CN112397376B - Wafer bonding method and wafer bonding system - Google Patents
Wafer bonding method and wafer bonding system Download PDFInfo
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- CN112397376B CN112397376B CN202011272848.1A CN202011272848A CN112397376B CN 112397376 B CN112397376 B CN 112397376B CN 202011272848 A CN202011272848 A CN 202011272848A CN 112397376 B CN112397376 B CN 112397376B
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- 238000000034 method Methods 0.000 title claims abstract description 88
- 235000012431 wafers Nutrition 0.000 claims abstract description 339
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- 230000002159 abnormal effect Effects 0.000 claims description 38
- 239000013072 incoming material Substances 0.000 claims description 18
- 238000012216 screening Methods 0.000 claims description 10
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- 238000007493 shaping process Methods 0.000 claims 1
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- 238000007664 blowing Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention provides a wafer bonding method and a wafer bonding system, wherein a first wafer is deformed according to a preset variable before bonding, and theoretical deformation corresponding to a second wafer is obtained by calculating according to the preset variable, the first deformation of the first wafer and the second deformation of the second wafer. Therefore, the magnitude of the acting force applied to each second wafer can be adjusted according to the theoretical deformation amount, so that the deformation amount of the bonded wafers is reduced, and the problem of lower wafer bonding yield is solved.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a wafer bonding method and a wafer bonding system.
Background
The semiconductor bonding technology is a technology of directly bonding two homogeneous or heterogeneous semiconductor materials under a certain condition after surface cleaning and activating treatment, and bonding wafers into a whole through Van der Waals force, molecular force and even atomic force. In the conventional semiconductor technology, in order to increase the yield of wafers, a wafer-to-wafer bonding process has become a central focus. In the bonding technology of wafers, the deformation amount after wafer bonding is an important parameter for representing the quality of the wafer bonding process; if the deformation amount in the wafer bonding process is too large, the later stage of the process is seriously affected, so that the connection and the functionality of a circuit after the wafer bonding are affected, and the yield of the wafer is reduced.
In the wafer bonding process, a first force is usually applied to a first wafer to be bonded to generate a first deformation on the first wafer before the wafer is bonded, and a second force is applied to a second wafer to be bonded to generate a second deformation opposite to the first wafer in direction and the same deformation amount. In the conventional wafer bonding process, the first forces applied to the same lot of first wafers are the same, and the second forces applied to the same lot of second wafers are the same. And the deformation amount of different wafers under the same acting force cannot be the same because of the influence of factors such as thickness, deformation amount during material feeding, deformation amount during the process and the like. Thus, the wafer variation formed after bonding part of the first wafer and the second wafer is larger, and the yield of wafer bonding is reduced.
Disclosure of Invention
The invention aims to provide a wafer bonding method and a wafer bonding system, which are used for solving the problems of larger wafer variable and lower yield after bonding caused by the existing wafer bonding method.
In order to solve the above problems, the present invention provides a wafer bonding method, which includes:
acquiring a first wafer and a second wafer, and acquiring a first deformation amount corresponding to the first wafer and a second deformation amount corresponding to the second wafer;
deforming the first wafer according to a pre-shaped variable, and calculating according to the pre-shaped variable, the first deformation and the second deformation to obtain a theoretical deformation corresponding to the first deformation of the second wafer, wherein the sum of the theoretical deformation corresponding to the second wafer and the second deformation is equal to the sum of the preset deformation corresponding to the first wafer and the first deformation;
causing the second wafer to deform for the first time according to the theoretical deformation amount;
bonding the first wafer and the second wafer.
Optionally, the first deformation includes a first incoming material deformation and a first process deformation, and the second deformation includes a second incoming material deformation and a second process deformation; and calculating to obtain the theoretical deformation according to the following formula:
A1+B1+C1＝A2+B2+C2
wherein A1 represents the pre-shaped variable;
b1 represents the first incoming material deformation amount;
c1 represents the first process deformation;
a2 represents the theoretical deformation amount;
b2 represents the second incoming material deformation amount;
c2 represents the second process deformation.
Optionally, after the first deforming the second wafer, the method further includes:
a first step of: acquiring an actual deformation amount corresponding to the first deformation of the second wafer, and performing difference between the actual deformation amount and the theoretical deformation amount to obtain a first difference value;
and a second step of: judging whether the first difference value is equal to 0, and if the first difference value is not equal to 0, compensating the actual deformation of the second wafer;
repeating the first step to the second step until the difference between the actual deformation and the theoretical deformation is 0.
