description
Technical Field
The invention relates to the field of wafer processing equipment, in particular to a chuck and a method for bearing a wafer.
Background
In the prior art, a chuck is often used to carry the wafer. When a chuck is used, a wafer is typically placed on the top surface of a wafer carrier of the chuck. In the prior art, the problem that the surface of a wafer is not horizontal often occurs on the wafer placed on the upper surface of a wafer carrier, and when the wafer is processed under the condition, some problems such as defocusing occurs during exposure easily occur. This will seriously affect the subsequent processing of the wafer, resulting in a reduction in the yield of wafer production.
Disclosure of Invention
The invention aims to provide a chuck and a method for bearing a wafer, which can improve the yield of wafer production.
In order to solve the above technical problem, there is provided a chuck including: the wafer carrying platform is used for horizontally placing a wafer and comprises at least two sub-carrying platforms, and all the sub-carrying platforms bear the same wafer; and the number of the drivers is consistent with that of the sub-carrier tables, and each driver is correspondingly connected to one sub-carrier table and used for respectively driving the sub-carrier tables to move in the vertical direction so as to enable the wafer to be kept in a horizontal state.
Optionally, the method further includes: and the controller is connected to the driver and is used for controlling the driver to drive the sub-carrier.
Optionally, the method further includes: and the leveling sensor is connected to the controller and used for detecting the leveling condition of the wafer and providing the leveling condition of the wafer for the controller.
Optionally, the method further includes: and the adsorption unit is arranged on the sub-carrier, is connected to the controller and is used for providing an adsorption force for the wafer according to the control of the controller.
Optionally, each adsorption unit is connected to the controller, and the controller controls each adsorption unit.
Optionally, the number of the adsorption units is the same as that of the sub-carriers, and each adsorption unit is correspondingly arranged on one sub-carrier.
Optionally, the sub-carrier has an initial position state, and after the wafer is loaded, the sub-carrier returns to the initial position state.
In order to solve the above technical problem, the following provides a method for carrying a wafer, including the following steps: providing a chuck, wherein the chuck comprises a wafer carrying platform, the wafer carrying platform is used for horizontally placing a wafer and comprises at least two sub carrying platforms, and all the sub carrying platforms bear the same wafer; placing a wafer on the upper surface of the wafer carrying platform; and changing the vertical height of each sub-carrier to enable the surface of the wafer to be adjusted to be in a horizontal state.
Optionally, when the vertical height of each sub-carrier is changed to adjust the surface of the wafer to be horizontal, the method includes the following steps: and acquiring the leveling condition of the wafer so as to acquire the warping condition of each area on the surface of the wafer, and controlling the sub-carrier platform corresponding to the area to move upwards or downwards in the area where the wafer warps, so that the surface of the wafer is adjusted to be in a horizontal state.
Optionally, the method further comprises the following steps: and providing an adsorption force for the wafer to enable the wafer to be attached to the upper surface of the sub-carrier.
The sub-stages of the chuck and the method for bearing the wafer can be driven respectively, so that the joint degree of the wafer placed on the wafer stage and each area of the wafer stage is controllable. In the using process, a user can attach the wafer placed on the wafer carrying table to a specific area of the wafer carrying table according to needs so as to adapt to different using requirements. Under the condition that the surface level of the wafer needs to be ensured, the surface level of the wafer can be ensured by controlling the lifting of the sub-carrier, and the yield of wafer production is improved.
Drawings
Fig. 1 is a schematic structural diagram of a chuck according to the present invention.
Fig. 2 is a schematic top view of a wafer stage according to the present invention.
Fig. 3 is a schematic view showing the connection relationship of the components of the chuck according to an embodiment of the present invention.
Fig. 4a is a schematic diagram illustrating a hot spot or a chuck spot occurring on a wafer carrier according to an embodiment of the present invention.
Fig. 4b is a schematic diagram illustrating adjustment of the level of the sub-stage when a hot spot or a chuck spot occurs on the wafer stage according to an embodiment of the present invention.
FIG. 5a is a schematic diagram illustrating a cold spot on a wafer stage and wear on a middle region of the wafer stage in accordance with one embodiment of the present invention.
Fig. 5b is a schematic diagram illustrating adjustment of the level of the sub-stage when the wafer stage has a cold spot and the middle area of the wafer stage is worn according to an embodiment of the present invention.
