CN112310268A - Preparation method of novel medium-temperature thermoelectric material - Google Patents

Preparation method of novel medium-temperature thermoelectric material Download PDF

Info

Publication number
CN112310268A
CN112310268A CN202011192316.7A CN202011192316A CN112310268A CN 112310268 A CN112310268 A CN 112310268A CN 202011192316 A CN202011192316 A CN 202011192316A CN 112310268 A CN112310268 A CN 112310268A
Authority
CN
China
Prior art keywords
thermoelectric material
temperature
preparing
temperature thermoelectric
novel intermediate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011192316.7A
Other languages
Chinese (zh)
Inventor
孔繁宇
侯旭峰
任保国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 18 Research Institute
Original Assignee
CETC 18 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 18 Research Institute filed Critical CETC 18 Research Institute
Priority to CN202011192316.7A priority Critical patent/CN112310268A/en
Publication of CN112310268A publication Critical patent/CN112310268A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • C22C1/1036Alloys containing non-metals starting from a melt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment

Abstract

The invention provides a preparation method of a novel medium-temperature thermoelectric material, which comprises the following steps: s1: crushing the raw materials into small blocks with the diameter not more than 30mm, and placing the small blocks on filter paper; s2: weighing the small blocks according to a certain stoichiometric ratio, adding the small blocks into a crucible, and then starting to smelt to obtain an ingot; s3: grinding the cast ingot, and sieving the powder obtained after grinding by using a sieve; s4: putting the sieved powder into a mold for hot-pressing sintering to obtain a sintered material; s5: and putting the sintered material into an annealing furnace for annealing treatment to obtain the novel intermediate-temperature thermoelectric material. The invention has the beneficial effects of effectively solving the problems that the TAGS system material is seriously volatilized in the working temperature range, the electric heating performance and the mechanical performance of the TAGS system material are influenced, and the long-term working stability is influenced, and laying a good foundation for preparing the thermoelectric generator with high thermoelectric conversion efficiency for deep space exploration in the future.

