CN112331724B - Diamond NV color center photoelectric sensor, array and preparation method thereof - Google Patents
Diamond NV color center photoelectric sensor, array and preparation method thereof Download PDFInfo
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Abstract
The invention provides a diamond NV color center photoelectric sensor, an array and a preparation method thereof. The preparation method comprises the steps of firstly manufacturing a diamond column generating the NV color center on a diamond substrate, then carrying out plane filling, manufacturing a filter film and a photoelectric sensor, and finally removing materials filled in the plane to obtain the diamond NV color center photoelectric sensor array. The diamond NV color center photoelectric sensor prepared by the invention realizes integration and batch production in micro size.
Description
Technical Field
The invention belongs to the technical field of preparation of diamond color center sensors, and particularly relates to a diamond NV color center photoelectric sensor, a diamond NV color center photoelectric array and a preparation method of the diamond NV color center photoelectric sensor.
Background
The NV color center in the diamond is a defect structure consisting of substitutional nitrogen atoms and adjacent carbon vacancies in the diamond, shows stronger fluorescence under the pumping of laser (such as 532nm), is very stable in NV fluorescence, and is a good single electron source.
The diamond NV color center has various solid single-spin quantum systems with excellent properties, stable energy level structures and excellent light-emitting characteristics, can be controlled by laser and microwaves, can realize measurement of a magnetic field, a temperature field and a microwave field by means of the NV color center, can realize high-sensitivity physical quantity detection, and is widely applied to precise measurement of physical quantities such as a weak magnetic field, an electric field, stress, temperature, pressure and the like. The laser can be used to initialize and read the spin state of NV electrons under room temperature and atmospheric conditions, has excellent optical read-out and polarization properties and a coherence time of millisecond order, and is one of the most successful spin magnetic resonance systems at present.
The traditional diamond NV color center using method is that a conducting structure is prepared on a single diamond color center, and then the conducting structure is matched with an optical filter and a photoelectric sensor to be used, so that measurement of all parameters is realized. Wherein, the diamond NV color center, the optical filter and the photoelectric sensor are single products, the volume is large, and the effective integration can not be realized.
Disclosure of Invention
In view of this, the invention provides a diamond NV color center photoelectric sensor, an array and a preparation method thereof, so as to realize the miniature integration of the diamond NV color center, an optical filter and the photoelectric sensor.
In one aspect, an embodiment of the present invention provides a diamond NV color center photosensor, including:
a diamond substrate comprising a first surface and a second surface disposed opposite one another;
the nitrogen-doped epitaxial layer is epitaxially grown on the first surface of the diamond substrate, and the nitrogen-doped epitaxial layer is activated to generate an NV color center;
the filter film is arranged on the upper surface of the nitrogen-doped epitaxial layer and is used for filtering 532nm laser;
the photoelectric sensor comprises a P-type substrate layer grown on the surface of the filter film and an N-well arranged in the P-type substrate layer, wherein the N-well comprises a first region and a second region, and P is formed in the first region+Layer of and in P+An anode electrode is provided on the layer, and a cathode electrode is provided in the second region.
According to the diamond NV color center photoelectric sensor provided by the embodiment of the invention, the filter membrane is used for filtering laser with the wavelength of 532nm, and the photoelectric sensor integrated on the diamond NV color center is used for converting a light signal passing through the NV color center into an electric signal and is connected with an external system through the anode electrode and the cathode electrode to realize signal transmission. Compared with the prior art, the embodiment of the invention integrates the diamond NV color center, the filter film and the photoelectric sensor on the diamond substrate, thereby realizing integration in a micro size.
On the other hand, the embodiment of the invention provides a diamond NV color center photoelectric sensor array, which is formed by arraying the diamond NV color center photoelectric sensors on a diamond substrate according to a preset rule.
The diamond NV color center photoelectric sensor array provided by the embodiment of the invention can realize the integration of a plurality of groups of micro-size sensors and improve the information precision of detected external magnetic fields, temperature fields, microwave field positions, distances, intensities, directions and the like.
