CN112331554B - Thin film deposition method, semiconductor device manufacturing method and semiconductor device - Google Patents
Thin film deposition method, semiconductor device manufacturing method and semiconductor device Download PDFInfo
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- CN112331554B CN112331554B CN201910718090.0A CN201910718090A CN112331554B CN 112331554 B CN112331554 B CN 112331554B CN 201910718090 A CN201910718090 A CN 201910718090A CN 112331554 B CN112331554 B CN 112331554B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Abstract
The application relates to a thin film deposition method, a manufacturing method of a semiconductor device and the semiconductor device. The thin film deposition method may include: placing a semiconductor substrate in a deposition chamber; filling mixed gas containing first reaction gas and second reaction gas into the deposition chamber; adjusting the radio frequency power of the radio frequency generator to a first radio frequency power, so that the first reaction gas and the second reaction gas react under the first radio frequency power to deposit a target film on the semiconductor substrate; stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas; increasing the radio frequency power of the radio frequency generator from the first radio frequency power to a second radio frequency power so that the second reaction gas and the residual first reaction gas in the deposition chamber fully react under the second radio frequency power; the radio frequency power of the radio frequency generator is gradually reduced from the second radio frequency power to zero at a preset rate. The scheme can reduce the generation of particles so as to avoid the problems of the subsequent process.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a thin film deposition method, a manufacturing method of a semiconductor device and the semiconductor device.
Background
Currently, in the process of manufacturing a semiconductor device, a deposition process is usually used to form a desired thin film, but the deposition process is accompanied by more particles, that is, more particles appear on the formed thin film, which easily causes problems in the subsequent processes (e.g., etching process) and reduces the yield of the product.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present application and therefore may include information that does not constitute prior art known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a film deposition method, a manufacturing method of a semiconductor device and the semiconductor device.
A first aspect of the present application provides a thin film deposition method, comprising:
placing a semiconductor substrate in a deposition chamber;
filling a mixed gas containing a first reaction gas and a second reaction gas into the deposition chamber;
adjusting the radio frequency power of a radio frequency generator to a first radio frequency power, so that the first reaction gas and the second reaction gas react under the first radio frequency power to deposit a target film on the semiconductor substrate;
stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas;
raising the radio frequency power of the radio frequency generator from the first radio frequency power to a second radio frequency power so that the second reaction gas and the residual first reaction gas in the deposition chamber fully react under the second radio frequency power;
gradually reducing the radio frequency power of the radio frequency generator from the second radio frequency power to zero at a preset rate.
In an exemplary embodiment of the present application, after increasing the rf power of the rf generator from the first rf power to a second rf power, and before gradually decreasing the rf power of the rf generator from the second rf power to zero at a preset rate, the method further includes:
stopping filling of the second reactive gas in the mixed gas.
In an exemplary embodiment of the present application, the first reactive gas includes monosilane gas, the second reactive gas includes nitrous oxide gas, and the target film is a silicon oxynitride film.
In an exemplary embodiment of the present application, a flow rate of the monosilane gas in the mixed gas is smaller than a flow rate of the nitrous oxide gas.
In an exemplary embodiment of the present application, the flow rate of the monosilane gas is 100sccm to 1000 sccm; the flow rate of the nitrous oxide gas is 100sccm to 1000 sccm.
In an exemplary embodiment of the present application, the first rf power is 100W to 300W; the second radio frequency power is 150W to 500W.
In an exemplary embodiment of the present application, the mixed gas includes an inert gas in addition to the first reactive gas and the second reactive gas.
In an exemplary embodiment of the present application, the preset rate is 10W/s to 100W/s.
In a second aspect, the present application provides a method for manufacturing a semiconductor device, which includes any one of the above-mentioned thin film deposition methods.
The third aspect of the present application provides a semiconductor device, which is manufactured by the above-mentioned manufacturing method of the semiconductor device.
The technical scheme provided by the application can achieve the following beneficial effects:
the thin film deposition method, the manufacturing method of the semiconductor device and the semiconductor device provided by the application can comprise three main stages, specifically: the first stage is as follows: a mixed gas containing a first reactive gas and a second reactive gas in a deposition chamber is reacted at a first radio frequency power to deposit a target thin film on a semiconductor substrate. The second stage is as follows: stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas; then, the first radio frequency power is increased to the second radio frequency power, so that the second reaction gas fully reacts with the residual first reaction gas in the deposition chamber, the influence of the residual first reaction gas on plasma processing is avoided, the generation of particles in the plasma processing is reduced, and in addition, the bombardment intensity of the target film can be improved by increasing the radio frequency power, namely: the cleaning intensity at the time of plasma treatment is improved, and the number of particles on the surface of the target thin film can be reduced. The third stage is as follows: the second RF power is gradually reduced to zero at a predetermined rate, and the time for cleaning the target thin film can be increased compared to the case of instantaneous reduction to zero, thereby further reducing the number of particles on the surface of the target thin film.
