CN112331130A - Drive method and drive device of quantum dot light-emitting diode and display device - Google Patents

Drive method and drive device of quantum dot light-emitting diode and display device Download PDF

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Publication number
CN112331130A
CN112331130A CN201910703109.4A CN201910703109A CN112331130A CN 112331130 A CN112331130 A CN 112331130A CN 201910703109 A CN201910703109 A CN 201910703109A CN 112331130 A CN112331130 A CN 112331130A
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China
Prior art keywords
driving
signal
driving signal
quantum dot
reverse
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CN201910703109.4A
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闫晓林
杨一行
王天锋
芦子哲
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TCL Corp
TCL Research America Inc
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TCL Research America Inc
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Abstract

The invention discloses a driving method, a driving device, a display device and a computer readable storage medium of a quantum dot light emitting diode, wherein corresponding interval driving signals are generated according to device parameters of the quantum dot light emitting diode, when a forward driving signal is finished, the corresponding interval driving signals are sent to the quantum dot light emitting diode, potential barriers of defect potential wells in the quantum dot light emitting diode are changed, so that elimination of electric charges collected in the potential wells is accelerated and limited, and the purpose of prolonging the service life of the quantum dot light emitting diode is achieved.

Description

Drive method and drive device of quantum dot light-emitting diode and display device
Technical Field
The present invention relates to the field of display technologies, and in particular, to a driving method, a driving device, a display device, and a computer-readable storage medium for a quantum dot light emitting diode.
Background
Quantum dot light emitting diodes (QLEDs) are the next generation display technology with high display performance and print display adaptability, however, the lifetime of QLEDs has been a bottleneck that restricts their widespread use. Besides optimization of materials, devices and preparation processes, driving the QLED is also a method capable of slowing down light intensity attenuation of the QLED and prolonging the service life of the QLED. The QLED generally requires a hole transport layer, a quantum dot light emitting layer, and an electron transport layer. Because the energy levels of the layers are different, energy level differences exist, and during the operation of the QLED, charges can be accumulated on an interface with the energy level differences, particularly an interface in contact with the quantum dot light-emitting layer, so that the light-emitting characteristics of the quantum dots can be greatly influenced. Thereby reducing the intensity of the emitted light. On the other hand, inside each material, such as the surface of a quantum dot, there are a large number of defects between molecules of the transport layer material, which are also responsible for confinement of carriers. As the operating time of QLEDs increases, more and more charge is confined to the defects, acting as centers for quenching photons, greatly reducing the emitted light intensity. Therefore, how to eliminate the electric charges confined and accumulated in the potential well and improve the lifetime of the quantum dot light emitting diode is still in need of solution.
Thus, the prior art has yet to be improved and enhanced.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a driving method, a driving device, a display device and a computer readable storage medium for quantum dot light emitting diode, so as to accelerate the restriction and elimination of the electric charges accumulated in the potential well, thereby achieving the purpose of prolonging the lifetime of the quantum dot light emitting diode.
In order to achieve the above object, an embodiment of the present invention provides a driving method of a quantum dot light emitting diode, wherein a corresponding interval driving signal is generated according to a device parameter of the quantum dot light emitting diode; the spaced-apart drive signal comprises at least one of an inverted drive signal and a null drive signal; and when the forward driving signal is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
Optionally, when the forward driving signal in each driving period is finished, the corresponding interval driving signal is sent to the quantum dot light emitting diode.
Optionally, the device parameter includes a valence band energy level difference between a hole transport layer of the quantum dot light emitting diode and a quantum dot light emitting layer.
Optionally, the generating a corresponding interval driving signal according to the device parameter includes: when the valence band energy level difference is greater than or equal to a preset energy threshold, the interval driving signal comprises at least one reverse driving signal; when the valence band energy level difference is less than a preset energy threshold, the interval driving signal comprises at least one idle driving signal.
Optionally, the generating a corresponding interval driving signal according to the device parameter includes: when the valence band energy level difference is greater than or equal to 0.5eV, then the gap drive signal comprises at least one reverse drive signal; when the valence band energy level difference is less than 0.5eV, then the gap drive signal includes at least one dummy drive signal.
Optionally, the device parameters include parameters of a quantum dot light emitting layer of the quantum dot light emitting diode; the quantum dot light-emitting layer parameters comprise at least one of quantum dot type, quantum dot shell material and quantum dot core material.
Optionally, the generating a corresponding interval driving signal according to the device parameter includes: when the quantum dot shell material of the quantum dot light-emitting diode is II-VI semiconductor material, the interval driving signal comprises at least one reverse driving signal.
Optionally, the II-VI semiconductor material includes at least one of ZnS and CdS.
Optionally, the generating a corresponding interval driving signal according to the device parameter includes: when the quantum dot type of the quantum dot light emitting diode is a blue quantum dot, the interval driving signal comprises at least one reverse driving signal.
Optionally, the generating the corresponding interval driving signal according to the device parameter further includes: acquiring a driving parameter of a forward driving signal; the driving parameter comprises at least one of driving time, driving voltage and driving current; and generating the corresponding interval driving signal according to the driving parameter and the device parameter. Optionally, the interval driving signal includes the reverse driving signal, and a duty ratio or an amplitude of the reverse driving signal is in a positive correlation with the driving voltage, the driving current, or the driving time.
Optionally, the generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving voltage is larger than a preset voltage threshold value, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
Optionally, the generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving current is larger than a preset current threshold value, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
Optionally, generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving time is greater than a preset time threshold, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
Optionally, the interval driving signal includes the idle driving signal, and a duty ratio of the idle driving signal is in a positive correlation with the driving voltage, the driving current, or the driving time.
Optionally, the generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving voltage is greater than a preset voltage threshold value, increasing the duty ratio of the idle driving signal.
Optionally, the generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving current is larger than a preset current threshold value, increasing the duty ratio of the idle driving signal.
Optionally, the generating the corresponding interval driving signal according to the driving parameter and the device parameter includes: and when the driving time is greater than a preset time threshold value, increasing the duty ratio of the idle driving signal.
Optionally, the driving method further includes: and after all the driving periods are finished, sending an interval driving signal to the quantum dot light-emitting diode.
Optionally, the interval driving signal includes the reverse driving signal, and the reverse driving signal is a reverse voltage signal or a reverse current signal.
Optionally, the interval driving signal includes the reverse driving signal, and the reverse driving signal is an alternating signal of a reverse voltage signal and a reverse current signal.
Optionally, the interval driving signal includes the reverse driving signal, and a waveform of the reverse driving signal is at least one of a square wave, a triangular wave, a ramp wave, and a sine wave.
Optionally, the interval driving signal includes the reverse driving signal, and when the reverse driving signal includes a reverse voltage signal, a maximum value of the reverse voltage signal is smaller than a breakdown voltage of the quantum dot light emitting diode.
Optionally, the interval driving signal includes the inverse driving signal, and the amplitude of the inverse voltage signal is-0.1V to-10V.
Optionally, the interval driving signal includes the reverse driving signal, and when the reverse driving signal includes a reverse current signal, a maximum value of the reverse current signal is smaller than a breakdown current of the quantum dot light emitting diode.
Optionally, the interval driving signal comprises the reverse driving signal, and the amplitude of the reverse current signal is-0.0001 Am/cm2～-1Am/cm2。
Optionally, the interval driving signal includes the inversion driving signal, and in each driving period, a sum of driving times of all the inversion driving signals accounts for 1% to 99% of a time percentage of each driving period.
Optionally, the interval driving signal includes the inversion driving signal, and in each driving period, a sum of durations of all the inversion driving signals accounts for 10% to 60% of a time percentage of each driving period.
Optionally, the interval driving signal includes the idle driving signal, and a duration of the idle driving signal in each driving period accounts for 1 to 99% of a time percentage of each driving period.
Optionally, the interval driving signal comprises the inverse driving signal, and a frequency of the inverse driving signal is greater than 30 Hz.
Optionally, the interval driving signal includes the reverse driving signal, and a frequency of the reverse driving signal is 60 to 500 Hz.
Optionally, the forward driving signal is a voltage signal or a current signal with an arbitrary waveform.
In order to solve the above technical problem, an embodiment of the present application further provides a driving apparatus for a quantum dot light emitting diode, where the driving apparatus includes: the control module is used for generating corresponding interval driving signals according to device parameters of the quantum dot light-emitting diode; and the driving module is used for sending the corresponding interval driving signal to the quantum dot light-emitting diode when the forward driving signal is finished.
Optionally, the driving device further includes: and the first acquisition module is used for acquiring the device parameters of the quantum dot light-emitting diode.
Optionally, the driving device further includes:
the second acquisition module is used for acquiring the driving parameters of the forward driving signal; the driving parameter comprises at least one of driving time, driving voltage and driving current;
the control module is further configured to generate the corresponding interval driving signal according to the driving parameter and the device parameter.
In order to solve the above technical problem, an embodiment of the present application further provides a display device, including:
a display panel comprising a plurality of quantum dot light emitting diodes;
a driving circuit for driving the display panel to light up according to the driving method as described in any one of the above;
the quantum dot light-emitting diode comprises a bottom electrode, a light-emitting layer and a top electrode which are arranged in a laminated mode, and the driving circuit is connected with the bottom electrode and the top electrode respectively.
