CN112366658A - IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method - Google Patents
IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method Download PDFInfo
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- CN112366658A CN112366658A CN202011275120.4A CN202011275120A CN112366658A CN 112366658 A CN112366658 A CN 112366658A CN 202011275120 A CN202011275120 A CN 202011275120A CN 112366658 A CN112366658 A CN 112366658A
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- 238000012544 monitoring process Methods 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims description 14
- 230000000087 stabilizing effect Effects 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005184 irreversible process Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1203—Circuits independent of the type of conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/10—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current additionally responsive to some other abnormal electrical conditions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
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Abstract
The invention discloses an IGBT (insulated gate bipolar transistor) overcurrent and overvoltage protection circuit and an IGBT overcurrent and overvoltage protection method, wherein the IGBT overcurrent and overvoltage protection circuit comprises an IGBT, an overcurrent protection circuit, a gate drive circuit and an overvoltage protection circuit; the over-current protection circuit is used for monitoring the V of the IGBTCEVoltage drop at saturation, when V of the IGBTCEWhen the saturation voltage drop voltage exceeds a set threshold value, an overcurrent signal is transmitted to the control panel, and when the control panel receives a fault signal, the gate drive circuit is controlled to turn off the IGBT; the overvoltage protection circuit is used for monitoring the voltage of a collector electrode of the IGBT, when the voltage of the collector electrode of the IGBT exceeds a set threshold value, an overvoltage signal can be transmitted to the control board, and when the control board receives a fault signal, the gate drive circuit can be controlled to turn off the IGBT. The circuitThe IGBT overcurrent and overvoltage protection circuit is simple in structure and small in driving current, greatly shortens response time of IGBT overcurrent and overvoltage protection, and protects an IGBT module more timely so as to improve reliability of a system.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to an IGBT overcurrent and overcurrent protection circuit and an IGBT overcurrent and overvoltage protection method.
Background
Insulated Gate Bipolar Transistor (IGBT)Is the most important component in the power electronic system nowadays, and is widely applied to various power level applications from hundreds of volts to thousands of volts. During the lifetime of an IGBT, different extreme operating conditions may occur due to control unit failures, human error, or other uncontrollable factors. One of the most common cases of IGBTs is a short circuit. To avoid damage to the equipment and even the power system, short circuits of the IGBTs should be detected and turned off within a few microseconds. Because the overcurrent that the IGBT can bear is limited, the overcurrent protection should be fast and accurate. The IGBT is in the saturation region during its normal operation, the voltage drop V between collector and emitterCEVery small (about 2V). When short circuit occurs, the current value quickly reaches 4-8 times of rated current, VCERises rapidly and then exits the saturation region. This process is called desaturation. If the IGBT is not closed in time, VCEMay rise to the bus voltage value and cause irreversible damage to the IGBTs. Thus, can be based on VCEThe operating state of the IGBT is judged according to the voltage value of the IGBT. Still another common situation is the overvoltage of the IGBT, which overvoltage can lead to the electrical breakdown of the internal structure of the IGBT, which can lead to the thermal breakdown of the IGBT for a long time, which can break down the internal physical structure of the IGBT, which is an irreversible process, and the IGBT can fail due to the thermal breakdown. Therefore, the IGBT can be prevented from being subjected to an excessive voltage by monitoring the collector voltage of the IGBT.
The overcurrent detection method of the IGBT comprises current sensor detection, di/dt detection and VCESaturated pressure drop detection, etc. The current sensor mainly adopts a closed-loop Hall current sensor for sampling. However, the real-time performance is to be improved due to the limitations of the hall sensor bandwidth and the delay of the sampling circuit of the control system. The di/dt detection mainly utilizes parasitic inductance of a power E pole and a driving E pole of the IGBT to judge the magnitude of current, but the inductance parameter is not easy to obtain. Therefore, V is proposedCEThe IGBT over-current protection circuit for monitoring the saturation voltage drop monitors the short circuit condition of the IGBT in real time, and avoids damage to the IGBT caused by long-time over-current. Meanwhile, the IGBT overvoltage protection circuit is provided for monitoring the overvoltage condition of the IGBT in real time, and the IGBT overvoltage protection circuit and the overcurrent protection circuit carry out double protection on the IGBT together, so that the IGBT is prevented from being out of work.