Optionally, the method for obtaining the first wafer and the second wafer includes:
acquiring a plurality of first initial wafers and a plurality of second initial wafers;
and respectively screening the first wafers and the second wafers which are matched with each other from the first initial wafers and the second initial wafers, wherein the first deformation corresponding to the first wafers and the difference value of the second deformation corresponding to the second wafers are in a first preset threshold range.
Optionally, before, after, or simultaneously with acquiring the plurality of first initial wafers and the plurality of second initial wafers, the method further includes: acquiring a first initial deformation amount corresponding to each first initial wafer and acquiring a second initial deformation amount corresponding to each second initial wafer; and
the method for screening the first wafer and the second wafer which are matched with each other comprises the following steps:
step one: selecting a first initial wafer from the plurality of first initial wafers as the first wafer, and taking the first initial deformation corresponding to the selected first initial wafer as the first deformation;
step two: selecting a second initial wafer from the plurality of second initial wafers, and performing difference between the second initial deformation corresponding to the selected second initial wafer and the first deformation to obtain a second difference value, wherein if the second difference value is within a first preset threshold range, the selected second initial wafer is used as the second wafer, and the second initial deformation corresponding to the selected second initial wafer is used as the second deformation;
and if the second difference value is not in the first preset threshold range, repeating the second step until the second wafer matched with the first wafer is screened out.
Optionally, the first preset threshold range is-1 ppm.
Optionally, before screening the first wafer and the second wafer that match each other, the method further includes:
and eliminating the first abnormal wafers with the first initial deformation being out of a second preset threshold range in the plurality of first initial wafers, and/or eliminating the second abnormal wafers with the second initial deformation being out of the second preset threshold range in the plurality of second initial wafers.
Optionally, after the first abnormal wafer is rejected and/or the second abnormal wafer is rejected, the method further includes:
and executing a reworking process on the first abnormal wafer and/or the second abnormal wafer, so that a first reworking deformation corresponding to the reworked first abnormal wafer is located in the second preset threshold range, and/or a second reworking deformation corresponding to the reworked second abnormal wafer is located in the second preset threshold range.
Optionally, the reworking process includes: thinning or thickening the thickness of the dielectric layer on the abnormal wafer; alternatively, holes are drilled in the abnormal wafer.
In order to solve the above problems, the present invention further provides a wafer bonding system, including:
the data acquisition module is used for acquiring and sending out a first deformation corresponding to the first wafer, a second deformation corresponding to the second wafer and a preset variable corresponding to the first wafer;
the data processing module is used for receiving the first deformation amount, the second deformation amount and the preset deformation amount sent by the data acquisition module and obtaining a theoretical deformation amount corresponding to the second wafer according to the preset deformation amount, the first deformation amount and the second deformation amount, wherein the sum of the theoretical deformation amount and the second deformation amount is equal to the sum of the preset deformation amount and the first deformation amount;
the driving module is used for driving the first wafer to deform according to the preset deformation amount and driving the second wafer to deform for the first time according to the theoretical deformation amount.
In the wafer bonding method provided by the invention, the first wafer is deformed according to the preset variable before bonding, and the theoretical variable corresponding to the second wafer is obtained by calculating according to the preset variable, the first deformation of the first wafer and the second deformation of the second wafer, so that the magnitude of acting force applied to each second wafer can be adjusted according to the theoretical variable, the deformation of the bonded wafers is reduced, and the problem of lower wafer bonding yield is solved.
Drawings
FIG. 1 is a flow chart of a wafer bonding method according to an embodiment of the invention;
FIG. 2 is a schematic diagram illustrating a wafer bonding process according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a wafer bonding system according to one embodiment of the present invention;
wherein, the reference numerals are as follows:
1-a first chuck;
2-a first wafer;
3-a second wafer;
4-a second chuck;
z1-the first force direction;
z2-the second force direction;
100-a data acquisition module;
200-a data processing module;
300-drive module.
Detailed Description
The wafer bonding method and the wafer bonding system according to the present invention are described in further detail below with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
FIG. 1 is a flow chart of a wafer bonding method according to an embodiment of the invention; fig. 2 is a schematic view of a wafer bonding process according to an embodiment of the invention. As shown in fig. 1 and 2, the wafer bonding method of the present embodiment includes the following steps S10 to S30.
In step S10, a first wafer 2 and a second wafer 3 are acquired, and a first deformation amount corresponding to the first wafer 2 is acquired, and a second deformation amount corresponding to the second wafer 3 is acquired.
