CN112319865A - Protective device and method for satellite structure potential control - Google Patents
Protective device and method for satellite structure potential control Download PDFInfo
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- CN112319865A CN112319865A CN202011326619.3A CN202011326619A CN112319865A CN 112319865 A CN112319865 A CN 112319865A CN 202011326619 A CN202011326619 A CN 202011326619A CN 112319865 A CN112319865 A CN 112319865A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/52—Protection, safety or emergency devices; Survival aids
Abstract
A protective device and a method for satellite structure potential control are provided, the protective device for satellite structure potential control comprises a metal layer and a dielectric material layer attached to the metal layer, a plurality of hollow areas are formed on the dielectric material layer through etching, the exposed metal layer is exposed from the hollow areas, and a three-electrode structure is formed at the joint of the exposed metal layer, the dielectric material layer and a vacuum environment in space; obtaining the protection device. The high-voltage solar battery array has the advantages of simple structure, light weight, zero power consumption and the like, and provides a low-cost and high-efficiency way for fundamentally solving the problem of electrostatic discharge of the high-voltage solar battery array of the satellite.
Description
Technical Field
The invention relates to a protection device and a method for satellite structure potential control, which are suitable for satellite structure potential control in a space live environment and belong to the field of satellite charge-discharge effect protection.
Background
The space environment contains a large amount of plasmas and high-energy radiation electrons, and charged particles can interact with a satellite, so that the charge and discharge effect is generated. Since the satellite is suspended in space and the charge rate of electrons in the space plasma is much greater than that of ions, the structure of the satellite will be charged to thousands of negative potentials (relative to the space plasma potential). Meanwhile, under the action of illumination, because the charging potential amplitude of the surface insulating material of the photoelectron emission satellite is low, the satellite structure and the surface insulating material form a reversal potential gradient.
The domestic and foreign research shows that: the reversed potential gradient is the main cause of electrostatic breakdown of the high-voltage solar cell array, and secondary discharge induced by the reversed potential gradient seriously affects the on-orbit safety of the satellite. At present, only the potential active control device is adopted in the method for reducing the potential amplitude of the satellite structure, and the main principle is that plasma is generated by ionizing gas, electrons in the plasma are accelerated and emitted to the outer space, and the rest ions are used for neutralizing the potential of the satellite structure. However, the active potential control device not only needs to consume satellite energy and carry working media, such as the total weight of the active potential control device (PCU) carried on the international space station exceeds 20 kg, and the power consumption exceeds 100W, but also needs to work in cooperation with the potential monitoring device, and the system is very complex, and cannot be popularized and applied in an effective space. Therefore, it is required to develop a satellite structure potential control method with low power consumption, light weight and simple system.
Disclosure of Invention
The technical problem solved by the invention is as follows: the protection device and the method for satellite structure potential control are suitable for satellite structure potential protection and control in a space electrified environment.
A protective device for satellite structure potential control comprises a metal layer and a dielectric material layer attached to the metal layer, wherein a plurality of hollow areas are formed on the dielectric material layer through etching, the exposed metal layer is exposed out of the hollow areas, and a three-electrode structure is formed at the joint of the exposed metal layer, the dielectric material layer and the vacuum environment in space; obtaining the protection device.
The protective device for satellite structure potential control is characterized in that the thicknesses of the metal layer and the dielectric material layer are both in micron order, so that high electric field intensity between two layers of materials of the metal layer and the dielectric material layer is ensured, and the subsequent processing of the three-electrode structure is facilitated.
In the protective device for controlling the satellite structure potential, the dielectric material layer should be made of a material with a larger secondary electron emission coefficient so as to ensure that the charging potential on the surface of the dielectric material layer is larger than the satellite structure potential.
The protection device for satellite structure potential control, specific one structure is: using kapton with the thickness of 3um as a dielectric material layer and using a Cu material with the thickness of 1um as a metal layer to obtain a Cu + kapton composite layer material; processing a rectangular or square array structure on the kapton material by an etching means, wherein the rectangular etching depth is 3um, the width of an etching groove, namely the width of a bare metal layer, is about 10um, and the length of a single side is about 500 um; at this time, the exposed Cu layer, the kapton layer at the periphery and the vacuum in the space form a three-electrode structure.
