CN112320754B - Online testing structure and method for line width of semiconductor conductive film - Google Patents
Online testing structure and method for line width of semiconductor conductive film Download PDFInfo
- Publication number
- CN112320754B CN112320754B CN202011168378.4A CN202011168378A CN112320754B CN 112320754 B CN112320754 B CN 112320754B CN 202011168378 A CN202011168378 A CN 202011168378A CN 112320754 B CN112320754 B CN 112320754B
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- conductive film
- tested
- film
- semiconductor conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
- B81C99/004—Testing during manufacturing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an online test structure and method for line width of a semiconductor conductive film, wherein a round semiconductor film integrally connected with one end side of the semiconductor conductive film to be tested is prepared, four contact electrodes are arranged on the periphery of the round semiconductor film, and the opening angle of the contact electrodes is measured and calculated by adopting an improved four-point probe method, so that the semiconductor square resistance of the semiconductor film is further obtained. And then, applying voltage to the semiconductor conductive film to be tested, calculating the resistance value by measuring the current between the two electrodes, and finally obtaining the width value of the line width of the semiconductor conductive film according to the relation between the resistance and the geometric dimension of the semiconductor conductive film to be tested. The test structure of the invention is completed by adopting a basic micro-electromechanical processing technology, and the processing process is synchronous with the micro-electromechanical device, thereby meeting the requirement of on-line test. The test process adopts a simple direct current source as an excitation source, and can complete all excitation and test processes by adopting common voltage test equipment.
Description
Technical Field
The invention relates to an on-line test structure and method for line width of a semiconductor conductive film.
Background
The thin film linewidth of a microelectromechanical thin film device is an important parameter affecting the device performance. The size of the device can be obtained by measuring the line width of the film on line, and the accuracy of the device can be controlled.
Semiconductors are important materials used in surface micromachining processes, the basic process of which is: a layer of material, known as a sacrificial layer, is first deposited on a silicon wafer. Then, the pattern layer is defined by photoetching, and then, a structural layer film is manufactured on the sacrificial layer by a chemical vapor deposition method and the like. Finally, the sacrificial layer is removed by etching, so that the movable part of the miniature component is separated from the sacrificial layer, and the semiconductor film structure is formed. The material of the sacrificial layer is typically a dielectric material and the structural layer is a semiconductor material. Manufacturers of microelectromechanical products wish to monitor the line width of semiconductor conductive films on-line and reflect process errors in the manufacturing process in real time. Therefore, online testing of microelectromechanical products without leaving the processing environment and with convenient equipment is a necessary means of controlling the process.
Disclosure of Invention
The invention aims to: aiming at the prior art, an on-line test structure and method for the line width of the semiconductor conductive film are provided.
The technical scheme is as follows: on-line testing method for line width of semiconductor conductive film on surface of flat dielectric layer in Cartesian coordinate systemThe effective length of the semiconductor conductive film to be tested is L 1 The width is W; the method comprises the following steps:
step 1: preparing a circular semiconductor film at one end side of a semiconductor conductive film to be tested, wherein the circular semiconductor film and the semiconductor conductive film to be tested are connected into an integrated structure;
step 2: two anchor areas are respectively manufactured on the insulating substrates at two sides of the semiconductor conductive film to be tested along the x-axis direction at intervals;
step 3: preparing metal electrodes connected with the semiconductor conductive film to be tested in the anchor areas respectively;
step 4: preparing first to fourth contact electrodes at the periphery of the circular semiconductor film at intervals along the circumference in sequence, wherein the opening angle of the connection between the first to fourth contact electrodes and the circular semiconductor film is alpha;
step 5: the semiconductor square resistance R of the circular semiconductor film is measured by using the first to fourth contact electrodes and adopting a modified four-point probe method sq ；
Step 6: applying constant current to two metal electrodes on the same side of the semiconductor conductive film to be tested along the x-axis direction, measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is the resistor R A ；
Step 7: the width of the semiconductor conductive film to be measured is calculated according to the following formula:
further, the step 5 includes the following specific steps:
step 501: constant current is added between the first contact electrode and the fourth contact electrode, the voltage between the first contact electrode and the fourth contact electrode is measured, and the ratio of the voltage to the current is the resistor R a ；
Step 502: applying constant current between the first contact electrode and the fourth contact electrode, and measuring the second contact electrode and the fourth contact electrodeThe ratio of the voltage to the current between the electrodes is the resistance R b ；
Step 503: the semiconductor square resistance R is calculated according to the following formula sq ：
Wherein i is an imaginary unit, P, Q, S, T is an intermediate amount, and specifically:
wherein K [. Cndot.]A complete elliptic integral function of the first class; r is measured a And R is b Substituting the following equation to solve α:
R a /R b ＝g a (α)/g b (α)
wherein:
an on-line test structure of semiconductor conductive film line width comprises a semiconductor conductive film to be tested, four metal electrodes, a round semiconductor film and first to fourth contact electrodes; the semiconductor conductive film to be tested is positioned on the surface of the flat dielectric layer; the four metal electrodes are arranged on anchor areas on two sides of the semiconductor conductive film to be tested along the length direction at intervals, and the metal electrodes are electrically connected with the semiconductor conductive film to be tested; the round semiconductor film is arranged at one end side of the semiconductor conductive film to be tested and is connected with the semiconductor conductive film to be tested into an integrated structure; the first to fourth contact electrodes are uniformly arranged on the peripheral side of the circular semiconductor film, and the opening angle of the connection with the circular semiconductor film is alpha.
