CN112383287A - Surface acoustic wave resonator and preparation method thereof - Google Patents
Surface acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN112383287A CN112383287A CN202011368256.XA CN202011368256A CN112383287A CN 112383287 A CN112383287 A CN 112383287A CN 202011368256 A CN202011368256 A CN 202011368256A CN 112383287 A CN112383287 A CN 112383287A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application discloses a surface acoustic wave resonator and a preparation method thereof, wherein the surface acoustic wave resonator comprises a piezoelectric substrate; the conductive layer comprises interdigital electrodes and is arranged on one side surface of the piezoelectric substrate; the aerogel layer is arranged on one side surface of the piezoelectric substrate and covers the interdigital electrode; the protective layer is arranged on one side surface of the piezoelectric substrate and covers the aerogel layer; the conducting layer further comprises a metal pin, and the metal pin is exposed. In this way, the acoustic surface resonator of this application replaces the cavity structures in the resonator with the porous aerogel material of light, and the density of aerogel layer is low, and is similar to the air, and the acoustic impedance is lower, can furthest avoid the energy loss of surface acoustic wave, and preparation simple process.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a surface acoustic wave resonator and a preparation method thereof.
Background
Surface-acoustic-wave (SAW). The acoustic surface wave resonator mainly uses the piezoelectric property of piezoelectric material, uses the input and output transducers to convert the input signal of electric wave into mechanical energy, and after processing, converts the mechanical energy into electric signal, so as to filter unnecessary signal and noise and raise the receiving quality. Is widely applied to various wireless communication systems, televisions, video recorders and global positioning system receivers.
The surface acoustic wave resonator comprises a resonant cavity, but the process for manufacturing the resonant cavity in the prior art is complex, and sacrificial layer filling, outer opening and corresponding sacrificial layer releasing processes are required. In addition, as the aspect ratio of the resonant cavity is reduced, the supporting structure of the upper layer film is too thin, which easily causes stress concentration and concave deformation of the film, and further causes deformation of the upper layer structure of the film.
Disclosure of Invention
The application provides a surface acoustic wave resonator and a preparation method thereof, which aim to solve the problems of complex manufacturing process and insufficient mechanical strength in the prior art.
In order to solve the technical problem, the application provides a surface acoustic wave resonator, which comprises a piezoelectric substrate; the conductive layer comprises interdigital electrodes and is arranged on one side surface of the piezoelectric substrate; the aerogel layer is arranged on one side surface of the piezoelectric substrate and covers the interdigital electrode; the protective layer is arranged on one side surface of the piezoelectric substrate and covers the aerogel layer; the conducting layer further comprises a metal pin, and the metal pin is exposed.
In order to solve the technical problem, the application provides a method for manufacturing a surface acoustic wave resonator, which comprises the following steps: arranging a conductive layer on one side surface of the piezoelectric substrate, wherein the conductive layer comprises interdigital electrodes and metal pins; spin-coating aerogel solution on the piezoelectric substrate, and drying to obtain an aerogel layer; obtaining an aerogel layer with a preset pattern through photoetching and etching, wherein the aerogel layer covers the interdigital electrode, and the metal pin is exposed; a protective layer is arranged on the aerogel layer through sputtering or evaporation, and the metal pins are exposed outside the protective layer through photoetching and etching.
The application provides a surface acoustic wave resonator and a preparation method thereof, wherein the surface acoustic wave resonator comprises a piezoelectric substrate; the conductive layer comprises interdigital electrodes and is arranged on one side surface of the piezoelectric substrate; the aerogel layer is arranged on one side surface of the piezoelectric substrate and covers the interdigital electrode; the protective layer is arranged on one side surface of the piezoelectric substrate and covers the aerogel layer; the conducting layer further comprises a metal pin, and the metal pin is exposed. In this way, the acoustic surface resonator of this application replaces the cavity structures in the resonator with the porous aerogel material of light, and the density of aerogel layer is low, and is similar to the air, and the acoustic impedance is lower, can furthest avoid the energy loss of surface acoustic wave, and preparation simple process.