Optionally, the quantum dot light emitting diode is a bottom emission device or a top emission device.
Optionally, the display panel includes a red quantum dot light emitting diode, a blue quantum dot light emitting diode, and a green quantum light emitting diode; the driving circuit drives the blue quantum dot light-emitting diode to light according to the driving method.
In order to solve the above technical problem, an embodiment of the present application further provides a computer-readable storage medium, where a computer program is stored, and the computer program, when executed by a processor, implements the steps of the driving method according to any one of the above.
Compared with the prior art, in the quantum dot light emitting diode driving method, the quantum dot light emitting diode driving device, the quantum dot light emitting diode display device and the computer readable storage medium, the corresponding interval driving signal is generated according to the device parameter of the quantum dot light emitting diode, when the forward driving signal is finished, the corresponding interval driving signal is sent to the quantum dot light emitting diode, and the potential barrier of the defect potential well in the quantum dot light emitting diode is changed, so that the elimination of the electric charge which is limited and accumulated in the potential well is accelerated, and the purpose of prolonging the service life of the quantum dot light emitting diode is achieved.
Drawings
Fig. 1 is a schematic flow chart of a driving method according to an embodiment of the present invention.
Fig. 2 is a schematic flow chart of another driving method according to an embodiment of the present invention.
Fig. 3 is a schematic waveform diagram of a driving signal when a valence band energy level difference of the quantum light emitting diode provided by the embodiment of the invention is smaller than a preset energy threshold.
Fig. 4 is a flowchart illustrating a step S10 of a driving method according to an embodiment of the present invention.
Fig. 5 is a waveform diagram of driving signals in embodiment 1 of the present invention.
Fig. 6 is a graph comparing life decay curves of the reverse drive and the normal drive in embodiment 1 of the present invention.
Fig. 7 is a waveform diagram of driving signals in embodiment 2 of the present invention.
Fig. 8 is a graph comparing life decay curves of the reverse drive and the normal drive in embodiment 2 of the present invention.
Fig. 9 is a waveform diagram of driving signals in embodiment 3 of the present invention.
Fig. 10 is a graph comparing life decay curves of the reverse drive and the normal drive in embodiment 3 of the present invention.
Fig. 11 is a waveform diagram of driving signals in embodiment 4 of the present invention.
Fig. 12 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 4 of the present invention.
Fig. 13 is a waveform diagram of driving signals in embodiment 5 of the present invention.
Fig. 14 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 5 of the present invention.
Fig. 15 is a waveform diagram of driving signals in embodiment 6 of the present invention.
Fig. 16 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 6 of the present invention.
Fig. 17 is a waveform diagram of driving signals in embodiment 7 of the present invention.
Fig. 18 is a graph comparing the life decay curves of the reverse drive and the normal drive in example 7 of the present invention.
Fig. 19 is a waveform diagram of driving signals in embodiment 8 of the present invention.
Fig. 20 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 8 of the present invention.
Fig. 21 is a waveform diagram of driving signals in embodiment 9 of the present invention.
Fig. 22 is a graph comparing the life decay curves of the reverse drive and the normal drive in example 9 of the present invention.
Fig. 23 is a waveform diagram of driving signals in embodiment 10 of the present invention.
Fig. 24 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 10 of the present invention.
Fig. 25 is a waveform diagram of driving signals in embodiment 11 of the present invention.
Fig. 26 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 11 of the present invention.
Fig. 27 is a waveform diagram of driving signals in embodiment 12 of the present invention.
Fig. 28 is a graph comparing the life decay curves of the reverse drive and the normal drive in the embodiment 12 of the present invention.
Fig. 29 is a schematic view of a driving device according to an embodiment of the present invention.
Fig. 30 is a schematic view of another driving device according to an embodiment of the present invention.
Fig. 31 is a schematic view of another driving device according to an embodiment of the present invention.
Fig. 32 is a schematic view of another driving device according to an embodiment of the present invention.
Fig. 33 is a schematic view of a display device according to an embodiment of the invention.
Fig. 34 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present invention.
Detailed Description
In view of the shortcomings of short lifetime of the quantum dot light emitting diode in the prior art, the present invention aims to provide a driving method of the quantum dot light emitting diode, which generates a corresponding interval driving signal according to device parameters of the quantum dot light emitting diode, and sends the corresponding interval driving signal to the quantum dot light emitting diode when a forward driving signal is finished, so as to change the potential barrier of the defective potential well in the quantum dot light emitting diode, so as to accelerate the elimination of the electric charges collected in the potential well, and thus achieve the purpose of prolonging the lifetime of the quantum dot light emitting diode.
In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
One embodiment of the present invention provides a driving method of a quantum dot light emitting diode, where the driving method includes:
generating corresponding interval driving signals according to device parameters of the quantum dot light-emitting diode; the spaced-apart drive signal comprises at least one of an inverted drive signal and a null drive signal;
and when the forward driving signal is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
Fig. 1 is a schematic flow chart of a driving method of a quantum dot light emitting diode according to an embodiment, and referring to fig. 1, the driving method in the embodiment includes:
step S10: generating corresponding interval driving signals according to device parameters of the quantum dot light-emitting diode; the interval driving signal includes at least one of an inversion driving signal and a null driving signal.
Step S20: and when the forward driving signal in each driving period is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
In this embodiment, a corresponding interval driving signal is generated according to a device parameter of the quantum dot light emitting diode, where the interval driving signal includes at least one of a reverse driving signal and an idle driving signal, and since the quantum dot light emitting diode is generally composed of a hole transport layer, a quantum dot light emitting layer, and an electron transport layer, and a material and a thickness used for each functional layer may make an energy level difference thereof greatly different, the device parameter of the quantum dot light emitting diode determines an amount of charges accumulated on an interface having the energy level difference during an operation thereof, in this embodiment, a user may generate the corresponding interval driving signal according to the device parameter of the quantum dot light emitting diode, and the interval driving signal may be at least one of the reverse driving signal and the idle driving signal, so that the interval driving signal corresponding to the interval driving signal may be generated based on different quantum dot light emitting diodes, when the forward driving signal in each driving period is finished, the corresponding interval driving signal is sent to the quantum dot light-emitting diode, so that the efficiency of eliminating the electric charge limited and accumulated in the potential well is improved, and the energy consumption of a driving circuit is saved.
In this embodiment, when the forward driving signal in each driving period ends, sending the corresponding interval driving signal to the qd-led specifically includes: and when the falling edge of the forward driving signal in each driving period is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
In one embodiment, the driving period may be any time period set in advance, for example, in the field of lighting, any time period is set to be a time period including a plurality of forward driving signals and a plurality of interval driving signal time periods, and when any forward driving signal is ended, an interval driving signal is sent to the quantum dot light emitting diode; or dividing a continuous forward driving signal for driving the quantum dot light-emitting diode to be lighted into a plurality of driving periods, setting an interval driving signal when the forward driving signal in each driving period is finished, and sending the interval driving signal to the quantum dot light-emitting diode after the forward driving signal is finished so as to accelerate elimination of electric charges limited and accumulated in the potential well and achieve the purpose of prolonging the service life of the quantum dot light-emitting diode. In the field of display panels, each driving period can also be a scanning period of each frame of display picture, and an interval driving signal is set at the end of a forward driving signal in each scanning period, so that the limitation and the electric charge accumulated in a potential well are accelerated and eliminated, and the purpose of prolonging the service life of a quantum dot light-emitting diode is achieved.
In one embodiment, referring to fig. 2, the driving method in the present embodiment further includes:
step S30: and obtaining the device parameters of the quantum dot light-emitting diode.
In this embodiment, the device parameters, the driving voltage and the driving time of the quantum dot light emitting diode determine the number of charges confined and accumulated in the potential well during the operation of the quantum dot light emitting diode, and the device parameters of the quantum dot light emitting diode are obtained in advance, and the corresponding interval driving signal is generated according to the relationship between the device parameters and the preset driving time and the number of accumulated charges, or the corresponding interval driving signal is generated according to the relationship between the device parameters and the preset driving voltage and the number of accumulated charges.
In one embodiment, the device parameter comprises a valence band energy level difference of a hole transport layer and a quantum dot light emitting layer of the quantum dot light emitting diode.
In this embodiment, the depth of the defect potential well caused by different valence band energy level differences is different, when the depth of the defect potential well is smaller, the degree of the electric charge bound to the defect is smaller, and when the depth of the defect potential well is larger, the degree of the electric charge bound to the defect is larger, therefore, the corresponding interval driving signal can be generated through the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer, for example, if the valence band energy level difference is larger, the amplitude or duty ratio of the interval driving signal is higher, and if the valence band energy level difference is smaller, the amplitude or duty ratio of the interval driving signal is smaller, thereby avoiding the driving time waste and the energy consumption waste caused by the interval driving signal which still maintains a larger duty ratio when the depth of the defect potential well is smaller. Further, a corresponding interval driving signal can be generated according to the relationship between the valence band energy level difference and the preset driving time and the number of the accumulated charges, when the valence band energy level difference is higher and the driving time is longer, the interval driving signal is set as a reverse driving signal, and the time or the duty ratio of the reverse driving signal is increased according to the driving time of the forward driving signal. Or generating a corresponding interval driving signal according to the relationship between the device parameter and a preset driving voltage and the number of the accumulated charges, setting the interval driving signal as a reverse driving signal when the valence band energy level difference is higher and the driving voltage is higher, and increasing the time or the duty ratio of the reverse driving signal according to the driving voltage of the forward driving signal.
