CN112379242B - Chip failure point positioning method, device and system - Google Patents
Chip failure point positioning method, device and system Download PDFInfo
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- CN112379242B CN112379242B CN202011163560.0A CN202011163560A CN112379242B CN 112379242 B CN112379242 B CN 112379242B CN 202011163560 A CN202011163560 A CN 202011163560A CN 112379242 B CN112379242 B CN 112379242B
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Abstract
The application relates to a chip failure point positioning method, a device and a system, wherein the chip failure point positioning method comprises the steps of obtaining an optical signal emitted after a chip is electrified; separating the optical signals and outputting a plurality of optical radiation images with specific wave bands; and comparing the light radiation images of a plurality of specific wave bands with a structural topography of a preset good chip to determine wavelength information of a chip failure point. The method and the device can realize detection and analysis of the wavelength of the failure point of the semiconductor chip, can not introduce new failure to the chip in the analysis process, improve the efficiency and accuracy of the failure analysis of the semiconductor chip, and can be widely applied to testing links of chip design and production, links such as after-sale problem feedback and the like.
Description
Technical Field
The application belongs to the technical field of semiconductor chips, and particularly relates to a chip failure point positioning method, device and system.
Background
With the rapid development of information technology and intelligent devices, the semiconductor integration degree following moore's law is higher and higher, the feature size is smaller and smaller, and even hundreds of millions of transistors are integrated on one chip, so that the difficulty in positioning the internal active region of the semiconductor chip after failure is more and more prominent. The semiconductor failure location technology is a technical means for locating a failure point after a failure occurs in a semiconductor chip, and different characteristics are generally expressed according to a failure mode of a semiconductor. For example, by means of lapping, cutting, polishing, etc., a new damage is given to the semiconductor chip.
In the related art, an infrared thermal imaging microscope is used to detect the failure point of the chip, wherein the principle is the infrared thermal imaging technology. Infrared thermal imaging uses a photoelectric technology to detect infrared specific waveband signals of object thermal radiation, converts the signals into images and graphs which can be distinguished by human vision, and carries out imaging light-dark contrast through the radiation energy of thermal imaging so as to detect failure points. However, the thermal imaging band is an infrared band, the wavelength is larger than 1600nm, and the longer the wavelength is, the smaller the resolution ratio is, so that the positioning accuracy is low.
Disclosure of Invention
In order to overcome the problems that the semiconductor chip is newly damaged by means of grinding, cutting, polishing, unsealing and corroding and the failure point positioning accuracy rate of the chip is low by using an infrared thermal imaging microscope in the related technology, the invention provides a chip failure point positioning method, device and system.
In a first aspect, the present application provides a method for locating a chip failure point, including:
acquiring an optical signal emitted by the chip after being electrified;
separating the optical signals and outputting a plurality of optical radiation images with specific wave bands;
and comparing the light radiation images of the specific wave bands with a structural topography of a preset good chip to determine wavelength information of a chip failure point.
Further, the separating the optical signal includes:
and selectively filtering the optical signals to output a plurality of specific waveband optical signals and specific waveband range information corresponding to the specific waveband optical signals.
Further, the outputting a plurality of light radiation images of specific wave bands includes:
inputting the plurality of specific wave band optical signals into an optical radiation microscope to generate a plurality of specific wave band optical radiation images;
and splicing the plurality of optical radiation images of the specific wave bands with the specific wave band range information to output a plurality of optical radiation images of the specific wave bands comprising the specific wave band range information.
Further, after outputting a plurality of optical radiation images of specific wavelength bands including information of specific wavelength band ranges, the method further includes:
establishing a corresponding relation between a specific wave band and colors;
according to the corresponding relation, dyeing a plurality of light radiation images with specific wave bands including specific wave band range information into light radiation color images with corresponding colors;
and superposing the light radiation color images with different colors to obtain a light radiation complete color image.