In this embodiment, the first deformation amount is a deformation amount of the first wafer 2 itself. The first deformation amount includes a first incoming material deformation amount B1 corresponding to the first wafer 2 when the first wafer 2 is not subjected to any process treatment before production and manufacture, and a first process deformation amount C1 corresponding to the first wafer 2 before bonding. The second deformation amount is a deformation amount of the second wafer 3, and the second deformation amount includes a second incoming material deformation amount B2 corresponding to the second wafer 3 when the second wafer 3 is not processed by a process before production and manufacture, and a second process deformation amount C2 corresponding to the second wafer 3 before bonding. The process of processing the first wafer 2 and the second wafer 3 may include any one or at least two of a cleaning process, a film forming process, and an etching process.
Further, in the present embodiment, the method for obtaining the first wafer 2 and the second wafer 3 includes the steps of:
first,: a plurality of first initial wafers and a plurality of second initial wafers are obtained. The plurality of first initial wafers may include a plurality of wafers having a same structure or a same process correspondence in a same batch. The plurality of second initial wafers may include another batch of a plurality of wafers having the same structure or having the same process correspondence.
Furthermore, in the present embodiment, before, after, or simultaneously with providing the plurality of first initial wafers and the plurality of second initial wafers, the method further includes: acquiring a first initial deformation amount corresponding to each of the plurality of first initial wafers, and acquiring a second initial deformation amount corresponding to each of the plurality of second initial wafers.
In this embodiment, the first initial deformation amount corresponding to each first initial wafer is a deformation amount of the first initial wafer, where the first initial deformation amount includes a first initial incoming material deformation amount corresponding to the first initial wafer before production and manufacture, and a first initial process deformation amount corresponding to the first initial wafer after manufacture and before bonding. The second initial deformation amount corresponding to each second initial wafer is the deformation amount of the second initial wafer, wherein the second initial deformation amount comprises a second initial incoming material deformation amount corresponding to the second initial wafer before production and manufacture and a second initial process deformation amount corresponding to the second initial wafer after manufacture and manufacture process treatment until bonding.
And secondly, screening the first wafer 2 and the second wafer 3 which are matched with each other from the plurality of first initial wafers and the plurality of second initial wafers, wherein the difference value of the first deformation quantity corresponding to the first wafer 2 and the second deformation quantity corresponding to the second wafer 3 is in a first preset threshold range.
Further, in the present embodiment, the method for screening the first wafer and the second wafer that are matched with each other includes the following steps one to two.
In step one, a first initial wafer is selected from the plurality of first initial wafers to be used as the first wafer 2, and the first initial deformation amount corresponding to the selected first initial wafer is used as the first deformation amount.
The method for selecting the first wafer may be a random screening. Also possible are, for example: and taking the first initial wafer with the film thickness of the first initial wafer being within a preset film thickness threshold value or a related bonding parameter being within a preset parameter threshold value as a first wafer.
In the second step, a second initial wafer is selected from the plurality of second initial wafers, the second initial deformation corresponding to the selected second initial wafer is differed from the first deformation to obtain a second difference value, if the second difference value is within a first preset threshold range, the selected second initial wafer is used as the second wafer 3, and the second initial deformation corresponding to the selected second initial wafer is used as the second deformation.
In this embodiment, the first preset threshold range is-1 ppm to 1ppm. And if the second difference value is not within the first preset threshold value, namely, if the second difference value is not within-1 ppm to 1ppm, repeating the second step until the second wafer 3 matched with the first wafer 2 is screened out of the plurality of second initial wafers.
In this embodiment, since the first initial deformation includes a first initial incoming material deformation and a first initial process deformation, the second initial deformation includes a second initial incoming material deformation and a second initial process deformation. The second difference may include a second incoming material difference obtained by differencing the first initial incoming material deformation and the second initial incoming material deformation, and a second system Cheng Chazhi obtained by differencing the first initial process deformation and the second initial process deformation. And when the second incoming material difference value and the second system Cheng Chazhi are simultaneously within the first preset threshold range, the screened second initial wafer is taken as the second wafer 3.
Optionally, before pairing the plurality of first initial wafers and the plurality of second initial wafers, the method further includes: and eliminating the first abnormal wafers, corresponding to the first initial deformation, in the first initial wafers and located outside a second preset threshold range, and/or eliminating the second abnormal wafers, corresponding to the second initial deformation, in the second initial wafers and located outside the second preset threshold range. Wherein the second preset threshold range is 0ppm to 5ppm.