FIG. 6a is a schematic view of a wafer carrier having a cold spot and an edge region of the wafer carrier being worn away in accordance with one embodiment of the present invention.
Fig. 6b is a schematic diagram illustrating the adjustment of the level of the sub-stage when the wafer stage has a cold spot and the edge area of the wafer stage is worn according to an embodiment of the present invention.
FIG. 7 is a flowchart illustrating a method of loading a wafer according to one embodiment of the present invention.
Detailed Description
The chuck and the method for supporting a wafer according to the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
It has been found that when a wafer is placed, the surface of the wafer may be not level due to particles between the wafer and the wafer stage, and may also be not level due to wear occurring on the surface of the wafer stage.
Referring to fig. 1 to 4, fig. 1 is a schematic structural diagram of a chuck according to the present invention, fig. 2 is a schematic top view of a wafer carrier according to the present invention, fig. 3 is a schematic connection relationship between components of the chuck according to an embodiment of the present invention, fig. 4a is a schematic diagram of the wafer carrier when a hot spot or a chuck spot occurs on the wafer carrier according to an embodiment of the present invention, and fig. 4b is a schematic diagram of the wafer carrier when a hot spot or a chuck spot occurs on the wafer carrier according to an embodiment of the present invention after a horizontal height of the sub-carrier is adjusted.
In this particular embodiment, a chuck 100 is provided, comprising: the wafer stage 101 is used for horizontally placing a wafer 501, and comprises at least two sub-stages 201, and all the sub-stages 201 bear the same wafer 501; the number of the drivers 301 is the same as that of the sub-stages 201, and each driver 301 is correspondingly connected to one sub-stage 201 and is used for respectively driving the sub-stages 201 to move in the vertical direction so as to enable the wafer 501 to be kept in a horizontal state.
Since the sub-stages 201 of the wafer stage 101 can be driven individually, the degree of adhesion between the wafer 501 placed on the wafer stage 101 and each region of the wafer stage 101 can be controlled. In the using process, a user can attach the wafer 501 placed on the wafer carrier 101 to a specific area of the wafer carrier 101 according to needs, so as to adapt to different using requirements. Under the situation that the surface level of the wafer 501 needs to be ensured, the surface of the wafer 501 can be ensured to be in a horizontal state by controlling the lifting of the sub-carrier 201, and the yield of the wafer 501 production is improved.
In one embodiment, the number of the sub-stages 201 is three or more, and the control of the bonding degree between the wafer stage 101 and the wafer 501 is more detailed as the number of the sub-stages 201 is larger. When three or more sub-stages 201 are provided, three sub-stages 201 can be used as a buffer for placing the wafer 501. This is because the chuck 100 is not a flat surface plate, and the surface of the wafer stage 101 on which the wafer 501 is placed has many vertical and horizontal gaps, and therefore, a certain buffer measure is required to smoothly place the wafer 501 on the surface of the wafer stage 101.
When the three sub-stages 201 are used as buffers for placing the wafer 501, the wafer 501 can be horizontally placed on the wafer placing surface formed by the upper surfaces of the three sub-stages 201, and then the wafer 501 can be horizontally placed on the wafer placing surface of the wafer stage 101, so that the wafer 501 cannot be clamped by the horizontal and vertical gaps on the surface of the chuck 100 and collided.
Specifically, the three sub-stages 201 which are not on the same straight line are controlled to be lifted, and the upper surfaces of the three lifted sub-stages 201 are on the same horizontal plane. After the three sub-stages 201 are lifted up, the wafer 501 is placed on the upper surfaces of the three sub-stages 201, the three sub-stages 201 support the wafer 501, and then the three sub-stages 201 are controlled to retract to the original height, so that the wafer 501 is placed and buffered.
In practice, the number of the sub-stages 201 may be set as needed. In one embodiment, the number of the sub-stages 201 is at least 100. In a more preferred embodiment, 100 to 1000 sub-stages 201 are preferably provided. In this embodiment, the wafer stage 101 having a circular upper surface is configured by the upper surfaces of all the sub-stages 201 to hold the wafer 501. The size of the upper surface of the wafer carrying table 101 is matched with the size of the wafer 501, and is larger than or equal to the size of the wafer 501, so that the wafer 501 can be stably placed on the upper surface of the wafer carrying table 101.
In one embodiment, the shape of the sub-stage 201 may be square, circular, triangular, or the like. Actually, the shape of the sub-stage 201 may be set as necessary.