Further, the comparing the optical signals with multiple wavelengths with a preset good chip structure profile map to determine wavelength information of a chip failure point includes:
comparing the light radiation complete color image with a preset good chip structure profile map;
determining color information of a failure point in the light radiation complete color image according to the comparison result;
and determining the wavelength information of the chip failure point according to the failure point color information.
Further, the method also comprises the following steps:
determining the position information of the failure point in the complete light radiation color image according to the comparison result;
and determining the position of the chip failure point according to the failure point position information.
Further, the selectively filtering the optical signal to output a plurality of optical signals of specific wavelength bands includes:
inputting the optical signals into optical filters with different wave bands to obtain a plurality of optical signals with specific wave bands;
and/or the presence of a gas in the gas,
inputting the optical signals into an interferometer with selectable wavelengths to obtain a plurality of optical signals with specific wave bands;
and/or the presence of a gas in the gas,
and inputting the optical signal into a grating light splitting lens group to obtain a plurality of optical signals with specific wave bands.
Further, the specific band range includes: 900nm-1000nm wide wavelength band, 1050nm-1150nm wide wavelength band and 1200nm-1600nm wide wavelength band.
Further, the specific band range includes: and a plurality of narrow wavelength bands are uniformly divided into the 900nm-1600nm wave bands according to preset intervals.
Further, the preset interval is 10nm interval.
Further, the light radiation microscope includes:
a detector for a plurality of wavelength ranges.
Further, the staining a plurality of light radiation images of specific wave bands including information of specific wave band ranges into light radiation color images of corresponding colors according to the corresponding relationship includes:
projecting the light radiation images of a plurality of specific wave bands to a visible light wave band according to the specific proportion to output the light radiation images of a plurality of visible light wave bands;
and dyeing the light radiation images of the plurality of visible light wave bands to generate light radiation color images of the visible light wave bands with different colors.
Further, the method also comprises the following steps:
respectively acquiring the wave band width of a detector and the wave band width of visible light;
and taking the ratio of the detector wave band width and the visible light wave band width as the specific ratio.
Further, the obtaining the detector band width includes:
and acquiring the width of a photosensitive range of the detector, and determining the width of a detector wave band according to the width of the photosensitive range of the detector.
Further, the acquiring the visible light waveband width includes:
and acquiring the width of a visible light range, and determining the width of a visible light wave band according to the width of the visible light range.
Further, the method also comprises the following steps:
and analyzing the failure type of the failure point of the chip.
Further, the analyzing the failure type of the chip failure point includes:
obtaining the direct transition radiation optical wavelength of a substrate material;
comparing the wavelength information of the chip failure point with the wavelength of the direct transition radiation light;
and determining the failure type of the chip failure point according to the comparison result.
Further, the determining the failure type of the chip failure point according to the comparison result includes:
determining the failure type to be one or more of hot carrier injection effect, gate oxide defect, tunnel breakdown under PN junction reverse bias voltage and avalanche breakdown under PN junction reverse bias voltage when the wavelength information of the chip failure point is less than the wavelength of direct transition radiation;
when the wavelength information of the chip failure point is the same as or close to the wavelength of the direct transition radiation light, determining the failure type to comprise one or more of PN positive bias and latch-up effect of the CMOS device;
and determining the failure type as an unknown failure type when the wavelength information of the failure point of the chip is greater than the wavelength of the emission light of the direct transition radiation light wavelength.
In a second aspect, the present application provides a chip failure point positioning apparatus, including:
the acquisition module is used for acquiring an optical signal emitted by the chip after being electrified;
the separation module is used for separating the optical signals and outputting a plurality of optical radiation images with specific wave bands;
and the positioning module is used for comparing the optical radiation images of the specific wave bands with a structural topography of a preset good chip to determine wavelength information of a failure point of the chip.
In a third aspect, the present application provides a chip failure point positioning system, comprising:
the chip failure point positioning device, the light filtering device and the microscope according to the second aspect;
the chip failure point positioning device is respectively connected with the light filtering device and the microscope.
Further, the microscope is a light radiation microscope.
