CN112349860A - Light-emitting device, organic buffer packaging layer thereof and manufacturing method - Google Patents

Light-emitting device, organic buffer packaging layer thereof and manufacturing method Download PDF

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CN112349860A
CN112349860A CN201910979167.XA CN201910979167A CN112349860A CN 112349860 A CN112349860 A CN 112349860A CN 201910979167 A CN201910979167 A CN 201910979167A CN 112349860 A CN112349860 A CN 112349860A
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radio frequency
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buffer
mhz
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CN112349860B (en
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李松举
宋晶尧
付东
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Guangdong Juhua Printing Display Technology Co Ltd
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Guangdong Juhua Printing Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention relates to a light-emitting device, an organic buffer packaging layer and a manufacturing method thereof. Taking the change of the radio frequency power in the first buffer layer manufacturing process as an example, in the first stage, because the power is higher just before, the dissociation rate of the vaporized gas of the organic source is higher, and the vaporized gas is easier to be decomposed, and impurities, dust or non-target polymers formed by incomplete cracking or uneven polymerization of the organic source are not easy to generate in the formed film, and the main body part of the organic buffer packaging layer is formed in the second stage.

Description

Light-emitting device, organic buffer packaging layer thereof and manufacturing method
Technical Field
The invention relates to the field of light-emitting devices, in particular to a light-emitting device, an organic buffer packaging layer and a manufacturing method thereof.
Background
As the OLED production technology is mature, the OLED manufacturing cost is reduced gradually, and the OLED is a technology that can compete with the liquid crystal display. Also, the advantages of the OLED are gradually highlighted, wherein flexible display is the greatest feature thereof.
The flexible display technology is to replace the original two layers of glass substrates with a flexible substrate and a thin film packaging layer so as to realize the performance of bending and folding. Since the flexible display is often bent in practical use, it is desirable that the stress of the thin film encapsulation film layer is as small as possible when bending. On the other hand, since the OLED is sensitive to water vapor and is easily affected by water vapor to fail, the thin film package needs to have a strong water oxygen barrier capability (generally up to 10 f)-6g/cm2·day)。
In order to achieve the aim of simultaneously considering both the water oxygen barrier capability and the bending resistance capability, the prior scheme is that a laminated structure of an organic buffer packaging layer is clamped by two inorganic water oxygen barrier layers. However, when the organic buffer encapsulation layer is formed by the plasma enhanced chemical vapor deposition process, when the flow of the organic source is too large, or the ratio of the organic source to the reaction source is too large and the power is too small, impurity particles are easily generated, which are mainly products generated by incomplete cracking or uneven polymerization of the organic source, and the products exist in the interior and on the surface of the thin film, thereby affecting the encapsulation effect.
Disclosure of Invention
Accordingly, there is a need for a light emitting device, an organic buffer encapsulation layer thereof and a method for fabricating the same, so as to solve the problem that impurity particles are easily generated when the organic buffer encapsulation layer is formed by a plasma enhanced chemical vapor deposition process.
A manufacturing method of an organic buffer encapsulation layer of a light-emitting device comprises a first buffer layer and a second buffer layer covering the first buffer layer, and comprises the following steps:
forming the first buffer layer through a first stage by a plasma enhanced chemical vapor deposition process;
forming the second buffer layer on the first buffer layer through a second stage by a plasma enhanced chemical vapor deposition process;
in the first stage, the radio frequency power is gradually reduced, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power of the first stage; or
In the first stage, the radio frequency is gradually increased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage; or
In the first stage, the radio frequency duty ratio is gradually reduced, and in the second stage, the radio frequency duty ratio is not higher than the minimum radio frequency duty ratio in the first stage.