In one embodiment, the wafer stage 101 further includes: and a controller 302 connected to the driver 301, for controlling the driver 301 to drive the sub-stage 201. In one embodiment, the controller 302 includes at least one of an editable logic device, a microcontroller, and a single-chip microcomputer. In practice, the specific structure of the controller 302 may be set as desired.
In one embodiment, the controller 302 issues control commands to each driver 301 to control the driving of each sub-stage 201 by each driver 301, so as to control the sub-stages 201 corresponding to different areas of the wafer stage 101 to adhere to the wafer 501 according to the requirement.
In one embodiment, the driver 301 includes a drive motor 403 and a drive shaft 404. One end of the driving shaft 404 is connected to the sub-stage 201, and the other end is connected to the driving motor 403, and the driving shaft extends and contracts under the driving of the driving motor 403, thereby controlling the lifting and lowering of the sub-stage 201.
In one embodiment, the wafer stage 101 further includes: and a leveling sensor 303 connected to the controller 302, for detecting a leveling condition of the wafer 501 placed on the wafer stage 101, and providing the leveling condition of the wafer 501 to the controller 302. In one embodiment, the leveling sensor 303 is an optical leveling sensor 303, and detects the leveling condition of the wafer 501 through outgoing and incoming light rays.
In this embodiment, after the leveling condition obtained by the leveling sensor 303 is provided to the controller 302, the controller 302 may control the specific lifting/lowering condition of each sub-stage 201 according to the leveling condition of the wafer 501, so as to adapt to different use conditions.
In one embodiment, when the wafer stage 101 is applied to an exposure machine, the surface of the wafer 501 can be kept horizontal by the expansion and contraction of each sub-stage 201, so as to reduce the possibility of defocusing the wafer 501 and prevent the subsequent problems of uneven critical dimensions and accuracy of layer alignment. Specifically, when the exposure machine performs exposure imaging on the wafer 501 placed on the wafer stage 101, the focus needs to be adjusted to focus. If the surfaces of the wafer 501 placed on the wafer stage 101 are not on the same horizontal plane, the exposure focus is not on the wafer 501, and the wafer is out of focus. When out of focus, the exposure energy distribution and the imaging contrast may change, which may affect subsequent processing of the wafer 501. In the case of severe defocus, the exposure tool cannot even perform exposure imaging on the wafer 501, which may seriously affect the uniformity of the critical dimension of the wafer 501 and the alignment accuracy of the image layer.
Referring to fig. 4, 5 and 6, fig. 5a is a schematic diagram illustrating a case where a cold spot occurs on wafer stage 101 and a middle area of wafer stage 101 is worn according to an embodiment of the present invention, fig. 5b is a schematic diagram illustrating a case where a cold spot occurs on wafer stage 101 and a middle area of wafer stage 101 is worn according to an embodiment of the present invention after a horizontal height of sub-stage 201 is adjusted, fig. 6a is a schematic diagram illustrating a case where a cold spot occurs on wafer stage 101 and an edge area of wafer stage 101 is worn according to an embodiment of the present invention, and fig. 6b is a schematic diagram illustrating a case where a cold spot occurs on wafer stage 101 and a horizontal height of sub-stage 201 is adjusted when an edge area of wafer stage 101 is worn according to an embodiment of the present invention.
The reasons for the defocusing of the wafer 501 mainly include the following three reasons: (1) hot spots, namely, particles 503 are adhered to the back of the wafer 501, and after the wafer 501 is placed on the upper surface of the wafer carrier 101, the wafer 501 is jacked up by the particles 503 on the back surface, so that the wafer 501 is locally convex; (2) the method comprises the following steps of (1) performing chuck counting, namely adhering particles 503 on the upper surface of the wafer carrying platform 101, and jacking the wafer 501 placed at the position by the particles 503 to cause local protrusion of the wafer 501; (3) the cold spot, that is, the wafer stage 101 is worn, the surface of the wafer stage 101 is uneven, and the edge of the wafer 501 placed on the wafer stage 101 is raised or the center is raised.