In one embodiment, the generating the corresponding interval driving signal according to the device parameter includes: when the valence band energy level difference is greater than or equal to a preset energy threshold, the interval driving signal comprises at least one reverse driving signal; when the valence band energy level difference is less than a preset energy threshold, the interval driving signal comprises at least one idle driving signal.
In this embodiment, since the depth of the defect potential well is smaller, the degree of the electric charge bound to the defect is smaller, and the depth of the defect potential well is larger, the degree of the electric charge bound to the defect is larger, so that the valence band energy level difference is compared with the preset energy threshold, and when the valence band energy level difference is greater than or equal to the preset energy threshold, the interval driving signal includes at least one reverse driving signal, that is, at this time, at least one reverse driving signal is sent to the quantum dot light emitting diode to increase the energy of the electric charge escaping from the defect potential well, so as to achieve the purpose of rapidly eliminating the electric charge bound and accumulated in the potential well, and avoid the problem that the electric charge bound and accumulated in the potential well is not completely eliminated. When the valence band energy level difference is smaller than the preset energy threshold, the interval driving signal includes at least one idle driving signal, as shown in fig. 3, when the forward driving signal ends in each driving period T, at least one idle driving signal is sent to the vector sub-point light emitting diode, where the time percentage occupied by the idle driving signal in one driving period T is r0, the driving period T is 1/f, in one embodiment, the frequency f of the idle driving signal is greater than 30Hz, and r0 is between 1% and 99%. In this embodiment, the purpose of quickly eliminating the electric charges confined and accumulated in the potential well can be achieved only by using the idle driving signal, the modification of the driving circuit is avoided, the design of the driving circuit is simplified, and the manufacturing cost is saved.
For example, in one embodiment, when the valence band energy level difference is greater than or equal to 0.5eV, then the gap drive signal comprises at least one inversion drive signal; when the valence band energy level difference is less than 0.5eV, then the gap drive signal includes at least one dummy drive signal.
In one embodiment, the device parameters include quantum dot light emitting layer parameters of the quantum dot light emitting diode; the quantum dot light emitting layer parameters comprise at least one of quantum dot type, quantum dot shell material and quantum dot core material. The quantum dot light-emitting diode is generally composed of a hole transport layer, a quantum dot light-emitting layer and an electron transport layer, the energy level difference of each functional layer is large due to the materials and the thicknesses used by each functional layer, and the energy level barrier difference is large when the quantum dot type, the quantum dot shell material and the quantum dot core material are different, so that the quantum dot light-emitting layer parameters of the quantum dot light-emitting diode can be used for selecting corresponding interval driving signals to drive the quantum dot light-emitting diode.
In one embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is less than 0.5eV, the purpose of rapidly eliminating the electric charges confined and accumulated in the potential well can be achieved only by sending an idle driving signal to the quantum dot light emitting diode, at this time, the interval driving signal is an idle driving signal, and when the forward driving signal in each driving period is finished, the corresponding idle driving signal is sent to the quantum dot light emitting diode, so that the efficiency of eliminating the electric charges confined and accumulated in the potential well is improved, and the energy consumption of a driving circuit is also saved.
In one embodiment, the valence band energy level difference between the hole transport layer and the light emitting layer of the quantum dot light emitting diode is 0.2-0.3 eV. In this embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is 0.2-0.3eV, and when the forward driving signal in each driving period is finished, the corresponding idle driving signal is sent to the quantum dot light emitting diode, so that not only is the efficiency of eliminating the electric charges confined and accumulated in the potential well improved, but also the energy consumption of the driving circuit is saved.
In one embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is greater than or equal to 0.5eV, the greater the depth of the defect potential well, the greater the degree of charge binding to the defect, so that when the forward driving signal in each driving period is over, at least one reverse driving signal is sent to the quantum dot light emitting diode to increase the energy of charge escaping from the defect potential well, so as to achieve the purpose of rapidly eliminating the charge limited and accumulated in the potential well, and avoid the problem of incomplete elimination of the charge limited and accumulated in the potential well.
In one embodiment, the valence band energy level difference between the hole transport layer and the light emitting layer of the quantum dot light emitting diode is 0.7-1.5 eV.
In one embodiment, when the quantum dot shell material of the quantum dots in the quantum dot light emitting layer is a group II-VI semiconductor material, then the space driving signal comprises at least one inversion driving signal. In this embodiment, since the group II-VI semiconductor material has a wide band gap, the group II-VI semiconductor material can perform a good charge confinement effect on the quantum dot core as the quantum dot shell material, but at the same time, a significant energy barrier between the quantum dot shell material and the adjacent hole transport layer is also caused, and this significant energy barrier makes the charges more easily captured by the interface defect state and more difficult to be separated when the quantum dot light emitting diode operates, and also makes it easier to continuously generate a large amount of charge accumulation at the interface between the quantum dot light emitting layer and the hole transport layer, so it is very important to timely and effectively eliminate the interface charge accumulation and the charges in the defect state potential well. And applying a reverse driving signal to the quantum dot light-emitting diode is favorable for achieving the purpose of accelerating elimination of charges accumulated on an interface or captured by defects, so that the service life of the quantum dot light-emitting diode is prolonged.
In one embodiment, the II-VI semiconductor material is a compound semiconductor material composed of group II elements (Zn, Cd, Hg) and group VI elements (S, Se, Te, O) of the periodic Table of elements.
In one embodiment, the II-VI semiconductor material comprises at least one of ZnS, CdS. For example, when the group II-VI semiconductor material is ZnS, the band gap of ZnS is wide, and when the group II-VI semiconductor material is used as a quantum dot shell, the band gap of ZnS can play a good role in binding charges to a quantum dot core, but at the same time, a significant energy level barrier between the quantum dot core and an adjacent hole transport layer is also created, and the significant energy level barrier makes charges more easily captured by an interface defect state and more difficult to be separated when the quantum dot light emitting diode operates, and simultaneously, a large amount of charges are more easily continuously accumulated at an interface between the quantum dot light emitting layer and the hole transport layer, so that it is very important to effectively eliminate the charges accumulated at the interface and in a defect state potential well. And applying a reverse driving signal to the quantum dot light-emitting diode is favorable for achieving the purpose of accelerating elimination of charges accumulated on an interface or captured by defects, so that the service life of the quantum dot light-emitting diode is prolonged.
In one embodiment, when the quantum dot type of the quantum dot light emitting diode is a blue quantum dot, then the interval driving signal includes at least one reverse driving signal.
In this embodiment, the blue quantum dot has a shorter emission wavelength and a wider energy band gap, so that the energy level barrier at the interface becomes more significant, the problem of charge accumulation at the interface and charge confinement to the defect state becomes more serious, and the more prominent effect of accelerating the elimination of the charge accumulated at the interface or trapped in the defect by sending a reverse driving signal to the quantum dot light emitting diode is achieved.
In one embodiment, referring to fig. 4, step S10: generating a corresponding interval drive signal according to the device parameter further comprises:
step S11: acquiring a driving parameter of a forward driving signal in each driving period; the driving parameter comprises at least one of driving time, driving voltage and driving current;
step S12: and generating the corresponding interval driving signal according to the driving parameter and the device parameter.
In this embodiment, the driving parameters of the forward driving signal in each driving period are obtained, the driving parameters include at least one of driving time, driving voltage and driving current, and the corresponding interval driving signal is generated according to the driving parameters and the device parameters. For example, the larger the driving time of the forward driving signal, the larger the driving current, or the larger the driving voltage, the larger the amount of electric charges confined in the defect, and therefore, the larger the duty ratio of the reverse driving signal or the larger the amplitude of the reverse driving signal in the interval driving signal sent to the quantum dot light emitting diode at this time to accelerate the confinement and elimination of the electric charges accumulated in the potential well, the magnitude of the amplitude of the reverse driving signal at this time needs to be smaller than the breakdown voltage of the quantum dot light emitting diode.
In one embodiment, the interval driving signal includes the inversion driving signal, and a duty ratio or an amplitude of the inversion driving signal has a positive correlation with the driving voltage, the driving current, or the driving time.
In this embodiment, the duty ratio or amplitude of the overdrive signal and the driving voltage or the driving current or the driving time have a positive correlation, and the positive correlation may be a preset positive correlation between the duty ratio or amplitude of the overdrive signal and the driving time, and specifically, the positive correlation may be obtained by modeling according to a device parameter, a device current-voltage characteristic curve, a lifetime curve, and the like. The removal of the charge confined in the defect is accelerated by increasing the duty ratio or amplitude of the reverse driving signal when the driving voltage of the forward driving signal is larger, for example, the duty ratio or amplitude of the reverse driving signal is set in a directly proportional relationship with the driving voltage of the forward driving signal, whose proportionality coefficient may be determined according to device parameters or driving parameters, and the duty ratio or amplitude of the reverse driving signal is also increased in proportion when the driving voltage of the forward driving signal is increased. When the driving voltage of the forward driving signal is smaller, the quantity of the charges limited in the defects is reduced, the duty ratio or the amplitude of the reverse driving signal is reduced at the moment, the charges limited in the defects can be eliminated, and meanwhile, the problem that the driving time or the energy consumption of the fixed reverse driving signal is wasted when the forward driving signal is changed can be solved.