Further, the filtering device is one or more of a filter, a wavelength-selectable interferometer and a grating beam splitting lens group.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
the chip failure point positioning method comprises the steps of obtaining optical signals emitted after the chip is electrified, separating the optical signals, outputting optical radiation images of a plurality of specific wave bands, comparing the optical radiation images of the specific wave bands with a preset good chip structure appearance diagram to determine wavelength information of the chip failure point, detecting and analyzing the wavelength of the semiconductor chip failure point, introducing no new failure to the chip in the analysis process, improving the efficiency and accuracy of the semiconductor chip failure analysis, and being widely applicable to testing links of chip design and production, after-sales problem feedback and other links.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Fig. 1 is a flowchart of a method for locating a chip failure point according to an embodiment of the present disclosure.
Fig. 2 is a flowchart of a method for locating a chip failure point according to another embodiment of the present disclosure.
Fig. 3 is a flowchart of a method for locating a chip failure point according to another embodiment of the present disclosure.
Fig. 4 is a schematic diagram of an image staining scheme provided in an embodiment of the present application.
Fig. 5 is a flowchart of a method for locating a chip failure point according to another embodiment of the present disclosure.
Fig. 6 is an experimental diagram of a method for positioning a failure point of a chip according to an embodiment of the present disclosure.
Fig. 7 is a functional structure diagram of a chip failure point positioning apparatus according to an embodiment of the present application.
Fig. 8 is a functional block diagram of a chip failure point positioning system according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail below. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a flowchart of a chip fail point positioning method according to an embodiment of the present application, and as shown in fig. 1, the chip fail point positioning method includes:
s11: acquiring an optical signal emitted by the chip after being electrified;
before positioning the failure point of the chip, the chip is electrified to enable current to flow in the chip, electrons of a PN junction in the chip are stimulated to transition and are combined with holes in a low energy level, and redundant energy is released in a photon radiation mode, so that optical signals with two-dimensional position information can be radiated at different positions on the surface of the semiconductor chip. It should be noted that, in order to ensure the light radiation effect, the sample needs to be exposed to the air with the silicon substrate facing upward, so as to ensure that no obstacles such as encapsulation, metal layer, etc. exist in the light radiation path.
S12: separating the optical signals and outputting a plurality of optical radiation images with specific wave bands;
s13: and comparing the light radiation images of a plurality of specific wave bands with a structural topography of a preset good chip to determine wavelength information of a chip failure point.
Common semiconductor failure positioning technologies comprise a positioning means for detecting the chip failure point by grinding, cutting, polishing and unsealing corrosion and an infrared thermal imaging microscope, and a new failure point is easily introduced in the analysis process by the positioning means for detecting the chip failure point by grinding, cutting, polishing and unsealing corrosion; infrared thermal imaging uses a photoelectric technology to detect infrared specific waveband signals of object thermal radiation, converts the signals into images and graphs which can be distinguished by human vision, and carries out imaging light-dark contrast through the radiation energy of thermal imaging so as to detect failure points. However, the thermal imaging band is an infrared band, the wavelength is larger than 1600nm, and the longer the wavelength is, the smaller the resolution ratio is, so that the positioning accuracy is low.
In the embodiment, the optical signals emitted after the chip is powered on are acquired, the optical signals are separated, the optical radiation images of a plurality of specific wave bands are output, the optical radiation images of the specific wave bands are compared with the structural morphology graph of the preset good chip to determine the wavelength information of the failure point of the chip, the detection and analysis of the wavelength of the failure point of the semiconductor chip can be realized, no new failure is introduced to the chip in the analysis process, the efficiency and the accuracy of the failure analysis of the semiconductor chip are improved, and the method and the device can be widely applied to testing links of chip design and production, after-sale problem feedback and other links.
Another embodiment of the present application provides a method for positioning a chip failure point, as shown in the flowchart of fig. 2, the method for positioning a chip failure point includes:
s21: and selectively filtering the optical signals to output a plurality of specific waveband optical signals and specific waveband range information corresponding to the specific waveband optical signals.
