CN112390257A - 电子级多晶硅生产***和方法 - Google Patents
电子级多晶硅生产***和方法 Download PDFInfo
- Publication number
- CN112390257A CN112390257A CN202011301481.1A CN202011301481A CN112390257A CN 112390257 A CN112390257 A CN 112390257A CN 202011301481 A CN202011301481 A CN 202011301481A CN 112390257 A CN112390257 A CN 112390257A
- Authority
- CN
- China
- Prior art keywords
- tail gas
- trichlorosilane
- dichlorosilane
- treatment
- electronic grade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001179 sorption measurement Methods 0.000 claims abstract description 86
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract description 74
- 238000000926 separation method Methods 0.000 claims abstract description 74
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 27
- 238000003860 storage Methods 0.000 claims abstract description 17
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims abstract description 11
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims abstract description 11
- 229940045803 cuprous chloride Drugs 0.000 claims abstract description 11
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 claims abstract description 11
- 239000000969 carrier Substances 0.000 claims abstract description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 114
- 239000005052 trichlorosilane Substances 0.000 claims description 114
- 239000007789 gas Substances 0.000 claims description 109
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 238000005984 hydrogenation reaction Methods 0.000 claims description 41
- 229910052739 hydrogen Inorganic materials 0.000 claims description 37
- 239000001257 hydrogen Substances 0.000 claims description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 30
- 239000005049 silicon tetrachloride Substances 0.000 claims description 30
- 239000002994 raw material Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 20
- 239000011148 porous material Substances 0.000 claims description 12
- 230000035484 reaction time Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003456 ion exchange resin Substances 0.000 claims description 4
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 45
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052796 boron Inorganic materials 0.000 abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 16
- 239000011574 phosphorus Substances 0.000 abstract description 16
- 238000005265 energy consumption Methods 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000011863 silicon-based powder Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 4
- 229940050176 methyl chloride Drugs 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10784—Purification by adsorption
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011301481.1A CN112390257B (zh) | 2020-11-19 | 2020-11-19 | 电子级多晶硅生产***和方法 |
Applications Claiming Priority (1)
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CN202011301481.1A CN112390257B (zh) | 2020-11-19 | 2020-11-19 | 电子级多晶硅生产***和方法 |
Publications (2)
Publication Number | Publication Date |
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CN112390257A true CN112390257A (zh) | 2021-02-23 |
CN112390257B CN112390257B (zh) | 2021-09-21 |
Family
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Family Applications (1)
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CN202011301481.1A Active CN112390257B (zh) | 2020-11-19 | 2020-11-19 | 电子级多晶硅生产***和方法 |
Country Status (1)
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CN (1) | CN112390257B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115838175A (zh) * | 2022-11-02 | 2023-03-24 | 新特能源股份有限公司 | 一种去除氯硅烷中碳杂质的方法及*** |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101143723A (zh) * | 2007-08-08 | 2008-03-19 | 徐州东南多晶硅材料研发有限公司 | 制备三氯氢硅和多晶硅的改进方法和装置 |
CN204434297U (zh) * | 2015-01-27 | 2015-07-01 | 国电内蒙古晶阳能源有限公司 | 制备三氯氢硅的*** |
CN106698438A (zh) * | 2017-01-24 | 2017-05-24 | 江苏鑫华半导体材料科技有限公司 | 一种耦合的多晶硅生产*** |
CN206735809U (zh) * | 2017-02-06 | 2017-12-12 | 江苏鑫华半导体材料科技有限公司 | 一种电子级多晶硅的生产*** |
CN108467042A (zh) * | 2018-03-20 | 2018-08-31 | 中国恩菲工程技术有限公司 | 电子级多晶硅的制备方法 |
-
2020
- 2020-11-19 CN CN202011301481.1A patent/CN112390257B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101143723A (zh) * | 2007-08-08 | 2008-03-19 | 徐州东南多晶硅材料研发有限公司 | 制备三氯氢硅和多晶硅的改进方法和装置 |
CN204434297U (zh) * | 2015-01-27 | 2015-07-01 | 国电内蒙古晶阳能源有限公司 | 制备三氯氢硅的*** |
CN106698438A (zh) * | 2017-01-24 | 2017-05-24 | 江苏鑫华半导体材料科技有限公司 | 一种耦合的多晶硅生产*** |
CN206735809U (zh) * | 2017-02-06 | 2017-12-12 | 江苏鑫华半导体材料科技有限公司 | 一种电子级多晶硅的生产*** |
CN108467042A (zh) * | 2018-03-20 | 2018-08-31 | 中国恩菲工程技术有限公司 | 电子级多晶硅的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115838175A (zh) * | 2022-11-02 | 2023-03-24 | 新特能源股份有限公司 | 一种去除氯硅烷中碳杂质的方法及*** |
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Publication number | Publication date |
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CN112390257B (zh) | 2021-09-21 |
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Address after: 221004 No.66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: JIANGSU XINHUA SEMICONDUCTOR MATERIALS TECHNOLOGY CO.,LTD. |
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20210223 Assignee: Yangzhou Xinhua Semiconductor Technology Co.,Ltd. Assignor: Jiangsu Xinhua Semiconductor Technology Co.,Ltd. Contract record no.: X2024980007191 Denomination of invention: Electronic grade polycrystalline silicon production system and method Granted publication date: 20210921 License type: Common License Record date: 20240614 |