Drawings
In order to more clearly illustrate the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a SAW resonator of the present application;
FIG. 2 is a schematic structural diagram of another embodiment of a SAW resonator of the present application;
FIG. 3 is a schematic flow chart of an embodiment of a method for manufacturing a SAW resonator according to the present application;
FIG. 4 is a schematic flow chart diagram illustrating an embodiment of a method for manufacturing a SAW resonator according to the present invention;
fig. 5 is a schematic flow process diagram of another embodiment of the method for manufacturing a surface acoustic wave resonator according to the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present application, the surface acoustic wave resonator and the method for manufacturing the same provided in the present application are further described in detail below with reference to the accompanying drawings and the detailed description.
The surface acoustic wave resonator is mainly composed of a piezoelectric substrate, an interdigital transducer IDT (or interdigital electrode) and a substrate. Surface acoustic waves generated by the piezoelectric effect propagate on the surface of the piezoelectric substrate. A resonant cavity filled with air is formed between the piezoelectric substrate, the interdigital transducer and the substrate. Because the acoustic impedance difference between the air and the piezoelectric material is large, the surface acoustic wave can form reflection on the interface of the air and the piezoelectric material in the process of propagation, and therefore propagation of the surface acoustic wave to the air is restrained.
The fabrication process of this cavity by the MEMS (Micro-Electro-Mechanical System) process is complicated. The common method is to form a cavity with a smooth surface on the substrate by photolithography and etching, and then fill the cavity with polysilicon or the like as a sacrificial layer. And then forming a surface film on the sacrificial layer by adopting a sputtering or evaporation method. And then, punching a hole on the side surface of the film layer, injecting etching liquid into the cavity through the hole, and removing the sacrificial layer such as polycrystalline silicon in the cavity to obtain the resonant cavity. Wherein the release effect of the sacrificial layer directly determines the resonance characteristics of the resonator. The remaining sacrificial layer may lower the Q value, affecting the center frequency of the resonator. The main drawbacks of the resonator obtained in this way are the increased process complexity, the need for sacrificial layer filling, the outside opening and the corresponding sacrificial layer release process. In addition, as the aspect ratio of the cavity is reduced, the supporting structure of the upper layer film is too thin, which easily causes stress concentration and concave deformation of the film, and further causes deformation of the upper layer structure of the film.
In order to solve the current problem, a cavity is formed at a layer of piezoelectric material and then bonded with a substrate, or a cavity with a certain shape is formed on the substrate and then bonded with a piezoelectric wafer. The method for independently manufacturing the cavity and then bonding the materials does not need to grow a sacrificial layer and worry about the problem of residual sacrificial layer. Meanwhile, as the piezoelectric material is not required to be etched and punched, the process steps in production are simplified to a certain extent, and the mechanical strength of the device is enhanced. However, the process still has the problem of insufficient support structure for some devices with wide cavities.
The surface acoustic wave resonator is of a novel structure, namely, a cavity structure in the resonator is replaced by a lightweight porous aerogel material, and then an aerogel film is used as a supporting material, so that other structures can be formed on the aerogel film. Aerogels themselves have a very low density, similar to air, and a low acoustic impedance. The aerogel is used as the filling material of the resonant cavity, so that the energy loss of the surface acoustic wave in the transmission process can be reduced to the greatest extent, and the more important significance is that after the aerogel is filled in the resonant cavity, the preparation process is greatly improved, and the mechanical strength of a device is enhanced.
Specifically, referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of an embodiment of a surface acoustic wave resonator according to the present application; fig. 2 is a schematic structural diagram of another embodiment of the surface acoustic wave resonator of the present application.
The surface acoustic wave resonator 100 may include a piezoelectric substrate 110, a conductive layer 120, an aerogel layer 130, and a protective layer 140.