Disclosure of Invention
The invention aims to provide an IGBT over-current and over-voltage protection circuit and an IGBT over-current and over-voltage protection method, wherein the over-current protection circuit can accurately monitor the saturation voltage drop V of the IGBTCEAnd passes through the set threshold value and the saturation pressure drop VCEBy comparison, when the saturated pressure drop V isCEAnd when the set threshold value is exceeded, the IGBT is controlled to be turned off, so that the long-time overcurrent of the IGBT is avoided. The overvoltage protection circuit can monitor the collector voltage of the IGBT, when the collector voltage of the IGBT exceeds the reverse breakdown voltage of the TVS diode, an overvoltage signal can be sent to the control board, and the control board can control the IGBT to be turned off, so that the IGBT is prevented from bearing overlarge voltage.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention discloses an IGBT overcurrent and overvoltage protection circuit, which comprises an overcurrent protection circuit, a gate drive circuit and an overvoltage protection circuit, wherein the overcurrent protection circuit comprises a first resistor, a second resistor and a first resistor; the over-current protection circuit is used for monitoring the V of the IGBTCEVoltage drop at saturation, when V of the IGBTCEWhen the saturation voltage drop voltage exceeds a set threshold value, an overcurrent signal is transmitted to the control panel, and when the control panel receives a fault signal, the gate drive circuit is controlled to turn off the IGBT; the overvoltage protection circuit is used for monitoring the voltage of a collector electrode of the IGBT, when the voltage of the collector electrode of the IGBT exceeds a set threshold value, an overvoltage signal can be transmitted to the control board, and when the control board receives a fault signal, the gate drive circuit can be controlled to turn off the IGBT.
Preferably, the overcurrent protection circuit comprises a voltage feedback circuit, the voltage feedback circuit comprises a controllable current source of 250uA, a first resistor and a first high-voltage diode which are sequentially connected in series, and the controllable current source is VCEDetecting the supply current; the cathode of the first high-voltage diode is connected with the IGBT collector electrode, and a node between the first resistor and the first high-voltage diode is connected with the first capacitor and grounded; and a node between the controllable current source and the first resistor is connected with the negative input end of the voltage comparator and used for comparing feedback voltage.
Preferably, the overcurrent protection circuit further comprises a first MOS transistor, and a drain of the first MOS transistor is connected to the negative input terminal of the voltage comparator.
Preferably, the gate of the first MOS transistor is connected to the output end of the not gate, the input end of the not gate is connected to the gate driving circuit, and the first MOS transistor and the not gate form a clamping circuit; the second variable resistor, the third resistor and the variable power supply are used for setting adjustable threshold voltage, and a middle node of the second variable resistor and the third resistor which are connected in series is connected with the positive input end of the voltage comparator; the second capacitor is connected with the second variable resistor in parallel and used for stabilizing the adjustable threshold voltage, and the third capacitor and the fourth capacitor are connected between the variable power supply and the ground in parallel and used for filtering noise waves of the variable power supply.
Preferably, the gate driving circuit comprises a gate driver, a gate clamping circuit and a gate driving resistor, wherein the gate driver, the gate clamping circuit and the gate driving resistor are composed of an isolation transformer, a second MOS transistor and a third MOS transistor; the grid clamping circuit comprises a fifth voltage stabilizing diode and a sixth voltage stabilizing diode, and the fifth voltage stabilizing diode is reversely connected with the sixth voltage stabilizing diode in series and is connected with the gate electrode-emitter in parallel.