In one embodiment, in the first stage, the radio frequency power is gradually reduced from 9.0kW/m 2-9.4 kW/m2 to 7.0kW/m 2-7.4 kW/m2, and in the second stage, the radio frequency power is 4.7kW/m 2-6.2 kW/m 2; or
In the first stage, the radio frequency is gradually increased from 3.0 MHz-3.56 MHz to 11.0 MHz-12.0 MHz, and in the second stage, the radio frequency is 13.0 MHz-13.56 MHz; or
In the first stage, the radio frequency duty cycle is gradually reduced from 90% -100% to 40% -50%, and in the second stage, the radio frequency duty cycle is 30% -40%.
In one embodiment, the manufacturing method further includes:
forming a third buffer layer on the second buffer layer through a third stage by a plasma enhanced chemical vapor deposition process;
in the first stage, the radio frequency power is gradually reduced, in the third stage, the radio frequency power is gradually increased, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power in the first stage and the minimum radio frequency power in the third stage; or
In the first stage, the radio frequency is gradually increased, in the third stage, the radio frequency is gradually decreased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage and the maximum radio frequency in the third stage; or
In the first stage, the radio frequency duty ratio is gradually reduced, in the third stage, the radio frequency duty ratio is gradually increased, and in the second stage, the radio frequency duty ratio is not higher than the minimum radio frequency duty ratio in the first stage and the minimum radio frequency duty ratio in the third stage.
In one embodiment, during said third phase, the radio frequency power is from 7.0kW/m2～7.4kW/m2Gradually increased to 9.0kW/m2～9.4kW/m2(ii) a Or
In the third stage, the radio frequency is gradually reduced from 11.0 MHz-12.0 MHz to 3.0 MHz-3.56 MHz; or
In the third stage, the radio frequency duty ratio is gradually increased from 40% -50% to 90% -100%.
In one embodiment, the variation of the rf power, rf frequency or rf duty cycle is a stepwise gradual variation in the first phase.
In one embodiment, the material of the organic buffer encapsulation layer is selected from one or more of silicon oxycarbide, parylene, polypropylene, polystyrene, or polyimide.
In one embodiment, the first buffer layer has a thickness of 0.1 to 1 μm, the second buffer layer has a thickness of 1 to 5 μm, and the third buffer layer has a thickness of 0.1 to 1 μm.
A light emitting device, comprising:
a light emitting device main body including a substrate, a first electrode layer disposed on the substrate, a light emitting function layer disposed on the first electrode layer, and a second electrode layer disposed on the light emitting function layer;
the packaging layer is arranged on the second electrode layer and comprises an organic buffer packaging layer, and the organic buffer packaging layer is manufactured by adopting the manufacturing method of the organic buffer packaging layer of the light-emitting device in any embodiment.
In one embodiment, the encapsulation layer further comprises a first inorganic encapsulation layer disposed on the second electrode layer, and a second inorganic encapsulation layer disposed on the organic buffer encapsulation layer.
In one embodiment, the material of the first inorganic encapsulation layer and the second inorganic encapsulation layer is selected from one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and titanium dioxide.
According to the light-emitting device, the organic buffer packaging layer and the manufacturing method thereof, the organic buffer packaging layer is manufactured through a plasma enhanced chemical vapor deposition process, a first buffer layer is formed by adopting gradually-changed radio frequency power, radio frequency or radio frequency duty ratio, and then a second buffer layer is formed on the first buffer layer. Taking the change of the radio frequency power in the first buffer layer manufacturing process as an example, in the first stage, because the power is higher just beginning, the dissociation rate of the vaporized gas of the organic source is higher, and the vaporized gas is easier to be decomposed, and impurity particles formed by incomplete cracking or uneven polymerization of the organic source are not easy to generate in the formed film, and the main body part of the organic buffer encapsulation layer is formed in the second stage.