The piezoelectric substrate 110 may be a piezoelectric wafer. Conductive layer 120 may include interdigitated electrodes 121 and metal pins 122. The metal pins 122 of the conductive layer 120 may be made of solder, gold, nickel, or other metal, or may be bumps. The conductive layer 120 may be disposed on one side surface of the piezoelectric substrate 110, and the aerogel layer 130 may be disposed on one side surface of the piezoelectric substrate 110, covering the interdigital electrodes 121. The protective layer 140 may be disposed on one side surface of the piezoelectric substrate 110, covering the aerogel layer 130. The metal pin 122 is exposed, and is used to electrically connect the surface acoustic wave resonator 100 to the outside.
Further, in some embodiments, such as the saw resonator 100 of fig. 2, a passivation layer 150 may also be included, and the passivation layer 150 may be disposed between the piezoelectric substrate 110 and the protective layer 140. The passivation layer 150 does not cover the interdigital electrode 121, and the passivation layer 150 covers a part of the metal pin 122. The aerogel layer 130 covers a portion of the passivation layer 150.
The aerogel layer 130 can include at least one of a silica aerogel, a silicon aerogel, a carbon aerogel, and a polydimethylsiloxane aerogel. Wherein, the silicon dioxide aerogel, the silicon aerogel and the carbon aerogel are inorganic gels; the polydimethylsiloxane aerogel is an organogel. The polydimethylsiloxane aerogel is only one example of an organogel, and in other embodiments, the aerogel layer 130 can be other organogels.
Among other things, the protective layer 140 functions to prevent the porous structure of the aerogel layer 130 from being directly exposed to air, so that it is contaminated by moisture or dust in the air. The material of the protective layer 140 may include any one of plastic, ceramic, or metal. Wherein the plastic can be resin plastic packaging materials such as epoxy resin, phenolic resin and the like; the ceramic can be compact ceramic materials such as silicon dioxide, silicon nitride and the like, and the metal can be metal materials such as aluminum, copper, nickel, chromium and the like.
It should be noted that the surface acoustic wave resonator of the present application can be manufactured by directly coating the interdigital electrode with aerogel, where the protective layer that can be selected is an insulating material such as a plastic package material or ceramic, as shown in fig. 1. Metal may also be used as the protective layer, in which case an insulating material is plated on the surface of the piezoelectric substrate in advance as a passivation layer, as shown in fig. 2.
The embodiment provides a new surface acoustic wave resonator structure, namely, a lightweight porous aerogel material replaces a cavity structure in a resonator, and then an aerogel film is used as a supporting material, and other structures can be formed on the aerogel film. Aerogels themselves have a very low density, similar to air, and a low acoustic impedance. The aerogel is used as the filling material of the resonant cavity, so that the energy loss of the surface acoustic wave in the transmission process can be reduced to the maximum extent. More importantly, after the resonant cavity is filled with aerogel, the preparation process is greatly improved, and the mechanical strength of the device is enhanced.
Referring to fig. 3 to 5, fig. 3 is a schematic flow chart of an embodiment of the method for manufacturing a surface acoustic wave resonator according to the present application; FIG. 4 is a schematic flow chart diagram illustrating an embodiment of a method for manufacturing a SAW resonator according to the present invention; fig. 5 is a schematic flow process diagram of another embodiment of the method for manufacturing a surface acoustic wave resonator according to the present application.
As shown in fig. 3, the method for manufacturing the surface acoustic wave resonator of the present embodiment may include the steps of:
s110: and arranging a conductive layer on one side surface of the piezoelectric substrate, wherein the conductive layer comprises interdigital electrodes and metal pins.
Providing a piezoelectric substrate 110, wherein the piezoelectric substrate 110 includes two side surfaces, and a conductive layer 120 is disposed on one side surface of the piezoelectric substrate 110, wherein the conductive layer 120 is a conductive layer 120 with a predetermined pattern, and the conductive layer 120 may include interdigital electrodes 121 and metal pins 122.
