CN112349611A - Low-arc lead bonding strength evaluation method - Google Patents
Low-arc lead bonding strength evaluation method Download PDFInfo
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- CN112349611A CN112349611A CN202011220303.6A CN202011220303A CN112349611A CN 112349611 A CN112349611 A CN 112349611A CN 202011220303 A CN202011220303 A CN 202011220303A CN 112349611 A CN112349611 A CN 112349611A
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- 238000011156 evaluation Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000012360 testing method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000010998 test method Methods 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Wire Bonding (AREA)
Abstract
The invention discloses a method for evaluating bonding strength of a low-arc lead, which comprises the following steps: manufacturing a substrate sample wafer, and forming a cavity groove capable of being inserted with a tension hook on the substrate sample wafer; performing lead wedge bonding on the two bonding regions on the substrate sample wafer; testing by adopting a bonding tension testing method, and calculating and analyzing the width and the length of a first bonding point of the lead, parameters of a bonding machine and bonding tension testing data to obtain the corresponding relation between the bonding tension and the width of the bonding point and the parameters of the bonding machine; according to the corresponding relation, the bonding tension strength of the lead with the same arc height and span on the actual substrate can be judged and evaluated by measuring the width of the first bonding point. The method can evaluate the bonding strength of the lead without repeatedly manufacturing a substrate sample wafer; and providing a model diagram in which the width of the wedge-shaped welding spot, the bonding parameters and the reliability tension test data are in one-to-one correspondence, so that the evaluation on the bonding lines with the same span and the same arc height range in production and processing is facilitated.
Description
Technical Field
The invention belongs to an assembly bonding process technology, and can be used for evaluating the low-arc and short-span wedge bonding strength of a microwave chip.
Background
Wire bonding is a key technique for microwave device assembly, and has a significant impact on the characteristics of microwave circuits. The interconnection bonding wire of the microwave chip is different from a common circuit, and in order to reduce the inductance and the impedance of a wire as much as possible, the radian of the bonding wire is required to be reduced as much as possible, and the length of the bonding wire is required to be short as much as possible. At the same span, the wedge bonding can obtain smaller arc height and wire length than the ball bonding process, and the geometry of the bonding wire is easier to control, so the wedge bonding process is preferred when microwave circuit bonding is carried out. But the bonding radian is too low, and a bonding tension test is difficult to perform, so that the low-radian wedge bonding lacks an effective bonding strength evaluation and control means.
Wire bond strength is generally evaluated by inserting a pulling hook under the bonding wire (which is the wire connecting the two bonding regions) and applying a pulling force at about the highest point of the wire's arc, as defined in GJB548B-2005 microelectronic device test method 2011.1. The force direction is perpendicular to the chip or substrate surface, or substantially perpendicular to the line of the two bonding shoulders. When a failure occurs, the magnitude of the force causing the failure and the failure category are recorded. For a 25 μm gold wire before capping, the minimum acceptable pull force is 2.5 gf. However, for low arc, short span bond wires, the bonding pull test cannot be performed because the pull hook cannot be placed under the bond wire.
In order to improve the characteristics of a microwave circuit, short span and low radian lead bonding need to be realized, and the short span and the low radian are defined in the actual wedge bonding process of a microwave chip as follows: the span is 100-350 μm, and the arch height is less than or equal to 50 μm. Aiming at the low-arc short-span lead bonding mode, the existing tensile testing method is difficult to test the bonding strength of the arc height, and the invention aims to solve the problem of evaluating the low-arc short-span wedge-shaped bonding strength by using a substitute evaluation method.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a low-arc lead bonding strength alternative evaluation method, and solves the problem that the conventional bonding wire tension test method cannot test and evaluate the tension of a low-arc short-span bonding wire.
In order to solve the technical problem, the invention provides a method for evaluating the bonding strength of a low-arc lead, which comprises the following steps:
and 4, judging and evaluating the bonding tensile strength of the lead with the same arc height and span on the actual substrate by measuring the width of the first bonding point according to the corresponding relation.
Further, in step 3, the width of the first bonding point, the bonding tension value actually tested and the parameters of the bonding machine are analyzed in a one-to-one correspondence manner, the correspondence between the width of the first bonding point and the bonding tension value is determined, the bonding strength of the lead is judged according to the width of the bonding point,
further, the width of the first bonding point, the actually tested tension value and the parameters of the bonding machine are analyzed in a one-to-one correspondence mode, the corresponding relation between the width of the first bonding point and the bonding tension value is determined, the width of the corresponding bonding point when the bonding tension value is maximum and the bonding tension value is stable is determined, and finally the optimal width of the bonding point and the strength corresponding to the maximum lead tension are determined.