In this embodiment, the leveling sensor 303 is used to detect the leveling condition of the wafer 501, so as to adjust the height of each sub-stage 201, thereby avoiding the out-of-focus in the exposure process caused by the leveling problem of the wafer 501. Specifically, the Leveling sensor 303 is used to level the wafer 501 placed on the wafer stage 101, and a Leveling map (Leveling map) is obtained. The leveling map shows the topography of the wafer 501, and the controller 302 can control the heights of the sub-stages 201 of the wafer stage 101 by determining the leveling map. When the leveling sensor 303 is used to level the wafer 501, the leveling sensor 303 can also detect the existence of a hot spot, a chuck spot, or a cold spot, so that when the controller 302 controls the lifting/lowering of the sub-stage 201 according to the leveling condition of the wafer 501, specific adjustment can be performed according to the specific condition of the hot spot, the chuck spot, or the cold spot, so as to obtain a better adjustment effect.
Specifically, when a hot spot and a chuck spot occur, the controller 302 controls the sub-carrier 201 corresponding to the position of the particulate matter 503 to retract, so that the horizontal position of the particulate matter 503 is lowered, the wafer 501 is not jacked up to be locally raised by the particulate matter 503 any more, the leveling problem of the wafer 501 caused by the hot spot or the chuck spot is greatly reduced, and the probability of the exposure defocus phenomenon is greatly reduced.
When a cold spot occurs, the controller 302 controls the sub-stage 201 corresponding to the position where the wafer stage 101 is worn to rise, or controls the sub-stage 201 corresponding to the position where the wafer stage 101 is not worn to fall, so that the upper surface of the sub-stage 201 corresponding to the position where the wafer stage 101 is not worn is as high as the upper surface of the sub-stage 201 corresponding to the position where the wafer stage 101 is worn, and the surface of the wafer 501 placed on the upper surface of the wafer stage 101 is leveled, thereby reducing the problem of flatness of the wafer 501 caused by the cold spot, and greatly reducing the probability of occurrence of the exposure defocus phenomenon.
In this embodiment, the focus control of the wafer 501 by the wafer stage 101 is more accurate as the number of the sub-stages 201 is larger. In fact, when the number of sub-stages 201 is set in the wafer stage 101 requiring focusing, the requirement of the exposure machine for focusing control needs to be considered, and for example, the requirement of the Immersion exposure machine (Immersion scanner) for focusing is more strict than that of ArF Dry, KrF, and i-Line machines, and the number of sub-stages 201 of the wafer stage 101 applied to the Immersion exposure machine needs to be relatively larger.
In addition, when the number of sub-stages 201 is set, other requirements of the exposure tool need to be considered. For example, the immersion exposure tool requires that the height dimension of the particles 503 is within 70nm, that is, the wafer 501 has fluctuation within 70nm under the influence of the particles 503, so as to obtain good uniformity. Therefore, the leveling of wafer 501 by wafer stage 101 should be such that the waviness of wafer 501 due to particulate matter 503 is within 70 nm. Since the tools such as ArF Dry, KrF, and i-Line are required to be within 200nm, the number of sub-stages 201 required when the chuck 100 is applied to the tools such as ArF Dry, KrF, and i-Line is less.
In one embodiment, the wafer stage 101 further includes: the suction unit 304 is disposed on the sub-stage 201, connected to the controller 302, and configured to provide a suction force to the wafer 501 according to the control of the controller 302. The number of the suction units 304 is the same as that of the sub-carriers 201, and each suction unit 304 is correspondingly disposed on one sub-carrier 201.
In one embodiment, the adsorption unit 304 includes a suction pump coupled to the controller 302. The air pump is disposed toward the upper surface of the sub-stage 201, and is configured to provide an adsorption force to the wafer 501 placed on the upper surface of the sub-stage 201, so as to fix a relative position between the wafer 501 and the wafer stage 101.
By providing a suction unit 304 for each sub-carrier 201, each sub-carrier 201 can provide a suction force to the wafer 501. When three of the sub-stages 201 are used as the lifting axis, the suction force provided by the suction unit 304 can also be used to prevent the wafer 501 from slipping off the three sub-stages 201.
In one embodiment, each adsorption unit 304 is connected to the controller 302, and the controller 302 controls each adsorption unit 304. In fact, it may be set that the suction units 304 are controlled by the controller 302 together, the wafers 501 are sucked together, or the suction force applied to the wafers 501 is stopped together, and the suction force applied to the wafers by the suction units 304 is the same. In this way, the requirement on the computing capacity of the controller 302 is reduced, and since the adsorption capacities of the adsorption units 304 provided for the wafers 501 are the same, the possibility that the wafers 501 are deformed due to the different adsorption capacities of the adsorption units 304 when the adsorption units 304 have different adsorption capacities for the wafers 501 is avoided.