Further, the anchor region is disposed on an insulating substrate.
Further, the opening angle alpha is 30-45 degrees.
The beneficial effects are that: the test structure of the invention is completed by adopting a basic micro-electromechanical processing technology, and the processing process is synchronous with the micro-electromechanical device, so that the special processing requirement is avoided, and the requirements of online test are completely met. The test process adopts a simple direct current source as an excitation source, and can complete all excitation and test processes by adopting common voltage test equipment. The test equipment has low requirement, and the test process and the test parameter value are stable.
Drawings
Fig. 1 is a schematic diagram of an on-line measurement structure of a line width of a semiconductor conductive film according to the present invention.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, an on-line measuring structure of a semiconductor conductive film line width includes a semiconductor conductive film 101 to be measured, four metal electrodes 103, a circular semiconductor film 201, and first to fourth contact electrodes 201 to 205. The semiconductor conductive film 101 to be tested is located on the surface of the flat dielectric layer, four metal electrodes 103 are arranged on anchor areas 102 on two sides of the semiconductor conductive film 101 to be tested along the length direction at intervals, the anchor areas 102 are arranged on the insulating substrate, and the metal electrodes 103 are electrically connected with the semiconductor conductive film 101 to be tested. The circular semiconductor thin film 201 is provided at one end side of the semiconductor conductive thin film 101 to be tested, and is connected to the semiconductor conductive thin film 101 to be tested in an integrated structure. The first to fourth contact electrodes 201 to 205 are uniformly arranged on the peripheral side of the circular semiconductor film 201, and the opening angle of the connection with the circular semiconductor film 201 is alpha, and the size of alpha is 30 DEG or more and 45 deg or less.
In a Cartesian coordinate system, a semiconductor conductive film 101 to be tested on the surface of a flat dielectric layer is parallel to the x-axis direction, and the effective length is L 1 The width is W; the method comprises the following steps:
step 1: a circular semiconductor film 201 is prepared on one end side of the semiconductor conductive film 101 to be tested, and the circular semiconductor film 201 and the semiconductor conductive film 101 to be tested are connected into an integral structure.
Step 2: two anchor regions 102 are respectively formed on the insulating substrate on both sides of the semiconductor conductive film 101 to be tested in the x-axis direction at intervals.
Step 3: metal electrodes 103 connected to the semiconductor conductive film 101 to be tested are respectively prepared in the anchor regions 102.
Step 4: the first to fourth contact electrodes 201 to 205 are prepared at intervals in sequence along the circumference on the circumferential side of the circular semiconductor thin film 201, and the opening angle of the connection of the first to fourth contact electrodes 201 to 205 to the circular semiconductor thin film 201 is α.
Step 5: the semiconductor sheet resistance R of the circular semiconductor film 201 is measured by a four-point probe method by using the first to fourth contact electrodes 201 to 205 sq The method comprises the following specific steps:
step 501: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the first contact electrode 201 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance R a ；
Step 502: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the second contact electrode 202 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance R b ；
Step 503: by definition of the square resistance, the resistance R can be obtained a And R is b Is represented by the expression:
R sq is a semiconductor square resistor g a (alpha) and g b (α) is a function related only to the contact electrode opening angle α, g can be obtained by mapping the circular semiconductor thin film structure to a simple structure a (alpha) and g b The expression of (α) is as follows:
wherein i is an imaginary unit, P, Q, S, T is an intermediate amount, and specifically:
wherein, K is the first elliptic integral function;
r is measured a And R is b Substituting the formula (2), and solving alpha according to the following formula:
R a /R b ＝g a (α)/g b (α) (3)
then substituting the obtained alpha into the following formula to calculate and obtain the semiconductor square resistance R sq ：
Step 6: applying constant current to two metal electrodes 103 on the same side of the semiconductor conductive film 101 to be tested along the x-axis direction, measuring the voltage between the two metal electrodes 103 on the other side, wherein the ratio of the voltage to the current is the resistor R A 。
Step 7: the width of the semiconductor conductive film 101 to be measured is calculated from the relationship between the resistance and the geometric dimensions of the semiconductor conductive film to be measured according to the following formula:
the process of fabricating the test structure is described below in terms of a typical two-layer semiconductor micro-electromechanical surface processing process.
