CN112349663B - Double-layer heat dissipation structure for power semiconductor module - Google Patents
Double-layer heat dissipation structure for power semiconductor module Download PDFInfo
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- CN112349663B CN112349663B CN202011110769.0A CN202011110769A CN112349663B CN 112349663 B CN112349663 B CN 112349663B CN 202011110769 A CN202011110769 A CN 202011110769A CN 112349663 B CN112349663 B CN 112349663B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a double-layer heat dissipation structure for a power semiconductor module, which comprises a power chip, a cooling plate, a first copper-clad ceramic substrate and a second copper-clad ceramic substrate, wherein the power chip is arranged on the top layer of the first copper-clad ceramic substrate through a first soldering tin layer, the bottom layer of the second copper-clad ceramic substrate is arranged on the surface of the cooling plate through a second soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate are connected through a third soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate form a laminated ladder structure, and the area of the first copper-clad ceramic substrate is smaller than that of the second copper-clad ceramic substrate. The heat dissipation structure is adaptive to a heat diffusion path through double-layer heat dissipation of the stepped structure, heat is uniformly transferred to each layer of the heat dissipation structure, the heat transfer efficiency and the thermal cycle fatigue life of the carrier are improved, and the packaging and manufacturing cost of the power module is reduced.
Description
Technical Field
The invention relates to the technical field of power semiconductors, in particular to a double-layer heat dissipation structure for a power semiconductor module.
Background
The power module is a whole formed by combining and packaging power electronic components according to certain functions, has the advantages of small size, high power density and the like, and is widely applied to the field of new energy automobiles. With the development of new energy vehicles towards high power, long endurance and the like, the application environment of the power module is increasingly severe, and the reliability of the power module is widely concerned.
Thermal reliability is an important component of power module reliability, and thermal reliability requires that a power module have good heat dissipation performance. The heat in the power module mainly comes from the chip, the copper layer and the busbar terminal, wherein the heat generated by the chip and the copper layer is mainly transferred to the cooling plate through the carrier, and finally the heat is transferred out through the cooling liquid.
The thermal resistance and heat equation is as follows:
wherein R is thermal resistance, lambda is material thermal conductivity coefficient, S is isothermal surface area, L is thickness of each layer of the carrier, delta T is temperature difference, and Q is heat.
As can be seen from the formulas (1) and (2), the smaller the thermal resistance, the better the heat transfer effect. Thermal resistance is inversely proportional to the thermal conductivity of the material. For a carrier with a laminated structure, the total thermal conductivity has the following relationship with the thickness of each layer structure and the thermal conductivity of the material:
wherein, λ is the total thermal conductivity of the carrier with laminated structure, δ i Is the thickness of each layer structure of DBC, lambda i The thermal conductivity of each layer of material.
As can be seen from the formula (3), the total thermal conductivity of the carrier with a stacked structure is related to the thickness and thermal conductivity of each layer, and therefore, the selection of a carrier material with a high thermal conductivity is an important measure for solving the thermal reliability of the power module.
The traditional power module adopts a single-layer copper-clad ceramic substrate structure, and although the single-layer copper-clad ceramic substrate packaging structure has good heat dissipation performance, the single-layer copper-clad ceramic substrate packaging structure has larger parasitic inductance. In order to reduce parasitic inductance, current power modules typically employ a multi-layer copper-clad ceramic substrate structure. On the basis of meeting the requirement of low parasitic inductance, a carrier material with high heat conductivity is usually selected for the multilayer copper-clad ceramic substrate structure to solve the heat dissipation problem. However, the use of high thermal conductivity carrier materials increases costs. From the formula (1), it can be seen that the same thermal resistance effect can be achieved by properly decreasing the thermal conductivity and increasing the isothermal surface area. The reason is that the material with slightly low heat conductivity coefficient is selected, so that more heat is gathered between carrier layers, more heat is transferred along the interlayer plane, the interlayer temperature is more uniform, the isothermal surface area of each layer is increased, and the same thermal resistance effect is finally achieved. As shown in figure 1, schematic diagrams of isotherms and heat conduction areas corresponding to two different schemes are given, wherein the heat conduction coefficient of the insulating layer in the scheme 1 is greater than that of the insulating layer in the scheme 2, but the heat conduction coefficient of the insulating layer in the scheme 2 is larger than that of the insulating layerArea S of isothermal surface of scheme 1 on section 1 1 Area S of isothermal surface smaller than scheme 2 2 Therefore, the same heat transfer effect can be achieved in case of the case 1 and the case 2.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a double-layer heat dissipation structure for a power semiconductor module, which adapts to a heat diffusion path through double-layer heat dissipation of a stepped structure, uniformly transfers heat to each layer of the heat dissipation structure, improves the heat transfer efficiency of a carrier and the thermal cycle fatigue life, and reduces the packaging and manufacturing cost of the power module.
