CN112362171A - Equivalent circuit model of microbolometer - Google Patents
Equivalent circuit model of microbolometer Download PDFInfo
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- CN112362171A CN112362171A CN202011193180.1A CN202011193180A CN112362171A CN 112362171 A CN112362171 A CN 112362171A CN 202011193180 A CN202011193180 A CN 202011193180A CN 112362171 A CN112362171 A CN 112362171A
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- 239000000758 substrate Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004088 simulation Methods 0.000 abstract description 8
- 238000011161 development Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 4
- 230000005676 thermoelectric effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000003331 infrared imaging Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Embodiments of the present invention provide an equivalent circuit model of a microbolometer. The model comprises: micro-bolometer resistance model (10), micro-bolometer resistance model (10) is including connecting resistance (Rconn) and sensitive resistance (r), and micro-bolometer temperature change circuit (20), micro-bolometer temperature change circuit (20) is used for simulating temperature rise (theta) along with joule heat (Q), net incident power (P1), thermal conductance (Gth) and the change of heat capacity (Cth), through temperature rise (theta) can obtain sensitive resistance (r). Through the equivalent circuit model, the thermoelectric effect of the microbolometer can be subjected to high-precision simulation in read-out circuit (ROIC) design software, so that the accuracy of the read-out circuit design is ensured, and the development time and cost are saved.
Description
Technical Field
The invention relates to an infrared imaging technology, in particular to an uncooled infrared focal plane array reading circuit in the infrared imaging technology.
Background
This section is intended to provide a background or context to the embodiments of the invention that are recited in the claims. The description herein is not admitted to be prior art by inclusion in this section.
At present, the uncooled infrared imaging technology has important application in the fields of military, industry and agriculture, medicine, astronomy and the like. The infrared focal plane array as the core of the uncooled infrared imaging technology comprises an infrared detector array and a reading circuit. The microbolometer Focal Plane Array (FPA) has high sensitivity, is an uncooled infrared focal plane array which is most widely applied, and has the working principle that the temperature changes after a thermosensitive material absorbs incident infrared radiation, so that the resistance value of the thermosensitive material changes, and the size of an infrared radiation signal is detected by measuring the change of the resistance value.
Microbolometers are resistance type thermal sensors, and cantilever micro-bridge structures manufactured by micromachining technology are generally adopted. The bridge deck is deposited with a layer of thermosensitive material with high Temperature Coefficient of Resistance (TCR), and is supported by two legs with good mechanical properties and plated with conductive material, the contact points of the legs and the substrate are piers, which are electrically connected to a silicon readout circuit (ROIC) under a microbolometer. The thermally sensitive material is connected to the electrical path of the read-out circuit via bridge legs and piers, forming a pixel cell which is temperature sensitive and connected to the read-out circuit.
The read circuit is used for processing and reading signals of the microbolometer (hereinafter referred to as a pixel for short), and the design and simulation accuracy of the read circuit have an important influence on the success or failure of the detector development, so that the accurate simulation modeling of the thermal and electrical effects of the microbolometer is an important work of the detector development. In the prior art, when the change of the resistance value of the microbolometer is measured, because a temperature rise measurement model is not used in simulation, the temperature rise is often ignored, and the equivalent circuit model of the microbolometer is designed, so that the temperature rise can be calculated according to the equivalent circuit model, and the thermal and electrical effects of the microbolometer can be more accurately described.
Disclosure of Invention
The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. It should be understood that this summary is not an exhaustive overview of the invention. It is not intended to determine the key or critical elements of the present invention, nor is it intended to limit the scope of the present invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
The invention solves the technical problem that a plurality of equivalent circuit models are provided for accurately describing the thermal and electrical effects of the microbolometer, and a reliable tool is provided for developing a reading circuit and a detector.
One aspect of the present invention provides an equivalent circuit model of a microbolometer, characterized in that the model includes: micro-bolometer resistance model (10), micro-bolometer resistance model (10) is including connecting resistance (Rconn) and sensitive resistance (r), and micro-bolometer temperature change circuit (20), micro-bolometer temperature change circuit (20) is used for simulating temperature rise (theta) along with joule heat (Q), net incident power (P1), thermal conductance (Gth) and the change of heat capacity (Cth), through temperature rise (theta) can obtain sensitive resistance (r).
Through the equivalent circuit model, the thermoelectric effect of the microbolometer can be simulated with high precision in read-out circuit (ROIC) design software, so that the accuracy of the read-out circuit design is ensured, and the development time and cost are saved.