In some embodiments, the optical signal is selectively filtered to output a plurality of optical signals in a specific wavelength band, including but not limited to the following:
mode 1: inputting optical signals into optical filters with different wave bands to obtain a plurality of optical signals with specific wave bands;
mode 2: inputting the optical signals into an interferometer with selectable wavelengths to obtain a plurality of optical signals with specific wave bands;
mode 3: and inputting the optical signal into a grating light splitting lens group to acquire a plurality of optical signals with specific wave bands.
After the emitted optical signals are subjected to wavelength selection and filtering, only the optical signals with specific wavelengths pass through, so that a plurality of optical signals with specific wave bands are obtained.
S22: inputting a plurality of optical signals with specific wave bands into an optical radiation microscope to generate a plurality of optical radiation images with specific wave bands;
s23: and splicing the plurality of optical radiation images of the specific wave bands with the specific wave band range information to output a plurality of optical radiation images of the specific wave bands including the specific wave band range information.
In some embodiments, the specific band range includes: 900nm-1000nm wide wavelength band, 1050nm-1150nm wide wavelength band and 1200nm-1600nm wide wavelength band.
Alternatively, the specific band range includes: and a plurality of narrow wavelength bands are uniformly divided into the 900nm-1600nm wave bands according to preset intervals. The preset interval is, for example, a 10nm interval.
Taking a silicon substrate chip as an example, the selection scheme for providing the filtering band comprises:
first, 900nm-1600nm wide wavelength selection scheme: the wave bands are divided into three wide wavelength bands of 900nm-1000nm, 1050nm-1150nm and 1200nm-1600nm, so that three optical wavelength signals are identified, the three optical wavelength signals are consistent with three failure modes of a semiconductor, and the corresponding failure types in three wavelength ranges can be conveniently and initially identified.
Second, 900nm-1600nm narrow wavelength selection scheme: the method comprises the steps of uniformly dividing a 900nm-1600nm wave band into a plurality of equal parts, selecting and filtering 900nm optical signals at intervals of 10nm, then selecting and filtering 910nm optical signals, and so on, and dyeing and superposing optical signal images with different wavelengths according to subsequent image processing. At the moment, the color details of the chip light radiation color image with the wavelength information are richer, and an analyst can be helped to judge more comprehensive wavelength information of the abnormal light emitting point of the chip.
Splicing a plurality of light radiation images with specific wave bands and specific wave band range information and corresponding a single specific wavelength image with a specific wavelength value, such as: the method comprises the steps of forming two-dimensional images (a, b and c) of optical signals subjected to specific waveband range selection filtering, outputting images (a1-a, b1-b and c1-c) of specific waveband range information (such as a1, b1 and c1), and superposing the images with the optical appearance of a sample.
S24: establishing a corresponding relation between a specific wave band and colors;
s25: dyeing a plurality of light radiation images with specific wave bands including specific wave band range information into light radiation color images with corresponding colors according to the corresponding relation;
s26: and superposing the light radiation color images with different colors to obtain a light radiation complete color image.
S27: comparing the light radiation complete color image with a preset good chip structure profile map;
s28: determining color information of a failure point in the light radiation complete color image according to the comparison result;
s29: and determining the wavelength information of the failure point of the chip according to the color information of the failure point.
In some embodiments, further comprising:
determining the position information of the failure point in the complete light radiation color image according to the comparison result;
and determining the position of the chip failure point according to the failure point position information.
The conventional failure position identification based on light radiation can present information that only brightness information identifies failure positions through brightness, and can not obtain more chip failure information.
In the embodiment, through dyeing processing, the wavelength information of the chip failure point is determined according to the color information of the failure point, and the wavelength information of the chip failure point can be presented, so that richer image information can be obtained, failure analysis personnel can be helped to carry out deeper analysis and identification and judgment of a failure mode, the accuracy of chip failure analysis is improved, and a basis for improvement measures is provided for subsequent root cause analysis and risk identification.
