CN112327578B - Photoetching system of direct-writing photoetching machine - Google Patents
Photoetching system of direct-writing photoetching machine Download PDFInfo
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- CN112327578B CN112327578B CN201910714857.2A CN201910714857A CN112327578B CN 112327578 B CN112327578 B CN 112327578B CN 201910714857 A CN201910714857 A CN 201910714857A CN 112327578 B CN112327578 B CN 112327578B
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- exposure
- imaging
- exposure system
- light source
- substrate
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- 238000001259 photo etching Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000003384 imaging method Methods 0.000 claims description 102
- 238000001459 lithography Methods 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photoetching system, which comprises an exposure system and a motion platform system, wherein the exposure system is used for projecting a substrate to be exposed, the motion platform system is used for driving the substrate to be exposed to move according to the exposure operation of the exposure system, and the light source of the exposure system is an infrared light source. The invention adopts the light source of the infrared band to replace or partially replace the light source of the ultraviolet band, greatly improves the energy of the light source, shortens the exposure time and improves the exposure efficiency.
Description
Technical Field
The invention relates to a lithography system of a direct-writing lithography machine, in particular to a lithography system of a direct-writing lithography machine applying a high-energy light source.
Background
The photolithography technique is widely applied to the field of semiconductor and PCB production, and is one of the process steps for manufacturing semiconductor devices, chips, PCBs and other products, and is used for printing characteristic patterns on the surface of a substrate, so as to finally obtain a pattern structure required by circuit design. The traditional photoetching technology needs to make a master mask or a film negative film of a mask for exposure operation, has long making period, corresponds to a single pattern, and cannot be widely applied. In order to solve the problems of the traditional photoetching technology, the direct writing photoetching mechanism is generated by utilizing the digital light processing technology, editing different required pattern structures through a programmable digital reflector device, and can rapidly switch patterns, thereby not only reducing the cost, but also reducing the time of a manufacturing process, and being widely applied to the technical field of photoetching.
The principle of photoetching is that a mask image is transferred onto photoresist coated on the surface of a substrate by an exposure method, and then a required pattern structure is finally obtained by processes such as development, etching and the like. Photoresists are one of the key materials in the photolithography process, and commonly used photoresists comprise printing ink, solder resist printing ink and the like, and can be divided into dry films, wet films and the like, and after being irradiated by light emitted by a light source, the photoresists form soluble or insoluble matters corresponding to certain solvents, and the photoresists are removed or reserved through etching to form a required pattern structure. The light source adopted at present is usually in an ultraviolet band, but the energy of the light source in the ultraviolet band at present is low and is difficult to improve, so that the exposure efficiency is influenced.
Disclosure of Invention
The invention aims to provide an exposure system with high light source energy.
In order to solve the problems, the invention provides a photoetching system which comprises an exposure system and a motion platform system, wherein the exposure system is used for projecting a substrate to be exposed, the motion platform system is used for driving the substrate to be exposed to move according to the exposure operation of the exposure system, and the light source of the exposure system is an infrared light source.
Further, the exposure system comprises a first exposure system and a second exposure system, and the light source wavelengths of the first exposure system and the second exposure system are different.
Further, in the first exposure system and the second exposure system, a wavelength range of one exposure system is an ultraviolet band, and a wavelength range of the other exposure system is an infrared band.
Further, the exposure system comprises a plurality of projection imaging systems, and imaging areas formed by adjacent projection imaging systems on an imaging surface are spliced or overlapped with each other in the direction perpendicular to the scanning direction, so that the whole area perpendicular to the scanning direction is covered.
Further, the projection imaging system includes a spectroscopic system.
Further, the beam splitting system at least comprises two groups of optical elements, each group of optical elements corresponds to one optical path, and an imaging area is formed on the imaging surface respectively.
Further, each group of optical elements comprises a first reflecting surface and a second reflecting surface which are parallel and opposite, and the first reflecting surface and the second reflecting surface have a certain included angle with the imaging surface.