In this embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is greater than the preset energy threshold, the purpose of rapidly eliminating the charges confined and accumulated in the potential well can be achieved by sending at least one reverse driving signal to the quantum dot light emitting diode, and the problem of incomplete elimination of the charges confined and accumulated in the potential well is avoided.
In one embodiment, the duty cycle or amplitude of the reverse drive signal is positively correlated with the drive voltage.
In this embodiment, the duty ratio or amplitude of the back driving signal has a positive correlation with the driving voltage, and when the driving voltage of the forward driving signal is larger, the amount of the charges confined in the defect is larger, and at this time, the elimination of the charges confined in the defect is accelerated by increasing the duty ratio or amplitude of the back driving signal, and the positive correlation may be a preset positive correlation between the duty ratio or amplitude of the back driving signal and the driving time, and specifically, the positive correlation may be obtained by modeling according to a device parameter, a device current-voltage characteristic curve, a lifetime curve, or the like, for example, the duty ratio or amplitude of the back driving signal and the driving voltage of the forward driving signal are set to have a positive proportional relationship, a proportionality coefficient of which may be determined according to the device parameter or the driving parameter, and when the driving voltage of the forward driving signal is smaller, the duty ratio or amplitude of the reverse driving signal is also smaller in proportion, so that the problem that the energy consumption is wasted in the fixed reverse driving signal when the forward driving signal is changed can be solved.
Further, the duty ratio or amplitude of the reverse driving signal has a positive correlation with the driving time of the forward driving signal.
In this embodiment, by setting the duty ratio or amplitude of the reverse driving signal and the driving time of the forward driving signal to be in a positive correlation relationship, when the driving time of the forward driving signal increases, the duty ratio or amplitude of the reverse driving signal also increases, and it can be avoided that when the driving time of the forward driving signal changes, the fixed reverse driving signal has the problem of driving time waste or energy consumption waste.
Further, the duty ratio or amplitude of the reverse driving signal may also be in a positive correlation with the driving current of the forward driving signal.
In this embodiment, the duty ratio or amplitude of the reverse driving signal and the driving current of the forward driving signal are set to be in a positive correlation, for example, the duty ratio or amplitude of the reverse driving signal and the driving current of the forward driving signal are set to be in a positive proportional relationship, the proportionality coefficient of the duty ratio or amplitude can be determined according to device parameters or driving parameters, when the driving current of the forward driving signal is reduced, the duty ratio or amplitude of the reverse driving signal is also smaller in proportion, and the problem that when the forward driving signal is changed, the fixed reverse driving signal has energy consumption waste can be avoided.
In one embodiment, said generating the corresponding said interval driving signal according to said driving parameter and said device parameter comprises: and when the driving voltage is larger than a preset voltage threshold value, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
In this embodiment, the driving voltage of the forward driving signal is determined, if the driving voltage is greater than the preset voltage threshold, the amplitude of the reverse driving signal is increased or the duty cycle of the reverse driving signal is increased, that is, only when the driving voltage is greater than the preset voltage threshold, the amplitude of the reverse driving signal is increased or the duty cycle of the reverse driving signal is increased, when the driving voltage is less than or equal to the preset voltage threshold, a fixed and small reverse driving signal can be sent to eliminate the electric charge limited in the potential well, at this time, it is not necessary to calculate the parameters such as the duty cycle and the amplitude of the reverse driving signal based on the forward driving signal, so that the problems of the logic complexity and the energy consumption increase of the driving circuit due to frequent changes of the amplitude or the duty cycle of the reverse driving signal are avoided.
In one embodiment, said generating the corresponding said interval driving signal according to said driving parameter and said device parameter comprises: and when the driving current is larger than a preset current threshold value, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
In this embodiment, the driving current of the forward driving signal is determined, if the driving current is greater than the preset current threshold, the amplitude of the reverse driving signal is increased or the duty cycle of the reverse driving signal is increased, that is, only when the driving current is greater than the preset current threshold, the amplitude of the reverse driving signal is increased or the duty cycle of the reverse driving signal is increased, when the driving current is less than or equal to the preset current threshold, a fixed and small reverse driving signal can be sent to eliminate the electric charge limited in the potential well, at this time, it is not necessary to calculate the parameters such as the duty cycle and the amplitude of the reverse driving signal based on the forward driving signal, so that the problems of the logic complexity and the energy consumption increase of the driving circuit due to frequent changes of the amplitude or the duty cycle of the reverse driving signal are avoided.
In one embodiment, generating the corresponding spaced-apart drive signals according to the drive parameters and the device parameters includes: and when the driving time is greater than a preset time threshold, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
In the embodiment, the driving voltage of the forward driving signal is determined, and if the driving time is longer than a preset time threshold, the amplitude of the reverse driving signal is increased or the duty ratio of the reverse driving signal is increased, that is, the amplitude of the reverse driving signal is increased or the duty ratio of the reverse driving signal is increased only when the driving time is longer than the preset time threshold, and when the driving time is shorter than or equal to the preset time threshold, a fixed small reverse driving signal can be sent to eliminate the charges limited in the potential well, and at this time, the driving circuit is not required to always calculate parameters such as the duty ratio and the amplitude of the reverse driving signal based on the forward driving signal, so that the amplitude or the duty ratio of the reverse driving signal is prevented from being frequently changed, leading to the problems of complex logic and increased energy consumption of the driving circuit.
In an embodiment, at the end of the reverse driving signal, sending a vacant driving signal to the quantum dot light emitting diode is further included. When the transmitted reverse drive signal has reached the charge in the erase defect, a dummy drive signal can be transmitted, thereby reducing power consumption.
In one embodiment, the interval driving signal includes the idle driving signal, and a duty ratio of the idle driving signal is in a positive correlation with the driving voltage, the driving current, or the driving time.
In this embodiment, by setting the duty ratio of the idle driving signal and the driving voltage or the driving current or the driving time of the forward driving signal to be in a positive correlation example relationship, when the driving voltage or the driving current or the driving time of the forward driving signal is reduced, the duty ratio of the idle driving signal is reduced, so that the problem that the driving time is wasted or the energy consumption is wasted in the fixed duty ratio of the idle driving signal when the forward driving signal is changed can be avoided. When the driving voltage or the driving current or the driving time of the forward driving signal is increased, the duty ratio of the idle driving signal is also reduced, and the purpose of eliminating the electric charges limited and accumulated in the potential well can be achieved.
In one embodiment, said generating the corresponding said interval driving signal according to said driving parameter and said device parameter comprises: and when the driving voltage is greater than a preset voltage threshold value, increasing the duty ratio of the idle driving signal.
In this embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is smaller than the preset energy threshold, the purpose of rapidly eliminating the electric charges confined and accumulated in the potential well can be achieved only by sending at least one idle driving signal to the quantum dot light emitting diode, and at this time, if the driving voltage is greater than the preset voltage threshold, the number of the electric charges in the escape potential well is increased by increasing the duty ratio of the idle driving signal.
In one embodiment, said generating the corresponding said interval driving signal according to said driving parameter and said device parameter comprises: and when the driving current is larger than a preset current threshold value, increasing the duty ratio of the idle driving signal.
In this embodiment, when the valence band energy level difference between the hole transport layer of the quantum dot light emitting diode and the quantum dot light emitting layer is smaller than the preset energy threshold, the purpose of rapidly eliminating the electric charges confined and accumulated in the potential well can be achieved only by sending at least one idle driving signal to the quantum dot light emitting diode, and at this time, if the driving current is larger than the preset current threshold, the number of the electric charges in the escape potential well is increased by increasing the duty ratio of the idle driving signal.
In one embodiment, the greater the drive voltage or the greater the drive current of the forward drive signal, the greater the duty cycle of the idle drive signal.
In one embodiment, said generating the corresponding said interval driving signal according to said driving parameter and said device parameter comprises: and when the driving time is greater than a preset time threshold value, increasing the duty ratio of the idle driving signal.
When the driving time of the forward driving signal is longer, the quantity of the charges limited in the defect is larger, and when the driving time is larger than a preset time threshold value, the duty ratio of the idle driving signal is increased so as to rapidly eliminate the charges limited and accumulated in the potential well. When the driving time is less than or equal to the preset time threshold, a fixed small idle driving signal can be sent to eliminate the electric charges limited in the potential well, and at the moment, the driving circuit is not required to always calculate the duty ratio of the idle driving signal based on the forward driving signal, so that the problems of complex logic and increased energy consumption of the driving circuit caused by frequent change of the duty ratio of the idle driving signal are solved.
In one embodiment, the driving method further includes: and sending an interval driving signal to the quantum dot light-emitting diode after all driving periods in any continuous working time are finished.
In this embodiment, the quantum dot light emitting diode is lit by dividing the lighting time into a plurality of driving periods when being lit, each driving period has a forward driving signal and an interval driving signal, and the interval driving signal is sent to the quantum dot light emitting diode after the forward driving signal is ended, so as to accelerate the limitation and the elimination of the electric charges accumulated in the potential well, thereby achieving the purpose of prolonging the service life of the quantum dot light emitting diode.