Further, after rejecting the first abnormal wafer and/or rejecting the second abnormal wafer, the method further includes: and executing a reworking process on the first abnormal wafer and/or the second abnormal wafer so as to enable the first reworking deformation corresponding to the first abnormal wafer after reworking to be in the second preset threshold range and/or enable the second reworking deformation corresponding to the second abnormal wafer after reworking to be in the second preset threshold range. In this embodiment, the reworked first abnormal wafer and the reworked second abnormal wafer may be paired again for bonding.
In this embodiment, the reworking process includes: thinning or thickening the thickness of a dielectric layer on the first abnormal wafer and/or the second abnormal wafer, or perforating on the first abnormal wafer and/or the second abnormal wafer. For example, a dielectric layer may be formed on the non-bonded surface of the first abnormal wafer and/or the second abnormal wafer processed by the high temperature process to perform rework. The dielectric layer on the non-bonding surface of the first abnormal wafer and/or the second abnormal wafer processed by the low-temperature processing technology can be etched to thin the dielectric layer for reworking.
In step S20, the first wafer 2 is deformed according to a preset deformation amount A1, and calculated according to the preset deformation amount A1, the first deformation amount, and the second deformation amount to obtain a theoretical deformation amount A2 corresponding to the second wafer 3, where a sum of the theoretical deformation amount A2 corresponding to the second wafer 3 and the second deformation amount is equal to a sum of the preset deformation amount A1 corresponding to the first wafer 2 and the first deformation amount.
In the present embodiment, the theoretical deformation amount calculation may be obtained by calculation according to the following formula (1) to obtain the theoretical deformation amount.
A1+b1+c1=a2+b2+c2—formula (1)
Wherein A1 represents the predetermined deformation amount, B1 represents the first initial deformation amount, C1 represents the first process deformation amount, A2 represents the theoretical deformation amount, B2 represents the second initial deformation amount, and C2 represents the second process deformation amount.
Further, after obtaining the theoretical deformation amount, the method further includes the following first and second steps.
In the first step, the actual deformation amount corresponding to the first deformation of the second wafer 3 is obtained, and the actual deformation amount and the theoretical deformation amount are differenced to obtain a first difference value.
In the second step, it is determined whether the first difference is equal to 0, and if the first difference is not equal to 0, the actual deformation amount of the second wafer 3 is compensated.
And repeating the first step to the second step until the difference between the actual deformation and the theoretical deformation is 0.
The method for compensating the actual deformation of the second wafer 3 comprises the following steps: and applying a force to the second wafer 3 to deform the second wafer 3 for the second time towards or away from the first wafer 2. In this embodiment, the method of applying the force when the second wafer 3 is deformed for the second time may include blowing the second wafer 3 in the first force direction Z1 or in the second force direction Z2.
In step S30, the second wafer 3 is deformed for the first time according to the theoretical deformation amount.
In this embodiment, the first wafer 2 is deformed according to the preset variable before bonding, and the theoretical deformation corresponding to the second wafer 3 is obtained by calculating according to the preset variable, the first deformation of the first wafer 2, and the second deformation of the second wafer 3. Therefore, the magnitude of the acting force applied to each second wafer 3 can be adjusted according to the theoretical deformation amount, so that the deformation amount of the bonded wafers is reduced, and the problem of lower wafer bonding yield is solved.
Further, with continued reference to fig. 2, the first chuck 1 and the second chuck 4 are disposed opposite to each other, and the first wafer 2 and the second wafer 3 are fixed to opposite surfaces of the first chuck 1 and the second chuck 4, respectively. In bonding, first, a force is applied to the first wafer 2 in the first force direction Z1 to deform the center position of the first wafer 2 toward the second wafer 3, so that the first wafer 2 is deformed according to the predetermined variable A1. Then, according to the calculated theoretical deformation amount C2 corresponding to the second wafer 2, a first acting force is applied to the second wafer 3 along the second acting force direction Z2, so that the center position of the second wafer 3 deforms towards the direction of the first wafer 2, and the deformation process of the first wafer 2 and the second wafer 3 is completed. Further, in the present embodiment, the first wafer 2 and the second wafer 3 may be forced to deform by blowing air to the first wafer 2 and the second wafer 3.
In step S40, the first wafer 2 and the second wafer 3 are bonded. The bonding method of the first wafer 2 and the second wafer 3 in this embodiment is not described herein in detail, and the actual situation is assumed.