These and other advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present invention will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:
fig. 1 schematically shows an equivalent circuit model of a microbolometer according to an embodiment of the present invention;
fig. 2 schematically shows an equivalent circuit model of a microbolometer according to another embodiment of the present invention;
fig. 3 schematically shows an equivalent circuit model of a microbolometer according to a further embodiment of the present invention;
fig. 4 schematically shows an equivalent circuit model of a microbolometer according to still another embodiment of the present invention;
FIG. 5 schematically illustrates a graph of microbolometer temperature over time, in accordance with an embodiment of the present invention;
fig. 6 schematically shows simulation output graphs of four equivalent circuit models of the microbolometer according to the embodiment of the present invention.
In the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
Detailed Description
Exemplary embodiments of the present invention will be described hereinafter with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features of an actual implementation are described in the specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the device structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
The principles and spirit of the present invention are explained in detail below with reference to several representative embodiments of the invention.
One aspect of the present invention provides an equivalent circuit model of a microbolometer, the equivalent circuit model including: the microbolometer resistance model 10, the microbolometer resistance model 10 includes connecting resistance Rconn and sensing resistor r, and microbolometer temperature change return circuit 20 is surveyed to the microbolometer, microbolometer temperature change return circuit 20 is used for simulating the change of temperature rise theta along with joule heat Q, net incident power P1, thermal conductance Gth and heat capacity Cth, through temperature rise theta can obtain sensing resistor r.
The following detailed description of embodiments of the invention, along with the accompanying drawings, will describe exemplary embodiments of the invention.
Fig. 1 is a schematic diagram of an equivalent circuit model of a microbolometer according to a first embodiment of the present invention. In a first embodiment, fig. 1 comprises essentially two parts, the first part being a microbolometer resistance model 10 and the second part being a microbolometer temperature change loop 20. The microbolometer resistance model 10 includes a connecting resistor RconnAnd a sensitive resistance r. The connecting resistor comprises a titanium resistor, a through hole resistor, a metal wiring resistor and the like, and the connecting resistor is not limited at the position. Since the TCR of the connecting resistor is relatively small, the TCR is a temperature coefficient of the resistor, and the size of the TCR is a part per million of the change of the resistance value of the connecting resistor caused by the change of every degree centigrade, and can be represented by a constant resistance value or a resistance value linearly changed along with the temperature. The sensitive resistor r is a main component in the resistor model 10, and is influenced by the substrate temperature Tsub and the temperature rise θ, and the expression of the sensitive resistor r is an exponential relation:
wherein R is300Is a resistance value at a substrate temperature of 300K (27 ℃), B is a constant determined by the normal temperature TCR, and if the normal temperature TCR is-0.022, the size of B is 1980 in K. The temperature rise θ is the difference between the pixel temperature Ts and the substrate temperature Tsub, i.e., θ — Tsub.
The temperature change circuit 20 is used for simulating the change of the temperature rise theta along with the joule heat and the target temperature, so as to obtain the size of the temperature rise theta. As shown in FIG. 1, the temperature changesThe conversion circuit 20 comprises two series voltage sources, the voltage source between the two series voltage sources and the ground being V1Is expressed in terms of its magnitude equivalent to representing the net incident power P1Induced temperature rise theta1Of another voltage source, V2Showing a magnitude equivalent to the temperature rise theta caused by the sensitive resistance due to joule heatJ0In a size of GthThe thermal conductance of which is equivalent to the electrical conductance, in magnitude CthThe thermal capacitance is equivalent to the capacitance, the thermal conductance and the hot melt are connected in series and are connected in series with the two voltage sources V1And V2And has a size of heat capacity CthIs connected to ground. Finally by outputting the value of the temperature rise theta at theta. Theta as defined aboveJ0Of size thetaJ0＝P2/GthIn which P is2UI is the voltage and current across a sensitive resistor in the actual circuit, θ1Is of size P1/GthNet incident power P1It is simplified as the difference between the target temperature Tt and the infrared power corresponding to the substrate temperature Tsub. And the expression for infrared power is:
wherein epsiloneIs the absorption rate, ApixIs the area of the pixel, FnIs the optical F number and L is the radiance. In the range-40 to 85 ℃, the radiance L may be approximated as:
L(T)＝0.00372T2-1.39T+138,......(3)
fig. 2 is an example of an equivalent circuit model of a second microbolometer provided by the present invention. In comparison with fig. 1, the temperature variation loop 21 of fig. 2 adds a controlled voltage source between the conductance and the capacitance, with a magnitude of αsubθ1Theta, wherein alphasubIs the TCR at the pixel temperature Tsub.