Preferably, the overvoltage protection circuit comprises a second TVS diode, an RCD absorption circuit, a fourth diode, a fifth resistor and a sixth resistor, wherein a cathode of the second TVS diode is connected to a collector of the IGBT, and an anode of the second TVS diode is connected to the RCD absorption circuit and a cathode of the fifth resistor; the RCD absorption circuit consists of a third diode, a fifth capacitor and a fourth resistor; the sixth resistor and the fifth resistor are connected in series and are grounded, the fourth diode and the third diode are connected in series, the anode of the fourth diode is connected with the anode of the gate driving resistor of the gate driving circuit, and the cathode of the fourth diode is connected with the variable power supply; and the over-current signal and the over-voltage signal are transmitted to the control panel through the OR gate.
The invention also discloses an IGBT overcurrent protection method, which comprises the following steps:
the over-current protection circuit is used for monitoring the V of the IGBTCEThe overvoltage protection circuit is used for monitoring the voltage of a collector of the IGBT;
when V of the IGBTCEWhen the voltage of the IGBT exceeds a set threshold value, the overcurrent protection circuit detects that the IGBT is in overcurrent and outputs a fault signal to the control board; when the control board receives a fault signal, the gate drive circuit is controlled to output a low level to the gate of the IGBT, so that the IGBT is turned off to avoid long-time overcurrent of the IGBT, and the effect of protecting the IGBT is achieved;
when the voltage of the collector of the IGBT exceeds a set threshold value, the overcurrent protection circuit detects the overvoltage of the IGBT and outputs a fault signal to a control board; when the control board receives a fault signal, the gate driving circuit is controlled to output a low level to the gate of the IGBT, so that the IGBT is turned off to avoid the IGBT from bearing excessive voltage, and the effect of protecting the IGBT is also achieved.
Compared with the prior art, the invention has the following beneficial effects:
the invention designs an IGBT over-current and over-voltage protection circuit and an IGBT over-current and over-voltage protection method, when the saturation voltage drop V is reachedCEWhen the set threshold value is exceeded, the control board can control the IGBT to be turned off, so that the long-time overcurrent of the IGBT is avoided; when the collector voltage of the IGBT exceeds the reverse breakdown voltage of the TVS diode, an overvoltage signal can be sent to the control board, and the control board can control the IGBT to be turned off, so that the IGBT is prevented from bearing excessive voltage, and the effect of protecting the IGBT is achieved. Compared with current sensor detection and di/dt detection, the circuit is simple in structure and small in driving current, greatly shortens response time of IGBT overcurrent protection, protects the IGBT more timely, and monitors overvoltage conditions of the IGBT in real time to improve reliability of the system.
Drawings
A more complete appreciation of the invention and many of the attendant advantages thereof will be readily obtained as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings, wherein the accompanying drawings are included to provide a further understanding of the invention and form a part of this specification, and the illustrated embodiments and descriptions thereof are intended to illustrate and not limit the invention.
Fig. 1 shows an IGBT overcurrent and overvoltage protection circuit.
Detailed Description
The invention will be further described with reference to the accompanying drawings in which:
as shown in fig. 1, the IGBT overcurrent and overvoltage protection circuit according to the preferred embodiment of the present invention includes an overcurrent protection circuit, a gate drive circuit, and an overvoltage protection circuit; the over-current protection circuit is used for monitoring the V of the IGBTCEVoltage drop at saturation, when V of the IGBTCEWhen the saturation voltage drop voltage exceeds a set threshold value, an overcurrent signal is transmitted to the control panel, and when the control panel receives a fault signal, the gate drive circuit is controlled to turn off the IGBT; the overvoltage protection circuit is used for monitoring the voltage of a collector electrode of the IGBT, when the voltage of the collector electrode of the IGBT exceeds a set threshold value, an overvoltage signal can be transmitted to the control board, and when the control board receives a fault signal, the gate drive circuit can be controlled to turn off the IGBT.
Preferably, the overcurrent protection circuit comprises a voltage feedback circuit, and the voltage feedback circuit comprises a controllable current source I and a first resistor R which are sequentially connected in series and 250uA1And a first high voltage diode D1The controllable current source I is VCEDetecting the supply current; the first high voltage diode D1Is connected with the IGBT collector electrode, the first resistor R1And a first high voltage diode D1Node between and the first capacitance C1Are connected and grounded; the controllable current source I and the first resistor R1Node in between and voltage comparator U1The negative input end is connected for comparing the feedback voltage.