In a third aspect, an embodiment of the present invention further provides a method for manufacturing a diamond NV color center photosensor array, including:
providing a diamond substrate and polishing;
manufacturing a nitrogen-doped epitaxial layer on a diamond substrate, etching the nitrogen-doped epitaxial layer to form an array of nitrogen-doped diamond columns, activating the nitrogen-doped diamond columns, and forming NV color centers in the nitrogen-doped diamond columns;
evaporating a high-reflectivity film on the peripheral side surface of the nitrogen-doped diamond column, and preparing a light filter film on the upper surface of the nitrogen-doped diamond column;
growing a P-type substrate layer on the upper surface of the filter film, and preparing an N well on the P-type substrate layer; dividing the N well into a first region and a second region, preparing P in the first region+Layer of and in P+Preparing an anode electrode on the layer, and preparing a cathode electrode in the second area to form a plurality of NV color center photoelectric sensor arrays.
The embodiment of the invention adopts single crystal block diamond, a nitrogen-doped diamond layer is extended out of the surface of the single crystal block diamond, then the etching preparation of a diamond columnar array is carried out, the NV color center array of the nitrogen-doped diamond column is formed through high-energy electron irradiation and vacuum annealing, then a high-reflection coating is evaporated on the side surface of the nitrogen-doped diamond column, fluorescence is limited in the NV color center of the diamond column, then a light-filtering coating is prepared at the upper end of the NV color center array of the nitrogen-doped diamond column, 532nm laser is filtered, and finally a photoelectric detector is prepared on the columnar diamond NV array. The photoelectric detector is integrated on the diamond NV color center by adopting a CMOS (complementary metal oxide semiconductor) process, and the batch and low-cost preparation of the diamond NV color center photoelectric sensing device is realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a diamond NV color center photosensor structure provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a diamond NV color center photosensor array according to an embodiment of the present invention;
fig. 3 is a schematic top view of the structure of fig. 2.
FIG. 4 is a schematic flow chart of a diamond NV color center array fabrication process provided by an embodiment of the present invention;
fig. 5 is a schematic flow chart of a process for fabricating a photosensor on a single nitrogen-doped diamond column according to an embodiment of the present invention.
FIG. 6 is an embodiment of a diamond NV color center photosensor array application.
In the figure: 1-diamond substrate, 2-nitrogen-doped epitaxial layer, 3-nitrogen-doped diamond column, 4-high-reflectivity film, 5-easily-etched material, 6-light filtering film, 7-Si layer, 8-P type substrate layer, 9-N trap and 10-P+Layer, 11-cathode electrode, 12-anode electrode, 13-laser, 14-phase lock amplifier, A-diamond NV color center photoelectric sensor.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
The embodiment of the invention adopts a CMOS process to realize the collection of the diamond NV color center, the filter membrane and the photoelectric sensor in a micro size.
As an embodiment of the invention, a diamond NV color center photosensor is shown in FIG. 1. The diamond substrate comprises a diamond substrate 1, a nitrogen-doped epitaxial layer 2, a filter film 6 and a photoelectric sensor. The diamond substrate 1 comprises a first surface and a second surface which are oppositely arranged; the nitrogen-doped epitaxial layer 2 is epitaxially grown on the first surface of the diamond substrate 1, and the nitrogen-doped epitaxial layer 2 is activated to generate an NV color center;
the filter film 6 is arranged on the upper surface of the nitrogen-doped epitaxial layer 2, and the filter film 6 is used for filtering laser with the wavelength of 532 nm. The photoelectric sensor comprises a P-type substrate layer 8 grown on the surface of the filter film and an N-well 9 arranged in the P-type substrate layer, wherein the N-well 9 comprises a first region and a second region, and P is formed in the first region+Layer 10 and in P+An anode electrode 12 is provided on the layer 10 and a cathode electrode 11 is provided in the second region.
According to the diamond NV color center photoelectric sensor, the diamond NV color center, the filter film 6 and the photoelectric sensor are integrated on the diamond substrate 1, so that integration in a micro size is realized.
Specifically, the material of the diamond substrate 1 includes, but is not limited to, single crystal diamond, and may also be polycrystalline diamond, amorphous diamond, microcrystalline diamond, or nanocrystalline diamond.