Drawings
Fig. 1 is a schematic structural view of a light emitting device of an embodiment;
FIG. 2 is a schematic flow chart illustrating the fabrication of the light emitting device shown in FIG. 1;
FIG. 3 is a schematic view of a first inorganic encapsulation layer formed on a second electrode layer;
FIG. 4 is a schematic view of a first buffer layer formed on a first inorganic encapsulation layer;
FIG. 5 is a schematic view of a second buffer layer formed on the first buffer layer;
FIG. 6 is a schematic view of a third buffer layer formed on the second buffer layer;
FIG. 7 is a graph showing the variation of RF power during the fabrication of an organic buffer encapsulation layer in example 1;
fig. 8 is a graph showing the variation of rf frequency during the process of fabricating the organic buffer encapsulation layer in example 1.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the present invention provides a method for fabricating an organic buffer encapsulation layer of a light emitting device, the organic buffer encapsulation layer includes a first buffer layer 141 and a second buffer layer 142, the method includes the following steps:
the first buffer layer 141 is formed through a first stage by a plasma enhanced chemical vapor deposition process.
The second buffer layer 142 is formed on the first buffer layer 141 through a second stage by a plasma enhanced chemical vapor deposition process.
In the first stage, the radio frequency power is gradually reduced, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power of the first stage; or
In the first stage, the radio frequency is gradually increased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage; or
In the first stage, the radio frequency duty ratio is gradually reduced, and in the second stage, the radio frequency duty ratio is not higher than the minimum radio frequency duty ratio in the first stage.
The organic buffer packaging layer is a film layer which is soft and has the stress of the film layer being almost zero when being bent, and the organic buffer packaging layer can be made of silicon oxycarbide, parylene, polypropylene, polystyrene, polyimide and the like. Organic buffering encapsulating layer main function is the stress of buffering adjacent rete, makes the display have better reliability and bending resistance, has higher visible light transmissivity, and the dust impurity that can drop in the encapsulation process of can also cladding is more mellow and more smooth by the dust impurity edges and corners of parcel, is difficult for forming the passageway that water oxygen sees through, has certain water oxygen barrier property.
Likewise, changes in the rf frequency and rf duty cycle can also have the same effect.
In one example, in the first stage, the RF power is from 9.0kW/m2～9.4kW/m2Gradually reduced to 7.0kW/m2～7.4kW/m2In the second stage, the radio frequency power is 4.3kW/m2～4.7kW/m2。
In one example, the radio frequency is gradually increased from 3.0MHz to 3.56MHz to 11.0MHz to 12.0MHz in the first stage, and is 13.0MHz to 13.56MHz in the second stage.
In one example, in the first stage, the radio frequency duty cycle is gradually reduced from 90% -100% to 40% -50%, and in the second stage, the radio frequency duty cycle is 30% -40%.
In one example, the variation of the radio frequency power, the radio frequency or the radio frequency duty cycle is a stepwise gradual variation in the first phase.
In one example, fabricating the organic buffer encapsulation layer further comprises:
in the third stage, a third buffer layer 143 is formed on the second buffer layer 142.
In the first stage, the radio frequency power is gradually reduced, in the third stage, the radio frequency power is gradually increased, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power of the first stage and the minimum radio frequency power of the third stage; alternatively, the first and second electrodes may be,
in the first stage, the radio frequency is gradually increased, in the third stage, the radio frequency is gradually decreased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage and the maximum radio frequency in the third stage; alternatively, the first and second electrodes may be,
in the first stage, the radio frequency duty ratio is gradually reduced, in the first stage, the radio frequency duty ratio is gradually increased, and in the second stage, the radio frequency duty ratio is not higher than the maximum radio frequency duty ratio in the first stage and the maximum radio frequency duty ratio in the third stage.
In one example, in the third stage, the RF power is from 7.0kW/m2～7.4kW/m2Gradually increased to 9.0kW/m2～9.4kW/m2。
In one example, the radio frequency is gradually reduced from 11.0MHz to 12.0MHz to 3.0MHz to 3.56MHz during the third stage.
In one example, in the third phase, the radio frequency duty cycle is gradually increased from 40% to 50% to 90% to 100%.