Fig. 3 is a flowchart of a chip fail point positioning method according to another embodiment of the present application, and as shown in fig. 3, the chip fail point positioning method includes:
s31: respectively acquiring the wave band width of a detector and the wave band width of visible light;
in some embodiments, the optical radiation microscope comprises:
a detector for a plurality of wavelength ranges.
Two-dimensional optical signals with specific wavelength are projected onto a high-sensitivity light detector through a light radiation microscope system, detected photons are converted into electric signals, the electric signals are output to a computer, and the electric signals are converted into images which can be recognized by human eyes. The detector comprises a Si-CCD detector and an InGaAs detector, the wavelength ranges of the detection are different, the Si-CCD detector is suitable for an ultraviolet light wave band of 900nm and is generally used for detecting light radiation signals of second generation semiconductors and third generation semiconductors, and the InGaAs detector is suitable for a wave band of 900nm to 1600nm and is used for detecting light signals radiated by a semiconductor chip made of a silicon substrate.
Obtaining a detector band width comprising:
and acquiring the width of a photosensitive range of the detector, and determining the width of a detector wave band according to the width of the photosensitive range of the detector.
Acquiring the width of a visible light waveband, comprising:
and acquiring the width of a visible light range, and determining the width of a visible light wave band according to the width of the visible light range.
S32: the ratio of the detector band width to the visible band width is taken as a specific ratio.
S33: projecting the light radiation images of a plurality of specific wave bands to a visible light wave band according to a specific proportion to output the light radiation images of a plurality of visible light wave bands;
s34: and dyeing the light radiation images of the plurality of visible light wave bands to generate light radiation color images of the visible light wave bands of different colors.
As shown in fig. 4, when the photosensitive range is in the near infrared band and belongs to the invisible light range, such as the photosensitive range 900nm to 1600nm of an InGaAs detector, the band width is 700nm, and the band width can be 300nm according to the photosensitive range (visible light range) of human eyes of 400nm to 700nm, that is:
when the filtering scheme is 10nm interval, the 900nm-1600nm is evenly divided into 70 parts, namely 71 pieces of light with the wavelength of lambda are suppliednWhen lambda isn900+ nx10 (n ═ 0,1,2 … … 70), units nm;
projecting the light beams to visible light band in equal proportion, namely the wavelength of the visible light band
The unit nm. The light signals of the 71 images are dyed and then superposed to obtain a light radiation color image with light wavelength information which can be seen by human eyes.
In this embodiment, the light radiation images of the plurality of specific wavelength bands are projected to the visible light wavelength bands according to a specific ratio to output the light radiation images of the plurality of visible light wavelength bands, and the light radiation images of the plurality of visible light wavelength bands are dyed to generate light radiation color images of the visible light wavelength bands of different colors, which is helpful for identifying wavelength information of the failure point so as to facilitate a user to confirm the failure type according to the wavelength information of the failure point.
Fig. 5 is a flowchart of a chip fail point positioning method according to another embodiment of the present application, and as shown in fig. 5, the chip fail point positioning method further includes:
analyzing the failure type of the chip failure point, specifically comprising:
s51: obtaining the direct transition radiation optical wavelength of a substrate material;
s52: comparing the wavelength information of the chip failure point with the wavelength of the direct transition radiation light;
s53: and determining the failure type of the chip failure point according to the comparison result.
In some embodiments, determining the failure type of the chip failure point according to the comparison result includes:
determining the failure type to be one or more of hot carrier injection effect, gate oxide defect, tunnel breakdown under PN junction reverse bias voltage and avalanche breakdown under PN junction reverse bias voltage when the wavelength information of the chip failure point is less than the wavelength of direct transition radiation;
when the wavelength information of the chip failure point is the same as or close to the wavelength of the direct transition radiation light, determining the failure type to comprise one or more of PN positive bias and latch-up effect of the CMOS device;
and determining the failure type as an unknown failure type when the wavelength information of the failure point of the chip is greater than the wavelength of the emission light of the direct transition radiation light wavelength.
By collecting wavelength information and other information of chip failure points with unknown failure types, the method is beneficial to expanding a failure library and perfecting a failure type judgment method and means.