S120: and arranging a passivation layer on one side surface of the piezoelectric substrate.
A photoresist is coated on one side surface of the piezoelectric substrate 110, wherein the photoresist may be 4100 photoresist. Obtaining a photoresist layer 160 of a preset pattern through exposure/development; wherein the photoresist layer 160 covers the interdigital electrode 121 and the metal pin 122. Then, a passivation layer 150 is formed on the surface of the piezoelectric substrate 110 by sputtering or evaporation, and the photoresist layer 160 is stripped off, so that the interdigital electrode 121 is completely exposed and the metal pin 122 is partially exposed. The remainder of the piezoelectric substrate 100 is covered by a passivation layer 150.
It should be noted that in some embodiments, the passivation layer 150 does not need to be fabricated, i.e., the step S130 can be directly performed after the step S110, and the step S120 can be omitted in some embodiments, as shown in the flowchart process diagram of an embodiment shown in fig. 4.
S130: and (3) spinning and coating the aerogel solution on the piezoelectric substrate, and drying to obtain the aerogel layer.
Taking a silica aerogel layer as an example, a silicon source is hydrolyzed to form a sol, a gelling agent is added into the sol, and before the beginning of gelling, the silica aerogel layer is uniformly coated on one side surface of the piezoelectric substrate 110 to form a wet gel on the one side surface of the piezoelectric substrate 110, and the wet gel is formed by drying in a normal pressure or supercritical manner.
Specifically, the silica sol can be obtained by mixing a silicon source, an organic solvent, deionized water, a proper amount of acid, a modifier and the like in proportion, stirring uniformly, heating properly, and then aging the mixed solution at normal temperature for a period of time.
Taking a small amount of silica sol, adding a proper amount of alkali catalyst, standing for a period of time, performing spin coating on the piezoelectric substrate 110 on one side of the interdigital electrode 121, and adjusting the rotating speed of a spin coater to obtain the piezoelectric substrate 110 coated with silica wet gel with a specific thickness.
An aerogel thin film is formed on the surface of the piezoelectric substrate 110 by a method such as spin coating, and the piezoelectric substrate coated with the silica wet gel is left standing at room temperature for a certain period of time, and after the gel is shaped, it is immersed in an organic solvent used for sol preparation for several days. The gel was kept wet and the organic solvent was replaced periodically. The silica wet gel is dried, and finally a silica aerogel film is formed on the surface of the piezoelectric substrate 110.
In this embodiment, the aerogel layer is formed on the interdigital electrode by spin coating, and is applicable to interdigital electrodes with various structures. Even for the interdigital electrode with a complex form, the method can also achieve good coverage effect.
S140: and obtaining an aerogel layer with a preset pattern through photoetching and etching, wherein the aerogel layer covers the interdigital electrode, and the metal pin is exposed.
And removing the redundant aerogel part by means of photoetching and dry/wet etching, so that the aerogel covers the interdigital electrode. And stripping the photoresist to obtain the silicon dioxide aerogel film pattern with fixed shape and size.
S150: a protective layer is arranged on the aerogel layer through sputtering or evaporation, and the metal pins are exposed outside the protective layer through photoetching and etching.
The surface of the aerogel thin film is covered with a protective layer 140 by sputtering or evaporation, and the metal pins 122 are exposed by photolithography and dry/wet etching. The material of the protection layer 140 may be a plastic material, a ceramic material or a metal material.
Wherein, the surface of the metal pin 122 may be covered with a part of the protection layer 140; the surface of the metal pin 122 may be covered with a portion of the passivation layer 150.
The application provides a surface acoustic wave resonator and a preparation method thereof, wherein the surface acoustic wave resonator comprises a piezoelectric substrate; the conductive layer comprises interdigital electrodes and is arranged on one side surface of the piezoelectric substrate; the aerogel layer is arranged on one side surface of the piezoelectric substrate and covers the interdigital electrode; the protective layer is arranged on one side surface of the piezoelectric substrate and covers the aerogel layer; the conducting layer further comprises a metal pin, and the metal pin is exposed. In this way, the acoustic surface resonator of this application replaces the cavity structures in the resonator with the porous aerogel material of light, and the density of aerogel layer is low, and is similar to the air, and the acoustic impedance is lower, can furthest avoid the energy loss of surface acoustic wave, and preparation simple process.