In one example, the change in rf power, rf frequency, or rf duty cycle is a step gradual change in the third phase.
In one example, the first buffer layer has a thickness of 0.1 to 1 μm, the second buffer layer has a thickness of 1 to 5 μm, and the third buffer layer has a thickness of 0.1 to 1 μm.
As shown in fig. 2 to 5, the present invention further provides a method for manufacturing a light emitting device, including the following steps:
step one, manufacturing or providing a light emitting device main body, wherein the light emitting device main body comprises a substrate 110 and a light emitting assembly 120, the light emitting assembly 120 comprises a first electrode layer, a light emitting function layer and a second electrode layer, the first electrode layer is arranged on the substrate 110, the light emitting function layer is arranged on the first electrode layer, and the second electrode layer is arranged on the light emitting function layer.
And secondly, manufacturing a packaging layer on the light-emitting device main body, wherein the packaging layer comprises an organic buffer packaging layer, and the organic buffer packaging layer is manufactured by adopting the manufacturing method of the organic buffer packaging layer in any example.
In one example, the second buffer layer overlies the first buffer layer in an orthographic area of the first buffer layer.
In one example, the encapsulation layer further includes a first inorganic encapsulation layer 130 and a second inorganic encapsulation layer 150, the first inorganic encapsulation layer 130 is disposed on the second electrode layer, the organic buffer encapsulation layer is disposed on the first inorganic encapsulation layer 130, and the second inorganic encapsulation layer 150 is disposed on the organic buffer encapsulation layer.
More specifically, the method of manufacturing a light emitting device of the present example includes the steps of:
step one, manufacturing or providing a light emitting device main body, wherein the light emitting device main body comprises a substrate 110 and a light emitting assembly 120, the light emitting assembly 120 comprises a first electrode layer, a light emitting function layer and a second electrode layer, the first electrode layer is arranged on the substrate 110, the light emitting function layer is arranged on the first electrode layer, and the second electrode layer is arranged on the light emitting function layer.
Step two, a first inorganic encapsulation layer 130 is fabricated on the second electrode layer.
Step three, fabricating an organic buffer encapsulation layer on the first inorganic encapsulation layer 130.
Step four, a second inorganic encapsulation layer 150 is fabricated on the organic buffer encapsulation layer.
The organic buffer packaging layer is manufactured by a plasma chemical vapor deposition process and is divided into a plurality of process stages, wherein the process stages comprise:
in the first stage, a first buffer layer 141 is formed on the first inorganic encapsulation layer 130.
In the second stage, the second buffer layer 142 is formed on the first buffer layer 141.
In the first stage, the radio frequency power is gradually reduced, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power of the first stage; alternatively, the first and second electrodes may be,
in the first stage, the radio frequency is gradually increased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage; alternatively, the first and second electrodes may be,
in the first stage, the radio frequency duty ratio is gradually reduced, and in the second stage, the radio frequency duty ratio is not higher than the maximum radio frequency duty ratio in the first stage.
The first inorganic encapsulation layer 130 and the second inorganic encapsulation layer 150 are relatively hard films and relatively large film stress when the films are bent, and the materials of the first inorganic encapsulation layer and the second inorganic encapsulation layer can be one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide and titanium dioxide, so that the first inorganic encapsulation layer and the second inorganic encapsulation layer have relatively ideal water and oxygen blocking capability and relatively high visible light transmittance.
Further, the invention also provides a light-emitting device which is manufactured by the manufacturing method of any one of the embodiments.