Obtaining the wavelength of the substrate material such as silicon material direct transition radiation comprises: according to the forbidden bandwidth of silicon material as 1.12eV, according to the formula:
The wavelength lambda of the silicon material direct transition radiation light is approximately equal to 1100 nm.
The third generation wide bandgap semiconductor SiC, GaN, etc. has a bandgap width of about 3.2eV, and the larger the bandgap width is, the higher the transition energy is, and the shorter the corresponding wavelength is, and when Eg is 3.2eV, the wavelength λ is about 387 nm. Therefore, the wavelength of the silicon material direct transition radiation light is about 1100nm, and the wavelength of the third generation semiconductor direct transition radiation light is about 387 nm.
Taking a chip with a Si substrate as an example, after an electric field is applied to the chip, the types of failures are generally classified into three types according to the transition energy Ee, with 1100nm as a boundary:
(1) the wavelength of the emitted light ranges from visible light to near infrared, namely lambda is less than 1100nm, and the failure type can be hot carrier injection effect, gate oxide defects, tunnel breakdown under PN junction reverse bias voltage or avalanche breakdown.
(2) The emitted light wavelength is near 1100nm and in the near infrared band, and the failure type may be PN positive bias and latch-up effect of CMOS device.
(3) The emitted light wavelength is larger than 1100nm, and is an unknown failure type, and relevant data needs to be collected.
As shown in fig. 6: the left column is a good product light radiation imaging graph, and the right column is a failed product light radiation imaging graph.
6-01 shows the superposition of the three wave band optical signal diagrams of good products and failed products, and the shapes of the three wave band optical signal diagrams are distinguished (corresponding to the actual color difference), and the lower right star of the failed products can be observed as an abnormal luminous point.
6-02, 6-03 and 6-04 are optical signal diagrams which are imaged independently under three wave bands, and three wave band imaging diagrams of 900nm-1000nm, 1050nm-1150nm and 1200nm-1600nm are sequentially arranged.
At this time, the wavelength of the luminescent point is found to be within the range of 900-1000nm when the abnormal luminescent point is found in 6-02 in fig. 6, that is, the failure mode may be hot carrier injection, gate oxide defect or PN junction reverse bias leakage, after the position and wavelength information corresponding to the abnormal luminescent point is obtained, the failure type and other analysis information such as failure background, optical morphology observation, electrical failure characteristics and the like are combined, which is helpful for an analyst to comprehensively identify the failure mode.
In the embodiment, the failure type of the chip failure point is analyzed, and the chip failure root is judged timely and quickly, so that corresponding risk identification and improvement measures are taken.
Fig. 7 is a functional structure diagram of a chip fail point positioning apparatus according to an embodiment of the present application, and as shown in fig. 7, the chip fail point positioning apparatus includes:
the acquisition module 71 is configured to acquire an optical signal emitted after the chip is powered on;
a separation module 72, configured to separate the optical signals and output a plurality of optical radiation images with specific wavelength bands;
and the positioning module 73 is used for comparing the optical radiation images of the specific wave bands with the structural topography of the pre-set good chip to determine the wavelength information of the failure point of the chip.
In some embodiments, further comprising:
a dyeing module 74, configured to establish a corresponding relationship between a specific waveband and a color, and dye a plurality of light radiation images of the specific waveband including information of a specific waveband range into a light radiation color image of the corresponding color according to the corresponding relationship;
and a superposition module 75, configured to superpose the light radiation color images of different colors to obtain a light radiation complete color image.
And a failure analysis module 76 for analyzing the failure type of the chip failure point.
In the embodiment, the optical signal emitted after the chip is powered on is acquired through the acquisition module, the separation module separates the optical signal and outputs the optical radiation images of a plurality of specific wave bands, the positioning module compares the optical radiation images of the specific wave bands with the structural morphology diagram of the preset good chip to determine the wavelength information of the failure point of the chip, the detection and analysis of the wavelength of the failure point of the semiconductor chip can be realized, no new failure is introduced to the chip in the analysis process, the efficiency and the accuracy of the failure analysis of the semiconductor chip are improved, and the method can be widely applied to testing links of chip design and production, after-sale problem feedback and other links.