It should be noted that, in the process of moving the sub-stage 201 up and down and adjusting the surface of the wafer 501 to a horizontal state, the adsorption unit 304 arranged on the sub-stage 201 moving up and down stops adsorbing, so as to prevent the wafer 501 from tilting due to the adsorption action of the adsorption unit 304 in the process of adjusting the height of the sub-stage 201, which causes the wafer 501 to be broken and affects the production and processing yield of the wafer 501.
In one specific embodiment, when the suction unit 304 provided on the sub-stage 201 that moves up and down stops sucking, the suction unit 304 provided on the other sub-stage 201 also stops sucking. This can prevent the wafer 501 from being sucked by the suction unit 304 provided on the other sub-stage 201 and tilted when the wafer is adjusted to the horizontal state.
In one embodiment, the sub-stage 201 has an initial position, and after the wafer 501 is loaded, the sub-stage 201 returns to the initial position. In this way, all the sub-stages 201 are at the same level every time the wafer stage carries the wafer 501, which is beneficial to reducing the calculation amount required by the controller 302 when calculating the up-and-down height of the sub-stages 201, and making the whole chuck easier to control.
Referring to fig. 7, a method for loading a wafer 501 on a wafer processing machine according to an embodiment of the invention is shown. In this embodiment, a method for supporting a wafer 501 on a wafer processing machine is also provided, which includes the following steps: s71 provides a chuck 100, where the chuck 100 includes a wafer stage 101, the wafer stage 101 is used for horizontally placing a wafer 501, and includes at least two sub-stages 201, and all the sub-stages 201 carry the same wafer 501; s72 placing the wafer 501 on the upper surface of the wafer stage 101; s73 changes the vertical height of each sub-stage 201, so that the surface of the wafer 501 is adjusted to be horizontal.
Since the sub-stages 201 of the wafer stage 101 can be driven individually, the degree of adhesion between the wafer 501 placed on the wafer stage 101 and each region of the wafer stage 101 can be controlled. In the using process, a user can attach the wafer 501 placed on the wafer carrier 101 to a specific area of the wafer carrier 101 according to needs, so as to adapt to different using requirements. Under the situation that the surface level of the wafer 501 needs to be ensured, the surface level of the wafer 501 can be ensured by controlling the lifting of the sub-carrier 201, and the yield of the wafer 501 production is improved.
In one embodiment, the number of the sub-stages 201 is three or more, and the control of the bonding degree between the wafer stage 101 and the wafer 501 is more detailed as the number of the sub-stages 201 is larger. When three or more sub-stages 201 are provided, three wafer stages 101 can be used as buffers for placing the wafer 501. This is because the chuck 100 is not a flat surface, and the surface of the wafer stage 101 on which the wafer 501 is placed has many vertical and horizontal gaps, so that a certain buffering measure is required to stably place the wafer 501 on the surface of the wafer stage 101.
In practice, the number of the sub-stages 201 may be set as needed. In one embodiment, 100 to 1000 sub-stages 201 are preferably provided. In this embodiment, the size of the upper surface of the wafer stage 101, which is formed by the upper surfaces of all the sub-stages 201, matches the size of the wafer 501, and is greater than or equal to the size of the wafer 501, so that the wafer 501 can be stably placed on the upper surface of the wafer stage 101.
In one embodiment, the shape of the sub-stage 201 may be square, circular, triangular, or the like. In some embodiments, the shape of the sub-stage 201 may be set as needed.
In one embodiment, when the vertical height of each sub-stage 201 is changed to adjust the surface of the wafer 501 to be horizontal, the method includes the following steps: the leveling condition of the wafer 501 is acquired, so that the warping condition of each area of the surface of the wafer 501 is acquired, and the sub-stage 201 corresponding to the area where the wafer 501 warps is controlled to move up or down, so that the surface of the wafer 501 is adjusted to be horizontal.
In one embodiment, the leveling condition includes a leveling map of the wafer 501 acquired by the leveling sensor 303. In one embodiment, the leveling sensor 303 is an optical leveling sensor 303, and detects the leveling condition of the wafer 501 through outgoing and incoming light rays.