In conclusion, through the three main stages, the number of particles on the target film can be greatly reduced, so that the subsequent etching problem can be avoided, and the yield of products can be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Figure 1 shows a schematic diagram of the stages in a first solution;
FIG. 2 is a schematic view showing the surface of a silicon oxynitride film after a first solution treatment;
FIG. 3 is a schematic diagram showing the surface of the SiON film after being etched on the basis of the first technical scheme;
FIG. 4 is a flow chart showing a thin film deposition method according to a second embodiment;
figure 5 shows a schematic diagram of the stages in a second solution;
FIG. 6 is a schematic view showing the surface of a silicon oxynitride film after a second solution treatment;
fig. 7 is a schematic diagram showing the surface of the silicon oxynitride film after being etched according to the second technical scheme.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first" and "second", etc. are used merely as labels, and are not limiting on the number of their objects.
In order to reduce the number of particles on the surface of the film during the deposition process, the inventors propose a first technical solution, which takes the formation of the silicon oxynitride film as an example, wherein the first technical solution may sequentially include a reaction gas filling stage, a deposition stage, a plasma treatment stage and an end stage. In detail, as shown in fig. 1, the reaction gas filling stage is: introducing nitric oxide and monosilane gas into the deposition chamber; and (3) deposition stage: turning on the radio frequency generator to enable nitric oxide in the deposition chamber to react with monosilane gas under certain radio frequency power so as to deposit a silicon oxynitride film 11 on the semiconductor substrate 10; the plasma treatment stage is as follows: after the deposition phase is finished, stopping filling nitric oxide and monosilane gas into the deposition chamber, and carrying out plasma treatment on the deposited film structure at the same radio frequency power as that of the deposition phase so as to remove particles 12 on the film; and (5) finishing: the radio frequency generator is turned off.
However, it has been found through experiments by the inventors that a small amount of reaction gas remains in the deposition chamber after the deposition phase is completed, i.e., a small amount of reaction gas in the deposition chamber is not completely reacted, which results in a certain amount of particles 12 being generated during the plasma processing phase, i.e., the particles 12 are removed less effectively and more particles 12 are present on the silicon oxynitride film 11, as shown in fig. 2. In addition, the inventors have found that the end phase is entered directly after the plasma treatment phase is completed, and at this time, the rf power is momentarily reduced to zero, resulting in a deposited film having a greater number of particles 12.
By adopting the first technical scheme, the silicon oxynitride film 11 still has more particles 12, so that problems occur in subsequent etching, and the structure diagram after the subsequent etching is shown in fig. 3.
In view of at least one of the above-mentioned problems, the inventors have further developed the first technical solution and have proposed a second technical solution, which can greatly reduce the number of particles 12 on the deposited film compared to the first technical solution. It has been found experimentally that the number of particles 12 on the deposited film in the second embodiment is about one tenth of the number of particles 12 in the first embodiment, as shown in fig. 2 and 6. For example, the number of particles on the deposited film in the first embodiment is about 500, and the number of particles on the deposited film in the second embodiment is about 50.
The present application will now describe in detail a second solution proposed by the inventors.
In an embodiment of the present application, a thin film deposition method is provided, as shown in fig. 4, which includes the following steps:
step S100, placing a semiconductor substrate in a deposition chamber; for example, the semiconductor substrate 10 may be a wafer, but is not limited thereto, the semiconductor substrate 10 may also be a semiconductor made of other materials, and the shape of the semiconductor substrate 10 is not limited to a circle, but may also be other shapes, such as: square, etc.;
step S102, filling mixed gas containing first reaction gas and second reaction gas into a deposition chamber;
step S104, adjusting the radio frequency power of the radio frequency generator to a first radio frequency power, so that the first reaction gas and the second reaction gas react under the first radio frequency power to deposit a target film on the semiconductor substrate 10;
step S106, stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas;
step S108, increasing the radio frequency power of the radio frequency generator from the first radio frequency power to a second radio frequency power, so that the second reaction gas and the residual first reaction gas in the deposition chamber fully react under the second radio frequency power;
step S110, gradually decreasing the rf power of the rf generator from the second rf power to zero at a preset rate.
Based on the above, the thin film deposition method may include three main stages, i.e., a first stage, a second stage and a third stage. Wherein:
the first stage may be a PEVCD (Plasma Enhanced Chemical Vapor Deposition) stage. In detail, as shown in fig. 5, the first stage may include a reaction gas filling stage and a deposition stage, which are sequentially performed.