Furthermore, the lead is a wedge-shaped bonding lead with the span of 100-350 μm and the radian of less than or equal to 50 μm.
Further, in step 3, when the bonding tension test method is used for testing, the power and time applied to the first bonding point are continuously increased, the bonding pressure is kept stable, and the deformation width of the first bonding point is at least increased to be more than 2 times of the wire diameter.
Further, in step 2, the wedge-bonded wires are in multiple groups.
Further, in step 3, when a bonding tension test method is used for testing, the mean value of each group of leads is taken for calculation and analysis.
The invention achieves the following beneficial effects:
(1) when the microwave chip is subjected to wedge-shaped bonding in the same low-arc short-span range, the one-to-one substrate sample wafer model is avoided, and the bonding strength of the lead can be evaluated without repeatedly manufacturing the substrate sample wafer;
(2) the conventional bonding assembly process method is optimized, and the process parameters of low-arc and short-span lead wedge bonding are given;
(3) and aiming at the wedge bonding with low arc and short span, a model diagram in one-to-one correspondence to the width of a wedge bonding point, bonding parameters and reliability tension test data is provided, so that the evaluation on the bonding line with the same span and arc height range in production and processing is facilitated.
Drawings
FIG. 1 is a schematic diagram of a bond wire pull test of the present embodiment;
FIG. 2 is a graph of bond site width versus tension, CPK.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The method for evaluating the bonding strength of the low-arc lead adopted in the embodiment comprises the following steps:
and 4, judging and evaluating the tensile strength of the lead with the same arc height and span on the actual substrate by measuring the width of the first bonding point according to the corresponding relation.
The specific implementation process comprises the following steps:
1. preparation of a Special sample
An experimental sample wafer suitable for short span and low radian is prepared by utilizing the LTCC substrate. Because the span is short, a transverse groove is cut between two bonding areas of the substrate by adopting a laser cutting method, and the tension hook can be inserted into the right lower end of the bonding wire. For achieving the evaluation of the bonding strength (see fig. 1).
2. Preparation of samples for substitute evaluation of bonding Strength
The bonding strength substitution evaluation samples were completed using a phi 25 μm wire and a semi-automatic wedge bonder 676. And firstly, measuring the width of the first bonding point of the bonded sample, and recording measurement data. Then 30 bonding wires are extracted from each group for destructive tension test, and data are recorded. And (3) sorting the recorded data, and respectively calculating the width mean value of the bonding point, the tension mean value of the bonding wire and the Cpk value of bonding, wherein the specific data are shown in a table 1.
Table 1 distribution table for bonding strength test of gold-plated substrate
Description of the drawings: cpk rating: a + + grade Cpk is more than or equal to 2.0 particularly preferred; the A + grade is 2.0 and Cpk is more than or equal to 1.67 and excellent; the good state of A grade 1.67 > Cpk is more than or equal to 1.33 and is stable; class B1.33 > Cpk ≥ 1.0; the difference that the C grade is more than 1.33 and Cpk is more than or equal to 1.0; d-scale 0.67 > Cpk is not preferred.
3. Analysis of test procedures
In the process of debugging the equipment parameters, the bonding pressure is stabilized between 50 and 60(grams), the ultrasonic power and the bonding time of the first bonding point are continuously increased, the deformation width of the bonding wire is increased from 27.6 mu m to 70.2 mu m, and the maximum width is nearly 3 times of the wire diameter. When the parameter setting of the wire tail (second bonding point) is unchanged, the length of the first bonding point does not change greatly.
The width of the first bonding point, the bonding tension and the CPK value in the table 1 are taken to draw a correlation diagram shown in the figure 2, the deformation width of the first half section is basically in direct proportion to the effective tension, and the deformation width of the second half section is in inverse proportion. And the bond site width is one-sided up. That is to say, with the increase of bonding parameters, the bonding width is the process of gradually increasing, and the thickness of the welding spot is also reduced, so the effective adhesive force between the welding surface and the bonding gold wire is also changed continuously, and the resulting tensile force value is also obviously changed.
As can be seen from table 1, the tensile values of the groups all meet the requirements of the method 2011.1 of the test method and program of the GJB548B-2005 microelectronic device, the average value of the group 5 reaches the maximum average value, the average value of the tensile force is stable when the group is 3-6, and the average value of the tensile force is in a descending trend after the group is 6. Therefore, the alternative method can be utilized when the tension is inconvenient to measure, so that the strength of the bonding wire is ensured, and the reliability of the bonding wire is ensured.