It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. In addition, for convenience of description, only a part of structures related to the present application, not all of the structures, are shown in the drawings. The step numbers used herein are also for convenience of description only and are not intended as limitations on the order in which the steps are performed. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first", "second", etc. in this application are used to distinguish between different objects and not to describe a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. A surface acoustic wave resonator, comprising:
a piezoelectric substrate;
the conductive layer comprises interdigital electrodes and is arranged on one side surface of the piezoelectric substrate;
the aerogel layer is arranged on one side surface of the piezoelectric substrate and covers the interdigital electrode;
the protective layer is arranged on one side surface of the piezoelectric substrate and covers the aerogel layer;
the conductive layer further comprises a metal pin, and the metal pin is exposed.
2. The SAW resonator of claim 1, further comprising:
a passivation layer disposed between the piezoelectric substrate and the protective layer; wherein the aerogel layer covers a portion of the passivation layer.
3. A surface acoustic wave resonator according to claim 1, wherein the aerogel layer includes at least one of silica aerogel, silicon aerogel, carbon aerogel, and polydimethylsiloxane aerogel.
4. A surface acoustic wave resonator according to claim 1, wherein said protective layer material comprises any one of plastic, ceramic, or metal.
5. A method for manufacturing a surface acoustic wave resonator, comprising:
arranging a conductive layer on one side surface of the piezoelectric substrate, wherein the conductive layer comprises interdigital electrodes and metal pins;
spin-coating an aerogel solution on the piezoelectric substrate, and drying to obtain an aerogel layer;
obtaining an aerogel layer with a preset pattern through photoetching and etching, wherein the aerogel layer covers the interdigital electrode, and the metal pin is exposed;
and arranging a protective layer on the aerogel layer through sputtering or evaporation, and exposing the metal pins outside the protective layer through photoetching and etching.
6. The method of manufacturing a surface acoustic wave resonator according to claim 5, further comprising, after providing a conductive layer on one surface of the piezoelectric substrate:
coating photoresist on the surface of one side of the piezoelectric substrate, and obtaining a photoresist layer with a preset pattern through exposure and development; wherein the photoresist layer covers the interdigital electrodes and the metal pins;
and forming a passivation layer on the surface of the piezoelectric substrate through sputtering or evaporation, and stripping the photoresist layer to expose the interdigital electrode and part of the metal pin.
7. The method of manufacturing a surface acoustic wave resonator according to claim 5, wherein the spin coating of an aerogel solution on the piezoelectric substrate comprises:
the method comprises the steps of hydrolyzing silica to form sol, adding a gelling agent into the sol, and uniformly coating the sol on one side surface of the piezoelectric substrate before starting gelling to form wet gel on the one side surface of the piezoelectric substrate.
8. The method of manufacturing a surface acoustic wave resonator according to claim 7, wherein the drying results in an aerogel layer comprising:
the wet gel is formed by drying in a normal pressure or supercritical mode.
9. The method of manufacturing a surface acoustic wave resonator according to claim 4, wherein the aerogel layer includes at least one of silica aerogel, silicon aerogel, carbon aerogel, and polydimethylsiloxane aerogel.