Fig. 8 is a functional structure diagram of a chip fail point positioning system according to an embodiment of the present application, and as shown in fig. 8, the chip fail point positioning system includes:
the chip fail point positioning device 81, the filter 82, and the microscope 83 as described in the above embodiments;
the chip fail point positioning device 81 is connected to the filter 82 and the microscope 83, respectively.
In some embodiments, the microscope is an optical radiation microscope and the filtering means is one or more of a filter, a wavelength selectable interferometer, and a grating beam splitting lens group.
In this embodiment, the chip failure point positioning device is connected to the optical filtering device and the microscope 83, so as to implement processing such as two-dimensional optical signal filtering selection, optical signal conversion into electrical signal imaging, dyeing superposition, etc., output a color image carrying wavelength information, and facilitate chip failure point analysis.
It is understood that the same or similar parts in the above embodiments may be mutually referred to, and the same or similar parts in other embodiments may be referred to for the content which is not described in detail in some embodiments.
It should be noted that, in the description of the present application, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Further, in the description of the present application, the meaning of "a plurality" means at least two unless otherwise specified.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
It should be noted that the present invention is not limited to the above-mentioned preferred embodiments, and those skilled in the art can obtain other products in various forms without departing from the spirit of the present invention, but any changes in shape or structure can be made within the scope of the present invention with the same or similar technical solutions as those of the present invention.
Claims (20)
1. A chip failure point positioning method is characterized by comprising the following steps:
acquiring an optical signal emitted by the chip after being electrified;
separating the optical signals and outputting a plurality of optical radiation images with specific wave bands;
comparing the optical radiation images of the specific wave bands with a structural topography of a preset good chip to determine wavelength information of a chip failure point;
further comprising:
analyzing the failure type of the failure point of the chip; the analyzing the failure type of the chip failure point comprises the following steps:
obtaining the direct transition radiation optical wavelength of a substrate material;
comparing the wavelength information of the chip failure point with the wavelength of the direct transition radiation light;
and determining the failure type of the chip failure point according to the comparison result.
2. The method of claim 1, wherein the separating the optical signal comprises:
and selectively filtering the optical signals to output a plurality of specific waveband optical signals and specific waveband range information corresponding to the specific waveband optical signals.
3. The method of claim 1, wherein the outputting the plurality of optical radiation images of specific wavelength bands comprises:
inputting the plurality of specific wave band optical signals into an optical radiation microscope to generate a plurality of specific wave band optical radiation images;
and splicing the plurality of optical radiation images of the specific wave bands with the specific wave band range information to output a plurality of optical radiation images of the specific wave bands comprising the specific wave band range information.
4. The method of claim 3, wherein the step of outputting the plurality of band-specific light radiation images including band-specific range information further comprises:
establishing a corresponding relation between a specific wave band and colors;
according to the corresponding relation, dyeing a plurality of light radiation images with specific wave bands including specific wave band range information into light radiation color images with corresponding colors;
and superposing the light radiation color images with different colors to obtain a light radiation complete color image.
5. The method of claim 4, wherein the comparing the optical signals with multiple wavelengths with a pre-determined good chip structure profile to determine the wavelength information of the chip failure point comprises:
comparing the light radiation complete color image with a preset good chip structure profile map;
determining color information of a failure point in the light radiation complete color image according to the comparison result;
and determining the wavelength information of the chip failure point according to the failure point color information.
6. The method of claim 5, further comprising:
determining the position information of the failure point in the complete light radiation color image according to the comparison result;
and determining the position of the chip failure point according to the failure point position information.
7. The method of claim 2, wherein the selectively filtering the optical signal to output a plurality of optical signals of specific wavelength bands comprises:
inputting the optical signals into optical filters with different wave bands to obtain a plurality of optical signals with specific wave bands;
and/or the presence of a gas in the gas,
inputting the optical signals into an interferometer with selectable wavelengths to obtain a plurality of optical signals with specific wave bands;
and/or the presence of a gas in the gas,
and inputting the optical signal into a grating light splitting lens group to obtain a plurality of optical signals with specific wave bands.