Preferably, the overcurrent protection circuit further includes a first MOS transistor Q1The first MOS transistor Q1And the voltage comparator U1The negative input ends are connected.
Preferably, the first MOS transistor Q1And the gate of the inverter U2Is transported byThe output end is connected with the NOT gate U2The input end of the first MOS transistor Q is connected with the gate pole driving circuit1And the NOT gate U2Forming a clamping circuit; the second variable resistor R2A third resistor R3And a variable power supply VCC for setting an adjustable threshold voltage, a second variable resistor R connected in series2And a third resistor R3An intermediate node and the voltage comparator U1The positive input ends are connected; the second capacitor C2And a second variable resistor R2In parallel for stabilizing an adjustable threshold voltage, the third capacitor C3And a fourth capacitor C4And the filter circuit is connected between the variable power supply VCC and the ground in parallel and is used for filtering noise waves of the variable power supply.
Preferably, the gate driving circuit comprises an isolation transformer, a second MOS transistor Q and a third MOS transistor Q2Q3Composed gate drive, gate clamp circuit and gate drive resistor RgSaid gate drive and said gate drive resistor RgConnected in series with the IGBT gate pole, the gate drive input end is connected with the NOT gate U2The input ends are connected; the grid clamping circuit comprises a fifth voltage stabilizing diode D5And a sixth zener diode D6Said fifth zener diode D5And the sixth zener diode D6In anti-series and in parallel with the gate-emitter.
Preferably, the overvoltage protection circuit comprises a second TVS diode D2RCD absorption circuit, fourth diode D4And fifth and sixth resistors R5R6The second TVS diode D2Is connected with the collector of the IGBT, the second TVS diode D2Positive electrode and RCD absorption circuit and fifth resistor R5The negative electrodes are connected; the RCD absorption circuit is composed of a third triode D3A fifth capacitor C5And a fourth resistor R4Composition is carried out; the sixth resistor R6And a fifth resistor R5Connected in series and grounded, the fourth diode D4And a third diode D3In series, the fourth diode D4The gate driving resistor R of the positive and gate driving circuitgPositive electrode of (2)Connected, the fourth diode D4The negative electrode of the power supply is connected with a variable power supply VCC; and the over-current signal and the over-voltage signal are transmitted to the control panel through the OR gate.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
Claims (6)
1. An IGBT over-current and over-voltage protection circuit comprises a driving module and an IGBT, wherein the driving module is connected with an IGBT gate pole; the over-current protection circuit is used for monitoring the V of the IGBTCEVoltage drop at saturation, when V of the IGBTCEWhen the saturation voltage drop voltage exceeds a set threshold value, an overcurrent signal is transmitted to the control panel, and when the control panel receives a fault signal, the gate drive circuit is controlled to turn off the IGBT; the overvoltage protection circuit is used for monitoring the voltage of a collector electrode of the IGBT, when the voltage of the collector electrode of the IGBT exceeds a set threshold value, an overvoltage signal can be transmitted to the control board, and when the control board receives a fault signal, the gate drive circuit can be controlled to turn off the IGBT.
2. The overcurrent protection circuit of claim 1, wherein the overcurrent protection circuit comprises a voltage feedback circuit comprising a controllable current source of 250uA, a first resistor and a first high voltage diode connected in series in sequence, and the controllable current source is VCEDetecting the supply current; the cathode of the first high-voltage diode is connected with the IGBT collector electrode, and a node between the first resistor and the first high-voltage diode is connected with the first capacitor and grounded; a node between the controllable current source and the first resistor is connected with a negative input end of a voltage comparator and used for comparing feedback voltage; the overcurrent protection circuit further comprises a first MOS tube, and the drain electrode of the first MOS tube is connected with the drain electrode of the first MOS tubeThe negative input end of the voltage comparator is connected.