The thickness of the nitrogen-doped epitaxial layer 2 is 0.1-0.5mm, and the nitrogen-doped concentration is 1 ppm-500 ppm. Diamond NV colour centre is a luminescent point defect in diamond. A nitrogen atom replaces a carbon atom in diamond and has a hole adjacent to it, and such a point defect is called a diamond NV colour centre. The nitrogen-doped epitaxial layer 2 needs to be irradiated by high-energy electrons and annealed in vacuum to obtain a high-concentration NV color center.
The filter film 6 can filter 532nm laser and transmit 600 nm-800 nm fluorescence, so that the measurement of the diamond NV color center photoelectric sensor is not influenced by the 532nm laser and the diamond NV color center photoelectric sensor can work normally. The material of the light filter film 6 is HfO2、SiO2、ZrO2、Y2O3、Al2O3、Si3N4、AlF3、MgF2Any one or combination of more of Al and Ni.
In another embodiment, a high-reflectivity film 4 is deposited on the peripheral side surface of the nitrogen-doped epitaxial layer 2, and the high-reflectivity film 4 can prevent fluorescence from being refracted out of the diamond NV color center photosensor, thereby improving the fluorescence collection rate.
As an improved scheme, an anti-oxidation layer or a light shielding layer can be arranged outside the high-reflectivity film 4, and the anti-oxidation layer can protect the surface of the diamond NV color center photoelectric sensor from being oxidized; the shading layer can prevent external light from entering the interior of the diamond NV color center photoelectric sensor to influence the excitation of fluorescence and the collection of the fluorescence.
In summary, according to the diamond NV color center photoelectric sensor provided by the embodiment of the invention, the filter film 6 is added on the diamond NV color center, so that laser with the wavelength of 532nm is effectively filtered. The photoelectric sensor, the filter membrane and the diamond NV color center are integrated together by adopting a CMOS (complementary metal oxide semiconductor) process, so that the diamond NV color center photoelectric sensor realizes micro integration.
As another embodiment of the present invention, the present invention further provides a diamond NV color center photosensor array, as shown in fig. 2, which is formed by arraying the diamond NV color center photosensors on a diamond substrate 1 according to a preset rule.
The array mode can be a plurality of circumferential arrays or rectangular arrays and the like. The selection is made according to the requirements of the detection. The array formation can be realized by etching a plurality of arrays of the nitrogen-doped diamond columns 3 on the diamond substrate 1 according to the pattern of a preset mask on the nitrogen-doped epitaxial layer 2. The shape of the nitrogen-doped diamond column 3 includes, but is not limited to, a cylinder, a cuboid, or a cube. The nitrogen-doped diamond column 3 needs to be irradiated by high-energy electrons and annealed in vacuum to obtain a high-concentration NV color center.
Fig. 3 is a top view of a diamond NV color center photosensor array, which can be used in multiple arrays simultaneously or by cutting off each diamond NV color center photosensor in the array for individual use. The diamond NV color center photoelectric sensor array realizes the integration and batch production of a plurality of groups of micro-size sensors.
The application of the diamond NV color center photoelectric sensor array is shown in fig. 6, when the diamond NV color center photoelectric sensor array is externally connected with a lock-in amplifier 14, 532nm laser 13 is used for irradiating the second surface of the diamond substrate 1 of the diamond NV color center photoelectric sensor array, the diamond NV color center is excited, fluorescence generated by the diamond NV color center filters 532nm laser through a filter film 6, the 600 nm-800 nm fluorescence is transmitted, the transmitted 600 nm-800 nm fluorescence is collected by a photoelectric sensor positioned at the upper part of the diamond NV color center, the diamond NV color center photoelectric sensor converts the collected fluorescence signal into an electric signal and transmits the electric signal to the lock-in amplifier 14, the collection of multiple groups of signals can be realized, and the integration level of the diamond NV color center array, the filter film 6 and the photoelectric sensor is improved.