Further, in the adjacent projection imaging systems, the reflecting surfaces in the adjacent beam splitting systems are connected or overlapped in a direction perpendicular to the scanning direction.
Further, the ultraviolet band is in the range of 350nm to 430nm.
Further, the light source is any one single wavelength of 355nm, 365nm, 375nm, 385nm, 395nm, 405nm and 415nm or a mixed wavelength of at least two different wavelengths of the above wavelengths.
Further, the wavelength of the infrared light source is not less than 800nm.
Compared with the prior art, the invention adopts the light source of the infrared band to replace or partially replace the light source of the ultraviolet band, greatly improves the energy of the light source, shortens the exposure time and improves the exposure efficiency.
Drawings
FIG. 1 is a schematic diagram of a first embodiment of a lithographic system.
Fig. 2 is a schematic diagram of a projection imaging system of the first embodiment.
FIG. 3 is a schematic diagram of a second embodiment of a lithographic system.
Fig. 4 is a schematic diagram of a projection imaging system according to a third embodiment.
Fig. 5 is a schematic diagram of a projection imaging system according to a second embodiment.
Fig. 6 is a schematic diagram of an imaging plane when the spectroscopic system splits into two beams.
Fig. 7 is a schematic diagram of the imaging surface when the spectroscopic system is split into two beams.
FIG. 8 is a schematic diagram of the architecture of an adjacent projection imaging system in a lithography system.
FIG. 9 is a schematic view of fields of view of adjacent projection imaging systems in a lithography system.
Fig. 10 is a schematic diagram of a projection imaging system according to a fourth embodiment.
Fig. 11 is a schematic diagram of a projection imaging system according to a fourth embodiment.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the present invention is described below by means of specific embodiments shown in the accompanying drawings.
As shown in fig. 1-2, a first embodiment of the present invention relates to a lithography system, where the lithography system includes an exposure system 1 and a motion stage system 2, where the exposure system 1 is used to project a substrate to be exposed, and the motion stage system 2 is used to drive the substrate to be exposed to move according to an exposure operation of the exposure system.
The exposure system 1 comprises a plurality of projection imaging systems, wherein the projection imaging systems are sequentially provided with a light source system 10, a reflection system 11, a digital micro-mirror array (DMD) 12 and a double telecentric imaging system 13, light rays emitted by the light source system 10 are reflected to the digital micro-mirror array 12 through the reflection system 11, required light rays are reflected to the double telecentric imaging system 13 by the digital micro-mirror array 12, and emergent light rays of the double telecentric imaging system 13 irradiate an imaging surface of a substrate.
The light source system 10 includes a light source, a dodging system and a collimation amplifying system. The light source emits light rays, and the light rays are subjected to optical treatment by the light homogenizing system and the collimation amplifying system to obtain required light spots. The light source is an infrared light source, and compared with an ultraviolet light source, the infrared light source has the characteristic of high energy, and the high-energy infrared light source can shorten the exposure time, thereby being beneficial to improving the efficiency of a photoetching system. The wavelength of the infrared light source is not less than 800nm.
As shown in fig. 3, the lithography system according to the second embodiment of the present invention includes an exposure system 1 and a motion stage system 2, where the exposure system 1 is used for projecting a substrate to be exposed, and the motion stage system 2 is used for driving the substrate to be exposed to move according to an exposure operation of the exposure system. In comparison with the first embodiment, the exposure system 1 includes a first exposure system 30 and a second exposure system 31. The light sources of the first exposure system 30 and the second exposure system 31 have different wavelength ranges, wherein the wavelength range of one exposure system is ultraviolet band, and the wavelength range of the other exposure system is infrared band. The ultraviolet band is preferably in the range of 350nm to 430nm, more preferably a single light source or a mixture of at least two light sources having wavelengths of 355nm, 365nm, 375nm, 385nm, 395nm, 405nm or 415 nm.