In one embodiment, the wafer processing tool is an exposure tool. When the wafer 501 is carried, the possibility of defocusing of the wafer 501 can be reduced by the expansion and contraction of each sub-stage 201, and the problems of non-uniform critical dimension and layer alignment control, which may be caused subsequently, can be prevented. Specifically, when the exposure machine performs exposure imaging on the wafer 501 placed on the wafer stage 101, the focus needs to be adjusted to focus. If the surface of the wafer 501 placed on the wafer stage 101 has a leveling problem and the surface of the wafer 501 is not on the same horizontal plane, the focus of exposure is not on the wafer 501, and exposure is out of focus. When out of focus, the exposure energy distribution and the imaging contrast may change, which may affect subsequent processing of the wafer 501. In the case of severe defocus, the exposure tool cannot even perform exposure imaging on the wafer 501, which may seriously affect the uniformity of the critical dimension of the wafer 501 and the alignment accuracy of the image layer.
The reasons for the defocusing of the wafer 501 mainly include the following three reasons: (1) hot spots, namely, particles 503 are adhered to the back of the wafer 501, and after the wafer 501 is placed on the upper surface of the wafer carrier 101, the wafer 501 is jacked up by the particles 503 on the back surface, so that the wafer 501 is locally convex; (2) the method comprises the following steps of (1) performing chuck counting, namely adhering particles 503 on the upper surface of the wafer carrying platform 101, and jacking the wafer 501 placed at the position by the particles 503 to cause local protrusion of the wafer 501; (3) the cold spot, that is, the wafer stage 101 is worn, the surface of the wafer stage 101 is uneven, and the edge of the wafer 501 placed on the wafer stage 101 is raised or the center is raised. In this embodiment, the leveling sensor 303 is used to detect the leveling condition of the wafer 501, so as to adjust the height of each sub-stage 201, thereby avoiding the out-of-focus in the exposure process caused by the leveling problem of the wafer 501. Specifically, the Leveling sensor 303 is used to level the wafer 501 placed on the wafer stage 101, and a Leveling map (Leveling map) is obtained. The leveling map shows the appearance of the wafer 501, and when the controller 302 determines the leveling map to control the height of each sub-stage 201 of the wafer stage 101 and level the wafer 501 with the leveling sensor 303, the leveling sensor 303 can also detect the existence of a hot spot, a chuck spot, or a cold spot, so that when the controller 302 controls the lifting and lowering of the sub-stage 201 according to the leveling condition of the wafer 501, specific adjustment can be performed according to the specific condition of the hot spot, the chuck spot, or the cold spot, so as to obtain a better adjustment effect.
Specifically, when a hot spot and a chuck spot occur, the controller 302 controls the sub-carrier 201 corresponding to the position of the particulate matter 503 to retract, so that the horizontal position of the particulate matter 503 is lowered, the wafer 501 is not jacked up to be locally raised by the particulate matter 503 any more, the leveling problem of the wafer 501 caused by the hot spot or the chuck spot is greatly reduced, and the probability of the exposure defocus phenomenon is greatly reduced.
When a cold spot occurs, the controller 302 controls the sub-stage 201 corresponding to the position where the wafer stage 101 is worn to rise, or controls the sub-stage 201 corresponding to the position where the wafer stage 101 is not worn to fall, so that the upper surface of the sub-stage 201 corresponding to the position where the wafer stage 101 is not worn is as high as the upper surface of the sub-stage 201 corresponding to the position where the wafer stage 101 is worn, and the surface of the wafer 501 placed on the upper surface of the wafer stage 101 is leveled, thereby reducing the problem of flatness of the wafer 501 caused by the cold spot, and greatly reducing the probability of occurrence of the exposure defocus phenomenon.
In one embodiment, the method further comprises the following steps: providing a suction force to the wafer 501, so that the wafer 501 is attached to the upper surface of the sub-carrier 201.
In this embodiment, a suction unit 304 is provided on the sub-stage 201, and the suction unit 304 provides suction force to the wafer 501.
It should be noted that, in the process of moving the sub-stage 201 up and down and adjusting the surface of the wafer 501 to a horizontal state, the adsorption unit 304 arranged on the sub-stage 201 moving up and down stops adsorbing, so as to prevent the wafer 501 from tilting due to the adsorption action of the adsorption unit 304 in the process of adjusting the height of the sub-stage 201, which causes the wafer 501 to be broken and affects the production and processing yield of the wafer 501.