The embodiment of the invention also provides a preparation method of the diamond NV color center photoelectric sensor array, which comprises the following steps as shown in figures 4 and 5:
a diamond substrate 1 is provided and polished. Before preparation, the diamond substrate 1 was first polished with each surface roughness controlled to 0.2nm to 1 nm. The polishing may be mechanical polishing, chemical polishing, electrolytic polishing, ultrasonic polishing or liquid polishing.
And manufacturing a nitrogen-doped epitaxial layer 2 on the diamond substrate 1, etching the nitrogen-doped epitaxial layer 2 to form an array of nitrogen-doped diamond columns 3, activating the nitrogen-doped diamond columns 3, and forming NV color centers in the nitrogen-doped diamond columns.
A high-reflectivity film 4 is deposited on the peripheral side surface of the nitrogen-doped diamond column 3, and a light filter film 6 is provided on the upper surface of the nitrogen-doped diamond column 3.
Growing a P-type substrate layer 8 on the upper surface of the filter film 6, and preparing an N well 9 on the P-type substrate layer; dividing the N well 9 into a first region and a second region, preparing P in the first region+Layer 10 and in P+Preparing an anode electrode 12 on the layer 10 and a cathode electrode 11 in the second area; a plurality of NV colour centre photosensor arrays are formed on a diamond substrate 1.
In the embodiment of the invention, a diamond substrate 1 is polished, a nitrogen-doped epitaxial layer 2 extends on the surface of the diamond substrate, the nitrogen-doped epitaxial layer 2 is etched to form an array, and a nitrogen-doped diamond column 3NV color center array is formed through high-energy electron irradiation and vacuum annealing; and then evaporating a high-reflection film 6 on the side surface of the nitrogen-doped diamond column 3, limiting fluorescence in the NV color center of the nitrogen-doped diamond column 3, preparing a filter film 6 at the upper end of the NV color center array of the nitrogen-doped diamond column 3, filtering 532nm laser, and finally preparing a photoelectric detector on the NV color center array of the nitrogen-doped diamond column 3, so that the diamond NV color center photoelectric sensor is prepared in batch at low cost.
The respective steps will be described in detail below.
The nitrogen-doped epitaxial layer 2 adopts microwave chemical vapor deposition (MPCVD) technology and uses CH4100sccm、N220sccm and H2And carrying out nitrogen-doped diamond epitaxial preparation at 10sccm, wherein the thickness of the nitrogen-doped epitaxial layer 2 is 0.1-0.5mm, and the nitrogen-doped concentration is 1-500 ppm. Using highly purified N2Gas source and high-inner-wall-cleanliness gas pipe, and high-pressure microwave plasma CH is adopted under ultrahigh vacuum4、H2And N2C, N atoms are excited by the three gases, the atomic-magnetic-moment interaction effect is utilized, the proportion of C, N atoms is accurately controlled by adopting a magnetic and electric constraint method, and the high-nitrogen-doped epitaxial layer 2 is formed.
After the nitrogen-doped epitaxial layer 2 is subjected to photoetching mask, ICP etching is carried out, and O is adopted2And etching the nitrogen-doped epitaxial layer 2 by 100-1000 w of plasma to form an array comprising a plurality of nitrogen-doped diamond columns 3. Wherein the ICP etching mask is Au, Ni and Cr, and the gas is O2. Etching includes, but is not limited to, ICP etching, and wet etching or RIE etching may also be used. The shape of the nitrogen-doped diamond column 3 is determined by the shape of the designed photolithography mask, and the shape of the nitrogen-doped diamond column 3 includes, but is not limited to, a cylinder, a cuboid or a cube.
The NV color center of the nitrogen-doped diamond column 3 can be activated by high-energy electron irradiation. The high-energy electron irradiation can generate a large number of vacancy defects, and the vacancy defects are distributed relatively uniformly, so that NV color centers can be generated. Irradiating the nitrogen-doped diamond column 3 by using high-energy electrons of 2 MeV-10 MeV for 0.5h20 h. Different electron implant doses may form NV color centers at different concentrations. The nitrogen-doped diamond column 3 can generate some unstable defects after electron irradiation, and the irradiated nitrogen-doped diamond column 3 can be treated at 10-5Annealing for 0.5-20 h under mbar and 800-1500 ℃, wherein the unstable defects disappear after annealing, and the concentration of NV color centers is improved.