Description

Preparation method of novel medium-temperature thermoelectric material
Technical Field
The invention belongs to the technical field of thermoelectric materials, and particularly relates to a preparation method of a novel medium-temperature thermoelectric material.
Background
Thermoelectric materials (thermoelectric materials) are functional materials that utilize the interaction between carriers and lattice vibrations in the materials to achieve direct interconversion of thermal energy and electrical energy. The thermoelectric generator made of the thermoelectric material has the characteristics of compact structure, high reliability, strong capability of resisting severe environment, no need of maintenance, no influence of environment and the like, and is widely applied to the fields of aerospace, military, oceans, medicine and the like. The improvement of the thermoelectric conversion efficiency of the thermoelectric generator can reduce the dosage of a radioisotope heat source and reduce the cost, and numerous researchers have been making continuous efforts and researches in this respect for many years. The main way to improve the thermoelectric conversion efficiency of the thermoelectric generator is to improve the thermoelectric performance of the thermoelectric material.
(GeTe)x(AgSbTe2)100-xThe solid solution is also called as a TAGS system material, and is a middle-temperature p-type thermoelectric material with higher efficiency. The thermoelectric figure of merit of the material reaches 1.4-1.7, but the material can reliably work only at the temperature of not more than 500 ℃, even if the temperature of not more than 500 ℃, the material is seriously volatilized in the working temperature range, the sublimation rate is about 50 times of that of a PbTe material, the electrothermal property and the mechanical property of the material are influenced, and the stability of long-term work is influenced.
Disclosure of Invention
The invention aims to provide a preparation method of a novel intermediate-temperature thermoelectric material, effectively solves the problems that the TAGS system material is seriously volatilized in a working temperature range, the electric heating performance and the mechanical performance of the TAGS system material are influenced, and the long-term working stability is influenced, and lays a good foundation for preparing a thermoelectric generator with high thermoelectric conversion efficiency for deep space exploration in the future.
In order to solve the technical problems, the invention adopts the technical scheme that: a preparation method of a novel medium-temperature thermoelectric material comprises the following steps: s1: crushing the raw materials into small blocks with the diameter not more than 30mm, and placing the small blocks on filter paper; s2: weighing the small blocks according to a certain stoichiometric ratio, adding the small blocks into a crucible, and then starting to smelt to obtain an ingot; s3: grinding the cast ingot, and sieving the powder obtained after grinding by using a sieve; s4: putting the sieved powder into a mold for hot-pressing sintering to obtain a sintered material; s5: and putting the sintered material into an annealing furnace for annealing treatment to obtain the novel intermediate-temperature thermoelectric material.
Preferably, the raw material is a combination of simple substances of Ge, Te, Ag and Sb.
Preferably, in the step S2, the stoichiometric ratio is (GeTe)x(AgSbTe2)100-x(x=60~90)。
Preferably, in the step S2, the melting temperature is 700-900 ℃, and the melting time is 0.5-2 h.
Preferably, in step S3, the grinding manner is ball milling, and the ingot is put into a ball mill, and ball milling is performed after a protective atmosphere is introduced.
Preferably, the protective atmosphere is one or more of helium, argon, nitrogen and hydrogen-argon mixed gas.
Preferably, the ball milling time is 2-24 h.
Preferably, in the step S3, the mesh size is 170-300 mesh.
Preferably, in the step S4, the hot pressing temperature of the powder in the hot pressing sintering is 300-600 ℃, the hot pressing pressure is 40-80MPa, and the heat preservation time is 0.5-2 h.
Preferably, in the step S5, the annealing temperature of the sintered material during annealing treatment is 300-1000 ℃, and the heat preservation time is 4-48 h.
The raw materials are mixed according to a certain stoichiometric proportion, ground, sieved and hot-pressed, sintered and molded, so that the problems that the TAGS system material is seriously volatilized within the working temperature range, the electric heating performance and the mechanical performance of the TAGS system material are influenced, and the stability of long-term working is influenced can be effectively solved, the mechanical performance and the electric heating performance of the TAGS system material are optimized, the volatility is reduced, and a good foundation is laid for preparing a thermoelectric generator with high thermoelectric conversion efficiency for deep space exploration in the future.
Drawings
FIG. 1 is a schematic view of the compressive strength of the TAGS material in the preparation method of the novel intermediate temperature thermoelectric material of the embodiment of the present invention
FIG. 2 is a schematic diagram of the change curve of thermoelectric figure of merit of the TAGS material with temperature according to the preparation method of the novel intermediate temperature thermoelectric material of the embodiment of the present invention
Detailed Description
The invention is further illustrated below with reference to examples and figures:
example 1
S1: crushing raw materials: respectively placing vacuum-packed tellurium ingots, antimony ingots and germanium ingots on filter paper, and smashing the materials into small pieces through packing by a wood hammer. Opening the packaging bag, clamping small pieces with diameter not more than 30mm with tweezers, and placing on clean filter paper. The raw materials are crushed and selected to be raw material blocks with the size of 30mm, so that the raw materials can be better smelted when smelting is carried out in the step S2, and the phenomenon that large raw materials are agglomerated and cannot be completely smelted is avoided.
S2: alloy smelting: according to (GeTe)85(AgSbTe2)15The raw materials obtained in the step S1 and the silver powder are weighed according to the stoichiometric ratio, the raw materials are added into a graphite crucible and then melted, the melting temperature is 900 ℃, and the melting time is 2 hours. The stoichiometric ratio can enable the thermoelectric material to have better electrothermal performance and mechanical performance.
S3: ball milling and sieving: and (5) putting the alloy smelted in the step S2 into a ball milling tank, introducing nitrogen, carrying out ball milling for 8 hours, and sieving the alloy powder obtained after ball milling by using a 200-mesh sieve. The alloy powder after ball milling is finer and more uniform than the powder after common crushing, the alloy powder is not wasted, and the production cost is reduced.
S4: hot-pressing and sintering: and (3) loading the alloy powder sieved in the step (3) into a graphite die, carrying out vacuum hot-pressing sintering at 500 ℃ and 50MPa, and keeping the temperature and the pressure for 1 hour. The product obtained by hot-pressing sintering is obtained by carrying out solid solution alloying on the raw materials, enhancing the scattering of the material on phonons, and enabling the thermoelectric material to have better electric heating performance and mechanical performance and reduce the high-temperature volatility of the material.
S5: annealing treatment: and (4) putting the sintered material obtained in the step (S4) into an annealing furnace for annealing treatment, wherein the annealing temperature is 400 ℃, and the heat preservation time is 24 hours.
Example 2