In order to solve the technical problem, the double-layer heat dissipation structure for the power semiconductor module comprises a power chip, a cooling plate, a first copper-clad ceramic substrate and a second copper-clad ceramic substrate, wherein the power chip is arranged on the top layer of the first copper-clad ceramic substrate through a first soldering tin layer, the bottom layer of the second copper-clad ceramic substrate is arranged on the surface of the cooling plate through a second soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate are connected through a third soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate form a laminated stepped structure, and the area of the first copper-clad ceramic substrate is smaller than that of the second copper-clad ceramic substrate.
Further, the first copper-clad ceramic substrate is of a laminated structure, and a first metal layer, a first insulating layer and a second metal layer are sequentially arranged from the top layer to the bottom layer; the second copper-clad ceramic substrate is of a laminated structure and is sequentially provided with a third metal layer, a second insulating layer and a fourth metal layer from the top layer to the bottom layer.
Furthermore, the sum of the thicknesses of the second metal layer, the third soldering tin layer and the third metal layer is respectively larger than the thickness of the first metal layer and the thickness of the fourth metal layer.
Further, the first insulating layer and the second insulating layer are two insulating materials with different heat conducting properties, and the heat conducting property of the first insulating layer is superior to that of the second insulating layer.
Further, the power chip is a power semiconductor component.
The double-layer heat dissipation structure for the power semiconductor module adopts the technical scheme, namely the heat dissipation structure comprises a power chip, a cooling plate, a first copper-clad ceramic substrate and a second copper-clad ceramic substrate, wherein the power chip is arranged on the top layer of the first copper-clad ceramic substrate through a first soldering tin layer, the bottom layer of the second copper-clad ceramic substrate is arranged on the surface of the cooling plate through a second soldering tin layer, the first copper-clad ceramic substrate is connected with the second copper-clad ceramic substrate through a third soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate form a laminated ladder structure, and the area of the first copper-clad ceramic substrate is smaller than that of the second copper-clad ceramic substrate. The heat dissipation structure is adaptive to a heat diffusion path through double-layer heat dissipation of the stepped structure, heat is uniformly transferred to each layer of the heat dissipation structure, the heat transfer efficiency and the thermal cycle fatigue life of the carrier are improved, and the packaging and manufacturing cost of the power module is reduced.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
FIG. 1 is a schematic diagram of isotherms and heat transfer areas corresponding to two schemes;
FIG. 2 is a schematic diagram of a dual-layer heat dissipation structure for a power semiconductor module according to the present invention;
fig. 3 is a schematic diagram of heat transfer of the heat dissipation structure.
Detailed Description
In an embodiment, as shown in fig. 2, the double-layer heat dissipation structure for a power semiconductor module of the present invention includes a power chip 1, a cooling plate 2, a first copper-clad ceramic substrate 3, and a second copper-clad ceramic substrate 4, wherein the power chip 1 is disposed on a top layer of the first copper-clad ceramic substrate 3 through a first solder layer 5, a bottom layer of the second copper-clad ceramic substrate 4 is disposed on a surface of the cooling plate 2 through a second solder layer 6, the first copper-clad ceramic substrate 3 and the second copper-clad ceramic substrate 4 are connected through a third solder layer 7, the first copper-clad ceramic substrate 3 and the second copper-clad ceramic substrate 4 form a stacked ladder structure, and an area of the first copper-clad ceramic substrate 3 is smaller than an area of the second copper-clad ceramic substrate 4.
Preferably, the first copper-clad ceramic substrate 3 has a laminated structure, and comprises a first metal layer 31, a first insulating layer 32 and a second metal layer 33 in this order from the top layer to the bottom layer; the second copper-clad ceramic substrate 4 has a laminated structure, and includes a third metal layer 41, a second insulating layer 42, and a fourth metal layer 43 in this order from the top layer to the bottom layer.
Further, the sum of the thicknesses of the second metal layer 33, the third solder layer 7, and the third metal layer 41 is larger than the thicknesses of the first metal layer 31 and the fourth metal layer 43, respectively.
Preferably, the first insulating layer 32 and the second insulating layer 42 are two insulating materials with different thermal conductivities, and the thermal conductivity of the first insulating layer 32 is better than that of the second insulating layer 42.
Preferably, the power chip 1 is a power semiconductor component. In the heat radiation structure, the power chip can be power devices such as an IGBT (insulated gate bipolar transistor), in order to enable the heat of the power chip to be transmitted to the first copper-clad ceramic substrate in time and reduce the temperature of the power chip, the first insulating layer material in the first copper-clad ceramic substrate is selected from materials with better heat conduction performance.