A high-reflectivity film 4 is deposited on the peripheral side surface of the nitrogen-doped diamond column 3 which generates the NV color center, and the reflectivity of the high-reflectivity film 4 is 99%. The high-reflectivity film 4 can prevent the fluorescence from refracting out of the nitrogen-doped diamond column 3, and the fluorescence collection rate is improved. And an oxidation-resistant layer can be evaporated on the outer side of the high-reflectivity film 4, and the oxidation layer can protect the surface of the nitrogen-doped diamond column 3 from being oxidized. The high-reflectivity film 4 can also be coated with a light shielding layer by evaporation, and the light shielding layer can prevent external light from entering the nitrogen-doped diamond column 3 to influence the excitation of fluorescence and the collection of fluorescence.
In one embodiment, to facilitate subsequent processing on the nitrogen-doped diamond columns 3, the voids between the array of nitrogen-doped diamond columns 3 need to be filled with an easily etchable material 5 first. The easily etchable material 5 includes, but is not limited to, SiO2、SiN4Or Al2O3After filling, the height of the easy-etching material 5 is the same as that of the nitrogen-doped diamond column 3. The growth mode of the easily-etched material 5 can be selected from the following modes: physical vapor deposition or chemical vapor deposition.
After the filling is finished, in order to facilitate subsequent preparation, the filling surface needs to be polished, and on one hand, the height of the easily-etched material 5 is consistent with that of the nitrogen-doped diamond column 3; on the other hand, other films generated on the upper surface of the nitrogen-doped diamond column 3 in the processing process can be removed, so that fluorescence generated on the nitrogen-doped diamond column 3 can be not blocked and is completely received by the photoelectric sensor.
The fluorescence is generated by exciting a diamond NV color center by 532nm laser, the wavelength of the fluorescence is 600nm to 800nm, in order to avoid interference of the 532nm laser on receiving the 600nm to 800nm fluorescence, the filter membrane 6 is specially made, the 532nm laser is filtered, and a photoelectric sensor can receive fluorescence signals conveniently. The photoelectric detector is prepared by the following specific steps:
a Si layer 7 is grown on the filter 6. Because the photoelectric sensor needs to be manufactured on the semiconductor substrate, the Si layer 7 needs to be grown on the filter film 6, and the Si layer has the advantages of low cost, high thermal conductivity, mature manufacturing process and convenience for subsequent P-type doping. Compound semiconductors such as gallium nitride, gallium arsenide can also be grown on the surface of the filter film 6.
A P-type underlayer 8 is prepared on the Si layer 7. P-type doping is performed on the Si layer 7, and P-type ions are activated by high-temperature annealing treatment to form a P-type underlayer 8. After the Si layer 7 is doped with a trace amount of P-type ions of boron, aluminum, indium or gallium, a plurality of holes which lack electrons are generated in the Si layer 7, so that the concentration of the holes in the Si layer 7 is greatly higher than that of free electrons, and after high-temperature annealing, the P-type ions are activated to form a P-type substrate layer 8.
An N-well 9 is prepared on the P-type substrate layer 8. An N well 9 is formed by photolithography masking on the P type substrate layer 8 and then implanting N type ions. The N-type ions refer to ions of a group five element, and high-concentration N-type ions must be implanted into the P-type substrate layer 8, that is, the concentration of the implanted N-type ions is higher than that of the P-type ions in the P-type substrate layer 8, so that the P-type is changed into the N-type, and after high-temperature annealing, the N-type ions are activated, so that the preparation of the N-well 9 is realized.
Preparation of P on N-well+Layer 10. Injecting P-type ions into the photoetching mask on the N-well, wherein the concentration of the P-type ions injected into the N-well is higher than that of the N-type ions in the N-well, so that the N-type is changed into the P-type to form the P-type+Layer 10, annealing to activate P-type ions to form P+Layer 10, P+The layer 10 and the N-well 9 form a PN junction, forming a photosensor.