10. The method of manufacturing a surface acoustic wave resonator according to claim 4, wherein the protective layer material includes any one of plastic, ceramic, or metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011368256.XA CN112383287A (en) | 2020-11-27 | 2020-11-27 | Surface acoustic wave resonator and preparation method thereof |
Applications Claiming Priority (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117155333A (en) * | 2023-06-29 | 2023-12-01 | 锐石创芯(重庆)科技有限公司 | Surface acoustic wave resonator, filter, multiplexer and radio frequency front end module |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113609A (en) * | 1981-01-07 | 1982-07-15 | Toshiba Corp | Surface acoustic wave device |
| JPH04239210A (en) * | 1991-01-11 | 1992-08-27 | Murata Mfg Co Ltd | Surface wave device and its production |
| JPH05183369A (en) * | 1991-10-30 | 1993-07-23 | Murata Mfg Co Ltd | Surface wave device |
| DE4328794A1 (en) * | 1993-08-26 | 1995-03-02 | Siemens Ag | Housing for SAW components |
| EP1026823A2 (en) * | 1999-02-08 | 2000-08-09 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device having a resinous film to cover an electrode pattern |
| US20020140525A1 (en) * | 2001-03-29 | 2002-10-03 | Martin Goetz | Wafer-scale package for surface acoustic wave circuit and method of manufacturing the same |
| US6466105B1 (en) * | 1999-07-07 | 2002-10-15 | Koninklijke Philips Electronics N.V. | Bulk acoustic wave filter |
| CN1383610A (en) * | 2000-04-06 | 2002-12-04 | 皇家菲利浦电子有限公司 | Tunable filter arrangement comprising resonator |
| CN109257026A (en) * | 2018-09-30 | 2019-01-22 | 天津大学 | Flexible substrates thin film bulk acoustic wave resonator and forming method thereof |
| CN111146330A (en) * | 2019-12-30 | 2020-05-12 | 北京中科飞鸿科技股份有限公司 | Preparation method of passivation layer of copper film surface acoustic wave filter |
| US20200259480A1 (en) * | 2019-02-08 | 2020-08-13 | Vtt Technical Research Centre Of Finland Ltd | Low loss acoustic device |
| CN111865248A (en) * | 2020-04-30 | 2020-10-30 | 诺思(天津)微***有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
-
2020
- 2020-11-27 CN CN202011368256.XA patent/CN112383287A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113609A (en) * | 1981-01-07 | 1982-07-15 | Toshiba Corp | Surface acoustic wave device |
| JPH04239210A (en) * | 1991-01-11 | 1992-08-27 | Murata Mfg Co Ltd | Surface wave device and its production |
| JPH05183369A (en) * | 1991-10-30 | 1993-07-23 | Murata Mfg Co Ltd | Surface wave device |
| DE4328794A1 (en) * | 1993-08-26 | 1995-03-02 | Siemens Ag | Housing for SAW components |
| EP1026823A2 (en) * | 1999-02-08 | 2000-08-09 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device having a resinous film to cover an electrode pattern |
| US6466105B1 (en) * | 1999-07-07 | 2002-10-15 | Koninklijke Philips Electronics N.V. | Bulk acoustic wave filter |
| CN1383610A (en) * | 2000-04-06 | 2002-12-04 | 皇家菲利浦电子有限公司 | Tunable filter arrangement comprising resonator |
| US20020140525A1 (en) * | 2001-03-29 | 2002-10-03 | Martin Goetz | Wafer-scale package for surface acoustic wave circuit and method of manufacturing the same |
| CN109257026A (en) * | 2018-09-30 | 2019-01-22 | 天津大学 | Flexible substrates thin film bulk acoustic wave resonator and forming method thereof |
| US20200259480A1 (en) * | 2019-02-08 | 2020-08-13 | Vtt Technical Research Centre Of Finland Ltd | Low loss acoustic device |
| CN111146330A (en) * | 2019-12-30 | 2020-05-12 | 北京中科飞鸿科技股份有限公司 | Preparation method of passivation layer of copper film surface acoustic wave filter |
| CN111865248A (en) * | 2020-04-30 | 2020-10-30 | 诺思(天津)微***有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117155333A (en) * | 2023-06-29 | 2023-12-01 | 锐石创芯(重庆)科技有限公司 | Surface acoustic wave resonator, filter, multiplexer and radio frequency front end module |
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