In the reaction gas filling stage, a mixed gas containing a first reaction gas and a second reaction gas may be filled into the deposition chamber. For example, the first reactive gas and the second reactive gas may each be a single component gas (i.e., a single gas), e.g., the first reactive gas may comprise monosilane (SiH)4) The gas, and the second reactant gas may comprise nitrous oxide (N)2O) gas, it being understood that the first and second reactant gases may be not only single component gases, but also mixtures of reactant gases, e.g., the first reactant gas may include SiH4The gas may also include other reactive gases containing silicon, and the second reactive gas may include N2O gas, and may also include other nitrogen element (such as nitric oxide) containing reaction gases; during the reaction gas filling stageThe rf generator may be in an off state, but is not limited thereto, and the rf generator may also be in an on state, but the rf power of the rf generator should be small enough not to react the first reactive gas with the second reactive gas.
During the deposition phase, the rf generator is turned on, and the rf power of the rf generator is adjusted to a first rf power, which may be 100W to 300W, for example: 100W, 150W, 200W, 250W, 300W, so that the first reaction gas and the second reaction gas in the deposition chamber can react at the first rf power to deposit a target thin film on the semiconductor substrate 10. For example, when the first reactive gas is monosilane gas and the second reactive gas is nitrous oxide gas, the target film may be the silicon oxynitride film 11.
When the first reaction gas is monosilane gas and the second reaction gas is nitrous oxide gas, the flow rate of monosilane gas in the mixed gas in the deposition chamber needs to be smaller than that of nitrous oxide gas, namely: the nitrous oxide gas in the mixed gas is sufficient, so that the monosilane gas can be completely reacted as far as possible in the deposition stage. Alternatively, the flow rates of the monosilane gas and the nitrous oxide gas may be 100sccm to 1000sccm, such as: 100sccm, 200sccm, 300sccm, 400sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000 sccm.
It should be understood that the flow rate of the monosilane gas in the mixed gas is not limited to be smaller than the flow rate of the nitrous oxide gas, but may be larger than or equal to the flow rate of the nitrous oxide gas, as the case may be. Wherein even if the flow rate of the monosilane gas in the mixed gas is smaller than the flow rate of the nitrous oxide gas, a small amount of the monosilane gas does not completely react.
In addition, the mixed gas includes, in addition to the first reactive gas and the second reactive gas, an inert gas, which can be used as a carrier gas to carry the first reactive gas and the second reactive gas into the deposition chamber at a certain flow rate, and the inert gas can be, but is not limited to, nitrogen, and other inert gases, such as: and argon gas.
The second stage may be a first plasma processing stage. In detail, in the first plasma treatment stage: firstly, stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas; namely: stopping filling the first reaction gas into the deposition chamber, and continuously filling the second reaction gas into the deposition chamber; then, the rf power of the rf generator is increased from the first rf power to a second rf power, which may be 150W to 500W, for example: 150W, 200W, 250W, 300W, 350W, 400W, 450W, 500W, such that the second reactive gas is sufficiently reactive with the residual first reactive gas within the deposition chamber at the second rf power, i.e.: so that the residual first reaction gas in the deposition chamber is completely reacted.
For example, as shown in FIG. 5, during the first plasma treatment stage, the charging of the monosilane gas into the deposition chamber may be stopped, and the charging of the nitrous oxide gas into the deposition chamber may be continued, so that the nitrous oxide gas can completely react with the residual monosilane gas in the deposition chamber at the second RF power.
As can be seen from the foregoing, the rf power of the first plasma processing stage is greater than the rf power of the deposition stage, and the second reactive gas can completely react with the residual gas in the deposition chamber by increasing the rf power, so as to avoid the influence of the residual first reactive gas on the first plasma processing stage, reduce the generation of particles 12 during plasma processing, and further increase the bombardment intensity on the target thin film by increasing the rf power, that is: the cleaning intensity at the time of plasma treatment is improved, so that the number of particles 12 on the surface of the target film can be reduced.
The third stage may be a second plasma processing stage. In detail, in the second plasma treatment stage: first, the filling of the second reactive gas in the mixed gas is stopped, that is: stopping the filling of the second reactive gas into the deposition chamber, for example, as shown in fig. 5, the filling of the nitrous oxide gas into the deposition chamber may be stopped, which may save gas costs; then, the rf power of the rf generator is gradually reduced from the second rf power to zero at a preset rate, wherein during the process of gradually reducing the second rf power to zero, the target thin film can still be bombarded, so that the target thin film can be continuously cleaned, and since the rf power is gradually reduced to zero in the third stage, compared with the situation of instantaneously reducing to zero, the time for cleaning the target thin film can be increased, so that the number of particles 12 on the surface of the target thin film can be further reduced, as shown in fig. 6. It should be noted that when the rf power of the rf generator is gradually reduced from the second rf power to zero at a predetermined rate, it should be ensured that the deposition chamber is still filled with a gas, which may be an inert gas, so that the pressure in the deposition chamber is substantially constant, thereby ensuring the stability during the plasma cleaning process.