Fig. 3 is an example of an equivalent circuit model of a third microbolometer provided by the present invention. In comparison with FIG. 2, temperature change loop 22 of FIG. 3 adds a controlled voltage source between the conductance and the capacitance of the loop
That is, temperature change loop 22 adds a controlled voltage source between the conductance and capacitance of the temperature change loop 20 of FIG. 1, of the magnitude
Wherein
Representing the change rate of the pixel temperature along with the target temperature, wherein the expression is as follows:
fig. 4 is an example of an equivalent circuit model of a fourth microbolometer provided by the present invention. In comparison with FIG. 3, the temperature variation loop 23 of FIG. 4 adds a controlled voltage source between the conductance and the capacitance of the loop
Wherein theta istIs the difference between the target temperature and the substrate temperature.
As a specific example, the present invention is specifically described by taking an infrared focal plane array readout circuit with an array pixel pitch of 640 × 512 um as an example, but is not intended to limit the scope of the present invention.
As in the embodiment of fig. 1, to model the circuitry for the microbolometer, we need to give the differential equation for the pixel temperature Ts:
it is assumed here that joule heat is a constant independent of the pixel temperature Ts,
namely, the joule heat change caused by the pixel temperature rise theta is ignored. Thus, equation (5) can be simplified：
The current expression of the capacitor is
The model of FIG. 1 can be quickly obtained from equation (6), where two voltage sources are on the left side of the equation and the capacitor voltage and conductance G are on the right sidethSum of the pressure drops.
And if the change of the joule heat along with the pixel temperature is considered, the expression of the joule heat is as follows:
Vbsis the voltage drop of the sensitive picture element, i.e. V in the microbolometer resistance model 10CB. Correspondingly, the differential equation of the pixel temperature rise is as follows:
fig. 2 can also be obtained quickly from equation (8).
Still further, strictly speaking, the net incident radiation should be the difference between the infrared power corresponding to the target temperature Tt and the pixel temperature Ts, i.e.:
P11＝Pir(Tt)-Pir(Ts)＝β[L(Tt)-L(Ts)],......(9)
substituting equation (3) into equation (9) yields:
L(Ts)-L(Tt)＝(θ-θt)[0.00372(θ+θt+2Tsub)-1.39],......(10)
wherein theta ist＝Tt-TsubRepresenting the difference between the target temperature and the substrate temperature. For most applications, θ + θt<<2TsubThe above type letterThe method comprises the following steps:
L(Ts)-L(Tt)＝(θ-θt)(0.00744Tsub-1.39),......(11)
substituting equations (9) and (11) into the differential equation for pixel temperature rise can result in fig. 3, while substituting equation (9) and the unreduced equation (10) into the differential equation for pixel temperature rise can result in fig. 4.
Fig. 5 is a graph of the change of the microbolometer temperature with time according to the present invention, because for a certain pixel, within a frame time Tframe, the pixel is turned on for only one line time Tline, for example, the frame time is 20ms, and the line time is 50 us. That is, the picture elements are idle for most of the time and only operate for a very small fraction of the time that they are on. Accordingly, the pixel temperature rises approximately linearly during the on-time and decreases exponentially during the off-time. It can be seen that determining the change in temperature of the sensitive resistor is necessary and difficult,
fig. 6 is a comparison of simulation results of four equivalent circuit models of the microbolometer according to the present invention, specifically, data in the four equivalent circuit models are respectively input into a simulation instrument, and the results are generated by the simulation instrument. And the temperature rise curve obtained by the model 4 is basically consistent with the actual temperature rise curve, the models in the 1 st, the 2 nd and the 3 rd have certain errors, and the model precision is as follows: the invention can effectively improve the simulation precision by designing four different equivalent circuit models, greatly ensures the accuracy of reading circuit design and saves the development time and cost.
Claims (8)
1. An equivalent circuit model of a microbolometer, characterized in that it comprises:
a microbolometer resistance model (10), the microbolometer resistance model (10) comprising a connecting resistance (R)conn) And a sensitive resistance (r);
a microbolometer temperature change loop (20), the microbolometer temperature change loop (20) for simulating temperature rise (θ) with Joule heating (Q), net incident power (P1), thermal conductance (G)th) And heat capacity (C)th) Variations of (2)The sensitive resistance (r) can be obtained by the temperature rise (θ).