Further, the quantum dot light emitting diode has a time period limitation in the continuous working time, and may not completely eliminate all accumulated charges, in this embodiment, after all driving periods of the quantum dot light emitting diode in any continuous working time are finished, an interval driving signal is sent to the quantum dot light emitting diode to further eliminate the accumulated charges, and any continuous working time may be a preset time interval.
In one embodiment, the space drive signal can be an inversion drive signal to eliminate the charge trapped and accumulated in the potential well.
In one embodiment, the reverse driving signal is at least one of a reverse voltage signal and a reverse current signal, i.e., the reverse driving signal may be a reverse voltage signal, or a reverse current signal, or include both a reverse voltage signal and a reverse current signal, such as an alternating signal of a reverse voltage and a reverse current.
In one embodiment, when the reverse driving signal is a reverse voltage signal, the quantum dot light emitting diode can be in a certain reverse electric field, under the reverse electric field, the electric charges gathered at the cathode of the interface can be driven to the outside of the quantum dot light emitting diode by the reverse electric field, and the potential barrier of the defect potential well is changed by adjusting the strength of the reverse electric field, so that the electric charges confined in the potential well are more likely to escape, thereby reducing the density of the confined electric charges.
In one embodiment, when the reverse driving signal is a reverse current signal, a certain electron can be injected to the hole side of the quantum dot light emitting diode through a reverse current, and a certain hole is injected to the electron side, so that the reverse type carrier limited in the device is neutralized, and the purpose of reducing the limited charge density is also achieved. Therefore, no matter a reverse voltage signal, a reverse current signal or an alternate signal of the reverse voltage and the reverse current is adopted, the charge elimination which is limited and gathered in the potential well can be realized, the service life of the device is prolonged, furthermore, the driving method can be applied to a circuit which is embedded into an active driving circuit or a passive driving circuit of a QLED (quantum dot light emitting diode), namely, the driving method can be adopted by an active driving panel and a passive driving panel, and the service life of the QLED display device is integrally prolonged.
In one embodiment, when the interval driving signal is a blank driving signal, and no driving signal is output at this time, the driving circuit stops sending signals to the quantum dot light emitting diodes, so that the blank driving signal can be emitted to the quantum dot light emitting diodes immediately after the forward driving signal for driving the quantum dot light emitting diodes is finished. In the invention, the forward driving signal can be a voltage signal or a current signal with any waveform, and can be specifically selected according to actual driving requirements.
Specifically, in the embodiment of the present invention, the waveform of the reverse driving signal is at least one of a square wave, a triangular wave, a ramp wave, and a sine wave, that is, at least one reverse driving signal emitted to the qd led in each driving period may be a reverse driving signal with a single waveform, and when the number of the reverse driving signals in each driving period is greater than 1, a combination of different waveforms may also be used, for example, a square wave reverse driving signal and a triangular wave reverse driving signal are emitted to the qd led in each driving period, which may be specifically adjusted according to actual device requirements, so as to achieve an optimal device effect.
In one embodiment, the sum of the durations of all the inversion driving signals in each driving period is 1% to 99% of the time of each driving period, and when the idle driving signal is provided, the duration of the idle driving signal is 1% to 99% of the time of each driving period, of course, the sum of the durations of all the inversion driving signals in each driving period and the duration of the idle driving signal is less than 99%.
In one embodiment, the sum of the durations of all the inversion driving signals in each driving period accounts for 10% -60% of the time of each driving period, so that the inversion driving signals do not affect the brightness and driving effect of the device, and the required recovery voltage or current of the device can be effectively provided.
In one embodiment, the sum of the durations of all the idle driving signals in each driving period accounts for 10% -60% of the time of each driving period, so that the idle driving signals do not affect the brightness and driving effect of the device, and the recovery voltage or current required by the device can be effectively provided.
In specific implementation, the time, frequency and amplitude of the reverse voltage signal and the reverse current signal can be adjusted to achieve the best effect and prolong the service life of the device to the maximum extent, specifically, the frequency of the reverse voltage signal is greater than 30Hz, the time range is 0.1 ms-999 ms, the amplitude range is-0.1V-10V, the frequency of the reverse current signal is greater than 30Hz, the time range is 0.1 ms-999 ms, and the amplitude range is-0.0001 Am/cm2To-1 Am/cm2. The appropriate time, frequency and amplitude can be selected according to actual conditions to achieve the optimal lifting effect.
In one embodiment, the frequency of the reverse voltage signal and the reverse current signal is preferably 60 to 500Hz because the required reverse driving load is too large due to the high complexity of the required circuit and the increased cost above 240 Hz.
In one embodiment, the amplitude of the reverse voltage is preferably-1V to-5V, because the effect of reverse driving is not obvious when the reverse voltage is lower than-1V, and the driving voltage of-1V to-5V can be provided by the existing mature circuit board, the reverse driving requirement can be met, and the development cost can be saved.
In one embodiment, the amplitude of the reverse current is preferably-0.001 Am/cm2～-0.1Am/cm2When the current is too small, the effect of eliminating the charges in the potential well is not obvious, and when the current is too large, the device can be burnt, so that the safe and stable reverse driving effect can be achieved in the preferred reverse current range.
In the above embodiment, at the end of the forward driving signal in each driving period, an interval driving signal is sent to the qd-led. The present application is not limited to sending an interval drive signal to the qd-led at the end of the forward drive signal in each drive cycle. In one embodiment, an interval driving signal is sent to the quantum dot light emitting diode at the end of a forward driving signal in every two driving periods. In another embodiment, an interval driving signal may be sent to the qd-led at the end of a forward driving signal in every three driving periods, at the end of a forward driving signal in every four driving periods, or at the end of every N driving signals, where N is an integer greater than 4. The method can also be used for sending an interval driving signal to the quantum dot light-emitting diode when the forward driving signal in the driving periods of various forms is ended, for example, sending an interval driving signal to the quantum dot light-emitting diode when the forward driving signal in the first driving period is ended, sending an interval driving signal to the quantum dot light-emitting diode when the forward driving signal in the second to fifth driving periods is ended, and then sending an interval driving signal to the quantum dot light-emitting diode when the forward driving signal in the sixth to seventh driving periods is ended, and so on.
The following embodiments further illustrate the driving method of the quantum dot light emitting diode provided by the present invention.
Example 1
Referring to fig. 5 and 6, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse voltage signal with a square wave waveform, the reverse voltage signal is immediately followed by the forward driving signal, namely, a reverse voltage signal is emitted to the quantum dot light-emitting diode immediately after the forward driving signal is finished, the time percentage of the reverse voltage signal in a driving period T is r, the driving period T is 1/f, the amplitude of the reverse voltage signal is Vre, the frequency f of the reverse voltage signal is more than 30Hz, wherein r is between 1% and 99%, Vre is between-0.1V and-10V, in an actual drive, f is 60Hz, r is 50%, Vre is-3V, and a life decay curve comparison graph is obtained as shown in fig. 6, where the actual life decay curve is longer than without reverse bias.
Example 2
Referring to fig. 7 and 8, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse voltage signal, the waveform of the reverse driving signal is a square wave, and two reverse voltage signals are emitted in one driving period, the occupied time percentages are ra and rb, respectively, meanwhile, the percentage of the idle driving signal is r0 in the present embodiment, that is, the time when no driving signal is output occupies the driving period T is r0, and at this time, the reverse voltage signal can be immediately followed by the forward driving signal or immediately followed by the idle driving signal. Wherein the amplitude of the reverse voltage is Vre, the frequency f of the reverse voltage signal is greater than 30Hz, where ra + rb is between 1% and 99%, r0 is between 1% and 99%, Vre is between-0.1V and-10V, in an actual drive, f is 100Hz, ra is 0%, rb is 20%, r0 is 15%, Vre is-3V, and a comparison graph of the life decay curve is obtained, as shown in fig. 8, the actual life decay curve is longer than without reverse bias.
Example 3
Referring to fig. 9 and 10, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse current signal, the waveform of the reverse driving signal is a square wave, and the reverse current signal is immediately followed by the forward driving signal, that is, immediately after the forward driving signal is finished, a reverse current is emitted to the quantum dot light emitting diodeThe time percentage of the reverse current signal in one driving period to the current signal is r, the amplitude of the reverse current signal is Ire, the frequency f of the reverse current signal is more than 30Hz, wherein r is between 1% and 99%, and Ire is-0.0001 Am/cm-2To-1 Am/cm-2In one practical drive, f is 80Hz, r is 40%, and Ire is-0.001 Am/cm-2A comparison of the life decay curves is obtained as shown in fig. 10, and the actual life decay curve is longer than without the reverse bias.
Example 4
Referring to fig. 11 and 12, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse current signal, the waveform of the reverse driving signal is a square wave, and two reverse current signals are emitted in one driving period, the occupied time percentages are ra and rb, respectively, meanwhile, the occupied time percentage of the idle driving signal in the present embodiment is r0, and at this time, the reverse current signal can be immediately followed by the forward driving signal or immediately followed by the idle driving signal. Wherein the amplitude of the reverse current is Ire, the frequency f of the reverse current signal is greater than 30Hz, wherein ra + rb is between 1% and 99%, r0 is between 1% and 99%, and Ire is between-0.0001 Am/cm-2To-1 Am/cm-2In one practical drive, f is 120Hz, ra is 30%, rb is 0%, r0 is 15%, Ire is-0.002 Am/cm-2A comparison of the life decay curves is obtained as shown in fig. 12, with the actual life decay curve being longer than without the reverse bias.