8. The method of claim 2, wherein the specific band range comprises: 900nm-1000nm wide wavelength band, 1050nm-1150nm wide wavelength band and 1200nm-1600nm wide wavelength band.
9. The method of claim 2, wherein the specific band range comprises: and a plurality of narrow wavelength bands are uniformly divided into the 900nm-1600nm wave bands according to preset intervals.
10. The method of claim 9, wherein the predetermined interval is a 10nm interval.
11. The method of claim 4, wherein the optical radiation microscope comprises:
a detector for a plurality of wavelength ranges.
12. The method as claimed in claim 11, wherein the step of coloring the light radiation images of a plurality of specific wavelength bands including the information of specific wavelength band ranges into color light radiation images of corresponding colors according to the correspondence comprises:
projecting the light radiation images of a plurality of specific wave bands to a visible light wave band according to the specific proportion to output the light radiation images of a plurality of visible light wave bands;
and dyeing the light radiation images of the plurality of visible light wave bands to generate light radiation color images of the visible light wave bands with different colors.
13. The method of claim 12, further comprising:
respectively acquiring the wave band width of a detector and the wave band width of visible light;
and taking the ratio of the detector wave band width and the visible light wave band width as the specific ratio.
14. The method of claim 13, wherein the obtaining a detector band width comprises:
and acquiring the width of a photosensitive range of the detector, and determining the width of a detector wave band according to the width of the photosensitive range of the detector.
15. The method of claim 13, wherein the obtaining the visible light band width comprises:
and acquiring the width of a visible light range, and determining the width of a visible light wave band according to the width of the visible light range.
16. The method of claim 1, wherein the determining the failure type of the chip failure point according to the comparison result comprises:
determining the failure type to be one or more of hot carrier injection effect, gate oxide defect, tunnel breakdown under PN junction reverse bias voltage and avalanche breakdown under PN junction reverse bias voltage when the wavelength information of the chip failure point is less than the wavelength of direct transition radiation;
when the wavelength information of the chip failure point is the same as or close to the wavelength of the direct transition radiation light, determining the failure type to comprise one or more of PN positive bias and latch-up effect of the CMOS device;
and determining the failure type as an unknown failure type when the wavelength information of the failure point of the chip is greater than the wavelength of the emission light of the direct transition radiation light wavelength.
17. A chip failure point positioning device, comprising:
the acquisition module is used for acquiring an optical signal emitted by the chip after being electrified;
the separation module is used for separating the optical signals and outputting a plurality of optical radiation images with specific wave bands;
the positioning module is used for comparing the optical radiation images of the specific wave bands with a structural topography of a preset good chip to determine wavelength information of a failure point of the chip;
further comprising:
the failure analysis module is used for analyzing the failure types of the chip failure points, and the analyzing the failure types of the chip failure points comprises the following steps: obtaining the direct transition radiation optical wavelength of a substrate material; comparing the wavelength information of the chip failure point with the wavelength of the direct transition radiation light; and determining the failure type of the chip failure point according to the comparison result.
18. A system for locating a point of failure of a chip, comprising:
the chip fail point positioning device, the optical filtering device and the microscope of claim 17;
the chip failure point positioning device is respectively connected with the light filtering device and the microscope.
19. The chip fail point locating system of claim 18, wherein the microscope is an optical radiation microscope.
20. The chip fail point locating system of claim 18, wherein the filter device is one or more of a filter, a wavelength selectable interferometer, and a grating beam splitting lens set.
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| CN101576565B (en) * | 2008-05-09 | 2013-07-10 | 上海华碧检测技术有限公司 | Location test system for defects of integrated circuit |
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| CN109342920A (en) * | 2018-09-30 | 2019-02-15 | 上海华力集成电路制造有限公司 | IC chip failure independent positioning method |
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