A control method of satellite structure potential is characterized in that any protective device for satellite structure potential control is placed on the surface of a satellite, a metal layer is connected with a satellite structure by methods such as conductive adhesive, and the potential on the metal layer is the satellite structure potential; the dielectric material layer is back to the electron irradiation direction of the satellite, when charged particles charge the surface of the dielectric material layer in a space, the dielectric material has a high secondary electron emission coefficient, so the charging potential of the dielectric layer is greater than the potential of the metal layer, an electric field pointing from the dielectric layer to the metal layer is formed at the position of the three-electrode structure at the moment, the potential difference between the dielectric layer and the metal layer induces the metal material in the three-electrode area to emit field-induced electrons, the field-emitted electrons and the dielectric layer material act to generate secondary emitted electrons, the secondary electron emission coefficient of the dielectric layer material is large, so the surface potential of the dielectric layer is continuously increased, the electric field strength is further enhanced, more field-induced electrons are emitted, and finally the accumulated negative charges of the satellite structure are discharged in the form of the.
The satelliteThe control method of the structure potential, the thickness of the metal layer and the dielectric material layer are both micron-scale, and the potential difference between the dielectric material layer and the metal layer can generate 106Electric field strength of V/m or more.
The satellite structure potential control method specifically comprises the following steps: using kapton with the thickness of 3um as a dielectric layer and a Cu material with the thickness of 1um as a metal layer to obtain a Cu + kapton composite layer material; processing a rectangular or square array structure on the kapton material by an etching means, wherein the rectangular etching depth is 3um, the width of an etching groove, namely the width of a bare metal layer, is about 10um, and the length of a single side is about 500 um; at this time, the exposed Cu layer, the kapton layer at the periphery and the vacuum in the space form a three-electrode structure.
The invention has the following advantages:
the invention provides a three-electrode composite layer protective material and a method for satellite structure potential control, which have the advantages of simple structure, light weight and the like, do not need to consume any satellite energy, have better structure potential control effect, and provide a low-cost and high-efficiency way for fundamentally solving the problem of electrostatic discharge of a satellite high-voltage solar cell array.
Drawings
FIG. 1 is a schematic structural diagram of a "three-electrode" composite layer material;
FIG. 2 is a schematic view of a three-electrode structure in a composite layer material;
FIG. 3 is a schematic diagram of potential control of a satellite structure made of a three-electrode composite layer material;
FIG. 4 is a schematic diagram of a satellite structure potential control process simulation test device;
1-bare metal layer, 2-dielectric material layer, 3-metal layer, 4-satellite structure, 5- 'three-electrode' structure, 6-strong electric field, 7-field emission electron, 8-secondary emission electron, 9-sample stage, 10-insulating gasket, 11-cable, 12-capacitor, 13-direct current voltage source, 14-vacuum system, 15-three-dimensional driving mechanism and 16-non-contact surface potential measuring instrument. 17-electron gun
Detailed Description
The present invention will be described in detail with reference to specific examples.
As shown in fig. 1, a guard for satellite structure potential control: the three-electrode solar cell comprises a metal layer 3 and a dielectric material layer 2 attached to the metal layer 3, wherein a plurality of hollow areas are formed on the dielectric material layer 2 through etching, the exposed metal layer 1 is exposed from the hollow areas, and a three-electrode structure (shown in figure 2) is formed at the joint of the exposed metal layer 1, the dielectric material layer 2 and the vacuum environment in the space.
The thicknesses of the metal layer 3 and the dielectric material layer 2 are both in the micron order, so that the metal layer 1 and the dielectric material layer 2 are ensured to have higher electric field intensity, and the subsequent processing of the three-electrode structure is facilitated.
The dielectric material layer should be made of a material with a large secondary electron emission coefficient so as to ensure that the surface charging potential of the dielectric material layer is larger than the satellite structure potential.
The invention also provides a control method of the satellite structure potential, which comprises the following steps: the protective device capable of being used for controlling the satellite structure potential is arranged on the surface of a satellite, the metal layer is connected with the satellite structure by methods such as conductive adhesive, and the like, and the potential on the metal layer is the satellite structure potential; when the dielectric material layer faces away from the satellite and faces the electron irradiation direction, and the charged particles in the space charge the surface of the dielectric material layer, the charge potential of the dielectric layer is greater than the potential of the metal layer (satellite structure potential) because the selected dielectric material has a high secondary electron emission coefficient (greater than 2.5), and at this time, an electric field pointing from the dielectric layer to the metal layer is formed at the position of the three-electrode structure, as shown in fig. 3.