According to the light-emitting device, the organic buffer packaging layer and the manufacturing method thereof, the organic buffer packaging layer is manufactured through a plasma enhanced chemical vapor deposition process, a first buffer layer is formed by adopting gradually-changed radio frequency power, radio frequency or radio frequency duty ratio, and then a second buffer layer is formed on the first buffer layer. Taking the change of the radio frequency power in the first buffer layer manufacturing process as an example, in the first stage, because the power is higher just before, the dissociation rate of the vaporized gas of the organic source is higher, and the vaporized gas is easier to be decomposed, and impurities, dust or non-target polymers formed by incomplete cracking or uneven polymerization of the organic source are not easy to generate in the formed film, and the main body part of the organic buffer packaging layer is formed in the second stage. And because the power is lower, the carbon content is higher, less organic source vaporized gas is dissociated, and the film in the part has higher fluidity, dust coverage and stress buffering performance, and is more suitable for being used as an intermediate film layer of film encapsulation. In addition, the organic buffer packaging layer is closer to the first inorganic packaging layer and is closer to the inorganic property, the bonding force with the first inorganic packaging layer is stronger, and the bending resistance can be improved.
The present invention is further illustrated by the following specific examples.
Example 1
The method for manufacturing the light-emitting device provided by the embodiment comprises the following steps:
step S110, providing a light emitting device main body disposed in the chamber, wherein the light emitting device main body includes a substrate 110, a first electrode layer disposed on the substrate 110, a light emitting functional layer disposed on the first electrode layer, and a second electrode layer disposed on the light emitting functional layer.
Step S120, as shown in fig. 3, a first inorganic encapsulation layer 130 is fabricated on the second electrode layer by using magnetron sputtering, evaporation, chemical vapor deposition, atomic layer deposition, molecular layer deposition, inkjet printing, and other methods.
In step S130, as shown in fig. 4, an organic buffer encapsulation layer is formed on the first inorganic encapsulation layer 130 by using a plasma enhanced chemical vapor deposition process.
The plasma enhanced chemical vapor deposition process parameters comprise:
air pressure: 0.6-0.8 mTorr;
the distance between the bedplate and the electrode plate: 38-42 mm;
gas flow rate of HMDSO (hexamethyldisiloxane): 500 to 550sccm/m2；
O2Flow ratio to HMDSO gas: 8-12;
N2diffusion gas and carrier gas flow: 11950sccm/m2；
Radio frequency: 13.56 MHz;
the radio frequency power is gradually loaded in different stages, and the method is specifically divided into the following three stages:
the first stage is as follows: as shown in FIG. 5, a larger range of RF power was used, starting at 9.2kW/m2After each 10 seconds of loading, use 0.2kW/m less RF power than before2Is applied to the chamber for 100 seconds until the RF power is 7.4kW/m2The first buffer layer 141 is formed. Namely the first 10s of the reaction, the power loaded by the deposited film is 9.2kW/m2When the reactions were progressed to the beginning of 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, respectively, the power applied to deposit the thin film was changed to 9.0kW/m, respectively2、8.8kW/m2、8.6kW/m2、8.4kW/m2、8.2kW/m2、8.0kW/m2、7.8kW/m2、7.6kW/m2、7.4kW/m2All last for 10 s.
And a second stage: as shown in FIG. 6, a smaller range of RF power is used, starting at 6.2kW/m2After each 15 seconds of loading, the radio frequency power used is 0.1kW/m less than before2Is applied to the chamber for 240 seconds until the RF power is 4.7kW/m2. Then from 4.7kW/m2After every 15 seconds of loading, the radio frequency power is 0.1kW/m larger than that before2Is applied to the chamber for 240 seconds until the RF power is 6.2kW/m2。
And a third stage: as shown in FIG. 6, a larger range of RF power was used, beginning at 7.4kkW/m2After each loading for 10 seconds, the radio frequency power of (2 kW/m) is used more than that of the previous radio frequency power2Is applied to the chamber for 100 seconds until the RF power is 9.2kW/m2. The variation of the rf power is shown in fig. 7.