In the photolithography process, the motion stage system carries a substrate and sequentially passes through the first exposure system 30 and the second exposure system 31 along the Y direction of the scanning direction, when the substrate is in the exposure area of the first exposure system 30, the first exposure system 30 exposes the substrate, and when the substrate is in the exposure area of the second exposure system 31, the second exposure system 31 exposes the substrate, and exposure of a strip is completed along the scanning direction. After the first strip is completed, the moving platform system 2 carries the substrate to step along the X direction along the scanning direction, and then the moving platform system 2 carries the substrate to sequentially pass through the second exposure system and 31 and the first exposure system 30, so as to complete the exposure of the second strip. And carrying the substrate to and fro through the work platform system 2 to complete the exposure of the whole plate.
In the second embodiment, the infrared band exposure system is added on the basis of the ultraviolet band exposure system, so that the energy of the light source is greatly improved, the exposure time is shortened, and the photoetching efficiency is improved.
As shown in fig. 4-9, in a third embodiment of the present invention, the exposure system 1 includes a first exposure system 30 and a second exposure system 31, where each of the first exposure system 30 and the second exposure system 31 includes a plurality of projection imaging systems, the projection imaging systems include a light source system 10, a reflection system 11, a digital micromirror array (DMD) 12, a double telecentric imaging system 13, and a light splitting system 14, which are sequentially disposed, a light beam emitted from the light source system 10 is reflected to the digital micromirror array 12 by the reflection system 11, a required light beam is reflected to the double telecentric imaging system 13 by the digital micromirror array 12, and an outgoing light beam of the double telecentric imaging system 13 is split into two light paths by the light splitting system 14 and is respectively irradiated to an imaging surface 15 of a substrate.
The light sources of the first exposure system 30 and the second exposure system 31 have different wavelength ranges as in the second embodiment, wherein the wavelength range of one exposure system is ultraviolet band and the wavelength range of the other exposure system is infrared band. The light source of the ultraviolet band may be a single wavelength light source or a mixed wavelength light source.
When the beam splitting system 14 splits the outgoing light of the double telecentric imaging system into two beams, the beam splitting system includes two groups of optical elements 140, 141, the two groups of optical elements 140, 141 have opposite inclination directions with respect to the imaging plane 15, the two groups of optical elements 140, 141 have inclination angles in the X, Y direction, each group of optical elements 140, 141 corresponds to one optical path, and an imaging area is formed on the imaging plane 15 respectively. Since the two sets of optical elements 140, 141 have tilt angles in the direction X, Y, the imaging areas formed by the two sets of elements 140, 141 are relatively displaced in both the X-direction and the Y-direction.
Each set of optical elements 140, 141 comprises two parallel opposing first and second reflective surfaces 142, 144, 143, 145, each of the first and second reflective surfaces 142, 144, 143, 145 having an angle with the imaging surface 15, and each of the first and second reflective surfaces having an angle of inclination in the direction X, Y. The first reflecting surfaces 142, 144 face the double telecentric imaging system, receive light and reflect to the second reflecting surfaces 143, 145, the second reflecting surfaces 143, 145 reflect the light to the imaging surface 15, and an imaging area is formed on the imaging surface 15. As shown in fig. 4, each set of optical elements 140, 141 includes two opposite parallel mirrors, the reflective surfaces of the two mirrors being parallel to each other, a first reflective surface and a second reflective surface, respectively. Alternatively, as shown in fig. 5, each optical element is a polygon prism, and the polygon prism includes two opposite parallel surfaces, where the two opposite parallel surfaces are reflective surfaces, and are respectively a first reflective surface and a second reflective surface.
The scanning direction is set as the Y direction, the direction perpendicular to the scanning direction on the plane of the moving platform is the X direction, and the direction perpendicular to the moving platform is the Z direction.
As shown in fig. 6 to 7, the two imaging areas are divided into a first imaging area and a second imaging area, and the first imaging area and the second imaging area are equal, and have a length L and a width W. The offset distance of the second imaging region relative to the first imaging region in the X direction is d1, d1 is not greater than the length of the imaging region, that is, the first imaging region and the second imaging region are spliced in the X direction, as shown in fig. 6, the offset distance d1 in the X direction is equal to the length L; or partially overlapping, as shown in fig. 7, the distance d1 of the X-direction offset is less than the length L. The second imaging region is offset from the first imaging region in the Y direction by a distance d2. Because the beam splitting system is positioned in one projection imaging system, the distance d2 is far smaller than the distance between two adjacent imaging areas in the Y direction in the double-row projection imaging system.
8-9, in two adjacent independent projection imaging systems, the edges of the reflecting surfaces in the adjacent beam splitting systems are positioned on the same Z-direction plane and Y-direction plane, namely the X coordinates are equal; or both have overlapping projections in the Z-direction and X-direction planes. The two adjacent independent projection imaging systems are in seamless butt joint, so that no gap exists between the two projection imaging systems when the projection imaging systems are used for exposure, and the fields of view 150 and 151 of the projection imaging systems are connected or overlapped, so that the gap of the fields of view between the two adjacent projection imaging systems is eliminated. When the projection imaging system of the maskless photoetching system exposes simultaneously, the imaging area covers all the areas in the X direction, the exposure operation of the substrate is completed only by moving the motion platform in the Y direction, and the motion deflection platform system only needs to move in one direction.
Multiple sets of optical elements may be provided in the spectroscopic system 14 as needed to split the outgoing light rays of the double telecentric imaging system into multiple light beams and form multiple imaging regions.
As shown in fig. 10-11, in a fourth embodiment of the present invention, compared to the three phases of the embodiment, the projection imaging system has a microlens array 16 and another double telecentric imaging system 17 added between the beam splitting system 14 and the double telecentric imaging system 13, where the double telecentric imaging system 13 is the first double telecentric imaging system 13, and the other double telecentric imaging system 17 is the second double telecentric imaging system 17. The imaging plane of the digital micro-mirror array 12 is used as the object plane of the first double telecentric imaging system 13, the imaging plane of the digital micro-mirror array 12 forms an imaging plane light spot through the first double telecentric imaging system 13, the imaging plane light spot is focused and imaged into a light spot array through the micro-lens array 16, the diameter of a single lens of the micro-lens array 16 is equal to the imaging size of a single pixel point of the digital micro-mirror array 12, the center of the single lens of the micro-lens array 16 is positioned at the center of the single pixel point of the digital micro-mirror array 12, the focusing light spot of the micro-lens array is used as the object plane of the second double telecentric imaging system, after passing through the second double telecentric imaging system 17, the light spot is divided into two parts through the beam splitting system 14, and two exposure areas are formed on the imaging plane 15, and the two exposure areas are spliced or overlapped in the X direction and have intervals in the Y direction.
The exposure system of the fourth embodiment has the microlens array 16 and the second double telecentric imaging system 17 added to the exposure system of the third embodiment, and the resolution is increased to the exposure system of the third embodiment. The beam splitting system 14 divides the light spot into two parts, forms two exposure areas on the imaging surface, and splices or overlaps in the X direction, increases the X-axis exposure length, and effectively improves the exposure efficiency.
In the same way, in two adjacent independent projection imaging systems, the edges of the reflecting surfaces in the adjacent light splitting systems are positioned on the same Z-direction plane and Y-direction plane, namely the X coordinates are equal; or both have overlapping projections in the Z-direction and X-direction planes. The two adjacent independent projection imaging systems are in seamless butt joint, so that no gap exists between the two projection imaging systems when the projection imaging systems are used for exposure, and the fields of view 150 and 151 of the projection imaging systems are connected or overlapped, so that the gap of the fields of view between the two adjacent projection imaging systems is eliminated. When the projection imaging system of the maskless photoetching system exposes simultaneously, the imaging area covers all the areas in the X direction, and the exposure operation of the substrate is completed only by moving the motion platform in the Y direction. The motion stage system only needs unidirectional motion to expose.
The projection imaging systems in the third and fourth embodiments can also be applied to the first embodiment. The number of the exposure systems in the second embodiment, the third embodiment and the fourth embodiment is not limited to two, and may be plural, and at least one exposure system of each exposure system may use an infrared light source, and other exposure systems other than the exposure system of the infrared light source may use different wavelength light sources, or mixed wavelength light sources.
The invention adopts the light source of the infrared band to replace or partially replace the light source of the ultraviolet band, greatly improves the energy of the light source, shortens the exposure time and improves the exposure efficiency.
Claims (9)
1. The utility model provides a lithography system, includes exposure system, motion platform system, exposure system is used for carrying out the projection to the base plate of treating the exposure, motion platform system is used for driving the base plate of treating the exposure and removes according to the exposure operation of exposure system, its characterized in that: the exposure system comprises a first exposure system and a second exposure system which are arranged separately, wherein the wavelength range of a light source of one exposure system is an ultraviolet band, the wavelength range of a light source of the other exposure system is an infrared band, and the motion platform system sequentially passes through the first exposure system and the second exposure system along the scanning direction;
in the photoetching process, the motion platform system carries a substrate to sequentially pass through the first exposure system and the second exposure system along the Y direction of the scanning direction, when the substrate is positioned in the exposure area of the first exposure system, the first exposure system exposes the substrate, and when the substrate is positioned in the exposure area of the second exposure system, the second exposure system exposes the substrate, and the exposure of one strip is completed along the scanning direction; after the first strip is completed, the moving platform system bearing substrate steps along the X direction along the scanning direction vertically, and then the moving platform system bearing substrate sequentially passes through the second exposure system and the first exposure system to complete the exposure of the second strip; and carrying the substrate to and fro through the motion platform system to complete the exposure of the whole plate.
2. The lithography system of claim 1, wherein: the exposure system comprises a plurality of projection imaging systems, and imaging areas formed on an imaging surface by adjacent projection imaging systems are spliced or overlapped with each other in the direction perpendicular to the scanning direction, so that the whole area perpendicular to the scanning direction is covered.
3. The lithography system of claim 2, wherein: the projection imaging system includes a spectroscopic system.
4. A lithography system as claimed in claim 3, wherein: the light splitting system at least comprises two groups of optical elements, each group of optical elements corresponds to one light path, and an imaging area is formed on the imaging surface respectively.
5. The lithography system of claim 4, wherein: each group of optical elements comprises a first reflecting surface and a second reflecting surface which are parallel and opposite, and the first reflecting surface and the second reflecting surface have a certain included angle with the imaging surface.
6. The lithography system of claim 5, wherein: in the adjacent projection imaging systems, the reflecting surfaces in the adjacent beam splitting systems are connected or overlapped in the direction perpendicular to the scanning direction.
7. A lithography system as claimed in any one of claims 1, 3-6, wherein: the ultraviolet band ranges from 350nm to 430nm.
8. The lithography system of claim 7, wherein: the light source is any single wavelength of 355nm, 365nm, 375nm, 385nm, 395nm, 405nm and 415nm or a mixed wavelength of at least two different wavelengths.
9. The lithography system of claim 1, wherein: the wavelength of the infrared light source is not less than 800nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910714857.2A CN112327578B (en) | 2019-08-05 | 2019-08-05 | Photoetching system of direct-writing photoetching machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910714857.2A CN112327578B (en) | 2019-08-05 | 2019-08-05 | Photoetching system of direct-writing photoetching machine |
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| CN112327578A CN112327578A (en) | 2021-02-05 |
| CN112327578B true CN112327578B (en) | 2023-11-21 |
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| CN112327578A (en) | 2021-02-05 |
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