S1: crushing raw materials: respectively placing vacuum-packed tellurium ingots, antimony ingots and germanium ingots on filter paper, and smashing the materials into small pieces through packing by a wood hammer. Opening the packaging bag, clamping small pieces with diameter not more than 30mm with tweezers, and placing on clean filter paper.
S2: alloy smelting: according to (GeTe)60(AgSbTe2)40The raw materials obtained in the step S1 and the silver powder are weighed according to the stoichiometric ratio, the raw materials are added into a graphite crucible and then melted, the melting temperature is 700 ℃, and the melting time is 2 hours.
S3: ball milling and sieving: and (5) putting the alloy smelted in the step S2 into a ball milling tank, introducing argon gas, carrying out ball milling for 24 hours, and sieving the alloy powder obtained after ball milling by using a 300-mesh sieve.
S4: hot-pressing and sintering: and (3) loading the alloy powder sieved in the step (3) into a graphite die, carrying out vacuum hot-pressing sintering at 600 ℃ and 80MPa, and keeping the temperature and the pressure for 2 hours.
S5: annealing treatment: and (5) putting the sintered material obtained in the step (S4) into an annealing furnace for annealing treatment, wherein the annealing temperature is 1000 ℃, and the heat preservation time is 48 hours.
Example 3
S1: crushing raw materials: respectively placing vacuum-packed tellurium ingots, antimony ingots and germanium ingots on filter paper, and smashing the materials into small pieces through packing by a wood hammer. Opening the packaging bag, clamping small pieces with diameter not more than 30mm with tweezers, and placing on clean filter paper.
S2: alloy smelting: according to (GeTe)90(AgSbTe2)10The raw material obtained in the step S1 and silver powder were weighed according to the stoichiometric ratio, and the raw material was added to a graphite crucible and then melted at a temperature of 700 ℃ for 1.5 hours.
S3: ball milling and sieving: and (5) putting the alloy smelted in the step S2 into a ball milling tank, introducing nitrogen, carrying out ball milling for 8 hours, and sieving the alloy powder obtained after ball milling by using a 250-mesh sieve.
S4: hot-pressing and sintering: and (3) loading the alloy powder sieved in the step (3) into a graphite die, carrying out vacuum hot-pressing sintering at 300 ℃ and 40MPa, and keeping the temperature and the pressure for 1 hour.
S5: annealing treatment: and (4) putting the sintered material obtained in the step (S4) into an annealing furnace for annealing treatment, wherein the annealing temperature is 300 ℃, and the heat preservation time is 4 hours.
Example 4
S1: crushing raw materials: respectively placing vacuum-packed tellurium ingots, antimony ingots and germanium ingots on filter paper, and smashing the materials into small pieces through packing by a wood hammer. Opening the packaging bag, clamping small pieces with diameter not more than 30mm with tweezers, and placing on clean filter paper.
S2: alloy smelting: according to (GeTe)70(AgSbTe2)30The raw materials obtained in the step S1 and the silver powder are weighed according to the stoichiometric ratio, the raw materials are added into a graphite crucible and then melted, the melting temperature is 900 ℃, and the melting time is 0.5 hour.
S3: ball milling and sieving: and (5) putting the alloy smelted in the step (S2) into a ball milling tank, introducing nitrogen, carrying out ball milling for 8 hours, and sieving the alloy powder obtained after ball milling by using a 170-mesh sieve.
S4: hot-pressing and sintering: and (3) loading the alloy powder sieved in the step (3) into a graphite die, carrying out vacuum hot-pressing sintering at 400 ℃ and 60MPa, and keeping the temperature and the pressure for 1.5 hours.
S5: annealing treatment: and (5) putting the sintered material obtained in the step (S4) into an annealing furnace for annealing treatment, wherein the annealing temperature is 900 ℃, and the heat preservation time is 20 hours.
As shown in a schematic diagram of the compressive strength of the TAGS material in the preparation method of the novel medium-temperature thermoelectric material in FIG. 1, the compressive strength of the TAGS material can reach 210MPa at most, the mechanical strength of the thermoelectric material is improved, and the use duration can be prolonged when the TAGS material is later applied to a deep space exploration spacecraft. The successful preparation of the material can improve the thermoelectric conversion efficiency of the isotope thermoelectric battery for deep space exploration, reduce the dosage of a radioactive isotope heat source and reduce the cost of a generator.
As shown in fig. 2, a schematic diagram of a curve showing the change of the thermoelectric figure of the TAGS material along with the temperature in the preparation method of the novel intermediate-temperature thermoelectric material, the thermoelectric figure of merit of the TAGS material can reach 1.8 at 500 ℃, so that the volatility of the thermoelectric material is reduced, the thermoelectric performance is greatly improved, the production cost can be greatly reduced, and the service life is prolonged.
Although the embodiments of the present invention have been described in detail, the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. A preparation method of a novel medium-temperature thermoelectric material comprises the following steps:
s1: crushing the raw materials into small blocks with the diameter not more than 30mm, and placing the small blocks on filter paper;
s2: weighing the small blocks according to a certain stoichiometric ratio, adding the small blocks into a crucible, and then starting to smelt to obtain an ingot;
s3: grinding the cast ingot, and sieving the powder obtained after grinding by using a sieve;
s4: putting the sieved powder into a mold for hot-pressing sintering to obtain a sintered material;
s5: and putting the sintered material into an annealing furnace for annealing treatment to obtain the novel intermediate-temperature thermoelectric material.
2. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: the raw materials are the combination of Ge, Te, Ag and Sb simple substances.
3. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S2, the stoichiometric ratio is (GeTe)x(AgSbTe2)100-x(x=60~90)。
4. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S2, the melting temperature is 700-900 ℃, and the melting time is 0.5-2 h.
5. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S3, the grinding method is ball milling, and the ingot is put into a ball mill and ball milled after introducing a protective atmosphere.
6. The method for preparing a novel intermediate temperature thermoelectric material according to claim 5, wherein: the protective atmosphere is one or a combination of helium, argon, nitrogen and hydrogen-argon mixed gas.
7. The method for preparing a novel intermediate temperature thermoelectric material according to claim 5, wherein: the ball milling time is 2-24 h.
8. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S3, the mesh size is 170-300 mesh.
9. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S4, the hot pressing temperature of the powder in the hot pressing sintering is 300-600 ℃, the hot pressing pressure is 40-80MPa, and the heat preservation time is 0.5-2 h.
10. The method for preparing a novel intermediate-temperature thermoelectric material according to claim 1, wherein the method comprises the following steps: in the step S5, the annealing temperature of the sintered material is 300-1000 ℃ and the heat preservation time is 4-48 h.
CN202011192316.7A 2020-10-30 2020-10-30 Preparation method of novel medium-temperature thermoelectric material Pending CN112310268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011192316.7A CN112310268A (en) 2020-10-30 2020-10-30 Preparation method of novel medium-temperature thermoelectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011192316.7A CN112310268A (en) 2020-10-30 2020-10-30 Preparation method of novel medium-temperature thermoelectric material