Example 5
Referring to fig. 13 and 14, in this embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is an alternating signal of a reverse voltage and a reverse current, where waveforms of the reverse voltage and the reverse current are both square waves, the reverse voltage is immediately followed by the forward driving signal, that is, the alternating signal of the reverse voltage and the reverse current is immediately transmitted to the quantum dot light emitting diode after the forward driving signal is ended, a time percentage occupied by the reverse current signal in one driving period is rI, an amplitude of the reverse current signal is Ire, and the reverse voltage signal is located in one driving periodThe time percentage is rV, the amplitude of the reverse voltage is Vre, the frequency f of the reverse driving signal is more than 30Hz, wherein rI and rV are both between 1% and 99%, rV + rI<99% of Ire at-0.0001 Am/cm-2To-1 Am/cm-2Vre is between-0.1V and-10V, and in one practical drive, f is 80Hz, rI is 40%, Ire is-0.001 Am/cm-2When rV is 50% and Vre is-3V, a life decay curve comparison graph is obtained as shown in fig. 14, and the actual life decay curve is longer than that in the case where no reverse bias is applied.
Example 6
Referring to fig. 15 and 16, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, and the reverse driving signal is an alternating signal of a reverse voltage and a reverse current, wherein the waveforms of the reverse voltage and the reverse current are both square waves, meanwhile, the percentage of time occupied by the idle driving signal in the present embodiment is r0, and at this time, the reverse driving signal can be immediately followed by the forward driving signal or immediately followed by the idle driving signal. The time percentage of the reverse current signal in one driving period is rI, the amplitude of the reverse current signal is Ire, the time percentage of the reverse voltage signal in one driving period is rV, the amplitude of the reverse voltage signal is Vre, and the frequency f of the reverse driving signal is more than 30Hz, wherein rI, rV and r0 are all between 1% and 99%, and rV + rI + r0<99% of Ire at-0.0001 Am/cm-2To-1 Am/cm-2Vre is between-0.1V and-10V, and in one practical drive, f is 120Hz, rV is 10%, rI is 30%, r0 is 15%, Ire is-0.002 Am/cm-2When Vre is-2V, a life decay curve comparison graph is obtained as shown in fig. 16, and the actual life decay curve is longer than that in the case where no reverse bias is applied.
Example 7
Referring to fig. 17 and 18, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is an alternating signal of a reverse voltage and a reverse current, wherein a waveform of the reverse current is a ramp wave, and a waveform of the reverse voltage is a triangular wave, and meanwhile, a percentage of time occupied by the idle driving signal in the present embodiment is r0, at this time, the reverse driving signal can be immediately followed by the forward driving signalA power signal or an immediately following idle drive signal. The time percentage of the reverse current signal in one driving period is rI, the amplitude of the reverse current signal is Ire, the time percentage of the reverse voltage signal in one driving period is rV, the amplitude of the reverse voltage signal is Vre, and the frequency f of the reverse driving signal is more than 30Hz, wherein rI, rV and r0 are all between 1% and 99%, and rV + rI + r0<99% of Ire at-0.0001 Am/cm-2To-1 Am/cm-2Vre is between-0.1V and-10V, and in one practical drive, f is 120Hz, rV is 10%, rI is 30%, r0 is 15%, Ire is-0.002 Am/cm-2When Vre is-2V, a life decay curve comparison graph is obtained as shown in fig. 18, and the actual life decay curve is longer than that in the case where no reverse bias is applied.
Example 8
Referring to fig. 19 and 20, in the embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, and the reverse driving signal is a reverse voltage signal, the waveform of which is a triangular wave, that is, the voltage changes in a triangular form with time, in the rising stage, the reverse voltage is larger with the time, and in the falling stage, the reverse voltage is smaller with the time. The dynamic voltage mode can effectively reduce the load of the quantum dot light-emitting diode, so that the device has very small capacitance and inductance reaction. In this embodiment, the waveform of the triangular wave may be an equilateral triangle or a non-equilateral triangle, and the reverse voltage signal is immediately followed by the forward driving signal, that is, a reverse voltage signal is emitted to the quantum dot light emitting diode immediately after the forward driving signal is ended, the time percentage occupied by the reverse voltage signal in one driving period is r, the amplitude of the reverse voltage signal is Vre, and the frequency f of the reverse voltage signal is greater than 30Hz, where r is between 1% and 99%, and Vre is between-0.1V and-10V, and in an actual driving, f is 60Hz, r is 50%, and Vre is-3V, and a life attenuation curve comparison graph is obtained as shown in fig. 20, where the actual life attenuation curve is longer than the case without reverse bias voltage.
Example 9
Referring to fig. 21 and 22, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse voltage signal, the waveform of which is a triangular wave and is applied to a negative voltage Vre, the peak of the triangular wave is defined as Vtr, similarly, the waveform of the triangular wave can be an equilateral triangle or a non-equilateral triangle, and the reverse voltage signal is immediately followed by the forward driving signal, that is, a reverse voltage signal is emitted to the quantum dot light emitting diode immediately after the forward driving signal is ended, the time percentage occupied by the reverse voltage signal in a driving period is r, the frequency f of the reverse voltage signal is greater than 30Hz, wherein r is between 1% and 99%, Vre + Vtr is between-0.1V and-10V, and in an actual driving, f is 60Hz, r is 50%, Vre is-1.5V, vtr is-1.5V, and a comparison graph of the lifetime decay curve is obtained as shown in fig. 22, and the actual lifetime decay curve is longer than the case without the reverse bias.
Example 10
Referring to fig. 23 and fig. 24, in the present embodiment, the forward driving signal is a square wave voltage signal or a square wave current signal, the reverse driving signal is a reverse voltage signal, the waveform of the reverse driving signal is a ramp wave and is loaded on a negative voltage signal Vre, the value of the ramp wave is defined as Vtr, the value of Vtr can be positive or negative, that is, the ramp wave has a slope direction in which the reverse voltage becomes larger (i.e., Vtr is positive) or smaller (i.e., Vtr is negative) as time goes by, and the reverse voltage signal follows the forward driving signal, that is, a reverse voltage signal is emitted to the quantum dot light emitting diode immediately after the forward driving signal is ended, the time percentage occupied by the reverse voltage signal in one driving period is r, the frequency f of the reverse voltage signal is greater than 30Hz, where r is between 1% and 99%, and Vre + Vtr is between-0.1V and-10V, in an actual drive, f is 60Hz, r is 50%, Vre is-3V, and Vtr is-1.5V, and a lifetime decay curve is obtained, as shown in fig. 24, which is longer than the case without reverse bias.
Example 11
Referring to fig. 25 and 26, in this embodiment, the forward driving signal is a triangular voltage signal or a triangular current signal, the reverse driving signal is a reverse voltage signal, and the waveform thereof is also a triangular wave, that is, the driving signal is a triangular wave and the triangular wave has a reverse bias, in this embodiment, the waveform of the triangular wave may be an equilateral triangle or a non-equilateral triangle, and the reverse voltage signal is immediately followed by the forward driving signal, that is, a reverse voltage signal is emitted to the quantum dot light emitting diode immediately after the forward driving signal is ended, a time percentage occupied by the reverse voltage signal in one driving period is r, an amplitude of the reverse voltage signal is Vre, a frequency f of the reverse voltage signal is greater than 30Hz, where r is between 1% and 99%, Vre is between-0.1V and-10V, and in one actual driving, f is 60Hz, as shown in fig. 26, when r is 50% and Vre is-3V, the life decay curve is obtained as a comparison graph, and the actual life decay curve is longer than that in the case where no reverse bias is applied.
Example 12
Referring to fig. 27 and 28, in this embodiment, the forward driving signal is a sinusoidal voltage signal or a sinusoidal current signal, that is, the voltage or current changes with time in a sinusoidal manner, if the turn-on voltage of the device is V0, the device normally operates when the sine wave is greater than V0, the device does not operate when the sine wave is less than V0, the reverse driving signal is a reverse voltage signal, and the waveform thereof is also a sinusoidal wave, that is, the driving signal is a sinusoidal wave and the sinusoidal wave has a reverse bias, that is, a part of the sinusoidal wave is less than 0V, the device is under the action of a reverse electric field, in this embodiment, the reverse voltage signal immediately follows the forward driving signal, that is, a reverse voltage signal is emitted to the quantum dot light emitting diode immediately after the forward driving signal is ended, the time percentage occupied by the reverse voltage signal in one driving period is r, and the amplitude of the reverse voltage, the frequency f of the reverse voltage signal is greater than 30Hz, where r is between 1% and 99%, and Vre is between-0.1V and-10V, and in an actual drive, f is 60Hz, r is 50%, and Vre is-3V, and a life decay curve comparison graph is obtained as shown in fig. 28, where the actual life decay curve is longer than without the reverse bias.