In one specific embodiment, when the suction unit 304 provided on the sub-stage 201 that moves up and down stops sucking, the suction unit 304 provided on the other sub-stage 201 also stops sucking. This can prevent the wafer 501 from being sucked by the suction unit 304 provided on the other sub-stage 201 and tilted when the wafer is adjusted to the horizontal state.
In one embodiment, the method further comprises the following steps: after the wafer placed on the surface of the wafer carrier is taken away, the sub-carrier is controlled to return to the initial position, and specifically, after the processing of the wafer of the current batch is completed, the sub-carrier 201 which moves up and down is controlled to return to the initial position. In a preferred embodiment, all of the sub-stages 201 are reset after the operation on the wafers of the current lot is completed.
This is because, during the use process, the sub-stages 201 may be driven to change the vertical height of the wafer 501, and at this time, resetting all the sub-stages 201 once makes the control of the sub-stages 201 simpler when processing the next batch of wafers, and a large amount of control operations are not required due to different vertical heights of the sub-stages 201, thereby saving the control cost.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A chuck, comprising:
the wafer carrying platform is used for horizontally placing a wafer and comprises at least two sub-carrying platforms, and all the sub-carrying platforms bear the same wafer;
and the number of the drivers is consistent with that of the sub-carrier tables, and each driver is correspondingly connected to one sub-carrier table and used for respectively driving the sub-carrier tables to move in the vertical direction so as to enable the wafer to be kept in a horizontal state.
2. The chuck according to claim 1, further comprising:
and the controller is connected to the driver and is used for controlling the driver to drive the sub-carrier.
3. The chuck according to claim 2, further comprising:
and the leveling sensor is connected to the controller and used for detecting the leveling condition of the wafer and providing the leveling condition of the wafer for the controller.
4. The chuck according to claim 2, further comprising:
and the adsorption unit is arranged on the sub-carrier, is connected to the controller and is used for providing an adsorption force for the wafer according to the control of the controller.
5. The chuck of claim 4, wherein the number of the suction units is the same as the number of the sub-carriers, and each suction unit is correspondingly arranged to one sub-carrier.
6. The chuck according to claim 4, wherein each of the suction units is connected to the controller, and the controller controls the respective suction units.
7. The chuck of claim 1, wherein the number of said sub-stages is at least 100.
8. A method for carrying a wafer, comprising:
providing a chuck, wherein the chuck comprises a wafer carrying platform, the wafer carrying platform is used for horizontally placing a wafer and comprises at least two sub carrying platforms, and all the sub carrying platforms bear the same wafer;
placing a wafer on the upper surface of the wafer carrying platform;
and changing the vertical height of each sub-carrier to enable the surface of the wafer to be adjusted to be in a horizontal state.
9. The method as claimed in claim 8, wherein the step of changing the vertical height of each sub-stage to adjust the surface of the wafer to be horizontal comprises the steps of:
and acquiring the leveling condition of the wafer so as to acquire the warping condition of each area on the surface of the wafer, and controlling the sub-carrier platform corresponding to the area to move upwards or downwards in the area where the wafer warps, so that the surface of the wafer is adjusted to be in a horizontal state.
10. The method of claim 8, further comprising the steps of:
and providing an adsorption force for the wafer to enable the wafer to be attached to the upper surface of the sub-carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910757532.2A CN112397437A (en) | 2019-08-16 | 2019-08-16 | Chuck and method for bearing wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910757532.2A CN112397437A (en) | 2019-08-16 | 2019-08-16 | Chuck and method for bearing wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112397437A true CN112397437A (en) | 2021-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910757532.2A Pending CN112397437A (en) | 2019-08-16 | 2019-08-16 | Chuck and method for bearing wafer |
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| CN (1) | CN112397437A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257721A (en) * | 2021-06-28 | 2021-08-13 | 苏州赛腾精密电子股份有限公司 | Wafer warpage adjusting device and warpage preventing method |
| WO2023272898A1 (en) * | 2021-06-28 | 2023-01-05 | 苏州赛腾精密电子股份有限公司 | Chip-scale wafer level marking system and laser marking method |
-
2019
- 2019-08-16 CN CN201910757532.2A patent/CN112397437A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257721A (en) * | 2021-06-28 | 2021-08-13 | 苏州赛腾精密电子股份有限公司 | Wafer warpage adjusting device and warpage preventing method |
| WO2023272898A1 (en) * | 2021-06-28 | 2023-01-05 | 苏州赛腾精密电子股份有限公司 | Chip-scale wafer level marking system and laser marking method |
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