3. The overcurrent protection circuit of claim 1, wherein a gate of the first MOS transistor is connected to an output of the not gate, an input of the not gate is connected to the gate driver circuit, and the first MOS transistor and the not gate form a clamp circuit; the second variable resistor, the third resistor and the variable power supply are used for setting adjustable threshold voltage, and a middle node of the second variable resistor and the third resistor which are connected in series is connected with the positive input end of the voltage comparator; the second capacitor is connected with the second variable resistor in parallel and used for stabilizing the adjustable threshold voltage, and the third capacitor and the fourth capacitor are connected between the variable power supply and the ground in parallel and used for filtering noise waves of the variable power supply.
4. The gate drive circuit of claim 4, comprising an isolation transformer, a gate drive comprising second and third MOS transistors, a gate clamp circuit, and a gate drive resistor, wherein the gate drive is connected in series with the gate drive resistor and to the IGBT gate, and wherein the gate drive input is connected to the NOT gate input; the grid clamping circuit comprises a fifth voltage stabilizing diode and a sixth voltage stabilizing diode, and the fifth voltage stabilizing diode is reversely connected with the sixth voltage stabilizing diode in series and is connected with the gate electrode-emitter in parallel.
5. The overvoltage protection circuit according to claim 1, wherein the overvoltage protection circuit comprises a second TVS diode, an RCD snubber circuit, a fourth diode, and fifth and sixth resistors, a cathode of the second TVS diode is connected to a collector of the IGBT, and an anode of the second TVS diode is connected to cathodes of the RCD snubber circuit and the fifth resistor; the RCD absorption circuit consists of a third diode, a fifth capacitor and a fourth resistor; the sixth resistor and the fifth resistor are connected in series and are grounded, the fourth diode and the third diode are connected in series, the anode of the fourth diode is connected with the anode of the gate pole resistor of the gate pole driving circuit, and the cathode of the fourth diode is connected with the variable power supply; and the over-current signal and the over-voltage signal are transmitted to the control panel through the OR gate.
6. An overcurrent and overvoltage protection method is characterized by comprising the following steps:
the over-current protection circuit is used for monitoring the V of the IGBTCEThe overvoltage protection circuit is used for monitoring the voltage of a collector of the IGBT;
when V of the IGBTCEWhen the voltage of the IGBT exceeds a set threshold value, the overcurrent protection circuit detects that the IGBT is in overcurrent and outputs a fault signal to the control board; when the control board receives a fault signal, the gate drive circuit is controlled to output a low level to the gate of the IGBT, so that the IGBT is turned off to avoid long-time overcurrent of the IGBT, and the effect of protecting the IGBT is achieved;
when the voltage of the collector of the IGBT exceeds a set threshold value, the overcurrent protection circuit detects the overvoltage of the IGBT and outputs a fault signal to a control board; when the control board receives a fault signal, the gate driving circuit is controlled to output a low level to the gate of the IGBT, so that the IGBT is turned off to avoid the IGBT from bearing excessive voltage, and the effect of protecting the IGBT is also achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011275120.4A CN112366658A (en) | 2020-11-16 | 2020-11-16 | IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011275120.4A CN112366658A (en) | 2020-11-16 | 2020-11-16 | IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method |
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| CN112366658A true CN112366658A (en) | 2021-02-12 |
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| CN202011275120.4A Pending CN112366658A (en) | 2020-11-16 | 2020-11-16 | IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193736A (en) * | 2021-05-07 | 2021-07-30 | 深圳市三行技术有限公司 | Topological structure of medium-voltage variable-frequency brake unit and voltage reduction method of bus thereof |
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2020
- 2020-11-16 CN CN202011275120.4A patent/CN112366658A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193736A (en) * | 2021-05-07 | 2021-07-30 | 深圳市三行技术有限公司 | Topological structure of medium-voltage variable-frequency brake unit and voltage reduction method of bus thereof |
| CN113193736B (en) * | 2021-05-07 | 2023-07-11 | 深圳市三行技术有限公司 | Medium-voltage variable-frequency brake unit topological structure and voltage reduction method of bus thereof |
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