In order to improve the heat transfer efficiency at the edge position of the second copper-clad ceramic substrate, more heat is transferred to the edge position along the plane of the second copper-clad ceramic substrate, and more heat needs to be transferred to the edge position of the second copper-clad ceramic substrate along the plane of the third metal layer, which requires that the second insulating layer connected with the third metal layer has slightly poorer heat-conducting property. It can be known from the formula (1) that the equivalent thermal resistance effect can be achieved by properly reducing the thermal conductivity λ and increasing the heat dissipation area S. Therefore, the second insulating layer in the second copper-clad ceramic substrate is made of a material with slightly poor heat conduction performance.
As shown in fig. 3, the heat of the power chip 1 is diffused outward layer by layer in the first copper-clad ceramic substrate 3 along the direction of decreasing the isotherm temperature. In order to adapt to a heat diffusion path and improve the heat transfer efficiency of the heat dissipation structure, the first copper-clad ceramic substrate 3 and the second copper-clad ceramic substrate 4 of the heat dissipation structure are arranged into a laminated stepped structure, and the area of the second copper-clad ceramic substrate 4 is larger than that of the first copper-clad ceramic substrate 3.
In addition, in order to ensure that heat can be diffused to the whole second copper-clad ceramic substrate4, the thickness of each layer of the copper-clad ceramic substrate is set to be proper, and the total thickness L of the second metal layer, the first soldering tin layer and the third metal layer is satisfied 2 Are respectively larger than the thickness L of the first metal layer 1 And a fourth metal layer thickness L 3 。
The heat dissipation structure is formed by the double-layer copper-clad ceramic substrates in the laminated step shape, can adapt to a heat diffusion path, uniformly transfers heat to the cooling plate, and improves the heat transfer efficiency of the heat dissipation structure; the heat of the power chip can be rapidly transferred to the copper-clad ceramic substrate, the stress of a soldering tin layer of the power chip is reduced, and the thermal cycle fatigue life of the soldering tin layer is prolonged; and the second copper-clad ceramic substrate is made of an insulating layer material with slightly poor heat conduction performance, so that the heat conduction coefficient of the material is reduced, and the same heat dissipation effect is achieved by increasing the heat dissipation area. Not only the cost is reduced, the second metal layer, the third metal layer and the middle soldering tin layer are heated more uniformly, the stress of the middle soldering tin layer between the second metal layer and the third metal layer is reduced, and the thermal cycle fatigue life is prolonged.
Claims (3)
1. A double-layer heat dissipation structure for a power semiconductor module comprises a power chip and a cooling plate, and is characterized in that: the power chip is arranged on the top layer of the first copper-clad ceramic substrate through a first soldering tin layer, the bottom layer of the second copper-clad ceramic substrate is arranged on the surface of the cooling plate through a second soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate are connected through a third soldering tin layer, the first copper-clad ceramic substrate and the second copper-clad ceramic substrate form a laminated stepped structure, and the area of the first copper-clad ceramic substrate is smaller than that of the second copper-clad ceramic substrate;
the first copper-clad ceramic substrate is of a laminated structure, and a first metal layer, a first insulating layer and a second metal layer are sequentially arranged from the top layer to the bottom layer; the second copper-clad ceramic substrate is of a laminated structure, and a third metal layer, a second insulating layer and a fourth metal layer are sequentially arranged from the top layer to the bottom layer;
the first insulating layer and the second insulating layer are two insulating materials with different heat conducting performances, and the heat conducting performance of the first insulating layer is superior to that of the second insulating layer.
2. The double-layered heat dissipation structure for a power semiconductor module according to claim 1, wherein: the sum of the thicknesses of the second metal layer, the third soldering tin layer and the third metal layer is respectively larger than the thickness of the first metal layer and the thickness of the fourth metal layer.
3. The double-layered heat dissipation structure for a power semiconductor module according to claim 1 or 2, characterized in that: the power chip is a power semiconductor component.
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| CN113745190A (en) * | 2021-08-16 | 2021-12-03 | 西安中车永电电气有限公司 | High-insulation-voltage IGBT module |
| CN117038585A (en) * | 2023-10-08 | 2023-11-10 | 烟台台芯电子科技有限公司 | Copper-clad ceramic substrate structure |
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| CN105140193A (en) * | 2015-05-04 | 2015-12-09 | 嘉兴斯达半导体股份有限公司 | Power module welding structure of copper-clad ceramic heat radiation substrate |
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| JP4206915B2 (en) * | 2002-12-27 | 2009-01-14 | 三菱マテリアル株式会社 | Power module substrate |
| JP6681660B2 (en) * | 2015-03-09 | 2020-04-15 | 三菱マテリアル株式会社 | Substrate for power module with heat sink and power module |
| CN110797318A (en) * | 2019-11-29 | 2020-02-14 | 上海睿驱微电子科技有限公司 | IGBT packaging structure with double-sided heat pipe cooling |
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