Publications (1)

Publication Number Publication Date
CN112310268A true CN112310268A (en) 2021-02-02

Family

ID=74332860

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011192316.7A Pending CN112310268A (en) 2020-10-30 2020-10-30 Preparation method of novel medium-temperature thermoelectric material

Country Status (1)

Country Link
CN (1) CN112310268A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102234842A (en) * 2011-06-24 2011-11-09 宁波工程学院 Ga2Te3-based thermoelectric semiconductor used at intermediate temperature and preparation method
US20120113672A1 (en) * 2008-12-30 2012-05-10 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
RU2518353C1 (en) * 2012-12-07 2014-06-10 Общество С Ограниченной Ответственностью "Адв-Инжиниринг" Method of obtaining thermoelectrical material for thermoelectrical generator devices
US20150093653A1 (en) * 2010-06-07 2015-04-02 Nexeon Ltd. Additive for lithium ion rechargeable battery cells
CN107010609A (en) * 2017-03-10 2017-08-04 宁波工程学院 A kind of p types Cu4Ga6Te11The middle temperature thermoelectric semiconductor of base and its synthesis technique
CN108155284A (en) * 2017-12-19 2018-06-12 东莞市联洲知识产权运营管理有限公司 A kind of preparation method of the electrode of high temperature heat-resistant electrical part
CN108447972A (en) * 2018-04-12 2018-08-24 同济大学 A kind of SnTe base high-performances thermoelectric material and preparation method thereof
CN108950347A (en) * 2018-07-02 2018-12-07 华中科技大学 A kind of preparation method of MgAgSb pyroelectric material