Since the thickness of the metal layer 3 and the dielectric material layer 2 is in the order of microns, the potential difference between the dielectric layer and the metal layer can be generated 106The field emission electrons are generated by the action of the field emission electrons and the dielectric layer material, the surface potential of the dielectric layer is continuously increased due to the large secondary electron emission coefficient of the dielectric layer material, the electric field intensity is further enhanced, more field emission electrons are emitted, and finally the accumulated negative charges of the satellite structure are discharged in the form of field emission electrons, so that the control of the potential of the satellite structure is realized.
And (3) using kapton with the thickness of 3um as a dielectric layer and using a Cu material with the thickness of 1um as a metal layer to obtain the Cu + kapton composite layer material. A rectangular or square array structure is processed on the kapton material through an etching method, the rectangular etching depth is 3um, the width of an etching groove, namely the width of a bare metal layer, is about 10um, and the length of a single side is about 500 um. At this time, the exposed Cu layer, the kapton layer at the periphery and the vacuum in the space form a three-electrode structure.
The process of controlling the satellite structure potential by using the 'three-electrode' composite layer material is simulated by adopting an electron irradiation method, the schematic diagram of the device is shown in figure 4, and the control process is as follows:
the three-electrode composite layer material is placed on a sample table 9, a dielectric material layer 2 faces the electron irradiation direction, a metal layer 3 is isolated from the sample table 9 by using an insulating gasket 10, the metal layer 3 is connected with a capacitor 12 and a direct current voltage source 13 by using a cable 11, wherein the capacitor 12(300pF) is used for simulating a satellite capacitor, and the direct current voltage source 13 simulates the structure potential of a satellite, which is equivalent to placing the three-electrode composite layer material on the surface of the satellite and connecting the metal layer 2 with the satellite structure.
And (3) pumping the sample table 9 into a vacuum state by using a vacuum system 14, adjusting the direct-current voltage source 13 to 5000V, moving the three-dimensional driving mechanism 15 to move the non-contact surface potential measuring instrument 16 above the material of the three-electrode composite layer, and testing to obtain the satellite structure potential at the moment, wherein the test result is about-4900V.
Removing the surface potential measuring instrument 16, starting the electron gun 17 to simulate the space electron environment, adjusting the irradiation electron energy to 5.2KeV and the beam density to 2nA/cm2And starting to irradiate the composite layer material, closing the electron gun 17 after irradiating for 5 minutes, moving the surface potential measuring instrument 16 to the position above the three-electrode composite layer material again, testing the satellite structure potential to be-3850V, and comparing with the test result before irradiation, finding that the satellite structure potential amplitude is reduced by about 1000V, thereby showing that the three-electrode composite layer material has better satellite structure potential control effect.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (10)
1. A protection device for satellite structure potential control, its characterized in that: the three-electrode structure comprises a metal layer and a dielectric material layer attached to the metal layer, wherein a plurality of hollow areas are formed on the dielectric material layer through etching, the exposed metal layer is exposed out of the hollow areas, and a three-electrode structure is formed at the joint of the exposed metal layer, the dielectric material layer and a vacuum environment in space; obtaining the protection device.
2. A guard for satellite structure potential control according to claim 1, characterized in that: the thicknesses of the metal layer and the dielectric material layer are both in micron order, so that the metal layer and the dielectric material layer are ensured to have higher electric field intensity, and the subsequent processing of the three-electrode structure is facilitated.
3. A guard for satellite structure potential control according to claim 1, characterized in that: the dielectric material layer should be made of a material with a large secondary electron emission coefficient so as to ensure that the surface charging potential of the dielectric material layer is larger than the satellite structure potential.
4. A guard for satellite structure potential control according to claim 1, characterized in that: kapton with the thickness of 3um is used as a dielectric material layer.
5. A guard for satellite structure potential control according to claim 4, characterized in that: the Cu material with the thickness of 1um is used as the metal material layer.
6. A guard for satellite structure potential control according to claim 5, characterized in that: processing a rectangular or square array structure on the kapton material by an etching means, wherein the rectangular etching depth is 3um, the width of an etching groove, namely the width of a bare metal layer, is about 10um, and the length of a single side is about 500 um; at this time, the exposed Cu layer, the kapton layer at the periphery and the vacuum in the space form a three-electrode structure.