2. Equivalent circuit model of a microbolometer according to claim 1, characterized in that said connection resistance (R)conn) Including one or a combination of a titanium resistor, a via resistor, and a metal trace resistor.
3. Equivalent circuit model of a microbolometer according to claim 1, characterized in that said sensitive resistance (r) is influenced by the substrate temperature (Tsub) and by the temperature rise (θ), expressed as an exponential relationship
4. Equivalent circuit model of a microbolometer according to claim 3, characterized in that the temperature rise (θ) is the difference between the pixel temperature (Ts) and the substrate temperature (Tsub), R300Is the resistance at a substrate temperature of 27 degrees celsius, and B is a constant determined by the temperature coefficient of the room temperature resistor, and has the unit of K.
5. Equivalent circuit model of a microbolometer according to claim 1, characterized in that said temperature variation loop (20) comprises at least two voltage sources, one conductance and one capacitance;
the at least two voltage sources are connected in series, wherein one voltage source is used for temperature rise caused by net incident power, and the other voltage source is used for temperature rise caused by sensitive resistance caused by joule heat;
the at least two voltage sources are connected in series with the conductance and the capacitor, respectively.
6. Equivalent circuit model of a microbolometer according to claim 5, characterized in that the microbolometer temperature variation loop (20) further comprises two voltage sources, one conductance, one capacitance and one controlled voltage source;
the controlled voltage source is connected in series between the capacitor and the conductance and has a magnitude ofsubθ1θ。
7. Equivalent circuit model of a microbolometer according to claim 5, characterized in that the microbolometer temperature variation loop (20) further comprises two voltage sources, one conductance, one capacitance and two controlled voltage sources;
the two controlled voltage sources are connected in series and are connected in series between the capacitor and the conductance, and the magnitudes of the two controlled voltage sources are respectively alphasubθ1Theta and
8. equivalent circuit model of a microbolometer according to claim 5, characterized in that the microbolometer temperature variation loop (20) comprises also two voltage sources, one conductance, one capacitance and three controlled voltage sources;
the three controlled voltage sources are connected in series and are connected in series between the capacitor and the conductance, and the magnitude of each controlled voltage source is alphasubθ1θ、
And
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011193180.1A CN112362171B (en) | 2020-10-30 | Equivalent circuit model of micro-bolometer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011193180.1A CN112362171B (en) | 2020-10-30 | Equivalent circuit model of micro-bolometer |
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| CN112362171A true CN112362171A (en) | 2021-02-12 |
| CN112362171B CN112362171B (en) | 2024-06-04 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
| US20120119090A1 (en) * | 2010-11-12 | 2012-05-17 | Hynix Semiconductor Inc. | Readout integrated circuit for infrared signal and method of reading out infrared signal |
| US20130306851A1 (en) * | 2012-05-16 | 2013-11-21 | Institut National D'optique | Detection and correction of a loss of calibration of microbolometer thermal imaging radiometers |
| CN104251741A (en) * | 2014-09-18 | 2014-12-31 | 电子科技大学 | Self-adaptive infrared focal plane array readout circuit |
| CN104819779A (en) * | 2015-04-03 | 2015-08-05 | 无锡艾立德智能科技有限公司 | Micro-bolometer type infrared read-out circuit with bias thermo-compensation function |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
| US20120119090A1 (en) * | 2010-11-12 | 2012-05-17 | Hynix Semiconductor Inc. | Readout integrated circuit for infrared signal and method of reading out infrared signal |
| US20130306851A1 (en) * | 2012-05-16 | 2013-11-21 | Institut National D'optique | Detection and correction of a loss of calibration of microbolometer thermal imaging radiometers |
| CN104251741A (en) * | 2014-09-18 | 2014-12-31 | 电子科技大学 | Self-adaptive infrared focal plane array readout circuit |
| CN104819779A (en) * | 2015-04-03 | 2015-08-05 | 无锡艾立德智能科技有限公司 | Micro-bolometer type infrared read-out circuit with bias thermo-compensation function |
Non-Patent Citations (1)
| Title |
|---|
| 蔡泓: "微测辐射热计读出电路的研究", 万方数据库, pages 6 - 30 * |
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