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120113672A1 (en) * 2008-12-30 2012-05-10 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US20150093653A1 (en) * 2010-06-07 2015-04-02 Nexeon Ltd. Additive for lithium ion rechargeable battery cells
CN102234842A (en) * 2011-06-24 2011-11-09 宁波工程学院 Ga2Te3-based thermoelectric semiconductor used at intermediate temperature and preparation method
RU2518353C1 (en) * 2012-12-07 2014-06-10 Общество С Ограниченной Ответственностью "Адв-Инжиниринг" Method of obtaining thermoelectrical material for thermoelectrical generator devices
CN107010609A (en) * 2017-03-10 2017-08-04 宁波工程学院 A kind of p types Cu4Ga6Te11The middle temperature thermoelectric semiconductor of base and its synthesis technique
CN108155284A (en) * 2017-12-19 2018-06-12 东莞市联洲知识产权运营管理有限公司 A kind of preparation method of the electrode of high temperature heat-resistant electrical part
CN108447972A (en) * 2018-04-12 2018-08-24 同济大学 A kind of SnTe base high-performances thermoelectric material and preparation method thereof
CN108950347A (en) * 2018-07-02 2018-12-07 华中科技大学 A kind of preparation method of MgAgSb pyroelectric material

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M.C.CHANG: "Compressive creep behavior of hot-pressed GeTe based TAGS-85 and effect of creep on thermoelectric properties", 《ACTA MATERIALIA》 *
杨胜辉: "GeTe-AgSbTe_2基热电材料的纳米结构与性能优化", 《中国优秀博硕士学位论文全文数据库(博士)》 *

Similar Documents

Publication Publication Date Title
CN102194989A (en) Method for preparing thermoelectric material of ternary diamond structure
CN101549405A (en) High-pressure sintering preparation method of high-densification high-performance nano crystal block thermoelectric material
CN108238796B (en) Copper seleno solid solution thermoelectric material and preparation method thereof
CN101694010B (en) Preparation method of layered nanostructured InSb pyroelectric material
JP7344531B2 (en) Thermoelectric conversion material and its manufacturing method
CN103934459A (en) Method for preparing high-performance Half-Heusler block thermoelectric materials at ultrahigh speed and low cost
CN111477736A (en) Bismuth telluride-based thermoelectric material and preparation method thereof
CN103700759A (en) Nanocomposite structure Mg2Si-based thermoelectric material and preparation method thereof
CN105895795A (en) Method for preparing composite tin selenide based thermoelectric material
CN101736173A (en) Method for preparing AgSbTe2 thermoelectric material by combining fusant rotatable swinging and spark plasma sintering
CN101217178B (en) A preparation method for antimonide molybdenum base thermoelectric material
CN108461619A (en) A kind of preparation method of Se doping skutterudite thermoelectric material
CN101338386B (en) Method for preparing TiNi Sn based thermoelectric compounds
KR101323319B1 (en) The manufacturing process of Bi-Te-Se thermoelectric materials doped with silver
CN112310268A (en) Preparation method of novel medium-temperature thermoelectric material
CN102383023A (en) Preparation method for ferro-silico-manganese alloy thermoelectric material
CN109776093B (en) Preparation method of nano composite thermoelectric material
CN101307392B (en) Process for preparing CoSb3-based thermoelectric material by combining liquid quenching and spark plasma sintering
CN101307394A (en) Process for preparing bismuth telluride -based thermoelectric material by liquid quenching cooperated with spark plasma sintering
CN111162160B (en) P-type cubic phase Ge-Se-based thermoelectric material and preparation method thereof
CN101307393B (en) Process for preparing silicon-germanium-based thermoelectric material by liquid quenching cooperated with spark plasma sintering
US4717789A (en) Thermoelectric elements
CN108198934B (en) Composite thermoelectric material and preparation method thereof
US3285019A (en) Two-phase thermoelectric body comprising a lead-tellurium matrix
CN106981564B (en) P-type Ag3In7Te12Base high temperature thermoelectric material and its preparation process

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20210202