Based on the above-mentioned driving method for the quantum dot light emitting diode, an embodiment of the present invention further provides a driving apparatus for a quantum dot light emitting diode, and as shown in fig. 29, the driving apparatus includes: the control module 100 is configured to generate a corresponding interval driving signal according to a device parameter of the quantum dot light emitting diode; and the driving module 200 is configured to send the corresponding interval driving signal to the quantum dot light emitting diode when the forward driving signal is ended.
In this embodiment, the control module 100 generates a corresponding interval driving signal according to the device parameters of the quantum dot light emitting diode, where the interval driving signal includes at least one of a reverse driving signal and a null driving signal, and since the quantum dot light emitting diode is generally composed of a hole transport layer, a quantum dot light emitting layer, and an electron transport layer, and the energy level difference of each functional layer is very large due to the materials and thicknesses used by each functional layer, the device parameters of the quantum dot light emitting diode determine the amount of charges accumulated on the interface with the energy level difference during the operation of the quantum dot light emitting diode, in this embodiment, the control module 100 generates an interval driving signal corresponding to the quantum dot light emitting diode based on different quantum dot light emitting diodes, and when the forward driving signal is ended, the driving module 200 transmits the corresponding interval driving signal to the quantum dot light emitting diode, so that the efficiency of eliminating the charges accumulated in the potential well and the limitation is improved, but also saves the energy consumption of the driving circuit.
In this embodiment, when the forward driving signal is ended, the driving module 200 sends the corresponding interval driving signal to the quantum dot light emitting diode, which specifically includes: when the falling edge of the forward driving signal is finished, the driving module 200 sends the corresponding interval driving signal to the quantum dot light emitting diode.
In one embodiment, referring to fig. 30, the driving device further comprises: a first obtaining module 301, configured to obtain device parameters of the qd-led.
In this embodiment, the first obtaining module 301 obtains device parameters of the quantum dot light emitting diode, the control module 100 generates a corresponding interval driving signal based on the device parameters of the quantum dot light emitting diode, and then sends the corresponding interval driving signal to the quantum dot light emitting diode through the driving module 200 when the forward driving signal is finished.
In one embodiment, referring to fig. 31, the driving device further includes: the storage module 400 is configured to store device parameters of the quantum dot light emitting diode, and specifically, the device parameters may be stored in the storage module 400 in a pre-storage manner, or the device parameters are obtained by detecting the quantum dot light emitting diode through a detection instrument, and then the device parameters are stored in the storage module 400. For example, if the display panel displays different colors through quantum dot light emitting diodes with different device parameters, because the device parameters of each quantum dot light emitting diode are different, the control module 100 needs to generate a corresponding interval driving signal based on the device of the quantum dot light emitting diode, obtain the device parameters from the storage module 400 in advance through the first obtaining module 301, and process the received driving parameters based on the device parameters by the control module 100 to obtain the corresponding driving signals, where the driving signals include the interval driving signals generated based on the device parameters and the driving parameters.
In one embodiment, referring to fig. 32, the driving device further includes: a second obtaining module 302, configured to obtain a driving parameter of the forward driving signal; the driving parameter includes at least one of a driving time, a driving voltage, and a driving current. The control module 100 in this embodiment is further configured to generate the corresponding interval driving signal according to the driving parameter and the device parameter.
In this embodiment, the second obtaining module 302 obtains the driving parameters of the forward driving signal, and the control module 100 generates the corresponding interval driving signal according to the driving parameters and the device parameters, specifically, the driving parameters of the forward driving signal are stored in the storage module 400 in advance, the driving parameters include at least one of driving time, driving voltage and driving current, and under the determined device parameters, the driving parameters and the amount of the accumulated charges form a preset positive correlation relationship, so that the control module 100 generates the corresponding interval driving signal according to the preset positive correlation relationship, and the elimination of the charges accumulated in the potential well can be speeded up. For example, the larger the driving time of the forward driving signal, the larger the driving current or the larger the driving voltage, the larger the amount of charges confined in the defect, so that the larger the duty ratio of the reverse driving signal or the larger the amplitude of the reverse driving signal in the interval driving signal sent by the driving module 200 to the quantum dot light emitting diode at this time to speed up the confinement and elimination of charges accumulated in the potential well, the smaller the magnitude of the amplitude of the reverse driving signal at this time needs to be than the breakdown voltage of the quantum dot light emitting diode.
Based on the above-mentioned driving method of the quantum dot light emitting diode, an embodiment of the present invention further provides a display device, as shown in fig. 33, the display device in the embodiment includes: a display panel comprising a plurality of quantum dot light emitting diodes; a driving circuit for driving the display panel to light up according to the driving method as described in any one of the above; referring to fig. 34, the qd-led includes a bottom electrode, a light emitting layer, and a top electrode, which are stacked, and the driving circuit is connected to the bottom electrode and the top electrode, respectively.
In one embodiment, the driving circuit in this embodiment sends an interval driving signal to the quantum dot light emitting diode after all driving periods within any continuous working time are finished.
In this embodiment, the quantum dot light emitting diode in the display panel is lit by dividing the lighting time into a plurality of driving periods when the quantum dot light emitting diode is lit, a forward driving signal and an interval driving signal exist in each driving period, and a reverse driving signal is sent to the quantum dot light emitting diode in the display panel after the forward driving signal is finished, so as to accelerate the limitation and the elimination of the electric charges accumulated in the potential well, thereby achieving the purpose of prolonging the service life of the quantum dot light emitting diode.
Further, the quantum dot light emitting diode has a time period limitation in the continuous working time, and may not completely eliminate all accumulated charges, in this embodiment, after all driving periods of the quantum dot light emitting diode in any continuous working time are finished, an interval driving signal is sent to the quantum dot light emitting diode to further eliminate the accumulated charges, any continuous working time may be a preset time interval, for example, any continuous working time may be a time for displaying a frame, and after the display device displays a frame of a display screen, the driving circuit sends an interval driving signal to the display screen to eliminate the accumulated charges left by the quantum dot light emitting diode during a previous frame of the display screen.
In one implementation, each driving period can also be a scanning period of each frame display frame, and the purpose of prolonging the service life of the quantum dot light-emitting diode is achieved by setting an interval driving signal at the end of a forward driving signal in each scanning period to accelerate the elimination of electric charges limited and accumulated in a potential well.
Furthermore, in the video playing process, the display contents of a plurality of frames behind the current playing picture can be obtained in advance through content loading; that is to say, the display panel can obtain in advance which pixel points (quantum dot light emitting diodes) will be lighted in several pictures later in the video playing process, and which pixel points will not be lighted. The driving circuit in the embodiment can also pre-acquire the display contents of a plurality of frames behind the pixel point in the video through content loading; and a reverse driving signal is added before each forward driving signal for driving the plurality of frames of display contents, so that the charge accumulation on pixel points in the video display panel is inhibited in advance, the potential barrier of a defective potential well is changed through the reverse driving signal, the charges limited and accumulated in the potential well are eliminated, and the density of the limited charges is reduced, thereby improving the video display brightness and prolonging the service life of the video display panel.
In one embodiment, the quantum dot light emitting diode can be divided into a bottom emitting device or a top emitting device according to the light emitting direction, which is not limited in the present invention, and also is not limited in the present invention, for example, in order to improve the device efficiency, a hole injection layer and/or a hole transport layer is added between the bottom electrode 10 and the light emitting layer 20, and an electron transport layer and/or an electron injection layer is added between the light emitting layer 20 and the top electrode 30, so as to prepare a front bottom emitting device; or an electron injection layer and/or an electron transport layer is/are added between the bottom electrode 10 and the light-emitting layer 20, and a hole transport layer and/or a hole injection layer is/are added between the light-emitting layer 20 and the top electrode 30, so that the inverted bottom-emitting device is prepared, depending on the device preparation process.
In one embodiment, the display device includes a red quantum dot light emitting diode, a blue quantum dot light emitting diode, and a green quantum dot light emitting diode; the driving circuit drives the blue quantum dot light-emitting diode to light according to the driving method.
In this embodiment, since the blue quantum dot has a shorter emission wavelength and a wider energy band gap, the energy level barrier at the interface becomes more significant, the problem of charge accumulation at the interface and charge confinement to the defect state becomes more serious, and the more prominent effect will be achieved by sending a reverse driving signal to the blue quantum dot light emitting diode to accelerate the elimination of the charge accumulated at the interface or trapped in the defect.
In one embodiment, the red quantum dot light emitting diode and the green quantum light emitting diode drive the red quantum dot light emitting diode and the green quantum light emitting diode to be lighted through a forward driving method.
In one embodiment, the driving circuit drives the red quantum dot light emitting diode and the green quantum dot light emitting diode to light up according to the driving method.
Based on the driving method of the quantum dot light emitting diode provided above, an embodiment of the present invention further provides a computer readable storage medium, where a computer program is stored, and when the computer program is executed by a processor, the steps of the driving method are implemented as any one of the above.
In summary, in the driving method, the driving apparatus, the display apparatus, and the computer readable storage medium for the quantum dot light emitting diode provided by the present invention, the corresponding interval driving signal is generated according to the device parameter of the quantum dot light emitting diode, and when the forward driving signal is finished, the corresponding interval driving signal is sent to the quantum dot light emitting diode, so as to change the potential barrier of the defective potential well in the quantum dot light emitting diode, so as to accelerate the limitation and the elimination of the electric charges accumulated in the potential well, thereby achieving the purpose of prolonging the lifetime of the quantum dot light emitting diode.