And preparing an electrode. A cathode electrode 11 is vapor-deposited on the N well 9, and P is+An anode electrode 12 is vapor deposited on the layer 10.
The easily-etched material 5 can be SiO2、SiN4Or Al2O3And finally, removing the easily-etched material 5 between the nitrogen-doped diamond columns by adopting dry etching or wet etching to obtain the diamond NV color center photoelectric sensor array.
And (3) preparing the diamond NV color center photoelectric sensor array, and cutting to form a single diamond NV color center photoelectric sensor.
The preparation process according to the invention is further described below by means of two specific examples.
One embodiment comprises the following steps:
(1) polishing the single crystal diamond substrate 1, and controlling the surface roughness of each diamond substrate 1 surface to be 1 nm;
(2) using CH by MPCVD techniques4 100sccm、N220sccm and H2Carrying out nitrogen-doped diamond epitaxy at 10sccm, wherein the thickness of the nitrogen-doped epitaxial layer 2 is 0.1 mm;
(3) photoetching and masking the nitrogen-doped epitaxial layer 2, and performing ICP etching, O2Etching the nitrogen-doped diamond column 3 by plasma 600W;
(4) irradiating the prepared nitrogen-doped diamond column 3 array for 2h by using 10MeV high-energy electrons, and carrying out vacuum annealing at 800 ℃ for 2h to activate an NV color center;
(5) evaporating a high-reflectivity film 4 on the peripheral surface of the side of the nitrogen-doped diamond column 3, wherein the reflectivity is 99%;
(6) growing SiO using PECVD2Filling the nitrogen-doped diamond column 3 array, and polishing the surface of the filled diamond column;
(7) preparing a light filtering film 6 on the array of the filled nitrogen-doped diamond columns 3;
(8) growing a Si layer 7 on the filter film 6;
(9) injecting low-concentration P-type impurities on the Si layer to form a P-type substrate layer 8;
(10) a photoetching mask is arranged on the P type substrate layer 8, and high-concentration N type impurities are injected to form an N well 9;
(11) implanting high concentration P-type impurity into the N-well 9 by photolithography to form P+A layer 10;
(12) a cathode electrode 11 is vapor-deposited on the N well 9, and P is+An anode electrode 12 is vapor-plated on the layer 10;
(13) removing SiO among the nitrogen-doped diamond column 3 arrays2。
Wherein another embodiment comprises the steps of:
(1) selecting and polishing single crystal diamond substrates 1, and controlling the surface roughness of each diamond substrate 1 surface to be 0.2 nm;
(2) using CH by MPCVD techniques4 200sccm、N210sccm and H2Carrying out nitrogen-doped diamond epitaxy at 10sccm, wherein the thickness of the nitrogen-doped epitaxial layer 2 is 0.5 mm;
(3) performing a photolithographic mask on the nitrogen-doped epitaxial layer 2, performing ICP etching, and performing O2Etching the nitrogen-doped diamond column 3 by using 500W of plasma; (ii) a
(4) Irradiating the prepared nitrogen-doped diamond column 3 array for 2h by using 5MeV high-energy electrons, and carrying out vacuum annealing at 800 ℃ for 2 h;
(5) evaporating a high-reflectivity film 4 on the peripheral surface of the side of the nitrogen-doped diamond column 3, wherein the reflectivity is 99%;
(6) growing SiO using PECVD2Filling the nitrogen-doped diamond column 3 array, and polishing the surface of the filled diamond column;
(7) preparing a light filtering film 6 on the filled nitrogen-doped diamond column 3;
(8) growing a Si layer 7 on the filter film 6;
(9) injecting low-concentration P-type impurities on the Si layer to form a P-type substrate layer 8;
(10) a photoetching mask is arranged on the P type substrate layer 8, and high-concentration N type impurities are injected to form an N well 9;
(11) implanting high concentration P-type impurity into the N-well 9 by photolithography to form P+A layer 10;
(12) a cathode electrode 11 is vapor-deposited on the N well 9, and P is+An anode electrode 12 is vapor-plated on the layer 10;
(13) removing planar SiO among the nitrogen-doped diamond column 3 arrays2。
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A diamond NV color center photosensor, comprising:
a diamond substrate comprising first and second oppositely disposed surfaces;
the nitrogen-doped epitaxial layer is epitaxially grown on the first surface of the diamond substrate, and the nitrogen-doped epitaxial layer is activated to generate an NV color center;
the filter film is arranged on the upper surface of the nitrogen-doped epitaxial layer and is used for filtering laser with the wavelength of 532 nm;
the photoelectric sensor comprises a P-type substrate layer grown on the surface of the filter film and an N-well arranged in the P-type substrate layer, wherein the N-well comprises a first region and a second region, and P is formed in the first region+Layer of and in said P+An anode electrode is arranged on the layer, a cathode electrode is arranged in the second area, and the P-type substrate layer is a Si layer, a gallium nitride layer or a gallium arsenide layer.