The above three stages respectively form 3 silicon oxycarbide film layers with different film qualities and gradually changed film qualities of the second packaging film layer,
in the first stage, the power is higher (9.2 kW/m) because of the initial power2) The dissociation rate of the vaporized gas of HMDSO is higher, the vaporized gas is easier to decompose, impurities, dust or non-target polymers with aggregated silicon-generating carbon are not easy to generate in the formed film, the carbon content in the formed film is relatively lower, and the film property is closer to that of SiOxAnd thus, the adhesive has better adhesion to the first inorganic encapsulation layer 130, and thus interlayer peeling is not easily generated.
The second stage forms the main body part of the organic buffer packaging layer, the carbon content of the film is higher due to lower total power, but the deposition environment of the film is changed because more silicon oxycarbide is paved in the first stage in the early stage, and impurities, dust or non-target polymers accumulated by silicon carbon can not be generated even if the power is lower. And because the power is lower, the carbon content is higher, less HMDSO vaporized gas is dissociated, and the film of the part has higher fluidity, dust covering performance and stress buffering performance, and is more suitable to be used as an intermediate film layer of film packaging.
In step S140, a second inorganic encapsulation layer 150 is formed on the third buffer layer 143, and the second inorganic encapsulation layer 150 is made of a material similar to that of the first inorganic encapsulation layer 130, and the light emitting device 100 shown in fig. 1 is obtained.
Example 2
The method for manufacturing the light-emitting device provided by the embodiment comprises the following steps:
step S210, providing a light emitting device main body disposed in the chamber, where the light emitting device main body includes a substrate, a first electrode layer disposed on the substrate, a light emitting functional layer disposed on the first electrode layer, and a second electrode layer disposed on the light emitting functional layer.
Step S220, a first inorganic encapsulation layer is fabricated on the second electrode layer by using magnetron sputtering, evaporation, chemical vapor deposition, atomic layer deposition, molecular layer deposition, inkjet printing, and other methods.
Step S230, forming an organic buffer encapsulation layer on the first inorganic encapsulation layer by using a plasma enhanced chemical vapor deposition process.
The plasma enhanced chemical vapor deposition process parameters comprise:
air pressure: 0.6-0.8 mTorr;
the distance between the bedplate and the electrode plate: 38-42 mm;
gas flow rate of HMDSO: 500 to 550sccm/m2；
O2Flow ratio to HMDSO gas: 8-12;
N2diffusion gas and carrier gas flow: 11950sccm/m2；
Radio frequency power: 6.2kW/m2；
As shown in fig. 8, the rf frequency is gradually loaded in different stages, which is specifically divided into the following three stages:
the first stage is as follows: a larger range of rf frequencies was used, starting at 3.56MHz, and after each 20 seconds of loading, the chamber was loaded with a frequency 2MHz greater than the previous rf frequency for 100 seconds, to an rf frequency of 13.56 MHz. Namely, the first 20s of the reaction progress, the radio frequency used for depositing the thin film is 3.56MHz, and when the reaction progresses to the 20 th, 40 th, 60 th and 80 th s, respectively, the frequencies used for depositing the thin film are changed to 5.56MHz, 7.56MHz, 9.56MHz and 11.56MHz, which last for 20 s.
And a second stage: the second stage film deposition was completed for 240 seconds using a fixed rf frequency of 13.56 MHz.
And a third stage: a larger range of rf power was used, starting at an rf frequency of 11.56MHz, and after each 20 seconds of loading, the chamber was loaded with a frequency 2MHz less than the previous rf frequency for 100 seconds, to an rf power of 3.56 MHz.
Step S240, forming a second inorganic encapsulation layer on the third buffer layer, where the second inorganic encapsulation layer and the first inorganic encapsulation layer are made of similar materials and by a similar preparation method.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A manufacturing method of an organic buffer encapsulation layer of a light-emitting device is characterized in that the organic buffer encapsulation layer comprises a first buffer layer and a second buffer layer covering the first buffer layer, and the manufacturing method of the organic buffer encapsulation layer comprises the following steps:
forming the first buffer layer through a first stage by a plasma enhanced chemical vapor deposition process;
forming the second buffer layer on the first buffer layer through a second stage by a plasma enhanced chemical vapor deposition process;
in the first stage, the radio frequency power is gradually reduced, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power of the first stage; or
In the first stage, the radio frequency is gradually increased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage; or
In the first stage, the radio frequency duty ratio is gradually reduced, and in the second stage, the radio frequency duty ratio is not higher than the minimum radio frequency duty ratio in the first stage.