It should be understood that in the embodiment of the present Application, the control module 100 may be a Central Processing Unit (CPU), and the Processor may also be other general-purpose processors, Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components, and the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory module 400 may include read-only memory and random access memory, and provides instructions and data to the control module 100. Some or all of the memory module 400 may also include non-volatile random access memory. For example, the storage module 400 may also store information of the device type.
The memory module 400 stores a computer program that can be run on the control module 100, for example, a program of a driving method of a quantum dot light emitting diode. The control module 100 implements the steps in the above-described driving method embodiment when executing the computer program. Alternatively, the control module 100 implements the functions of the modules/units in the above device embodiments, for example, the functions of the modules 100 to 200 in fig. 25, when executing the computer program.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal and method may be implemented in other ways. For example, the above-described apparatus/terminal embodiments are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method of the embodiments described above can be realized by a computer program, which can be stored in a computer-readable storage medium and can realize the steps of the embodiments of the methods described above when the computer program is executed by a processor. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.
It should be understood that equivalents and modifications of the technical solution and inventive concept thereof may occur to those skilled in the art, and all such modifications and alterations should fall within the scope of the appended claims.

Claims (35)

1. A driving method of a quantum dot Light Emitting Diode (LED), the driving method comprising:
generating corresponding interval driving signals according to device parameters of the quantum dot light-emitting diode; the spaced-apart drive signal comprises at least one of an inverted drive signal and a null drive signal;
and when the forward driving signal is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
2. The driving method of claim 1, wherein the step of transmitting the corresponding space driving signal to the qd-led when the forward driving signal is over comprises:
and when the forward driving signal in each driving period is finished, sending the corresponding interval driving signal to the quantum dot light-emitting diode.
3. The driving method according to claim 1, wherein the device parameter includes a valence band energy level difference of a hole transport layer and a quantum dot light emitting layer of the quantum dot light emitting diode.
4. The driving method of claim 3, wherein said generating a corresponding interval drive signal according to the device parameter comprises:
when the valence band energy level difference is greater than or equal to a preset energy threshold, the interval driving signal comprises at least one reverse driving signal;
when the valence band energy level difference is less than a preset energy threshold, the interval driving signal comprises at least one idle driving signal.
5. The driving method of claim 3, wherein said generating a corresponding interval drive signal according to the device parameter comprises:
when the valence band energy level difference is greater than or equal to 0.5eV, then the gap drive signal comprises at least one reverse drive signal;
when the valence band energy level difference is less than 0.5eV, then the gap drive signal includes at least one dummy drive signal.
6. The driving method according to claim 1, wherein the device parameter includes a quantum dot light emitting layer parameter of the quantum dot light emitting diode; the quantum dot light-emitting layer parameters comprise at least one of quantum dot type, quantum dot shell material and quantum dot core material.
7. The driving method of claim 6, wherein said generating a corresponding interval drive signal according to the device parameter comprises:
when the quantum dot shell material of the quantum dot light-emitting diode is II-VI semiconductor material, the interval driving signal comprises at least one reverse driving signal.
8. The driving method according to claim 7, wherein the group II-VI semiconductor material includes at least one of ZnS, CdS.
9. The driving method of claim 6, wherein said generating a corresponding interval drive signal according to the device parameter comprises:
when the quantum dot type of the quantum dot light emitting diode is a blue quantum dot, the interval driving signal comprises at least one reverse driving signal.
10. The driving method of claim 1, wherein the generating a corresponding interval drive signal according to the device parameter further comprises:
acquiring a driving parameter of a forward driving signal in each driving period; the driving parameter comprises at least one of driving time, driving voltage and driving current;
and generating the corresponding interval driving signal according to the driving parameter and the device parameter.
11. The driving method according to claim 10, wherein the interval driving signal includes the inversion driving signal whose duty ratio or amplitude is in positive correlation with the driving voltage, the driving current, or the driving time.
12. The driving method of claim 10, wherein said generating the corresponding spaced drive signals according to the drive parameters and the device parameters comprises:
when the driving voltage is larger than a preset voltage threshold, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal; alternatively, the first and second electrodes may be,
when the driving current is larger than a preset current threshold value, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal; alternatively, the first and second electrodes may be,
and when the driving time is greater than a preset time threshold, increasing the amplitude of the reverse driving signal or increasing the duty ratio of the reverse driving signal.
13. The driving method according to claim 10, wherein the interval driving signal includes the idle driving signal, and a duty ratio of the idle driving signal is in a positive correlation with the driving voltage, the driving current, or the driving time.
14. The driving method of claim 10, wherein said generating the corresponding spaced drive signals according to the drive parameters and the device parameters comprises:
when the driving voltage is larger than a preset voltage threshold value, increasing the duty ratio of the idle driving signal; alternatively, the first and second electrodes may be,
when the driving current is larger than a preset current threshold value, increasing the duty ratio of the idle driving signal; alternatively, the first and second electrodes may be,
and when the driving time is greater than a preset time threshold value, increasing the duty ratio of the idle driving signal.
15. The driving method according to claim 1, further comprising:
and sending an interval driving signal to the quantum dot light-emitting diode after all driving periods in any continuous working time are finished.
16. The driving method according to claim 1, wherein the interval driving signal includes the inversion driving signal, and the inversion driving signal is an inversion voltage signal or an inversion current signal.
17. The driving method according to claim 1, wherein the interval driving signal includes the inversion driving signal which is an alternating signal of an inversion voltage signal and an inversion current signal.
18. The driving method according to claim 1, wherein the interval driving signal includes the inversion driving signal, and a waveform of the inversion driving signal is at least one of a square wave, a triangular wave, a ramp wave, and a sine wave.
19. The driving method of claim 1, wherein the interval driving signal comprises the reverse driving signal, and when a reverse voltage signal is included in the reverse driving signal, a maximum value of the reverse voltage signal is smaller than a breakdown voltage of the quantum dot light emitting diode.
20. The driving method according to claim 19, wherein the amplitude of the reverse voltage signal is-0.1V to-10V.
21. The driving method of claim 1, wherein the interval driving signal comprises the reverse driving signal, and when a reverse current signal is included in the reverse driving signal, a maximum value of the reverse current signal is smaller than a breakdown current of the quantum dot light emitting diode.
22. The driving method according to claim 21, wherein the amplitude of the reverse current signal is-0.0001 Am/cm2～-1Am/cm2。
23. The driving method of claim 2, wherein the interval driving signal comprises the inversion driving signal, and a sum of driving times of all inversion driving signals in each driving period accounts for 1% to 99% of a time percentage of each driving period.
24. The driving method of claim 2, wherein the interval driving signal comprises the inversion driving signal, and a sum of durations of all inversion driving signals in each driving period accounts for 10% to 60% of a time percentage of each driving period.
25. The driving method of claim 2, wherein the interval driving signal comprises the idle driving signal, and a duration of the idle driving signal in each driving period is 1-99% of a time percentage of each driving period.
26. The driving method of claim 1, wherein the spaced-apart drive signal comprises the inverted drive signal, the inverted drive signal having a frequency greater than 30 Hz.
27. The driving method of claim 1, wherein the interval driving signal comprises the inversion driving signal, and a frequency of the inversion driving signal is 60 to 500 Hz.
28. The driving method according to claim 1, wherein the forward driving signal is a voltage signal or a current signal of an arbitrary waveform.
29. A driving apparatus of a quantum dot light emitting diode, comprising:
the control module is used for generating corresponding interval driving signals according to device parameters of the quantum dot light-emitting diode;
and the driving module is used for sending the corresponding interval driving signal to the quantum dot light-emitting diode when the forward driving signal is finished.
30. The drive of claim 29, further comprising:
and the first acquisition module is used for acquiring the device parameters of the quantum dot light-emitting diode.
31. The drive of claim 29, further comprising:
the second acquisition module is used for acquiring the driving parameters of the forward driving signal; the driving parameter comprises at least one of driving time, driving voltage and driving current;
the control module is further configured to generate the corresponding interval driving signal according to the driving parameter and the device parameter.
32. A display device, comprising:
a display panel comprising a plurality of quantum dot light emitting diodes;
a driving circuit for driving the display panel to light up according to the driving method of any one of claims 1 to 28;
the quantum dot light-emitting diode comprises a bottom electrode, a light-emitting layer and a top electrode which are arranged in a laminated mode, and the driving circuit is connected with the bottom electrode and the top electrode respectively.
33. The display apparatus of claim 32, wherein the qd-led is a bottom or top emitting device.
34. The display device of claim 32, wherein the display panel comprises a red quantum dot light emitting diode, a blue quantum dot light emitting diode, and a green quantum light emitting diode;
the driving circuit drives the blue quantum dot light emitting diode to light according to the driving method of any one of claims 1 to 28.
35. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the method of driving according to any one of claims 1 to 28.
CN201910703109.4A 2019-07-31 2019-07-31 Drive method and drive device of quantum dot light-emitting diode and display device Pending CN112331130A (en)

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Application publication date: 20210205