2. The diamond NV colour center photosensor of claim 1 wherein the peripheral side of said nitrogen doped epitaxial layer is further evaporated with a high reflectivity film.
3. A diamond NV colour centre photosensor according to claim 2, wherein an oxidation resistant or light blocking layer is also provided on the surface of the high reflectivity film.
4. The diamond NV colour center photosensor of claim 1 wherein the filter film material is HfO2、SiO2、ZrO2、Y2O3、Al2O3、Si3N4、AlF3、MgF2Any one or combination of more of Al and Ni.
5. A diamond NV color center photosensor array is characterized in that the diamond NV color center photosensors according to any one of claims 1-4 are arrayed on a diamond substrate according to a preset rule.
6. A preparation method of a diamond NV color center photoelectric sensor array is characterized by comprising the following steps:
providing a diamond substrate and polishing;
manufacturing a nitrogen-doped epitaxial layer on the diamond substrate, etching the nitrogen-doped epitaxial layer to form an array of nitrogen-doped diamond columns, activating the nitrogen-doped diamond columns, and forming NV color centers in the nitrogen-doped diamond columns;
evaporating a high-reflectivity film on the peripheral side surface of the nitrogen-doped diamond column, and preparing a light filter film on the upper surface of the nitrogen-doped diamond column;
growing a P-type substrate layer on the upper surface of the filter film, and preparing an N well on the P-type substrate layer; dividing the N well into a first region and a second region, preparing P in the first region+Layer of and in said P+Preparing an anode electrode on the layer, preparing a cathode electrode in the second area, and forming a plurality of NV color center photoelectric sensor arrays, wherein the P-type substrate layer is a Si layer, a gallium nitride layer or a gallium arsenide layer.
7. The method for preparing a diamond NV colour center photosensor array of claim 6, wherein the steps of growing a P-type substrate layer on the upper surface of the filter film and preparing an N-well on the P-type substrate layer are as follows:
growing a Si layer on the upper surface of the filter film, injecting P-type ions into the Si layer for P-type doping, and annealing and activating;
and photoetching the P-type substrate layer, injecting N-type ions, and preparing an N well.
8. The method of claim 6, wherein prior to the step of preparing a filter on the upper surface of the nitrated diamond pillar, the method further comprises: filling an easily-etched material in the vacant sites among the nitrogen-doped diamond columns until the vacant sites are flush with the upper surfaces of the nitrogen-doped diamond columns; and
at the P+Preparing an anode electrode on the layer, and removing the easily-etched material after the step of preparing the cathode electrode in the second area.
9. The method of claim 8, wherein the easily etchable material is SiO, the method for making a diamond NV colour center photosensor array2、Si3N4Or Al2O3。
10. The method of making a diamond NV colour centre photosensor array of any one of claims 6 to 9 further comprising:
dicing the NV color center photosensor array to form a diamond NV color center photosensor of claim 1.
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| CN113049996B (en) * | 2021-03-09 | 2023-06-06 | 郑州大学 | Mixed microwave integrated circuit sensor based on diamond nitrogen vacancy color center |
| CN113046725B (en) * | 2021-05-27 | 2021-11-16 | 武汉大学深圳研究院 | NV color center diamond covered by boron nitride surface layer, and preparation method and application thereof |
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