2. The method of claim 1, wherein during the first stage, the rf power is from 9.0kW/m2～9.4kW/m2Gradually reduced to 7.0kW/m2～7.4kW/m2In the second stage, the radio frequency power is 4.7kW/m2～6.2kW/m2(ii) a Or
In the first stage, the radio frequency is gradually increased from 3.0 MHz-3.56 MHz to 11.0 MHz-12.0 MHz, and in the second stage, the radio frequency is 13.0 MHz-13.56 MHz; or
In the first stage, the radio frequency duty cycle is gradually reduced from 90% -100% to 40% -50%, and in the second stage, the radio frequency duty cycle is 30% -40%.
3. The manufacturing method according to claim 1 or 2, further comprising:
forming a third buffer layer on the second buffer layer through a third stage by a plasma enhanced chemical vapor deposition process;
in the first stage, the radio frequency power is gradually reduced, in the third stage, the radio frequency power is gradually increased, and in the second stage, the radio frequency power is not higher than the minimum radio frequency power in the first stage and the minimum radio frequency power in the third stage; or
In the first stage, the radio frequency is gradually increased, in the third stage, the radio frequency is gradually decreased, and in the second stage, the radio frequency is not lower than the maximum radio frequency in the first stage and the maximum radio frequency in the third stage; or
In the first stage, the radio frequency duty ratio is gradually reduced, in the third stage, the radio frequency duty ratio is gradually increased, and in the second stage, the radio frequency duty ratio is not higher than the minimum radio frequency duty ratio in the first stage and the minimum radio frequency duty ratio in the third stage.
4. The method of claim 3,
in the third stage, the RF power is from 7.0kW/m2～7.4kW/m2Gradually increased to 9.0kW/m2～9.4kW/m2(ii) a Or
In the third stage, the radio frequency is gradually reduced from 11.0 MHz-12.0 MHz to 3.0 MHz-3.56 MHz; or
In the third stage, the radio frequency duty ratio is gradually increased from 40% -50% to 90% -100%.
5. The method of manufacturing of claim 1, wherein the variation of the radio frequency power, the radio frequency, or the radio frequency duty cycle is a stepwise gradual variation in the first stage.
6. The method of claim 1, wherein the organic buffer encapsulation layer is made of one or more materials selected from silicon oxycarbide, parylene, polypropylene, polystyrene, and polyimide.
7. The method according to claim 3, wherein the first buffer layer has a thickness of 0.1 to 1 μm, the second buffer layer has a thickness of 1 to 5 μm, and the third buffer layer has a thickness of 0.1 to 1 μm.
8. A light emitting device, comprising:
a light emitting device main body including a substrate, a first electrode layer disposed on the substrate, a light emitting function layer disposed on the first electrode layer, and a second electrode layer disposed on the light emitting function layer;
the packaging layer is arranged on the second electrode layer and comprises an organic buffer packaging layer, and the organic buffer packaging layer is manufactured by the manufacturing method of the organic buffer packaging layer of the light-emitting device according to any one of claims 1 to 7.
9. The light emitting device of claim 8, wherein the encapsulation layer further comprises a first inorganic encapsulation layer disposed on the second electrode layer and a second inorganic encapsulation layer disposed on the organic buffer encapsulation layer.
10. The light emitting device according to claim 9, wherein a material of the first inorganic encapsulation layer and the second inorganic encapsulation layer is selected from one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and titanium dioxide.
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