The patent is established in the production and processing process of microwave device assembly, and because the LTCC substrate and the bonded chip in the actual processing process are kept relatively compact and no gap can be reserved, the bonding strength evaluation of a DAGE4000 tensile machine is difficult to perform after the completion of a low-arc and short-span wedge-shaped bonding line. Therefore, a sample wafer is manufactured, an LTCC cavity groove through which a pulling mechanism can pass is formed, then an experiment is carried out, the width of a first point of bonding is in one-to-one correspondence with an actual pulling force value and parameters of a bonding machine, the best bonding pressing width is found, in the later production, sample wafer preparation is not needed for all products, and the strength of the pulling force of the low-arc short-span wedge-shaped bonding line can be determined through the width of the bonding point.
Through the method disclosed by the patent, a more convenient and faster bonding wire strength evaluation alternative method is found. The process method can be applied to the production and processing of a series of microwave circuit low-arc and short-span wedge-shaped bonding.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A low-arc lead bonding strength evaluation method is characterized by comprising the following steps:
step 1, manufacturing a substrate sample wafer, wherein a cavity groove capable of being inserted with a tension hook is formed between two bonding areas on the substrate sample wafer;
step 2, performing wedge bonding between the two bonding areas on the substrate sample wafer;
step 3, testing by adopting a specified bonding tension testing method, and calculating and analyzing a first bonding point of the lead, parameters of the bonding machine and bonding tension testing data to obtain a corresponding relation between bonding tension and width of the bonding point and the parameters of the bonding machine;
and 4, judging and evaluating the bonding tensile strength of the lead with the same arc height and span on the actual substrate by measuring the width of the first bonding point according to the corresponding relation.
2. The method for evaluating the bonding strength of the low-arc lead according to claim 1, wherein in the step 3, the width of the first bonding point, the actually tested bonding tension value and the parameters of the bonding machine are analyzed in a one-to-one correspondence manner, so as to determine the correspondence relationship between the width of the first bonding point and the bonding tension value, and the bonding strength of the lead is judged according to the width of the bonding point.
3. The method for evaluating the bonding strength of the low-arc lead according to claim 1 or 2, wherein in the step 3, the width of the first bonding point, the actually tested tension value and the parameters of the bonding machine are analyzed in a one-to-one correspondence manner, so as to determine the correspondence relationship between the width of the first bonding point and the bonding tension value, and determine the corresponding width of the bonding point when the bonding tension value is maximum and the bonding tension value is stable, that is, the optimal width of the bonding point, which corresponds to the maximum strength of the lead tension.
4. The method of claim 1, wherein the wire is a wedge-shaped bonding wire having a span of 100 μm to 350 μm and a radian of 50 μm or less.
5. The method for evaluating the bonding strength of a low-arc lead according to claim 1, wherein in the step 3, when the bonding tension test method is used for testing, the power and time applied to the first bonding point are continuously increased, the bonding pressure is kept stable, and the deformation width of the first bonding point is increased to at least 2 times of the wire diameter.
6. The method of claim 1, wherein in step 2, the wedge-bonded wires are grouped into sets.
7. The method for evaluating the bonding strength of a low-arc lead according to claim 6, wherein in the step 3, when the test is performed by using the specified bonding tension test method, the mean value of the bonding tensions of each group of leads is taken for calculation and analysis.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011220303.6A CN112349611A (en) | 2020-11-05 | 2020-11-05 | Low-arc lead bonding strength evaluation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115356205A (en) * | 2022-07-27 | 2022-11-18 | 苏州信息职业技术学院 | Wire bonding quality test system and test method for semiconductor chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060027623A1 (en) * | 2004-08-05 | 2006-02-09 | Seiko Epson Corporation | Bonding structure, wire bonding method, actuator device and liquid jet head |
| CN105510225A (en) * | 2015-09-04 | 2016-04-20 | 中国电子科技集团公司第四十一研究所 | Bonding strength test method |
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- 2020-11-05 CN CN202011220303.6A patent/CN112349611A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060027623A1 (en) * | 2004-08-05 | 2006-02-09 | Seiko Epson Corporation | Bonding structure, wire bonding method, actuator device and liquid jet head |
| CN105510225A (en) * | 2015-09-04 | 2016-04-20 | 中国电子科技集团公司第四十一研究所 | Bonding strength test method |
Non-Patent Citations (1)
| Title |
|---|
| 廖小平等: "基于Minitab DOE的铝丝楔焊键合工艺参数优化", 《电子与封装》, vol. 14, no. 6, pages 7 - 11 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115356205A (en) * | 2022-07-27 | 2022-11-18 | 苏州信息职业技术学院 | Wire bonding quality test system and test method for semiconductor chip |
| CN115356205B (en) * | 2022-07-27 | 2024-04-09 | 苏州信息职业技术学院 | Wire bonding quality test system and test method for semiconductor chip |
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