Fig. 3 is a schematic diagram of a wafer bonding system in accordance with an embodiment of the present invention. Referring to fig. 2 in combination with fig. 3, the present invention further provides a wafer bonding system, including:
the data acquisition module 100 is configured to acquire and send out a first deformation amount corresponding to the first wafer 2, a second deformation amount corresponding to the second wafer 3, and a predetermined deformation amount corresponding to the first wafer 2.
A data processing module 200, where the data processing module 200 is configured to receive the first deformation, the second deformation, and the predetermined deformation sent by the data acquisition module 100; and calculating according to the pre-shaped variable, the first deformation and the second deformation to obtain a theoretical deformation corresponding to the second wafer 3.
The driving module 300 is configured to drive the first wafer 2 to deform according to the predetermined deformation amount A1, and drive the second wafer 3 to deform for the first time according to the theoretical deformation amount A2.
Further, in this embodiment, the data obtaining module 100 is further configured to obtain and store a first initial deformation amount corresponding to each of the plurality of first initial wafers, and obtain and store a second initial deformation amount corresponding to each of the plurality of second initial wafers.
Optionally, the data obtaining module 100 may further include an equipment automation system (EAP system) and a production management system (MES system), where the equipment automation system (EAP system) is configured to obtain and store the first initial deformation amount corresponding to each of the first initial wafers in the plurality of first initial wafers. The device automation system (EAP system) is configured to acquire and store the second initial deformation corresponding to each of the plurality of second initial wafers.
And, the data processing module 200 further includes: and the pairing system is used for screening the first wafer 2 and the second wafer 3 which are matched with each other from the first initial wafers and the second initial wafers respectively, wherein the difference value of the first deformation quantity corresponding to the first wafer 2 and the second deformation quantity corresponding to the second wafer 3 is within a first preset threshold range.
Further, the data processing module 200 further includes a compensation system, where the compensation system is configured to compensate the actual deformation amount of the second wafer until the difference between the actual deformation amount and the theoretical deformation amount is 0 when the first difference between the actual deformation amount and the theoretical deformation amount corresponding to the first deformation of the second wafer is not equal to 0.
In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, so that the same similar parts of each embodiment are referred to each other.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. A method of wafer bonding, the method comprising:
acquiring a first wafer and a second wafer, and acquiring a first deformation amount corresponding to the first wafer and a second deformation amount corresponding to the second wafer;
deforming the first wafer according to a pre-shaped variable, and calculating according to the pre-shaped variable, the first deformation and the second deformation to obtain a theoretical deformation of the second wafer, wherein the sum of the theoretical deformation and the second deformation of the second wafer is equal to the sum of the preset deformation and the first deformation of the first wafer;
adjusting the magnitude of acting force applied to the second wafer according to the theoretical deformation amount, so that the second wafer is deformed for the first time according to the theoretical deformation amount;
bonding the first wafer and the second wafer.
2. The wafer bonding method of claim 1, wherein the first deformation comprises a first incoming material deformation and a first process deformation, and the second deformation comprises a second incoming material deformation and a second process deformation; and calculating to obtain the theoretical deformation according to the following formula:
A1+B1+C1=A2+B2+C2
wherein A1 represents the pre-shaped variable;
b1 represents the first incoming material deformation amount;
c1 represents the first process deformation;
a2 represents the theoretical deformation amount;
b2 represents the second incoming material deformation amount;
c2 represents the second process deformation.
3. The wafer bonding method of claim 1, wherein after first deforming the second wafer, the method further comprises:
a first step of: acquiring an actual deformation amount corresponding to the first deformation of the second wafer, and performing difference between the actual deformation amount and the theoretical deformation amount to obtain a first difference value;
and a second step of: judging whether the first difference value is equal to 0, and if the first difference value is not equal to 0, compensating the actual deformation of the second wafer;
repeating the first step to the second step until the difference between the actual deformation and the theoretical deformation is 0.
4. The wafer bonding method of claim 1, wherein the method of acquiring the first wafer and the second wafer comprises:
acquiring a plurality of first initial wafers and a plurality of second initial wafers;
and respectively screening the first wafers and the second wafers which are matched with each other from the first initial wafers and the second initial wafers, wherein the first deformation corresponding to the first wafers and the difference value of the second deformation corresponding to the second wafers are in a first preset threshold range.