7. A control method of satellite structure potential is characterized in that: placing the protective device for controlling the potential of the satellite structure according to any one of claims 1 to 6 on the surface of a satellite, and connecting the metal layer with the satellite structure by using a conductive adhesive or the like, wherein the potential on the metal layer is the potential of the satellite structure; the dielectric material layer is back to the electron irradiation direction of the satellite, when charged particles charge the surface of the dielectric material layer in a space, the dielectric material has a high secondary electron emission coefficient, so the charging potential of the dielectric layer is greater than the potential of the metal layer, an electric field pointing from the dielectric layer to the metal layer is formed at the position of the three-electrode structure at the moment, the potential difference between the dielectric layer and the metal layer induces the metal material in the three-electrode area to emit field-induced electrons, the field-emitted electrons and the dielectric layer material act to generate secondary emitted electrons, the secondary electron emission coefficient of the dielectric layer material is large, so the surface potential of the dielectric layer is continuously increased, the electric field strength is further enhanced, more field-induced electrons are emitted, and finally the accumulated negative charges of the satellite structure are discharged in the form of the.
8. The method for controlling the structure potential of a satellite according to claim 7, characterized in that: the thicknesses of the metal layer and the dielectric material layer are both in the micrometer order, and the potential difference between the dielectric material layer and the metal layer can generate 106Electric field strength of V/m or more.
9. The method for controlling the structural potential of the satellite according to claim 7, wherein the kapton with the thickness of 3um is used as the dielectric material layer.
10. The method of claim 9, wherein the metal material layer is made of Cu material with a thickness of 1 um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011326619.3A CN112319865A (en) | 2020-11-24 | 2020-11-24 | Protective device and method for satellite structure potential control |
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| CN202011326619.3A CN112319865A (en) | 2020-11-24 | 2020-11-24 | Protective device and method for satellite structure potential control |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115679261A (en) * | 2022-09-28 | 2023-02-03 | 兰州空间技术物理研究所 | Electron emission film for controlling spacecraft potential and preparation method and application thereof |
| US11839012B2 (en) | 2019-12-12 | 2023-12-05 | Hiroki Shibuya | Static eliminator |
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| EP2034804A1 (en) * | 2006-06-06 | 2009-03-11 | Kyushu Institute of Technology | Discharge prevention device |
| CN102781150A (en) * | 2012-07-23 | 2012-11-14 | 北京卫星环境工程研究所 | Component for autonomously controlling structural potential of spacecraft |
| WO2015113160A1 (en) * | 2014-01-30 | 2015-08-06 | Magellan Aerospace, Winnipeg A Division Of Magellan Aerospace Limited | Composite shielding structure for space applications |
| CN105329465A (en) * | 2015-09-30 | 2016-02-17 | 哈尔滨工业大学 | Method for relieving spacecraft communication blackout |
| CN209467355U (en) * | 2018-12-11 | 2019-10-08 | 吉林省大千电子科技有限公司 | Satellite communication power supply signal comprehensive electromagnetic protective shell |
| CN111776253A (en) * | 2020-07-20 | 2020-10-16 | 北京卫星环境工程研究所 | Spacecraft propulsion membrane structure utilizing space plasma and preparation method thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2034804A1 (en) * | 2006-06-06 | 2009-03-11 | Kyushu Institute of Technology | Discharge prevention device |
| CN102781150A (en) * | 2012-07-23 | 2012-11-14 | 北京卫星环境工程研究所 | Component for autonomously controlling structural potential of spacecraft |
| WO2015113160A1 (en) * | 2014-01-30 | 2015-08-06 | Magellan Aerospace, Winnipeg A Division Of Magellan Aerospace Limited | Composite shielding structure for space applications |
| CN105329465A (en) * | 2015-09-30 | 2016-02-17 | 哈尔滨工业大学 | Method for relieving spacecraft communication blackout |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11839012B2 (en) | 2019-12-12 | 2023-12-05 | Hiroki Shibuya | Static eliminator |
| CN115679261A (en) * | 2022-09-28 | 2023-02-03 | 兰州空间技术物理研究所 | Electron emission film for controlling spacecraft potential and preparation method and application thereof |
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Application publication date: 20210205 |