In summary, through the three main stages, as shown in fig. 6, the number of particles 12 on the target film can be greatly reduced, thereby avoiding the problems of the subsequent etching, as shown in fig. 7, and improving the yield of the product.
It should be noted that, in addition to the three main phases, an end phase may be included, namely: the apparatus to be involved in the reaction is switched off, for example the radio-frequency generator and the gas supply apparatus.
It should be understood that different first and second reactive gases may be charged when it is desired to deposit different types of thin films.
The working time of the second stage may be 3s to 10s, for example: 3s, 4s, 5s, 6s, 7s, 8s, 9s, 10 s. In this embodiment, by controlling the working time of the second stage within a range of not less than 3s, the second reactive gas can fully react with the residual first reactive gas in the deposition chamber within the working time, and the plasma cleaning process can be fully performed on the particles 12 on the target film, so that the number of the particles 12 on the target film can be reduced; meanwhile, by controlling the time of the second stage within a range not exceeding 10s, the processing efficiency can be improved.
And the working time of the third stage can be 3s to 10s, such as: 3s, 4s, 5s, 6s, 7s, 8s, 9s, 10 s. In this embodiment, by controlling the operating time of the third stage to be not less than 3 seconds, the particles 12 on the target film can be sufficiently cleaned, so that the number of the particles 12 on the target film can be reduced; meanwhile, by controlling the time of the third stage within a range not exceeding 10s, the processing efficiency can be improved.
The predetermined rate of the rf power reduction in the third stage may be 10W/s to 100W/s, for example: 10W/s, 20W/s, 30W/s, 40W/s, 50W/s, 60W/s, 70W/s, 80W/s, 90W/s, 100W/s. In this embodiment, by controlling the predetermined rate of the rf power decrease in the third stage to be not more than 100W/s, the situation that the rf power decrease speed is too fast and the cleaning effect of the particles 12 is poor can be avoided, so that the number of the particles 12 on the target film can be reduced; meanwhile, the processing efficiency can be improved by controlling the preset rate of the radio frequency power reduction in the third stage to be not less than 10W/s.
The application also provides a manufacturing method of the semiconductor device, which comprises the thin film deposition method in any embodiment.
The application also provides a semiconductor device which is manufactured by adopting the manufacturing method of the semiconductor device.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
Claims (9)
1. A thin film deposition method, comprising:
placing a semiconductor substrate in a deposition chamber;
filling a mixed gas containing a first reaction gas and a second reaction gas into the deposition chamber;
adjusting the radio frequency power of a radio frequency generator to a first radio frequency power, so that the first reaction gas and the second reaction gas react under the first radio frequency power to deposit a target film on the semiconductor substrate;
stopping filling the first reaction gas in the mixed gas, and continuing filling the second reaction gas in the mixed gas;
raising the radio frequency power of the radio frequency generator from the first radio frequency power to a second radio frequency power so that the second reaction gas and the residual first reaction gas in the deposition chamber fully react under the second radio frequency power;
stopping filling of the second reaction gas in the mixed gas;
gradually reducing the radio frequency power of the radio frequency generator from the second radio frequency power to zero at a preset rate.
2. The thin film deposition method of claim 1, wherein the first reactive gas comprises a monosilane gas, the second reactive gas comprises a nitrous oxide gas, and the target thin film is a silicon oxynitride thin film.
3. The thin film deposition method according to claim 2, wherein a flow rate of the monosilane gas in the mixed gas is smaller than a flow rate of the nitrous oxide gas.
4. The thin film deposition method according to claim 3, wherein a flow rate of the monosilane gas is 100sccm to 1000 sccm; the flow rate of the nitrous oxide gas is 100sccm to 1000 sccm.
5. The thin film deposition method of claim 1, wherein the first RF power is 100W to 300W; the second radio frequency power is 150W to 500W.
6. The thin film deposition method of claim 1, wherein the mixed gas contains an inert gas in addition to the first reactive gas and the second reactive gas.
7. The thin film deposition method according to any one of claims 1 to 6,
the preset speed is 10W/s to 100W/s.
8. A method for manufacturing a semiconductor device, comprising: the thin film deposition method of any one of claims 1 to 7.
9. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 8.
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| JP2001015506A (en) * | 1999-06-29 | 2001-01-19 | Nec Yamagata Ltd | Manufacture of antireflection film by plasma cvd |
| CN101533772A (en) * | 2008-03-12 | 2009-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Technological method for etching tungsten gate |
| CN105489464A (en) * | 2011-11-15 | 2016-04-13 | 朗姆研究公司 | Inert-dominant pulsing in plasma processing systems |
| CN105200379A (en) * | 2014-06-25 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering method for depositing thin film |
| CN104233219A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing P-type heavily-doped silicon carbide thin film epitaxial layer by controlling doping source flow |
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