5. The wafer bonding method of claim 4, wherein before, after, or simultaneously with acquiring the plurality of first initial wafers and the plurality of second initial wafers, the method further comprises: acquiring a first initial deformation amount corresponding to each first initial wafer and acquiring a second initial deformation amount corresponding to each second initial wafer; and
the method for screening the first wafer and the second wafer which are matched with each other comprises the following steps:
step one: selecting a first initial wafer from the plurality of first initial wafers as the first wafer, and taking the first initial deformation corresponding to the selected first initial wafer as the first deformation;
step two: selecting a second initial wafer from the plurality of second initial wafers, and performing difference between the second initial deformation corresponding to the selected second initial wafer and the first deformation to obtain a second difference value, wherein if the second difference value is within a first preset threshold range, the selected second initial wafer is used as the second wafer, and the second initial deformation corresponding to the selected second initial wafer is used as the second deformation;
and if the second difference value is not in the first preset threshold range, repeating the second step until the second wafer matched with the first wafer is screened out.
6. The wafer bonding method according to claim 5, wherein the first predetermined threshold range is-1 ppm to 1ppm.
7. The wafer bonding method of claim 4, wherein prior to screening the first wafer and the second wafer that match each other, the method further comprises:
and eliminating the first abnormal wafers with the first initial deformation being out of a second preset threshold range in the plurality of first initial wafers, and/or eliminating the second abnormal wafers with the second initial deformation being out of the second preset threshold range in the plurality of second initial wafers.
8. The wafer bonding method of claim 7, wherein after rejecting the first abnormal wafer and/or rejecting the second abnormal wafer, the method further comprises:
and executing a reworking process on the first abnormal wafer and/or the second abnormal wafer, so that a first reworking deformation corresponding to the reworked first abnormal wafer is located in the second preset threshold range, and/or a second reworking deformation corresponding to the reworked second abnormal wafer is located in the second preset threshold range.
9. The wafer bonding method of claim 8, wherein the rework process comprises: thinning or thickening the thickness of the dielectric layer on the abnormal wafer; alternatively, holes are drilled in the abnormal wafer.
10. A wafer bonding system, comprising:
the data acquisition module is used for acquiring and sending out a first deformation amount corresponding to a first wafer, a second deformation amount corresponding to a second wafer and a pre-shaping variable corresponding to the first wafer;
the data processing module is used for receiving the first deformation amount, the second deformation amount and the preset deformation amount sent by the data acquisition module and obtaining a theoretical deformation amount corresponding to the second wafer according to the preset deformation amount, the first deformation amount and the second deformation amount, wherein the sum of the theoretical deformation amount and the second deformation amount is equal to the sum of the preset deformation amount and the first deformation amount;
the driving module is used for driving the first wafer to deform according to the preset deformation amount and adjusting the magnitude of the acting force applied to the second wafer according to the theoretical deformation amount so as to drive the second wafer to deform for the first time according to the theoretical deformation amount.
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| KR20190008496A (en) * | 2017-07-14 | 2019-01-24 | 그린정보통신(주) | Apparatus for detecting error in wafer fabrication process and method thereof |
| CN109560024A (en) * | 2018-11-06 | 2019-04-02 | 武汉新芯集成电路制造有限公司 | A kind of wafer bonding device and its bearing calibration |
| KR20200005333A (en) * | 2018-07-06 | 2020-01-15 | 삼성전자주식회사 | Wafer bonding apparatus and wafer bonding system using the same |
| CN111048429A (en) * | 2019-12-23 | 2020-04-21 | 武汉新芯集成电路制造有限公司 | Wafer bonding method |
| CN111542910A (en) * | 2018-03-14 | 2020-08-14 | 雷神公司 | Stress compensation and release in bonded wafers |
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| KR20190008496A (en) * | 2017-07-14 | 2019-01-24 | 그린정보통신(주) | Apparatus for detecting error in wafer fabrication process and method thereof |
| CN111542910A (en) * | 2018-03-14 | 2020-08-14 | 雷神公司 | Stress compensation and release in bonded wafers |
| KR20200005333A (en) * | 2018-07-06 | 2020-01-15 | 삼성전자주식회사 | Wafer bonding apparatus and wafer bonding system using the same |
| CN109560024A (en) * | 2018-11-06 | 2019-04-02 | 武汉新芯集成电路制造有限公司 | A kind of wafer bonding device and its bearing calibration |
| CN111048429A (en) * | 2019-12-23 | 2020-04-21 | 武汉新芯集成电路制造有限公司 | Wafer bonding method |
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