And selecting an N-type semiconductor silicon wafer, thermally growing a silicon dioxide layer with the thickness of 100 nanometers, and depositing a silicon nitride layer with the thickness of 500 nanometers by a low-pressure chemical vapor deposition process to form an insulating substrate. A 300 nm layer of semiconductor is deposited by a low pressure chemical vapor deposition process and heavily doped N-type to make the layer of semiconductor a conductor, which is etched by a photolithography process to form a portion of the anchor region 102. A dielectric layer with a thickness of 2000 nm is deposited by using a low pressure chemical vapor deposition process, and the anchor region 102 is patterned by a photolithography process. A1500 nm thick layer of semiconductor is deposited by low pressure chemical vapor deposition process, N-type heavy doping is carried out on the semiconductor, the semiconductor test structure pattern 101 and the anchor region 102 are formed by photoetching process, and the thickness of the anchor region is the sum of the thicknesses of the two semiconductors. And forming a pattern of the metal electrode 103 on the anchor region 102 by adopting a stripping process, and finally releasing the structure through the corrosion dielectric layer.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (4)
1. Semiconductor deviceThe on-line test method of the line width of the conductive film is characterized in that in a Cartesian coordinate system, a semiconductor conductive film (101) to be tested on the surface of a flat dielectric layer is parallel to the x-axis direction, and the effective length is L 1 The width is W; the method comprises the following steps:
step 1: preparing a circular semiconductor film (201) at one end side of a semiconductor conductive film (101) to be tested, wherein the circular semiconductor film (201) and the semiconductor conductive film (101) to be tested are connected into an integrated structure;
step 2: two anchor areas (102) are respectively manufactured on the insulating substrates at two sides of the semiconductor conductive film (101) to be tested along the x-axis direction at intervals;
step 3: preparing metal electrodes (103) connected with the semiconductor conductive film (101) to be tested in the anchor areas (102) respectively;
step 4: first to fourth contact electrodes (202 to 205) are sequentially prepared at intervals along the circumference on the circumferential side of the circular semiconductor film (201), and the opening angle of the connection of the first to fourth contact electrodes (202 to 205) and the circular semiconductor film (201) is alpha;
step 5: the semiconductor sheet resistance R of the circular semiconductor film (201) is measured by the improved four-point probe method by using the first to fourth contact electrodes (202 to 205) sq ；
Step 6: applying constant current to two metal electrodes (103) on the same side of the semiconductor conductive film (101) to be tested along the x-axis direction, measuring the voltage between the two metal electrodes (103) on the other side, wherein the ratio of the voltage to the current is the resistor R A ；
Step 7: the width of the semiconductor conductive film (101) to be measured is calculated according to the following formula:
the step 5 comprises the following specific steps:
step 501: measuring a first contact by applying a constant current between the first contact electrode (202) and the fourth contact electrode (205)The voltage between the electrode (202) and the fourth contact electrode (205) is the ratio of the voltage to the current is the resistance R a ；
Step 502: applying a constant current between the first contact electrode (202) and the fourth contact electrode (205), measuring the voltage between the second contact electrode (203) and the fourth contact electrode (205), the ratio of the voltage to the current being the resistance R b ；
Step 503: the semiconductor square resistance R is calculated according to the following formula sq ：
Wherein i is an imaginary unit, P, Q, S, T is an intermediate amount, and specifically:
wherein K [. Cndot.]A complete elliptic integral function of the first class; r is measured a And R is b Substituting the following equation to solve α:
R a /R b ＝g a (α)/g b (α)
wherein:
2. an on-line test structure of the line width of a semiconductor conductive film is characterized by comprising a semiconductor conductive film (101) to be tested, four metal electrodes (103), a round semiconductor film (201) and first to fourth contact electrodes (202-205); the semiconductor conductive film (101) to be tested is positioned on the surface of the flat dielectric layer; the four metal electrodes (103) are arranged on anchor areas (102) on two sides of the semiconductor conductive film (101) to be tested along the length direction at intervals, and the metal electrodes (103) are electrically connected with the semiconductor conductive film (101) to be tested; the round semiconductor film (201) is arranged at one end side of the semiconductor conductive film (101) to be tested and is connected with the semiconductor conductive film (101) to be tested into an integrated structure; the first to fourth contact electrodes (202 to 205) are uniformly arranged on the peripheral side of the circular semiconductor film (201), and the opening angle of the connection with the circular semiconductor film (201) is alpha.
3. The on-line test structure of a semiconductor conductive film line width according to claim 2, wherein the anchor region (102) is disposed on an insulating substrate.
4. The on-line test structure of a line width of a semiconductor conductive film according to claim 2, wherein the opening angle α is 30 ° to 45 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011168378.4A CN112320754B (en) | 2020-10-28 | 2020-10-28 | Online testing structure and method for line width of semiconductor conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011168378.4A CN112320754B (en) | 2020-10-28 | 2020-10-28 | Online testing structure and method for line width of semiconductor conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112320754A CN112320754A (en) | 2021-02-05 |
| CN112320754B true CN112320754B (en) | 2023-09-29 |
Family
ID=74297120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011168378.4A Active CN112320754B (en) | 2020-10-28 | 2020-10-28 | Online testing structure and method for line width of semiconductor conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112320754B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113093482B (en) * | 2021-03-29 | 2022-07-22 | 长鑫存储技术有限公司 | Alignment error testing method, alignment error adjusting method, alignment error testing system and storage medium |
| US11935797B2 (en) | 2021-03-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Test method, adjustment method, test system, and storage medium for alignment error |
| CN113267118B (en) * | 2021-06-23 | 2022-05-17 | 东南大学 | Semiconductor conductive film thickness online test structure and test method thereof |
| CN116466221B (en) * | 2023-05-06 | 2024-03-19 | 苏州法特迪科技股份有限公司 | Switching probe testing device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW379398B (en) * | 1997-06-28 | 2000-01-11 | Hyundai Electronics Ind | Measuring-pattern and measuring method for width of wire in semiconductor device |
| US6297517B1 (en) * | 2000-02-28 | 2001-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
| KR101267469B1 (en) * | 2012-12-26 | 2013-05-31 | (주)센서시스템기술 | Pressure sensor |
| CN104390580A (en) * | 2014-12-04 | 2015-03-04 | 上海集成电路研发中心有限公司 | Metal film film-thickness measuring system and method of measuring film-thickness by adopting system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2946775A1 (en) * | 2009-06-15 | 2010-12-17 | St Microelectronics Rousset | DEVICE FOR DETECTING SUBSTRATE SLIP DETECTION OF INTEGRATED CIRCUIT CHIP |
-
2020
- 2020-10-28 CN CN202011168378.4A patent/CN112320754B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW379398B (en) * | 1997-06-28 | 2000-01-11 | Hyundai Electronics Ind | Measuring-pattern and measuring method for width of wire in semiconductor device |
| US6297517B1 (en) * | 2000-02-28 | 2001-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
| KR101267469B1 (en) * | 2012-12-26 | 2013-05-31 | (주)센서시스템기술 | Pressure sensor |
| CN104390580A (en) * | 2014-12-04 | 2015-03-04 | 上海集成电路研发中心有限公司 | Metal film film-thickness measuring system and method of measuring film-thickness by adopting system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112320754A (en) | 2021-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112320754B (en) | Online testing structure and method for line width of semiconductor conductive film | |
| CN103378082B (en) | Graphene pressure transducer | |
| WO2017028466A1 (en) | Mems strain gauge chip and manufacturing process therefor | |
| TWI384567B (en) | Resistance-based etch depth determination for sgt technology | |
| KR100959005B1 (en) | A pressure measuring sensor and manufacturing process | |
| TWI783443B (en) | System and method for measuring electrical properties of materials | |
| US11699622B2 (en) | Methods and apparatus for test pattern forming and film property measurement | |
| KR100432465B1 (en) | Thin film piezoresistive sensor and method of making the same | |
| WO2022268039A1 (en) | Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof | |
| CN113093482A (en) | Alignment error testing method, alignment error adjusting method, alignment error testing system and storage medium | |
| JPS6410109B2 (en) | ||
| KR20100019261A (en) | Sensor using zno nanorod array and method for the same | |
| KR20230144930A (en) | Standard Wafers, Method of Making the Same and Calibration Method | |
| CN107342254B (en) | The calibration method of crystal edge etching machine bench | |
| Apanius et al. | Silicon shadow mask fabrication for patterned metal deposition with microscale dimensions using a novel corner compensation scheme | |
| US10707405B2 (en) | Electromechanical actuator | |
| CN113776592B (en) | Gas and pressure composite sensor and preparation method thereof | |
| Kummamuru et al. | A close proximity self-aligned shadow mask for sputter deposition onto a membrane or cavity | |
| CN114300374A (en) | Method for measuring etching selection ratio of silicon carbide dielectric layer | |
| US6445194B1 (en) | Structure and method for electrical method of determining film conformality | |
| TWI676025B (en) | System and method for measuring a thermal expansion coefficient | |
| US9983231B2 (en) | Deep-etched multipoint probe | |
| Cao et al. | Single-material MEMS using polycrystalline diamond | |
| Zhang et al. | Release Process Development for MEMS Micro-Bridge Structure | |
| JPS62256438A (en) | Etching end-point control pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |